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High-Mobility Thin-Film Transistors Based on InZnGeO Channel Layer

2024-10-31

    Peng C, Huang H, Ma Z, Chen F, Yan G, Li J, Li W, Li X, Chu J H, Zhang J
    High-Mobility Thin-Film Transistors Based on InZnGeO Channel Layer
    IEEE Transactions on Electron Devices, vol. 71, no. 11, pp. 6725-6730, Nov. 2024.

    | 标签: 传感器