-
2019
Journal ArticleZhong Y, Xie G, Mao F, Ding J, Yue F, Chen S, Lu X, Jing C, Chu J H
Thin-wall cyclic olefin copolymer tube waveguide for broadband terahertz transmission
Optical Materials, 2019, 98: 109490.Journal ArticleZhou B, Gong S-J, Jiang K, Xu L, Zhu L, Shang L, Li Y, Hu Z, Chu J H
Ferroelectric and dipole control of band alignment in the two dimensional InTe/In2Se3 heterostructure
Journal of Physics: Condensed Matter, 2019, 32: 055703.Journal ArticleZhou B, Gong S-J, Jiang K, Xu L, Shang L, Zhang J, Hu Z, Chu J H
A type-II GaSe/GeS heterobilayer with strain enhanced photovoltaic properties and external electric field effects
Journal of Materials Chemistry C, 2020, 8: 89-97.Journal ArticleYang J, Yin W, Zhou B, Cui A, Xu L, Zhang D, Li W, Hu Z, Chu J H
Composition dependence of optical properties and band structures in p-type Ni-doped CuO films: Spectroscopic experiment and first-principles calculation
The Journal of Physical Chemistry C, 2019, 123: 27165-27171.Journal ArticleXu L, Zhang P, Jiang H, Wang X, Chen F, Hu Z, Gong Y, Shang L, Zhang J, Jiang K, Chu J H
Large‐scale growth and field‐effect transistors electrical engineering of atomic‐layer SnS2
Small, 2019, 15: 1904116.Journal ArticleXue J, Hu X, Guo Y, Weng G, Jiang J, Chen S, Zhu Z, Chu J H, Akiyama H
Diagnosis of perovskite solar cells through absolute electroluminescence-efficiency measurements
Frontiers in Physics, 2019, 7: 166.Journal ArticleFu X, Li G, Zhang W, Zhong Y, Lu X, Yue F, Jing C, Chu J H
Transmission behaviors of metallic ATR mid-infrared hollow waveguide at low temperature and performance improvement
Optics Communications, 2020, 458: 124821.Journal ArticleWu C, Xu Y, Ao L, Jiang K, Shang L, Li Y, Hu Z, Chu J H
Robust three-dimensional porous rGO aerogel anchored with ultra-fine α-Fe2O3 nanoparticles exhibit dominated pseudocapacitance behavior for superior lithium storage
Journal of Alloys Compounds, 2020, 816: 152627.Journal ArticleChen Y, Yin C, Wang X, Jiang Y, Wang H, Wu B, Shen H, Lin T, Hu W, Meng X, Du P, Chu J H, Wang Z, Wang J
Multimode Signal Processor Unit Based on the Ambipolar WSe2–Cr Schottky Junction
ACS applied materials interfaces, 2019, 11: 38895-38901.Journal ArticleWang X, Cui A, Chen F, Xu L, Hu Z, Jiang K, Shang L, Chu J H
Probing effective out‐of‐plane piezoelectricity in van der waals layered materials induced by flexoelectricity
Small, 2019, 15: 1903106.Journal ArticleXu Y, Wu C, Ao L, Jiang K, Shang L, Li Y, Hu Z, Chu J H
Three-dimensional porous Co3O4–CoO@ GO composite combined with N-doped carbon for superior lithium storage
Nanotechnology, 2019, 30: 425404.Journal ArticleYang N, Ren Z-Q, Hu C-Z, Guan Z, Tian B-B, Zhong N, Xiang P-H, Duan C-G, Chu J H
Ultra-wide temperature electronic synapses based on self-rectifying ferroelectric memristors
Nanotechnology, 2019, 30: 464001.Journal ArticleZhang W, Li G, She C, Cheng J, Li H, Liu S, Jing C, Cheng Y, Chu J H
High performance tube sensor based on PANI/Eu3+ nanofiber for low-volume NH3 detection
Analytica chimica acta, 2020, 1093: 115-122.Journal ArticleWu S, Wu G, Wang X, Chen Y, Lin T, Shen H, Hu W, Meng X, Wang J, Chu J H
A gate-free MoS2 phototransistor assisted by ferroelectrics
Journal of Semiconductors, 2019, 40: 092002.Journal ArticleLu Q, Guo H, Zhang Y, Tang X, Lei W, Qi R, Chu J H, Li D, Zhao Q
Graphene oxide-Fe3O4 nanocomposite magnetic solid phase extraction followed by UHPLC-MS/MS for highly sensitive determination of eight psychoactive drugs in urine samples
Talanta, 2020, 206: 120212.Journal ArticleHu X, Tao J, Wang Y, Xue J, Weng G, Zhang C, Chen S, Zhu Z, Chu J H
5.91%-efficient Sb2Se3 solar cells with a radio-frequency magnetron-sputtered CdS buffer layer
Applied Materials Today, 2019, 16: 367-374.Journal ArticleLin L, Ma Y, Wu J, Pang F, Ge J, Sui S, Yao Y, Qi R, Cheng Y, Duan C-g, Chu J H, Huang R
Origin of photocatalytic activity in Ti4+/Ti3+ core–shell titanium oxide nanocrystals
The Journal of Physical Chemistry C, 2019, 123: 20949-20959.Journal ArticleJiang C, Zhang Y, Tian B, Luo C, Zhong N, Wang J, Meng X, Peng H, Duan C-G, Chu J H
Efficient two-terminal artificial synapse based on a network of functionalized conducting polymer nanowires
Journal of Materials Chemistry C, 2019, 7: 9933-9938.Journal ArticleCui A, Ye Y, Zheng L, Jiang K, Zhu L, Shang L, Li Y, Hu Z, Chu J H
Exploring lattice symmetry evolution with discontinuous phase transition by Raman scattering criteria: The single-crystalline (K, Na) NbO 3 model system
Physical Review B, 2019, 100: 024102.Journal ArticleWu C, Zhou W, Yin Y, Ma W, Jiang L, Huang Z, Chu J H
Long wavelength infrared detection based on Mn-Co-Ni-O thin films with dielectric-metal-dielectric absorptive structures
Infrared Physics Technology, 2019, 102: 102987.Journal ArticleWang X, Shen H, Chen Y, Wu G, Wang P, Xia H, Lin T, Zhou P, Hu W, Meng X, Chu J H, Wang J
Multimechanism synergistic photodetectors with ultrabroad spectrum response from 375 nm to 10 µm
Advanced science, 2019, 6: 1901050.Journal ArticleHuang F, Li M, Xu Y, Cui A, Li W, Xu Y, Chu J H, Noh Y-Y
Understanding thickness-dependent electrical characteristics in conjugated polymer transistors with top-gate staggered structure
IEEE Transactions on Electron Devices, 2019, 66: 2723-2728.Journal ArticleZhang S, Wang X, Chen Y, Wu G, Tang Y, Zhu L, Wang H, Jiang W, Sun L, Lin T, Shen H, Hu W, Ge J, Wang J, Meng X, Chu J H
Ultrasensitive hybrid MoS2–ZnCdSe quantum dot photodetectors with high gain
ACS applied materials interfaces, 2019, 11: 23667-23672.Journal ArticleWu J, Hu T, Yin Y, Li J, Zhou W, Gao Y, Jiang L, Huang Z, Chu J H
Current-controlled negative differential resistance in small-polaron hopping system
AIP Advances, 2019, 9Journal ArticleWang F, Cui A, Sun H, Zhou B, Xu L, Jiang K, Shang L, Hu Z, Chu J H
Electronic bandgap manipulation of monolayer WS2 by vertically coupled insulated Mg (OH) 2 layers
Journal of Alloys Compounds, 2019, 785: 156-162.Journal ArticleCui A, Zhu L, Jiang K, Xu L, Hu Z, Xu G, Sun H, Huang Z, Poddar R, Chu J H
Probing Nanoscale Electromechanical Behaviors of Relaxor Ferroelectrics in Highly Conductive Liquid Environments
Physical Review Applied, 2019, 11: 054037.Journal ArticleLi Y, Bian M, Zhang N, Bai W, Yang J, Zhang Y, Tang X, Chu J H
Mn-doping composition dependence of the structures, electrical and magnetic properties, and domain structure/switching of Aurivillius Bi5Ti3FeO15 films
Ceramics International, 2019, 45: 8634-8639.Journal ArticleTao J, Hu X, Xue J, Wang Y, Weng G, Chen S, Zhu Z, Chu J H
Investigation of electronic transport mechanisms in Sb2Se3 thin-film solar cells
Solar Energy Materials Solar Cells, 2019, 197: 1-6.Journal ArticleWeng G, Tian J, Chen S, Xue J, Yan J, Hu X, Chen S, Zhu Z, Chu J H
Giant reduction of the random lasing threshold in CH 3 NH 3 PbBr 3 perovskite thin films by using a patterned sapphire substrate
Nanoscale, 2019, 11: 10636-10645.Journal ArticleTao J, Hu X, Guo Y, Hong J, Li K, Jiang J, Chen S, Jing C, Yue F, Yang P, Zhang C, Wu Z, Tang J, Chu J H
Solution-processed SnO2 interfacial layer for highly efficient Sb2Se3 thin film solar cells
Nano Energy, 2019, 60: 802-809.Journal ArticleHuang J, Li Y, Gao Y, Li G, Huang Z, Chu J, Andreev Y
High efficient terahertz generation from cryogenic gallium phosphide based on collinear difference frequency
Fifth International Symposium on Laser Interaction with Matter, SPIE, 2019, 11046: 726-732.Journal ArticleCui A, De Wolf P, Ye Y, Hu Z, Dujardin A, Huang Z, Jiang K, Shang L, Ye M, Sun H, Chu J H
Probing electromechanical behaviors by datacube piezoresponse force microscopy in ambient and aqueous environments
Nanotechnology, 2019, 30: 235701.Journal ArticleLuo Z, Hu X, Tian X, Luo C, Xu H, Li Q, Li Q, Zhang J, Qiao F, Wu X, E. B V, Chu J H
Structure-property relationships in graphene-based strain and pressure sensors for potential artificial intelligence applications
Sensors, 2019, 19: 1250.Journal ArticleZhang Q, Deng H, Yu J, Tao J, Sun L, Yang P, Chu J H
Grain growth enhancing through preheating treatment of a sputtered stacked metallic precursor for Cu (In, Al) Se2 thin film solar cells application
Materials Science Engineering: B, 2019, 242: 31-36.Journal ArticleYang Y, Yang J, Yin W, Huang F, Cui A, Zhang D, Li W, Hu Z, Chu J H
Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors
Applied Surface Science, 2019, 481: 632-636.Journal ArticleGuan Z, Yang N, Ren Z-Q, Zhong N, Huang R, Chen W-X, Tian B-B, Tang X-D, Xiang P-H, Duan C-G, Chu J H
Mediation in the second-order synaptic emulator with conductive atomic force microscopy
Nanoscale, 2019, 11: 8744-8751.Journal ArticleGuo Y, Zhao F, Tao J, Jiang J, Zhang J, Yang J, Hu Z, Chu J H
Efficient and hole‐transporting‐layer‐free CsPbI2Br planar heterojunction perovskite solar cells through rubidium passivation
ChemSusChem, 2019, 12: 983-989.Journal ArticleHu X, Chen T, Hong J, Chen S, Weng G, Zhu Z, Chu J H
Diagnosis of GaAs solar-cell resistance via absolute electroluminescence imaging and distributed circuit modeling
Energy, 2019, 174: 85-90.Journal ArticleYu J, Deng H, Zhang Q, Tao J, Sun L, Yang P, Chu J H
The role of tuning Se/(S+ Se) ratio in the improvement of Cu2MnSn (S, Se) 4 thin films properties and photovoltaic device performance
Solar Energy, 2019, 179: 279-285.Journal ArticleJiang C, Fu H, Han Y, Li D, Lin H, Li B, Meng X, Peng H, Chu J H
Tuning the crystal structure and luminescence of pyrrolidinium manganese halides via halide ions
Crystal Research Technology, 2019, 54: 1800236.Journal ArticleTian B, Liu L, Yan M, Wang J, Zhao Q, Zhong N, Xiang P, Sun L, Peng H, Shen H, Lin T, Dkhil B, Meng X, Chu J H, Tang X, Duan C
A Robust Artificial Synapse Based on Organic Ferroelectric Polymer
Advanced Electronic Materials, 2019, 5: 1800600.ConferenceLyu, Liangjian; Ye, Dawei; Shi, C. -J. Richard
A 340nW/Channel Neural Recording Analog Front-End using Replica-Biasing LNAs to Tolerate 200mVpp Interfere from 350mV Power Supply
2019 IEEE International Symposium on Circuits and Systems (ISCAS), 2019, ISSN: 2158-1525.@conference{LLyuCShi19, title = {A 340nW/Channel Neural Recording Analog Front-End using Replica-Biasing LNAs to Tolerate 200mVpp Interfere from 350mV Power Supply}, author = {Liangjian Lyu and Dawei Ye and C. -J. Richard Shi}, doi = {10.1109/ISCAS.2019.8702781}, issn = {2158-1525}, year = {2019}, date = {2019-05-01}, urldate = {2019-05-01}, booktitle = {2019 IEEE International Symposium on Circuits and Systems (ISCAS)}, pages = {1-4}, keywords = {传感器, 芯片设计}, pubstate = {published}, tppubtype = {conference} }ConferenceYe, Dawei; Xu, Rongjin; Lyu, Liangjian; Shi, C. -J. Richard
A 2.46GHz, −88dBm Sensitivity CMOS Passive Mixer-First Nonlinear Receiver with 50dB Tolerance to In-Band Interferer
2019 IEEE International Symposium on Circuits and Systems (ISCAS), 2019, ISSN: 2158-1525.@conference{DYeCShi19, title = {A 2.46GHz, −88dBm Sensitivity CMOS Passive Mixer-First Nonlinear Receiver with 50dB Tolerance to In-Band Interferer}, author = {Dawei Ye and Rongjin Xu and Liangjian Lyu and C. -J. Richard Shi}, doi = {10.1109/ISCAS.2019.8702464}, issn = {2158-1525}, year = {2019}, date = {2019-05-01}, urldate = {2019-05-01}, booktitle = {2019 IEEE International Symposium on Circuits and Systems (ISCAS)}, pages = {1-4}, keywords = {芯片设计}, pubstate = {published}, tppubtype = {conference} }Journal ArticleWu, F.; Li, Q.; Wang, P.; Xia, H.; Wang, Z.; Wang, Y.; Luo, M.; Chen, L.; Chen, F. S.; Miao, J. S.; Chen, X. S.; Lu, W.; Shan, C. X.; Pan, A. L.; Wu, X.; Ren, W. C.; Jariwala, D.; Hu, W. D.
High Efficiency and Fast Van Der Waals Hetero-photodiodes with A Unilateral Depletion Region
In: Nature Communications, vol. 10, 2019, ISSN: 2041-1723.@article{RN134, title = {High Efficiency and Fast Van Der Waals Hetero-photodiodes with A Unilateral Depletion Region}, author = {F. Wu and Q. Li and P. Wang and H. Xia and Z. Wang and Y. Wang and M. Luo and L. Chen and F. S. Chen and J. S. Miao and X. S. Chen and W. Lu and C. X. Shan and A. L. Pan and X. Wu and W. C. Ren and D. Jariwala and W. D. Hu}, doi = {10.1038/s41467-019-12707-3}, issn = {2041-1723}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Nature Communications}, volume = {10}, keywords = {}, pubstate = {published}, tppubtype = {article} }Journal ArticleZheyu, Liu; Zichen, Fan; Qi, Wei; Xing, Wu; Fei, Qiao; Ping, Jin; Xin-jun, Liu; Chengliang, Liu; Huazhong, Yang
Design of Switched-Current Based Low-Power PIM Vision System for IoT Applications
In: 2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), pp. 181-6, 2019, (2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) 15-17 July 2019 Miami, FL, USA 0 978-1-7281-3391-1).@article{RN191, title = {Design of Switched-Current Based Low-Power PIM Vision System for IoT Applications}, author = {Liu Zheyu and Fan Zichen and Wei Qi and Wu Xing and Qiao Fei and Jin Ping and Liu Xin-jun and Liu Chengliang and Yang Huazhong}, url = {<Go to ISI>://INSPEC:18993946}, doi = {10.1109/isvlsi.2019.00041}, year = {2019}, date = {2019-01-01}, journal = {2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)}, pages = {181-6}, note = {2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) 15-17 July 2019 Miami, FL, USA 0 978-1-7281-3391-1}, keywords = {}, pubstate = {published}, tppubtype = {article} }ConferenceChanglu, Liu; Tianxiang, Lan; Qin, Li; Kaige, Jia; Yidian, Fan; Xing, Wu; Fei, Qiao; Wei, Qi; Xin-Jun, Liu; Huazhong, Yang
Energy-efficient Analog Processing Architecture for Direction of Arrival with Microphone Array
2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) , 2019.@conference{RN193, title = {Energy-efficient Analog Processing Architecture for Direction of Arrival with Microphone Array}, author = {Liu Changlu and Lan Tianxiang and Li Qin and Jia Kaige and Fan Yidian and Wu Xing and Qiao Fei and Qi Wei and Liu Xin-Jun and Yang Huazhong}, doi = {10.1109/isvlsi.2019.00097}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, booktitle = {2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) }, journal = {2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)}, pages = {507-12}, keywords = {芯片设计}, pubstate = {published}, tppubtype = {conference} }ConferenceLyu, Liangjian; Wang, Yu; Chen, Chixiao; Shi, C. -J. Richard
A Low-Voltage Low-Power Multi-Channel Neural Interface IC Using Level-Shifted Feedback Technology
Proceedings of the 24th Asia and South Pacific Design Automation Conference, 2019, ISBN: 9781450360074.@conference{LLyuCShi19a, title = {A Low-Voltage Low-Power Multi-Channel Neural Interface IC Using Level-Shifted Feedback Technology}, author = {Liangjian Lyu and Yu Wang and Chixiao Chen and C. -J. Richard Shi}, doi = {10.1145/3287624.3287757}, isbn = {9781450360074}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, booktitle = {Proceedings of the 24th Asia and South Pacific Design Automation Conference}, pages = {13–14}, keywords = {传感器, 芯片设计}, pubstate = {published}, tppubtype = {conference} }Journal ArticleZhu, Ying; Ning, Hongkai; Yu, Zhihao; Pan, Qiang; Zhang, Chunchen; Luo, Chen; Tu, Xuecou; You, Yumeng; Wang, Peng; Wu, Xing; Shi, Yi; Wang, Xinran
Thickness-Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1-xO2 Thin Films through Interfacial Bound Charges
In: Advanced Electronic Materials, vol. 5, no. 8, 2019, ISSN: 2199-160X.@article{RN180, title = {Thickness-Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1-xO2 Thin Films through Interfacial Bound Charges}, author = {Ying Zhu and Hongkai Ning and Zhihao Yu and Qiang Pan and Chunchen Zhang and Chen Luo and Xuecou Tu and Yumeng You and Peng Wang and Xing Wu and Yi Shi and Xinran Wang}, doi = {10.1002/aelm.201900554}, issn = {2199-160X}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Advanced Electronic Materials}, volume = {5}, number = {8}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {article} }Journal ArticleZhang, Jiayan; Yu, Ye; Wang, Peng; Luo, Chen; Wu, Xing; Sun, Ziqi; Wang, Jianlu; Hu, Wei Da; Shen, Guozhen
Characterization of Atomic Defects on the Photoluminescence in Two-Dimensional Materials Using Transmission Electron Microscope
In: Infomat, vol. 1, no. 1, pp. 85-97, 2019.@article{RN157, title = {Characterization of Atomic Defects on the Photoluminescence in Two-Dimensional Materials Using Transmission Electron Microscope}, author = {Jiayan Zhang and Ye Yu and Peng Wang and Chen Luo and Xing Wu and Ziqi Sun and Jianlu Wang and Wei Da Hu and Guozhen Shen}, doi = {10.1002/inf2.12002}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Infomat}, volume = {1}, number = {1}, pages = {85-97}, keywords = {原位电镜}, pubstate = {published}, tppubtype = {article} }Journal ArticleYu, Kaihao; Xu, Tao; Wu, Xing; Wang, Wen; Zhang, Hui; Zhang, Qiubo; Tang, Luping; Sun, Litao
In Situ Observation of Crystalline Silicon Growth from SiO2 Atomic Scale
In: Research, vol. 2019, 2019.@article{RN177, title = {In Situ Observation of Crystalline Silicon Growth from SiO2 Atomic Scale}, author = {Kaihao Yu and Tao Xu and Xing Wu and Wen Wang and Hui Zhang and Qiubo Zhang and Luping Tang and Litao Sun}, doi = {10.34133/2019/3289247}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Research}, volume = {2019}, keywords = {原位电镜}, pubstate = {published}, tppubtype = {article} }Journal ArticleXu, Hu; Zhang, Haima; Liu, Yawen; Zhang, Simeng; Sun, Yangye; Guo, Zhongxun; Sheng, Yaochen; Wang, Xudong; Luo, Chen; Wu, Xing; Wang, Jianlu; Hu, Weida; Xu, Zihan; Sun, Qingqing; Zhou, Peng; Shi, Jing; Sun, Zhengzong; Zhang, David Wei; Bao, Wenzhong
Controlled Doping of Wafer-Scale PtSe2 Films for Device Application
In: Advanced Functional Materials, vol. 29, no. 4, 2019, ISSN: 1616-301X.@article{RN161, title = {Controlled Doping of Wafer-Scale PtSe2 Films for Device Application}, author = {Hu Xu and Haima Zhang and Yawen Liu and Simeng Zhang and Yangye Sun and Zhongxun Guo and Yaochen Sheng and Xudong Wang and Chen Luo and Xing Wu and Jianlu Wang and Weida Hu and Zihan Xu and Qingqing Sun and Peng Zhou and Jing Shi and Zhengzong Sun and David Wei Zhang and Wenzhong Bao}, doi = {10.1002/adfm.201805614}, issn = {1616-301X}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Advanced Functional Materials}, volume = {29}, number = {4}, keywords = {传感器, 原位电镜}, pubstate = {published}, tppubtype = {article} }Journal ArticleXu, H.; Wu, X.; Tian, X.; Li, J.; Chu, J.; Sun, L.
Dynamic Structure-Properties Characterization and Manipulation in Advanced Nanodevices
In: Materials Today Nano, vol. 7, 2019, ISSN: 2588-8420.@article{RN152, title = {Dynamic Structure-Properties Characterization and Manipulation in Advanced Nanodevices}, author = {H. Xu and X. Wu and X. Tian and J. Li and J. Chu and L. Sun}, doi = {10.1016/j.mtnano.2019.100042}, issn = {2588-8420}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Materials Today Nano}, volume = {7}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {article} }Journal ArticleWu, Feng; Xia, Hui; Sun, Haiding; Zhang, Junwei; Gong, Fan; Wang, Zhen; Chen, Long; Wang, Peng; Long, Mingsheng; Wu, Xing; Wang, Jianlu; Ren, Wencai; Chen, Xiaoshuang; Lu, Wei; Hu, Weida
AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity
In: Advanced Functional Materials, vol. 29, no. 12, 2019, ISSN: 1616-301X.<Go to ISI>://WOS:000462624900024
@article{RN155, title = {AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity}, author = {Feng Wu and Hui Xia and Haiding Sun and Junwei Zhang and Fan Gong and Zhen Wang and Long Chen and Peng Wang and Mingsheng Long and Xing Wu and Jianlu Wang and Wencai Ren and Xiaoshuang Chen and Wei Lu and Weida Hu}, url = {<Go to ISI>://WOS:000462624900024}, doi = {10.1002/adfm.201900314}, issn = {1616-301X}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Advanced Functional Materials}, volume = {29}, number = {12}, keywords = {传感器}, pubstate = {published}, tppubtype = {article} }Journal ArticleBi, Hengchang; Wan, Shu; Cao, Xiehong; Wu, Xing; Zhou, Yilong; Yin, Kuibo; Su, Shi; Ma, Qinglang; Sindoro, Melinda; Zhu, Jingfang; Zhang, Zhuoran; Zhang, Hua; Sun, Litao
A General and Facile Method for Preparation of Large-Scale Reduced Graphene Oxide Films with Controlled Structures
In: Carbon, vol. 143, pp. 162-171, 2019, ISSN: 0008-6223.<Go to ISI>://WOS:000456710500018
@article{RN162, title = {VSe2/Carbon-Nanotube Compound for All Solid-State Flexible In-Plane Supercapacitor}, author = {Chaolun Wang and Xing Wu and Hejun Xu and Yujin Zhu and Fang Liang and Chen Luo and Yin Xia and Xinying Xie and Jian Zhang and Chungang Duan}, doi = {10.1063/1.5078555}, issn = {0003-6951}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Applied Physics Letters}, volume = {114}, number = {2}, keywords = {传感器}, pubstate = {published}, tppubtype = {article} }Journal ArticleWang, Chaolun; Wu, Xing; Xu, Hejun; Zhu, Yujin; Liang, Fang; Luo, Chen; Xia, Yin; Xie, Xinying; Zhang, Jian; Duan, Chungang
VSe2/Carbon-Nanotube Compound for All Solid-State Flexible In-Plane Supercapacitor
In: Applied Physics Letters, vol. 114, no. 2, 2019, ISSN: 0003-6951.@article{RN162, title = {VSe2/Carbon-Nanotube Compound for All Solid-State Flexible In-Plane Supercapacitor}, author = {Chaolun Wang and Xing Wu and Hejun Xu and Yujin Zhu and Fang Liang and Chen Luo and Yin Xia and Xinying Xie and Jian Zhang and Chungang Duan}, doi = {10.1063/1.5078555}, issn = {0003-6951}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Applied Physics Letters}, volume = {114}, number = {2}, keywords = {传感器}, pubstate = {published}, tppubtype = {article} }Journal ArticleTian, Xiyue; Liu, Zheyu; Luo, Zewei; Wu, Xing; Qiao, Fei; Wang, Xuewen; Li, Guihong; Wu, Jing; Zhang, Jian; Liu, Zheng; Chu, Junhao
Dual-Mode Sensor and Actuator to Learn Human-Hand Tracking and Grasping
In: IEEE Transactions on Electron Devices, vol. 66, no. 12, pp. 5407-5410, 2019, ISSN: 0018-9383.@article{RN149, title = {Dual-Mode Sensor and Actuator to Learn Human-Hand Tracking and Grasping}, author = {Xiyue Tian and Zheyu Liu and Zewei Luo and Xing Wu and Fei Qiao and Xuewen Wang and Guihong Li and Jing Wu and Jian Zhang and Zheng Liu and Junhao Chu}, doi = {10.1109/ted.2019.2949583}, issn = {0018-9383}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {IEEE Transactions on Electron Devices}, volume = {66}, number = {12}, pages = {5407-5410}, keywords = {传感器}, pubstate = {published}, tppubtype = {article} }Journal ArticleLuo, Zewei; Hu, Xiaotong; Tian, Xiyue; Luo, Chen; Xu, Hejun; Li, Quanling; Li, Qianhao; Zhang, Jian; Qiao, Fei; Wu, Xing; Borisenko, V. E.; Chu, Junhao
Structure-Property Relationships in Graphene-Based Strain and Pressure Sensors for Potential Artificial Intelligence Applications
In: Sensors, vol. 19, no. 5, 2019.@article{RN158, title = {Structure-Property Relationships in Graphene-Based Strain and Pressure Sensors for Potential Artificial Intelligence Applications}, author = {Zewei Luo and Xiaotong Hu and Xiyue Tian and Chen Luo and Hejun Xu and Quanling Li and Qianhao Li and Jian Zhang and Fei Qiao and Xing Wu and V. E. Borisenko and Junhao Chu}, doi = {10.3390/s19051250}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Sensors}, volume = {19}, number = {5}, keywords = {传感器, 原位电镜, 石墨烯}, pubstate = {published}, tppubtype = {article} }Journal ArticleLuo, Chen; Yu, Kaihao; Wu, Xing; Sun, Litao
In Situ Interfacial Manipulation of Metastable States Between Nucleation and Decomposition of Single Bismuth Nanoparticle
In: Physica Status Solidi B-Basic Solid State Physics, vol. 256, no. 3, 2019, ISSN: 0370-1972.@article{RN156, title = {In Situ Interfacial Manipulation of Metastable States Between Nucleation and Decomposition of Single Bismuth Nanoparticle}, author = {Chen Luo and Kaihao Yu and Xing Wu and Litao Sun}, doi = {10.1002/pssb.201800442}, issn = {0370-1972}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Physica Status Solidi B-Basic Solid State Physics}, volume = {256}, number = {3}, keywords = {原位电镜}, pubstate = {published}, tppubtype = {article} }Journal ArticleLong, Mingsheng; Wang, Yang; Wang, Peng; Zhou, Xiaohao; Xia, Hui; Luo, Chen; Huang, Shenyang; Zhang, Guowei; Yan, Hugen; Fan, Zhiyong; Wu, Xing; Chen, Xiaoshuang; Lu, Wei; Hu, Weida
Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability
In: ACS Nano, vol. 13, no. 2, pp. 2511-2519, 2019, ISSN: 1936-0851.
@article{RN159, title = {Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability}, author = {Mingsheng Long and Yang Wang and Peng Wang and Xiaohao Zhou and Hui Xia and Chen Luo and Shenyang Huang and Guowei Zhang and Hugen Yan and Zhiyong Fan and Xing Wu and Xiaoshuang Chen and Wei Lu and Weida Hu}, doi = {10.1021/acsnano.8b09476}, issn = {1936-0851}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {ACS Nano}, volume = {13}, number = {2}, pages = {2511-2519}, keywords = {}, pubstate = {published}, tppubtype = {article} }
Journal ArticleLiang, Fang; Xu, Hejun; Dong, Zuoyuan; Xie, Yafeng; Luo, Chen; Xia, Yin; Zhang, Jian; Wang, Jun; Wu, Xing
Substrates and Interlayer Coupling Effects on Mo1-xWxSe2 Alloys
In: Journal of Semiconductors, vol. 40, no. 6, 2019, ISSN: 1674-4926.
@article{RN154, title = {Substrates and Interlayer Coupling Effects on Mo1-xWxSe2 Alloys}, author = {Fang Liang and Hejun Xu and Zuoyuan Dong and Yafeng Xie and Chen Luo and Yin Xia and Jian Zhang and Jun Wang and Xing Wu}, doi = {10.1088/1674-4926/40/6/062005}, issn = {1674-4926}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Journal of Semiconductors}, volume = {40}, number = {6}, keywords = {}, pubstate = {published}, tppubtype = {article} }
Journal ArticleLi, Quanling; Zhang, Jiayan; Li, Qianhao; Li, Guihong; Tian, Xiyue; Luo, Zewei; Qiao, Fei; Wu, Xing; Zhang, Jian
Review of Printed Electrodes for Flexible Devices
In: Frontiers in Materials, vol. 5, 2019, ISSN: 2296-8016.@article{RN160, title = {Review of Printed Electrodes for Flexible Devices}, author = {Quanling Li and Jiayan Zhang and Qianhao Li and Guihong Li and Xiyue Tian and Zewei Luo and Fei Qiao and Xing Wu and Jian Zhang}, doi = {10.3389/fmats.2018.00077}, issn = {2296-8016}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Frontiers in Materials}, volume = {5}, keywords = {传感器}, pubstate = {published}, tppubtype = {article} }Journal ArticleLanza, Mario; Wong, H. S. Philip; Pop, Eric; Ielmini, Daniele; Strukov, Dimitri; Regan, Brian C.; Larcher, Luca; Villena, Marco A.; Yang, J. Joshua; Goux, Ludovic; Belmonte, Attilio; Yang, Yuchao; Puglisi, Francesco M.; Kang, Jinfeng; Magyari-Kope, Blanka; Yalon, Eilam; Kenyon, Anthony; Buckwell, Mark; Mehonic, Adnan; Shluger, Alexander; Li, Haitong; Hou, Tuo-Hung; Hudec, Boris; Akinwande, Deji; Ge, Ruijing; Ambrogio, Stefano; Roldan, Juan B.; Miranda, Enrique; Sune, Jordi; Pey, Kin Leong; Wu, Xing; Raghavan, Nagarajan; Wu, Ernest; Lu, Wei D.; Navarro, Gabriele; Zhang, Weidong; Wu, Huaqiang; Li, Runwei; Holleitner, Alexander; Wurstbauer, Ursula; Lemme, Max C.; Liu, Ming; Long, Shibing; Liu, Qi; Lv, Hangbing; Padovani, Andrea; Pavan, Paolo; Valov, Ilia; Jing, Xu; Han, Tingting; Zhu, Kaichen; Chen, Shaochuan; Hui, Fei; Shi, Yuanyuan
Recommended Methods to Study Resistive Switching Devices
In: Advanced Electronic Materials, vol. 5, no. 1, 2019, ISSN: 2199-160X.@article{RN183, title = {Recommended Methods to Study Resistive Switching Devices}, author = {Mario Lanza and H. S. Philip Wong and Eric Pop and Daniele Ielmini and Dimitri Strukov and Brian C. Regan and Luca Larcher and Marco A. Villena and J. Joshua Yang and Ludovic Goux and Attilio Belmonte and Yuchao Yang and Francesco M. Puglisi and Jinfeng Kang and Blanka Magyari-Kope and Eilam Yalon and Anthony Kenyon and Mark Buckwell and Adnan Mehonic and Alexander Shluger and Haitong Li and Tuo-Hung Hou and Boris Hudec and Deji Akinwande and Ruijing Ge and Stefano Ambrogio and Juan B. Roldan and Enrique Miranda and Jordi Sune and Kin Leong Pey and Xing Wu and Nagarajan Raghavan and Ernest Wu and Wei D. Lu and Gabriele Navarro and Weidong Zhang and Huaqiang Wu and Runwei Li and Alexander Holleitner and Ursula Wurstbauer and Max C. Lemme and Ming Liu and Shibing Long and Qi Liu and Hangbing Lv and Andrea Padovani and Paolo Pavan and Ilia Valov and Xu Jing and Tingting Han and Kaichen Zhu and Shaochuan Chen and Fei Hui and Yuanyuan Shi}, doi = {10.1002/aelm.201800143}, issn = {2199-160X}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Advanced Electronic Materials}, volume = {5}, number = {1}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {article} }Journal ArticleDong, Zuoyuan; Xu, Hejun; Liang, Fang; Luo, Chen; Wang, Chaolun; Cao, Zi-Yu; Chen, Xiao-Jia; Zhang, Jian; Wu, Xing
Raman Characterization on Two-Dimensional Materials-Based Thermoelectricity
In: Molecules, vol. 24, no. 1, 2019.@article{RN179, title = {Raman Characterization on Two-Dimensional Materials-Based Thermoelectricity}, author = {Zuoyuan Dong and Hejun Xu and Fang Liang and Chen Luo and Chaolun Wang and Zi-Yu Cao and Xiao-Jia Chen and Jian Zhang and Xing Wu}, doi = {10.3390/molecules24010088}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Molecules}, volume = {24}, number = {1}, keywords = {}, pubstate = {published}, tppubtype = {article} }Journal ArticleDong, Hui; Xu, Feng; Sun, Ziqi; Wu, Xing; Zhang, Qiubo; Zhai, Yusheng; Tan, Xiao Dong; He, Longbing; Xu, Tao; Zhang, Ze; Duan, Xiangfeng; Sun, Litao
In Situ Interface Engineering for Probing the Limit of Quantum Dot Photovoltaic Devices
In: Nature Nanotechnology, vol. 14, no. 10, pp. 950-+, 2019, ISSN: 1748-3387.@article{RN138, title = {In Situ Interface Engineering for Probing the Limit of Quantum Dot Photovoltaic Devices}, author = {Hui Dong and Feng Xu and Ziqi Sun and Xing Wu and Qiubo Zhang and Yusheng Zhai and Xiao Dong Tan and Longbing He and Tao Xu and Ze Zhang and Xiangfeng Duan and Litao Sun}, doi = {10.1038/s41565-019-0526-7}, issn = {1748-3387}, year = {2019}, date = {2019-01-01}, urldate = {2019-01-01}, journal = {Nature Nanotechnology}, volume = {14}, number = {10}, pages = {950-+}, keywords = {原位电镜}, pubstate = {published}, tppubtype = {article} }
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2018
Journal ArticleZhou J, Xie M, Cui A, Zhou B, Jiang K, Shang L, Hu Z, Chu J H
Manipulating Behaviors from Heavy Tungsten Doping on Interband Electronic Transition and Orbital Structure Variation of Vanadium Dioxide Films
ACS Appl Mater Interfaces, 2018, 10: 30548-30557.Journal ArticleZhang X, Han D, Chen S Y, Duan C G, Chu J H
First-principles study on the alkali chalcogenide secondary compounds in Cu(In,Ga)Se-2 and Cu2ZnSn(S,Se)(4) thin film solar cells
Journal of Energy Chemistry, 2018, 27: 1140-1150.Journal ArticleZhang Q, Deng H M, Yu J J, Xu B, Tao J H, Yang P X, Sun L, Chu J H
Effect of sulfurization temperature of solution-processed Cu-2 SnS3 absorber for low cost photovoltaic cells
Materials Letters, 2018, 228: 447-449.Journal ArticleZhang Q, Deng H M, Yu J J, Cao H Y, Chen L L, Tao J H, Zheng X P, Yang P X, Sun L, Chu J H
Effects of bismuth-doping on the properties of Cu(In, Al)Se-2 thin films prepared by selenization of sputtered stacked precursors
Materials Letters, 2018, 213: 19-22.Journal ArticleYu L, Deng H M, Zhou W L, Shen P, Chen S Q, Yang P X, Chu J H
Synthesis, structure and optics properties of Ba(Fe1/2Nb1/2)O-3 thin film by pulsed laser deposition
Materials Letters, 2018, 219: 89-92.Journal ArticleYu J J, Deng H M, Zhang Q, Tao J H, Sun L, Yang P X, Chu J H
The role of sulfurization temperature on the morphological, structural and optical properties of electroplated Cu2MnSnS4 absorbers for photovoltaics
Materials Letters, 2018, 233: 111-114.Journal ArticleYu J J, Deng H M, Chen L L, Tao J H, Zhang Q, Guo B L, Sun L, Yang P X, Zheng X P, Chu J H
Improvement performance of two-step electrodepositing Cu2MnSnS4 thin film solar cells by tuning Cu-Sn alloy layer deposition time
Materials Chemistry and Physics, 2018, 211: 382-388.Journal ArticleYin C, Wang X, Chen Y, Li D, Lin T, Sun S, Shen H, Du P, Sun J, Meng X, Chu J H, Wong H F, Leung C W, Wang Z, Wang J
A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor
Nanoscale, 2018, 10: 1727-1734.Journal ArticleYan Z, Li H, Li H, Lai G, Chu J H, Guo H, Zhao Q
Simultaneous determination of nine anticoagulant rodenticides by ultra-performance liquid chromatography-tandem mass spectrometry with ultrasound-assisted low-density solvent dispersive liquid-liquid microextraction
J Chromatogr B Analyt Technol Biomed Life Sci, 2018, 1092: 453-458.Journal ArticleXu W L, Li X, Li Q Q, Deng Q L, Zhang J Z, Jiang K, Li Y W, Shang L Y, Hu Z G, Chu J H
Spectroscopic study of phase transitions in ferroelectric Bi0.5Na0.5Ti1-xMnxO3-delta films with enhanced ferroelectricity and energy storage ability
Journal of Alloys and Compounds, 2018, 768: 377-386.Journal ArticleXu H J, Wu X, Li X M, Luo C, Liang F, Orignac E, Zhang J, Chu J H
Properties of graphene-metal contacts probed by Raman spectroscopy
Carbon, 2018, 127: 491-497.Journal ArticleWu G, Wang X, Chen Y, Wang Z, Shen H, Lin T, Hu W, Wang J, Zhang S, Meng X, Chu J H
Ultrahigh photoresponsivity MoS2 photodetector with tunable photocurrent generation mechanism
Nanotechnology, 2018, 29: 485204Journal ArticleWeng G E, Xue J J, Tian J, Hu X B, Bao X M, Lin H C, Chen S Q, Zhu Z Q, Chu J H
Picosecond Random Lasing Based on Three-Photon Absorption in Organometallic Halide CH3NH3PbBr3 Perovskite Thin Films
Acs Photonics, 2018, 5: 2951.Journal ArticleWang X, Wang L, Fu X H, Lu X H, Yue F Y, Yang P X, Yuan X Z, Jing C B, Chu J H
Thermal oxidation-resistant GeO2 ATR hollow waveguide based on NiCr capillary tube and its thermal effects
Applied Physics B-Lasers and Optics, 2018, 124: 156.Journal ArticleWang X, Chen Y, Wu G, Wang J, Tian B, Sun S, Shen H, Lin T, Hu W, Kang T, Tang M, Xiao Y, Sun J, Meng X, Chu J H
Graphene Dirac point tuned by ferroelectric polarization field
Nanotechnology, 2018, 29: 134002.Journal ArticleWang T T, Deng H M, Zhu L Q, Yang P X, Chu J H
Modified magnetization and electron transition behavior in Bi2Fe4O9, Bi2Fe4O9-CoFe2O4 and Bi2Fe4O9-NiFe2O4
Ceramics International, 2018, 44: 2491-2495.Journal ArticleWang T T, Deng H M, Zhou W L, Si S F, Guo B L, Zheng X P, Yang P X, Chu J H
Enhanced ferromagnetism in Ni doped Aurivillius compound Bi6Fe2Ti3O18 thin films prepared by chemical solution deposition
Materials Letters, 2018, 220: 261-265.Journal ArticleWang L, Wang X, Fu X, Guo H, Sun Z, Jing C, Yang P, Lu X, Chu J H
Study on light capturing ability of silicon thin film rectangular hollow waveguide solar cell
Journal of Optoelectronics·Laser, 2018, 29: 235-242.Journal ArticleWang J Y, Deng Q L, Li M J, Wu C, Jiang K, Hu Z G, Chu J H
Facile fabrication of 3D porous MnO@GS/CNT architecture as advanced anode materials for high-performance lithium-ion battery
Nanotechnology, 2018, 29: 315403.Journal ArticleWang J, Wu C, Deng Q, Jiang K, Shang L, Hu Z, Chu J H
Highly durable and cycle-stable lithium storage based on MnO nanoparticle-decorated 3D interconnected CNT/graphene architecture
Nanoscale, 2018, 10: 13140-13148.Journal ArticleWang J, Deng Q, Li M, Jiang K, Hu Z, Chu J H
High-capacity and long-life lithium storage boosted by pseudocapacitance in three-dimensional MnO-Cu-CNT/graphene anodes
Nanoscale, 2018, 10: 2944-2954.Journal ArticleSun Z H, Fu X H, Li G S, Zhang W Q, Zhong Y, Wang X, Jing C B, Lu X H, Yue F Y, Chu J H
Metallic hollow waveguide based on GeO2-NaOH precursor solution for transmission of CO2 laser radiations
Optical and Quantum Electronics, 2018, 50: 391.Journal ArticleSun H, Wang J, Wang F, Xu L, Jiang K, Shang L, Hu Z, Chu J H
Enhanced exciton emission behavior and tunable band gap of ternary W(SxSe1-x)2 monolayer: temperature dependent optical evidence and first-principles calculations
Nanoscale, 2018, 10: 11553-11563.Journal ArticleSong K, Zhu X T, Tang K, Bai W, Zhu L Q, Yang J, Zhang Y Y, Tang X D, Chu J H
Molecular beam epitaxial growth, transmittance and photoluminescence spectra of zinc-blende CdTe thin films with high-quality on perovskite SrTiO3 (111) substrates
Journal of Crystal Growth, 2018, 485: 41-48.Journal Articlei S F, Deng H M, Zhou W L, Wang T T, Yang P X, Chu J H
Modified structure and optical band-gap in perovskite ferroelectric (1-x) KNbO3-xBaCo(1/3)Nb(2/3)O(3) ceramics
Ceramics International, 2018, 44: 14638-14644.Journal ArticleShen P, Guan Z, Zhong N, Xiang P H, Wang R B, Bao Q Y, Yang P X, Sun L, Duan C G, Chu J H
Leakage mechanisms of double-perovskite Bi2FeMnO6 epitaxial thin films
Journal of Physics D-Applied Physics, 2018, 51: 045304.Journal ArticleQu Y, Zhou W, Tong J C, Yao N J, Xu X Y, Hu T, Huang Z M, Chu J H
High sensitivity of room-temperature sub-terahertz photodetector based on In0.53Ga0.47As material
Applied Physics Express, 2018, 11: 112201.Journal ArticlePan X H, Xu H, Gao Y Q, Zhang Y F, Sun L X, Li D, Wen Z J, Li S M, Yu W W, Huang Z M, Wang J L, Zhang B, Sun Y, Sun J L, Meng X J, Chen X, Dagens B, Hao J M, Shen Y, Dai N, Chu J H
Spatial and Frequency Selective Plasmonic Metasurface for Long Wavelength Infrared Spectral Region
Advanced Optical Materials, 2018, 6: 1800337.Journal ArticleMeng C M, Tian B B, Wang H L, Sun S, Shen H, Lin T, Yu J, Sun J L, Meng X J, Chu J H
Structural, electrical and magnetic properties of (110)-oriented BF-BZT-ST Films
Ceramics International, 2018, 44: 9053-9057.Journal ArticleLuo X, Tian W X, Huang Y, Wu X L, Li L H, Chen P, Zhu X G, Li Q L, Chu J H
Rapid vascularization identification using adaptive Gamma correction and support vector machine based on simulated annealing
Journal of Infrared and Millimeter Waves, 2018, 37: 98-105.Journal ArticleLuo M, Yin H H, Chu J H
Strain-Dependent Electronic and Magnetic of Mg-Doped Monolayer of WS2
Journal of Superconductivity and Novel Magnetism, 2018, 31: 1637-1642.Journal ArticleLi M, Deng Q, Wang J, Jiang K, Hu Z, Chu J H
&ITIn situ&IT carbon encapsulation of vertical MoS2 arrays with SnO2 for durable high rate lithium storage: dominant pseudocapacitive behavior
Nanoscale, 2018, 10: 741-751.Journal ArticleLi D, Wang X D, Chen Y, Zhu S X, Gong F, Wu G J, Meng C M, Liu L, Wang L, Lin T, Sun S, Shen H, Wang X J, Hu W D, Wang J L, Sun J L, Meng X J, Chu J H
The ambipolar evolution of a high-erformance WSe2 transistor assisted by a ferroelectric polymer
Nanotechnology, 2018, 29: 105202.Journal ArticleLi C Q, Wang F, Sun Y Y, Jiang K, Gong S J, Hu Z G, Zhou Z Y, Dong X L, Chu J H
Lattice dynamics, phase transition, and tunable fundamental band gap of photovoltaic (K,Ba)(Ni,Nb)O3-delta ceramics from spectral measurements and first-principles calculations
Physical Review B, 2018, 97: 094109.Journal ArticleJin L P, Li Y W, Hu Z G, Chu J H
Full three-dimensional morphology evolution of amorphous thin films for atomic layer deposition
Aip Advances, 2018, 8: 045304.Journal ArticleJiang T, Wang F, Cui A, Guo S, Jiang K, Shang L, Hu Z, Chu J H
In situ exploration of the thermodynamic evolution properties in the type II interface from the WSe2-WS2 lateral heterojunction
Nanotechnology, 2018, 29: 435703.Journal ArticleHu X B, Tao J H, Weng G E, Jiang J C, Chen S Q, Zhu Z Q, Chu J H
Investigation of electrically-active defects in Sb2Se3 thin-film solar cells with up to 5.91% efficiency via admittance spectroscopy
Solar Energy Materials and Solar Cells, 2018, 186: 324-329.Journal ArticleHu X B, Tao J H, Chen S M, Xue J J, Weng G E, Kaijiang, Hu Z G, Jiang J C, Chen S Q, Zhu Z Q, Chu J H
Improving the efficiency of Sb2Se3 thin-film solar cells by post annealing treatment in vacuum condition
Solar Energy Materials and Solar Cells, 2018, 187: 170-175.Journal ArticleHong J, Wang H, Yue F Y, Tomm J W, Kruschke D, Jing C B, Chen S Q, Chen Y, Hu W D, Chu J H
Emission Kinetics from PbSe Quantum Dots in Glass Matrix at High Excitation Levels
Physica Status Solidi-Rapid Research Letters, 2018, 12: 1800012.Journal ArticleHe J, Lu X S, Li X R, Dong Y C, Yue F Y, Chen Y, Sun L, Yang P X, Chu J H
Compositional dependence of photovoltaic properties of Cu2ZnSnSe4 thin film solar cell: Experiment and simulation
Solar Energy, 2018, 159: 572-578.Journal ArticleGuo Y X, Jiang J C, Zuo S H, Shi F W, Tao J H, Hu Z G, Hu X B, Hu G J, Yang P X, Chu J H
RF sputtered CdS films as independent or buffered electron transport layer for efficient planar perovskite solar cell
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Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors
Proc Natl Acad Sci U S A, 2018, 115: 8511-8516.Journal ArticleGao X, Li H, Li H, Dong S, Chu J H, Guo H, Zhao Q
Sensitive determination of nine anticoagulant rodenticides in blood by high resolution mass spectrometry with supported liquid extraction pretreatment
Forensic Sci Int, 2018, 292: 39-44.Journal ArticleDong Y C, Lu X S, Shen P, Chen Y, Yue F Y, Xiang P H, Sun L, Yang P X, Chu J H
Strategic improvement of Cu2SnS3 thin film by different heating rates and photoluminescence investigation
Materials Science in Semiconductor Processing, 2018, 84: 124-130.Journal ArticleDeng Q L, Li M J, Wang J Y, Jiang K, Hu Z G, Chu J H
Carbonized polydopamine wrapping layered KNb3O8 nanoflakes based on alkaline hydrothermal for enhanced and discrepant lithium storage
Journal of Alloys and Compounds, 2018, 749: 803-810.Journal ArticleDeng Q, Li M, Wang J, Jiang K, Hu Z, Chu J H
Free-anchored Nb2O5@graphene networks for ultrafast-stable lithium storage
Nanotechnology, 2018, 29: 185401.Journal ArticleDeng Q, Li M, Wang J, Jiang K, Hu Z, Chu J H
Controllable interlayer space effects of layered potassium triniobate nanoflakes on enhanced pH dependent adsorption-photocatalysis behaviors
Sci Rep, 2018, 8: 6616.Journal ArticleDai Y, Cheng Y, Fedirchuk B, Jordan L M, Chu J H
Motoneuron output regulated by ionic channels: a modeling study of motoneuron frequency-current relationships during fictive locomotion
J Neurophysiol, 2018, 120: 1840-1858.Journal ArticleChen Y, Wang X D, Wu G J, Wang Z, Fang H H, Lin T, Sun S, Shen H, Hu W D, Wang J L, Sun J L, Meng X J, Chu J H
High-Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure
Small, 2018, 14: 1703293.Journal ArticleChen M, Zhou B, Wang F, Xu L P, Jiang K, Shang L Y, Hu Z G, Chu J H
Interlayer coupling and the phase transition mechanism of stacked MoS2/TaS2 heterostructures discovered using temperature dependent Raman and photoluminescence spectroscopy
Rsc Advances, 2018, 8: 21968-21974.Journal ArticleCai J, Wang J L, Gao H, Tian B B, Gong S J, Duan C G, Chu J H
Doping and band gap control at poly(vinylidene fluoride)/graphene interface
Journal of Physics D-Applied Physics, 2018, 51: 195303.ConferenceXing Wu Xiyue Tian, Xuewen Wang; Chu, Junhao
Flexible Artificial Sensory Nerve With Multiple External Stimuli Reflection and Interaction Based on Graphene Heterosturcture Array
NCFE, Nature Conference on Flexible Electronics-Visions of a Flexible Future, 2018.@conference{nokey, title = {Flexible Artificial Sensory Nerve With Multiple External Stimuli Reflection and Interaction Based on Graphene Heterosturcture Array}, author = {Xiyue Tian, Xing Wu, Xuewen Wang, Zheyu Liu, Fei Qiao, Guihong Li, Zewei Luo, Jing Wu, Shanbiao Liu, Quanling Li, Jian Zhang, and Junhao Chu}, year = {2018}, date = {2018-10-12}, urldate = {2018-10-12}, booktitle = {NCFE, Nature Conference on Flexible Electronics-Visions of a Flexible Future}, keywords = {传感器, 石墨烯}, pubstate = {published}, tppubtype = {conference} }ConferenceWang, Yu; Ye, Dawei; Lyu, Liangjian; Xiang, Yingfei; Min, Hao; Shi, C. -J. Richard
A 13.56MHz Wireless Power and Data Transfer Receiver Achieving 75.4% Effective-Power-Conversion Efficiency with 0.1% ASK Modulation Depth and 9.2mW Output Power
2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, ISSN: 2376-8606.
@conference{YWangCShi18, title = {A 13.56MHz Wireless Power and Data Transfer Receiver Achieving 75.4% Effective-Power-Conversion Efficiency with 0.1% ASK Modulation Depth and 9.2mW Output Power}, author = {Yu Wang and Dawei Ye and Liangjian Lyu and Yingfei Xiang and Hao Min and C. -J. Richard Shi}, doi = {10.1109/ISSCC.2018.8310224}, issn = {2376-8606}, year = {2018}, date = {2018-02-01}, urldate = {2018-02-01}, booktitle = {2018 IEEE International Solid - State Circuits Conference - (ISSCC)}, pages = {142-144}, keywords = {芯片设计}, pubstate = {published}, tppubtype = {conference} }
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Piezoelectric/Photoluminescence Effect in One-Dimensional Lead-Free Nanofibers
In: Scripta Materialia, vol. 145, pp. 81-84, 2018, ISSN: 1359-6462.
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Simultaneous Atomic-Level Visualization and High Precision Photocurrent Measurements on Photoelectric Devices by In Situ TEM
In: RSC Advances, vol. 8, no. 2, pp. 948-953, 2018, ISSN: 2046-2069.
@article{RN88, title = {Simultaneous Atomic-Level Visualization and High Precision Photocurrent Measurements on Photoelectric Devices by In Situ TEM}, author = {Hui Dong and Tao Xu and Ziqi Sun and Qiubo Zhang and Xing Wu and Longbing He and Feng Xu and Litao Sun}, doi = {10.1039/c7ra10696c}, issn = {2046-2069}, year = {2018}, date = {2018-01-01}, urldate = {2018-01-01}, journal = {RSC Advances}, volume = {8}, number = {2}, pages = {948-953}, keywords = {原位电镜}, pubstate = {published}, tppubtype = {article} }
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Raman Spectroscopy Characterization of Two-Dimensional Materials
In: Chinese Physics B, vol. 27, no. 3, 2018, ISSN: 1674-1056.
@article{RN166, title = {Raman Spectroscopy Characterization of Two-Dimensional Materials}, author = {Fang Liang and Hejun Xu and Xing Wu and Chaolun Wang and Chen Luo and Jian Zhang}, doi = {10.1088/1674-1056/27/3/037802}, issn = {1674-1056}, year = {2018}, date = {2018-01-01}, urldate = {2018-01-01}, journal = {Chinese Physics B}, volume = {27}, number = {3}, keywords = {}, pubstate = {published}, tppubtype = {article} }
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Metallic few-layered VSe2 Nanosheets: High Two-Dimensional Conductivity for Flexible In-Plane Solid-State Supercapacitors
In: Journal of Materials Chemistry A, vol. 6, no. 18, pp. 8299-8306, 2018, ISSN: 2050-7488.
@article{RN164, title = {Metallic few-layered VSe2 Nanosheets: High Two-Dimensional Conductivity for Flexible In-Plane Solid-State Supercapacitors}, author = {Chaolun Wang and Xing Wu and Yonghui Ma and Gang Mu and Yaoyi Li and Chen Luo and Hejun Xu and Yuanyuan Zhang and Jing Yang and Xiaodong Tang and Jian Zhang and Wenzhong Bao and Chungang Duan}, doi = {10.1039/c8ta00089a}, issn = {2050-7488}, year = {2018}, date = {2018-01-01}, urldate = {2018-01-01}, journal = {Journal of Materials Chemistry A}, volume = {6}, number = {18}, pages = {8299-8306}, keywords = {传感器}, pubstate = {published}, tppubtype = {article} }
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Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects
In: Advanced Science, vol. 5, no. 6, 2018.@article{RN184, title = {Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects}, author = {Xing Wu and Kaihao Yu and Dongkyu Cha and Michel Bosman and Nagarajan Raghavan and Xixiang Zhang and Kun Li and Qi Liu and Litao Sun and Kinleong Pey}, doi = {10.1002/advs.201800096}, year = {2018}, date = {2018-01-01}, urldate = {2018-01-01}, journal = {Advanced Science}, volume = {5}, number = {6}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {article} }Journal ArticleXu, Hejun; Wu, Xing; Li, Xinming; Luo, Chen; Liang, Fang; Orignac, Edmond; Zhang, Jian; Chu, Junhao
Properties of Graphene-Metal Contacts Probed by Raman Spectroscopy
In: Carbon, vol. 127, pp. 491-497, 2018, ISSN: 0008-6223.@article{RN84, title = {Properties of Graphene-Metal Contacts Probed by Raman Spectroscopy}, author = {Hejun Xu and Xing Wu and Xinming Li and Chen Luo and Fang Liang and Edmond Orignac and Jian Zhang and Junhao Chu}, doi = {10.1016/j.carbon.2017.11.035}, issn = {0008-6223}, year = {2018}, date = {2018-01-01}, urldate = {2018-01-01}, journal = {Carbon}, volume = {127}, pages = {491-497}, keywords = {石墨烯}, pubstate = {published}, tppubtype = {article} }Journal ArticleXu, Hu; Zhang, Haima; Guo, Zhongxun; Shan, Yuwei; Wu, Shiwei; Wang, Jianlu; Hu, Weida; Liu, Hanqi; Sun, Zhengzong; Luo, Chen; Wu, Xing; Xu, Zihan; Zhang, David Wei; Bao, Wenzhong; Zhou, Peng
High-Performance Wafer-Scale MoS2 Transistors toward Practical Application
In: Small, vol. 14, no. 48, 2018, ISSN: 1613-6810.
@article{RN163, title = {High-Performance Wafer-Scale MoS2 Transistors toward Practical Application}, author = {Hu Xu and Haima Zhang and Zhongxun Guo and Yuwei Shan and Shiwei Wu and Jianlu Wang and Weida Hu and Hanqi Liu and Zhengzong Sun and Chen Luo and Xing Wu and Zihan Xu and David Wei Zhang and Wenzhong Bao and Peng Zhou}, doi = {10.1002/smll.201803465}, issn = {1613-6810}, year = {2018}, date = {2018-01-01}, urldate = {2018-01-01}, journal = {Small}, volume = {14}, number = {48}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }
Journal ArticleYu, Kaihao; Zhao, Wen; Wu, Xing; Zhuang, Jianing; Hu, Xiaohui; Zhang, Qiubo; Sun, Jun; Xu, Tao; Chai, Yang; Ding, Feng; Sun, Litao
In Situ Atomic-Scale Observation of Monolayer Graphene Growth From SiC
In: Nano Research, vol. 11, no. 5, pp. 2809-2820, 2018, ISSN: 1998-0124.al, vol. 10, no. 1, 2018, ISSN: 1943-0655.
@article{RN165, title = {In Situ Atomic-Scale Observation of Monolayer Graphene Growth From SiC}, author = {Kaihao Yu and Wen Zhao and Xing Wu and Jianing Zhuang and Xiaohui Hu and Qiubo Zhang and Jun Sun and Tao Xu and Yang Chai and Feng Ding and Litao Sun}, doi = {10.1007/s12274-017-1911-x}, issn = {1998-0124}, year = {2018}, date = {2018-01-01}, urldate = {2018-01-01}, journal = {Nano Research}, volume = {11}, number = {5}, pages = {2809-2820}, keywords = {原位电镜, 石墨烯}, pubstate = {published}, tppubtype = {article} }
Journal ArticleZhang, Hanyu; Zhou, Linjie; Rahman, B. M. A.; Wu, Xing; Lu, Liangjun; Xu, Youhua; Xu, Jian; Song, Junchao; Hu, Zhigao; Xu, Liping; Chen, Jianping
Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation
In: IEEE Photonics Journal, vol. 10, no. 1, 2018, ISSN: 1943-0655.@article{RN185, title = {Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation}, author = {Hanyu Zhang and Linjie Zhou and B. M. A. Rahman and Xing Wu and Liangjun Lu and Youhua Xu and Jian Xu and Junchao Song and Zhigao Hu and Liping Xu and Jianping Chen}, doi = {10.1109/jphot.2017.2781710}, issn = {1943-0655}, year = {2018}, date = {2018-01-01}, urldate = {2018-01-01}, journal = {IEEE Photonics Journal}, volume = {10}, number = {1}, keywords = {}, pubstate = {published}, tppubtype = {article} }Journal ArticleZheng, Dingshan; Fang, Hehai; Long, Mingsheng; Wu, Feng; Wang, Peng; Gong, Fan; Wu, Xing; Ho, Johnny C.; Liao, Lei; Hu, Weida
High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition
In: ACS Nano, vol. 12, no. 7, pp. 7239-7245, 2018, ISSN: 1936-0851.@article{RN113, title = {High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition}, author = {Dingshan Zheng and Hehai Fang and Mingsheng Long and Feng Wu and Peng Wang and Fan Gong and Xing Wu and Johnny C. Ho and Lei Liao and Weida Hu}, doi = {10.1021/acsnano.8b03291}, issn = {1936-0851}, year = {2018}, date = {2018-01-01}, urldate = {2018-01-01}, journal = {ACS Nano}, volume = {12}, number = {7}, pages = {7239-7245}, keywords = {}, pubstate = {published}, tppubtype = {article} }
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2017
Journal ArticleZhu Z, Chu J H
Surface Potential Distribution Model Based on Analytical Channel Potential Approximation for Ultra-Thin Body Poly-Si Thin Film Transistors in Linear Region
Surface Review and Letters, 2017, 24: 1750108.Journal ArticleZhu X T, Song K, Tang K, Bai W, Bai J W, Zhu L Q, Yang J, Zhang Y Y, Qi R J, Huang R, Tang X D, Chu J H
Growth of the metastable zinc-blende MnTe films on highly dissimilar perovskite SrTiO3 (001) substrates by molecular beam epitaxy
Journal of Alloys and Compounds, 2017, 729: 95-99.Journal ArticleZhang Y, Xia D, Quan P, Feng Z, Yang P, Chu J H
The study on hot spots failure of polycrystalline wafer based photovoltaic modules
Acta Energiae Solaris Sinica, 2017, 38: 1854-1861.Journal ArticleZhang Q, Deng H M, Chen L L, Yu L, Tao J H, Sun L, Yang P X, Chu J H
Cation substitution induced structural transition, band gap engineering and grain growth of Cu2CdxZn1-xSnS4 thin films
Journal of Alloys and Compounds, 2017, 695: 482-488.Journal ArticleZhang Q, Deng H M, Chen L L, Tao J H, Yu J J, Yang P X, Chu J H
Effects of sulfurization temperature on the structural and optical properties of Cu2CdSnS4 thin films prepared by direct liquid method
Materials Letters, 2017, 193: 206-209.Journal ArticleZhang P, Zhang W, Wang J, Jiang K, Zhang J, Li W, Wu J, Hu Z, Chu J H
The electro-optic mechanism and infrared switching dynamic of the hybrid multilayer VO2/Al:ZnO heterojunctions
Sci Rep, 2017, 7: 4425.Journal ArticleYu L, Deng H M, Zhou W L, Yang P X, Chu J H
Structural characteristics and optical properties of lead-free Bi(Zn1/2Ti1/2) O-3-BaTiO3 ceramics
Ceramics International, 2017, 43: 6175-6179.Journal ArticleYu L, Deng H M, Zhou W L, Yang P X, Chu J H
Band gap engineering and magnetic switching in a novel perovskite (1-x)KNbO3-xBaNb1/2Fe1/2O3
Materials Letters, 2017, 202: 39-43.Journal ArticleYu J J, Deng H M, Tao J H, Chen L L, Cao H Y, Sun L, Yang P X, Chu J H
Synthesis of Cu2MnSnS4 thin film deposited on seeded fluorine doped tin oxide substrate via a green and low-cost electrodeposition method
Materials Letters, 2017, 191: 186-188.Journal ArticleYao Q F, Cai J, Tong W Y, Gong S J, Wang J Q, Wan X G, Duan C G, Chu J H
Manipulation of the large Rashba spin splitting in polar two-dimensional transition-metal dichalcogenides
Physical Review B, 2017, 95: 165401.Journal ArticleXue S, Zhao X L, Wang J L, Tian B B, Huang H, Meng C M, Liu L, Ye L, Sun J L, Meng X J, Zhang X D, Chu J H
Preparation of La0.67Ca0.23Sr0.1MnO3 thin films with interesting electrical and magnetic properties via pulsed-laser deposition
Science China-Physics Mechanics & Astronomy, 2017, 60: 027521.ConferenceWu J, Huang Z, Jiang L, Gao Y, Zhou W, Chu J H
2017 Flexible thermistors: MCNO films with low resistivity and high TCR deposited on flexible organic sheets by RF magnetron sputtering
the Infrared Remote Sensing and Instrumentation Xxv, San Diego, California, United States, Aug 07-08, 2017.Journal ArticleWang X D, Liu C S, Chen Y, Wu G J, Yan X, Huang H, Wang P, Tian B B, Hong Z C, Wang Y T, Sun S, Shen H, Lin T, Hu W D, Tang M H, Zhou P, Wang J, Sun J J, Meng X J, Chu J H, Li Z
Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels
2d Materials, 2017, 4: 025036.Journal ArticleWang X, Wang L, Fu X H, Jing C B, Yue F Y, Yang P X, Chu J H
Thermal behaviors of stainless steel tube based GeO2 ATR hollow fibers for transmitting CO2 laser radiations
Optics and Laser Technology, 2017, 95: 42-45.Journal ArticleWang T T, Deng H M, Zhou W L, Yang P X, Chu J H
Structural, ferromagnetic and optical properties of pure bismuth A-site polar perovskite Bi(Mg3/8Fe2/8Ti3/8)O-3 synthesized at ambient pressure
Journal of Materials Science-Materials in Electronics, 2017, 28: 934-938.Journal ArticleWang T T, Deng H M, Zhou W L, Meng X K, Yang P X, Chu J H
Modified optical and magnetic properties at room-temperature across lead-free morphotropic phase boundary in (1-x)BiTi3/8Fe2/8Mg3/8O3-xCaTiO3
Ceramics International, 2017, 43: 6453-6459.Journal ArticleWang T T, Deng H M, Shen P, Hong J, Yue F Y, Zhu L Q, Yang P X, Chu J H
The synthesis and microstructural, optical, magnetic characterizations of m 0 0-oriented epitaxial Bi2Fe4O9 thin film by pulsed laser deposition
Materials Letters, 2017, 204: 81-84.Journal ArticleWang T T, Deng H M, Cao H Y, Zhou W L, Weng G E, Chen S Q, Yang P X, Chu J H
Structural, optical and magnetic modulation in Mn and Mg co-doped BiFeO3 films grown on Si substrates
Materials Letters, 2017, 199: 116-119.Journal ArticleWang T, Deng H, Meng X, Cao H, Zhou W, Shen P, Zhang Y, Yang P, Chu J H
Tunable polarization and magnetization at room-temperature in narrow bandgap Aurivillius Bi6Fe2-xCox/2Nix/2Ti3O18
Ceramics International, 2017, 43: 8792-8799.Journal ArticleWang L, Wang X, Fu X H, Sun Z H, Jing C B, Lu X H, Yang P X, Chu J H
Study on light-capture performance of silicon thin-film hollow waveguide solar cells
Optical and Quantum Electronics, 2017, 49: 369.Journal ArticleWang J Y, Zhang P, Deng Q L, Jiang K, Zhang J Z, Hu Z G, Chu J H
Electronic transitions of the transparent delafossite-type CuGa1-xCrxO2 system: first-principles calculations and temperature-dependent spectral experiments
Journal of Materials Chemistry C, 2017, 5: 183-191.Journal ArticleWang J, Deng Q, Li M, Jiang K, Zhang J, Hu Z, Chu J H
Copper ferrites@reduced graphene oxide anode materials for advanced lithium storage applications
Sci Rep, 2017, 7: 8903.Journal ArticleWang H, Hong J, Yue F, Jing C, Chu J H
Optical homogeneity analysis of Hg1-xCdxTe epitaxial layers: How to circumvent the influence of impurity absorption bands?
Infrared Physics & Technology, 2017, 82: 1-7.Journal ArticleWang F, Wang J, Guo S, Zhang J, Hu Z, Chu J H
Tuning Coupling Behavior of Stacked Heterostructures Based on MoS2, WS2, and WSe2
Scientific Reports, 2017, 7: 44712Journal ArticleTian B, Nukala P, Hassine M B, Zhao X, Wang X, Shen H, Wang J, Sun S, Lin T, Sun J, Ge J, Huang R, Duan C, Reiss T, Varela M, Dkhil B, Meng X, Chu J H
Interfacial memristors in Al-LaNiO3 heterostructures
Phys Chem Chem Phys, 2017, 19: 16960-16968.Journal ArticleSun Y B, Xu W L, Fu X H, Sun Z H, Wang J Y, Zhang J Z, Rosenbach D, Qi R J, Jiang K, Jing C B, Hu Z G, Ma X M, Chu J H
Evaluation of lattice dynamics, infrared optical properties and visible emissions of hexagonal GeO2 films prepared by liquid phase deposition
Journal of Materials Chemistry C, 2017, 5: 12792-12799.Journal ArticleSun L, Ma J H, Yao N J, Huang Z M, Chu J H
Influence of various Cu contents on the microstructure of Cu( In, Ga)Se-2 thin films
Journal of Infrared and Millimeter Waves, 2017, 36: 1.Journal ArticleSun L, Fang Y W, He J, Zhang Y Y, Qi R J, He Q, Huang R, Xiang P H, Tang X D, Yang P X, Chu J H, Chu Y H, Duan C G
The preparation, and structural and multiferroic properties of B-site ordered double-perovskite Bi2FeMnO6
Journal of Materials Chemistry C, 2017, 5: 5494-5500.Journal ArticleSong Z Y, Shang L Y, Lin T, Wei Y F, Chu J H
Maximum entropy mobility spectrum analysis of LPE-grown and anodic oxidated Hg1-xCdxTe(x=0.237)
Journal of Physics: Conference Series, 2017, 864: 012026.Journal ArticleShen D P, Zhang X D, Sun Y, Kang T T, Dai N, Chu J H, Yu G L
Magnetotransport property of negative band gap HgCdTe bulk material
Acta Physica Sinica, 2017, 66: 247301.Journal ArticleSha T T, Li W W, Chen S Y, Jiang K, Zhu J J, Hu Z G, Huang Z M, Chu J H, Kokh K A, Andreev Y M
Effects of S-doping on the electronic transition, band gap, and optical absorption of GaSe1-xSx single crystals
Journal of Alloys and Compounds, 2017, 721: 164-171.Journal ArticleQiao Q, Xu D, Li Y W, Zhang J Z, Hu Z G, Chu J H
Detection of resistive switching behavior based on the Al2O3/ZnO/Al2O3 structure with alumina buffers
Thin Solid Films, 2017, 623: 8-13.Journal ArticleQiao Q, Li Y W, Zhang J Z, Hu Z G, Chu J H
Experimental investigations of the bismuth oxide film grown by atomic layer deposition using triphenyl bismuth
Thin Solid Films, 2017, 622: 65-70.Journal ArticleQiao Q, Jin L P, Li Y W, Li M J, Hu Z G, Chu J H
Influence of composition on structure, morphology and dielectric properties of BixAlyOz composite films synthesized by atomic layer deposition
Aip Advances, 2017, 7: 045120.Journal ArticleMeng Y H, Bai W, Gao H, Gong S J, Wang J Q, Duan C G, Chu J H
Ferroelectric control of Rashba spin orbit coupling at the GeTe(111)/InP(111) interface
Nanoscale, 2017, 9: 17957-17962.Journal ArticleMeng X K, Deng H M, Zhang Q, Sun L, Yang P X, Chu J H
Investigate the growth mechanism of Cu2FeSnS4 thin films by sulfurization of metallic precursor
Materials Letters, 2017, 186: 138-141.Journal ArticleLuo C, Wang C, Wu X, Zhang J, Chu J H
In Situ Transmission Electron Microscopy Characterization and Manipulation of Two-Dimensional Layered Materials beyond Graphene
Small, 2017, 13: 1604259.Journal ArticleLiu S, Wu X, Zhang D, Guo C, Wang P, Hu W, Li X, Zhou X, Xu H, Luo C, Zhang J, Chu J H
Ultrafast Dynamic Pressure Sensors Based on Graphene Hybrid Structure
Acs Applied Materials & Interfaces, 2017, 9: 24148-24154.Journal ArticleLiu L, Wang X D, Han L, Tian B B, Chen Y, Wu G J, Li D, Yan M G, Wang T, Sun S O, Shen H, Lin T, Sun J L, Duan C G, Wang J L, Meng X J, Chu J H
Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate
Aip Advances, 2017, 7: 065121.Journal ArticleLi X R, Cao H Y, Dong Y C, Yue F Y, Chen Y, Xiang P H, Sun L, Yang P X, Chu J H
Investigation of Cu2ZnSnS4 thin films with controllable Cu composition and its influence on photovoltaic properties for solar cells
Journal of Alloys and Compounds, 2017, 694: 833-840.Journal ArticleLi W W, Sha T T, Wang Y, Yu W L, Jiang K, Zhou H, Liu C, Hu Z G, Chu J H
Effects of deposition methods and processing techniques on band gap, interband electronic transitions, and optical absorption in perovskite CH3NH3PbI3 films
Applied Physics Letters, 2017, 111: 011906.Journal ArticleLi S M, Ma G H, Wang C, Zhao W C, Chen X S, Chu J H, Dai N, Shi W Z, Hu G J
Electrical and optical properties of a kind of ferroelectric oxide films comprising of PbZr0.4Ti0.6O3 stacks
Journal of Applied Physics, 2017, 122: 024102.Journal ArticleLi S M, Hu G J, Wang C, Zhao W C, Ma G H, Chen X S, Chu J H, Dai N
PbZr0.4Ti0.6O3 dielectric reflectors with large photonic band gap and high average optical reflectivity
Journal of the American Ceramic Society, 2017, 100: 1275-1279.Journal ArticleLi Q Q, Wang J Y, Li M J, Guo S, Zhang J Z, Hu Z G, Zhou Z Y, Wang G S, Dong X L, Chu J H
Structure evolution mechanism of Na0.5Bi2.5Nb2-xWxO9+delta ferroelectric ceramics: Temperature-dependent optical evidence and first-principles calculations
Physical Review B, 2017, 96: 024101.Journal ArticleLi M, Wang J, Zhang P, Deng Q, Zhang J, Jiang K, Hu Z, Chu J H
Superior adsorption and photoinduced carries transfer behaviors of dandelion-shaped Bi2S3@MoS2: experiments and theory
Sci Rep, 2017, 7: 42484.ConferenceJing W, Zhiming H, Yanqing G, Chu J H
Flexible thermistors for far infrared detection: MCNO films with low resistivity and high TCR deposited on flexible organic sheets
2017 42nd International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) Cancun, Mexico, 27 Aug.-1 Sept. 2017Journal ArticleGuo S, Li M J, Li Q Q, Hu Z G, Li T, Wu L C, Song Z T, Chu J H
Localized states evolution and nitrides separation before crystallization in nitrogen incorporated GeTe: Evidence from ellipsometric spectra
Applied Physics Letters, 2017, 110: 161906.Journal ArticleGuo H, Wang L, Wang X, Yang P, Jing C, Chu J H
Fabrication and light capturing performance of stainless steel hollow fiber silicon solar cells
Material Science and Technology, 2017, 25: 48-54.Journal ArticleGuo B L, Deng H M, Zhai X Z, Zhou W H, Meng X K, Weng G E, Chen S Q, Yang P X, Chu J H
Cr doping-induced structural phase transition, optical tuning and magnetic enhancement in BiFeO3 thin films
Materials Letters, 2017, 186: 198-201.Journal ArticleGuan Z, Jiang Z Z, Tian B B, Zhu Y P, Xiang P H, Zhong N, Duan C G, Chu J H
Identifying intrinsic ferroelectricity of thin film with piezoresponse force microscopy
Aip Advances, 2017, 7: 095116.Journal ArticleDeng Q L, Li M J, Wang J Y, Zhang P, Jiang K, Zhang J Z, Hu Z G, Chu J H
Boosted adsorption-photocatalytic activities and potential lithium intercalation applications of layered potassium hexaniobate nano-family
Rsc Advances, 2017, 7: 28105-28113.Journal ArticleDeng Q, Li M, Wang J, Zhang P, Jiang K, Zhang J, Hu Z, Chu J H
Exploring optoelectronic properties and mechanisms of layered ferroelectric K4Nb6O17 nanocrystalline films and nanolaminas
Sci Rep, 2017, 7: 1883.Journal ArticleCui A Y, Jiang K, Zhang P, Xu L P, Xu G S, Chen X M, Hu Z G, Chu J H
In Situ Exploration of Thermal-Induced Domain Evolution with Phase Transition in LiNbO3-Modified K0.5Na0.5NbO3 Single Crystal
Journal of Physical Chemistry C, 2017, 121: 14322-14329.Journal ArticleCheng L, Wei L M, Liang H X, Yan Y D, Cheng G H, Lv M, Lin T, Kang T T, Yu G L, Chu J H, Zhang Z Y, Zeng C G
Optical Manipulation of Rashba Spin-Orbit Coupling at SrTiO3-Based Oxide Interfaces
Nano Letters, 2017, 17: 6534-6539.Journal ArticleChen L L, Deng H M, Zhang Q, Yu J J, Tao J H, Sun L, Yang P X, Chu J H
Microstructural and morphological properties of spin-coated Cu2MnSn (S,Se)(4) thin films for solar cell applications
Materials Letters, 2017, 206: 249-252.Journal ArticleChen L L, Deng H M, Tao J H, Sun L, Yang P X, Chu J H
Effect of the post-selenization time on the structural and optical properties of Cu2MnSn(S,Se)(4) thin films synthesized by sol-gel technique
Materials Letters, 2017, 201: 185-188.Journal ArticleBai J W, Yang J, Zhang Y Y, Bai W, Lv Z F, Tang K, Sun J L, Meng X J, Tang X D, Chu J H
The ac sub-coercive-field dielectric resonses of (Pb, Sr)TiO3 films at low temperature
Ceramics International, 2017, 43: S516-S519.Journal ArticleXu, Hejun; Wu, Xing; Li, Xinming; Luo, Chen; Liang, Fang; Orignac, Edmond; Zhang, Jian; Chu, Junhao
Properties of Graphene-metal Contacts Probed by Raman Spectroscopy
In: ACS Nano, vol. 12, no. 7, pp. 7239-7245, 2018, ISSN: 1936-0851.
@article{nokey, title = {Properties of Graphene-metal Contacts Probed by Raman Spectroscopy}, author = {Hejun Xu and Xing Wu and Xinming Li and Chen Luo and Fang Liang and Edmond Orignac and Jian Zhang and Junhao Chu}, url = {http://www.insitudevices.com/wp-admin/admin.php?page=teachpress%2Faddpublications.php}, doi = {10.1016/j.carbon.2017.11.035}, issn = {0008-6223}, year = {2017}, date = {2017-11-15}, urldate = {2017-11-15}, journal = {Carbon}, volume = {127}, pages = {491-497}, keywords = {石墨烯}, pubstate = {published}, tppubtype = {article} }
Journal ArticleLiu, Bao; Lu, Bin; Chen, Xiaoqiu; Wu, Xin; Shi, Shengjie; Xu, Lei; Liu, Yun; Wang, Feifei; Zhao, Xiangyong; Shi, Wangzhou
A High-P erformance Flexible Piezoelectric Energy Harvester Based on Lead-Free (Na0.5Bi0.5)TiO3-BaTiO3 Piezoelectric Nanofibers
In: Journal of Materials Chemistry A, vol. 5, no. 45, pp. 23634-23640, 2017, ISSN: 2050-7488.@article{RN82, title = {A High-P erformance Flexible Piezoelectric Energy Harvester Based on Lead-Free (Na0.5Bi0.5)TiO3-BaTiO3 Piezoelectric Nanofibers}, author = {Bao Liu and Bin Lu and Xiaoqiu Chen and Xin Wu and Shengjie Shi and Lei Xu and Yun Liu and Feifei Wang and Xiangyong Zhao and Wangzhou Shi}, doi = {10.1039/c7ta07570g}, issn = {2050-7488}, year = {2017}, date = {2017-01-01}, urldate = {2017-01-01}, journal = {Journal of Materials Chemistry A}, volume = {5}, number = {45}, pages = {23634-23640}, keywords = {}, pubstate = {published}, tppubtype = {article} }Journal ArticleLiu, Shanbiao; Wu, Xing; Zhang, Dongdong; Guo, Congwei; Wang, Peng; Hu, Weida; Li, Xinming; Zhou, Xiaofeng; Xu, Hejun; Luo, Chen; Zhang, Jian; Chu, Junhao
Ultrafast Dynamic Pressure Sensors Based on Graphene Hybrid Structure
In: ACS Applied Materials & Interfaces, vol. 9, no. 28, pp. 24148-24154, 2017, ISSN: 1944-8244.@article{RN97, title = {Ultrafast Dynamic Pressure Sensors Based on Graphene Hybrid Structure}, author = {Shanbiao Liu and Xing Wu and Dongdong Zhang and Congwei Guo and Peng Wang and Weida Hu and Xinming Li and Xiaofeng Zhou and Hejun Xu and Chen Luo and Jian Zhang and Junhao Chu}, doi = {10.1021/acsami.7b07311}, issn = {1944-8244}, year = {2017}, date = {2017-01-01}, urldate = {2017-01-01}, journal = {ACS Applied Materials & Interfaces}, volume = {9}, number = {28}, pages = {24148-24154}, keywords = {传感器, 石墨烯}, pubstate = {published}, tppubtype = {article} }
Journal ArticleLuo, Chen; Wang, Chaolun; Wu, Xing; Zhang, Jian; Chu, Junhao
In Situ Transmission Electron Microscopy Characterization and Manipulation of Two-Dimensional Layered Materials beyond Graphene
In: Small, vol. 13, no. 35, 2017, ISSN: 1613-6810.@article{RN86, title = {In Situ Transmission Electron Microscopy Characterization and Manipulation of Two-Dimensional Layered Materials beyond Graphene}, author = {Chen Luo and Chaolun Wang and Xing Wu and Jian Zhang and Junhao Chu}, doi = {10.1002/smll.201604259}, issn = {1613-6810}, year = {2017}, date = {2017-01-01}, urldate = {2017-01-01}, journal = {Small}, volume = {13}, number = {35}, keywords = {原位电镜}, pubstate = {published}, tppubtype = {article} }Journal ArticleZhang, Feng; Chen, Cheng; Kershaw, Stephen V.; Xiao, Changtao; Han, Junbo; Zou, Bingsuo; Wu, Xing; Chang, Shuai; Dong, Yuping; Rogach, Andrey L.; Zhong, Haizheng
Ligand-Controlled Formation and Photoluminescence Properties of CH3NH3PbBr3 Nanocubes and Nanowires
In: Chemnanomat, vol. 3, no. 5, pp. 303-310, 2017, ISSN: 2199-692X.@article{RN77, title = {Ligand-Controlled Formation and Photoluminescence Properties of CH3NH3PbBr3 Nanocubes and Nanowires}, author = {Feng Zhang and Cheng Chen and Stephen V. Kershaw and Changtao Xiao and Junbo Han and Bingsuo Zou and Xing Wu and Shuai Chang and Yuping Dong and Andrey L. Rogach and Haizheng Zhong}, doi = {10.1002/cnma.201700034}, issn = {2199-692X}, year = {2017}, date = {2017-01-01}, urldate = {2017-01-01}, journal = {Chemnanomat}, volume = {3}, number = {5}, pages = {303-310}, keywords = {}, pubstate = {published}, tppubtype = {article} }ConferenceQin, Li; Zheyu, Liu; Fei, Qiao; Xing, Wu; Chaolun, Wang; Qi, Wei; Huazhong, Yang
From MISSION IMPOSSIBLE to Mission Possible: Fully Flexible Intelligent Contact Lens for Image Classification with Analog-to-Information Processing
2017 IEEE International Symposium on Circuits and Systems (ISCAS) , 2017.@conference{RN200, title = {From MISSION IMPOSSIBLE to Mission Possible: Fully Flexible Intelligent Contact Lens for Image Classification with Analog-to-Information Processing}, author = {Li Qin and Liu Zheyu and Qiao Fei and Wu Xing and Wang Chaolun and Wei Qi and Yang Huazhong}, doi = {10.1109/iscas.2017.8050607}, year = {2017}, date = {2017-01-01}, urldate = {2017-01-01}, booktitle = {2017 IEEE International Symposium on Circuits and Systems (ISCAS) }, journal = {2017 IEEE International Symposium on Circuits and Systems (ISCAS)}, pages = {4 pp.-4 pp.}, keywords = {传感器, 芯片设计}, pubstate = {published}, tppubtype = {conference} }
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2016
Journal ArticleZhu L Q, Shao J, Zhu L, Chen X R, Lin T, Zhang Y Y, Li Y Q, Qi Z, Bai W, Tang X D, Chu J H
Spin-glass state induced low field magnetization-step effect in a Hg1-xMnxTe single crystal
Physica Status Solidi B-Basic Solid State Physics, 2016, 253: 2015-2019.Journal ArticleZhu L Q, Shao J, Chen X R, Li Y Q, Zhu L, Qi Z, Lin T, Bai W, Tang X D, Chu J H
Photoinduced magnetization effect in a p-type Hg1-xMnxTe single crystal investigated by infrared photoluminescence
Physical Review B, 2016, 94: 155201.Journal ArticleZhu J J, Zhang J Z, Jiang K, Zhang H W, Hu Z G, Luo H S, Chu J H
Coexistence of Ferroelectric Phases and Phonon Dynamics in Relaxor Ferroelectric Na0.5Bi0.5TiO3 Based Single Crystals
Journal of the American Ceramic Society, 2016, 99: 2408-2414.Journal ArticleZhou W L, Deng H M, Zheng T, Yang P X, Chu J H
Pb-free semiconductor ferroelectrics: An experimental study of Ba(Ti0.75Ce0.125Pd0.125)O3-delta thin films
Materials Letters, 2016, 177: 1-4.Journal ArticleZhou W L, Deng H M, Yang P X, Chu J H
Optical modulation and magnetic transition in PbTi1-xPdxO3-delta ferroelectric thin films
Ceramics International, 2016, 42: 17162-17167.Zhou W L, Deng H M, Yang P X, Chu J H
Investigation of microstructural and optical properties of (K,Ba)(Ni,Nb)O3-delta thin films fabricated by pulsed laser deposition
Materials Letters, 2016, 181: 178-181.Journal ArticleZhou W, Deng H, Yang P, Chu J H
Designing tunable band-gap and magnetization at room-temperature in Pb(Ti1-xMx)O3-delta(M= Ni and Pd) thin films
Materials Letters, 2016, 185: 323-326.Journal ArticleZheng T, Deng H M, Zhou W L, Zhai X Z, Cao H Y, Yu L, Yang P X, Chu J H
Bandgap modulation and magnetic switching in PbTiO3 ferroelectrics by transition elements doping
Ceramics International, 2016, 42: 6033-6038.Journal ArticleZhang Y B, Tao J H, Chen Y F, Xiong Z, Zhong M, Feng Z Q, Yang P X, Chu J H
A large-volume manufacturing of multi-crystalline silicon solar cells with 18.8% efficiency incorporating practical advanced technologies
Rsc Advances, 2016, 6: 58046-58054.Journal ArticleZhang X L, Zhang J Z, Xu G S, Jiang K, Hu Z G, Chu J H
Optical evidences for an intermediate phase in relaxor ferroelectric Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystals
Aip Advances, 2016, 6: 025106.Journal ArticleZhang P, Li M, Deng Q, Zhang J, Wu J, Hu Z, Chu J H
Spectral assignments in the infrared absorption region and anomalous thermal hysteresis in the interband electronic transition of vanadium dioxide films
Phys Chem Chem Phys, 2016, 18: 6239-6246.Journal ArticleZhang J Z, Jiang K, Zhou Z Y, Hu Z G, Wang G S, Dong X L, Chu J H
Lattice Dynamics, Dielectric Constants, and Phase Diagram of Bismuth Layered Ferroelectric Bi3Ti1-xWxNbO9+ Ceramics
Journal of the American Ceramic Society, 2016, 99: 3610-3615.Journal ArticleZhang J Z, Jiang K, Hu Z G, Chu J H
A novel technique for probing phase transitions in ferroelectric functional materials: Condensed matter spectroscopy
Science China-Technological Sciences, 2016, 59: 1537-1548.Journal ArticleZhang H B, Qi R J, Ding N F, Huang R, Sun L, Duan C G, Fisher C A J, Chu J H, Ikuhara Y
Elemental intermixing within an ultrathin SrRuO3 electrode layer in epitaxial heterostructure BaTiO3/SrRuO3/SrTiO3
Aip Advances, 2016, 6: 015010.Journal ArticleYu L, Deng H M, Zhou W L, Zhang Q, Yang P X, Chu J H
Effects of (Sm, Mn and Ni) co-doping on structural, optical and magnetic properties of BiFeO3 thin films fabricated by a sol-gel technique
Materials Letters, 2016, 170: 85-88.Journal ArticleYu L, Deng H M, Zhou W L, Cao H Y, Zheng T, Yang P X, Chu J H
Modified structure and optical properties of multiferroic Pb(Zr0.53Ti0.47)(x)(Fe0.5Nb0.5)((1-x))O-3 ceramics
Ceramics International, 2016, 42: 917-922.Journal ArticleYu L, Deng H, Zhou W, Cao H, Zhai X, Yang P, Chu J H
Influence of B site-cations on phase transition, magnetic switching and band-gap modulation in Pb(B′0.5B″0.5)O3–Pb(Zr0.53Ti0.47)O3 ceramics
Ceramics International, 2016, 43: 2372-2378.Journal ArticleYin W H, Chen C, Bai W, Yang J, Zhang Y Y, Tang X D, Duan C G, Chu J H
Dielectric behavior dependence on temperature and Cr-doping contents of Aurivillius Bi5Ti3FeO15 ceramics
Ceramics International, 2016, 42: 4298-4305.Journal ArticleXu Z, Deng Q L, Zhang P, Zhang J Z, Li Y W, Hu Z G, Chu J H
Concentration and temperature dependent double energy gap characteristic properties of hexagonal YMnO3-xBiFeO(3) films
Journal of Physics D-Applied Physics, 2016, 49: 465302.Journal ArticleWu G, Wang X, Wang P, Huang H, Chen Y, Sun S, Shen H, Lin T, Wang J, Zhang S, Bian L, Sun J, Meng X, Chu JH
Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer
Nanotechnology, 2016, 27: 364002.Journal ArticleWang X D, Tang M H, Chen Y, Wu G J, Huang H, Zhao X L, Tian B B, Wang J L, Sun S, Shen H, Lin T, Sun J L, Meng X J, Chu J H
Flexible graphene field effect transistor with ferroelectric polymer gate
Optical and Quantum Electronics, 2016, 48: 345.Journal ArticleWang X, Guo H, Wang L, Yue F, Jing C, Chu J H
Preparation and transmission characteristics of a mid-infrared attenuated total reflection hollow waveguide based on a stainless steel capillary tube
Appl Opt, 2016, 55: 6404-6409.Journal ArticleWang W S, Hou Y, Zhang Z H, Zhou W, Gao Y Q, Wu J, Chu J H
The structural and optical properties of Zn-x Ni(1-x) Mn-2 O-4 films grown on Pt/Ti/SiO2/Si substrate
Journal of Infrared and Millimeter Waves, 2016, 35: 676-680.Journal ArticleWang W L, Khan K, Zhang X Y, Qin H M, Jiang J, Miao L J, Jiang K M, Wang P J, Dai M Z, Chu J H
A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors (vol 60, pg 67, 2016)
Microelectronics Reliability, 2016, 67: 159-159.Journal ArticleWang W, Khan K, Zhang X, Qin H, Jiang J, Miao L, Jiang K, Wang P, Dai M, Chu J H
A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors
Microelectronics Reliability, 2016, 60: 67-69.Journal ArticleTian B B, Wang J L, Fusil S, Liu Y, Zhao X L, Sun S, Shen H, Lin T, Sun J L, Duan C G, Bibes M, Barthelemy A, Dkhil B, Garcia V, Meng X J, Chu J H
Tunnel electroresistance through organic ferroelectrics
Nature Communications, 2016, 7: 11502Journal ArticleTao J H, Liu J F, Chen L L, Cao H Y, Meng X K, Zhang Y B, Zhang C J, Sun L, Yang P X, Chu J H
7.1% efficient co-electroplated Cu2ZnSnS4 thin film solar cells with sputtered CdS buffer layers
Green Chemistry, 2016, 18: 550-557.Journal ArticleTao J H, Chen L L, Cao H Y, Zhang C J, Liu J F, Zhang Y B, Huang L, Jiang J C, Yang P X, Chu J H
Co-electrodeposited Cu2ZnSnS4 thin-film solar cells with over 7% efficiency fabricated via fine-tuning of the Zn content in absorber layers
Journal of Materials Chemistry A, 2016, 4: 3798-3805.Journal ArticleTang K, Zhu X T, Zhu L Q, Bai W, Bai J W, Dong W X, Yang J, Zhang Y Y, Chen Y, Tang X D, Chu J H
Stoichiometry dependence of the optical and minority -carrier lifetime behaviors of CdTe epitaxial films: A low -temperature and time-resolved photoluminescence study
Applied Surface Science, 2016, 387: 477-482.Journal ArticleTang K, Zhu X T, Bai W, Zhu L Q, Bai J W, Dong W X, Yang J, Zhang Y Y, Tang X D, Chu J H
Molecular beam epitaxial growth and optical properties of the CdTe thin films on highly mismatched SrTiO3 substrates
Journal of Alloys and Compounds, 2016, 685: 370-375.Journal ArticleSun L, Ma J H, Yao N J, Huang Z M, Chu J H
Copper content dependence of electrical properties and Raman spectra of Se-deficient Cu(In,Ga)Se-2 thin films for solar cells
Journal of Materials Science-Materials in Electronics, 2016, 27: 9124-9130.Journal ArticleSun L, Lv M, Liu X, Xu Y, Wang R, Lin T, Yu G, Dai N, Chu J H
Zeeman splitting and spin-orbit interaction in Hg1-xCdxTe inversion layers
Epl, 2016, 115: 17007Journal ArticlePeng L, Jiang K, Zhang J Z, Hu Z G, Wang G S, Dong X L, Chu J H
Temperature-dependent phonon Raman scattering and spectroscopic ellipsometry of pure and Ca-doped SrxBa1-xNb2O6 ferroelectric ceramics across the phase transition region
Journal of Physics D-Applied Physics, 2016, 49: 035307.Journal ArticleMeng X K, Deng H M, Tao J H, Cao H Y, Li X R, Sun L, Yang P X, Chu J H
Heating rate tuning in structure, morphology and electricity properties of Cu2FeSnS4 thin films prepared by sulfurization of metallic precursors
Journal of Alloys and Compounds, 2016, 680: 446-451.Journal ArticleLv M, Wang R, Wei L M, Yu G L, Lin T, Dai N, Chu J H, Lockwood D J
Strained HgTe plates grown on SrTiO3 investigated by micro-Raman mapping
Journal of Applied Physics, 2016, 120: 115304.Journal ArticleLuo M, Shen Y H, Chu J H
First-principles study of the magnetism of Ni-doped MoS2 monolayer
Japanese Journal of Applied Physics, 2016, 55: 093001.Journal ArticleLiu B L, Tian B B, Zhao X L, Wang J L, Sun S, Shen H, Sun J L, Meng X J, Chu J H
Asymmetric capacitance-voltage curves induced by pinned interface dipoles in poly(vinylidene fluoride/trifluoroethylene) capacitor
Journal of Infrared and Millimeter Waves, 2016, 35: 143-146.Journal ArticleLi Y W, Qiao Q, Dong Z, Zhang J Z, Hu Z G, Chu J H
Enhanced dielectric properties in bismuth-doped alumina films prepared by atomic layer deposition
Journal of Non-Crystalline Solids, 2016, 443: 17-22.Journal ArticleLi X R, Wang J Y, Zhang J Z, Li Y W, Hu Z G, Chu J H
Spin-manipulated phonon dynamics during magnetic phase transitions in triangular lattice antiferromagnet CuCr1-xMgxO2 semiconductor films
Rsc Advances, 2016, 6: 27136-27142.Journal ArticleLi M J, Xu L P, Shi K, Zhang J Z, Chen X F, Hu Z G, Dong X L, Chu J H
Interband electronic transitions and phase diagram of PbZr1-xTixO3 (0.05 <= x <= 0.70) ceramics: ellipsometric experiment and first-principles theory
Journal of Physics D-Applied Physics, 2016, 49: 275305.Journal ArticleLi G F, Ma G H, Ma H, Chu F H, Cui H Y, Liu W J, Song X J, Jiang Y H, Huang Z M, Chu J H
Photocarrier dynamics in zinc selenide studied with optical-pump terahertz-probe spectroscopy
Acta Physica Sinica, 2016, 65: 247201.Journal ArticleLi C Q, Zhang J Z, Xu L P, Zhu J J, Duan Z H, Hu Z G, Chu J H
Temperature dependent optical dispersion and electronic transitions of highly a-axis oriented 0.8Pb(Zn1/3Nb2/3)O-3-0.2PbTiO(3) films on SrTiO3 crystals: An ellipsometric evidence
Thin Solid Films, 2016, 603: 14-20.Journal ArticleJiang K, Zhang P, Zhang J Z, Xu G S, Li W W, Hu Z G, Chu J H
Relationship between negative thermal expansion and lattice dynamics in a tetragonal PbTiO3-Bi(Mg1/2Ti1/2)O-3 perovskite single crystal
Rsc Advances, 2016, 6: 3159-3164.Journal ArticleHuang Z, Zhou W, Tong J, Huang J, Ouyang C, Qu Y, Wu J, Gao Y, Chu J H
Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection
Adv Mater, 2016, 28: 112-117.Journal ArticleHuang Z, Zhou W, Huang J, Wu J, Gao Y, Qu Y, Chu J H
Directly tailoring photon-electron coupling for sensitive photoconductance
Sci Rep, 2016, 6: 22938.Journal ArticleHuang T, Zhang P, Xu L P, Chen C, Zhang J Z, Hu Z G, Luo H S, Chu J H
Electronic structures and abnormal phonon behaviors of cobalt-modified Na0.5Bi0.5TiO3-6% BaTiO3 single crystals
Aip Advances, 2016, 6: 105311.Journal ArticleHuang H, Wang X D, Wang P, Wu G J, Chen Y, Meng C M, Liao L, Wang J L, Hu W D, Shen H, Lin T, Sun J L, Meng X J, Chen X S, Chu J H
Ferroelectric polymer tuned two dimensional layered MoTe2 photodetector
Rsc Advances, 2016, 6: 87416-87421.Journal ArticleHuang H, Wang J, Hu W, Liao L, Wang P, Wang X, Gong F, Chen Y, Wu G, Luo W, Shen H, Lin T, Sun J, Meng X, Chen X, Chu J H
Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect
Nanotechnology, 2016, 27: 445201.Journal ArticleGuo Y X, Cheng W J, Jiang J C, Zuo S H, Shi F W, Chu J H
The structural, morphological and optical-electrical characteristic of Cu2XSnS4 (X:Cu,Mg) thin films fabricated by novel ultrasonic co-spray pyrolysis
Materials Letters, 2016, 172: 68-71.Journal ArticleGuo Y X, Cheng W J, Jiang J C, Zuo S H, Shi F W, Chu J H
The effect of Cu/Mo bi-layer film on the structural, morphological and electro-optical characteristics of AZO/metal/AZO transparent conductive film
Vacuum, 2016, 131: 164-169.Journal ArticleGuo Y X, Cheng W J, Jiang J C, Chu J H
The effect of substrate temperature, Cu/Sn ratio and post-annealing on the phase-change and properties of Cu2SnS3 film deposited by ultrasonic spray pyrolysis
Journal of Materials Science-Materials in Electronics, 2016, 27: 4636-4646.Journal ArticleGuo S, Xu L, Zhang J, Hu Z, Li T, Wu L, Song Z, Chu J H
Enhanced Crystallization Behaviors of Silicon-Doped Sb2Te Films: Optical Evidences
Sci Rep, 2016, 6: 33639.Journal ArticleGuo S, Huang T, Xu L P, Shi K, Zhang J Z, Ji X L, Hu Z G, Wu L C, Song Z T, Chu J H
Observation of an intermediate phase in tungsten doped Sb2Te phase change thin films by temperature dependent measurements of structural, optical, and electronic properties
Journal of Physics D-Applied Physics, 2016, 49: 265105.Journal ArticleGuo H, Wang X, Wang L, Yang P, Jing C, Chu J H
Design,fabrication and characterization of titanium metallic hollow fiber organic perovskite solar cells
Journal of Optoelectronics·Laser, 2016, 27: 1163-1168.Journal ArticleGong S J, Cai J, Yao Q F, Tong W Y, Wan X G, Duan C G, Chu J H
Orbital control of Rashba spin orbit coupling in noble metal surfaces
Journal of Applied Physics, 2016, 119: 125310.Journal ArticleGe J, Yu Y, Ke W, Li J, Tan X, Wang Z, Chu J H, Yan Y
Improved Performance of Electroplated CZTS Thin-Film Solar Cells with Bifacial Configuration
Chemsuschem, 2016, 9: 2149-2158.Journal ArticleDong Y C, He J, Li X R, Chen Y, Sun L, Yang P X, Chu J H
Study on the preheating duration of Cu2SnS3 thin films using RF magnetron sputtering technique for photovoltaics
Journal of Alloys and Compounds, 2016, 665: 69-75.Journal ArticleDong Y, Shen P, Li X, Chen Y, Sun L, Yang P, Chu J H
Comparative study of the structural and optical properties of Cu2SnX3 and Cu2ZnSnX4 (X = S, Se) thin films and optoelectronic devices
Materials Research Express, 2016, 3: 116411Journal ArticleDing X J, Guo S, Hu Z G, Chen X F, Wang G S, Dong X L, Chu J H
The intermediate phase and low wavenumber phonon modes in antiferroelectric (Pb0.97La0.02) (Zr0.60Sn0.40-yTiy)O-3 ceramics discovered from temperature dependent Raman spectra
Journal of Alloys and Compounds, 2016, 667: 310-316.Journal ArticleDai M, Khan K, Zhang S, Jiang K, Zhang X, Wang W, Liang L, Cao H, Wang P, Wang P, Miao L, Qin H, Jiang J, Xue L, Chu J H
A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy
Scientific Reports, 2016, 6: 24096Journal ArticleCui L J, Zeng Y P, Zhang Y, Zhou W Z, Shang L Y, Lin T, Chu J H
Beating patterns in the Shubnikov-de Haas oscillations originated from spin splitting in In0.52Al0.48As/In0.65Ga0.35As heterostructures: Experiment and calculation
Physica E-Low-Dimensional Systems & Nanostructures, 2016, 83: 114-118.Journal ArticleCui J Y, Yang P X, Chu J H
Influence of Ce and Ni co-doping on structural, optical and magnetic properties of BiFeO3 thin films
Journal of Infrared and Millimeter Waves, 2016, 35: 322.Journal ArticleChen Y, Wang X, Wang P, Huang H, Wu G, Tian B, Hong Z, Wang Y, Sun S, Shen H, Wang J, Hu W, Sun J, Meng X, Chu J H
Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer
ACS Appl Mater Interfaces, 2016, 8: 32083-32088.Journal ArticleChen L L, Deng H M, Tao J H, Cao H Y, Sun L, Yang P X, Chu J H
Strategic improvement of Cu2MnSnS4 films by two distinct post annealing processes for constructing thin film solar cells
Acta Materialia, 2016, 109: 1-7.Journal ArticleChen C, Song K, Bai W, Yang J, Zhang Y Y, Xiang P H, Qin M Y, Tang X D, Chu J H
Effect of Nb and more Fe ions co-doping on the microstructures, magnetic, and piezoelectric properties of Aurivillius Bi5Ti3FeO15 phases
Journal of Applied Physics, 2016, 120: 214104.Journal ArticleCao H Y, Deng H M, Chen L L, Tao J H, Meng X K, Liu J, Yue F Y, Sun L, Yang P X, Chu J H
Antimony-induced grain growth and properties modification of Cu(In, Al)Se-2 thin films fabricated by selenization of sputtered stacked precursors
Journal of Alloys and Compounds, 2016, 689: 21-29.Journal ArticleBai W, Chen C, Tang K, Yang J, Tang X, Chu J H
Sintering, Structural and Optical Properties of Aurivillius Bi4LaTi3TMO15 (TM = Co, Cr, Fe, Mn and Ni) Ceramics
Ferroelectrics, 2016, 492: 109-116.Journal ArticleFang, Hehai; Hu, Weida; Wang, Peng; Guo, Nan; Luo, Wenjin; Zheng, Dingshan; Gong, Fan; Luo, Man; Tian, Hongzheng; Zhang, Xutao; Luo, Chen; Wu, Xing; Chen, Pingping; Liao, Lei; Pan, Anlian; Chen, Xiaoshuang; Lu, Wei
Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire
In: Nano Letters, vol. 16, no. 10, pp. 6416-6424, 2016, ISSN: 1530-6984.@article{RN64, title = {Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire}, author = {Hehai Fang and Weida Hu and Peng Wang and Nan Guo and Wenjin Luo and Dingshan Zheng and Fan Gong and Man Luo and Hongzheng Tian and Xutao Zhang and Chen Luo and Xing Wu and Pingping Chen and Lei Liao and Anlian Pan and Xiaoshuang Chen and Wei Lu}, doi = {10.1021/acs.nanolett.6b02860}, issn = {1530-6984}, year = {2016}, date = {2016-01-01}, urldate = {2016-01-01}, journal = {Nano Letters}, volume = {16}, number = {10}, pages = {6416-6424}, keywords = {}, pubstate = {published}, tppubtype = {article} }Journal ArticleLiu, Y. W.; Yuan, X.; Zhang, C.; Jin, Z.; Narayan, A.; Luo, C.; Chen, Z. G.; Yang, L.; Zou, J.; Wu, X.; Sanvito, S.; Xia, Z. C.; Li, L.; Wang, Z.; Xiu, F. X.
Zeeman Splitting and Dynamical Mass Generation in Dirac Semimetal ZrTe5
In: Nature Communications, vol. 7, 2016, ISSN: 2041-1723.Dirac semimetals have attracted extensive attentions in recent years. It has been theoretically suggested that many-body interactions may drive exotic phase transitions, spontaneously generating a Dirac mass for the nominally massless Dirac electrons. So far, signature of interaction-driven transition has been lacking. In this work, we report high-magnetic-field transport measurements of the Dirac semimetal candidate ZrTe5. Owing to the large g factor in ZrTe5, the Zeeman splitting can be observed at magnetic field as low as 3 T. Most prominently, high pulsed magnetic field up to 60 T drives the system into the ultra-quantum limit, where we observe abrupt changes in the magnetoresistance, indicating field-induced phase transitions. This is interpreted as an interaction-induced spontaneous mass generation of the Dirac fermions, which bears resemblance to the dynamical mass generation of nucleons in high-energy physics. Our work establishes Dirac semimetals as ideal platforms for investigating emerging correlation effects in topological matters.
@article{RN63, title = {Zeeman Splitting and Dynamical Mass Generation in Dirac Semimetal ZrTe5}, author = {Y. W. Liu and X. Yuan and C. Zhang and Z. Jin and A. Narayan and C. Luo and Z. G. Chen and L. Yang and J. Zou and X. Wu and S. Sanvito and Z. C. Xia and L. Li and Z. Wang and F. X. Xiu}, doi = {10.1038/ncomms12516}, issn = {2041-1723}, year = {2016}, date = {2016-01-01}, urldate = {2016-01-01}, journal = {Nature Communications}, volume = {7}, abstract = {Dirac semimetals have attracted extensive attentions in recent years. It has been theoretically suggested that many-body interactions may drive exotic phase transitions, spontaneously generating a Dirac mass for the nominally massless Dirac electrons. So far, signature of interaction-driven transition has been lacking. In this work, we report high-magnetic-field transport measurements of the Dirac semimetal candidate ZrTe5. Owing to the large g factor in ZrTe5, the Zeeman splitting can be observed at magnetic field as low as 3 T. Most prominently, high pulsed magnetic field up to 60 T drives the system into the ultra-quantum limit, where we observe abrupt changes in the magnetoresistance, indicating field-induced phase transitions. This is interpreted as an interaction-induced spontaneous mass generation of the Dirac fermions, which bears resemblance to the dynamical mass generation of nucleons in high-energy physics. Our work establishes Dirac semimetals as ideal platforms for investigating emerging correlation effects in topological matters.}, keywords = {传感器}, pubstate = {published}, tppubtype = {article} }Journal ArticleShi, Huimin; Wang, Xuejiao; Zheng, Mengjie; Wu, Xing; Chen, Yiqin; Yang, Zhengmei; Zhang, Guanhua; Duan, Huigao
Hot-Electrons Mediated Efficient Visible-Light Photocatalysis of Hierarchical Black Au-TiO2 Nanorod Arrays on Flexible Substrate
In: Advanced Materials Interfaces, vol. 3, no. 22, 2016, ISSN: 2196-7350.@article{RN74, title = {Hot-Electrons Mediated Efficient Visible-Light Photocatalysis of Hierarchical Black Au-TiO2 Nanorod Arrays on Flexible Substrate}, author = {Huimin Shi and Xuejiao Wang and Mengjie Zheng and Xing Wu and Yiqin Chen and Zhengmei Yang and Guanhua Zhang and Huigao Duan}, doi = {10.1002/admi.201600588}, issn = {2196-7350}, year = {2016}, date = {2016-01-01}, urldate = {2016-01-01}, journal = {Advanced Materials Interfaces}, volume = {3}, number = {22}, keywords = {}, pubstate = {published}, tppubtype = {article} }Journal ArticleZheng, D. S.; Wang, J. L.; Hu, W. D.; Liao, L.; Fang, H. H.; Guo, N.; Wang, P.; Gong, F.; Wang, X. D.; Fan, Z. Y.; Wu, X.; Meng, X. J.; Chen, X. S.; Lu, W.
When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors
In: Nano Letters, vol. 16, no. 4, pp. 2548-2555, 2016, ISSN: 1530-6984.One-dimensional semiconductor nanowires (NWs) have been widely applied in photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier concentration at certain level results in appreciable dark current, which limits the detectivity of the devices. Here, we fabricated a novel type of ferroelectric-enhanced side-gated NW photodetectors. The intrinsic carriers in the NW channel can be fully depleted by the ultrahigh electrostatic field from polarization of P(VDF-TrFE) ferroelectric polymer. In this scenario, the dark current is significantly reduced and thus the sensitivity of the photodetector is increased even when the gate voltage is removed. Particularly, a single InP NW photodetector exhibits high-photoconductive gain of 4.2 x 10(5), responsivity of 2.8 x 10(5) A W-1, and specific detectivity (D*) of 9.1 x 10(15) Jones at lambda = 830 nm. To further demonstrate the universality of the configuration we also demonstrate ferroelectric polymer side-gated single CdS NW photodetectors with ultrahigh photoconductive gain of 1.2 x 10(7), responsivity of 5.2 x 10(6) A W-1 and D* up to 1.7 x 10(18) Jones at lambda = 520 nm. Overall, our work demonstrates a new approach to fabricate a controllable, full-depleted, and high-performance NW photodetector. This can inspire novel device structure design of high-performance optoelectronic devices based on semiconductor NWs.
@article{RN59, title = {When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors}, author = {D. S. Zheng and J. L. Wang and W. D. Hu and L. Liao and H. H. Fang and N. Guo and P. Wang and F. Gong and X. D. Wang and Z. Y. Fan and X. Wu and X. J. Meng and X. S. Chen and W. Lu}, doi = {10.1021/acs.nanolett.6b00104}, issn = {1530-6984}, year = {2016}, date = {2016-01-01}, urldate = {2016-01-01}, journal = {Nano Letters}, volume = {16}, number = {4}, pages = {2548-2555}, abstract = {One-dimensional semiconductor nanowires (NWs) have been widely applied in photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier concentration at certain level results in appreciable dark current, which limits the detectivity of the devices. Here, we fabricated a novel type of ferroelectric-enhanced side-gated NW photodetectors. The intrinsic carriers in the NW channel can be fully depleted by the ultrahigh electrostatic field from polarization of P(VDF-TrFE) ferroelectric polymer. In this scenario, the dark current is significantly reduced and thus the sensitivity of the photodetector is increased even when the gate voltage is removed. Particularly, a single InP NW photodetector exhibits high-photoconductive gain of 4.2 x 10(5), responsivity of 2.8 x 10(5) A W-1, and specific detectivity (D*) of 9.1 x 10(15) Jones at lambda = 830 nm. To further demonstrate the universality of the configuration we also demonstrate ferroelectric polymer side-gated single CdS NW photodetectors with ultrahigh photoconductive gain of 1.2 x 10(7), responsivity of 5.2 x 10(6) A W-1 and D* up to 1.7 x 10(18) Jones at lambda = 520 nm. Overall, our work demonstrates a new approach to fabricate a controllable, full-depleted, and high-performance NW photodetector. This can inspire novel device structure design of high-performance optoelectronic devices based on semiconductor NWs.}, keywords = {传感器}, pubstate = {published}, tppubtype = {article} }Journal ArticleZhu, L. S.; Zhang, J.; Xu, X. W.; Yu, Y. Z.; Wu, X.; Yang, T.; Wang, X. H.
Room Temperature H-2 Detection Based on Pd/SiNWs/p-Si Schottky Diode Structure
In: Sensors and Actuators B-Chemical, vol. 227, pp. 515-523, 2016, ISSN: 0925-4005.@article{RN60, title = {Room Temperature H-2 Detection Based on Pd/SiNWs/p-Si Schottky Diode Structure}, author = {L. S. Zhu and J. Zhang and X. W. Xu and Y. Z. Yu and X. Wu and T. Yang and X. H. Wang}, doi = {10.1016/j.snb.2015.12.080}, issn = {0925-4005}, year = {2016}, date = {2016-01-01}, urldate = {2016-01-01}, journal = {Sensors and Actuators B-Chemical}, volume = {227}, pages = {515-523}, keywords = {传感器}, pubstate = {published}, tppubtype = {article} }@article{RN60, title = {Room Temperature H-2 Detection Based on Pd/SiNWs/p-Si Schottky Diode Structure}, author = {L. S. Zhu and J. Zhang and X. W. Xu and Y. Z. Yu and X. Wu and T. Yang and X. H. Wang}, doi = {10.1016/j.snb.2015.12.080}, issn = {0925-4005}, year = {2016}, date = {2016-01-01}, urldate = {2016-01-01}, journal = {Sensors and Actuators B-Chemical}, volume = {227}, pages = {515-523}, keywords = {传感器}, pubstate = {published}, tppubtype = {article} }
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2015
Journal ArticleZou Y H, Han L, Yuan G L, Wang J L, Sun S, Sun J L, Meng X J, Chu J H
Bent Deformation's Impact on Ferroelectric and Pyroelectric Properties of the P(VDF-TrFE) Thin Films
Ferroelectrics, 2015, 488: 154-161.Journal ArticleZhu Z, Chu J H
Approximate analytical channel potential model of poly-Si thin film transistors operated in the strong inversion region under the high gate and low drain biases
Journal of Physics: Conference Series, 2015, 574: 012100.Journal ArticleZhu L Q, Shao J, Zhu L, Chen X R, Qi Z, Lin T, Bai W, Tang X D, Chu J H
Influence of local magnetization on acceptor-bound complex state in Hg1-xMnxTe single crystals
Journal of Applied Physics, 2015, 118: 045707.Journal ArticleZhu J-J, Zhang J-Z, Xu G-S, Zhang X-L, Yu W-L, Hu Z-G, Chu J H
UV-Vis-NIR optical properties of Pb(Mg-1/3 Nb-2/3) O-3-0. 3PbTiO(3) single crystal
Journal of Infrared and Millimeter Waves, 2015, 34: 442-446.Journal ArticleZhu J J, Zhang J Z, Xu G S, Zhang X L, Hu Z G, Chu J H
Phonon modes and local polar distortions in nanoclusters of Pb(In1/2Nb1/2) O-3-Pb(Mg1/3Nb2/3) O-3-PbTiO3 crystals probed by terahertz reflectance spectra and Raman scattering
Laser Physics Letters, 2015, 12: 056103.Journal ArticleZhou W L, Deng H M, Yu L, Yang P X, Chu J H
Magnetism switching and band-gap narrowing in Ni-doped PbTiO3 thin films
Journal of Applied Physics, 2015, 117: 194102.Journal ArticleZhou W L, Deng H M, Yu L, Yang P X, Chu J H
Band-gap narrowing and magnetic behavior of Ni-doped Ba(Ti0.875Ce0.125)O-3 thin films
Journal of Physics D-Applied Physics, 2015, 48: 455308.Journal ArticleZhou W L, Deng H M, Ding N F, Yu L, Yue F Y, Yang P X, Chu J H
Microstructure tuning and magnetism switching of ferroelectric barium titanate
Materials Characterization, 2015, 107: 1-6.Journal ArticleZhou W L, Deng H M, Cao H Y, He J, Liu J, Yang P X, Chu J H
Effects of Sm and Mn co-doping on structural, optical and magnetic properties of BiFeO3 films prepared by a sol-gel technique
Materials Letters, 2015, 144: 93-96.Journal ArticleZhou W, Deng H, Yu L, Yang P, Chu J H
Optical band-gap narrowing in perovskite ferroelectric ABO(3) ceramics (A=Pb, Ba; B=Ti) by ion substitution technique
Ceramics International, 2015, 41: 13389-13392.Journal ArticleZhong N, Xiang P H, Zhang Y Y, Wu X, Tang X D, Yang P X, Duan C G, Chu J H
Polarization fluctuation behavior of lanthanum substituted Bi4Ti3O12 thin films
Journal of Applied Physics, 2015, 118: 104102.Journal ArticleZhao X L, Zhang Y, Wang J L, Zhan Q F, Wang X D, Huang H, Tian B B, Lin T, Sun S, Tian L, Han L, Sun J L, Meng X J, Chu J H
Ferroelectric control of magnetism in P(VDF-TrFE)/Co heterostructure
Journal of Materials Science-Materials in Electronics, 2015, 26: 7502-7506.Journal ArticleZhao X L, Wang J L, Tian B B, Liu B L, Wang X D, Huang H, Zou Y H, Sun S, Lin T, Han L, Sun J L, Meng X J, Chu J H
High temperature coefficient of resistance for a ferroelectric tunnel junction
Applied Physics Letters, 2015, 107: 062904.Journal ArticleZhao X L, Wang J L, Liu B L, Wang X D, Huang H, Lin T, Sun S H, Han L, Sun J L, Meng X J, Chu J H
Properties of Tunability and Stored Energy Density in the Ferroelectric Multilayers
Ferroelectrics, 2015, 488: 112-118.Journal ArticleZhao X G, Chu J H, Tang Z
Magnetic Properties, Heisenberg Exchange Interaction, and Curie Temperature of CdS Nanoclusters
Journal of Physical Chemistry C, 2015, 119: 29071-29075.Journal ArticleZhang Y B, Xu J M, Mao J, Tao J H, Shen H, Chen Y F, Feng Z Q, Verlinden P J, Yang P X, Chu J H
Long-term reliability of silicon wafer-based traditional backsheet modules and double glass modules
Rsc Advances, 2015, 5: 65768-65774.Journal ArticleZhang X L, Zhu J J, Xu G S, Zhang J Z, Xu L P, Hu Z G, Chu J H
Temperature dependent spectroscopic ellipsometry and Raman scattering of PbTiO3-based relaxor ferroelectric single crystals around MPB region
Optical Materials Express, 2015, 5: 2478-2490.Journal ArticleZhang X B, Xiong Z, Chen Y F, Feng Z Q, Yang P X, Chu J H
Correlation between polycrystalline based solar cell conversion efficiency and crystallization defects
Journal of Infrared and Millimeter Waves, 2015, 34: 551-+.Journal ArticleZhang P, Jiang K, Deng Q L, You Q H, Zhang J Z, Wu J D, Hu Z G, Chu J H
Manipulations from oxygen partial pressure on the higher energy electronic transition and dielectric function of VO2 films during a metal-insulator transition process
Journal of Materials Chemistry C, 2015, 3: 5033-5040.Journal ArticleZhang P, Huang T, You Q H, Zhang J Z, Li W W, Wu J D, Hu Z G, Chu J H
Effects of crystal orientation on electronic band structure and anomalous shift of higher critical point in VO2 thin films during the phase transition process
Journal of Physics D-Applied Physics, 2015, 48: 485302.Journal ArticleZhang K Z, He J, Wang W J, Sun L, Yang P X, Chu J H
Cu2ZnSnS4 films fabricated by a simple sol-gel process without sulfurization
Journal of Infrared and Millimeter Waves, 2015, 34: 129-133.Journal ArticleZhang J Z, Zhu J J, Deng Q L, Yu W L, Li Y W, Hu Z G, Meng X J, Chu J H
The optical properties of La doped BiGaO3 polycrystalline films
Journal of Infrared and Millimeter Waves, 2015, 34: 447-451.Journal ArticleZhang J Z, Tong W Y, Zhu J J, Xu J Y, Duan Z H, Xu L P, Hu Z G, Duan C G, Meng X J, Zhu Z Q, Chu J H
Temperature-dependent lattice dynamics and electronic transitions in 0.93Pb(Zn1/3Nb2/3)O-3-0.07PbTiO(3) single crystals: Experiment and theory
Physical Review B, 2015, 91: 085201.Journal ArticleZhang J, Deng H M, He J, Meng X K, Liu T T, Sun L, Yang P X, Chu J H
Structural and electrical properties of CuIn1-xAlxSe2 thin films prepared by radio-frequency magnetron sputtering process
Applied Surface Science, 2015, 326: 211-215.Journal ArticleZhai X Z, Deng H M, Zhou W L, Yang P X, Chu J H, Zheng Z
Optical and magnetic properties of KBiFe2O5 thin films fabricated by chemical solution deposition
Materials Letters, 2015, 161: 423-426.Journal ArticleZhai X Z, Deng H M, Zhou W L, Yang P X, Chu J H, Zheng Z
Structural, optical and magnetic tunability in KBiFe2O5 multiferroics
Rsc Advances, 2015, 5: 82351-82356.Journal ArticleZhai X Z, Deng H M, Zhou W L, Yang P X, Chu J H
Strain-induced structural phase transition, ferromagnetic and optical properties of Bi1-xTbxFeO3 thin films
Journal of Physics D-Applied Physics, 2015, 48: 385002.Journal ArticleZhai X Z, Deng H M, Yang P X, Chu J H
Effect of Tb-doping on structural, magnetic and optical properties of BiFeO3 films prepared by chemical solution deposition
Materials Letters, 2015, 158: 266-268.Journal ArticleYue F Y, Tomm J W, Kruschke D, Ullrich B, Chu J H
Temperature dependence of the fundamental excitonic resonance in lead-salt quantum dots
Applied Physics Letters, 2015, 107: 022106.Journal ArticleXu Y-G, Lv M, Chen J-X, Lin T, Yu G-L, Dai N, Chu J H
Zero-field spin splitting and high-field g-factor of an asymmetrical In0.53Ga0.47As/In0.52Al0.48 As quantum well
Journal of Infrared and Millimeter Waves, 2015, 34: 688-693.Journal ArticleXu W F, Yang J, Bai W, Zhang Y Y, Tang K, Duan C G, Tang X D, Chu J H
Effects of aluminum substitution on the crystal structure and magnetic properties in Zn2Y-type hexaferrites
Journal of Applied Physics, 2015, 117: 17d909.Journal ArticleXu L P, Jiang K, Zhang J Z, Xu G S, Hu Z G, Chu J H
Phase transitions and thermotropic phase boundaries in MnO2-doped (K0.5Na0.5)NbO3-0.05LiNbO(3) single crystals: Raman scattering evidence at elevated temperatures
Applied Physics Letters, 2015, 106: 122901.Journal ArticleXing S M, Shan C, Jiang K, Zhu J J, Li Y W, Hu Z G, Chu J H
Optoelectronic properties and interband transition of La-doped BaSnO3 transparent conducting films determined by variable temperature spectral transmittance
Journal of Applied Physics, 2015, 117: 103107.Journal ArticleWu J, Ouyang C, Zhou W, Gao Y Q, Hou Y, Huang Z M, Chu J H
Optical properties of small polaron in Mn1.56Co0.96Ni0.48O4 films investigated by temperature-dependent transmission spectra
Materials Research Express, 2015, 2: 026301.Journal ArticleWenliang Z, Hongmei D, Jun H, Jian L, Huiyi C, Xuezhen Z, Pingxiong Y, Chu J H
Effects of Sm and Mn Co-Doping on Structural and Optical Properties of BiFeO3 Thin Films Prepared by Sol-Gel Technique
Materials Science Forum, 2015, 815: 149-153.Journal ArticleWang X, Wang P, Wang J, Hu W, Zhou X, Guo N, Huang H, Sun S, Shen H, Lin T, Tang M, Liao L, Jiang A, Sun J, Meng X, Chen X, Lu W, Chu J H
Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics
Advanced Materials, 2015, 27: 6575.Journal ArticleTian L, Sun J L, Wang J L, Meng X J, Chu J H
The performance of the free-standing P(VDF-TrFE) infrared detector
Journal of Infrared and Millimeter Waves, 2015, 34: 654-657.Journal ArticleTian L, Sun J L, Wang J L, Meng X J, Chu J H
Diffuse Phase Transition and Relaxor-Like Behavior in P(VDF-TrFE-CFE) Films Irradiated with Different Electron Dose
Ferroelectrics, 2015, 488: 140-147.Journal ArticleTian L, Meng X J, Yang J, Sun J L, Wang J L, Chu J H
Effects of Electron Irradiation on the Dielectric Behavior of Langmuir-Blodgett Terpolymer Films
Ferroelectrics, 2015, 478: 81-87.Journal ArticleTian B B, Liu Y, Chen L F, Wang J L, Sun S, Shen H, Sun J L, Yuan G L, Fusil S, Garcia V, Dkhil B, Meng X J, Chu J H
Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors
Sci Rep, 2015, 5: 18297.Journal ArticleTian B B, Chen L F, Liu Y, Bai X F, Wang J L, Sun S, Yuan G L, Sun J L, Dkhil B, Meng X J, Chu J H
Homogeneous switching mechanism in pure polyvinylidene fluoride ultrathin films
Physical Review B, 2015, 92: 060102.Journal ArticleTian B B, Bai X F, Liu Y, Gemeiner P, Zhao X L, Liu B L, Zou Y H, Wang X D, Huang H, Wang J L, Sun S, Sun J L, Dkhil B, Meng X J, Chu J H
beta phase instability in poly(vinylidene fluoride/trifluoroethylene) thin films near beta relaxation temperature
Applied Physics Letters, 2015, 106: 092902.Journal ArticleTao J, Zhang K, Zhang C, Chen L, Cao H, Liu J, Jiang J, Sun L, Yang P, Chu J H
A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency
Chem Commun (Camb), 2015, 51: 10337-10340.Journal ArticleTang K, Bai W, Liu J, Yang J, Zhang Y Y, Duan C G, Tang X D, Chu J H
The effect of Mn doping contents on the structural, dielectric and magnetic properties of multifenoic Bi5Ti3FeO15 Aurivillius ceramics
Ceramics International, 2015, 41: S185-S190.Journal ArticleShi K, Peng L, Li M J, Zhou Z Y, Jiang K, Zhang J Z, Hu Z G, Dong X L, Chu J H
Structural distortion, phonon behavior and electronic transition of Aurivillius layered ferroelectric CaBi2Nb2-xWxO9 ceramics
Journal of Alloys and Compounds, 2015, 653: 168-174.Journal ArticleMeng X K, Deng H M, Zhang J, Zhou W L, Tao J H, Sun L, Yue F Y, Yang P X, Chu J H
Structural and optical tunability by reaction time of selenization in Cu2FeSnSe4 thin films
Journal of Alloys and Compounds, 2015, 646: 68-72.Journal ArticleMeng X K, Deng H M, Sun L, Yang P X, Chu J H
Sulfurization temperature dependence of the structural transition in Cu2FeSnS4-based thin films
Materials Letters, 2015, 161: 427-430.Journal ArticleMeng X K, Deng H M, He J, Sun L, Yang P X, Chu J H
Synthesis, structure, optics and electrical properties of Cu2FeSnS4 thin film by sputtering metallic precursor combined with rapid thermal annealing sulfurization process
Materials Letters, 2015, 151: 61-63.Journal ArticleMeng X K, Cao H Y, Deng H M, Zhou W L, Zhang J, Huang L, Sun L, Yang P X, Chu J H
Structural, optical and electrical properties of Cu2FeSnSe4 and Cu(In,Al)Se-2 thin films
Materials Science in Semiconductor Processing, 2015, 39: 243-250.Journal ArticleMeng X K, Cao H Y, Deng H M, Zhou W L, Tao J H, Sun L, Yue F Y, Yang P X, Chu J H
Synthesis and characterization of Cu-based selenide photovoltaic materials: Cu2FeSnSe4 and Cu(In, Al)Se-2
Journal of Alloys and Compounds, 2015, 644: 354-362.Journal ArticleLv M, Yu G L, Xu Y G, Chang Z G, Lin T, Zhao D G, Dai N, Chu J H, Lockwood D J
Dependence of spin dynamics on in-plane magnetic field in AlGaN/GaN quantum wells
Epl, 2015, 112: 67003.Journal ArticleLv M, Wang H, Xu Y G, Yu G L, Zhang H H, Lin T, Hu G J, Dai N, Chu J H
Long phase coherence length and anisotropic magnetoresistance in MgZnO thin film
Journal of Applied Physics, 2015, 117: 155304.Journal ArticleLiu T T, Deng H M, Cao H Y, Zhou W L, Zhang J, Liu J, Yang P X, Chu J H
Structural, optical and electrical properties of Sb2Te3 films prepared by pulsed laser deposition
Journal of Crystal Growth, 2015, 416: 78-81.Journal ArticleLiu J, Deng H M, Zhai X Z, Cao H Y, Yang P X, Chu J H
Influence of Eu doping on structural and optical properties of BiFeO3 films deposited on quartz substrates by pulsed laser deposition method
Journal of Materials Science-Materials in Electronics, 2015, 26: 2977-2981.Journal ArticleLiu B L, Tian B B, Sun J L, Liu Y, Wang J L, Sun S, Meng X J, Chu J H
Confinement effect on coercive field in relaxor terpolymer nanowires
Applied Surface Science, 2015, 355: 473-476.Journal ArticleLi Y W, Qiao Q, Zhang J Z, Hu Z G, Chu J H
Influence of post-annealing on structural, electrical and optical properties of manganese oxide thin films grown by atomic layer deposition
Thin Solid Films, 2015, 574: 115-119.Journal ArticleLi C Q, Yao Q R, Zhang J Z, Hu Z G, Wang F F, Liu A Y, Shi W Z, Chu J H
Dramatic influence of Dy3+ doping on strain and domain structure in lead-free piezoelectric 0.935(Na1/2Bi1/2)TiO3-0.065BaTiO(3) ceramics
Aip Advances, 2015, 5: 127118.Journal ArticleLi C Q, Peng L, Wang P, Jiang K, Liu A Y, Hu Z G, Chu J H
Thermotropic phase transitions in Pb1-xSrx(Al1/3Nb2/3)(0.1)(Zr0.52Ti0.48)(0.9)O-3 ceramics: Temperature dependent dielectric permittivity and Raman scattering
Aip Advances, 2015, 5: 067122.Journal ArticleJiang K, Zhao R, Zhang P, Deng Q, Zhang J, Li W, Hu Z, Yang H, Chu J H
Strain and temperature dependent absorption spectra studies for identifying the phase structure and band gap of EuTiO3 perovskite films
Phys Chem Chem Phys, 2015, 17: 31618-31623.Journal ArticleHuang Z, Zhou W, Ouyang C, Wu J, Zhang F, Huang J, Gao Y, Chu J H
High performance of Mn-Co-Ni-O spinel nanofilms sputtered from acetate precursors
Sci Rep, 2015, 5: 10899.Journal ArticleHuang T, Guo S, Xu L P, Chen C, Hu Z G, Luo H S, Chu J H
Low temperature structural variations of Na0.5Bi0.5TiO3-7% BaTiO3 single crystal: Evidences from optical ellipsometry and Raman scattering
Journal of Applied Physics, 2015, 117: 224103.Journal ArticleHuang L, Deng H M, He J, Meng X K, Tao J H, Cao H Y, Sun L, Yang P X, Chu J H
Cu content dependence of morphological, structural and optical properties for Cu2ZnGeS4 thin films synthesized by sulfurization of sputtered precursors
Materials Letters, 2015, 159: 1-4.Journal ArticleHuang L, Deng H M, He J, Meng X K, Sun L, Yang P X, Chu J H
Synthesis of Cu2ZnGeS4 thin film via sulfurization of RF magnetron sputtered precursor
Journal of Materials Science-Materials in Electronics, 2015, 26: 3984-3988.Journal ArticleHuang H, Wang P, Gao Y Q, Wang X D, Lin T, Wang J L, Liao L, Sun J L, Meng X J, Huang Z M, Chen X S, Chu J H
Highly sensitive phototransistor based on GaSe nanosheets
Applied Physics Letters, 2015, 107: 143112.Journal ArticleHe X F, Xu J, Xu X F, Gu C C, Chen F, Wu B H, Wang C R, Xing H Z, Chen X S, Chu J H
Negative capacitance switching via VO2 band gap engineering driven by electric field
Applied Physics Letters, 2015, 106: 093106.Journal ArticleHe X, Zeng Y, Xu X, Gu C, Chen F, Wu B, Wang C, Xing H, Chen X, Chu J H
Orbital change manipulation metal-insulator transition temperature in W-doped VO2
Phys Chem Chem Phys, 2015, 17: 11638-11646.Journal ArticleHe J, Sun L, Chen Y, Jiang J C, Yang P X, Chu J H
Influence of sulfurization pressure on Cu2ZnSnS4 thin films and solar cells prepared by sulfurization of metallic precursors
Journal of Power Sources, 2015, 273: 600-607.Journal ArticleGuo S, Ding X J, Zhang J Z, Hu Z G, Ji X L, Wu L C, Song Z T, Chu J H
Intrinsic evolutions of dielectric function and electronic transition in tungsten doping Ge2Sb2Te5 phase change films discovered by ellipsometry at elevated temperatures
Applied Physics Letters, 2015, 106: 052105.Journal ArticleGuo H, Liang C, Hua X, Ma H, Guo W, Jing C, Chu J H
Elastic bending radius calculation of metallic attenuated total reflection GeO_2 hollow optical fibers
Journal of Optoelectronics·Laser, 2015, 26: 392-396.Journal ArticleGe J, Chu J H, Yan Y, Jiang J, Yang P
Co-electroplated Kesterite Bifacial Thin-Film Solar Cells: A Study of Sulfurization Temperature
ACS Appl Mater Interfaces, 2015, 7: 10414-10428.Journal ArticleGe J, Chu J H, Jiang J C, Yan Y F, Yang P X
The Interfacial Reaction at ITO Back Contact in Kesterite CZTSSe Bifacial Solar Cells
Acs Sustainable Chemistry & Engineering, 2015, 3: 3043-3052.ConferenceGao Y, Huang Z, Hou Y, Wu J, Zhou W, Ouyang C, Chu J H
Infrared ellipsometric spectroscopy of Mn1.56Co0.96Ni0.48O4 thin films with different layers
2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),IEEE, Hong Kong, China, 23-28 Aug. 2015.Journal ArticleDong Y C, He J, Tao J H, Sun L, Yang P X, Chu J H
Influence of different S/Se ratio on the properties of Cu2Sn(SxSe1-x)(3) thin films fabricated by annealing stacked metal precursors
Journal of Materials Science-Materials in Electronics, 2015, 26: 6723-6729.Journal ArticleDong Y C, He J, Sun L, Chen Y, Yang P X, Chu J H
Effect of sulfurization temperature on properties of Cu2SnS3 thin films and solar cells prepared by sulfurization of stacked metallic precursors
Materials Science in Semiconductor Processing, 2015, 38: 171-176.Journal ArticleDong Y C, He J, Li X R, Zhou W L, Chen Y, Sun L, Yang P X, Chu J H
Synthesis and optimized sulfurization time of Cu2SnS3 thin films obtained from stacked metallic precursors for solar cell application
Materials Letters, 2015, 160: 468-471.Journal ArticleDeng Q L, Zhang J Z, Huang T, Xu L P, Jiang K, Li Y W, Hu Z G, Chu J H
Optoelectronic properties and polar nano-domain behavior of sol-gel derived K0.5Na0.5Nb1-xMnxO3-delta nanocrystalline films with enhanced ferroelectricity
Journal of Materials Chemistry C, 2015, 3: 8225-8234.Journal ArticleCong W T, Tang Z, Zhao X G, Chu J H
Enhanced magnetic anisotropies of single transition-metal adatoms on a defective MoS2 monolayer
Sci Rep, 2015, 5: 9361.Journal ArticleCong R, Hu G J, Yu G L, Chu J H, Dai N
Effect of polymer content on the optical properties of PbZr0.4 Ti-0.6 O-3 multilayers
Journal of Infrared and Millimeter Waves, 2015, 34: 297-300.Journal ArticleChen L L, Deng H M, Tao J H, Zhou W L, Sun L, Yue F Y, Yang P X, Chu J H
Influence of annealing temperature on structural and optical properties of Cu2MnSnS4 thin films fabricated by sol-gel
Journal of Alloys and Compounds, 2015, 640: 23-28.Journal ArticleChen L L, Deng H M, Tao J H, Cao H Y, Huang L, Sun L, Yang P X, Chu J H
Synthesis and characterization of earth-abundant Cu2MnSnS4 thin films using a non-toxic solution-based technique
Rsc Advances, 2015, 5: 84295-84302.Journal ArticleChen L L, Deng H M, Cui J Y, Tao J H, Zhou W L, Cao H Y, Sun L, Yang P X, Chu J H
Composition dependence of the structure and optical properties of Cu2MnxZn1-xSnS4 thin films
Journal of Alloys and Compounds, 2015, 627: 388-392.Journal ArticleCao H Y, Deng H M, Zhou W L, Tao J H, Chen L L, Huang L, Sun L, Yue F Y, Yang P X, Chu J H
Investigation of microstructural and optical properties of Cu(In, Al)Se-2 thin films with various copper content
Journal of Alloys and Compounds, 2015, 651: 208-213.Journal ArticleCao H Y, Deng H M, Tao J H, Zhou W L, Meng X K, Sun L, Yang P X, Chu J H
Microstructural and morphological properties of sputtered Cu(In, Al)Se-2 thin films for solar cell applications
Materials Letters, 2015, 157: 42-44.Journal ArticleCao H Y, Deng H M, Cui J Y, Meng X K, Zhnag J, Sun L, Yang P X, Chu J H
The influence of selenization temperatures on the structural and optical properties of Cu (In, Al) Se-2 thin films
Journal of Infrared and Millimeter Waves, 2015, 34: 726-730.Journal ArticleCai Z H, Narang P, Atwater H A, Chen S Y, Duan C G, Zhu Z Q, Chu J H
Cation-Mutation Design of Quaternary Nitride Semiconductors Lattice-Matched to GaN
Chemistry of Materials, 2015, 27: 7757-7764.Journal ArticleBai W, Chen C, Yang J, Zhang Y, Qi R, Huang R, Tang X, Duan C G, Chu J H
Dielectric behaviors of Aurivillius Bi5Ti3Fe0.5Cr0.5O15 multiferroic polycrystals: Determining the intrinsic magnetoelectric responses by impedance spectroscopy
Sci Rep, 2015, 5: 17846.Journal ArticleDeng, Dehui; Chen, Xiaoqi; Yu, Liang; Wu, Xing; Liu, Qingfei; Liu, Yun; Yang, Huaixin; Tian, Huanfang; Hu, Yongfeng; Du, Peipei; Si, Rui; Wang, Junhu; Cui, Xiaoju; Li, Haobo; Xiao, Jianping; Xu, Tao; Deng, Jiao; Yang, Fan; Duchesne, Paul N.; Zhang, Peng; Zhou, Jigang; Sun, Litao; Li, Jianqi; Pan, Xiulian; Bao, Xinhe
A Single Iron Site Confined in A Graphene Matrix for the Catalytic Oxidation of Benzene at Room Temperature
In: Science Advances, vol. 1, no. 11, 2015, ISSN: 2375-2548.<Go to ISI>://WOS:000216604200001
@article{RN85, title = {A Single Iron Site Confined in A Graphene Matrix for the Catalytic Oxidation of Benzene at Room Temperature}, author = {Dehui Deng and Xiaoqi Chen and Liang Yu and Xing Wu and Qingfei Liu and Yun Liu and Huaixin Yang and Huanfang Tian and Yongfeng Hu and Peipei Du and Rui Si and Junhu Wang and Xiaoju Cui and Haobo Li and Jianping Xiao and Tao Xu and Jiao Deng and Fan Yang and Paul N. Duchesne and Peng Zhang and Jigang Zhou and Litao Sun and Jianqi Li and Xiulian Pan and Xinhe Bao}, url = {<Go to ISI>://WOS:000216604200001}, doi = {10.1126/sciadv.1500462}, issn = {2375-2548}, year = {2015}, date = {2015-01-01}, urldate = {2015-01-01}, journal = {Science Advances}, volume = {1}, number = {11}, keywords = {原位电镜}, pubstate = {published}, tppubtype = {article} }ConferenceLiu, S. B.; Wang, W.; Yuan, T. Y.; Zhang, Y. Y.; Zhong, N.; Qi, R. J.; Huang, R.; Zhang, J.; Wu, X.
Reliability Investigation of Flexible Graphene-Based Actuator
IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) , 2015.@conference{RN70, title = {Reliability Investigation of Flexible Graphene-Based Actuator}, author = {S. B. Liu and W. Wang and T. Y. Yuan and Y. Y. Zhang and N. Zhong and R. J. Qi and R. Huang and J. Zhang and X. Wu}, doi = {10.1109/ipfa.2015.7224413}, year = {2015}, date = {2015-01-01}, urldate = {2015-01-01}, booktitle = {IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) }, journal = {2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)}, pages = {411-14}, keywords = {可靠性, 石墨烯}, pubstate = {published}, tppubtype = {conference} }Journal ArticleLiu, S. Y.; Yang, C.; Sun, W. F.; Qian, Q. S.; Huang, Y.; Wu, X.; Wu, M. J.; Yang, Q. L.; Sun, L. T.
Repetitive-Avalanche-Induced Electrical Parameters Shift for 4H-SiC Junction Barrier Schottky Diode
In: IEEE Transactions on Electron Devices, vol. 62, no. 2, pp. 601-605, 2015, ISSN: 0018-9383.The electrical parameters shift of 4H-SiC junction barrier Schottky diode under the repetitive avalanche current stress has been experimentally investigated. Using technical computer-aided design simulation and high resolution transmission electron microscopy analysis at atomic scale, it has been demonstrated that the forward voltage drop of the device has no variation during the stress due to the intactness of active area. However, the reverse breakdown voltage is gradually increased with the stress time, which results from hot electron injection and trapping into the SiO2 dielectric at the outer edge of p-type junction termination.
@article{RN17, title = {Repetitive-Avalanche-Induced Electrical Parameters Shift for 4H-SiC Junction Barrier Schottky Diode}, author = {S. Y. Liu and C. Yang and W. F. Sun and Q. S. Qian and Y. Huang and X. Wu and M. J. Wu and Q. L. Yang and L. T. Sun}, doi = {10.1109/ted.2014.2375821}, issn = {0018-9383}, year = {2015}, date = {2015-01-01}, urldate = {2015-01-01}, journal = {IEEE Transactions on Electron Devices}, volume = {62}, number = {2}, pages = {601-605}, abstract = {The electrical parameters shift of 4H-SiC junction barrier Schottky diode under the repetitive avalanche current stress has been experimentally investigated. Using technical computer-aided design simulation and high resolution transmission electron microscopy analysis at atomic scale, it has been demonstrated that the forward voltage drop of the device has no variation during the stress due to the intactness of active area. However, the reverse breakdown voltage is gradually increased with the stress time, which results from hot electron injection and trapping into the SiO2 dielectric at the outer edge of p-type junction termination.}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }Journal ArticleTan, Y. Y.; Yang, Q. L.; Sim, K. S.; Sun, Li Tao; Wu, Xing
Cu-Al Intermetallic Compound Investigation using Ex-Situ Post Annealing and In-Situ Annealing
In: Microelectronics Reliability, vol. 55, no. 11, pp. 2316-2323, 2015, ISSN: 0026-2714.@article{RN57, title = {Cu-Al Intermetallic Compound Investigation using Ex-Situ Post Annealing and In-Situ Annealing}, author = {Y. Y. Tan and Q. L. Yang and K. S. Sim and Li Tao Sun and Xing Wu}, doi = {10.1016/j.microrel.2015.06.050}, issn = {0026-2714}, year = {2015}, date = {2015-01-01}, urldate = {2015-01-01}, journal = {Microelectronics Reliability}, volume = {55}, number = {11}, pages = {2316-2323}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {article} }Journal ArticleZeng, Wei; Zhang, Guanhua; Wu, Xing; Zhang, Kang; Zhang, Hang; Hou, Sucheng; Li, Chengchao; Wang, Taihong; Duan, Huigao
Construction of Hierarchical CoS Nanowire@NiCo2S4 Nanosheet Arrays via One-Step ion Exchange for High-Performance Supercapacitors
In: Journal of Materials Chemistry A, vol. 3, no. 47, pp. 24033-24040, 2015, ISSN: 2050-7488@article{RN54, title = {Construction of Hierarchical CoS Nanowire@NiCo2S4 Nanosheet Arrays via One-Step ion Exchange for High-Performance Supercapacitors}, author = {Wei Zeng and Guanhua Zhang and Xing Wu and Kang Zhang and Hang Zhang and Sucheng Hou and Chengchao Li and Taihong Wang and Huigao Duan}, doi = {10.1039/c5ta05934h}, issn = {2050-7488}, year = {2015}, date = {2015-01-01}, urldate = {2015-01-01}, journal = {Journal of Materials Chemistry A}, volume = {3}, number = {47}, pages = {24033-24040}, keywords = {传感器}, pubstate = {published}, tppubtype = {article} }
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2014
Journal ArticleZou Y H, Han L, Yuan G L, Liu B L, Zhao X L, Tian B B, Wang J L, Sun S, Sun J L, Meng X J, Chu J H
Enhanced ferroelectric and dielectric properties of the P(VDF-TrFE)/Ag nanoparticles composite thin films
Journal of Materials Science-Materials in Electronics, 2014, 25: 3461-3465.Journal ArticleZhu X J, Ma J H, Yao N J, Liang Y, Jiang J C, Wang S L, Chu J H
Preparation of CuInSe2 thin films by a chemical solution method
Journal of Infrared and Millimeter Waves, 2014, 33: 231-236.Journal ArticleZhu L P, Deng H M, Sun L, Yang J, Yang P X, Chu J H
Optical properties of multiferroic LuFeO3 ceramics
Ceramics International, 2014, 40: 1171-1175.Journal ArticleZhu L P, Deng H M, Liu J, Sun L, Yang P X, Jiang A Q, Chu J H
Preparation and characterization of Bi-doped LuFeO3 thin films grown on LaNiO3 substrate
Journal of Crystal Growth, 2014, 387: 6-9.Journal ArticleZhu J J, Zhang J Z, Xu G S, Zhang X L, Hu Z G, Chu J H
Electronic transitions and dielectric functions of relaxor ferroelectric Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystals: Temperature dependent spectroscopic study
Applied Physics Letters, 2014, 104: 132903.Journal ArticleZhou W L, Deng H M, Yang P X, Chu J H
Structural phase transition, narrow band gap, and room-temperature ferromagnetism in [KNbO3](1-x)[BaNi1/2Nb1/2O3-delta](x) ferroelectrics
Applied Physics Letters, 2014, 105: 111904.Journal ArticleZhao X L, Wang J L, Tian B B, Liu B L, Zou Y H, Wang X D, Sun S, Sun J L, Meng X J, Chu J H
Temperature dependence of electronic transport property in ferroelectric polymer films
Applied Surface Science, 2014, 316: 497-500.Journal ArticleZhao X L, Wang J L, Tian B B, Liu B L, Wang X D, Sun S, Zou Y H, Lin T, Sun J L, Meng X J, Chu J H
Enhanced piezoelectric response in the artificial ferroelectric polymer multilayers
Applied Physics Letters, 2014, 105: 222907.Journal ArticleZhao X L, Wang J L, Liu B L, Tian B B, Zou Y H, Sun S, Sun J L, Meng X J, Chu J H
Enhanced dielectric and ferroelectric properties in the artificial polymer multilayers
Applied Physics Letters, 2014, 104: 082903.Journal ArticleZhao X L, Tian B B, Liu B L, Wang J L, Han L, Sun J L, Meng X J, Chu J H
Self-polarization in ultrathin Langmuir-Blodgett polymer films
Thin Solid Films, 2014, 551: 171-173.Journal ArticleZhang Y G, Tang Z, Zhao X G, Cheng G D, Tu Y, Cong W T, Peng W, Zhu Z Q, Chu J H
A neutral oxygen-vacancy center in diamond: A plausible qubit candidate and its spintronic and electronic properties
Applied Physics Letters, 2014, 105: 052107.Journal ArticleZhang X L, Zhu J J, Zhang J Z, Xu G S, Hu Z G, Chu J H
Photoluminescence study on polar nanoregions and structural variations in Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystals
Optics Express, 2014, 22: 21903-21911.Journal ArticleZhang S, Zhang J Z, Han M J, Li Y W, Hu Z G, Chu J H
Temperature dependent near infrared ultraviolet range dielectric functions of nanocrystalline (Na0.5Bi0.5)(1-x)Ce-x(Ti0.99Fe0.01)O-3 films
Applied Physics Letters, 2014, 104: 041106.Journal ArticleZhang L B, Hou Y, Zhou W, Huang Z M, Chu J H
Development of bolometer detector array made of Mn-Co-Ni-O thin films
Journal of Infrared and Millimeter Waves, 2014, 33: 359-363.Journal ArticleZhang K Z, Tao J H, Liu J F, He J, Dong Y C, Sun L, Yang P X, Chu J H
Compact Cu2ZnSn(S,Se)(4) Thin Films Fabricated by a Simple Sol-Gel Technique
Journal of Inorganic Materials, 2014, 29: 781-784.Journal ArticleZhang K Z, Tao J H, He J, Wang W J, Sun L, Yang P X, Chu J H
Composition control in Cu2ZnSnS4 thin films by a sol-gel technique without sulfurization
Journal of Materials Science-Materials in Electronics, 2014, 25: 2703-2709.Journal ArticleZhang J Z, Ding H C, Zhu J J, Li Y W, Hu Z G, Duan C G, Meng X J, Chu J H
Electronic structure and optical responses of nanocrystalline BiGaO3 films: A combination study of experiment and theory
Journal of Applied Physics, 2014, 115: 083110.Journal ArticleZhai X Z, Jia H M, Zhang Y E, Lei Y, Wei J, Gao Y H, Chu J H, He W W, Yin J J, Zheng Z
In situ fabrication of Cu2ZnSnS4 nanoflake thin films on both rigid and flexible substrates
Crystengcomm, 2014, 16: 6244-6249.Journal ArticleXu Y G, Lv M, Wang R, Zhou Y M, Lin T, Chang Z G, Yu G L, Dai N, Chu J H
Spin susceptibility of two-dimensional electron system in HgTe surface quantum well
Applied Physics Letters, 2014, 105: 062404.Journal ArticleXu W F, Yang J, Shen Y D, Bai W, Zhang Y Y, Liu J, Tang K, Wang Z, Duan C G, Tang X D, Chu J H
Magnetocaloric effect in multiferroic Y-type hexaferrite Ba0.5Sr1.5Zn2(Fe0.92Al0.08)(12)O-22
Aip Advances, 2014, 4: 067122.Journal ArticleXu L P, Zhang L L, Zhang X L, Zhang J Z, Hu Z G, Yu J, Chu J H
Phase transformations in multiferroic Bi1-xLaxFe1-yTiyO3 ceramics probed by temperature dependent Raman scattering
Journal of Applied Physics, 2014, 116: 164103.Journal ArticleXu J, Lu A, Wang C, Zou R, Liu X, Wu X, Wang Y, Li S, Sun L, Chen X, Oh H, Baek H, Yi G-C, Chu J H
ZnSe-Based Longitudinal Twinning Nanowires
Advanced Engineering Materials, 2014, 16: 459-465.Journal ArticleXiong Z, Zhang Y, Fu S, Zhang Z, Xu G, Feng Z, Chu J H, Verlinden P J
Crystal growth, microstructure characterization and cell performance analysis of casting-monocrystalline ingots with<111>orientation
proceedings of the 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), F 8-13 June 2014.Journal ArticleWu J, Huang Z M, Zhou W, Ouyang C, Hou Y, Gao Y Q, Chen R, Chu J H
Investigation of cation distribution, electrical, magnetic properties and their correlation in Mn2-xCo2xNi1-xO4 films
Journal of Applied Physics, 2014, 115: 113703.Journal ArticleWu G, Deng H M, Wang W J, Zhang K Z, Cao H Y, Yang P X, Chu J H
Effect of Co doping on the structure, optical and magnetic properties of LaAlO3 thin films
Journal of Materials Science-Materials in Electronics, 2014, 25: 3137-3140.Journal ArticleWang W J, He J, Zhang K Z, Tao J H, Sun L, Chen Y, Yang P X, Chu J H
Structure and Optical Properties of CuInSe2 and Cu0.9In0.9Zn0.2Se2 Thin Films Deposited by One-step Radio-frequency Magnetron Sputtering
Journal of Inorganic Materials, 2014, 29: 1223-1227.Journal ArticleWang J L, Liu B L, Zhao X L, Tian B B, Zou Y H, Sun S, Shen H, Sun J L, Meng X J, Chu J H
Transition of the polarization switching from extrinsic to intrinsic in the ultrathin polyvinylidene fluoride homopolymer films
Applied Physics Letters, 2014, 104: 182907Journal ArticleTong J, Huang J, Huang Z, Chu J H
Room temperature InGaAs hot electron detector for THz/subTHz regions
proceedings of the Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013, SuZhou, China, F Oct 20-29, 2013, 2014 [C]. 2014.Journal ArticleTao J H, Liu J F, He J, Zhang K Z, Jiang J C, Sun L, Yang P X, Chu J H
Synthesis and characterization of Cu2ZnSnS4 thin films by the sulfurization of co-electrodeposited Cu-Zn-Sn-S precursor layers for solar cell applications
Rsc Advances, 2014, 4: 23977-23984.Journal ArticleTao J H, He J, Zhang K Z, Liu J F, Dong Y C, Sun L, Yang P X, Chu J H
Effect of deposition potential on the properties of Cu2ZnSnS4 films for solar cell applications
Materials Letters, 2014, 135: 8-10.Journal ArticleTao B R, Miao F J, Zhang J, Chu J H
The effect of neodymium ion doping on the photocatalytic properties of nano-titanium dioxide
Journal of Infrared and Millimeter Waves, 2014, 33: 355-358.Journal ArticleShuo S, Peng Z, Jianfeng L, Yuanke L, Jianlu W, Shujiang Z, Yangjun X, Xiangjian M, Duowang F, Chu J H
Synthetically controlling the optoelectronic properties of dithieno [2,3-d:2',3'-d'-d'] benzo [1,2b:4,5-b'] dithiophene-alt-diketopyrro lopyrroleconjugated polymers for efficient solar cells
Journal of Materials Chemistry A, 2014, 2: 15316-15325.Journal ArticleShan C, Huang T, Zhang J Z, Han M J, Li Y W, Hu Z G, Chu J H
Optical and Electrical Properties of Sol Gel Derived Ba1-xLax SnO3 Transparent Conducting Films for Potential Optoelectronic Applications
Journal of Physical Chemistry C, 2014, 118: 6994-7001.Journal ArticleShan C, Chang P, Shi K, Li Y W, Hu Z G, Chu J H
Optical phonon behaviors and unstable polar mode in transparent conducting Ba1-xLaxSnO3 films from temperature dependent far-infrared reflectance spectra
Rsc Advances, 2014, 4: 34987-34991.Journal ArticleQiao Q, Lu H Y, Ge J, Xi X, Chen R L, Yang J, Zhu J B, Shi Z R, Chu J H
18.5% efficient AlOx/SiNy rear passivated industrial multicrystalline silicon solar cells
Applied Surface Science, 2014, 305: 439-444.Journal ArticlePeng C, Rao F, Wu L C, Song Z T, Gu Y F, Zhou D, Song H J, Yang P X, Chu J H
Homogeneous phase W-Ge-Te material with improved overall phase-change properties for future nonvolatile memory
Acta Materialia, 2014, 74: 49-57.Journal ArticleMiao F J, Tao B R, Hu Z G, Chu J H
Preparation and performance of micro/nano-scale Bi3.15Nd0.85Ti3O12/Si-MCP ferroelectric thin film arrays
Journal of Infrared and Millimeter Waves, 2014, 33: 139.Journal ArticleMeng X K, Deng H M, He J, Zhu L P, Sun L, Yang P X, Chu J H
Synthesis of Cu2FeSnSe4 thin film by selenization of RF magnetron sputtered precursor
Materials Letters, 2014, 117: 1-3.Journal ArticleMeng L, LinGuolin Y, Yonggang X, Tie L, Ning D, Chu J H
Magnetotransport Investigations of Two-Dimensional Electron Gas for AlGaN/GaN Heterostructure
Advanced Materials Research, 2014, 1058: 132-135.Journal ArticleMa Z X, Liao X B, Kong G L, Chu J H
Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix (Retraction of vol 42, pg 367, 2000)
Materials Letters, 2014, 120: 299-299.Journal ArticleLuo C H, Shen Z T, Meng X J, Han L, Sun S, Lin T, Sun J L, Peng H, Chu J H
Pyromellitic Diimide-Benzodithiophene Copolymer for Polymer Solar Cells: Effect of Side Chain Length and Thiophene pi-Bridge on Optical and Electronic Properties
Molecular Crystals and Liquid Crystals, 2014, 604: 151-163.Journal ArticleLuo C H, Shen Z T, Meng X J, Han L, Sun S, Lin T, Sun J L, Peng H, Chu J H
Design and synthesis of pyromellitic diimide-based donor-acceptor conjugated polymers for photovoltaic application
Polymers for Advanced Technologies, 2014, 25: 809-815.Journal ArticleLuo C H, Meng X J, Han L, Sun S, Lin T, Sun J L, Peng H, Chu J H
n-Type pyromellitic diimide-benzodithiophene-containing conjugated polymers for all-polymer solar cells with high open-circuit voltage
Synthetic Metals, 2014, 196: 110-116.Journal ArticleLuo C H, Bi W X, Deng S M, Zhang J, Chen S Y, Li B, Liu Q C, Peng H, Chu J H
Indolo[3,2,1-jk]carbazole Derivatives-Sensitized Solar Cells: Effect of pi-Bridges on the Performance of Cells
Journal of Physical Chemistry C, 2014, 118: 14211-14217.Journal ArticleLiu X Z, Xu Y G, Yu G L, Lin T, Guo S L, Chu J H, Zhang Y G
The zero field spin splitting and Zeeman splitting in the In0.53Ga0.47As/In0.52Al0.48As quantum well
Journal of Infrared and Millimeter Waves, 2014, 33: 134-138.Journal ArticleLiu J, Deng H M, Zhu L P, Zhang K Z, Meng X K, Cao H Y, Yang P X, Chu J H
Structure, optical and magnetic properties of Bi1-xEuxFeO3 films fabricated by pulsed laser deposition
Applied Surface Science, 2014, 316: 78-81.Journal ArticleLiu J, Deng H M, Zhai X Z, Lin T, Meng X J, Zhang Y Y, Zhou W L, Yang P X, Chu J H
Influence of Zn doping on structural, optical and magnetic properties of BiFeO3 films fabricated by the sol-gel technique
Materials Letters, 2014, 133: 49-52.Journal ArticleLiu J, Deng H M, Cao H Y, Zhai X Z, Tao J H, Sun L, Yang P X, Chu J H
Influence of rare-earth elements doping on structure and optical properties of BiFe03 thin films fabricated by pulsed laser deposition
Applied Surface Science, 2014, 307: 543-547.Journal ArticleLiu B L, Tian B B, Geiger S, Hu Z G, Zhao X L, Zou Y H, Wang J L, Sun J L, Sun S, Dkhil B, Meng X J, Chu J H
The intermediate temperature T* revealed in relaxor polymers
Applied Physics Letters, 2014, 104: 222907Journal ArticleLi X X, Deng H M, Zhang J Z, Yang P X, Chu J H
Bismuth composition dependence of properties of Bi-x FeO3 thin films
Journal of Infrared and Millimeter Waves, 2014, 33: 19.Journal ArticleLi X R, Han M J, Zhang X L, Shan C, Hu Z G, Zhu Z Q, Chu J H
Temperature-dependent band gap, interband transitions, and exciton formation in transparent p-type delafossite CuCr1-xMgxO2 films
Physical Review B, 2014, 90: 035308.Journal ArticleLi X R, Han M J, Wu J D, Shan C, Hu Z G, Zhu Z Q, Chu J H
Low voltage tunneling magnetoresistance in CuCrO2-based semiconductor heterojunctions at room temperature
Journal of Applied Physics, 2014, 116: 223701.Journal ArticleLi X R, Han M J, Chang P, Hu Z G, Li Y W, Zhu Z Q, Chu J H
Temperature dependence of terahertz optical characteristics and carrier transport dynamics in p-type transparent conductive CuCr1-xMgxO2 semiconductor films
Applied Physics Letters, 2014, 104: 012103.Journal ArticleKong H, He J, Meng X K, Zhu L P, Tao J H, Sun L, Yang P X, Chu J H
Influence of Se supply for selenization of Cu(In,Ga)Se-2 precursors deposited by sputtering from a single quaternary target
Materials Letters, 2014, 118: 21-23.Journal ArticleKong H, He J, Huang L, Zhu L P, Sun L, Yang P X, Chu J H
Effect of working pressure on growth of Cu(In,Ga)Se-2 thin film deposited by sputtering from a single quaternary target
Materials Letters, 2014, 116: 75-78.Journal ArticleJing C B, Guo H, Hu Z G, Yang P X, Chu J H, Liu A Y, Shi Y W
Metallic attenuated total reflection infrared hollow fibers for robust optical transmission systems
Applied Physics Letters, 2014, 105: 011102.ConferenceJing C, Bai W, Hu Z, Yang P, Liu A, Lin F, Shi Y, Chu J H
Low-temperature, low-cost growth of robust ATR GeO2 hollow fibers based on copper capillary tubes for transmission of CO2 laser light
proceedings of the Optical Fibers and Sensors for Medical Diagnostics and Treatment Applications Xiv, San Francisco, CA, F Feb 01-02, 2014, 2014 Spie.Journal ArticleJiang P P, Zhang X L, Chang P, Hu Z G, Bai W, Li Y W, Chu J H
Spin-phonon interactions of multiferroic Bi4Ti3O12-BiFeO3 ceramics: Low-temperature Raman scattering and infrared reflectance spectra investigations
Journal of Applied Physics, 2014, 115: 144101.Journal ArticleJiang P P, Duan Z H, Xu L P, Zhang X L, Li Y W, Hu Z G, Chu J H
Phase transformation in multiferroic Bi5Ti3FeO15 ceramics by temperature-dependent ellipsometric and Raman spectra: An interband electronic transition evidence
Journal of Applied Physics, 2014, 115: 083101.Journal ArticleHuang Z-P, Zhao S-R, Sun L, Sun P-C, Zhang C-J, Wu Y-H, Cao H, Wang S-L, Hu Z-G, Yang P-X, Chu J H
Voltage dependent quantum efficiency measurement in property study of thin film solar cells
Journal of Infrared and Millimeter Waves, 2014, 33: 395-399.Journal ArticleHuang Z, Tong J, Huang J, Zhou W, Wu J, Gao Y, Lu J, Lin T, Wei Y, Chu J H
Room-temperature photoconductivity far below the semiconductor bandgap
Adv Mater, 2014, 26: 6594-6598.ConferenceHuang Z, OuYang C, Zhou W, Tong J, Huang J, Wu J, Gao Y, Chu J H
Progress on Mn-Co-Ni-O infrared thin films and detectors
proceedings of the 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), F 14-19 Sept. 2014, 2014.Journal ArticleHuang T, Hu Z G, Xu G S, Zhang X L, Zhang J Z, Chu J H
Inherent optical behavior and structural variation in Na0.5Bi0.5TiO3-6% BaTiO3 revealed by temperature dependent Raman scattering and ultraviolet-visible transmittance
Applied Physics Letters, 2014, 104: 111908.Journal ArticleHuang R, Ding H C, Liang W I, Gao Y C, Tang X D, He Q, Duan C G, Zhu Z Q, Chu J H, Fisher C A J, Hirayama T, Ikuhara Y, Chu Y H
Atomic-Scale Visualization of Polarization Pinning and Relaxation at Coherent BiFeO3/LaAlO3 Interfaces
Advanced Functional Materials, 2014, 24: 793-799.ConferenceHuang J, Tong J, Huang Z, Chu J H
Coherent CdTe Terahertz Source for High-Resolutional Imaging
proceedings of the Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013, SuZhou, China, F Oct 20-29, 2013, 2014.Journal ArticleHong X K, Liu Y S, Zhang D B, Feng J F, Chu J H
Microstructures and electrical properties of Ba0.9Sr0.1Ti0.99Mn0.01O3 multilayers
Journal of Alloys and Compounds, 2014, 613: 244-248.Journal ArticleHe X, Xu T, Xu X, Zeng Y, Xu J, Sun L, Wang C, Xing H, Wu B, Lu A, Liu D, Chen X, Chu J H
In situ atom scale visualization of domain wall dynamics in VO2 insulator-metal phase transition
Sci Rep, 2014, 4: 6544.Journal ArticleHe J, Tao J H, Meng X K, Dong Y C, Zhang K Z, Sun L, Yang P X, Chu J H
Effect of selenization time on the growth of Cu2ZnSnSe4 thin films obtained from rapid thermal processing of stacked metallic layers
Materials Letters, 2014, 126: 1-4.Journal ArticleHe J, Sun L, Chen Y, Jiang J C, Yang P X, Chu J H
Cu2ZnSnS4 thin film solar cell utilizing rapid thermal process of precursors sputtered from a quaternary target: a promising application in industrial processes
Rsc Advances, 2014, 4: 43080-43086.Journal ArticleGuo S, Hu Z G, Ji X L, Huang T, Zhang X L, Wu L C, Song Z T, Chu J H
Temperature and concentration dependent crystallization behavior of Ge2Sb2Te5 phase change films: tungsten doping effects
Rsc Advances, 2014, 4: 57218-57222.Journal ArticleGe J, Jiang J C, Yang P X, Peng C, Huang Z P, Zuo S H, Yang L H, Chu J H
A 5.5% efficient co-electrodeposited ZnO/CdS/Cu2ZnSnS4/Mo thin film solar cell
Solar Energy Materials and Solar Cells, 2014, 125: 20-26.ConferenceGe J, Jiang J, Yang P, Chu J H, Yan Y
Co-electroplated CU2ZnSnS4 Thin-film Solar Cells: the Role of Precursor Metallic Composition
2014 IEEE proceedings of the 40th IEEE Photovoltaic Specialists Conference (PVSC) Denver, CO, USA Jun 08-13, 2014.Journal ArticleGe J, Chu J H, Jiang J, Yan Y, Yang P
Characteristics of in-substituted CZTS thin film and bifacial solar cell
ACS Appl Mater Interfaces, 2014, 6: 21118-21130.Journal ArticleGao Y Q, Huang Z M, Hou Y, Wu J, Zhou W, Zhang L B, Chu J H
Infrared optical properties of Mn1.56Co0.96Ni0.48O4 thin films prepared by chemical solution deposition
Applied Physics a-Materials Science & Processing, 2014, 114: 829-832.Journal ArticleGao Y Q, Huang Z M, Hou Y, Wu J, Zhou W, OuYang C, Huang J G, Tong J C, Chu J H
Structural and electrical properties of Mn1.56Co0.96Ni0.48O4 NTC thermistor films
Materials Science and Engineering B-Advanced Functional Solid-State Materials, 2014, 185: 74-78.Journal ArticleGao Y H, Yang J, Shen H, Sun J L, Meng X J, Chu J H
Evolution of multiple dielectric responses and relaxor-like behaviors in pure and nitrogen-ion-implanted (Ba, Sr)TiO3 thin films
Applied Physics Letters, 2014, 104: 122902.Journal ArticleDuan Z H, Jiang K, Xu L P, Li Y W, Hu Z G, Chu J H
Intrinsic relationship between electronic structures and phase transition of SrBi2-xNdxNb2O9 ceramics from ultraviolet ellipsometry at elevated temperatures
Journal of Applied Physics, 2014, 115: 054107.Journal ArticleDuan Z H, Chang P, Hu Z G, Wang J X, Wang G S, Dong X L, Chu J H
Temperature dependent Raman scattering and far-infrared reflectance spectra of MgO modified Pb-0.99(Zr0.95Ti0.05)(0.98)Nb0.02O3 ceramics: A composition effect
Journal of Applied Physics, 2014, 116: 093513.Journal ArticleDuan Z, Jiang K, Wu J, Sun J, Hu Z, Chu J H
Thickness-dependent optical properties in compressively strained BiFeO3/LaAlO3 films grown by pulsed laser deposition
Materials Research Bulletin, 2014, 51: 351-355.Journal ArticleDing X J, Xu L P, Hu Z G, Chen X F, Wang G S, Dong X L, Chu J H
Phase diagram and incommensurate antiferroelectric structure in (Pb1-1.5xLax)(Zr0.42Sn0.40Ti0.18)O-3 ceramics discovered by band-to-band optical transitions
Applied Physics Letters, 2014, 105: 131909.Journal ArticleChu J H, Meng X
A Ferroelectric Polymer of Polyvinylidene Fluoride for the Application of Infrared Detection
Infrared Technology, 2014, 36: 1-9.Journal ArticleCao H, Zhang C J, Chu J H
The effect of working gas pressure and deposition power on the properties of molybdenum films deposited by DC magnetron sputtering
Science China-Technological Sciences, 2014, 57: 947-952.Journal ArticleBai W, Yin W H, Yang J, Tang K, Zhang Y Y, Lin T, Meng X J, Duan C G, Tang X D, Chu J H
Cryogenic temperature relaxor-like dielectric responses and magnetodielectric coupling in Aurivillius Bi5Ti3FeO15 multiferroic thin films
Journal of Applied Physics, 2014, 116: 084103.Journal ArticleBi, H. C.; Huang, X.; Wu, X.; Cao, X. H.; Tan, C. L.; Yin, Z. Y.; Lu, X. H.; Sun, L. T.; Zhang, H.
Carbon Microbelt Aerogel Prepared by Waste Paper: An Efficient and Recyclable Sorbent for Oils and Organic Solvents
In: Small, vol. 10, no. 17, pp. 3544-3550, 2014, ISSN: 1613-6810.@article{RN14, title = {Carbon Microbelt Aerogel Prepared by Waste Paper: An Efficient and Recyclable Sorbent for Oils and Organic Solvents}, author = {H. C. Bi and X. Huang and X. Wu and X. H. Cao and C. L. Tan and Z. Y. Yin and X. H. Lu and L. T. Sun and H. Zhang}, doi = {10.1002/smll.201303413}, issn = {1613-6810}, year = {2014}, date = {2014-01-01}, urldate = {2014-01-01}, journal = {Small}, volume = {10}, number = {17}, pages = {3544-3550}, keywords = {原位电镜, 石墨烯}, pubstate = {published}, tppubtype = {article} }Journal ArticleChen, Yuming; Meng, Lijuan; Zhao, Weiwei; Liang, Zheng; Wu, Xing; Nan, Haiyan; Wu, Zhangting; Huang, Shan; Sun, Litao; Wang, Jinlan; Ni, Zhenhua
Raman Mapping Investigation of Chemical Vapor Deposition-Fabricated Twisted Bilayer Graphene with Irregular Grains
In: Physical Chemistry Chemical Physics, vol. 16, no. 39, pp. 21682-21687, 2014, ISSN: 1463-9076.@article{RN58, title = {Raman Mapping Investigation of Chemical Vapor Deposition-Fabricated Twisted Bilayer Graphene with Irregular Grains}, author = {Yuming Chen and Lijuan Meng and Weiwei Zhao and Zheng Liang and Xing Wu and Haiyan Nan and Zhangting Wu and Shan Huang and Litao Sun and Jinlan Wang and Zhenhua Ni}, doi = {10.1039/c4cp03386h}, issn = {1463-9076}, year = {2014}, date = {2014-01-01}, urldate = {2014-01-01}, journal = {Physical Chemistry Chemical Physics}, volume = {16}, number = {39}, pages = {21682-21687}, keywords = {石墨烯}, pubstate = {published}, tppubtype = {article} }Journal ArticleCong, C. X.; Shang, J. Z.; Wu, X.; Cao, B. C.; Peimyoo, N.; Qiu, C.; Sun, L. T.; Yu, T.
Synthesis and Optical Properties of Large-Area Single-Crystalline 2D Semiconductor WS2 Monolayer from Chemical Vapor Deposition
In: Physical Chemistry Chemical Physics, vol. 16, no. 39, pp. 21682-21687, 2014, ISSN: 1463-9076.@article{RN24, title = {Synthesis and Optical Properties of Large-Area Single-Crystalline 2D Semiconductor WS2 Monolayer from Chemical Vapor Deposition}, author = {C. X. Cong and J. Z. Shang and X. Wu and B. C. Cao and N. Peimyoo and C. Qiu and L. T. Sun and T. Yu}, doi = {10.1002/adom.201300428}, issn = {2195-1071}, year = {2014}, date = {2014-01-01}, urldate = {2014-01-01}, journal = {Advanced Optical Materials}, volume = {2}, number = {2}, pages = {131-136}, keywords = {}, pubstate = {published}, tppubtype = {article} }Journal ArticleGuo, X. G.; Fang, G. Z.; Li, G.; Ma, H.; Fan, H. J.; Yu, L.; Ma, C.; Wu, X.; Deng, D. H.; Wei, M. M.; Tan, D. L.; Si, R.; Zhang, S.; Li, J. Q.; Sun, L. T.; Tang, Z. C.; Pan, X. L.; Bao, X. H.
Direct, Nonoxidative Conversion of Methane to Ethylene, Aromatics, and Hydrogen
In: Science, vol. 344, no. 6184, pp. 616-619, 2014, ISSN: 0036-8075.The efficient use of natural gas will require catalysts that can activate the first C-H bond of methane while suppressing complete dehydrogenation and avoiding overoxidation. We report that single iron sites embedded in a silica matrix enable direct, nonoxidative conversion of methane, exclusively to ethylene and aromatics. The reaction is initiated by catalytic generation of methyl radicals, followed by a series of gas-phase reactions. The absence of adjacent iron sites prevents catalytic C-C coupling, further oligomerization, and hence, coke deposition. At 1363 kelvin, methane conversion reached a maximum at 48.1% and ethylene selectivity peaked at 48.4%, whereas the total hydrocarbon selectivity exceeded 99%, representing an atom-economical transformation process of methane. The lattice-confined single iron sites delivered stable performance, with no deactivation observed during a 60-hour test.
@article{RN12, title = {Direct, Nonoxidative Conversion of Methane to Ethylene, Aromatics, and Hydrogen}, author = {X. G. Guo and G. Z. Fang and G. Li and H. Ma and H. J. Fan and L. Yu and C. Ma and X. Wu and D. H. Deng and M. M. Wei and D. L. Tan and R. Si and S. Zhang and J. Q. Li and L. T. Sun and Z. C. Tang and X. L. Pan and X. H. Bao}, doi = {10.1126/science.1253150}, issn = {0036-8075}, year = {2014}, date = {2014-01-01}, urldate = {2014-01-01}, journal = {Science}, volume = {344}, number = {6184}, pages = {616-619}, abstract = {The efficient use of natural gas will require catalysts that can activate the first C-H bond of methane while suppressing complete dehydrogenation and avoiding overoxidation. We report that single iron sites embedded in a silica matrix enable direct, nonoxidative conversion of methane, exclusively to ethylene and aromatics. The reaction is initiated by catalytic generation of methyl radicals, followed by a series of gas-phase reactions. The absence of adjacent iron sites prevents catalytic C-C coupling, further oligomerization, and hence, coke deposition. At 1363 kelvin, methane conversion reached a maximum at 48.1% and ethylene selectivity peaked at 48.4%, whereas the total hydrocarbon selectivity exceeded 99%, representing an atom-economical transformation process of methane. The lattice-confined single iron sites delivered stable performance, with no deactivation observed during a 60-hour test.}, keywords = {原位电镜}, pubstate = {published}, tppubtype = {article} }Journal ArticleLi, M.; Wu, X.; Li, L.; Wang, Y. X.; Li, D. B.; Pan, J.; Li, S. J.; Sun, L. T.; Li, G. H.
Defect-Mediated Phase Transition Temperature of VO2 (M) Nanoparticles with Excellent Thermochromic Performance and Low Threshold Voltage
In: Journal of Materials Chemistry A, vol. 2, no. 13, pp. 4520-4523, 2014, ISSN: 2050-7488.This paper reports the phase transition temperature regulation of VO2 (M) nanoparticles using interfacial defects and size effect other than the traditional doping routine. The nanoparticles exhibit excellent thermochromic performance and a low threshold voltage.
<Go to ISI>://WOS:000332460800005
@article{RN2, title = {Defect-Mediated Phase Transition Temperature of VO2 (M) Nanoparticles with Excellent Thermochromic Performance and Low Threshold Voltage}, author = {M. Li and X. Wu and L. Li and Y. X. Wang and D. B. Li and J. Pan and S. J. Li and L. T. Sun and G. H. Li}, url = {<Go to ISI>://WOS:000332460800005}, doi = {10.1039/c3ta14822j}, issn = {2050-7488}, year = {2014}, date = {2014-01-01}, urldate = {2014-01-01}, journal = {Journal of Materials Chemistry A}, volume = {2}, number = {13}, pages = {4520-4523}, abstract = {This paper reports the phase transition temperature regulation of VO2 (M) nanoparticles using interfacial defects and size effect other than the traditional doping routine. The nanoparticles exhibit excellent thermochromic performance and a low threshold voltage.}, keywords = {原位电镜}, pubstate = {published}, tppubtype = {article} }Journal ArticleLi, X. Y.; Pan, X. L.; Yu, L.; Ren, P. J.; Wu, X.; Sun, L. T.; Jiao, F.; Bao, X. H.
Silicon Carbide-Derived Carbon Nanocomposite as A Substitute for Mercury in the Catalytic Hydrochlorination of Acetylene
In: Nature Communications, vol. 5, pp. 7, 2014, ISSN: 2041-1723.Acetylene hydrochlorination is an important coal-based technology for the industrial production of vinyl chloride, however it is plagued by the toxicity of the mercury chloride catalyst. Therefore extensive efforts have been made to explore alternative catalysts with various metals. Here we report that a nanocomposite of nitrogen- doped carbon derived from silicon carbide activates acetylene directly for hydrochlorination in the absence of additional metal species. The catalyst delivers stable performance during a 150 hour test with acetylene conversion reaching 80% and vinyl chloride selectivity over 98% at 200 degrees C. Experimental studies and theoretical simulations reveal that the carbon atoms bonded with pyrrolic nitrogen atoms are the active sites. This proof- of- concept study demonstrates that such a nanocomposite is a potential substitute for mercury while further work is still necessary to bring this to the industrial stage. Furthermore, the finding also provides guidance for design of carbon- based catalysts for activation of other alkynes.
@article{RN15, title = {Silicon Carbide-Derived Carbon Nanocomposite as A Substitute for Mercury in the Catalytic Hydrochlorination of Acetylene}, author = {X. Y. Li and X. L. Pan and L. Yu and P. J. Ren and X. Wu and L. T. Sun and F. Jiao and X. H. Bao}, doi = {10.1038/ncomms4688}, issn = {2041-1723}, year = {2014}, date = {2014-01-01}, urldate = {2014-01-01}, journal = {Nature Communications}, volume = {5}, pages = {7}, abstract = {Acetylene hydrochlorination is an important coal-based technology for the industrial production of vinyl chloride, however it is plagued by the toxicity of the mercury chloride catalyst. Therefore extensive efforts have been made to explore alternative catalysts with various metals. Here we report that a nanocomposite of nitrogen- doped carbon derived from silicon carbide activates acetylene directly for hydrochlorination in the absence of additional metal species. The catalyst delivers stable performance during a 150 hour test with acetylene conversion reaching 80% and vinyl chloride selectivity over 98% at 200 degrees C. Experimental studies and theoretical simulations reveal that the carbon atoms bonded with pyrrolic nitrogen atoms are the active sites. This proof- of- concept study demonstrates that such a nanocomposite is a potential substitute for mercury while further work is still necessary to bring this to the industrial stage. Furthermore, the finding also provides guidance for design of carbon- based catalysts for activation of other alkynes.}, keywords = {原位电镜}, pubstate = {published}, tppubtype = {article} }Journal ArticleMei, Sen; He, Longbing; Wu, Xing; Sun, Jun; Wang, Binjie; Xiong, Xiaochuan; Sun, Litao
Dynamic Investigation of Interface Atom Migration During Heterostructure Nanojoining
In: Nanoscale, vol. 6, no. 1, pp. 405-411, 2014, ISSN: 2040-3364.@article{RN68, title = {Dynamic Investigation of Interface Atom Migration During Heterostructure Nanojoining}, author = {Sen Mei and Longbing He and Xing Wu and Jun Sun and Binjie Wang and Xiaochuan Xiong and Litao Sun}, doi = {10.1039/c3nr03911k}, issn = {2040-3364}, year = {2014}, date = {2014-01-01}, urldate = {2014-01-01}, journal = {Nanoscale}, volume = {6}, number = {1}, pages = {405-411}, keywords = {原位电镜}, pubstate = {published}, tppubtype = {article} }Journal ArticleXu, J.; Lu, A. J.; Wang, C. R.; Zou, R. J.; Liu, X. Y.; Wu, X.; Wang, Y. X.; Li, S. J.; Sun, L. T.; Chen, X. S.; Oh, H.; Baek, H.; Yi, G. C.; Chu, J. H.
ZnSe-Based Longitudinal Twinning Nanowires
In: Advanced Engineering Materials, vol. 16, no. 4, pp. 459-465, 2014, ISSN: 1438-1656.Zinc blende ZnSe longitudinal twinning nanowires and a sandwich structure with the wurtzite ZnSe inserting into the zinc blende ZnSe longitudinal twinning nanowires are fabricated via a simple thermal evaporation method. The high-resolution transmission electron microscope images of the two types of nanowires match well with simulated atomic models of them. The growth of them might be caused by the crystal plane slip during the phase transformation process between the wurtzite and the zinc blende ZnSe nanowire. The vibrating and luminescence properties of the as-grown longitudinal twinning nanowire are investigated by room-temperature Raman and low-temperature (10K) photoluminescence spectroscopy, respectively. The electrical transport properties of the two types of longitudinal twinning ZnSe nanowires and the monocrystal ZnSe nanowires were compared using in situ measurement in transmission electron microscope.
@article{RN16, title = {ZnSe-Based Longitudinal Twinning Nanowires}, author = {J. Xu and A. J. Lu and C. R. Wang and R. J. Zou and X. Y. Liu and X. Wu and Y. X. Wang and S. J. Li and L. T. Sun and X. S. Chen and H. Oh and H. Baek and G. C. Yi and J. H. Chu}, doi = {10.1002/adem.201300405}, issn = {1438-1656}, year = {2014}, date = {2014-01-01}, urldate = {2014-01-01}, journal = {Advanced Engineering Materials}, volume = {16}, number = {4}, pages = {459-465}, abstract = {Zinc blende ZnSe longitudinal twinning nanowires and a sandwich structure with the wurtzite ZnSe inserting into the zinc blende ZnSe longitudinal twinning nanowires are fabricated via a simple thermal evaporation method. The high-resolution transmission electron microscope images of the two types of nanowires match well with simulated atomic models of them. The growth of them might be caused by the crystal plane slip during the phase transformation process between the wurtzite and the zinc blende ZnSe nanowire. The vibrating and luminescence properties of the as-grown longitudinal twinning nanowire are investigated by room-temperature Raman and low-temperature (10K) photoluminescence spectroscopy, respectively. The electrical transport properties of the two types of longitudinal twinning ZnSe nanowires and the monocrystal ZnSe nanowires were compared using in situ measurement in transmission electron microscope.}, keywords = {}, pubstate = {published}, tppubtype = {article} }Journal ArticleXu, X. J.; Fu, Q.; Wei, M. M.; Wu, X.; Bao, X. H.
Comparative Studies of Redox Behaviors of Pt-Co/SiO2 and Au-Co/SiO2 Catalysts and Their Activities in CO Oxidation
In: Catalysis Science & Technology, vol. 4, no. 9, pp. 3151-3158, 2014, ISSN: 2044-4753.Silica supported Pt-Co and Au-Co nanoparticles (NPs) were subjected to various redox processes and characterized by X-ray diffraction, X-ray absorption near edge structure, and X-ray photoelectron spectroscopy. We found that most of the Co oxide (CoOx) species on Pt NPs can be reduced at 100 degrees C forming an alloy structure with Pt at elevated temperatures. Oxidation of Co in the reduced sample takes place gradually with increasing temperatures. In contrast, temperatures higher than 400 degrees C are needed to reduce CoOx on Au NPs and Co atoms hardly form an alloy with Au even at 600 degrees C. The Co species in the reduced Au-Co/SiO2 sample were quickly oxidized in an O-2 atmosphere at room temperature. High CO oxidation activity was observed in the Pt-Co/SiO2 catalyst reduced below 300 degrees C; however this necessitated reduction at 600 degrees C of the Au-Co/SiO2 catalyst. The results illustrate a stronger interaction of Co (CoOx) with Pt than with Au. In both systems, the optimum treatment conditions are to produce a similar CoO-on-noble metal (NM) active structure and maximize the density of interface sites between the surface CoO structure and the NM support.
@article{RN13, title = {Comparative Studies of Redox Behaviors of Pt-Co/SiO2 and Au-Co/SiO2 Catalysts and Their Activities in CO Oxidation}, author = {X. J. Xu and Q. Fu and M. M. Wei and X. Wu and X. H. Bao}, doi = {10.1039/c4cy00354c}, issn = {2044-4753}, year = {2014}, date = {2014-01-01}, urldate = {2014-01-01}, journal = {Catalysis Science & Technology}, volume = {4}, number = {9}, pages = {3151-3158}, abstract = {Silica supported Pt-Co and Au-Co nanoparticles (NPs) were subjected to various redox processes and characterized by X-ray diffraction, X-ray absorption near edge structure, and X-ray photoelectron spectroscopy. We found that most of the Co oxide (CoOx) species on Pt NPs can be reduced at 100 degrees C forming an alloy structure with Pt at elevated temperatures. Oxidation of Co in the reduced sample takes place gradually with increasing temperatures. In contrast, temperatures higher than 400 degrees C are needed to reduce CoOx on Au NPs and Co atoms hardly form an alloy with Au even at 600 degrees C. The Co species in the reduced Au-Co/SiO2 sample were quickly oxidized in an O-2 atmosphere at room temperature. High CO oxidation activity was observed in the Pt-Co/SiO2 catalyst reduced below 300 degrees C; however this necessitated reduction at 600 degrees C of the Au-Co/SiO2 catalyst. The results illustrate a stronger interaction of Co (CoOx) with Pt than with Au. In both systems, the optimum treatment conditions are to produce a similar CoO-on-noble metal (NM) active structure and maximize the density of interface sites between the surface CoO structure and the NM support.}, keywords = {}, pubstate = {published}, tppubtype = {article} }
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2013
Journal ArticleZhu Z, Chu J H
Analysis of the current conduction in poly-Si thin film transistors
Semiconductor Science and Technology, 2013, 28: 015017.Journal ArticleZhu J J, Jiang K, Xu G S, Hu Z G, Li Y W, Zhu Z Q, Chu J H
Temperature-dependent Raman scattering and multiple phase coexistence in relaxor ferroelectric Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystals
Journal of Applied Physics, 2013, 114: 153508.Journal ArticleZhao S R, Huang Z P, Sun L, Sun P C, Zhang C J, Wu Y H, Cao H, Wang S L, Chu J H
Analysis of electrical property parameters of CdS/CdTe solar cells fabricated by close space-sublimation
Acta Physica Sinica, 2013, 62: 188801.Journal ArticleZhao S R, Huang Z P, Sun L, Sun P C, Zhang C J, Wu Y H, Cao H, Wang S L, Chu J H
A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells
Acta Physica Sinica, 2013, 62: 168801.Journal ArticleZhao S R, Huang Z P, Sun L, Sun P C, Zhang C J, Wu Y H, Cao H, Huang Z M, Wang S L, Chu J H
Numerical analysis of the non-ideal current-voltage characteristics of solar cell
Journal of Infrared and Millimeter Waves, 2013, 32: 389.Journal ArticleZhang Y, Huang Z M, Hou Y, Zhou W, Chu J H
Spectroscopic and electrial properties of manganese cobalt nickelate copper films prepared by chemical depopition
Journal of Infrared and Millimeter Waves, 2013, 32: 113-117.Journal ArticleZhang X L, Hu Z G, Xu G S, Zhu J J, Li Y W, Zhu Z Q, Chu J H
Optical bandgap and phase transition in relaxor ferroelectric Pb(Mg1/3Nb2/3) O-3-xPbTiO(3) single crystals: An inherent relationship
Applied Physics Letters, 2013, 103: 051902.Journal ArticleZhang S, Han M J, Zhang J Z, Li Y W, Hu Z G, Chu J H
Optoelectronic and Ferroelectric Properties of Cerium-Doped (Na0.5Bi0.5)(Ti0.99Fe0.01)O-3 Nanocrystalline Films on (111) Pt/TiO2/SiO2/Si: A Composition-Dependent Study
Acs Applied Materials & Interfaces, 2013, 5: 3191-3198.Journal ArticleZhang Q, Chen D L, Li X, Yang P X, Chu J H, Zhao Z J
Influence of an Electronic Field on the GMI Effect of Fe-based Nanocrystalline Microwire
Nano-Micro Letters, 2013, 5: 13-17.Journal ArticleZhang L B, Hou Y, Zhou W, Gao Y Q, Wu J, Huang Z M, Chu J H
Investigation on optical properties of NiMn2O4 films by spectroscopic ellipsometry
Solid State Communications, 2013, 159: 32-35.ConferenceZhang J Z, Huang T, Li Y W, Hu Z G, Meng X J, Chu J H
Synthesis and optical properties of the (La, Mn)-codoped BiFeO3 films on n(+)-Si(100) substrates
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013.Journal ArticleZhang J Z, Duan Z H, Zhang H, Han M J, Li Y W, Hu Z G, Chu J H
Improved electric behaviors of the Pt/Bi1-xLaxFe0.92Mn0.08O3/n(+)-Si heterostructure for nonvolatile ferroelectric random-access memory
Journal of Materials Chemistry C, 2013, 1: 6252-6258.ConferenceZhang J, Deng H, Yang P, He J, Liu T, Sun L, Chu J H
The characterization of CuInSe2 thin films by sequential processes of sputtering and selenization
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013.Journal ArticleZhang C J, Wu Y H, Cao H, Zhao S R, Wang S L, Chu J H
Effect of different annealing conditions on the properties of CdS thin films deposited by magnetron sputtering
Journal of Infrared and Millimeter Waves, 2013, 32: 298-303.Journal ArticleZhang C J, Wu Y H, Cao H, Gao Y Q, Zhao S R, Wang S L, Chu J H
Effects of different substrates and CdCl2 treatment on the properties of CdS thin films deposited by magnetron sputtering
Acta Physica Sinica, 2013, 62: 158107.Journal ArticleZhang C, Cong J, Wu Y, Cao H, Wang S, Chu J H
Visible-near Infrared Spectral Transmittance Properties for CdS Films
Infrared Technology, 2013, 35: 259-264.Journal ArticleYu W L, Han M J, Jiang K, Duan Z H, Li Y W, Hu Z G, Chu J H
Enhanced Frohlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance
Journal of Raman Spectroscopy, 2013, 44: 142-146.Journal ArticleYu Q, Li W W, Liang J R, Duan Z H, Hu Z G, Liu J, Chen H D, Chu J H
Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1 1)-oriented vanadium dioxide films grown by magnetron sputtering
Journal of Physics D-Applied Physics, 2013, 46: 055310.ConferenceYao N, Ma J, Zhu X, Liang Y, Jiang J, Chu J H
Preparation of CuInSe2 thin films by spin-coating and selenization
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013.Journal ArticleYan H R, Deng H M, Ding N F, He J, Peng L, Sun L, Yang P X, Chu J H
Influence of transition elements doping on structural, optical and magnetic properties of BiFeO3 films fabricated by magnetron sputtering
Materials Letters, 2013, 111: 123-125.ConferenceXu L P, Zhang L L, Jiang P P, Yu J, Duan Z H, Hu Z G, Zhu Z Q, Chu J H
Interband electronic transitions and phase transformation of multiferroic Bi1-xLaxFe1-yTiyO3 ceramics revealed by temperature-dependent spectroscopic ellipsometry
Journal of Applied Physics, 2013, 114: 233509.ConferenceXu J, Lu A, Wang C, Chen X, Chu J H, Yi G-C
Growth of ZnSe-based longitudinal twinning nanowires by phase transformation
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, China, F Sep 20-23, 2013.Journal ArticleXiang P H, Zhong N, Duan C G, Tang X D, Hu Z G, Yang P X, Zhu Z Q, Chu J H
Strain controlled metal-insulator transition in epitaxial NdNiO3 thin films
Journal of Applied Physics, 2013, 114: 243713.Journal ArticleWei L M, Liu X Z, Yu G L, Gao K H, Wang Q W, Lin T, Guo S L, Wei Y F, Yang J R, He L, Dai N, Chu J H
Antilocalization effect in HgCdTe film
Journal of Infrared and Millimeter Waves, 2013, 32: 141-144.Journal ArticleWei L M, Gao K H, Liu X Z, Yu G, Wang Q W, Lin T, Guo S L, Wei Y F, Yang J R, He L, Dai N, Chu J H, Austing D G
Microwave-enhanced dephasing time in a HgCdTe film
Applied Physics Letters, 2013, 102: 012108.ConferenceWang W J, He J, Zhang K Z, Sun L, Yang P X, Chu J H
Characterization of Cu0.9In0.9Zn0.2Se2 Thin Films Prepared by One-step RF Magnetron Sputtering Process
proceedings of the Proceedings of the 2013 International Conference on Material Science and Environmental Engineering, Wuhan, PEOPLES R CHINA, F Aug 17-18, 2013. Destech Publications, Inc.ConferenceWang W J, He J, Zhang K Z, Sun L, Yang P X, Chu J H
Characterization of Cu0.9In0.9Zn0.2Se2 Thin Films Prepared by One-step RF Magnetron Sputtering Process
proceedings of the Proceedings of the 2013 International Conference on Material Science and Environmental Engineering, Wuhan, PEOPLES R CHINA, F Aug 17-18, 2013. Destech Publications, Inc.ConferenceWang W J, He J, Zhang K Z, Sun L, Yang P X, Chu J H
Characterization of Cu0.9In0.9Zn0.2Se2 Thin Films Prepared by One-step RF Magnetron Sputtering Process
proceedings of the Proceedings of the 2013 International Conference on Material Science and Environmental Engineering, Wuhan, PEOPLES R CHINA, F Aug 17-18, 2013. Destech Publications, Inc.Journal ArticleTu Y, Tang Z, Zhao X G, Chen Y, Zhu Z Q, Chu J H, Fang J C
A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application
Applied Physics Letters, 2013, 103: 072103.Journal ArticleTu Y, Tang Z, Zhao X G, Chen Y, Zhu Z Q, Chu J H, Fang J C
A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application
Applied Physics Letters, 2013, 103: 072103.Journal ArticleTu Y, Tang Z, Zhao X G, Chen Y, Zhu Z Q, Chu J H, Fang J C
A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application
Applied Physics Letters, 2013, 103: 072103.Journal ArticleTong J C, Huang Z M, Hou Y, Zhang L B, Zhou W, Huang J G, Chu J H
Development of a Multiband Passive Scanning Imager
Journal of Infrared Millimeter and Terahertz Waves, 2013, 34: 267-276.Journal ArticleTong J C, Huang Z M, Hou Y, Zhang L B, Zhou W, Huang J G, Chu J H
Development of a Multiband Passive Scanning Imager
Journal of Infrared Millimeter and Terahertz Waves, 2013, 34: 267-276.Journal ArticleTong J C, Huang Z M, Hou Y, Zhang L B, Zhou W, Huang J G, Chu J H
Development of a Multiband Passive Scanning Imager
Journal of Infrared Millimeter and Terahertz Waves, 2013, 34: 267-276.Journal ArticleTian J J, Gao H P, Deng H M, Sun L, Kong H, Yang P X, Chu J H
Structural, magnetic and optical properties of Ni-doped TiO2 thin films deposited on silicon(100) substrates by sol-gel process
Journal of Alloys and Compounds, 2013, 581: 318-323.Journal ArticleTian J J, Gao H P, Deng H M, Sun L, Kong H, Yang P X, Chu J H
Structural, magnetic and optical properties of Ni-doped TiO2 thin films deposited on silicon(100) substrates by sol-gel process
Journal of Alloys and Compounds, 2013, 581: 318-323.Journal ArticleTian J J, Gao H P, Deng H M, Sun L, Kong H, Yang P X, Chu J H
Structural, magnetic and optical properties of Ni-doped TiO2 thin films deposited on silicon(100) substrates by sol-gel process
Journal of Alloys and Compounds, 2013, 581: 318-323.Journal ArticleTian B B, Zhao X L, Liu B L, Wang J L, Han L, Sun J L, Meng X J, Chu J H
Abnormal polarization switching of relaxor terpolymer films at low temperatures
Applied Physics Letters, 2013, 102: 072906.Journal ArticleTian B B, Zhao X L, Liu B L, Wang J L, Han L, Sun J L, Meng X J, Chu J H
Abnormal polarization switching of relaxor terpolymer films at low temperatures
Applied Physics Letters, 2013, 102: 072906.Journal ArticleTian B B, Zhao X L, Liu B L, Wang J L, Han L, Sun J L, Meng X J, Chu J H
Abnormal polarization switching of relaxor terpolymer films at low temperatures
Applied Physics Letters, 2013, 102: 072906.Journal ArticleTian B B, Chen Z H, Jiang A Q, Zhao X L, Liu B L, Wang J L, Han L, Sun S, Sun J L, Meng X J, Chu J H
The creep process of the domain switching in poly(vinylidene fluoride-trifluoroethylene) ferroelectric thin films
Applied Physics Letters, 2013, 103: 042909.Journal ArticleTian B B, Chen Z H, Jiang A Q, Zhao X L, Liu B L, Wang J L, Han L, Sun S, Sun J L, Meng X J, Chu J H
The creep process of the domain switching in poly(vinylidene fluoride-trifluoroethylene) ferroelectric thin films
Applied Physics Letters, 2013, 103: 042909.Journal ArticleTian B B, Chen Z H, Jiang A Q, Zhao X L, Liu B L, Wang J L, Han L, Sun S, Sun J L, Meng X J, Chu J H
The creep process of the domain switching in poly(vinylidene fluoride-trifluoroethylene) ferroelectric thin films
Applied Physics Letters, 2013, 103: 042909.Journal ArticleTao B R, Miao F J, Chu J H
Structure and photoelectrochemical properties of silicon microstructures arrays
Electrochimica Acta, 2013, 108: 248-252.Journal ArticleTao B R, Miao F J, Chu J H
Structure and photoelectrochemical properties of silicon microstructures arrays
Electrochimica Acta, 2013, 108: 248-252.Journal ArticleTao B R, Miao F J, Chu J H
Structure and photoelectrochemical properties of silicon microstructures arrays
Electrochimica Acta, 2013, 108: 248-252.Journal ArticleTang Z, Sun F, Han B, Yu K, Zhu Z Q, Chu J H
Tuning Interlayer Exchange Coupling of Co-Doped TiO2/VO2 Multilayers via Metal-Insulator Transition
Physical Review Letters, 2013, 111: 107203.Journal ArticleTang Z, Sun F, Han B, Yu K, Zhu Z Q, Chu J H
Tuning Interlayer Exchange Coupling of Co-Doped TiO2/VO2 Multilayers via Metal-Insulator Transition
Physical Review Letters, 2013, 111: 107203.Journal ArticleTang Z, Sun F, Han B, Yu K, Zhu Z Q, Chu J H
Tuning Interlayer Exchange Coupling of Co-Doped TiO2/VO2 Multilayers via Metal-Insulator Transition
Physical Review Letters, 2013, 111: 107203.Journal ArticleSun Q, Deng H M, Yang P X, Chu J H
The influence of La content on photovoltaic effect of PZT thin films
Journal of Infrared and Millimeter Waves, 2013, 32: 128-131.Journal ArticleSun Q, Deng H M, Yang P X, Chu J H
The influence of La content on photovoltaic effect of PZT thin films
Journal of Infrared and Millimeter Waves, 2013, 32: 128-131.Journal ArticleSun Q, Deng H M, Yang P X, Chu J H
The influence of La content on photovoltaic effect of PZT thin films
Journal of Infrared and Millimeter Waves, 2013, 32: 128-131.Journal ArticleShen Y D, Li Y W, Jiang K, Zhang J Z, Duan Z H, Hu Z G, Chu J H
Fabrication and temperature-dependent band gap shrinkage of alpha-phase Bi2O3 thin films grown by atomic layer deposition method
European Physical Journal-Applied Physics, 2013, 62: 20303.Journal ArticleShen Y D, Li Y W, Jiang K, Zhang J Z, Duan Z H, Hu Z G, Chu J H
Fabrication and temperature-dependent band gap shrinkage of alpha-phase Bi2O3 thin films grown by atomic layer deposition method
European Physical Journal-Applied Physics, 2013, 62: 20303.Journal ArticleShen Y D, Li Y W, Jiang K, Zhang J Z, Duan Z H, Hu Z G, Chu J H
Fabrication and temperature-dependent band gap shrinkage of alpha-phase Bi2O3 thin films grown by atomic layer deposition method
European Physical Journal-Applied Physics, 2013, 62: 20303.ConferenceShan C, Huang T, Hu Z, Chu J H
Growth and physical properties of Ba1-xLaxSnO3 films grown on SrTiO3 substrates by sol-gel method
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013 2013.ConferenceShan C, Huang T, Hu Z, Chu J H
Growth and physical properties of Ba1-xLaxSnO3 films grown on SrTiO3 substrates by sol-gel method
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013 2013.ConferenceShan C, Huang T, Hu Z, Chu J H
Growth and physical properties of Ba1-xLaxSnO3 films grown on SrTiO3 substrates by sol-gel method
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013 2013.Journal ArticlePeng L, Deng H M, Tian J J, Ren Q, Peng C, Huang Z P, Yang P X, Chu J H
Influence of Co doping on structural, optical and magnetic properties of BiFeO3 films deposited on quartz substrates by sol-gel method
Applied Surface Science, 2013, 268: 146-150.Journal ArticlePeng L, Deng H M, Tian J J, Ren Q, Peng C, Huang Z P, Yang P X, Chu J H
Influence of Co doping on structural, optical and magnetic properties of BiFeO3 films deposited on quartz substrates by sol-gel method
Applied Surface Science, 2013, 268: 146-150.Journal ArticlePeng L, Deng H M, Tian J J, Ren Q, Peng C, Huang Z P, Yang P X, Chu J H
Influence of Co doping on structural, optical and magnetic properties of BiFeO3 films deposited on quartz substrates by sol-gel method
Applied Surface Science, 2013, 268: 146-150.Journal ArticlePeng C, Yang P X, Wu L C, Song Z T, Rao F, Song S N, Zhou D, Chu J H
Nitrogen-doped Ge3Te2 materials with self-restricted active region for low power phase-change memory
Journal of Applied Physics, 2013, 113: 034310.Journal ArticlePeng C, Yang P X, Wu L C, Song Z T, Rao F, Song S N, Zhou D, Chu J H
Nitrogen-doped Ge3Te2 materials with self-restricted active region for low power phase-change memory
Journal of Applied Physics, 2013, 113: 034310.Journal ArticlePeng C, Yang P X, Wu L C, Song Z T, Rao F, Song S N, Zhou D, Chu J H
Nitrogen-doped Ge3Te2 materials with self-restricted active region for low power phase-change memory
Journal of Applied Physics, 2013, 113: 034310.Journal ArticlePeng C, Wu L C, Rao F, Song Z T, Lv S L, Zhou X L, Du X F, Cheng Y, Yang P X, Chu J H
A simple method used to evaluate phase-change materials based on focused-ion beam technique
Applied Physics Letters, 2013, 102: 203510.Journal ArticlePeng C, Wu L C, Rao F, Song Z T, Lv S L, Zhou X L, Du X F, Cheng Y, Yang P X, Chu J H
A simple method used to evaluate phase-change materials based on focused-ion beam technique
Applied Physics Letters, 2013, 102: 203510.Journal ArticlePeng C, Wu L C, Rao F, Song Z T, Lv S L, Zhou X L, Du X F, Cheng Y, Yang P X, Chu J H
A simple method used to evaluate phase-change materials based on focused-ion beam technique
Applied Physics Letters, 2013, 102: 203510.ConferenceOuyang C, Zhou W, Wu J, Chu J H, Huang Z
Fabrication and performance of uncooled infrared bolometer based on Mn1.56Co0.96Ni0.48O4 thin films
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013.ConferenceOuyang C, Zhou W, Wu J, Chu J H, Huang Z
Fabrication and performance of uncooled infrared bolometer based on Mn1.56Co0.96Ni0.48O4 thin films
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013.ConferenceOuyang C, Zhou W, Wu J, Chu J H, Huang Z
Fabrication and performance of uncooled infrared bolometer based on Mn1.56Co0.96Ni0.48O4 thin films
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013.Journal ArticleMiao F J, Wang Z, Tao B R, Chu J H, Chu P K
Composition dependence of structural, optical, and photoelectrochemical properties of nanocrystalline neodymium-doped titania photocatalyst
Electrochimica Acta, 2013, 112: 32-36.Journal ArticleMiao F J, Wang Z, Tao B R, Chu J H, Chu P K
Composition dependence of structural, optical, and photoelectrochemical properties of nanocrystalline neodymium-doped titania photocatalyst
Electrochimica Acta, 2013, 112: 32-36.Journal ArticleMiao F J, Wang Z, Tao B R, Chu J H, Chu P K
Composition dependence of structural, optical, and photoelectrochemical properties of nanocrystalline neodymium-doped titania photocatalyst
Electrochimica Acta, 2013, 112: 32-36.Journal ArticleMiao F J, Tao B R, Jiang K, Zhang J Z, Li W W, Hu Z G, Chu J H, Chu P K
Photoluminescence properties of ordered Bi4-xNdxTi3O12 matrix supported by 3-dimensional silicon microchannel plate
Journal of Physics D-Applied Physics, 2013, 46: 315105.Journal ArticleMiao F J, Tao B R, Jiang K, Zhang J Z, Li W W, Hu Z G, Chu J H, Chu P K
Photoluminescence properties of ordered Bi4-xNdxTi3O12 matrix supported by 3-dimensional silicon microchannel plate
Journal of Physics D-Applied Physics, 2013, 46: 315105.Journal ArticleMiao F J, Tao B R, Jiang K, Zhang J Z, Li W W, Hu Z G, Chu J H, Chu P K
Photoluminescence properties of ordered Bi4-xNdxTi3O12 matrix supported by 3-dimensional silicon microchannel plate
Journal of Physics D-Applied Physics, 2013, 46: 315105.Journal ArticleMiao F J, Tao B R, Chu J H
Nonenzymatic Alkaline Direct Glucose Fuel Cell With a Silicon Microchannel Plate Supported Electrocatalytic Electrode
Journal of Fuel Cell Science and Technology, 2013, 10: 041003.Journal ArticleMiao F J, Tao B R, Chu J H
Nonenzymatic Alkaline Direct Glucose Fuel Cell With a Silicon Microchannel Plate Supported Electrocatalytic Electrode
Journal of Fuel Cell Science and Technology, 2013, 10: 041003.Journal ArticleMiao F J, Tao B R, Chu J H
Nonenzymatic Alkaline Direct Glucose Fuel Cell With a Silicon Microchannel Plate Supported Electrocatalytic Electrode
Journal of Fuel Cell Science and Technology, 2013, 10: 041003.ConferenceMa J, Liang Y, Yao N, Zhu X, Jiang J, Chu J H
Effects of post annealing on structural, electrical and optical properties of ZnO:Al thin films prepared by RF magnetron sputtering
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013, 2013.ConferenceMa J, Liang Y, Yao N, Zhu X, Jiang J, Chu J H
Effects of post annealing on structural, electrical and optical properties of ZnO:Al thin films prepared by RF magnetron sputtering
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013, 2013.ConferenceMa J, Liang Y, Yao N, Zhu X, Jiang J, Chu J H
Effects of post annealing on structural, electrical and optical properties of ZnO:Al thin films prepared by RF magnetron sputtering
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013, 2013.Journal ArticleLiu X Z, Yu G, Wei L M, Lin T, Xu Y G, Yang J R, Wei Y F, Guo S L, Chu J H, Rowell N L, Lockwood D J
The nonlinear Rashba effect in Hg0.77Cd0.23Te inversion layers probed by weak antilocalization analysis
Journal of Applied Physics, 2013, 113: 013704.Journal ArticleLiu X Z, Yu G, Wei L M, Lin T, Xu Y G, Yang J R, Wei Y F, Guo S L, Chu J H, Rowell N L, Lockwood D J
The nonlinear Rashba effect in Hg0.77Cd0.23Te inversion layers probed by weak antilocalization analysis
Journal of Applied Physics, 2013, 113: 013704.Journal ArticleLiu X Z, Yu G, Wei L M, Lin T, Xu Y G, Yang J R, Wei Y F, Guo S L, Chu J H, Rowell N L, Lockwood D J
The nonlinear Rashba effect in Hg0.77Cd0.23Te inversion layers probed by weak antilocalization analysis
Journal of Applied Physics, 2013, 113: 013704.Journal ArticleLiu X Z, Xu Y G, Yu G, Wei L M, Lin T, Guo S L, Chu J H, Zhou W Z, Zhang Y G, Lockwood D J
The effective g-factor in In0.53Ga0.47As/In0.52Al0.48As quantum well investigated by magnetotransport measurement
Journal of Applied Physics, 2013, 113: 033704.Journal ArticleLiu X Z, Xu Y G, Yu G, Wei L M, Lin T, Guo S L, Chu J H, Zhou W Z, Zhang Y G, Lockwood D J
The effective g-factor in In0.53Ga0.47As/In0.52Al0.48As quantum well investigated by magnetotransport measurement
Journal of Applied Physics, 2013, 113: 033704.Journal ArticleLiu X Z, Xu Y G, Yu G, Wei L M, Lin T, Guo S L, Chu J H, Zhou W Z, Zhang Y G, Lockwood D J
The effective g-factor in In0.53Ga0.47As/In0.52Al0.48As quantum well investigated by magnetotransport measurement
Journal of Applied Physics, 2013, 113: 033704.ConferenceLiu T, Deng H, Yang P, Zhang J, Cao H, He J, Chu J H
Growth and Characterization of Sb2Te3 Thin Film Deposited by Pulsed Laser Method
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013, 2013.ConferenceLiu T, Deng H, Yang P, Zhang J, Cao H, He J, Chu J H
Growth and Characterization of Sb2Te3 Thin Film Deposited by Pulsed Laser Method
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013, 2013.ConferenceLiu T, Deng H, Yang P, Zhang J, Cao H, He J, Chu J H
Growth and Characterization of Sb2Te3 Thin Film Deposited by Pulsed Laser Method
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013, 2013.Journal ArticleLiu J, Bai W, Yang J, Xu W F, Zhang Y Y, Lin T, Meng X J, Duan C G, Tang X D, Chu J H
The Cr-substitution concentration dependence of the structural, electric and magnetic behaviors for Aurivillius Bi5Ti3FeO15 multiferroic ceramics
Journal of Applied Physics, 2013, 114: 234101.Journal ArticleLiu J, Bai W, Yang J, Xu W F, Zhang Y Y, Lin T, Meng X J, Duan C G, Tang X D, Chu J H
The Cr-substitution concentration dependence of the structural, electric and magnetic behaviors for Aurivillius Bi5Ti3FeO15 multiferroic ceramics
Journal of Applied Physics, 2013, 114: 234101.Journal ArticleLiu J, Bai W, Yang J, Xu W F, Zhang Y Y, Lin T, Meng X J, Duan C G, Tang X D, Chu J H
The Cr-substitution concentration dependence of the structural, electric and magnetic behaviors for Aurivillius Bi5Ti3FeO15 multiferroic ceramics
Journal of Applied Physics, 2013, 114: 234101.Journal ArticleLiu A, Han H, Wei L, Wang P, Lin F, Shi W, Meng X, Sun J, Chu J H, Jing C
Microstructure and electrical properties Of PMNT thin films prepared by a modified sol-gel process
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013, 2013.Journal ArticleLiu A, Han H, Wei L, Wang P, Lin F, Shi W, Meng X, Sun J, Chu J H, Jing C
Microstructure and electrical properties Of PMNT thin films prepared by a modified sol-gel process
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013, 2013.Journal ArticleLiu A, Han H, Wei L, Wang P, Lin F, Shi W, Meng X, Sun J, Chu J H, Jing C
Microstructure and electrical properties Of PMNT thin films prepared by a modified sol-gel process
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013, 2013.Journal ArticleJing C B, Zhang C J, Chu J H
Formation and characterization of nanoporous structures on surface of LPD-derived GeO2 ceramic film
Journal of Porous Materials, 2013, 20: 359-365.Journal ArticleJing C B, Zhang C J, Chu J H
Formation and characterization of nanoporous structures on surface of LPD-derived GeO2 ceramic film
Journal of Porous Materials, 2013, 20: 359-365.Journal ArticleJing C B, Zhang C J, Chu J H
Formation and characterization of nanoporous structures on surface of LPD-derived GeO2 ceramic film
Journal of Porous Materials, 2013, 20: 359-365.ConferenceJing C, Guo H, Bai W, Hu Z, Yang J, Yang P, Chu J H, Liu A, Lin F
Structure and magnetic properties of Ge99.04Mn0.96 thin film prepared by thermal evaporation of Mn doped GeO2 ceramic film under hydrogen atmosphere
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, China, F Sep 20-23, 2013, 2013.ConferenceJiang L, Meng X J, Zhao X L, Tian B B, Liu B L, Yuan G L, Wang J L, Sun J L, Chu J H
The evolution of activation field with temperature in ferroelectric copolymer of vinylidene fluoride and trifluoroethylene films
proceedings of the 3rd International Conference on Chemical Engineering and Advanced Materials (CEAM 2013), Guangzhou, PEOPLES R CHINA, F Jul 06-07, 2013.Journal ArticleHuo X X, Peng X Y, Liu W, Mo X L, Chen G R, Wang S L, Chu J H
Comparison between the effects of CdCl2 heat treatment on CdTe films prepared by RF magnetron sputtering and close spaced sublimation methods
Journal of Materials Science-Materials in Electronics, 2013, 24: 2479-2484.Journal ArticleHuang J G, Lu J X, Zhou W, Tong J C, Huang Z M, Chu J H
Investigation of high power terahertz emission in gap crystal based on collinear difference frequency generation
Acta Physica Sinica, 2013, 62: 120704.Journal ArticleHuang J G, Huang Z M, Tong J C, Ouyang C, Chu J H, Andreev Y, Kokh K, Lanskii G
Shaiduko A. Intensive terahertz emission from GaSe0.91S0.09 under collinear difference frequency generation
Applied Physics Letters, 2013, 103: 081104.Journal ArticleHong X K, Liu Y S, Feng J F, Chu J H
Thermal spin current through a double quantum dot molecular junction in the Coulomb blockade regime
Journal of Applied Physics, 2013, 114: 144309.Journal ArticleHe J, Sun L, Zhang K Z, Wang W J, Jiang J C, Chen Y, Yang P X, Chu J H
Effect of post-sulfurization on the composition, structure and optical properties of Cu2ZnSnS4 thin films deposited by sputtering from a single quaternary target
Applied Surface Science, 2013, 264: 133-138.Journal ArticleHan M J, Duan Z H, Zhang J Z, Zhang S, Li Y W, Hu Z G, Chu J H
Electronic transition and electrical transport properties of delafossite CuCr1-xMgxO2 (0 <= x <= 12%) films prepared by the sol-gel method: A composition dependence study
Journal of Applied Physics, 2013, 114: 163526.Journal ArticleGong S J, Duan C G, Zhu Y, Zhu Z Q, Chu J H
Controlling Rashba spin splitting in Au(111) surface states through electric field
Physical Review B, 2013, 87: 035403.Journal ArticleGong S J, Ding H C, Zhu W J, Duan C G, Zhu Z Q, Chu J H
A new pathway towards all-electric spintronics: electric-field control of spin states through surface/interface effects
Science China-Physics Mechanics & Astronomy, 2013, 56: 232-244.Journal ArticleGe J, Jiang J C, Hu G J, Zhang X L, Zuo S H, Yang L H, Ma J H, Cao M, Yang P X, Chu J H
Effect of Na2S2O3 center dot 5H(2)O concentration on the properties of Cu-2 ZnSn(S, Se)(4) thin films fabricated by selenization of co-electroplated Cu-Zn-Sn-S precursors
Journal of Infrared and Millimeter Waves, 2013, 32: 289.ConferenceGao Y Q, Huang Z M, Hou Y, Wu J, Chu J H
Optical and electrical properties of Mn1.56Co0.96Ni0.48O4 thin films
proceedings of the Eighth International Conference on Thin Film Physics and Applications (TFPA13), Shanghai, China, F 2013, 2013 SPIE.Journal ArticleGao Y C, Duan C G, Tang X D, Hu Z G, Yang P X, Zhu Z Q, Chu J H
A first-principles study on the intrinsic asymmetric ferroelectricity of the SrTiO3-BaTiO3-CaTiO3 tricolor superlattice at the nanoscale
Journal of Physics-Condensed Matter, 2013, 25: 165901.Journal ArticleGao K H, Wang Q W, Lin T, Li Z Q, Zhang X H, Xu J, Deng H Y, Chu J H
Large magnetoresistance in (In, Zn)As/InAs p-n junction
Epl, 2013, 102: 37009.Journal ArticleGao K H, Lin T, Liu X D, Zhang X H, Li X N, Wu J, Liu Y F, Wang X F, Chen Y W, Ni B, Dai N, Chu J H
Low temperature electrical transport properties of F-doped SnO2 films
Solid State Communications, 2013, 157: 49-53.Journal ArticleGao H P, Tian J J, Kong H, Yang P X, Zhang W F, Chu J H
Optical and magnetic properties of mixed crystal Ti0.95Ni0.05O2 films deposited on Si substrates by sol-gel method
Surface & Coatings Technology, 2013, 228: 162-166.Journal ArticleDuan Z H, Hu Z G, Jiang K, Li Y W, Wang G S, Dong X L, Chu J H
Temperature-dependent dielectric functions and interband critical points of relaxor lead hafnate-modified PbSc1/2Ta1/2O3 ferroelectric ceramics by spectroscopic ellipsometry
Applied Physics Letters, 2013, 102: 151908.Journal ArticleCong R, Hu G J, Yu G L, Chu J H, Dai N
Electrical and optical performance of PbZr0.4Ti0.6O3 optical microcavity derived from one single chemical solution
Journal of Applied Physics, 2013, 114: 044107.Journal ArticleCong R, Hu G J, Hong X K, Yu G L, Chu J H, Dai N
Microstructure and Optical Property in an Irregular Multilayer Comprising Ferroelectric and Paraelectric Materials
Journal of the American Ceramic Society, 2013, 96: 355-357.Journal ArticleChen X, Jiang P P, Duan Z H, Hu Z G, Chen X F, Wang G S, Dong X L, Chu J H
The A-site driven phase transition procedure of (Pb0.97La0.02)(Zr0.42Sn0.40Ti0.18)O-3 ceramics: An evidence from electronic structure variation
Applied Physics Letters, 2013, 103: 192910.Journal ArticleChen X, Hu Z G, Duan Z H, Chen X F, Wang G S, Dong X L, Chu J H
Effects from A-site substitution on morphotropic phase boundary and phonon modes of (Pb1-1.5xLax)(Zr0.42Sn0.40T0.18)O-3 ceramics by temperature dependent Raman spectroscopy
Journal of Applied Physics, 2013, 114: 043507.Journal ArticleChen G, Bai W, Sun L, Wu J, Ren Q, Xu W F, Yang J, Meng X J, Tang X D, Duan C G, Chu J H
Processing optimization and sintering time dependent magnetic and optical behaviors of Aurivillius Bi5Ti3FeO15 ceramics
Journal of Applied Physics, 2013, 113: 034901.Journal ArticleCao H, Chu J H, Wang S L, Wu Y H, Zhang C J
Effects of deposition parameters on Cd1-xZnx Te films prepared by RF magnetron sputtering
Journal of Infrared and Millimeter Waves, 2013, 32: 97-101.Journal ArticleHe, C. L.; Li, J. F.; Wu, X.; Chen, P.; Zhao, J.; Yin, K. B.; Cheng, M.; Yang, W.; Xie, G. B.; Wang, D. M.; Liu, D. H.; Yang, R.; Shi, D. X.; Li, Z. Y.; Sun, L. T.; Zhang, G. Y.
Tunable Electroluminescence in Planar Graphene/SiO2 Memristors
In: Advanced Materials, vol. 25, no. 39, pp. 5593-+, 2013, ISSN: 0935-9648.Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.
@article{RN18, title = {Tunable Electroluminescence in Planar Graphene/SiO2 Memristors}, author = {C. L. He and J. F. Li and X. Wu and P. Chen and J. Zhao and K. B. Yin and M. Cheng and W. Yang and G. B. Xie and D. M. Wang and D. H. Liu and R. Yang and D. X. Shi and Z. Y. Li and L. T. Sun and G. Y. Zhang}, doi = {10.1002/adma.201302447}, issn = {0935-9648}, year = {2013}, date = {2013-01-01}, urldate = {2013-01-01}, journal = {Advanced Materials}, volume = {25}, number = {39}, pages = {5593-+}, abstract = {Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.}, keywords = {原位电镜}, pubstate = {published}, tppubtype = {article} }Journal ArticleLiu, Xiaofei; Xu, Tao; Wu, Xing; Zhang, Zhuhua; Yu, Jin; Qiu, Hao; Hong, Jin-Hua; Jin, Chuan-Hong; Li, Ji-Xue; Wang, Xin-Ran; Sun, Li-Tao; Guo, Wanlin
Top-Down Fabrication of Sub-Nanometre Semiconducting Nanoribbons Derived From Molybdenum Disulfide Sheets
In: Nature Communications, vol. 4, 2013. ISSN: 2041-1723.Developments in semiconductor technology are propelling the dimensions of devices down to 10 nm, but facing great challenges in manufacture at the sub-10 nm scale. Nanotechnology can fabricate nanoribbons from two-dimensional atomic crystals, such as graphene, with widths below the 10 nm threshold, but their geometries and properties have been hard to control at this scale. Here we find that robust ultrafine molybdenum-sulfide ribbons with a uniform width of 0.35nm can be widely formed between holes created in a MoS2 sheet under electron irradiation. In situ high-resolution transmission electron microscope characterization, combined with first-principles calculations, identifies the sub-1 nm ribbon as a Mo5S4 crystal derived from MoS2, through a spontaneous phase transition. Further first-principles investigations show that the Mo5S4 ribbon has a band gap of 0.77 eV, a Young's modulus of 300GPa and can demonstrate 9% tensile strain before fracture. The results show a novel top-down route for controllable fabrication of functional building blocks for sub-nanometre electronics.
@article{RN1, title = {Top-Down Fabrication of Sub-Nanometre Semiconducting Nanoribbons Derived From Molybdenum Disulfide Sheets}, author = {Xiaofei Liu and Tao Xu and Xing Wu and Zhuhua Zhang and Jin Yu and Hao Qiu and Jin-Hua Hong and Chuan-Hong Jin and Ji-Xue Li and Xin-Ran Wang and Li-Tao Sun and Wanlin Guo}, doi = {10.1038/ncomms2803}, issn = {2041-1723}, year = {2013}, date = {2013-01-01}, urldate = {2013-01-01}, journal = {Nature Communications}, volume = {4}, abstract = {Developments in semiconductor technology are propelling the dimensions of devices down to 10 nm, but facing great challenges in manufacture at the sub-10 nm scale. Nanotechnology can fabricate nanoribbons from two-dimensional atomic crystals, such as graphene, with widths below the 10 nm threshold, but their geometries and properties have been hard to control at this scale. Here we find that robust ultrafine molybdenum-sulfide ribbons with a uniform width of 0.35nm can be widely formed between holes created in a MoS2 sheet under electron irradiation. In situ high-resolution transmission electron microscope characterization, combined with first-principles calculations, identifies the sub-1 nm ribbon as a Mo5S4 crystal derived from MoS2, through a spontaneous phase transition. Further first-principles investigations show that the Mo5S4 ribbon has a band gap of 0.77 eV, a Young's modulus of 300GPa and can demonstrate 9% tensile strain before fracture. The results show a novel top-down route for controllable fabrication of functional building blocks for sub-nanometre electronics.}, keywords = {原位电镜}, pubstate = {published}, tppubtype = {article} }Journal ArticleLiu, Y. L.; Nan, H. Y.; Wu, X.; Pan, W.; Wang, W. H.; Bai, J.; Zhao, W. W.; Sun, L. T.; Wang, X. R.; Ni, Z. H.
Layer-by-Layer Thinning of MoS2 by Plasma
In: ACS Nano, vol. 7, no. 5, pp. 4202-4209, 2013, ISSN: 1936-0851.The electronic structures of two-dimensional materials are strongly dependent on their thicknesses; for example, there is an indirect to direct band gap transition from multilayer to single-layer MoS2. A simple, efficient, and nondestructive way to control the thickness of MoS2 is highly desirable for the study of thickness-dependent properties as well as for applications. Here, we present layer-by-layer thinning of MoS2 nanosheets down to monolayer by using Ar+ plasma. Atomic force microscopy, high-resolution transmission electron microscopy, optical contrast, Raman, and photoluminescence spectra suggest that the top layer MoS2 is totally removed by plasma while the bottom layer remains almost unaffected. The evolution of Raman and photoluminescence spectra of MoS2 with thickness change is also investigated. Finally, we demonstrate that this method can be used to prepare two-dimensional heterostructures with periodical single-layer and bilayer MoS2. The plasma thinning of MoS2 is very reliable (with almost 100% success rate), can be easily scaled up, and Is compatible with standard semiconductor process to generate heterostructures/patterns at nanometer scale, which may bring out Interesting properties and new physics.
<Go to ISI>://WOS:000319856300057
@article{RN19, title = {Layer-by-Layer Thinning of MoS2 by Plasma}, author = {Y. L. Liu and H. Y. Nan and X. Wu and W. Pan and W. H. Wang and J. Bai and W. W. Zhao and L. T. Sun and X. R. Wang and Z. H. Ni}, url = {<Go to ISI>://WOS:000319856300057}, doi = {10.1021/nn400644t}, issn = {1936-0851}, year = {2013}, date = {2013-01-01}, urldate = {2013-01-01}, journal = {ACS Nano}, volume = {7}, number = {5}, pages = {4202-4209}, abstract = {The electronic structures of two-dimensional materials are strongly dependent on their thicknesses; for example, there is an indirect to direct band gap transition from multilayer to single-layer MoS2. A simple, efficient, and nondestructive way to control the thickness of MoS2 is highly desirable for the study of thickness-dependent properties as well as for applications. Here, we present layer-by-layer thinning of MoS2 nanosheets down to monolayer by using Ar+ plasma. Atomic force microscopy, high-resolution transmission electron microscopy, optical contrast, Raman, and photoluminescence spectra suggest that the top layer MoS2 is totally removed by plasma while the bottom layer remains almost unaffected. The evolution of Raman and photoluminescence spectra of MoS2 with thickness change is also investigated. Finally, we demonstrate that this method can be used to prepare two-dimensional heterostructures with periodical single-layer and bilayer MoS2. The plasma thinning of MoS2 is very reliable (with almost 100% success rate), can be easily scaled up, and Is compatible with standard semiconductor process to generate heterostructures/patterns at nanometer scale, which may bring out Interesting properties and new physics.}, keywords = {}, pubstate = {published}, tppubtype = {article} }ConferencePey, K. L.; Shubhakar, K.; Raghavan, N.; Wu, X.; Bosman, M.
Impact of Local Variations in High-k dielectric on Breakdown and Recovery Characteristics of Advanced Gate Stacks
2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) , 2013.@conference{RN72, title = {Impact of Local Variations in High-k dielectric on Breakdown and Recovery Characteristics of Advanced Gate Stacks}, author = {K. L. Pey and K. Shubhakar and N. Raghavan and X. Wu and M. Bosman}, doi = {10.1109/edssc.2013.6628192}, year = {2013}, date = {2013-01-01}, urldate = {2013-01-01}, booktitle = {2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) }, journal = {2013 IEEE International Conference of Electron Devices and Solid-state Circuits (EDSSC)}, pages = {2 pp.-2 pp.}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {conference} }Journal ArticleRaghavan, N.; Padovani, A.; Li, X.; Wu, X.; Lo, V. L.; Bosman, M.; Larcher, L.; Pey, K. L.
Resilience of Ultra-Thin Oxynitride Films to Percolative Wear-Out and Reliability Implications For High-Kappa Stacks at Low Voltage Stress
In: Journal of Applied Physics, vol. 114, no. 9, pp. 8, 2013. ISSN: 0021-8979.Localized progressive wear-out and degradation of ultra-thin dielectrics around the oxygen vacancy percolation path formed during accelerated time dependent dielectric breakdown tests is a well-known phenomenon documented for silicon oxynitride (SiON) based gate stacks in metal oxide semiconductor field effect transistors. This progressive or post breakdown stage involves an initial phase characterized by "digital" random telegraph noise fluctuations followed by the wear-out of the percolation path, which results in an änalog" increase in the leakage current, culminating in a thermal runaway and hard breakdown. The relative contribution of the digital and analog phases of degradation at very low voltage stress in ultra-thin SiON (16 angstrom) is yet to be fully investigated, which represents the core of this study. We investigate the wear-out process by combining electrical and physical analysis evidences with modeling and simulation results using Kinetic Monte Carlo defect generation and multi-phonon trap assisted tunneling (PTAT) models. We show that the transition from the digital to the analog regime is governed by a critical voltage (V-CRIT), which determines the reliability margin in the post breakdown phase. Our results have a significant impact on the post-breakdown operational reliability of SiON and advanced high-kappa-SiOx interfacial layer gate stacks, wherein the SiOx layer seems to be the weakest link for percolation event. (C) 2013 AIP Publishing LLC.
@article{RN22, title = {Resilience of Ultra-Thin Oxynitride Films to Percolative Wear-Out and Reliability Implications For High-Kappa Stacks at Low Voltage Stress}, author = {N. Raghavan and A. Padovani and X. Li and X. Wu and V. L. Lo and M. Bosman and L. Larcher and K. L. Pey}, doi = {10.1063/1.4819445}, issn = {0021-8979}, year = {2013}, date = {2013-01-01}, urldate = {2013-01-01}, journal = {Journal of Applied Physics}, volume = {114}, number = {9}, pages = {8}, abstract = {Localized progressive wear-out and degradation of ultra-thin dielectrics around the oxygen vacancy percolation path formed during accelerated time dependent dielectric breakdown tests is a well-known phenomenon documented for silicon oxynitride (SiON) based gate stacks in metal oxide semiconductor field effect transistors. This progressive or post breakdown stage involves an initial phase characterized by "digital" random telegraph noise fluctuations followed by the wear-out of the percolation path, which results in an änalog" increase in the leakage current, culminating in a thermal runaway and hard breakdown. The relative contribution of the digital and analog phases of degradation at very low voltage stress in ultra-thin SiON (16 angstrom) is yet to be fully investigated, which represents the core of this study. We investigate the wear-out process by combining electrical and physical analysis evidences with modeling and simulation results using Kinetic Monte Carlo defect generation and multi-phonon trap assisted tunneling (PTAT) models. We show that the transition from the digital to the analog regime is governed by a critical voltage (V-CRIT), which determines the reliability margin in the post breakdown phase. Our results have a significant impact on the post-breakdown operational reliability of SiON and advanced high-kappa-SiOx interfacial layer gate stacks, wherein the SiOx layer seems to be the weakest link for percolation event. (C) 2013 AIP Publishing LLC.}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }ConferenceRaghavan, N.; Padovani, A.; Wu, X.; Shubhakar, K.; Bosman, M.; Larcher, L.; Pey, K. L.
The Buffering Role of High-Kappa in Post Breakdown Degradation Immunity of Advanced Dual Layer Dielectric Gate Stacks
2013 IEEE International Reliability Physics Symposium (IRPS), 2013.@conference{RN73, title = {The Buffering Role of High-Kappa in Post Breakdown Degradation Immunity of Advanced Dual Layer Dielectric Gate Stacks}, author = {N. Raghavan and A. Padovani and X. Wu and K. Shubhakar and M. Bosman and L. Larcher and K. L. Pey}, doi = {10.1109/irps.2013.6532020}, year = {2013}, date = {2013-01-01}, urldate = {2013-01-01}, booktitle = {2013 IEEE International Reliability Physics Symposium (IRPS)}, journal = {2013 IEEE International Reliability Physics Symposium (IRPS)}, pages = {5A.3.1-8}, keywords = {可靠性}, pubstate = {published}, tppubtype = {conference} }Journal ArticleRaghavan, Nagarajan; Wu, Xing; Bosman, Michel; Pey, Kin Leong.
Feasibility of SILC Recovery in Sub-10-angstrom EOT Advanced Metal Gate-High-kappa Stacks
In: IEEE Electron Device Letters, vol. 34, no. 8, pp. 1053-1055, 2013. ISSN: 0741-3106.@article{RN69, title = {Feasibility of SILC Recovery in Sub-10-angstrom EOT Advanced Metal Gate-High-kappa Stacks}, author = {Nagarajan Raghavan and Xing Wu and Michel Bosman and Kin Leong Pey}, doi = {10.1109/led.2013.2268246}, issn = {0741-3106}, year = {2013}, date = {2013-01-01}, urldate = {2013-01-01}, journal = {IEEE Electron Device Letters}, volume = {34}, number = {8}, pages = {1053-1055}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }ConferenceSun, J.; Wu, X.; Liu, Q.; Liu, M.; Sun, L. T.
Real Time Observation of Nanoscale Multiple Conductive Filaments in RRAM by Using Advanced In-Situ TEM
Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, Ieee, 2013, ISBN: 978-1-4799-1241-4.In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the ZrO 2-based device. Using in-situ transmission electron microscopy, we observe in real time that multiple conductive filaments (CFs) are formed across the ZrO 2 layer between top electrode and bottom electrodes after forming. Various top electrode materials have been used, such as Cu, Ag, and Ni. Contrary to common belief, it is found that CF growth begins at the anode, rather than having to reach the cathode and grow backwards. Energy-dispersive X-ray spectroscopy results confirm that metal from the top electrode is the main composition of the CFs.
@conference{RN38, title = {Real Time Observation of Nanoscale Multiple Conductive Filaments in RRAM by Using Advanced In-Situ TEM}, author = {J. Sun and X. Wu and Q. Liu and M. Liu and L. T. Sun}, doi = {10.1109/ipfa.2013.6599223}, isbn = {978-1-4799-1241-4}, year = {2013}, date = {2013-01-01}, urldate = {2013-01-01}, booktitle = {Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits}, pages = {560-562}, publisher = {Ieee}, abstract = {In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the ZrO 2-based device. Using in-situ transmission electron microscopy, we observe in real time that multiple conductive filaments (CFs) are formed across the ZrO 2 layer between top electrode and bottom electrodes after forming. Various top electrode materials have been used, such as Cu, Ag, and Ni. Contrary to common belief, it is found that CF growth begins at the anode, rather than having to reach the cathode and grow backwards. Energy-dispersive X-ray spectroscopy results confirm that metal from the top electrode is the main composition of the CFs.}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {conference} }Journal ArticleXu, F.; Chen, J.; Wu, X.; Zhang, Y.; Wang, Y. X.; Sun, J.; Bi, H. C.; Lei, W.; Ni, Y. R.; Sun, L. T.
Graphene Scaffolds Enhanced Photogenerated Electron Transport in ZnO Photoanodes for High-Efficiency Dye-Sensitized Solar Cells
In: Journal of Physical Chemistry C, vol. 117, no. 17, pp. 8619-8627, 2013, ISSN: 1932-7447Graphene and ZnO, as two star, materials Were united to constitute the photoanode of dye sensitized solar cells (DSSCs) Highly electronically conductive graphene scaffolds incorporated into ZnO hierarchically structured nanoparticle. (HSN) photoanodes could simultaneously capture and transport photogenerated electrons injected into ZnO by excited dyes. This strategy was beneficial for electrons to fluently transfer to the collection electrode due to the decreased internal resistance and electron recombination loss. On the basis of these advantages, the DSSC incorporating 1.2 wt % graphene into the ZnO photoanode with 3 mu m in thickness exhibited a high short-circuit photocurrent density (J(sc)) of 10.89 mA/cm(2) and a power conversion efficiency (PCE) of 3.19%, which were increased by 43.48% and 38.09%, respectively, compared with those of the DSSC without graphene. It was found that the incorporated graphene could markedly prolong electron lifetime (tau(eff)) and effective diffusion length (L-n), which allowed the utilization of thicker photoanodes that could afford enhanced surface area for higher dye loading and light harvesting. Thus, an impressively high PCE of 5.86% was achieved for the DSSC composed of 9-mu m-thick ZnO photoanode, which could be the highest PCE compared with previous reports with the same thick photoanodes. These results demonstrate potential application of graphene for improving the performance of DSSCs.
@article{RN3, title = {Graphene Scaffolds Enhanced Photogenerated Electron Transport in ZnO Photoanodes for High-Efficiency Dye-Sensitized Solar Cells}, author = {F. Xu and J. Chen and X. Wu and Y. Zhang and Y. X. Wang and J. Sun and H. C. Bi and W. Lei and Y. R. Ni and L. T. Sun}, doi = {10.1021/jp312379b}, issn = {1932-7447}, year = {2013}, date = {2013-01-01}, urldate = {2013-01-01}, journal = {Journal of Physical Chemistry C}, volume = {117}, number = {17}, pages = {8619-8627}, abstract = {Graphene and ZnO, as two star, materials Were united to constitute the photoanode of dye sensitized solar cells (DSSCs) Highly electronically conductive graphene scaffolds incorporated into ZnO hierarchically structured nanoparticle. (HSN) photoanodes could simultaneously capture and transport photogenerated electrons injected into ZnO by excited dyes. This strategy was beneficial for electrons to fluently transfer to the collection electrode due to the decreased internal resistance and electron recombination loss. On the basis of these advantages, the DSSC incorporating 1.2 wt % graphene into the ZnO photoanode with 3 mu m in thickness exhibited a high short-circuit photocurrent density (J(sc)) of 10.89 mA/cm(2) and a power conversion efficiency (PCE) of 3.19%, which were increased by 43.48% and 38.09%, respectively, compared with those of the DSSC without graphene. It was found that the incorporated graphene could markedly prolong electron lifetime (tau(eff)) and effective diffusion length (L-n), which allowed the utilization of thicker photoanodes that could afford enhanced surface area for higher dye loading and light harvesting. Thus, an impressively high PCE of 5.86% was achieved for the DSSC composed of 9-mu m-thick ZnO photoanode, which could be the highest PCE compared with previous reports with the same thick photoanodes. These results demonstrate potential application of graphene for improving the performance of DSSCs.}, keywords = {原位电镜, 石墨烯}, pubstate = {published}, tppubtype = {article} }Journal ArticleZafar, Z.; Ni, Z. H.; Wu, X.; Shi, Z. X.; Nan, H. Y.; Bai, J.; Sun, L. T.
Evolution of Raman Spectra in Nitrogen Doped Graphene
In: Carbon, vol. 61, pp. 57-62, 2013, ISSN: 0008-6223.We present systematical Raman studies of nitrogen doped graphene (NG). Defective graphene by Ar+ ion bombardment was also studied for comparison. It was found that the defects/nitrogen dopants in NG are not homogenous. Our results also suggest that the G peak position and I-2D/I-G ratio cannot be simply used as fingerprint of doping concentration in NG. Both doping and compressive strain (as verified by transmission electron microscope) contribute to the shift of Raman peaks, while both doping and lattice defects contribute to the attenuation of 2D peak. Finally, the nature of defects in NG was probed and found that they are boundary defects. The detail analysis of the evolution of Raman spectra in NG would greatly help on the characterization and future application of this novel material. (C) 2013 Elsevier Ltd. All rights reserved.
@article{RN21, title = {Evolution of Raman Spectra in Nitrogen Doped Graphene}, author = {Z. Zafar and Z. H. Ni and X. Wu and Z. X. Shi and H. Y. Nan and J. Bai and L. T. Sun}, doi = {10.1016/j.carbon.2013.04.065}, issn = {0008-6223}, year = {2013}, date = {2013-01-01}, urldate = {2013-01-01}, journal = {Carbon}, volume = {61}, pages = {57-62}, abstract = {We present systematical Raman studies of nitrogen doped graphene (NG). Defective graphene by Ar+ ion bombardment was also studied for comparison. It was found that the defects/nitrogen dopants in NG are not homogenous. Our results also suggest that the G peak position and I-2D/I-G ratio cannot be simply used as fingerprint of doping concentration in NG. Both doping and compressive strain (as verified by transmission electron microscope) contribute to the shift of Raman peaks, while both doping and lattice defects contribute to the attenuation of 2D peak. Finally, the nature of defects in NG was probed and found that they are boundary defects. The detail analysis of the evolution of Raman spectra in NG would greatly help on the characterization and future application of this novel material. (C) 2013 Elsevier Ltd. All rights reserved.}, keywords = {石墨烯}, pubstate = {published}, tppubtype = {article} }ConferencePey, K. L.; Raghavan, N.; Liu, W. H.; Wu, X.; Shubhakar, K.; Bosman, M.
Real-Time Analysis of Ultra-Thin Gate Dielectric Breakdown and Recovery: A Reality
2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) , 2013.@conference{RN203, title = {Real-Time Analysis of Ultra-Thin Gate Dielectric Breakdown and Recovery: A Reality}, author = {K. L. Pey and N. Raghavan and W. H. Liu and X. Wu and K. Shubhakar and M. Bosman}, doi = {10.1109/ipfa.2013.6599175}, year = {2013}, date = {2013-01-01}, urldate = {2013-01-01}, booktitle = {2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) }, journal = {Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)}, pages = {319-31}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {conference} }ConferenceXing, Wu; Litao, Sun
Advanced Methodologies for Atomic-Scale Nanofabrication and Dynamic Characterization
2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) , 2013.@conference{RN198, title = {Advanced Methodologies for Atomic-Scale Nanofabrication and Dynamic Characterization}, author = {Wu Xing and Sun Litao}, doi = {10.1109/ipfa.2013.6599188}, year = {2013}, date = {2013-01-01}, urldate = {2013-01-01}, booktitle = {2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) }, journal = {Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)}, pages = {393-9}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {conference} }
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2012
Journal ArticleZhu Z, Chu J H
QUASI TWO-DIMENSIONAL ANALYSIS OF THE SURFACE POTENTIAL FOR POLY-Si THIN FILM TRANSISTORS BASED ON THE CHANNEL POTENTIAL
International Journal of Modern Physics B, 2012, 26: 1250069.Journal ArticleZhu L Q, Shao J, Lin T, Lu X, Zhu J Y, Tang X D, Chu J H
Photoionization absorption and zero-field spin splitting of acceptor-bound magnetic polaron in p-type Hg1-xMnxTe single crystals
Journal of Applied Physics, 2012, 111: 083502.Journal ArticleZhu L Q, Lin T, Guo S L, Chu J H
The mechanism of negative magnetoresistance in nondegenerate p-type Hg1-xMnxTe (x > 0.17) monocrystal
Acta Physica Sinica, 2012, 61: 087501.Journal ArticleZhou Y M, Yu G, Lin T, Dai N, Chu J H
Magneto-transport study of Landau level broadening in a gated AlGaAs/GaAs parabolic quantum well structure
Physica B-Condensed Matter, 2012, 407: 116-119.Journal ArticleZhou W Z, Wang W, Chang Z G, Wang Y Z, Lan Z Q, Shang L Y, Lin T, Cui L J, Zeng Y P, Li G X, Yu C H, Guo J, Chu J H
Effects of scattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells
Journal of Applied Physics, 2012, 112: 023713.Journal ArticleZhou D, Tang Y X, Wang F F, Xie D Z, Sun D Z, Shi W Z, Tian L, Sun J L, Meng X J, Chu J H, Kong W J, Luo L H
Improved dielectric and electrical insulating properties in Pb(Mg1/3Nb2/3)(0.62)Ti0.38O3 based multilayer ferroelectric thin films
Thin Solid Films, 2012, 522: 457-462.Journal ArticleZhang Z X, Shu X Z, Chu J H, Li Z
Accurate atmospheric transmittance model for O-2 absorption band near 762 nm
Journal of Infrared and Millimeter Waves, 2012, 31: 203-209.Journal ArticleZhang X H, Chen L, Lin T, He L, Guo S L, Chu J H
Photoluminescence and electrical characteristics of arsenic-doped HgCdTe
Journal of Infrared and Millimeter Waves, 2012, 31: 407-410.Journal ArticleZhang W J, Duan Z H, Jiang K, Hu Z G, Wang G S, Dong X L, Chu J H
Electronic band structures, dielectric functions and interband transitions of relaxor ferroelectric (1-x) Pb (Sc1/2Ta1/2) O-3-xPbHfO(3) ceramics: A spectroscopic reflectance study
Acta Materialia, 2012, 60: 6175-6182.Journal ArticleZhang J Z, Han M J, Li Y W, Hu Z G, Chu J H
Enhanced Raman scattering and photoluminescence of Bi3.25La0.75Ti3O12 nanotube arrays for optical and ferroelectric multifunctional applications
Applied Physics Letters, 2012, 101: 081903.Journal ArticleZhan Z N, Hu Z G, Meng K K, Zhao J H, Chu J H
Temperature dependent phonon Raman scattering of Heusler alloy Co2MnxFe1-xAl/GaAs films grown by molecular-beam epitaxy
Rsc Advances, 2012, 2: 9899-9903.Journal ArticleYue F Y, Chen L, Li Y W, Sun L, Yang P X, Chu J H
The determination of the x value in doped Hg1-xCdxTe by transmission spectra
Chinese Physics B, 2012, 21: 017804.Journal ArticleYang J, He J, Zhu J Y, Bai W, Sun L, Meng X J, Tang X D, Duan C G, Remiens D, Qiu J H, Chu J H
Small polaron migration associated multiple dielectric responses of multiferroic DyMnO3 polycrystal in low temperature region
Applied Physics Letters, 2012, 101: 222904.Journal ArticleXu X F, He X F, Wang H Y, Gu Q J, Shi S X, Xing H Z, Wang C R, Zhang J, Chen X S, Chu J H
The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures
Applied Surface Science, 2012, 261: 83-87.Journal ArticleWei L M, Zhou Y M, Yu G L, Gao K H, Liu X Z, Lin T, Guo S L, Dai N, Chu J H
Guy A D. Effective g-factor in high-mobility InGaAs/InP quantum well
Acta Physica Sinica, 2012, 61: 127102.Journal ArticleWang W, Zhou W, Wei S, Li X, Chang Z, Lin T, Shang L, Han K, Duan J, Tang N, Shen B, Chu J H
Magneto-resistance for two-dimensional electron gas in GaN/Al_xGa_(1-x)N heterostructure
Acta Physica Sinica, 2012, 61: 237302.ConferenceTian L, Meng X, Yang J, Sun J, Yuan S, Wang J, Bai W, Chu J H
Relaxor properties and tunability of electron-irradiated thin poly(vinlidene fluoride-trifluoroethylene) copolymer film
proceedings of the Spring International Conference on Material Sciences and Technology (MST-S), Xian, PEOPLES R CHINA, F May 27-30, 2012, 2012.Journal ArticleTian J J, Deng H M, Sun L, Kong H, Yang P X, Chu J H
Influence of Ni doping on phase transformation and optical properties of TiO2 films deposited on quartz substrates by sol-gel process
Applied Surface Science, 2012, 258: 4893-4897.Journal ArticleTian J J, Deng H M, Sun L, Kong H, Yang P X, Chu J H
Effects of Co doping on structure and optical properties of TiO2 thin films prepared by sol-gel method
Thin Solid Films, 2012, 520: 5179-5183.Journal ArticleTang Y X, Zhou D, Tian Y, Li X, Wang F F, Sun D Z, Shi W Z, Tian L, Sun J L, Meng X J, Chu J H
Low-Temperature Processing of High-Performance 0.74Pb(Mg1/3Nb2/3)O-3-0.26PbTiO(3) Thin Films on La0.6Sr0.4CoO3-Buffered Si Substrates for Pyroelectric Arrays Applications
Journal of the American Ceramic Society, 2012, 95: 1367-1371.Journal ArticleSun Y H, Yang P X, Chen Y, Shang L Y, Chu J H
Numerical evaluation of grading benefits in CdS/CdZnTe band-gap back graded solar cells
Optoelectronics and Advanced Materials-Rapid Communications, 2012, 6: 280-283.Journal ArticleSun L, He J, Chen Y, Yue F Y, Yang P X, Chu J H
Comparative study on Cu2ZnSnS4 thin films deposited by sputtering and pulsed laser deposition from a single quaternary sulfide target
Journal of Crystal Growth, 2012, 361: 147-151.Journal ArticleShen Y D, Li Y W, Zhang J Z, Zhu X, Hu Z G, Chu J H
Excellent insulating behavior Al2O3 thin films grown by atomic layer deposition efficiently at room temperature
Optoelectronics and Advanced Materials-Rapid Communications, 2012, 6: 618-622.Journal ArticleShen Y D, Li Y W, Li W M, Zhang J Z, Hu Z G, Chu J H
Growth of Bi2O3 Ultrathin Films by Atomic Layer Deposition
Journal of Physical Chemistry C, 2012, 116: 3449-3456.Journal ArticlePeng C, Yang P X, Wu L C, Song Z T, Rao F, Xu J A, Zhou X L, Zhu M, Liu B, Chu J H
N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory
Electrochemical and Solid State Letters, 2012, 15: H101-H104.Journal ArticlePeng C, Wu L C, Rao F, Song Z T, Yang P X, Cheng L M, Li J T, Zhou X L, Zhu M, Liu B, Chu J H
Improved Thermal Stability and Electrical Properties for Al-Sb-Te Based Phase-Change Memory
Ecs Solid State Letters, 2012, 1: 38-41.Journal ArticlePeng C, Wu L, Rao F, Song Z, Yang P, Song H, Ren K, Zhou X, Zhu M, Liu B, Chu J H
W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention
Applied Physics Letters, 2012, 101: 122108Journal ArticleMiao F J, Tao B R, Chu J H
Fabrication of arrays of one-dimensional porous silicon photonic crystal
Journal of Infrared and Millimeter Waves, 2012, 31: 311.Journal ArticleLin T, Shang L Y, Zhou W Z, Meng X J, Sun J L, Yu G, Guo S L, Chu J H
Competing conduction mechanisms of two-dimensional electrons and bulk-like electrons in the n-type surface of the naturally oxidized p-type HgCdTe thin film
Applied Physics a-Materials Science & Processing, 2012, 106: 703-707.Journal ArticleLiao Y Y, Li Y W, Hu Z G, Chu J H
Temperature dependent phonon Raman scattering of highly a-axis oriented CoFe2O4 inverse spinel ferromagnetic films grown by pulsed laser deposition
Applied Physics Letters, 2012, 100: 071905.ConferenceLi Y, Jing C, Chu J H
Attenuated total reflectance (ATR) GeO2 hollow infrared waveguides deposited from aqueous germanate ion solutions with different GeO2 concentrations
proceedings of the 2011 Asia Communications and Photonics Conference and Exhibition, Shanghai, China, F Nov 13-16, 2011, 2012.Journal ArticleLi W, Jiang K, Zhang J, Chen X, Hu Z, Chen S, Sun L, Chu J H
Temperature dependence of phonon modes, dielectric functions, and interband electronic transitions in Cu2ZnSnS4 semiconductor films
Phys Chem Chem Phys, 2012, 14: 9936-9941.Journal ArticleJing C B, Sun W, Wang W, Li Y, Chu J H
Morphology and crystal phase evolution of GeO2 in liquid phase deposition process
Journal of Crystal Growth, 2012, 338: 195-200.Journal ArticleJiang K, Zhang J Z, Yu W L, Hu Z G, Chu J H
Manganese doping effects on interband electronic transitions, lattice vibrations, and dielectric functions of perovskite-type Ba0.4Sr0.6TiO3 ferroelectric ceramics
Applied Physics a-Materials Science & Processing, 2012, 106: 877-884.Journal ArticleJiang K, Li W W, Chen X G, Zhan Z N, Sun L, Hu Z G, Chu J H
Doping effect on the phase transition temperature in ferroelectric SrBi2-xNdxNb2O9 layer-structured ceramics: a micro-Raman scattering study
Journal of Raman Spectroscopy, 2012, 43: 583-587.Journal ArticleHe Y, Dou Y N, Ma X G, Chen S B, Chu J H
Passivation and stability of thermal atomic layer deposited Al2O3 on CZ-Si
Acta Physica Sinica, 2012, 61: 248102.Journal ArticleHe J, Sun L, Ding N F, Kong H, Zuo S H, Chen S Y, Chen Y, Yang P X, Chu J H
Single-step preparation and characterization of Cu2ZnSn(SxSe1-x)(4) thin films deposited by pulsed laser deposition method
Journal of Alloys and Compounds, 2012, 529: 34-37.Journal ArticleHe J, Sun L, Chen S Y, Chen Y, Yang P X, Chu J H
Composition dependence of structure and optical properties of Cu2ZnSn(S,Se)(4) solid solutions: An experimental study
Journal of Alloys and Compounds, 2012, 511: 129-132.Journal ArticleHan M, Jiang K, Zhang J, Yu W, Li Y, Hu Z, Chu J H
Structural, electronic band transition and optoelectronic properties of delafossite CuGa1-xCrxO2 (0 <= x <= 1) solid solution films grown by the sol-gel method
Journal of Materials Chemistry, 2012, 22: 18463-18470.Journal ArticleGong S J, Duan C G, Zhu Z Q, Chu J H
Manipulation of magnetic anisotropy of Fe/graphene by charge injection
Applied Physics Letters, 2012, 100: 122410.Journal ArticleGe J, Zuo S H, Jiang J C, Ma J H, Yang L H, Yang P X, Chu J H
Investigation of Se supply for the growth of Cu2ZnSn(SxSe1-x)(4) (x approximate to 0.02-0.05) thin films for photovoltaics
Applied Surface Science, 2012, 258: 7844-7848.Journal ArticleGe J, Yu W L, Cao H, Jiang J C, Ma J H, Yang L H, Yang P X, Hu Z G, Chu J H
Fabrication of Cu2ZnSnS4 absorbers by sulfurization of Sn-rich precursors
Physica Status Solidi a-Applications and Materials Science, 2012, 209: 1493-1497.Journal ArticleGe J, Wu Y H, Zhang C J, Zuo S H, Jiang J C, Ma J H, Yang P X, Chu J H
Comparative study of the influence of two distinct sulfurization ramping rates on the properties of Cu2ZnSnS4 thin films
Applied Surface Science, 2012, 258: 7250-7254.Journal ArticleGao W L, Deng H M, Yang P X, Chu J H
Influences of Zn and Mnions co-dopants on the optical and ferroelectric properties of BaTiO3 thin films
Journal of Infrared and Millimeter Waves, 2012, 31: 193-196.Journal ArticleGao K H, Wei L M, Yu G L, Yang R, Lin T, Wei Y F, Yang J R, Sun L, Dai N, Chu J H
Magnetotransport property of HgCdTe inversion layer
Acta Physica Sinica, 2012, 61: 027301.Journal ArticleGao K H, Lin T, Wei L M, Liu X Z, Chen X, Yu G, Gu Y, Zhang Y G, Dai N, Chu J H
Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well
Solid State Communications, 2012, 152: 1042-1046.Journal ArticleGao H, Zhang C-j, Wang S-l, Chu J H
Residual stress of Zr thin film deposited by magnetic sputtering
Laser Technology, 2012, 36: 742-744.Journal ArticleGao C, Yang J, Meng X J, Bai W, Lin T, Sun J L, Chu J H
The effect of Nd doping on microstructure and electrical properties of BiFeO3 thin films
Journal of Infrared and Millimeter Waves, 2012, 31: 21-25.Journal ArticleDuan Z H, Yu Q, Wu J D, Sun J, Hu Z G, Chu J H
Lattice dynamics and dielectric functions of multiferroic BiFeO3/c-sapphire films determined by infrared reflectance spectra and temperature-dependent Raman scattering
Thin Solid Films, 2012, 525: 188-194.Journal ArticleDou Y N, He Y, Ma X G, Qiao Q, Chen X J, Wang Y Q, Chen R, Chu J H
Effect of CH4 flow rate on the optical properties of Boron-doped a-SiC:H films
Journal of Infrared and Millimeter Waves, 2012, 31: 5-10.Journal ArticleDou Y N, He Y, Huang C Y, Zhou C L, Ma X G, Chen R, Chu J H
Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si
Applied Physics a-Materials Science & Processing, 2012, 109: 673-677.Journal ArticleDing N F, Deng H M, Yang P X, Chu J H
Structure and optical properties of BiFe1-xZnxO3 thin films fabricated by pulsed laser deposition
Materials Letters, 2012, 82: 71-73.Journal ArticleDeng H, Deng H M, Yang P X, Chu J H
Effect of Cr doping on the structure, optical and magnetic properties of multiferroic BiFeO3 thin films
Journal of Materials Science-Materials in Electronics, 2012, 23: 1215-1218.Journal ArticleCui Y F, Zuo S H, Jiang J C, Chu J H
Effect of the concentration of Cu2+ in the electrolytes on CuInS2 thin films
Journal of Infrared and Millimeter Waves, 2012, 31: 102.Journal ArticleChen X G, Li W W, Wu J D, Sun J, Jiang K, Hu Z G, Chu J H
Temperature dependence of electronic band transition in Mn-doped SnO2 nanocrystalline films determined by ultraviolet-near-infrared transmittance spectra
Materials Research Bulletin, 2012, 47: 111-116.Journal ArticleCao H, Zhang C-j, Wang S-l, Chu J H
Research of uniformity of C8H8 filters
Laser Technology, 2012, 36: 623-626.Journal ArticleCao H, Zhang C-j, Wang S-l, Chu J H
Research of uniformity of C8H8 filters
Laser Technology, 2012, 36: 623-626.Journal ArticleBai W, Zhu J Y, Wang J L, Lin T, Yang J, Meng X J, Tang X D, Zhu Z Q, Chu J H
Effects of annealing temperature on the structures, ferroelectric and magnetic properties of Aurivillius Bi5Ti3FeO15 polycrystalline films
Journal of Magnetism and Magnetic Materials, 2012, 324: 2265-2270.Journal ArticleBai W, Chen G, Zhu J Y, Yang J, Lin T, Meng X J, Tang X D, Duan C G, Chu J H
Dielectric responses and scaling behaviors in Aurivillius Bi6Ti3Fe2O18 multiferroic thin films
Applied Physics Letters, 2012, 100: 082902.Journal Article
Chen, Y. N.; Goh, K. E. J.; Wu, X.; Lwin, Z. Z.; Singh, P. K.; Mahapatra, S.; Pey, K. L.
Temperature-Dependent Relaxation Current on Single and Dual Layer Pt Metal Nanocrystal-Based Al2O3/SiO2 Gate Stack
In: Journal of Applied Physics, vol. 112, no. 10, pp. 6, 2012, ISSN: 0021-8979.We present a systematic investigation of the temperature dependent relaxation current behavior for single layer and dual layer Pt metal nanocrystal (MNC)-based Al2O3/SiO2 flash memory gate stacks. Stacks containing single layer Pt MNC exhibit a dual-slope behavior in the log-log plots of the relaxation transient, whereas those with dual layer Pt MNC exhibit a single-slope behavior. We propose a physical model embodying two competing relaxation mechanisms to explain the Pt MNC induced relaxation current-thermionic emission and the quantum tunneling. Based on this model, the dual-slope behavior of single layer MNC-based gate stack can be ascribed to the dominance of thermionic emission at the initial part and quantum tunneling at the tail part. In contrast, the single slope behavior of the dual layer metal nanocrystal-based stack arises from the dominance of the quantum tunneling throughout the relaxation. In addition, we verify that stacks containing dual layer MNC show better retention property than their single layer counterparts. Our results demonstrate that relaxation current measurements offer a simple way to assess the charge retention capability for MNC-based gate stacks. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764873]
<Go to ISI>://WOS:000311969800145
@article{RN26, title = {Temperature-Dependent Relaxation Current on Single and Dual Layer Pt Metal Nanocrystal-Based Al2O3/SiO2 Gate Stack}, author = {Y. N. Chen and K. E. J. Goh and X. Wu and Z. Z. Lwin and P. K. Singh and S. Mahapatra and K. L. Pey}, url = {<Go to ISI>://WOS:000311969800145}, doi = {10.1063/1.4764873}, issn = {0021-8979}, year = {2012}, date = {2012-01-01}, urldate = {2012-01-01}, journal = {Journal of Applied Physics}, volume = {112}, number = {10}, pages = {6}, abstract = {We present a systematic investigation of the temperature dependent relaxation current behavior for single layer and dual layer Pt metal nanocrystal (MNC)-based Al2O3/SiO2 flash memory gate stacks. Stacks containing single layer Pt MNC exhibit a dual-slope behavior in the log-log plots of the relaxation transient, whereas those with dual layer Pt MNC exhibit a single-slope behavior. We propose a physical model embodying two competing relaxation mechanisms to explain the Pt MNC induced relaxation current-thermionic emission and the quantum tunneling. Based on this model, the dual-slope behavior of single layer MNC-based gate stack can be ascribed to the dominance of thermionic emission at the initial part and quantum tunneling at the tail part. In contrast, the single slope behavior of the dual layer metal nanocrystal-based stack arises from the dominance of the quantum tunneling throughout the relaxation. In addition, we verify that stacks containing dual layer MNC show better retention property than their single layer counterparts. Our results demonstrate that relaxation current measurements offer a simple way to assess the charge retention capability for MNC-based gate stacks. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764873]}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }
Journal ArticleLiu, W. H.; Pey, K. L.; Raghavan, N.; Wu, X.; Bosman, M.
Triggering Voltage for Post-Breakdown Random Telegraph Noise in HfLaO Dielectric Metal Gate Metal-Oxide-Semiconductor Field Effect Transistors and Its Reliability Implications
In: Journal of Applied Physics, vol. 111, no. 2, pp. 5, 2012, ISSN: 0021-8979.We report a triggering voltage V-trig for observing gate leakage current (I-g) random telegraph noise (RTN) in the post-breakdown regime of HfLaO dielectric metal gate stacks. V-trig, the onset voltage to observe RTN in degraded dielectrics, is highly dependent on breakdown hardness, which is controlled by the leakage current compliance (I-gl). This dependence is qualitatively analyzed using a percolation dilation model, where generation of additional traps either at different energy levels or spatial locations gives lower V-trig at higher I-gl. The magnitude of V-trig can be used as a direct indication of the impact of RTN on the performance of the transistor at device level, when V-trig is evaluated by comparing with the device operating voltage. (C) 2012 American Institute of Physics. [doi:10.1063/1.3676255]
<Go to ISI>://WOS:000299792400059
@article{RN27, title = {Triggering Voltage for Post-Breakdown Random Telegraph Noise in HfLaO Dielectric Metal Gate Metal-Oxide-Semiconductor Field Effect Transistors and Its Reliability Implications}, author = {W. H. Liu and K. L. Pey and N. Raghavan and X. Wu and M. Bosman}, url = {<Go to ISI>://WOS:000299792400059}, doi = {10.1063/1.3676255}, issn = {0021-8979}, year = {2012}, date = {2012-01-01}, urldate = {2012-01-01}, journal = {Journal of Applied Physics}, volume = {111}, number = {2}, pages = {5}, abstract = {We report a triggering voltage V-trig for observing gate leakage current (I-g) random telegraph noise (RTN) in the post-breakdown regime of HfLaO dielectric metal gate stacks. V-trig, the onset voltage to observe RTN in degraded dielectrics, is highly dependent on breakdown hardness, which is controlled by the leakage current compliance (I-gl). This dependence is qualitatively analyzed using a percolation dilation model, where generation of additional traps either at different energy levels or spatial locations gives lower V-trig at higher I-gl. The magnitude of V-trig can be used as a direct indication of the impact of RTN on the performance of the transistor at device level, when V-trig is evaluated by comparing with the device operating voltage. (C) 2012 American Institute of Physics. [doi:10.1063/1.3676255]}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }Journal ArticleRaghavan, N.; Pey, K. L.; Wu, X.; Liu, W. H.; Bosman, M.
Percolative Model and Thermodynamic Analysis of Oxygen-Ion-Mediated Resistive Switching
In: IEEE Electron Device Letters, vol. 33, no. 5, pp. 712-714, 2012, ISSN: 0741-3106.We present a statistical percolation model for retention lifetime assessment of resistive switching memory at the high-resistance state and correlate it to the soft breakdown phenomenon in ultrathin gate dielectrics. Electrical characterization in the low-resistance state shows that the location of oxygen-vacancy-based conductive filaments is almost randomly distributed and the trap generation rate across the oxide after reset transition is uniform. The constraints for the range of read voltages in the low and high conduction states, governed by the area of the device and the thermodynamics of oxygen ion transport, are presented.
<Go to ISI>://WOS:000303322500028
@article{RN25, title = {Percolative Model and Thermodynamic Analysis of Oxygen-Ion-Mediated Resistive Switching}, author = {N. Raghavan and K. L. Pey and X. Wu and W. H. Liu and M. Bosman}, url = {<Go to ISI>://WOS:000303322500028}, doi = {10.1109/led.2012.2187170}, issn = {0741-3106}, year = {2012}, date = {2012-01-01}, urldate = {2012-01-01}, journal = {IEEE Electron Device Letters}, volume = {33}, number = {5}, pages = {712-714}, abstract = {We present a statistical percolation model for retention lifetime assessment of resistive switching memory at the high-resistance state and correlate it to the soft breakdown phenomenon in ultrathin gate dielectrics. Electrical characterization in the low-resistance state shows that the location of oxygen-vacancy-based conductive filaments is almost randomly distributed and the trap generation rate across the oxide after reset transition is uniform. The constraints for the range of read voltages in the low and high conduction states, governed by the area of the device and the thermodynamics of oxygen ion transport, are presented.}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }ConferenceLeong, Pey Kin; Raghavan, N.; Xing, Wu; Liu, W.; Bosman, M.
Dielectric Breakdown - Recovery in Logic and Resistive Switching in Memory - Bridging the Gap Between the Two Phenomena
2012, (2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ).@conference{RN206, title = {Dielectric Breakdown - Recovery in Logic and Resistive Switching in Memory - Bridging the Gap Between the Two Phenomena}, author = {Pey Kin Leong and N. Raghavan and Wu Xing and W. Liu and M. Bosman}, doi = {10.1109/icsict.2012.6467690}, year = {2012}, date = {2012-01-01}, urldate = {2012-01-01}, journal = {2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)}, pages = {6 pp.-6 pp.}, note = {2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) }, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {conference} }Journal ArticleRaghavan, N.; Pey, K. L.; Shubhakar, K.; Wu, X.; Liu, W. H.; Bosman, M.
Role of Grain Boundary Percolative Defects and Localized Trap Generation on The Reliability Statistics of High-Kappa Gate Dielectric Stacks
In: 2012 IEEE International Reliability Physics Symposium (IRPS), pp. 6A.1.1-11, 2012, (2012 IEEE International Reliability Physics Symposium (IRPS) 15-19 April 2012 Anaheim, CA, USA IEEE Electron Devices Soc. 0 978-1-4577-1678-2).<Go to ISI>://INSPEC:12880200
@article{RN207, title = {Role of Grain Boundary Percolative Defects and Localized Trap Generation on The Reliability Statistics of High-Kappa Gate Dielectric Stacks}, author = {N. Raghavan and K. L. Pey and K. Shubhakar and X. Wu and W. H. Liu and M. Bosman}, url = {<Go to ISI>://INSPEC:12880200}, doi = {10.1109/irps.2012.6241862}, year = {2012}, date = {2012-01-01}, urldate = {2012-01-01}, journal = {2012 IEEE International Reliability Physics Symposium (IRPS)}, pages = {6A.1.1-11}, note = {2012 IEEE International Reliability Physics Symposium (IRPS) 15-19 April 2012 Anaheim, CA, USA IEEE Electron Devices Soc. 0 978-1-4577-1678-2}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }ConferenceShubhakar, K.; Pey, K. L.; Bosman, M.; Thamankar, R.; Kushvaha, S. S.; Loke, Y. C.; Wang, Z. R.; Raghavan, N.; Wu, X.; O'Shea, S. J.
Nanoscale Physical Analysis of Localized Breakdown Events in HfO2/SiOx Dielectric Stacks: A Correlation Study of STM Induced BD with C-AFM and TEM
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2012.@conference{RN210, title = {Nanoscale Physical Analysis of Localized Breakdown Events in HfO2/SiOx Dielectric Stacks: A Correlation Study of STM Induced BD with C-AFM and TEM}, author = {K. Shubhakar and K. L. Pey and M. Bosman and R. Thamankar and S. S. Kushvaha and Y. C. Loke and Z. R. Wang and N. Raghavan and X. Wu and S. J. O'Shea}, doi = {10.1109/ipfa.2012.6306264}, year = {2012}, date = {2012-01-01}, urldate = {2012-01-01}, booktitle = {2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)}, journal = {2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2012)}, pages = {7 pp.-7 pp.}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {conference} }
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2011
Journal ArticleBai W, Gao Y Q, Zhu J Y, Meng X J, Lin T, Yang J, Zhu Z Q, Chu J H
Electrical, magnetic, and optical properties in multiferroic Bi5Ti3FeO15 thin films prepared by a chemical solution deposition route
Journal of Applied Physics, 2011, 109: 064901.Journal ArticleLiu, W. H.; Pey, K. L.; Wu, X.; Raghavan, N.; Padovani, A.; Larcher, L.; Vandelli, L.; Bosman, M.; Kauerauf, T.
Threshold Shift observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of fForming Gas Anneal
In: Applied Physics Letters, vol. 99, no. 23, pp. 3, 2011, ISSN: 0003-6951.
The resistive switching mechanism, which is crucial for the operations of resistive random access memory (RRAM) devices, is investigated using HfO2 based MOSFETs. After the SET operation, MOSFETs exhibit a threshold voltage (V-T) shift that is found to be closely related to the formation of conductive filaments in the gate oxide. The RESET operation performed through a forming gas anneal treatment is found to have the same effect of applying a reverse polarity gate voltage sweep, as usually done in bipolar switching RRAM devices. After RESET, the gate current and VT measured shift back to their pristine levels, indicating the passivation of oxygen vacancies (forming the conductive path) as the most likely physical mechanism responsible for RRAMs RESET operation. Transmission electron microscopy analysis and physical simulations support these conclusions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3669525]
@article{RN30, title = {Threshold Shift observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of fForming Gas Anneal}, author = {W. H. Liu and K. L. Pey and X. Wu and N. Raghavan and A. Padovani and L. Larcher and L. Vandelli and M. Bosman and T. Kauerauf}, doi = {10.1063/1.3669525}, issn = {0003-6951}, year = {2011}, date = {2011-01-01}, urldate = {2011-01-01}, journal = {Applied Physics Letters}, volume = {99}, number = {23}, pages = {3}, abstract = {The resistive switching mechanism, which is crucial for the operations of resistive random access memory (RRAM) devices, is investigated using HfO2 based MOSFETs. After the SET operation, MOSFETs exhibit a threshold voltage (V-T) shift that is found to be closely related to the formation of conductive filaments in the gate oxide. The RESET operation performed through a forming gas anneal treatment is found to have the same effect of applying a reverse polarity gate voltage sweep, as usually done in bipolar switching RRAM devices. After RESET, the gate current and VT measured shift back to their pristine levels, indicating the passivation of oxygen vacancies (forming the conductive path) as the most likely physical mechanism responsible for RRAMs RESET operation. Transmission electron microscopy analysis and physical simulations support these conclusions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3669525]}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }
Journal ArticlePey, K. L.; Raghavan, N.; Wu, X.; Liu, W. H.; Li, X.; Bosman, M.; Shubhakar, K.; Lwin, Z. Z.; Chen, Y. N.; Qin, H. L.; Kauerauf, T.
Physical Analysis of Breakdown in High-Kappa/Metal Gate Stacks Using TEM/EELS and STM for Reliability Enhancement (invited)
In: Microelectronic Engineering, vol. 88, no. 7, pp. 1365-1372, 2011, ISSN: 0167-9317.
In this invited paper, we demonstrate how physical analysis techniques that are commonly used in integrated circuits failure analysis can be applied to detect the failure defects associated with ultrathin gate dielectric wear-out and breakdown in high-kappa materials and investigate the associated failure mechanism(s) based on the defect chemistry. The key contributions of this work are perhaps focused on two areas: (1) how to correlate the failure mechanisms in high-kappa/metal gate technology during wear-out and breakdown to device processing and materials and (2) how the understanding of these new failure mechanisms can be used in proposing "design for reliability" (DFR) initiatives for complex and expensive future CMOS nanoelectronic technology nodes of 22 nm and 15 nm. Hf-based high-kappa materials in conjunction with various gate electrode technologies will be used as main examples while other potential high-kappa gate materials such as cerium oxide (CeO2) will also be demonstrated to further illustrate the concept of DFR. (C) 2011 Elsevier B.V. All rights reserved.
@article{RN33, title = {Physical Analysis of Breakdown in High-Kappa/Metal Gate Stacks Using TEM/EELS and STM for Reliability Enhancement (invited)}, author = {K. L. Pey and N. Raghavan and X. Wu and W. H. Liu and X. Li and M. Bosman and K. Shubhakar and Z. Z. Lwin and Y. N. Chen and H. L. Qin and T. Kauerauf}, doi = {10.1016/j.mee.2011.03.012}, issn = {0167-9317}, year = {2011}, date = {2011-01-01}, urldate = {2011-01-01}, journal = {Microelectronic Engineering}, volume = {88}, number = {7}, pages = {1365-1372}, abstract = {In this invited paper, we demonstrate how physical analysis techniques that are commonly used in integrated circuits failure analysis can be applied to detect the failure defects associated with ultrathin gate dielectric wear-out and breakdown in high-kappa materials and investigate the associated failure mechanism(s) based on the defect chemistry. The key contributions of this work are perhaps focused on two areas: (1) how to correlate the failure mechanisms in high-kappa/metal gate technology during wear-out and breakdown to device processing and materials and (2) how the understanding of these new failure mechanisms can be used in proposing "design for reliability" (DFR) initiatives for complex and expensive future CMOS nanoelectronic technology nodes of 22 nm and 15 nm. Hf-based high-kappa materials in conjunction with various gate electrode technologies will be used as main examples while other potential high-kappa gate materials such as cerium oxide (CeO2) will also be demonstrated to further illustrate the concept of DFR. (C) 2011 Elsevier B.V. All rights reserved.}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }Journal ArticleRaghavan, N.; Liu, W. H.; Li, X. A.; Wu, X.; Bosman, M.; Pey, K. L.
Filamentation Mechanism of Resistive Switching in Fully Silicided High-kappa Gate Stacks
In: IEEE Electron Device Letters, vol. 32, no. 4, pp. 455-457, 2011, ISSN: 0741-3106.
We study the mechanism of filamentation in resistive switching (RS) memory from an electrical perspective using a conventional metal-insulator-semiconductor (MIS) high-kappa metal gate transistor test structure and propose the possibility of using the same transistor structure for both logic and RS memory applications. The filament location is measured after every SET transition, and our investigations point to a "pseudorandom" nature of filament nucleation. Migration of highly diffusive nickel from source/drain silicide contacts toward the active silicon channel region transforms the existing MIS stack to MIM, thereby enabling the RS phenomenon.
@article{RN31, title = {Filamentation Mechanism of Resistive Switching in Fully Silicided High-kappa Gate Stacks}, author = {N. Raghavan and W. H. Liu and X. A. Li and X. Wu and M. Bosman and K. L. Pey}, doi = {10.1109/led.2011.2107495}, issn = {0741-3106}, year = {2011}, date = {2011-01-01}, urldate = {2011-01-01}, journal = {IEEE Electron Device Letters}, volume = {32}, number = {4}, pages = {455-457}, abstract = {We study the mechanism of filamentation in resistive switching (RS) memory from an electrical perspective using a conventional metal-insulator-semiconductor (MIS) high-kappa metal gate transistor test structure and propose the possibility of using the same transistor structure for both logic and RS memory applications. The filament location is measured after every SET transition, and our investigations point to a "pseudorandom" nature of filament nucleation. Migration of highly diffusive nickel from source/drain silicide contacts toward the active silicon channel region transforms the existing MIS stack to MIM, thereby enabling the RS phenomenon.}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }
Journal ArticleRaghavan, N.; Pey, K. L.; Li, X.; Liu, W. H.; Wu, X.; Bosman, M.; Kauerauf, T.
Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled Regime
In: IEEE Electron Device Letters, vol. 32, no. 6, pp. 716-718, 2011, ISSN: 0741-3106.
We propose the bipolar-mode operation of resistive random access memory devices in a purely oxygen-vacancy (V-0)-controlled regime, which is achieved by very low compliance capping for forming/set transitions. This regime enables us to achieve a very low reset current of 10-100 nA, in which the governing mechanism for switching only involves the reversible drift of oxygen ions to and from oxygen soluble gate electrodes. The physical analysis of a gate stack in this V-0 regime confirms the absence of metallic nanofilaments. These findings pave the way for the realization of ultralow switching power RRAM devices.
@article{RN34, title = {Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled Regime}, author = {N. Raghavan and K. L. Pey and X. Li and W. H. Liu and X. Wu and M. Bosman and T. Kauerauf}, doi = {10.1109/led.2011.2127443}, issn = {0741-3106}, year = {2011}, date = {2011-01-01}, urldate = {2011-01-01}, journal = {IEEE Electron Device Letters}, volume = {32}, number = {6}, pages = {716-718}, abstract = {We propose the bipolar-mode operation of resistive random access memory devices in a purely oxygen-vacancy (V-0)-controlled regime, which is achieved by very low compliance capping for forming/set transitions. This regime enables us to achieve a very low reset current of 10-100 nA, in which the governing mechanism for switching only involves the reversible drift of oxygen ions to and from oxygen soluble gate electrodes. The physical analysis of a gate stack in this V-0 regime confirms the absence of metallic nanofilaments. These findings pave the way for the realization of ultralow switching power RRAM devices.}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }
Journal ArticleRaghavan, N.; Pey, K. L.; Liu, W. H.; Wu, X.; Li, X.; Bosman, M.
Evidence for Compliance Controlled Oxygen Vacancy and Metal Filament Based Resistive Switching Mechanisms in RRAM
In: Microelectronic Engineering, vol. 88, no. 7, pp. 1124-1128, 2011, ISSN: 0167-9317.
<Go to ISI>://WOS:000292572700021
@article{RN35, title = {Evidence for Compliance Controlled Oxygen Vacancy and Metal Filament Based Resistive Switching Mechanisms in RRAM}, author = {N. Raghavan and K. L. Pey and W. H. Liu and X. Wu and X. Li and M. Bosman}, url = {<Go to ISI>://WOS:000292572700021}, doi = {10.1016/j.mee.2011.03.027}, issn = {0167-9317}, year = {2011}, date = {2011-01-01}, urldate = {2011-01-01}, journal = {Microelectronic Engineering}, volume = {88}, number = {7}, pages = {1124-1128}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }Journal ArticleRaghavan, N.; Pey, K. L.; Wu, X.; Liu, W. H.; Li, X. A.; Bosman, M.; Kauerauf, T.
Oxygen-Soluble Gate Electrodes for Prolonged High-kappa Gate-Stack Reliability
In: IEEE Electron Device Letters, vol. 32, no. 3, pp. 252-254, 2011, ISSN: 0741-3106.
We propose the use of high-oxygen-solubility metal-gate electrodes as a material of choice for high-kappa gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metal-oxide-semiconductor devices with these gate electrodes reveal that the application of low negative bias stress after a soft-BD (SBD) event helps to restore the oxygen ions and passivate the oxygen vacancy traps that comprise the percolation path. This can be a simple yet effective design-for-reliability tool to initiate the self-repair of the percolation path and operate the circuit for a prolonged period after repair. The only requirement for achieving this SBD reversibility is to choose gate electrodes that can serve as good oxygen reservoirs.
@article{RN29, title = {Oxygen-Soluble Gate Electrodes for Prolonged High-kappa Gate-Stack Reliability}, author = {N. Raghavan and K. L. Pey and X. Wu and W. H. Liu and X. A. Li and M. Bosman and T. Kauerauf}, doi = {10.1109/led.2010.2099096}, issn = {0741-3106}, year = {2011}, date = {2011-01-01}, urldate = {2011-01-01}, journal = {IEEE Electron Device Letters}, volume = {32}, number = {3}, pages = {252-254}, abstract = {We propose the use of high-oxygen-solubility metal-gate electrodes as a material of choice for high-kappa gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metal-oxide-semiconductor devices with these gate electrodes reveal that the application of low negative bias stress after a soft-BD (SBD) event helps to restore the oxygen ions and passivate the oxygen vacancy traps that comprise the percolation path. This can be a simple yet effective design-for-reliability tool to initiate the self-repair of the percolation path and operate the circuit for a prolonged period after repair. The only requirement for achieving this SBD reversibility is to choose gate electrodes that can serve as good oxygen reservoirs.}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }Journal ArticleWu, X.; Fang, Z.; Li, K.; Bosman, M.; Raghavan, N.; Li, X.; Yu, H. Y.; Singh, N.; Lo, G. Q.; Zhang, X. X.; Pey, K. L.
Chemical Insight Into Origin of Forming-Free Resistive Random-Access Memory Devices
In: Applied Physics Letters, vol. 99, no. 13, pp. 3, 2011, ISSN: 0003-6951.
@article{RN6, title = {Chemical Insight Into Origin of Forming-Free Resistive Random-Access Memory Devices}, author = {X. Wu and Z. Fang and K. Li and M. Bosman and N. Raghavan and X. Li and H. Y. Yu and N. Singh and G. Q. Lo and X. X. Zhang and K. L. Pey}, doi = {10.1063/1.3645623}, issn = {0003-6951}, year = {2011}, date = {2011-01-01}, urldate = {2011-01-01}, journal = {Applied Physics Letters}, volume = {99}, number = {13}, pages = {3}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {article} }Journal ArticleWu, X.; Li, K.; Raghavan, N.; Bosman, M.; Wang, Q. X.; Cha, D. K.; Zhang, X. X.; Pey, K. L.Uncorrelated Multiple Conductive Filament Nucleation and Rupture in Ultra-Thin High-Kappa Dielectric Based Resistive Random Access Memory
In: Applied Physics Letters, vol. 99, no. 9, pp. 3, 2011, ISSN: 0003-6951.
@article{RN8, title = {Uncorrelated Multiple Conductive Filament Nucleation and Rupture in Ultra-Thin High-Kappa Dielectric Based Resistive Random Access Memory}, author = {X. Wu and K. Li and N. Raghavan and M. Bosman and Q. X. Wang and D. K. Cha and X. X. Zhang and K. L. Pey}, doi = {10.1063/1.3624597}, issn = {0003-6951}, year = {2011}, date = {2011-01-01}, urldate = {2011-01-01}, journal = {Applied Physics Letters}, volume = {99}, number = {9}, pages = {3}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {article} }Journal ArticleWu, X.; Pey, K. L.; Raghavan, N.; Liu, W. H.; Li, X.; Bai, P.; Zhang, G.; Bosman, M.
Using Post-Breakdown Conduction Study in A MIS Structure to Better Understand The Resistive Switching Mechanism in An MIM Stack
In: Nanotechnology, vol. 22, no. 45, pp. 7, 2011, ISSN: 0957-4484.
@article{RN5, title = {Using Post-Breakdown Conduction Study in A MIS Structure to Better Understand The Resistive Switching Mechanism in An MIM Stack}, author = {X. Wu and K. L. Pey and N. Raghavan and W. H. Liu and X. Li and P. Bai and G. Zhang and M. Bosman}, doi = {10.1088/0957-4484/22/45/455702}, issn = {0957-4484}, year = {2011}, date = {2011-01-01}, urldate = {2011-01-01}, journal = {Nanotechnology}, volume = {22}, number = {45}, pages = {7}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {article} }ConferenceLiu, W. H.; Pey, K. L.; Raghavan, N.; Wu, X.; Bosman, M.; Kauerauf, T.
Random Telegraph Noise Reduction in Metal Gate High-Kappa Stacks by Bipolar Switching and the Performance Boosting Technique
2011 IEEE International Reliability Physics Symposium (IRPS), 2011.
@conference{RN209, title = {Random Telegraph Noise Reduction in Metal Gate High-Kappa Stacks by Bipolar Switching and the Performance Boosting Technique}, author = {W. H. Liu and K. L. Pey and N. Raghavan and X. Wu and M. Bosman and T. Kauerauf}, doi = {10.1109/irps.2011.5784474}, year = {2011}, date = {2011-01-01}, urldate = {2011-01-01}, booktitle = {2011 IEEE International Reliability Physics Symposium (IRPS)}, pages = {3A.1 (8 pp.)-3A.1 (8 pp.)}, keywords = {可靠性}, pubstate = {published}, tppubtype = {conference} }ConferenceTran, X. A.; Gao, B.; Kang, J. F.; Wu, X.; Wu, L.; Fang, Z.; Wang, Z. R.; Pey, K. L.; Yeo, Y. C.; Du, A. Y.; Liu, M.; Nguyen, B. Y.; Li, M. F.; Yu, H. Y.
Self-Rectifying and Forming-Free Unipolar HfOx Based-High Performance RRAM Built by Fab-Avaialbe Materials
2011 IEEE International Electron Devices Meeting (IEDM) ,
@conference{RN208, title = {Self-Rectifying and Forming-Free Unipolar HfOx Based-High Performance RRAM Built by Fab-Avaialbe Materials}, author = {X. A. Tran and B. Gao and J. F. Kang and X. Wu and L. Wu and Z. Fang and Z. R. Wang and K. L. Pey and Y. C. Yeo and A. Y. Du and M. Liu and B. Y. Nguyen and M. F. Li and H. Y. Yu}, doi = {10.1109/iedm.2011.6131648}, year = {2011}, date = {2011-01-01}, urldate = {2011-01-01}, booktitle = {2011 IEEE International Electron Devices Meeting (IEDM) }, journal = {2011 IEEE International Electron Devices Meeting (IEDM 2011)}, pages = {31.2 (4 pp.)-31.2 (4 pp.)}, keywords = {原位电镜}, pubstate = {published}, tppubtype = {conference} }
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2010
Journal ArticleZhu M, Sun L, Li W W, Yu W L, Li Y W, Hu Z G, Chu J H
Lattice vibrations and dielectric functions of ferroelectric SrBi2-x,NdxNb2O9 bismuth layer-structured ceramics determined by infrared reflectance spectra
Materials Research Bulletin, 2010, 45: 1654-1658.Journal ArticleZhu J J, Li W W, Li Y W, Shen Y D, Hu Z G, Chu J H
Effects of applied electrical field on electronic structures in LaNiO3 conductive metallic oxide film: An optical spectroscopic study
Applied Physics Letters, 2010, 97: 211904.Journal ArticleZhou Y M, Yu G L, Gao K H, Lin T, Guo S L, Chu J H, Dai N
Magneto-tunneling effect in weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure
Acta Physica Sinica, 2010, 59: 4221-4225.Journal ArticleZhou Y M, Yu G, Wei L M, Gao K H, Zhou W Z, Lin T, Shang L Y, Guo S L, Chu J H, Dai N, Austing D G
Experimental approaches to zero-field spin splitting in a gated high-mobility In0.53Ga0.47As/InP quantum well structure: Weak antilocalization and beating pattern
Journal of Applied Physics, 2010, 107: 053708.Journal ArticleZhou Y M, Gao K H, Yu G, Zhou W Z, Lin T, Guo S L, Chu J H, Dai N
Gate-controlled electron-electron interactions in an In0:53Ga0:47As/InP quantum well structure (vol 150, pg 251, 2010)
Solid State Communications, 2010, 150: 901-901.Journal ArticleZhou Y M, Gao K H, Yu G, Zhou W Z, Lin T, Guo S L, Chu J H, Dai N
Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure
Solid State Communications, 2010, 150: 251-253.Journal ArticleZhou W Z, Lin T, Shang L Y, Yu G, Gao K H, Zhou Y M, Wei L M, Cui L J, Zeng Y P, Guo S L, Chu J H
Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction
Physical Review B, 2010, 81: 195312.Journal ArticleZhou W, Dai X, Lin T, Xu Q, Chu J H
Study of electricproperties for As-doped Hg1-xCdxTe multi-carrier system
Journal of Guangxi University, 2010, 35: 821-826.Journal ArticleZhou W, Dai X, Lin T, Shang L, Cui L, Zeng Y, Chu J H
Zero-field spin splitting of two-dimensional electron gas in In0.53Ga0.47As/In0.52Al0.48As quantum well
Journal of Guangxi University, 2010, 35: 1027-1031.Journal ArticleZhang Z X A, Lin T E, Chu J H
Remote sounding of atmospheric pressure profile from space, part 2: channel selection
Journal of Applied Remote Sensing, 2010, 4: 043522.Journal ArticleZhang Z X, Lin T, Chu J H
Remote sounding of atmospheric pressure profile from space, part 3: error estimation
Journal of Applied Remote Sensing, 2010, 4: 0435360.Journal ArticleZhang Z L, Deng H M, Guo M, Yang P X, Chu J H
PREPARATION AND ELECTRICAL PROPERTIES OF Bi-2 VO5.5 FERROELECTRIC THIN FILM
Journal of Infrared and Millimeter Waves, 2010, 29: 248.Journal ArticleZhang T, Hu G J, Shang J L, Sun Y, Chu J H, Dai N
Micro-Structures and Optical Properties of PbZr0.4Ti0.6O3 Multilayer Films Deposited on FTO-Coated Glass Substrate
Journal of Infrared and Millimeter Waves, 2010, 29: 176-179.Journal ArticleZhang T, Hu G J, Bu H J, Wu J, Chu J H, Dai N
Evolution of microstructure and related properties of PbZr0.4Ti0.6O3 films on F-doped tin oxide with annealing temperature
Journal of Applied Physics, 2010, 107: 084103.Journal ArticleZhang J Z, Shen Y D, Li Y W, Hu Z G, Chu J H
Composition Dependence of Microstructure, Phonon Modes, and Optical Properties in Rutile TiO2:Fe Nanocrystalline Films Prepared by a Nonhydrolytic Sol-Gel Route
Journal of Physical Chemistry C, 2010, 114: 15157-15164.Journal ArticleYue F Y, Chen L, Li Y W, Hu Z G, Sun L, Yang P X, Chu J H
Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy
Chinese Physics B, 2010, 19: 117106.Journal ArticleYuan S Z, Meng X J, Sun J L, Wang J L, Liu P F, Chu J H
A Sharp Peak of the Differential Conductivity of P(VDF-TrFe) Films Near the Coercive Field
Ferroelectrics, 2010, 405: 133-137.Journal ArticleYu W L, Li W W, Wu J D, Sun J, Zhu J J, Zhu M, Hu Z G, Chu J H
Far-Infrared-Ultraviolet Dielectric Function, Lattice Vibration, and Photoluminescence Properties of Diluted Magnetic Semiconductor Sn1-xMnxO2/c-Sapphire Nanocrystalline Films
Journal of Physical Chemistry C, 2010, 114: 8593-8600.Journal ArticleYang J, Gao Y Q, Wu J, Huang Z M, Meng X J, Shen M R, Sun J L, Chu J H
Temperature dependent optical properties of Mn doped (Pb, Sr)TiO3 ferroelectric films in absorption region: Electron-phonon interaction
Journal of Applied Physics, 2010, 108: 114102.Journal ArticleWu J, Huang Z M, Hou Y, Gao Y Q, Chu J H
Structural, electrical, and magnetic properties of Mn2.52-xCoxNi0.48O4 films
Journal of Applied Physics, 2010, 107: 053716.Journal ArticleWu J, Huang Z, Hou Y, Gao Y, Chu J H
Variation in hopping conduction across the magnetic transition in spinel Mn1.56Co0.96Ni0.48O4 films
Applied Physics Letters, 2010, 96: 082103Journal ArticleWang J Q, Mao H B, Yu J G, Zhao Q, Zhang H Y, Yang P X, Zhu Z Q, Chu J H
Electrically tunable electron g factors in coupled InAs/GaAs pyramid quantum dots
Applied Physics Letters, 2010, 96: 062108.Journal ArticleWang J L, Meng X J, Gao Y Q, Huang Z M, Shen H, Sun J L, Chu J H
Optical and Electric Properties of Poly (Vinylidene Fluoried-Trifluoroethylene) Thin Film by Langmuir-Blodgett Technique
Journal of Infrared and Millimeter Waves, 2010, 29: 406.Journal ArticleWang J L, Gao Y Q, Huang Z M, Meng X J, Yuan S Z, Yang J, Sun J L, Chu J H
The Optical Dispersion of Langmuir-Blodgett Terpolymer Films
Ferroelectrics, 2010, 405: 120-125.Journal ArticleSun Y H, Lin T, Gao K H, Hu Z G, Wu H Z, Yang P X, Dai N, Chu J H
Temperature dependent transport properties of p-Pb1-xMnxSe films
Journal of Applied Physics, 2010, 108: 043709.Journal ArticleShao J, Chen L, Zha F X, Lu W, Lu X A, Guo S L, He L, Chu J H
Modulation mechanism of infrared photoreflectance in narrow-gap HgCdTe epilayers: A pump power dependent study
Journal of Applied Physics, 2010, 108: 023518.Journal ArticleShao J, Chen L, Lu W, Lu X, Zhu L Q, Guo S L, He L, Chu J H
Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs
Applied Physics Letters, 2010, 96: 121915.Journal ArticleLuo M, Tang Z, Zheng J, Zhu Z Q, Chu J H
First-principles studies of interlayer exchange coupling in (Ga, Mn)As-based diluted magnetic semiconductor multilayers
Journal of Applied Physics, 2010, 108: 053703.Journal ArticleLiu P F, Wang J L, Meng X J, Yang J, Dkhil B, Chu J H
Huge electrocaloric effect in Langmuir-Blodgett ferroelectric polymer thin films
New Journal of Physics, 2010, 12: 023035.Journal ArticleLiu P F, Meng X J, Wang J L, Chu J H, Gemeiner P, Geiger S, Dkhil B
Structure Change of Poly(Vinylidene Fluoride-Trifluoroethylene) Ferroelectric Thin Films on Different Electrodes
Ferroelectrics, 2010, 405: 183-187.Journal ArticleLi Y W, Shen Y D, Yue F Y, Hu Z G, Ma X M, Chu J H
Preparation and characterization of BiFeO3/LaNiO3 heterostructure films grown on silicon substrate
Journal of Crystal Growth, 2010, 312: 617-620.Journal ArticleLi W W, Zhu J J, Wu J D, Sun J, Zhu M, Hu Z G, Chu J H
Composition and Temperature Dependence of Electronic and Optical Properties in Manganese Doped Tin Dioxide Films on Quartz Substrates Prepared by Pulsed Laser Deposition
Acs Applied Materials & Interfaces, 2010, 2: 2325-2332.Journal ArticleLi W W, Zhu J J, Wu J D, Gan J, Hu Z G, Zhu M, Chu J H
Temperature dependence of electronic transitions and optical properties in multiferroic BiFeO3 nanocrystalline film determined from transmittance spectra
Applied Physics Letters, 2010, 97: 121102.Journal ArticleLi W W, Yu W L, Jiang Y J, Jing C B, Zhu J Y, Zhu M, Hu Z G, Tang X D, Chu J H
Structure, Optical, and Room-Temperature Ferromagnetic Properties of Pure and Transition-Metal-(Cr, Mn, and Ni)-Doped ZnO Nanocrystalline Films Grown by the Sol Gel Method
Journal of Physical Chemistry C, 2010, 114: 11951-11957.Journal ArticleLi W W, Hu Z G, Li Y W, Zhu M, Zhu Z Q, Chu J H. Growth
Microstructure, and Infrared-Ultraviolet Optical Conductivity of La0.5Sr0.5CoO3 Nanocrystalline Films on Silicon Substrates by Pulsed Laser Deposition
Acs Applied Materials & Interfaces, 2010, 2: 896-902.Journal ArticleJing C B, Zang X D, Bai W, Chu J H, Liu A Y
Aqueous germanate ion solution promoted synthesis of worm-like crystallized Ge nanostructures under ambient conditions (vol 20, 505607, 2009)
Nanotechnology, 2010, 21: 109801.Journal ArticleJing C B, Shan H Y, Zhang C J, Chu J H
Preparation of thick GeO2 glass film with high UV photosensitivity
Journal of Non-Crystalline Solids, 2010, 356: 2884-2888.Journal ArticleJing C B, Jiang Y J, Bai W, Chu J H, Liu A Y
Synthesis of Mn-doped ZnO diluted magnetic semiconductors in the presence of ethyl acetoacetate under solvothermal conditions
Journal of Magnetism and Magnetic Materials, 2010, 322: 2395-2400.Journal ArticleHuang D J, Deng H M, Yang P X, Chu J H
Optical and electrical properties of multiferroic bismuth ferrite thin films fabricated by sol-gel technique
Materials Letters, 2010, 64: 2233-2235.Journal ArticleHu G J, Zhang T, Bu H J, Sun J L, Chu J H, Dai N, Zhu D M, Wu Y Z
An abnormal dielectric relaxation phenomenon observed in PbZr(0.38)Ti(0.62)O(3) multilayers
Journal of Applied Physics, 2010, 107: 094107.Journal ArticleHan J Q, Wang Y P, Guo F M, Xu B, Xiong D Y, Zhou M C, Ye Y C, Zhu Z Q, Chu J H
Electrical behavior on packaging module for the novel photoelectric sensor
proceedings of the 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, Xiamen, China, F 20-23 Jan. 2010, 2010. IEEE.Journal ArticleGong S J, Sheng W, Yang Z Q, Chu J H
First-principles investigation of bilayer graphene with intercalated C, N or O atoms
J Phys Condens Matter, 2010, 22: 245502.Journal ArticleGao Y Q, Ma J H, Huang Z M, Hou Y, Wu J, Chu J H
Effects of substrate temperature on the dielectric function of ZnO films
Applied Physics a-Materials Science & Processing, 2010, 98: 129-134.Journal ArticleGao Y Q, Huang Z M, Hou Y, Wu J, Li Z Q, Chu J H
Crystallization-dependent magnetic properties of Mn1.56Co0.96Ni0.48O4 thin films
Applied Surface Science, 2010, 256: 2552-2556.Journal ArticleGao K H, Yu G, Zhou Y M, Wei L M, Lin T, Shang L Y, Sun L, Yang R, Zhou W Z, Dai N, Chu J H, Austing D G, Gu Y, Zhang Y G
Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells
Journal of Applied Physics, 2010, 108: 063701.Journal ArticleGao C, Meng X J, Sun J L, Ma J H, Lin T, Chu J H
Ferroelectric Properties of BiFeO3 Thin Films Prepared via a Simple Chemical Solution Deposition
Ferroelectrics, 2010, 406: 137-142.ConferenceChu J H
Spin-related phenomena in nano-structure of semiconductors
proceedings of the 3rd IEEE International Nanoelectronics Conference, Hong Kong, PEOPLES R CHINA, F Jan 03-08, 2010, 2010.Journal ArticleBai W, Meng X J, Lin T, Zhu X, Ma J H, Liu W J, Sun J L, Chu J H
Magnetic field induced ferroelectric and dielectric properties in Pb(Zr0.5Ti0.5)O-3 films containing Fe3O4 nanoparticles
Thin Solid Films, 2010, 518: 3721-3724.Journal ArticleBosman, M.; Zhang, Y.; Cheng, C. K.; Li, X.; Wu, X.; Pey, K. L.; Lin, C. T.; Chen, Y. W.; Hsu, S. H.; Hsu, C. H.
The Distribution of Chemical Elements in Al- or La-Capped High-Kappa Metal Gate Stacks
In: Applied Physics Letters, vol. 97, no. 10, pp. 3, 2010, ISSN: 0003-6951.
@article{RN36, title = {The Distribution of Chemical Elements in Al- or La-Capped High-Kappa Metal Gate Stacks}, author = {M. Bosman and Y. Zhang and C. K. Cheng and X. Li and X. Wu and K. L. Pey and C. T. Lin and Y. W. Chen and S. H. Hsu and C. H. Hsu}, doi = {10.1063/1.3478446}, issn = {0003-6951}, year = {2010}, date = {2010-01-01}, urldate = {2010-01-01}, journal = {Applied Physics Letters}, volume = {97}, number = {10}, pages = {3}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }ConferencePey, K. L.; Raghavan, N.; Li, X.; Liu, W. H.; Shubhakar, K.; Wu, X.; Bosman, M.
New Insight Into the TDDB and Breakdown Reliability of Novel High-Kappa Gate Dielectric Stacks
2010 IEEE International Reliability Physics Symposium, Ieee, 2010, ISBN: 978-1-4244-5430-3.
In order to achieve aggressive scaling of the equivalent oxide thickness (EOT) and simultaneously reduce leakage currents in logic devices, silicon-based oxides (SiON / SiO 2) have been replaced by physically thicker high-kappa transition metal oxide thin films by many manufacturers starting from the 45 nm technology node. CMOS process compatibility, integration and reliability are the key issues to address while introducing high-kappa at the front end. In this study, we analyze in-depth the reliability aspect of high-kappa dielectrics focusing on both the time-dependent-dielectric breakdown (TDDB) and the post breakdown evolution stage. Electrical characterization, physical failure analysis, statistical reliability modeling as well as atomistic simulations have all been used to achieve a comprehensive understanding of the physics of failure in HK and the associated microstructural defects and failure mechanisms. The role played by different gate materials ranging from poly-Si rarr FUSI rarr metal gate and different HK materials (HfO 2, HfSiON, HfZrO 4) is also investigated. Based on the results obtained, we emphasize the need and propose a few approaches of design for reliability (DFR) in high-kappa gate stacks.
@conference{RN50, title = {New Insight Into the TDDB and Breakdown Reliability of Novel High-Kappa Gate Dielectric Stacks}, author = {K. L. Pey and N. Raghavan and X. Li and W. H. Liu and K. Shubhakar and X. Wu and M. Bosman}, doi = {10.1109/irps.2010.5488805}, isbn = {978-1-4244-5430-3}, year = {2010}, date = {2010-01-01}, urldate = {2010-01-01}, booktitle = {2010 IEEE International Reliability Physics Symposium}, pages = {354-363}, publisher = {Ieee}, abstract = {In order to achieve aggressive scaling of the equivalent oxide thickness (EOT) and simultaneously reduce leakage currents in logic devices, silicon-based oxides (SiON / SiO 2) have been replaced by physically thicker high-kappa transition metal oxide thin films by many manufacturers starting from the 45 nm technology node. CMOS process compatibility, integration and reliability are the key issues to address while introducing high-kappa at the front end. In this study, we analyze in-depth the reliability aspect of high-kappa dielectrics focusing on both the time-dependent-dielectric breakdown (TDDB) and the post breakdown evolution stage. Electrical characterization, physical failure analysis, statistical reliability modeling as well as atomistic simulations have all been used to achieve a comprehensive understanding of the physics of failure in HK and the associated microstructural defects and failure mechanisms. The role played by different gate materials ranging from poly-Si rarr FUSI rarr metal gate and different HK materials (HfO 2, HfSiON, HfZrO 4) is also investigated. Based on the results obtained, we emphasize the need and propose a few approaches of design for reliability (DFR) in high-kappa gate stacks.}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {conference} }
Journal ArticleRaghavan, N.; Pey, K. L.; Liu, W. H.; Wu, X.; Li, X.
Unipolar Recovery of Dielectric Breakdown in Fully Silicided High-Kappa Gate Stack Devices and its Reliability Implications
In: Applied Physics Letters, vol. 96, no. 14, pp. 3, 2010, ISSN: 0003-6951.
@article{RN41, title = {Unipolar Recovery of Dielectric Breakdown in Fully Silicided High-Kappa Gate Stack Devices and its Reliability Implications}, author = {N. Raghavan and K. L. Pey and W. H. Liu and X. Wu and X. Li}, doi = {10.1063/1.3374450}, issn = {0003-6951}, year = {2010}, date = {2010-01-01}, urldate = {2010-01-01}, journal = {Applied Physics Letters}, volume = {96}, number = {14}, pages = {3}, keywords = {可靠性}, pubstate = {published}, tppubtype = {article} }Journal ArticleWu, X.; Migas, D. B.; Li, X.; Bosman, M.; Raghavan, N.; Borisenko, V. E.; Pey, K. L.
Role of Oxygen Vacancies in HfO2-Based Gate Stack Breakdown
In: Applied Physics Letters, vol. 96, no. 17, pp. 3, 2010, ISSN: 0003-6951.@article{RN7, title = {Role of Oxygen Vacancies in HfO2-Based Gate Stack Breakdown}, author = {X. Wu and D. B. Migas and X. Li and M. Bosman and N. Raghavan and V. E. Borisenko and K. L. Pey}, doi = {10.1063/1.3416912}, issn = {0003-6951}, year = {2010}, date = {2010-01-01}, urldate = {2010-01-01}, journal = {Applied Physics Letters}, volume = {96}, number = {17}, pages = {3}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {article} }Journal ArticleWu, X.; Pey, K. L.; Zhang, G.; Bai, P.; Li, X.; Liu, W. H.; Raghavan, N.
Electrode Material Dependent Breakdown and Recovery in Advanced High-Kappa Gate Stacks
In: Applied Physics Letters, vol. 96, no. 20, pp. 3, 2010, ISSN: 0003-6951.@article{RN10, title = {Electrode Material Dependent Breakdown and Recovery in Advanced High-Kappa Gate Stacks}, author = {X. Wu and K. L. Pey and G. Zhang and P. Bai and X. Li and W. H. Liu and N. Raghavan}, doi = {10.1063/1.3429682}, issn = {0003-6951}, year = {2010}, date = {2010-01-01}, urldate = {2010-01-01}, journal = {Applied Physics Letters}, volume = {96}, number = {20}, pages = {3}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {article} }ConferencePey, K. L.; Wu, X.; Liu, W. H.; Li, X.; Raghavan, N.; Shubhakar, K.; Bosman, M.
An Overview of Physical Analysis of Nanosize Conductive Path in Ultrathin SiON and High-Kappa Gate Dielectrics in Nanoelectronic Devices
2010, (2010 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)).@conference{RN212, title = {An Overview of Physical Analysis of Nanosize Conductive Path in Ultrathin SiON and High-Kappa Gate Dielectrics in Nanoelectronic Devices}, author = {K. L. Pey and X. Wu and W. H. Liu and X. Li and N. Raghavan and K. Shubhakar and M. Bosman}, doi = {10.1109/ipfa.2010.5531983}, year = {2010}, date = {2010-01-01}, urldate = {2010-01-01}, journal = {2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010)}, pages = {12 pp.-12 pp.}, note = {2010 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {conference} }
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2009
Journal ArticleZhou Y M, Shang L Y, Yu G, Gao K H, Zhou W Z, Lin T, Guo S L, Chu J H, Dai N, Austing D G
Transport properties of a spin-split two-dimensional electron gas in an In0.53Ga0.47As/InP quantum well structure
Journal of Applied Physics, 2009, 106: 073722Journal ArticleZhang X D, Lin T, Meng X J, Sun J L, Chu J H, Park S, Kwon H, Hwang J, Park G
Structures and Properties of PZT(52/48) Thin Films with Different Substrate Temperature and Oxygen Percentage in Mixed Ar and O-2 Gas on LNO/Si (100) by Sputtering
Integrated Ferroelectrics, 2009, 113: 63-71.Journal ArticleZhang X D, Lin T, Meng X J, Sun J L, Chu J H, Park S, Kwon H, Hwang J, Park G
Effect of Sputtering Working Pressure on Microstructures and Properties of PZT Thin Films
Integrated Ferroelectrics, 2009, 113: 31-40.Journal ArticleZhan G Z, Guo F M, Li J W, Zhu Z Q, Chu J H
An equivalent circuit model of a novel photodetector
Infrared Physics & Technology, 2009, 52: 434-437.Journal ArticleYue F Y, Chen L, Wu J, Hu Z G, Li Y W, Yang P X, Chu J H
Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra
Chinese Physics Letters, 2009, 26: 47804.Journal ArticleYang J, Meng X J, Shen M R, Sun J L, Chu J H
Effects of Mn doping on dielectric and ferroelectric properties of (Pb, Sr)TiO3 films on (111) Pt/Ti/SiO2/Si substrates
Journal of Applied Physics, 2009, 106: 094108.Journal ArticleYang J, Gao Y Q, Huang Z M, Meng X J, Shen M R, Yin H, Sun J L, Chu J H
Dielectric functions of ferroelectric Pb0.5Sr0.5TiO3 film determined by transmittance spectroscopy
Journal of Physics D-Applied Physics, 2009, 42: 215403.Journal ArticleXu H S, Liu X B, Fang X R, Xie H F, Li G B, Meng X J, Sun J L, Chu J H
Domain stabilization effect of interlayer on ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin film
Journal of Applied Physics, 2009, 105: 034107.Journal ArticleWang J Q, Liu Y, Mao H B, Zhao Q, Yu J G, Zhang Y, Zhu Z Q, Chu J H
Manipulation of spin polarization by charge polarization in GaMnN ferromagnetic resonant tunneling diode
Applied Physics Letters, 2009, 94: 172501.Journal ArticleTang N, Shen B, Han K, He X W, Yin C M, Yang Z J, Qin Z X, Zhang G Y, Lin T, Zhou W Z, Shang L Y, Chu J H
Influence of the illumination on the subband structure and occupation in Al (x) Ga1-x N/GaN heterostructures
Applied Physics a-Materials Science & Processing, 2009, 96: 953-957.Journal ArticleSun L, Zhou W Z, Yu G L, Shang L Y, Gao K H, Zhou Y M, Lin T, Cui L J, Zeng Y P, Chu J H
Strong Spin-Orbit Interactions in an InAlAs/InGaAs/InAlAs Two-Dimensional Electron Gas by Weak Antilocalization Analysis
Japanese Journal of Applied Physics, 2009, 48: 063004.Journal ArticleSun L, Chu J H, Yang P-x, Yue F-y, Li Y-w, Feng C-d, Mao C-l
Influence of substitution of Nd3+ for Bi3+ on structure and piezoelectric properties of SrBi2−xNdxNb2O9 (x=0, 0.1, 0.2 and 0.4)
Transactions of Nonferrous Metals Society of China, 2009, 19: 1459-1463.Journal ArticleSun L, Chu J H, Yang P X, Feng C D
Effects of substitutions of Nd3+ for Sr2+ on the properties of SrBi2Nb2O9 ceramics and their mechanism
Acta Physica Sinica, 2009, 58: 5790-5797.Journal ArticleShen H, Gao Y H, Zhou P, Ma J H, Sun J L, Meng X J, Chu J H
Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared on LaNiO3/Si substrates
Journal of Applied Physics, 2009, 105: 061637.Journal ArticleShao J, Lu X, Guo S L, Lu W, Chen L, Wei Y F, Yang J R, He L, Chu J H
Impurity levels and bandedge electronic structure in as-grown arsenic-doped HgCdTe by infrared photoreflectance spectroscopy
Physical Review B, 2009, 80: 155125.Journal ArticleShao J, Chen L, Lu X, Lu W, He L, Guo S L, Chu J H
Realization of photoreflectance spectroscopy in very-long wave infrared of up to 20 mu m
Applied Physics Letters, 2009, 95: 041908.Journal ArticleShang J L, Hu G J, Zhang T, Sun Y, Wu J, Chu J H, Dai N
Effect of Polyethylene Glycol Content on the Optical Properties of Ba0.9Sr0.1TiO3 Multilayers
Journal of the American Ceramic Society, 2009, 92: 539-541.Journal ArticleShang J L, Hu G J, Zhang T, Sun Y, Wu J, Chu J H, Dai N
Construction of PbZr0.4Ti0.6O3- and Ba0.9Sr0.1TiO3-Based Optical Microcavities by Chemical Solution Deposition
Journal of the American Ceramic Society, 2009, 92: 2159-2161.Journal ArticleQin J, Huang Z, Ge Y, Hou Y, Chu J H
Tandem demodulation lock-in amplifier based on digital signal processor for dual-modulated spectroscopy
Rev Sci Instrum, 2009, 80: 033112.Journal ArticleMiao F J, Zhang J, Xu S H, Wang L W, Chu J H, Cao Z S, Zhan P, Wang Z L
An Array of One-Dimensional Porous Silicon Photonic Crystal Reflector Islands for a Far-Infrared Image Detector
Chinese Physics Letters, 2009, 26: 044207.Journal ArticleMeng X-j, Han L, Sun J-l, Chu J H
Stable pyroelectric coefficient induced from self-polarization in sol-gel derived 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 thin films
Infrared Laser Engineering, 2009, 38: 961-965, 1019.Journal ArticleMeng X J, Wang J L, Xu H S, Sun J L, Chu J H
The effect of ac field amplitude on the relaxor behaviors in Langmuir-Blodgett terpolymer films
Journal of Applied Physics, 2009, 106: 114106.Journal ArticleMeng X J, Dkhil B, Liu P F, Wang J L, Sun J L, Chu J H
Threshold fields in the dc bias dependence of dielectric responses of relaxor ferroelectric terpolymer films
Journal of Applied Physics, 2009, 106: 104102Journal ArticleLiu Z P, Deng H M, Yang P X, Chu J H
Enhanced ferroelectric properties of Fe-doped BaTiO3 thin film deposited on LaNiO3/Si substrate by sol-gel technique
Materials Letters, 2009, 63: 2622-2624.Journal ArticleLiu P F, Wang J L, Tian L, Meng X J, Chu J H
Electric Characteristics of Langmuir-Blodgett Ferroelectric Polymers Film: High Pyroelectric Coefficient and Low Dielectric Constant
Journal of Infrared and Millimeter Waves, 2009, 28: 401.Journal ArticleLiu P F, Meng X J, Chu J H, Geneste G, Dkhil B
Effect of in-plane misfit strains on dielectric and pyroelectric response of poly (vinylidene fluoride-trifluoroethylene) ferroelectric polymer
Journal of Applied Physics, 2009, 105: 114105.Journal ArticleLiu P F, Gemeiner P, Shen H, Meng X J, Chu J H, Geiger S, Guiblin N, Dkhil B
Structural and dielectric properties of ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films with different bottom electrodes
Journal of Applied Physics, 2009, 106: 054111.Journal ArticleLiu P F, Gemeiner P, Meng X J, Chu J H, Geiger S, Dkhil B
The Debye-like relaxation mechanism in poly(vinylidene fluoride-trifluoroethylene) ferroelectric polymers
Journal of Applied Physics, 2009, 106: 104113.Journal ArticleLi Y W, Shen Y D, Hu Z G, Yue F Y, Chu J H
Effect of thickness on the dielectric property and nonlinear current-voltage behavior of CaCu3Ti4O12 thin films
Physics Letters A, 2009, 373: 2389-2392.Journal ArticleLi Y W, Hu Z G, Yue F Y, Zhou W Z, Yang P X, Chu J H
Effects of deposition temperature and post-annealing on structure and electrical properties in (La0.5Sr0.5)CoO3 films grown on silicon substrate
Applied Physics a-Materials Science & Processing, 2009, 95: 721-725.Journal ArticleLi W W, Li Y W, Hu Z G, Zhu Z Q, Chu J H
STUDY ON THE SPECTROSCOPIC ELLIPSOMETRY OF La0.5Sr0.5CoO3 FILMS PREPARED AT DIFFERENT SUBSTRATE TEMPERATURES
Journal of Infrared and Millimeter Waves, 2009, 28: 410-413.Journal ArticleLi W W, Hu Z G, Wu J D, Sun J, Zhu M, Zhu Z Q, Chu J H
Concentration Dependence of Optical Properties in Arsenic-Doped ZnO Nanocrystalline Films Grown on Silicon (100) Substrates by Pulsed Laser Deposition
Journal of Physical Chemistry C, 2009, 113: 18347-18352.Journal ArticleKong J, Deng H M, Yang P X, Chu J H
Synthesis and properties of pure and antimony-doped tin dioxide thin films fabricated by sol-gel technique on silicon wafer
Materials Chemistry and Physics, 2009, 114: 854-859.Journal ArticleJing C B, Xu X G, Zhang X L, Liu Z B, Chu J H
In situ synthesis and third-order nonlinear optical properties of CdS/PVP nanocomposite films
Journal of Physics D-Applied Physics, 2009, 42: 075402.Journal ArticleJing C B, Shan H Y, Zhang C J, Zang X D, Bai W, Chu J H
Aqueous germanate solution, alternative sol-gel precursor for preparation of Mn (x) Ge1-x diluted magnetic semiconductors
Journal of Sol-Gel Science and Technology, 2009, 51: 139-145.Journal ArticleJing C, Zhang C, Zang X, Zhou W, Bai W, Lin T, Chu J H
Fabrication and characteristics of porous germanium films
Sci Technol Adv Mater, 2009, 10: 065001.Journal ArticleJing C, Zang X, Bai W, Chu J H, Liu A
Aqueous germanate ion solution promoted synthesis of worm-like crystallized Ge nanostructures under ambient conditions
Nanotechnology, 2009, 20: 505607.Journal ArticleHu Z G, Li W W, Li Y W, Zhu M, Zhu Z Q, Chu J H
Electronic properties of nanocrystalline LaNiO3 and La0.5Sr0.5CoO3 conductive films grown on silicon substrates determined by infrared to ultraviolet reflectance spectra
Applied Physics Letters, 2009, 94: 221104.Journal ArticleHu G J, Zhang T, Sun J L, Zhu D M, Chu J H, Dai N
Dielectric relaxation associated with dipolar defect complex in PbZrxTi1-xO3 multilayer
Journal of Infrared and Millimeter Waves, 2009, 28: 321.Journal ArticleGuo M, Meng X J, Yang P X, Chu J H
SYNTHESIS AND CHARACTERIZATION OF Bi2Cu0.1V0.9O5.35-delta SOLID ELECTROLYTE VIA CHEMICAL SOLUTION PROCESS
Journal of Infrared and Millimeter Waves, 2009, 28: 259-262.Journal ArticleGuo M, Deng H M, Yang P X, Chu J H
The influence of annealing temperatures on the properties of Bi2VO5.5/LaNiO3/Si thin films
Materials Letters, 2009, 63: 1535-1537.Journal ArticleGuo F M, Zhan G Z, Han J Q, Xu B, Zhou X L, Li J W, Xiong D Y, Ye Y C, Wang Y P, Wang X H, Chu J H
Dumping design of CTIA readout circuit based on a low-dimensional quantum structure photoelectric sensor
Proceedings of the SPIE - The International Society for Optical Engineering, 2009, 7383: 73834Z.Journal ArticleGao Y Q, Huang Z M, Hou Y, Wu J, Ge Y J, Chu J H
Optical properties of Mn1.56Co0.96Ni0.48O4 films studied by spectroscopic ellipsometry
Applied Physics Letters, 2009, 94: 011106.Journal ArticleGao K H, Zhou W Z, Zhou Y M, Yu G, Lin T, Guo S L, Chu J H, Dai N, Gu Y, Zhang Y G
Austing D G. Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well
Applied Physics Letters, 2009, 94: 152107.Journal ArticleGao K H, Yu G, Zhou Y M, Zhou W Z, Lin T, Chu J H, Dai N
SpringThorpe A J, Austing D G. Transport properties of AlGaAs/GaAs parabolic quantum wells
Journal of Applied Physics, 2009, 105: 013712Journal ArticleGao K H, Yu G, Zhou Y M, Zhou W Z, Lin T, Chu J H, Dai N, Austing D G, Gu Y, Zhang Y G
Experimental study of weak antilocalization effects in a two-dimensional system: Anomalous dephasing rate
Physical Review B, 2009, 79: 085310.Journal ArticleBai W, Meng X J, Zhu X, Jing C B, Gao C, Chu J H
Shape-tuned synthesis of dispersed magnetite submicro particles with good magnetic properties
Physica E-Low-Dimensional Systems & Nanostructures, 2009, 42: 141-145.ConferenceBai W, Meng X J, Yang J, Lin T, Zhang Q X, Ma J H, Sun J L, Chu J H
Magnetoelectric, pinning and depinning properties in Pb(Zr0.5Ti0.5)O-3/Fe3O4 composite films
Journal of Physics D-Applied Physics, 2009, 42: 145008.Journal ArticleBai W, Meng X J, Lin T, Tian L, Jing C B, Liu W J, Ma J H, Sun J L, Chu J H
Effect of Fe-doping concentration on microstructure, electrical, and magnetic properties of Pb(Zr0.5Ti0.5)O-3 thin films prepared by chemical solution deposition
Journal of Applied Physics, 2009, 106: 124908.
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2008
Journal ArticleZhou W Z, Lin T, Shang L Y, Sun L, Gao K H, Zhou Y M, Yu G, Tang N, Han K, Shen B, Guo S L, Gui Y S, Chu J H
Weak antilocalization and beating pattern in high electron mobility AlxGa1-xN/GaN two-dimensional electron gas with strong Rashba spin-orbit coupling
Journal of Applied Physics, 2008, 104: 053703Journal ArticleZhou W Z, Lin T, Shang L Y, Sun L, Gao K H, Zhou Y M, Yu G, Tang N, Han K, Shen B, Guo S L, Gui Y S, Chu J H
Influence of the illumination on weak antilocalization in an AlxGa1-xN/GaN heterostructure with strong spin-orbit coupling
Applied Physics Letters, 2008, 93: 262104.Journal ArticleZhao X Y, Liu S J, Chu J H, Dai N, Hu G J
Ferroelectric and optical properties of Pb(ZrxTi1-x)O-3 bilayers
Acta Physica Sinica, 2008, 57: 5968-5972.Journal ArticleZhang X D, Meng X J, Sun J L, Lin T, Ma J H, Chu J H, Wang N, Dho J
The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing
Journal of Materials Research, 2008, 23: 2846-2853.Journal ArticleZhang X D, Meng X J, Sun J L, Lin T, Ma J H, Chu J H, Kwon D Y, Kim C W, Kim B G
Preparation of LaNiO3 thin films with very low room-temperature electrical resistivity by room temperature sputtering and high oxygen-pressure processing
Thin Solid Films, 2008, 516: 919-924.Journal ArticleZhang X D, Meng X J, Sun J L, Lin T, Ma J H, Chu J H, Kwon D Y, Kim B G
Low-temperature preparation of sputter-deposited Pb(Zr0.52Ti0.48)O-3 thin films through high oxygen-pressure annealing
Journal of Crystal Growth, 2008, 310: 783-787.Journal ArticleZhang X D, Meng X J, Sun J L, Lin T, Ma J H, Chu J H, Dho J H
Low-temperature crystallization of PbZr0.3Ti0.7O3 film induced by high-oxygen-pressure processing
Japanese Journal of Applied Physics, 2008, 47: 7523-7526.ConferenceZhan G Z, Guo F M, Lei W, Huang J, Zhu Z Q, Chu J H
A specific architectures of CMOS readout for resonant-cavity-enhanced devices
proceedings of the Progress in Electromagnetics Research Symposium (PIERS 2008), Hangzhou, PEOPLES R CHINA, F Mar 24-28, 2008, 2008.Journal ArticleYue F Y, Wu J, Chu J H
Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra
Applied Physics Letters, 2008, 93: 131909.Journal ArticleYue F Y, Chu J H, Wu J, Hu Z G, Li Y W, Yang P X
Modulated photoluminescence of shallow levels in arsenic-doped Hg(1-x)Cd(x)Te (x approximate to 0.3) grown by molecular beam epitaxy
Applied Physics Letters, 2008, 92: 121916.Journal ArticleYu P, Wang F F, Zhou D, Ge W W, Zhao X Y, Luo H S, Sun J L, Meng X J, Chu J H
Growth and pyroelectric properties of high Curie temperature relaxor-based ferroelectric Pb(In(1/2)Nb(1/2))O(3)-Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) ternary single crystal
Applied Physics Letters, 2008, 92: 252907.Journal ArticleYu J, Chu J H
Progress and prospect for high temperature single-phased magnetic ferroelectrics
Chinese Science Bulletin, 2008, 53: 2097-2112.Journal ArticleYu G, Dai N, Chu J H, Poole P J, Studenikin S A
Experimental study of the spin-orbit quantum interference effect in a high-mobility In(x)Ga(1-x)As/InP quantum well structure with strong spin-orbit interaction
Physical Review B, 2008, 78: 035304.Journal ArticleYang J, Meng X J, Shen M R, Gao C, Sun J L, Chu J H
Evolution of electric field amplitude dependent scaling behaviors in ferroelectric films over a broad temperature range
Applied Physics Letters, 2008, 93: 092908.Journal ArticleYang J, Meng X J, Shen M R, Fang L, Wang J L, Lin T, Sun J L, Chu J H
Hopping conduction and low-frequency dielectric relaxation in 5 mol % Mn doped (Pb,Sr)TiO3 films
Journal of Applied Physics, 2008, 104: 104113.Journal ArticleXia L, Chu J H, Longxia L, Ning D, Fujia Z
Investigation of room temperature nuclear radiation CdZnTe pixel array detector
Journal of Optoelectronics·Laser, 2008, 19: 751-753.Journal ArticleWei L, Fangmin G, Dapeng H, Ziqiang Z, Chu J H
Simulation and Optimizing for Heterostructure of InGaAs/InP Avalanche Photo-detectors
Laser and Infrared, 2008, 38: 1000-1003.Journal ArticleWei J Z, Shen X Y, Ding G H, Huang Z M, Zhao L, Zhou Y, Chu J H
Infrared spectrums and temporal curve of Indirect moxibustion with common monkshood cake
Journal of Infrared and Millimeter Waves, 2008, 27: 247-251.Journal ArticleWang J L, Meng X J, Yuan S Z, Yang J, Sun J L, Xu H S, Chu J H
High electric tunability of relaxor ferroelectric Langmuir-Blodgett terpolymer films
Applied Physics Letters, 2008, 93: 192905.Journal ArticleTang N, Shen B, He X W, Han K, Tang Y Q, Yang Z J, Qin Z X, Zhang G Y, Lin T, Zhu B, Zhou W Z, Shang L Y, Chu J H
Influence of the illumination on the spin splitting of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
Physica Status Solidi C - Current Topics in Solid State Physics, 2008, 5: 2339.ConferenceTang N, Shen B, Han K, Yang Z-J, Qin Z-X, Zhang G-Y, Lin T, Zhou W-Z, Shang L-Y, Chu J H, Huang R
Magnetotransport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures under illumination
proceedings of the 9th International Conference on Solid-State and Integrated-Circuit Technology, Beijing, PEOPLES R CHINA, F Oct 20-23, 2008, 2008. IEEE.Journal ArticleShao J, Ma L L, Lu X, Wu J, Li Z F, Guo S L, He L, Lu W, Chu J H
Recent progress and potential impact of modulation spectroscopy for narrow-gap HgCdTe
Journal of Infrared and Millimeter Waves, 2008, 27: 1.Journal ArticleShao J, Ma L L, Lu X, Lu W, Wu J, Zha F X, Wei Y F, Li Z F, Guo S L, Yang J R, He L, Chu J H
Evolution of infrared photoreflectance lineshape with temperature in narrow-gap HgCdTe epilayers
Applied Physics Letters, 2008, 93: 131914.Journal ArticleShang L-Y, Yu G-L, Lin T, Zhou W-Z, Guo S-L, Dai N, Chu J H
Spin splitting in In(0).(53)Ga(0.47)As/InP heterostructures
Chinese Physics Letters, 2008, 25: 2194-2197.Journal ArticleShang L Y, Lin T, Zhou W Z, Li D L, Gao H L, Zeng Y P, Guo S L, Yu G L, Chu J H
Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well
Acta Physica Sinica, 2008, 57: 5232-5236.Journal ArticleShang L Y, Lin T, Zhou W Z, Guo S L, Li D L, Gao H L, Cui L J, Zeng Y P, Chu J H
Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands
Acta Physica Sinica, 2008, 57: 3818-3822.ConferenceQin J H, Ma J H, Huang Z M, Chu J H
Voltage-controlled change of MIS reflectivity in visible and near infrared band
proceedings of the Thin Film Physics and Applications, Sixth International Conference, Shanghai, PEOPLES R CHINA, F Sep 25-28, 2007, 2008.ConferenceQin J H, Ma J H, Huang Z M, Chu J H
Voltage-controlled change of MIS reflectivity in visible and near infrared band
proceedings of the Thin Film Physics and Applications, Sixth International Conference, Shanghai, PEOPLES R CHINA, F Sep 25-28, 2007, 2008.ConferenceQin J H, Ma J H, Huang Z M, Chu J H
Study on a novel optical readout ferroelectric device based on MIS for uncooled infrared imaging
proceedings of the Conference on Advanced Materials and Devices for Sensing and Imaging III, Beijing, PEOPLES R CHINA, F Nov 12-14, 2007, 2008.ConferenceQin J, Huang Z, Hou Y, Chu J H, Zhang D H
Dual-modulated and dual-light-path spectrometer for modulated reflectance measurement
proceedings of the IEEE Photonics Global, Singapore FDec 08-11, 2008, 2008.ConferenceMiao F, Zhang J, Xu S, Wang L, Chu J H, Cao Z, Zhan P, Wang Z
Fabrication of a reflective mirror within wide incidence angles for mid-infrared wavelength
proceedings of the International Workshop on Metamaterials Nanjing, PEOPLES R CHINA, F Nov 09-12, 2008, 2008. IEEE AP-MTT-EMC.Journal ArticleMeng X J, Kliem H, Lin T, Chu J H
Low-temperature dielectric properties of Langmuir-Blodgett ferroelectric polymer films
Journal of Applied Physics, 2008, 103: 034110.Journal ArticleMa J H, Sun J L, Qin J H, Gao Y H, Lin T, Shen H, Shi F W, Meng X J, Chu J H, Liu S J, Li J
Electron injection of SrTiO(3)/Si interfacial layer
Applied Physics Letters, 2008, 93: 102903ConferenceMa J H, Pin J H, Huang Z M, Gao Y H, Lin T, Shi F W, Sun J L, Chu J H
Highly (h00) oriented growth of SrTiO3 thin films on Si(100) substrates by RF magnetron sputtering and their optical properties
proceedings of the 6th International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 25-28, 2007, 2008.Journal ArticleLi-Yan S, Tie L, Wen-Zheng Z, Zhi-Ming H, Dong-Lin L, Hong-Ling G, Li-Jie C, Yi-Ping Z, Shao-Ling G, Chu J H
Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands
Acta Physica Sinica, 2008, 57: 2481-2485.ConferenceLiu P F, Meng X J, Sun J L, Ma J H, Chu J H
Phase diagrams and in-plane anisotropic misfit strains of (110) Ba0.6Sr0.4TiO3 thin films grown on (001) orthorhombic NdGaO3 substrate
proceedings of the 6th International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 25-28, 2007, 2008.Journal ArticleLiu A Y, Xue J Q, Meng X J, Sun J L, Huang Z M, Chu J H
Infrared optical properties of Ba(Zr0.20Ti0.80)O-3 and Ba(Zr0.30Ti0.70)O-3 thin films prepared by sol-gel method
Applied Surface Science, 2008, 254: 5660-5663.Journal ArticleLi Y W, Hu Z G, Yue F Y, Yang P X, Qian Y N, Cheng W J, Ma X M, Chu J H
Oxygen-vacancy-related dielectric relaxation in BiFeO3 films grown by pulsed laser deposition
Journal of Physics D-Applied Physics, 2008, 41: 215403.Journal ArticleLi Y W, Hu Z G, Sun J L, Meng X J, Chu J H
Preparation and properties of CaCu3Ti4O12 thin film grown on LaNiO3-coated silicon by sol-gel process
Journal of Crystal Growth, 2008, 310: 378-381.Journal ArticleLi Y W, Hu Z G, Sun J L, Meng X J, Chu J H
Effects of LaNiO3 bottom electrode on structural and dielectric properties of CaCu3Ti4O12 films fabricated by sol-gel method
Applied Physics Letters, 2008, 92: 042901.Journal ArticleLi X, Chu J H, Li L, Dai N, Sun J, Zhang f
Development of room temperature CdZnTe nuclear radiation detector
Semiconductor Technology, 2008, 33: 941-946.Journal ArticleLei W, Guo F M, Lu W, Xiong D Y, Zhu Z Q, Chu J H
Based Simulation of High Gain and Low Breakdown Voltage InGaAs/InP Avalanche Photodiode
proceedings of the 8th International Conference on Numerical Simulation of Optoelectronic Devices Nottingham, ENGLAND, F Sep 01-04, 2008, 2008 IEEE Lasers & Electro Opt Soc.Journal ArticleHu Z G, Li Y W, Zhu M, Zhu Z Q, Chu J H
Structure and optical properties of ferroelectric PbZr0.40Ti0.60O3 films grown on LaNiO3-coated platinized silicon determined by infrared spectroscopic ellipsometry
Journal of Physical Chemistry C, 2008, 112: 9737-9743.Journal ArticleHu Z G, Li Y W, Zhu M, Zhu Z Q, Chu J H
Microstructural and optical investigations of sol-gel derived ferroelectric BaTiO3 nanocrystalline films determined by spectroscopic ellipsometry
Physics Letters A, 2008, 372: 4521-4526.Journal ArticleHu Z G, Li Y W, Zhu M, Zhu Z Q, Chu J H
Composition dependence of dielectric function in ferroelectric BaCo(x)Ti(1-x)O(3) films grown on quartz substrates by transmittance spectra
Applied Physics Letters, 2008, 92: 081904Journal ArticleHu Z G, Li Y W, Zhu M, Yue F Y, Zhu Z Q, Chu J H
Growth and ellipsometric characterizations of highly (111)-oriented Bi2Ti2O7 films on platinized silicon by metal organic decomposition method
Journal of Vacuum Science & Technology A, 2008, 26: 1287-1292.Journal ArticleHu Z G, Li W W, Wu J D, Sun J, Shu Q W, Zhong X X, Zhu Z Q, Chu J H
Optical properties of pulsed laser deposited rutile titanium dioxide films on quartz substrates determined by Raman scattering and transmittance spectra
Applied Physics Letters, 2008, 93: 181910.Journal ArticleHu G J, Shang J L, Zhang T, Xie J, Sun J L, Chu J H, Dai N
Ferroelectric and dielectric properties of lead zirconate titanate multilayers
Journal of Infrared and Millimeter Waves, 2008, 27: 169.Journal ArticleHou Y, Xue J Q, Huang Z M, Li T X, Ge Y J, Chu J H
Structure-related optical properties of Bi4-xLaxTi3O12 thin films grown on Pt/Ti/SiO2/Si substrate
Thin Solid Films, 2008, 517: 901-904.Journal ArticleHou Y, Huang Z M, Gao Y Q, Ge Y J, Wu J, Chu J H
Characterization of Mn(1.56)Co(0.96)Ni(0.48)O(4) films for infrared detection
Applied Physics Letters, 2008, 92: 202115.Journal ArticleGe Y J, Huang Z M, Hou Y, Qin J H, Li T X, Chu J H
Low temperature growth of manganese cobalt nickelate films by chemical deposition
Thin Solid Films, 2008, 516: 5931-5934.Journal ArticleGe Y J, Huang Z M, Hou Y, Qin J H, Li T X, Chu J H
Infrared Spectroscopic Elliposimetry and Crystallization of Manganese Cobalt Nickelate Films Prepared by Chemical Deposition at Low Temperature
Journal of Infrared and Millimeter Waves, 2008, 27: 413-416.Journal ArticleGe Y, Huang Z, Hou Y, Li T, Chu J H
Crystallization of manganese cobalt nickelate films prepared by chemical deposition
proceedings of the 6th International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 25-28, 2007, 2008.Journal ArticleGao Y H, Sun J L, Ma J H, Meng X J, Chu J H
Improved dielectric and electrical properties of (Ba,Sr)TiO3 thin films using Pt/LaNiO3 as the top-electrode material
Applied Physics a-Materials Science & Processing, 2008, 91: 541-544.ConferenceGao Y H, Ma J H, Sun J L, Meng X J, Chu J H
Growth of highly (h00) oriented barium strontium titanate films on silicon substrates using conducting LaNiO3 electrode
proceedings of the Sixth International Conference on Thin Film Physics and Applications, F, 2008 SPIE.Journal ArticleDuan C G, Velev J P, Sabirianov R F, Zhu Z, Chu J H, Jaswal S S, Tsymbal E Y
Surface magnetoelectric effect in ferromagnetic metal films
Phys Rev Lett, 2008, 101: 137201.Journal ArticleChu J H
Technical development of ferroelectric thin film uncooled infrared detector
Infrared Laser Engineering, 2008, 37: 9-13.Journal ArticleBai W, Zhu X, Zhu Z Q, Chu J H
Synthesis of zinc oxide nanosheet thin films and their improved field emission and photoluminescence properties by annealing processing
Applied Surface Science, 2008, 254: 6483-6488.Journal ArticleWu, X.; Uchikoshi, J.; Hirokane, T.; Yamada, R.; Takeuchi, A.; Arima, K.; Morita, M.
Characterization of Pinhole in Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Transmission Microscopy
In: Journal of the Electrochemical Society, vol. 155, no. 11, pp. H864-H868, 2008, ISSN: 0013-4651.Patterned oxides buried in bonded silicon-on-insulator (SOI) wafers before thinning have been characterized by near-IR scattering topography and a microscopy combination system. Micron-scaled pinholes in patterned oxides buried in bonded SOI wafers have been observed by the scattering topography. Edges of the patterned oxides have also been observed by both scattering topography and transmission microscopy. With the combination of scattering topography and transmission and reflection microscopy, this system is effective to evaluate the visibility of patterned oxides buried in bonded SOI wafers. (C) 2008 The Electrochemical Society.
@article{RN9, title = {Characterization of Pinhole in Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Transmission Microscopy}, author = {X. Wu and J. Uchikoshi and T. Hirokane and R. Yamada and A. Takeuchi and K. Arima and M. Morita}, doi = {10.1149/1.2971178}, issn = {0013-4651}, year = {2008}, date = {2008-01-01}, urldate = {2008-01-01}, journal = {Journal of the Electrochemical Society}, volume = {155}, number = {11}, pages = {H864-H868}, abstract = {Patterned oxides buried in bonded silicon-on-insulator (SOI) wafers before thinning have been characterized by near-IR scattering topography and a microscopy combination system. Micron-scaled pinholes in patterned oxides buried in bonded SOI wafers have been observed by the scattering topography. Edges of the patterned oxides have also been observed by both scattering topography and transmission microscopy. With the combination of scattering topography and transmission and reflection microscopy, this system is effective to evaluate the visibility of patterned oxides buried in bonded SOI wafers. (C) 2008 The Electrochemical Society.}, keywords = {原位电镜, 可靠性}, pubstate = {published}, tppubtype = {article} }
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2007
Journal ArticleZhou W-Z, Lin T, Shang L-Y, Huang Z-M, Cui L-J, Li D-L, Gao H-L, Zeng Y-P, Guo S-L, Gui Y-S, Chu J H
Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems
Acta Physica Sinica, 2007, 56: 4099-4104.Journal ArticleZhou W Z, Lin T, Shang L Y, Yu G, Huang Z M, Guo S L, Gui Y S, Dai N, Chu J H, Cui L J, Li D L, Gao H L, Zeng Y P
Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well
Solid State Communications, 2007, 143: 300-303.Journal ArticleZhou W Z, Lin T, Shang L Y, Huang Z M, Zhu B, Cui L J, Gao H L, Li D L, Guo S L, Gui Y S, Chu J H
Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers
Acta Physica Sinica, 2007, 56: 4143-4147.Journal ArticleZhou W Z, Huang Z M, Qiu Z J, Lin T, Shang L Y, Li D L, Gao H L, Cui L J, Zeng Y P, Guo S L, Gui Y S, Dai N, Chu J H
Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well
Solid State Communications, 2007, 142: 393-397.Journal ArticleYue F Y, Shao J, Wei Y F, Lu X A, Wei H A, Yang J R, Chu J H
Temperature-dependent absorption spectra investigation of shallow levels in HgCdTe grown by liquid phase epitaxy
Acta Physica Sinica, 2007, 56: 2878-2881.Journal ArticleYang J, Chu J H, Shen M R
Analysis of diffuse phase transition and relaxorlike behaviors in Pb0.5Sr0.5TiO3 films through dc electric-field dependence of dielectric response
Applied Physics Letters, 2007, 90: 242908.Journal ArticleWang G S, Zhang Y Y, Mao C L, Dong X L, Chu J H
Composition dependence of structural and optical properties for sol-gel derived (100)-oriented Ba1-xSrxTiO3 thin films
Applied Physics Letters, 2007, 91: 061104.Journal ArticleWan L, Li Y W, Meng X J, Sun J L, Yuan X Z, Shangguan J, Chu J H
Observation of antiphase domains in BiFeO3 thin films by X-ray diffraction
Physica B-Condensed Matter, 2007, 391: 124-129.Journal ArticleTang N, Shen B, He X W, Han K, Yang Z J, Qin Z X, Zhang G Y, Lin T, Zhu B, Zhou W Z, Shang L Y, Chu J H
Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in AlxGa1-xN/GaN heterostructures
Physical Review B, 2007, 76: 155303.Journal ArticleSun L, Chu J H, Feng C, Chen L
Analysis of relaxor mechanism and structural distortion for SrBi1.6Nd0.4Nb2O9 bismuth-layer-structured ceramics
Applied Physics Letters, 2007, 91: 242902.Journal ArticleShao J, Yue F Y, Lu X, Lu W, Huang W, Li Z F, Guo S L, Chu J H
Photomodulated infrared spectroscopy by a step-scan Fourier transform infrared spectrometer (vol 89, pg 182121, 2006)
Applied Physics Letters, 2007, 90: 079902.Journal ArticleShao J, Lu X, Lu W, Yue F Y, Huang W, Li N, Wu J, He L, Chu J H
Cutoff wavelength of Hg1-xCdxTe epilayers by infrared photoreflectance spectroscopy
Applied Physics Letters, 2007, 90: 171101.Journal ArticleShao J, Lu W, Yue F, Lu X, Huang W, Li Z, Guo S, Chu J H
Photoreflectance spectroscopy with a step-scan Fourier-transform infrared spectrometer: technique and applications
Rev Sci Instrum, 2007, 78: 013111.Journal ArticleShao J, Lu W, Lu X, Yue F Y, Li Z F, Guo S L, Chu J H
Modulated photoluminescence spectroscopy with a step-scan Fourier transform infrared spectrometer (vo 77, art no 063104, 2006)
Review of Scientific Instruments, 2007, 78: 029901.Journal ArticleMeng X J, Remiens D, Detalle M, Dkhil B, Sun J L, Chu J H
Critical temperatures of 70%Pb(Mg1/3Nb2/3)O-3-30%PbTiO3 thin films investigated by dielectric, ferroelectric, and structural measurements
Applied Physics Letters, 2007, 90: 132904.Journal ArticleMeng X J, Kliem H, Lin T, Chu J H
Electric field induced conversion in the nature of the phase transition from the first order to the second order for Langmuir-Boldgett polymer films
Applied Physics Letters, 2007, 91: 102903.Journal ArticleMa J H, Meng X J, Sun J L, Xue J Q, Hu Z G, Shi F W, Lin T, Chu J H
Structural and optical properties of Bi3.25Nd0.75Ti3O12 ferroelectric thin films
Applied Physics a-Materials Science & Processing, 2007, 88: 439-442.Journal ArticleLu X, Chu J H
Lattice thermal conductivity in a Si/Ge/Si heterostructure
Journal of Applied Physics, 2007, 101: 114323.Journal ArticleLiu A Y, Xue J Q, Hou Y, Ge Y J, Huang Z M, Chu J H
Optical characteristics of PMNT thin films in visible and mid-infrared regions
Journal of Infrared and Millimeter Waves, 2007, 26: 405-408.Journal ArticleLin T, Sun J L, Meng X J, Ma J H, Shi F W, Zhang X D, Wang L, Chen J, Chu J H
Ferroelectric film thickness dependence of properties of infrared detector with an SiO2 aerogel thermal insulation layer
Journal of Infrared and Millimeter Waves, 2007, 26: 329.Journal ArticleLin T, Sun J L, Meng X J, Ma J H, Shi F W, Chen J, Chu J H
The influence of dead layers on the voltage response of ferroelectric film infrared detectors
Integrated Ferroelectrics, 2007, 91: 97-102.Journal ArticleLi Y W, Xue J Q, Sun J L, Meng X J, Huang Z M, Chu J H, Ding L H, Zhang W F
Infrared optical properties of BiFeO3 thin films prepared by chemical solution deposition
Applied Physics a-Materials Science & Processing, 2007, 87: 125-128.Journal ArticleLi Y W, Hu Z G, Yue F Y, Yang G Y, Shi W Z, Meng X J, Sun J L, Chu J H
Properties of highly (100) oriented Pb(Mg1∕3,Nb2∕3)O3–PbTiO3 films on LaNiO3 bottom electrodes
Applied Physics Letters, 2007, 91: 232912.Journal ArticleHu Z G, Li Y W, Yue F Y, Zhu Z Q, Chu J H
Temperature dependence of optical band gap in ferroelectric Bi3.25La0.75Ti3O12 films determined by ultraviolet transmittance measurements
Applied Physics Letters, 2007, 91: 221903.Journal ArticleHu G J, Hong X K, Chu J H, Dai N
Ferroelectric and optical properties of quasiperiodic PbZr0.5Ti0.5O3 multilayers grown on quartz wafers
Applied Physics Letters, 2007, 90: 162902.Journal ArticleHu G J, Hong X K, Chen J, Chu J H, Dai N
Formation mechanism of periodical ferroelectric multilayers with high optical reflectivity
Journal of Infrared and Millimeter Waves, 2007, 26: 89-91.Journal ArticleHong X K, Hu G J, Shang J L, Bao J, Chu J H, Dai N
Ba0.9Sr0.1TiO3-based optical microcavities fabricated by chemical solution deposition
Applied Physics Letters, 2007, 90: 251911.Journal ArticleHong X K, Hu G J, Chen J, Chu J H, Dai N
Structural and electric properties of sol-gel-derived Ba0.9Sr0.1TiO3 multilayers
Journal of the American Ceramic Society, 2007, 90: 1280-1282.Journal ArticleHan K, Shen B, Tang N, Tang Y Q, He X W, Qin Z X, Yang Z J, Zhang G, Lin T, Zhu B, Zhou W Z, Chu J H
Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in AlxGa1-xN/GaN heterostructures
Physics Letters A, 2007, 366: 267-270.Journal ArticleGao Y H, Shen H, Ma J H, Xue J Q, Sun J L, Meng X J, Chu J H, Wang P N
Surface chemical composition and optical properties of nitrogen-doped Ba0.6Sr0.4TiO3 thin films
Journal of Applied Physics, 2007, 102: 064106.Journal ArticleChu J H, Meng X J
Study on the ferroelectric thin films tor uncooled infrared detection
Ferroelectrics, 2007, 352: 260-272.ConferenceWu, X.; Miura, K.; Nakamae, K.
Methodology for Layout-Based Diagnosis of VLSI Chips Considering Temperature Distribution Conference
Institute of Electronics,Information and Communication Engineers (IEICE), 2007.@conference{nokey, title = {Methodology for Layout-Based Diagnosis of VLSI Chips Considering Temperature Distribution}, author = {X. Wu and K. Miura and K. Nakamae}, year = {2007}, date = {2007-09-10}, urldate = {2007-09-10}, booktitle = { Institute of Electronics,Information and Communication Engineers (IEICE)}, keywords = {芯片设计}, pubstate = {published}, tppubtype = {conference} }
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2006
Journal ArticleZhu B, Gui Y S, Zhou W Z, Shang L Y, Qiu Z J, Guo S L, Zhang F J, Chu J H
Magnetoresistance oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor
Acta Physica Sinica, 2006, 55: 2955-2960.Journal ArticleZhu B, Gui Y S, Zhou W Z, Shang L Y, Guo S L, Chu J H, Lu J, Tang N, Shen B, Zhang F J
The weak anti localization and localization phenomenon in AlGaN/GaN two-dimensional electron gas
Acta Physica Sinica, 2006, 55: 2498-2503.Journal ArticleZhu B, Gui Y S, Qiu Z J, Zhou W Z, Yao W, Guo S L, Chu J H, Jia Z F
Beating oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor
Acta Physica Sinica, 2006, 55: 786-790.Journal ArticleZhou W Z, Yao W, Zhu B, Qiu Z J, Guo S L, Lin T, Cui L J, Gui Y S, Chu J H
Magneto-transport characteristics of two-dimensional electron gas for Si delta-doped InAlAs/InGaAs single quantum well
Acta Physica Sinica, 2006, 55: 2044-2048.Journal ArticleZhang X D, Meng X J, Sun J L, Wang G S, Lin T, Chu J H
Low-temperature preparation of Pb(ZrxTi1-x)O-3 thin film
Integrated Ferroelectrics, 2006, 81: 123-128.Journal ArticleZhang X D, Meng X J, Sun J L, Wang G S, Lin T, Chu J H
Investigation of room temperature electrical resistivities of LaNiO3-delta thin films deposited by rf magnetron sputtering and high oxygen-pressure processing
Journal of Vacuum Science & Technology A, 2006, 24: 914-918.Journal ArticleYue F-y, Shao J, Lv X, Huang W, Chu J H
Modulated FTIR photoluminescence spectra study on narrow-gap HgCdTe liquid phase epitaxial films
proceedings of the Joint 31st International Conference on Infrared and Millimeter Waves/14th International Conference on Terahertz Electronics, Shanghai, PEOPLES R CHINA, F Sep 18-22, 2006, 2006.Journal ArticleYue F Y, Shao J, Lu X, Huang W, Chu J H, Wu J, Lin X C, He L
Anomalous temperature dependence of absorption edge in narrow-gap HgCdTe semiconductors
Applied Physics Letters, 2006, 89: 021912.Journal ArticleXue J Q, Huang Z M, Liu A Y, Hou Y, Meng X J, Chu J H
Optical properties of 92%Pb(Mg1/3Nb2/3)O-3-8%PbTiO3 thin films prepared by chemical solution deposition
Journal of Applied Physics, 2006, 100: 104107.Journal ArticleWu Y N, Huang Z M, Chen Y W, Chu J H
Measurement of polarization mode dispersion in fiber using wavelength scanning method
Journal of Infrared and Millimeter Waves, 2006, 25: 64-66.Journal ArticleTang N, Shen B, Wang M J, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H
Effective mass of the two-dimensional electron gas and band nonparabolicity in AlxGa1-xN/GaN heterostructures
Applied Physics Letters, 2006, 88: 172115.Journal ArticleTang N, Shen B, Wang M J, Yang Z J, Xu K, Zhang G Y, Gui Y S, Zhu B, Guo S L, Chu J H, Hoshino K, Arakawa Y
Influence of the magnetic field on the effective mass of the two-dimensional electron gas in AlxGa1-x/GaN heterostructures
Physica Status Solidi C - Current Topics in Solid State Physics, 2006, 3: 2246-2249.Journal ArticleTang N, Shen B, Wang M J, Han K, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H
Beating patterns in the oscillatory magnetoresistance originated from zero-field spin splitting in AlxGa1-xN/GaN heterostructures
Applied Physics Letters, 2006, 88: 172112.Journal ArticleTang N, Shen B, Wang M, Yang Z, Xu K, Zhang G, Gui Y, Zhu B, Guo S, Chu J H
Influence of Al composition on transport properties of two-dimensional electron gas in AlxGa1-xAs/GaN heterostructures
Chinese Journal of Semiconductors, 2006, 27: 235-238.Journal ArticleTang N, Shen B, Han K, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Shang L Y, Guo S L, Chu J H
Origin of split peaks in the oscillatory magnetoresistance in AlxGa1-xN/GaN heterostructures
Journal of Applied Physics, 2006, 100: 073704.Journal ArticleSun J L, Li Y W, Li T X, Lin T, Chen J, Meng X J, Chu J H
Electrical transport properties of BiFeO3 thin film
Journal of Infrared and Millimeter Waves, 2006, 25: 401-404.Journal ArticleSun J L, Li Y W, Li T X, Lin T, Chen J, Meng X J, Chu J H
The leakage current in BiFeO3 films derived by chemical solution deposition
Ferroelectrics, 2006, 345: 83-89.Journal ArticleShi F W, Meng X J, Wang G S, Sun J L, Lin T, Ma J H, Li Y W, Chu J H
The third-order optical nonlinearity of Bi3.25La0.75Ti3O12 ferroelectric thin film on quartz
Thin Solid Films, 2006, 496: 333-335.Journal ArticleShao J, Yue F Y, Lu X, Lu W, Huang W, Li Z F, Guo S L, Chu J H
Photomodulated infrared spectroscopy by a step-scan Fourier transform infrared spectrometer
Applied Physics Letters, 2006, 89: 182121.Journal ArticleShao J, Lu X, Yue F Y, Huang W, Guo S L, Chu J H
Magnetophotoluminescence study of GaxIn1-xP quantum wells with CuPt-type long-range ordering
Journal of Applied Physics, 2006, 100: 053522.Journal ArticleShao J, Lu W, Lu X, Yue F Y, Li Z F, Guo S L, Chu J H
Modulated photoluminescence spectroscopy with a step-scan Fourier transform infrared spectrometer
Review of Scientific Instruments, 2006, 77: 063104.Journal ArticleWang G S, Zhao Q, Meng X J, Shi F W, Sun J L, Chu J H
The Fatigue Properties of LaNiO3/PbZr0.4Ti0.6O3/LaNiO3 Heterostructures
Piezoelectrics and Acoustooptics, 2006, 28: 72-75.Journal ArticleMa S H, Li S H, Wang W C, Wang G S, Sun J L, Meng X J, Chu J H
Pyroelectric figure of merit in alternating hemicyanine/NC Langmuir-Blodgett films incorporating barium ions
Colloids and Surfaces a-Physicochemical and Engineering Aspects, 2006, 284: 74-77.ConferenceMa J H, Xue J Q, Meng X J, Sun J L, Lin T, Shi F W, Chu J H
Infrared optical properties of Bi4-xNdyTi3O12 thin films prepared by a chemical solution method
proceedings of the Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, Shanghai, China, F, 2006.Journal ArticleMa J H, Huang Z M, Meng X J, Liu S J, Zhang X D, Sun J L, Xue J Q, Chu J H, Li J
Optical properties of SrTiO3 thin films deposited by radio-frequency magnetron sputtering at various substrate temperatures
Journal of Applied Physics, 2006, 99: 033515.Journal ArticleLu X, Chu J H
Lattice thermal conductivity in a silicon nanowire with square cross section
Journal of Applied Physics, 2006, 100: 014305.Journal ArticleLu A Y, Meng X J, Xue J Q, Sun J L, Ma J H, Wang L, Chu J H
Optical properties of Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films prepared by chemical solution deposition
Acta Physica Sinica, 2006, 55: 3128-3131.Journal ArticleLiu A Y, Meng X J, Sun J L, Xue J Q, Ma J H, Wang L, Chu J H
Study on the electrical and optical properties of Pb(Mg1/3Nb2/3) O-3-PbTiO3 thin films deposited by a chemical solution method
Journal of Crystal Growth, 2006, 290: 127-130.Journal ArticleLi S H, Ma S H, Li B, Sun J L, Wang G S, Meng X J, Chu J H, Wang W C
Enhancement of ferroelectricity in Langmuir-Blodgett multilayer films of weak-polar organic molecules
Colloids and Surfaces a-Physicochemical and Engineering Aspects, 2006, 284: 419-423.Journal ArticleHuang Z M, Xue J Q, Liu S J, Hou Y, Chu J H, Zhang D H
Bound electrical charges in BaTiO3 ferroelectric thin films: Evidence for spontaneous polarization
Physical Review B, 2006, 73: 212104.Journal ArticleHuang Z M, Xue J Q, Hou Y, Chu J H, Zhang D H
Optical magnetic response from parallel plate metamaterials
Physical Review B, 2006, 74: 193105.Journal ArticleHuang Z M, Xue J Q, Ge Y J, Qin J H, Hou Y, Chu J H, Zhang D H
Temperature dependence of BaTiO3 infrared dielectric properties
Applied Physics Letters, 2006, 88: 212902.Journal ArticleHu G J, Hong X K, Sun J L, Chen J, Chu J H, Zhu D M, Dai N
Peculiar ferroelectric and dielectric properties of quasiperiodic PbZr0.4Ti0.6O3 multilayers
New Journal of Physics, 2006, 8: 316.Journal ArticleHu G J, Hong X K, Liu A Y, Chen J, Chu J H, Dai N
PbZr0.4Ti0.6O3-based reflectors with tunable peak wavelengths
Journal of the American Ceramic Society, 2006, 89: 1453-1454.Journal ArticleHong X K, Hu G J, Chen J, Chu J H, Dai N, Wu H Z
Ba0.9Sr0.1TiO3-based Bragg reflectors fabricated from one single chemical solution
Applied Physics Letters, 2006, 89: 082902.Journal ArticleCui L J, Zeng Y P, Wang B Q, Zhu Z P, Guo S L, Chu J H
Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates
Journal of Applied Physics, 2006, 100: 033705.
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2005
Journal ArticleZheng Z W, Shen B, Qiu Z J, Gui Y S, Tang N, Liu J, Chen D J, Zhang R, Shi Y, Zheng Y D, Guo S L, Chu J H, Hoshino K, Arakawa Y
Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
Applied Physics a-Materials Science & Processing, 2005, 80: 39-42.Journal ArticleZhao Q, Huang Z M, Hu Z G, Chu J H
A study on the thermostability of LaNiO3 films
Surface & Coatings Technology, 2005, 192: 336-340.Journal ArticleZhang X D, Meng X J, Sun J L, Lin T, Chu J H
Low-temperature preparation of highly (100)-oriented Pb(ZrxTi1-x)O-3 thin film by high oxygen-pressure processing
Applied Physics Letters, 2005, 86: 252902.Journal ArticleYao W, Qiu Z J, Gui Y S, Zheng Z W, Lu J, Tang N, Shen B, Chu J H
Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure
Acta Physica Sinica, 2005, 54: 2247-2251.Journal ArticleYang P X, Meng X J, Huang Z M, Chu J H
Ferroelectric polaron in layered perovskite ferroelectric thin films
Journal of Infrared and Millimeter Waves, 2005, 24: 1-6.Journal ArticleYang P X, Guo M, Shi M R, Meng X J, Huang Z M, Chu J H
Spectroscopic ellipsometry of SrBi2Ta2-xNbxO9 ferroelectric thin films
Journal of Applied Physics, 2005, 97: 106106.Journal ArticleWang G S, Zhao Q, Meng X J, Chu J H, Remiens D
Preparation of highly (100)-oriented LaNiO3 nanocrystalline films by metalorganic chemical liquid deposition
Journal of Crystal Growth, 2005, 277: 450-456.Journal ArticleSun J L, Meng X J, Ma J H, Lin T, Chen J, Dai N, Chu J H
Retention characteristics of Au/Bi3.25La0.75Ti3O12/Si metal-ferro-electric-semiconductor structure
Applied Physics a-Materials Science & Processing, 2005, 81: 389-392.Journal ArticleShi F-w, Meng X-j, Wang G-s, Lin T, Li Y-w, Ma J-h, Sun J-l, Chu J H
Effect of Mn doping on the electrical properties of PbZr0.5Ti0.5O3 ferroelectric thin film
Journal of Functional Materials and Devices, 2005, 11: 211-214.Journal ArticleShi F W, Meng X J, Wang G S, Lin T, Ma J H, Li Y W, Chu J H
The third-order optical nonlinearity of The pyrochlore phase 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) thin film on quartz
Physica B-Condensed Matter, 2005, 370: 277-280.Journal ArticleMa J H, Sun J L, Meng X J, Lin T, Shi F W, Chu J H
Dielectric and interface characteristics of SrTiO3 with a MIS structure
Acta Physica Sinica, 2005, 54: 1390-1395.Journal ArticleMa J H, Meng X J, Sun J L, Lin T, Shi F W, Wang G S, Chu J H
Effect of excess Pb on crystallinity and ferroelectnic properties of PZT(40/60) films on LaNiO3 coated Si substrates by MOD technique
Applied Surface Science, 2005, 240: 275-279.Journal ArticleMa J H, Meng X J, Sun J L, Lin T, Shi F W, Chu J H
Optical properties of SrTiO3 thin films prepared by metalorganic decomposition
Chinese Physics, 2005, 14: 610-614.Journal ArticleMa J H, Meng X J, Sun J L, Lin T, Shi F W, Chu J H
Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr0.4Ti0.6)O-3 thin films on LaNiO3 coated Si substrates
Materials Research Bulletin, 2005, 40: 221-228.Journal ArticleMa J H, Meng X J, Sun J L, Hu Z G, Chu J H
Optical properties of Bi3.25La0.75Ti3O12 and Bi3.25Nd0.75Ti3O12 thin films prepared by a chemical solution method
Acta Physica Sinica, 2005, 54: 3900-3904.Journal ArticleMa J H, Meng X J, Sun J L, Chu J H
Crystallinity and ferro electricity of MOD-derived Pb0.985La0.01(Zr0.4Ti0.6)O-3 thin films
Journal of Inorganic Materials, 2005, 20: 163-168.Journal ArticleMa J H, Meng X J, Sun J L, Chu J H
Anisotropic ferroelectric properties of MOD-derived Bi3.25Nd0.75Ti3O12 thin films
Journal of Inorganic Materials, 2005, 20: 430-434.Journal ArticleMa J H, Meng X J, Lin T, Liu S J, Zhang X D, Sun J L, Chu J H
Structural and electrical properties of SrTiO3 thin films as insulator of met al-ferro electric-insulator-semiconductor (MFIS) structures
Chinese Physics, 2005, 14: 2352-2359.Journal ArticleMa J H, Meng X J, Lin T, Liu S J, Sun J L, Chu J H
Leakage current mechanisms of SrTiO3 thin films with MIS structures
Integrated Ferroelectrics, 2005, 74: 189-197.Journal ArticleLiu S J, Chu J H
Theoretical study of monolithic dielectric bolometer by thermal diffusion equation
proceedings of the Infrared Components and Their Applications, Beijing, PEOPLES R CHINA, F Nov 08-11, 2004, 2005.Journal ArticleLiu A Y, Meng X J, Xue J Q, Sun J L, Chen J, Chu J H
Electrical and optical properties of Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films prepared by chemical solution deposition
Applied Physics Letters, 2005, 87: 072903.Journal ArticleLin T, Sun J L, Shi F W, Hu Z G, Chen J, Chu J H
The characteristic in infrared region of the TiO2 : Ti film
Infrared Physics & Technology, 2005, 46: 257-261.Journal ArticleLin T, Meng X J, Sun J L, Ma J H, Chu J H
Effect of LaNiO3 buffer layers on the structure and electrical properties of sol-gel-derived Pb(Mg1/3Nb2/3)O3PbTiO3 thin films
Applied Physics a-Materials Science & Processing, 2005, 81: 1025-1028.Journal ArticleLi Y W, Sun J L, Chen J, Meng X J, Chu J H
Structural, ferroelectric, dielectric, and magnetic properties of BiFeO3/Pb(Zr-0.5,Ti-0.5)O-3 multilayer films derived by chemical solution deposition
Applied Physics Letters, 2005, 87: 182902.Journal ArticleLi Y W, Sun J L, Chen J, Meng X J, Chu J H
Preparation and characterization of BiFeO3 thin films grown on LaNiO3-coated SrTiO3 substrate by chemical solution deposition
Journal of Crystal Growth, 2005, 285: 595-599.Journal ArticleHuang Z M, Chu J H, Wu Y N, Hou Y, Xue J Q, Tang D Y
Static effective charges of BaTiO3: Infrared spectroscopic ellipsometry study
Physical Review B, 2005, 72: 052106.Journal ArticleHu Z G, Shi F W, Huang Z M, Wu Y N, Wang G S, Chu J H
Spectroscopic ellipsometry investigations of PLT ferroelectric thin films with various La concentrations in the mid-infrared spectral region
Applied Physics a-Materials Science & Processing, 2005, 80: 841-846.Journal ArticleHu Z G, Huang Z M, Chu J H
Optical characterizations of ferroelectric Bi3.25La0.75Ti3O12 thin films from NIR to UV regions using spectroscopic ellipsometry
Trends in Semiconductor Research, 2005, 111-136.Journal ArticleHu G J, Chen J, An D L, Chu J H, Dai N
Fabrication of ferroelectric PbZr0.4Ti0.6O3 multilayers by sol-gel process
Applied Physics Letters, 2005, 86: 162905.Journal ArticleHou Y, Huang Z M, Xue J Q, Wu Y N, Shen X M, Chu J H
Study of the ferroelectricity in Bi2Ti2O7 by infrared spectroscopic ellipsometry
Applied Physics Letters, 2005, 86: 112905.Journal ArticleChu J H
Application of optical absorption transition effects and the development of semiconductor photo-electronic detectors
Wuli, 2005, 34: 840-847.
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2004
Journal ArticleZheng Z W, Shen B, Gui Y S, Qiu Z J, Jiang C P, Tang N, Liu J, Chen D J, Zhou H M, Zhang R, Shi Y, Zheng Y D, Guo S L, Chu J H, Hoshino K, Arakawa Y
Enhancement and anisotropy of the Landau g factor in modulation-doped Al0.22Ga0.78N/GaN heterostructures
Journal of Applied Physics, 2004, 95: 2473-2476.Journal ArticleZheng Z W, Bo S, Gui Y S, Qiu Z J, Tang N, Jiang C P, Zhang R, Yi S, Zheng Y D, Guo S L, Chu J H
Study on the subband properties of AlxGa1-x/GaN modulation-doped heterostructures
Acta Physica Sinica, 2004, 53: 596-600.Journal ArticleZhao Q, Huang Z, Hu Z, Zhang X, Chu J H
A Study on the Thermo-stability of LaNiO_3 Films
Piezoelectrics and Acoustooptics, 2004, 26: 221-224.Journal ArticleZhao Q, Hu Z G, Huang Z M, Wang G S, Chu J H
Study on the composition dependence of IR spectra on La-Ni-O thin films
Journal of Infrared and Millimeter Waves, 2004, 23: 95-98.Journal ArticleYu J, Meng X J, Sun J L, Huang Z M, Chu J H
Optical and electrical properties of highly (100)-oriented PbZr1-xTixO3 thin films on the LaNiO3 buffer layer
Journal of Applied Physics, 2004, 96: 2792-2799.Journal ArticleWang G-s, Shi F-w, Sun J-l, Meng X-j, Dai N, Chu J H
Effect of LaNiO3 buffer layer on properties of Pb(Zr,Ti)O3 thin films
Journal of Functional Materials and Devices, 2004, 10: 294-298.Journal ArticleWang G S, Meng X J, Sun J L, Chu J H, Remiens D
Ferroelectric properties of PbZr0.40Ti0.60O3/LaxSr1-xCoO3 heterostructures prepared by chemical solution routes
Integrated Ferroelectrics, 2004, 64: 277-288.Journal ArticleWang G S, Hu Z G, Huang Z M, Yu J, Shi F W, Lin T, Ma J H, Zhao Q, Sun J L, Meng X J, Guo S L, Chu J H
Infrared optical properties of PbZr0.4Ti0.6O3/La0.5Sr0.5CoO3 heterostructures on platinized silicon substrate
Applied Physics a-Materials Science & Processing, 2004, 78: 119-123.Journal ArticleShu X Z, Wu Y R, Chen X S, Chu J H
Finite difference time domain modeling of grating-coupled quantum well infrared photodetector
Journal of Infrared and Millimeter Waves, 2004, 23: 401-404.ConferenceShi F W, Wang G S, Meng X J, Sun J L, Chu J H
Heat-treating effect on the properties of Pb1-xLaxZr0.4Ti0.6)O-3 ferroelectric thin film prepared by a modified sol-gel process
proceedings of the Fifth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F May 31-jun 02, 2004, 2004.Journal ArticleShi F W, Hu Z G, Wang G S, Lin T, Ma J H, Huang Z M, Meng X J, Sun J L, Chu J H
Infrared optical properties of sol-gel Pb1-xLaxTiO3 ferroelectric thin films
Thin Solid Films, 2004, 458: 223-226.Journal ArticleQiu Z J, Gui Y S, Zheng Z W, Tang N, Lu J, Shen B, Dai N, Chu J H
Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructure
Solid State Communications, 2004, 129: 187-190.Journal ArticleQiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H
Spin-orbit and exchange interaction in a HgMnTe magnetic two-dimensional electron gas
Acta Physica Sinica, 2004, 53: 1977-1980.Journal ArticleQiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H
Giant Rashba spin splitting in HgTe/HgCdTe quantum wells
Acta Physica Sinica, 2004, 53: 1186-1190.Journal ArticleQiu Z J, Gui Y S, Lin T, Lu J, Tang N, Shen B, Dai N, Chu J H
Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements
Solid State Communications, 2004, 131: 37-40.Journal ArticleQiu Z J, Gui Y S, Lin T, Dai N, Chu J H, Tang N, Lu J, Shen B
Weak localization and magnetointersubband scattering effects in an AlxGa1-xN/GaN two-dimensional electron gas
Physical Review B, 2004, 69: 125335.Journal ArticleQiu Z J, Gui Y S, Guo S L, Dai N, Chu J H, Zhang X X, Zeng Y P
Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes
Applied Physics Letters, 2004, 84: 1961-1963.Journal ArticleQiu Z J, Gui Y S, Cui L J, Zeng Y P, Huang Z M, Shu X Z, Dai N, Guo S L, Chu J H
Magneto - Transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well
Journal of Infrared and Millimeter Waves, 2004, 23: 329-332.Journal ArticleMeng X J, Ma J H, Sun J L, Lin T, Yu J, Wang G S, Chu J H
Effect of substitution of vanadium on the structure and electrical properties of Bi3.25La0.75Ti3O12 thin films
Applied Physics a-Materials Science & Processing, 2004, 78: 1089-1091.Journal ArticleMa J H, Meng X J, Sun J L, Wang G S, Lin T, Shi F W, Chu J H
Silica aerogel thin films prepared at ambient pressure
Journal of Infrared and Millimeter Waves, 2004, 23: 465-468.Journal ArticleMa J H, Meng X J, Sun J L, Lin T, Shi F W, Chu J H
Ferroelectric and optical properties of Bi3.25Nd0.75Ti3O12 thin films prepared by a chemical solution method
Journal of Physics D-Applied Physics, 2004, 37: 3160-3164.Journal ArticleMa J H, Meng X J, Sun J L, Lin T, Chu J H
Structure and ferroelectric properties of Bi3.25La0.75Ti3O12 and Bi3'.25Nd0.75Ti3O12 thin films prepared by a MOD method
proceedings of the Fifth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F May 31-jun 02, 2004, 2004.Journal ArticleLu J, Shen B, Tang N, Chen D J, Zhao H, Liu D W, Zhang R, Shi Y, Zheng Y D, Qiu Z J, Gui Y S, Zhu B, Yao W, Chu J H, Hoshino K, Arakawa Y
Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation
Applied Physics Letters, 2004, 85: 3125-3127.Journal ArticleLiu S H, Zeng X B, Chu J H
Thermal-sensitive BST thin film capacitors for dielectric bolometer prepared by RF magnetron sputtering
Microelectronics Journal, 2004, 35: 601-603.Journal ArticleLiu A Y, Meng X J, Sun J L, Chu J H
Study on the structure and ferroelectric properties of sol-gel derived Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films
proceedings of the Fifth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F May 31-jun 02, 2004, 2004.Journal ArticleLi Y W, Sun J L, Meng X J, Zhang W F, Chu J H
Optical properties of BaTiO3 and Mn : BaTiO3 thin films deposited on fused quartz and silicon substrates using a sol-gel method
proceedings of the Fifth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F May 31-jun 02, 2004, 2004.Journal Article<p
Li Y W, Sun J L, Meng X J, Chu J H, Zhang W F
Structural and optical properties of Ba(Co-x,Ti1-x)O-3 thin films fabricated by sol-gel process
Applied Physics Letters, 2004, 85: 1964-1966.Journal ArticleLi X X, Lai Z Q, Wang G S, Sun J L, Zhao Q, Chu J H
Influence of deposition power on the composition, structure and properties of PZT thin films prepared by RF sputtering
Journal of Infrared and Millimeter Waves, 2004, 23: 313-316.Journal ArticleLi S H, Mu J, Wang W J, Ma S H, Sun J L, Chu J H, Wang W C
Polarization of hemicyanine Langmuir-Blodgett films
Chinese Physics Letters, 2004, 21: 952-954.Journal ArticleLi S H, Ma S H, Li B, Sun J L, Wang G S, Meng X J, Chu J H, Wang W C
Thickness dependence of ferroelectricity in hemicyanine Langmuir-Blodgett multilayer films
Acta Physico-Chimica Sinica, 2004, 20: 1253-1257.Journal ArticleJiang C P, Yang F H, Zheng H Z, Qiu Z J, Gui Y S, Guo S L, Chu J H, Shen B, Zheng Y D
Magnetointersubband oscillations of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
Chinese Physics Letters, 2004, 21: 915-918.Journal ArticleHu Z G, Wang S W, Huang Z M, Wu Y N, Lu W, Chu J H
Infrared optical properties of Bi2Ti2O7 thin films prepared by chemical solution decomposition technique
Journal of Infrared and Millimeter Waves, 2004, 23: 47-50.Journal ArticleHu Z G, Shi F W, Lin T, Huang Z M, Wang G S, Wu Y N, Chu J H
Infrared spectroscopic ellipsometry of (Pb, La)(Zr, Ti)O-3 thin films on platinized silicon
Physics Letters A, 2004, 320: 478-486.Journal ArticleHu Z G, Lai Z Q, Huang Z M, Wang G S, Shi F W, Chu J H
Optical properties of PZT amorphous thin films prepared by RF magnetron sputtering
Journal of Infrared and Millimeter Waves, 2004, 23: 181.Journal ArticleHu Z G, Huang Z M, Wu Y N, Zhao Q, Wang G S, Chu J H
Ellipsometric characterization of LaNiO3-x films grown on Si(111) substrates: Effects of oxygen partial pressure
Journal of Applied Physics, 2004, 95: 4036-4041.Journal ArticleHu Z G, Huang Z M, Wu Y N, Wang G S, Meng X J, Shi F W, Chu J H
Spectroscopic-ellipsometry characterization of the interface layer of PbZr0.40Ti0.60O3/LaNiO3/Pt multilayer thin films
Journal of Vacuum Science & Technology A, 2004, 22: 1152-1157.Journal ArticleHu Z G, Huang Z M, Wu Y N, Hu S H, Wang G S, Ma J H, Chu J H
Optical characterization of ferroelectric Bi3.25La0.75Ti3O12 thin films
European Physical Journal B, 2004, 38: 431-436.Journal ArticleHu S H, Meng X J, Hu G J, Chu J H, Dai N, Xu L, Liu L Y, Li D X
Preparation and optical waveguide property of metal alkoxide solution-derived Pb(Zr0.5Ti0.5)O-3 thick films
Applied Physics Letters, 2004, 84: 3609-3611.Journal ArticleHu S H, Hu G J, Meng X J, Wang G S, Sun J L, Guo S L, Chu J H, Dai N
The grain size effec of the Pb(Zr0.45Ti0.55)O-3 thin films deposited on LaNiO3-coated silicon by modified sol-gel process
Journal of Crystal Growth, 2004, 260: 109-114.Journal ArticleHu S H, Chen J, Hu Z G, Wang G S, Meng X J, Chu J H, Dai N
The optical properties of Bi3.25La0.75Ti3O12 thin films with different thickness prepared by chemical solution deposition
Materials Research Bulletin, 2004, 39: 1223-1229.Journal ArticleHu G J, Hu S H, Meng X J, Wang G S, Zhao Q, Sun J L, Chu J H, Dai N, Xu L, Liu L Y, Li D X
Fabrication of ferroelectric PbZrxTi1-xO3 thick films and their optical waveguide properties
Journal of Vacuum Science & Technology A, 2004, 22: 422-424.Journal ArticleHou Y, Lin T, Huang Z M, Wang G S, Hu Z G, Chu J H, Xu X H, Wang M
Electrical and optical properties of Bi2Ti2O7 thin films prepared by metalorganic decomposition method
Applied Physics Letters, 2004, 85: 1214-1216.Journal ArticleGui Y S, Becker C R, Dai N, Liu J, Qiu Z J, Novik E G, Schafer M, Shu X Z, Chu J H, Buhmann H, Molenkamp L W
Giant spin-orbit splitting in a HgTe quantum well
Physical Review B, 2004, 70: 115328.
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2003
Journal ArticleZheng Z W, Shen B, Jiang C P, Gui Y S, Someya T, Zhang R, Shi Y, Zheng Y D, Guo S L, Chu J H, Arakawa Y
Multisubband transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
Journal of Applied Physics, 2003, 93: 1651-1655.Journal ArticleZheng Z W, Shen B, Jiang C P, Gui Y S, Someya T, Tang N, Zhang R, Shi Y, Zheng Y D, Guo S L, Chu J H, Arakawa Y
Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
Optical Materials, 2003, 23: 139-141.Journal ArticleZheng Z W, Shen B, Gui Y S, Jiang C P, Tang N, Zhang R, Shi Y, Zheng Y D, Guo S L, Zheng G Z, Chu J H, Someya T, Arakawa Y
Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1-xN/GaN heterointerfaces
Applied Physics Letters, 2003, 82: 1872-1874.Journal ArticleZhao Q, Lai Z-q, Huang Z-m, Chen J, Chu J H
Optical and electric properties of rf-magnetron sputtered LaNiO3 thin film
Journal of Functional Materials and Devices, 2003, 9: 71-74.Journal ArticleZhao Q, Chu J H
The composition dependence of the rf-magnetron sputtered La-Ni-O films
Journal of Functional Materials, 2003, 34: 687-689.Journal ArticleZhao Q, Chu J H
Oxygen partial pressure dependence of the properties of sputtered LaNiO3 films
Journal of Functional Materials and Devices, 2003, 9: 262-266.Journal ArticleZhang M S, Yu J, Chu J H, Chen Q, Chen W C
Microstructures and photoluminescence of barium titanate nanocrystals synthesized by the hydrothermal process
Journal of Materials Processing Technology, 2003, 137: 78-81.Journal ArticleYu J, Chu J H, Tang D Y
Optical and Electrical Properties of Low-Dimensional Ferroelectric Materials and Device Physics of Ferroelectric Thin Film Infrared Focal Plane Arrays
Journal of the Graduate School of the Academy of Sciences, 2003, 20: 254-259.Journal ArticleWang G S, Meng X J, Lai Z Q, Yu J, Sun J L, Guo S L, Chu J H
Structural and optical properties of Bi3.25La0.75Ti3O12 ferroelectric thin films prepared by chemical solution methods
Applied Physics a-Materials Science & Processing, 2003, 76: 83-86.Journal ArticleWang G S, Hu Z G, Shi F W, Meng X J, Sun J L, Zhao Q, Guo S L, Chu J H
Structureal and optical properties of PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 multilayer thin films prepared by chemical solution routes
Journal of Infrared and Millimeter Waves, 2003, 22: 23-26.Journal ArticleWang G, Lai Z, Li X, Meng X, Sun J, Zhao Q, Lin T, Chu J H, Hu J
La-modified PbTiO3 Ferroelectric Thin Films Prepared by Sol-Gel Process
Piezoelectrics and Acoustooptics, 2003, 25: 483-485,493.Journal ArticleWan Y B, Zhao Q, Guo X G, Chen J, Chu J H, Yoo S I
Raman and FT-IR spectra of ferroelecdtric potassium lithium niobate crystal
Journal of Infrared and Millimeter Waves, 2003, 22: 361-364.Journal ArticleTang N, Shen B, Zheng Z W, Liu J, Chen D J, Lu J, Zhang R, Shi Y, Zheng Y D, Gui Y S, Jiang C P, Qiu Z J, Guo S L, Chu J H, Hoshino K, Someya T, Arakawa Y
Magnetoresistance oscillations induced by intersubband scattering of two-dimensional electron gas in Al0.22Ga0.78N/GaN heterostructures
Journal of Applied Physics, 2003, 94: 5420-5422.Journal ArticleShen X Y, Ding G H, Chu J H, Huang Z M, Yao W, Zhou Y, Wei J Z, Chu L X, Zhang H M
Comparison of infrared radiation spectrum of traditional moxibustion substitute moxibustion and acupoints of human body
Journal of Infrared and Millimeter Waves, 2003, 22: 123-126.Journal ArticleShao J, Winterhoff R, Dornen A, Baars E, Chu J H
Ordering effects on optical transitions in GaxIn1-xP/(Al0.66Ga0.34)(y)In1-yP quantum wells studied by photoluminescence and reflectivity spectroscopy
Physical Review B, 2003, 68: 165327.Journal ArticleShao J, Dornen A, Baars E, Harle V, Scholz F, Guo S L, Chu J H
Forbidden transitions and the effective masses of electrons and holes in In1-xGaxAs/InP quantum wells with compressive strain
Journal of Applied Physics, 2003, 93: 951-956.Journal ArticleQiu Z J, Jiang C P, Gui Y S, Shu X Z, Guo S L, Chu J H, Cui L J, Zeng Y P, Zhu Z P, Wang B Q
Electron transport properties of MM-HEMT with varied channel indium contents
Acta Physica Sinica, 2003, 52: 2879-2882.Journal ArticleLu X, Chu J H, Shen W Z
Modification of the lattice thermal conductivity in semiconductor rectangular nanowires
Journal of Applied Physics, 2003, 93: 1219-1229.Journal ArticleLi Y W, Meng X J, Yu J, Wang G S, Sun J L, Chu J H, Zhang W F
Study on the preparation of LaNiO3 thin films using chemical solution decomposition method
Journal of Infrared and Millimeter Waves, 2003, 22: 269-272.Journal ArticleLi y, Zhang w, Meng x, Sun j, Wang g, Chu J H
The study of the Pb(Zr_(0.3),Ti_(0.7))O_3 ferroelectric thin films with the LaNiO_3 thin films as the bottom electrode
Journal of Henan University. Natural Science, 2003, 33: 23-26.Journal ArticleLai Z, Li Xin i, Yu J, Wang G, Guo S, Chu J H
Effects on post-annealing temperature on the structure and properties of Pb(Zr_(0.52)Ti_(0.48)O_3 ferroelectric thin films prepared by rf sputtering
Journal of Nanchang University, 2003, 27: 26-28,44.Journal ArticleHu Z G, Zhao Q, Huang Z M, Wang G S, Meng X J, Lin T, Chu J H
Investigations on the infrared spectrometric ellipsometry of PbZr0.52Ti0.48O3 thin films
Journal of Infrared and Millimeter Waves, 2003, 22: 59-62.Journal ArticleHu Z G, Wang S W, Huang Z M, Wang G S, Zhang Z H, Lu W, Chu J H
Infrared optical properties of Bi2Ti2O7 thin films by spectroscopic ellipsometry
Thin Solid Films, 2003, 440: 190-194.Journal ArticleHu Z G, Wang G S, Huang Z M, Meng X J, Zhao Q, Shi F W, Chu J H
Investigations on the transmission spectra of PbZr0.40Ti0.60O3 amorphous thin films
Journal of Infrared and Millimeter Waves, 2003, 22: 203-207.Journal ArticleHu Z G, Wang G S, Huang Z M, Meng X J, Shi F W, Chu J H
Investigations of the optical properties of Ba0.9Sr0.1TiO3 ferroelectric thin films by spectroscopic ellipsometry
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 2003, 42: 1400-1404.Journal ArticleHu Z G, Wang G S, Huang Z M, Meng X J, Shi F W, Chu J H
Investigations on optical properties of very thin Bi3.25La0.75Ti3O12 ferroelectric thin films [J]
Journal of Infrared and Millimeter Waves, 2003, 22: 256-260.Journal ArticleHu Z G, Wang G S, Huang Z M, Meng X J, Shi F W, Chu J H
Investigations of the optical properties of Ba0.9Sr0.1TiO3 ferroelectric thin films by spectroscopic ellipsometry (vol 42, pg 1400, 2003)
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 2003, 42: 5395-5395.Journal ArticleHu Z G, Wang G S, Huang Z M, Meng X J, Chu J H
Investigations on the infrared optical properties of BaTiO3 ferroelectric thin films by spectroscopic ellipsometry
Semiconductor Science and Technology, 2003, 18: 449-453.Journal ArticleHu Z G, Wang G S, Huang Z M, Chu J H
Structure-related infrared optical properties of BaTiO3 thin films grown on Pt/Ti/SiO2/Si substrates
Journal of Physics and Chemistry of Solids, 2003, 64: 2445-2450.Journal ArticleHu Z G, Wang G S, Huang Z M, Chu J H
Optical properties of Bi3.25La0.75Ti3O12 thin films using spectroscopic ellipsometry
Journal of Applied Physics, 2003, 93: 3811-3815.Journal ArticleHu Z G, Shi F W, Huang Z M, Wu Y N, Wang G S, Chu J H
Infrared optical characterization of PLT thin films for applications in uncooled infrared detectors
International Journal of Infrared and Millimeter Waves, 2003, 24: 1939-1954.Journal ArticleHu Z G, Shi F W, Huang Z M, Wang G S, Meng X J, Lin T, Chu J H
Investigations of concentration effects of La on the infrared optical properties of PLZT thin films
Acta Physica Sinica, 2003, 52: 1624-1629.Journal ArticleHu Z G, Meng X J, Huang Z M, Wang G S, Zhao Q, Chu J H
Thickness dependence of infrared optical properties of LaNiO3 thin films prepared on platinized silicon substrates
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 2003, 42: 7045-7049.Journal ArticleHu Z G, Ma J H, Huang Z M, Wu Y N, Wang G S, Chu J H
Dielectric functions of ferroelectric Bi3.25La0.75Ti3O12 thin films on Si(100) substrates
Applied Physics Letters, 2003, 83: 3686-3688.Journal ArticleHu Z G, Huang Z M, Lai Z Q, Wang G S, Chu J H
Optical properties of amorphous PbZrxTi1-xO3 (x=0.52) thin films prepared by RF magnetron sputtering
Thin Solid Films, 2003, 437: 223-229.
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2002
Journal ArticleZhao Q, Fan Z X, Tang Z S, Meng X J, Song J L, Wang G S, Chu J H
Highly (III)-oriented PbTiO3 films prepared by rf planar magnetron sputtering and their optical properties
Surface & Coatings Technology, 2002, 160: 173-176.Journal ArticleZhao Q, Chu J H, Fan Z
Study on Manufacturing Highly Oriented (111)PbTiO_3 Thin Film and its Optical Properties
Plezoelectrics and Acoustooptics, 2002, 24: 382-384.ConferenceYu J, Meng X J, Sun J L, Wang G S, Chu J H
Phase transformation and Raman spectra in BaTiO3 nanocrystals
proceedings of the Symposium on Perovskite Materials held at the 2002 MRS Spring Meeting, San francisco, ca, F Apr 01-05, 2002, 2002.Journal ArticleXing H Z, Su G, Gao S, Chu J H
Field-induced transition in the S=1 antiferromagnetic chain with single-ion anisotropy in a transverse magnetic field
Physical Review B, 2002, 66: 054419.Journal ArticleWang G S, Yu J, Wang Q, Zhao Q, Sun J L, Meng X J, Guo S L, Chu J H
Structure and optical properties of Ba0.9Sr0.1TiO3 ferroelectric thin films prepared by chemical solution routes
Physica Status Solidi a-Applied Research, 2002, 194: 56-63.Journal ArticleWang G S, Meng X J, Lai Z Q, Yu J, Sun J L, Cheng J G, Tang J, Guo S L, Chu J H
Structural and electrical properties of polycrystalline PbZr0.5Ti0.5O3 films deposited on La0.5Sr0.5CoO3 coated silicon by sol-gel process
Applied Physics a-Materials Science & Processing, 2002, 74: 707-710.Journal ArticleWang G S, Lai Z Q, Yu J, Meng X J, Sun J L, Guo S L, Chu J H, Jin C Y, Li G, Lu Q H
Structural and optical properties of Ba0.9Sr0.1TiO3 thin films prepared by chemical solution routes
Journal of Infrared and Millimeter Waves, 2002, 21: 37-40.ConferenceWang G S, Hu Z G, Huang H M, Wang X G, Lin T, Chen J, Meng X J, Chu J H, Ieee I
Infrared optical properties of lanthanum strontium cobalt thin films
proceedings of the 27th International Conference on Infrared and Millimeter Waves, San diego, ca, F Sep 22-26, 2002, 2002.Journal ArticleWang G, Yu J, Lai Z, Meng X, Sun J, Guo S, Chu J H, Li G, Lu Q
PZT50/50 ferroelectric thin films derived by modified sol-gel process
Journal of Functional Materials, 2002, 33: 63-64.Journal ArticleWan Y-b, Wu Y-r, Chen J, Chu J H, Guo S-l, Li J
Growth and defects of potassium lithium niobate crystals
Journal of Synthetic Crystals, 2002, 31: 5-9.Journal ArticleTang J, Cheng J, Chu J H, Yu Q
An Cooled (Ba,Sr)TiO_3 Thin Film Infrared Sensor Array Suitable for Thermal Imaging Applications
Infrared Technology, 2002, 24: 18-21,33.Journal ArticleSun J L, Chen J, Meng X J, Yu J, Bo L X, Guo S L, Chu J H
Evolution of Rayleigh constant in fatigued lead zirconate titanate capacitors
Applied Physics Letters, 2002, 80: 3584-3586.Journal ArticleShao J, Dornen A, Baars E, Wang X G, Chu J H
Photoluminescence and absorption identification of Ti3+ in zinc telluride
Semiconductor Science and Technology, 2002, 17: 1213-1217.Journal ArticleMeng X J, Sun J L, Wang X G, Lin T, Ma J H, Guo S L, Chu J H
Temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors
Applied Physics Letters, 2002, 81: 4035-4037.Journal ArticleLu X, Shen W Z, Chu J H
Size effect on the thermal conductivity of nanowires
Journal of Applied Physics, 2002, 91: 1542-1552.Journal ArticleLu X, Chu J H
Phonon heat transport in silicon nanowires
European Physical Journal B, 2002, 26: 375-378.ConferenceChu J H, Zhiming H
Infrared spectroscopic ellipsometry study on ferroelectric thin films and narrow gap semiconductors
Proceedings of the SPIE - The International Society for Optical Engineering, 2002, 4795: 44-51.Journal ArticleHuang Z M, Yu R, Jiang C P, Lin T, Zhang Z H, Chu J H
Influence of delta doping position on subband properties in In0.2Ga0.8As/GaAs heterostructures
Physical Review B, 2002, 65: 205312.Journal ArticleHuang Z M, Meng X J, Zhang Z H, Chu J H
Infrared optical properties of PbTiO3 ferroelectric thin films
Journal of Physics D-Applied Physics, 2002, 35: 246-248.Journal ArticleHu Z G, Wang G S, Huang Z M, Meng X J, Chu J H
Infrared optical properties of Bi3.25La0.75Ti3O12 ferroelectric thin films using spectroscopic ellipsometry
Journal of Physics D-Applied Physics, 2002, 35: 3221-3224.Journal ArticleHu Z G, Wang G S, Huang Z M, Chu J H
Optical properties of PbTiO3 thin films prepared by a modified sol-gel processing
Journal of Infrared and Millimeter Waves, 2002, 21: 175-179.Journal ArticleDing G-h, Shen X-y, Chu J H, Huang Z-m, Yao W, Liu H, Wang S-z, Fei L
Research on infrared radiation spectrum of moxibustion and acupoints in human body in traditional Chinese medicine
Chinese Journal of Biomedical Engineering, 2002, 21: 356-360.Journal ArticleDing G, Shen X, Chu J H, Huang Z, Yao W
Observation on the Characters of the Infrared radiation Spectrum of Acupoints and Four Types of Moxibustion in the Human Body
Acupuncture Research, 2002, 27: 269-273.Journal ArticleDai N, Chang Y, Wang X G, Li B, Chu J H
Photo-electronic phenomena in narrow gap Hg1-xCdxTe
Current Applied Physics, 2002, 2: 365-371.Journal ArticleCui L J, Zeng Y P, Wang B Q, Zhu Z P, Lin L Y, Jiang C P, Guo S L, Chu J H
Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements
Applied Physics Letters, 2002, 80: 3132-3134.ConferenceChu J H, Huang Z M
Infrared spectroscopic ellipsometry on ferroelectric thin films and narrow gap semiconductors
proceedings of the Conference on Materials for Infrared Detectors II, Seattle, wa FJul 08-09, 2002, 2002.ConferenceChu J H, Chang Y, Huang Z M, Gui Y S, Wang X G, Lu X, He L, Tang D Y
Optical and electronic characterization on HgCdTe materials
proceedings of the Materials for Infrared Detectors Ii, F, 2002.
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2001
Journal ArticleZheng Z W, Shen B, Jiang C P, Zhang R, Shi Y, Zheng Y D, Zheng G Z, Guo S L, Chu J H
Origin of the novel magnetoresistance oscillation of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
Chinese Physics Letters, 2001, 18: 1641-1643.Journal ArticleYu J, Sun J L, Meng X J, Huang Z M, Chu J H, Tang D Y, Jin C Y, Li G, Li W Y, Liang Q
Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt-Ti-SiO2-Si wafer
Journal of Applied Physics, 2001, 90: 2699-2702.Journal ArticleYu J, Huang Z M, Meng X J, Sun J L, Chu J H, Tang D Y
Infrared optical properties of LaNiO3-platinized silicon and PbZr chi Ti1-chi O3-LaNiO3-platinized silicon heterostructures
Applied Physics Letters, 2001, 78: 793-795.Journal ArticleWang G S, Meng X J, Zheng W M, Wang X G, Yu J, Chu J H
Study of properties of urea and L-alpha-alanine didoped triglycine sulfate(UrLATGS) crystals
International Journal of Infrared and Millimeter Waves, 2001, 22: 329-334.Journal ArticleWang G S, Meng X J, Yu J, Sun J L, Lai Z Q, Guo S L, Chu J H
Effect of hydrolysis on properties of PbZr0.50Ti0.50O3 ferroelectric thin films derived from a modified sol-gel process
Journal of Crystal Growth, 2001, 233: 269-274.Journal ArticleWang G S, Meng X J, Sun J L, Lai Z Q, Yu J, Guo S L, Cheng J G, Tang J, Chu J H
PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 heterostructures prepared by chemical solution routes on silicon with no fatigue polarization
Applied Physics Letters, 2001, 79: 3476-3478.Journal ArticleWang G S, Lai Z Q, Yu J, Guo S L, Chu J H, Li G, Lu Q H
Preparation and properties of lanthanum strontium cobalt films on Si(100) by metallorganic chemical liquid deposition
Journal of Crystal Growth, 2001, 233: 512-516.ConferenceWang G S, Lai Z Q, Meng X J, Sun J L, Yu J, Guo S L, Chu J H
PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/ thin films prepared on La/sub 0.5/Sr/sub 0.5/CoO/sub 3//LaNiO/sub 3/ heterostructures for integrated ferroelectric devices
proceedings of the 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), F 22-25 Oct. 2001, 2001.Journal ArticleWang G S, Cheng J G, Meng X J, Yu J, Lai Z Q, Tang J, Guo S L, Chu J H, Li G, Lu Q H
Properties of highly (100) oriented Ba0.9Sr0.1TiO3/LaNiO3 heterostructures prepared by chemical solution routes
Applied Physics Letters, 2001, 78: 4172-4174.Journal ArticleWan Y B, Li J, Chu J H, Bo L X, Yu T Y, Yu B K
The study of frequency-doubling properties of ferroelectric potassium lithium niobate
Journal of Infrared and Millimeter Waves, 2001, 20: 147-150.Journal ArticleWan Y B, Li B, Chu J H
Second harmonic generation of ferroelectric potassium lithium niobate crystals
Integrated Ferroelectrics, 2001, 35: 1827-1833.Journal ArticleWan Y B, Chu J H, Yu T Y, Yu B K, Pan S K
Growth and characterisation of ferroelectric potassium lithium niobate crystals
Materials Science and Technology, 2001, 17: 1166-1168.Journal ArticleWan Y B, Chu J H, Guo S L, Bo L X, Yu T Y, Yu B K
A ferroelectric frequency-doubling material-potassium lithium niobate
International Journal of Infrared and Millimeter Waves, 2001, 22: 197-205.ConferenceWan Y, Guo Y, Yuan X, Chen J, Chu J H
Spectra properties of ferroelectric potassium lithium niobate crystal
proceedings of the 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), F 22-25 Oct. 2001, 2001.Journal ArticleMeng X J, Sun J L, Yu J, Ye H J, Guo S L, Chu J H
Preparation of highly (100)-oriented metallic LaNiO3 films on Si substrates by a modified metalorganic decomposition technique
Applied Surface Science, 2001, 171: 68-70.Journal ArticleMeng X J, Sun J L, Yu J, Wang G S, Guo S L, Chu J H
Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode
Applied Physics a-Materials Science & Processing, 2001, 73: 323-325.Journal ArticleMeng X J, Sun J L, Yu J, Bo L X, Jiang C P, Sun Q, Guo S L, Chu J H
Changes in the interface capacitance for fatigued lead-zirconate-titanate capacitors
Applied Physics Letters, 2001, 78: 2548-2550.Journal ArticleMao W Y, Sun Q, Chu J H, Zhao J, Wang L M
Electrically active defects in HgCdTe and opto-electronic properties of focal plane array by laser beam induced current
Journal of Infrared and Millimeter Waves, 2001, 20: 259-262.Journal ArticleMa Z X, Meng X J, Chu J H
Memory properties of metal-ferroelectric-semiconductor structure
Ferroelectrics, 2001, 253: 795-801.Journal ArticleLu X, Gu J H, Chu J H
Thermal conductivity of metallic wires
Chinese Physics, 2001, 10: 223-228.Journal ArticleLu X, Chu J H
Size effect on thermal conductivity of square wires
Physica Status Solidi B-Basic Research, 2001, 226: 285-292.Journal ArticleLu X, Chu J H
Roughness effect on thermal conductivity of thin films
Physica Status Solidi B-Basic Research, 2001, 225: 35-41.Journal ArticleLiang B L, Jiang C P, Xia G Q, Fan S P, Chu J H
Investigation of long-wavelength optical-phonons in GaxIn1-xAsySb1-y quaternary mixed crystal by Raman scattering spectroscopies and FIR reflection spectra
Journal of Infrared and Millimeter Waves, 2001, 20: 315-317.ConferenceJiang C P, Li X J, Guo S L, Sun Q, Huang Z M, Chu J H
Transport properties of InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate
proceedings of the 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), F 22-25 Oct. 2001, 2001.Journal ArticleJiang C P, Huang Z M, Li Z F, Yu J, Guo S L, Lu W, Chu J H, Cui L J, Zeng Y P, Zhu Z P, Wang B Q
Longitudinal optic phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates
Applied Physics Letters, 2001, 79: 1375-1377.Journal ArticleJiang C P, Huang Z M, Guo S L, Chu J H, Cui L J, Zeng Y P, Zhu Z P, Wang B Q
Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates
Applied Physics Letters, 2001, 79: 1909-1911.Journal ArticleJiang C P, Guo S L, Huang Z M, Yu J, Gui Y S, Zheng G Z, Chu J H, Zheng Z W, Shen B, Zheng Y D
Subband electron properties of modulation-doped AlxGa1-xN/GaN heterostructures with different barrier thicknesses
Applied Physics Letters, 2001, 79: 374-376.Journal ArticleHuang Z M, Zang Z H, Jiang C P, Chu J H
Refractive index enhancement effect in Hg1-xCdxTe near the fundamental gap
Journal of Infrared and Millimeter Waves, 2001, 20: 161-164.Journal ArticleHuang Z M, Jiang C P, Zhang Z H, Lin T, Chu J H, Yu R
Subband characteristics of Si delta-doped pseudomorphic In0.2Ga0.8As/GaAs heterostructures
Journal of Applied Physics, 2001, 90: 3115-3117.Journal ArticleHuang Z M, Chu J H
Refractive index dispersion of Hg1-xCdxTe by infrared spectroscopic ellipsometry
Infrared Physics & Technology, 2001, 42: 77-80.Journal ArticleDing G H, Yao W, Chu J H, Shen X Y, Huang Z M, Cheng H S, Liu H, Wang S Z, Yang J, Wei H, Fei L
Spectral characteristic of infrared radiations of some acupoint and non-acupoint areas in human arm surface
Chinese Science Bulletin, 2001, 46: 678-682.Journal ArticleCheng J G, Tang J, Meng X J, Guo S L, Chu J H, Wang M, Wang H, Wang Z
Fabrication and characterization of pyroelectric Ba0.8Sr0.2TiO3 thin films by a sol-gel process
Journal of the American Ceramic Society, 2001, 84: 1421-1424.Journal ArticleCheng J G, Tang J, Guo S L, Chu J H
Sol-gel derived pyroelectric barium strontium titanate thin films for infrared detector applications
Ferroelectrics, 2001, 252: 525-532Journal ArticleCheng J G, Tang J, Guo S L, Chu J H
Low-temperature fabrication of pyroelectric Ba0.8Sr0.2TiO3 thin films by a sol-gel process
Journal of Materials Research, 2001, 16: 778-783.Journal ArticleChang Y, Tang W, Cheng C, Wang X, Chu J H, Tang D
Realization and improvement of double modulation methods for Fourier transform luminescence measurements in middle and far infrared band
Acta Optica Sinica, 2001, 21: 1489-1492.Journal ArticleCao X, Zeng Y P, Kong M Y, Pan L A, Wang B Q, Zhu Z P, Wang X G, Chang Y, Chu J H
Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer
Journal of Crystal Growth, 2001, 231: 520-524.
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2000-1991
Journal ArticleZheng W M, Wang H, Wang S Y, Chu J H, Chen L Y
The magneto-optical Kerr effect enhancement in Co2Ag98 granular films
Journal of Infrared and Millimeter Waves, 2000, 19: 53-56.ConferenceZheng W M, Wang H, Wang S Y, Chen L Y, Chu J H
The magneto-optical Kerr properties of Co-Ag annealed granular films
proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.Journal ArticleZheng W M, Chen L Y, Chu J H, Deng Z B
Magneto-optical Kerr effect in CoxAg1-x nanostructured granular films
Science in China Series a-Mathematics Physics Astronomy, 2000, 43: 753-759.Journal ArticleYu J, Sun J L, Chu J H, Tang D Y
Light-emission properties in nanocrystalline BaTiO3
Applied Physics Letters, 2000, 77: 2807-2809.ConferenceYu J, Ling Y N, Sun J L, Meng X J, Chu J H, Tang D Y
Theoretical study of monolithic pyroelectric sensor arrays by thermal diffusion equation
proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.Journal ArticleWang X G, Chang Y, Gui Y S, Chu J H, Cao X, Zeng Y P, Kong M Y
Photoluminescence studies on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells
Journal of Infrared and Millimeter Waves, 2000, 19: 333-337.ConferenceWang X G, Chang Y, Cao X, Gui Y S, Chu J H
Optical investigations on pseudomorphic: delta-doped AlGaAs/InGaAs/GaAs quantum wells
proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.Journal ArticleWan Y-b, Chu J H, Huang F-p, Yu T-y, Yu B-k, Pan S-k
Second harmonic generation of nonlinear optic crystal potassium lithium niobate
Chinese Journal of Luminescence, 2000, 21: 129-133.ConferenceWan Y B, Chu J H, Guo S L, Bo L X
A ferroelectric frequency-doubling material-potassium lithium niobate
proceedings of the 25th International Conference on Infrared and Millimeter Waves, Beijing, peoples r china, F Sep 12-15, 2000, 2000.ConferenceSun J L, Meng X J, Bo L X, Ma Z X, Huang Z M, Guo S L, Chu J H
The effect of PbO-coated layer on the microstructure and electrical properties of sol-gel derived PZT thin films
proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.ConferenceMeng X J, Sun J L, Wang G S, Yu J, Guo S L, Chu J H
Low temperature preparation of highly (001)-oriented PZT thin films on Pt/Ti/SiO2/Si using LaNiO3 as a buffer layer
proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.Journal ArticleMeng X J, Ma Z X, Sun J L, Bo L X, Ye H J, Guo S L, Chu J H
Highly oriented PbZr0.3Ti0.7O3 thin film on LaNiO3-coated Si substrate derived from a chemical solution technique
Thin Solid Films, 2000, 372: 271-275.Journal ArticleMeng X J, Cheng J G, Ye H J, Chu J H
Characterization of the crystallization behaviors in the PbTiO3 thin films on Si substrates by an infrared spectroscopy technique
Infrared Physics & Technology, 2000, 41: 47-50.Journal ArticleMeng X J, Cheng J G, Yang P X, Ye H J, Chu J H
IR spectroscopy of PbTiO3 thin films obtained from different annealing methods
Acta Physica Sinica, 2000, 49: 371-374.Journal ArticleMeng X J, Cheng J G, Sun J L, Ye H J, Guo S L, Chu J H
Growth of (100)-oriented LaNiO3 thin films directly on Si substrates by a simple metalorganic decomposition technique for the highly oriented PZT thin films
Journal of Crystal Growth, 2000, 220: 100-104.Journal ArticleMeng X J, Cheng J G, Sun J L, Tan J, Ye H J, Chu J H
Dependence of texture development on thickness of single-annealed-layer in sol-gel derived PZT thin films
Thin Solid Films, 2000, 368: 22-25.Journal ArticleMeng X J, Cheng J G, Li B, Tang J, Ye H J, Guo S L, Chu J H
Characterization of phase transformations in PZT thin films prepared by a modified sol-gel technique
Acta Physica Sinica, 2000, 49: 811-815.Journal ArticleMeng X J, Cheng J G, Li B, Tang J, Ye H J, Chu J H
PZT thin films derived from a modified sol-gel technique based on acetic acid/water system using a new zirconium source
Journal of Materials Science Letters, 2000, 19: 1967-1969.Journal ArticleMeng X J, Cheng J G, Li B, Guo S L, Ye H J, Chu J H
Low-temperature preparation of highly (111) oriented PZT thin films by a modified sol-gel technique
Journal of Crystal Growth, 2000, 208: 541-545.Journal ArticleMa Z X, Liao X B, Kong G L, Chu J H
Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix (Retracted article. See vol. 120, pg. 299, 2014)
Materials Letters, 2000, 42: 367-370.Journal ArticleMa Z X, Liao X B, Kong G L, Chu J H
Raman scattering of nanocrystalline silicon embedded in SiO2
Science in China Series a-Mathematics Physics Astronomy, 2000, 43: 414-420.Journal ArticleMa Z X, Liao X B, Kong G L, Chu J H
Microstructure of SiOx : H films prepared by plasma enhanced chemical vapor deposition
Chinese Physics, 2000, 9: 309-312.ConferenceLiu X T, Liu Z H, Chang Y, Chu J H
The fabrication of multi-element arrays based on high T-c superconducting microbolometers
proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.Journal ArticleLiang B L, Xia G Q, Huang Z M, Fan S P, Chu J H
Determining the band gap of GaxIn1-xAsySb1-y quaternary alloy by infrared ellipsometric spectroscopy
Journal of Infrared and Millimeter Waves, 2000, 19: 188-190.Journal ArticleLi B, Koch F, Meng X J, Cheng J G, Chu J H
Investigation of interface and bulk fatigue scenarios in sol-gel derived Pb(Zr0.5Ti0.5)O-3 films by asymmetric field driving
Applied Physics Letters, 2000, 77: 898-900.Journal ArticleJiang C P, Gui Y S, Zheng G Z, Ma Z X, Wang S L, He L, Chu J H
Investigation of the light hole in p-type Hg1-xCdxTe
Acta Physica Sinica, 2000, 49: 959-964.Journal ArticleJiang C P, Gui Y S, Zheng G Z, Ma Z X, Li B, Guo S L, Chu J H
Study on transport properties of two-dimensional electron gases in n-Hg0.80Mg0.20Te interface accumulation layer
Acta Physica Sinica, 2000, 49: 1804-1808.Journal ArticleHuang Z M, Zhang Z H, Jiang C P, Yu J A, Sun J L, Chu J H
Infrared optical properties of Ba0.8Sr0.2TiO3 ferroelectric thin films
Applied Physics Letters, 2000, 77: 3651-3653.Journal ArticleHuang Z M, Meng X J, Yang P X, Zhang Z H, Chu J H
Optical properties of PbZrxTi1-xO3 on platinized silicon by infrared spectroscopic ellipsometry
Applied Physics Letters, 2000, 76: 3980-3982.ConferenceHuang Z M, Jiang C P, Yang P X, Zhang Z H, Chu J H
Infrared optical properties of PbZrxTi1-xO3 thin films
proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.Journal ArticleHuang Z, Chu J H
Optimizing precision of fixed-polarizer, rotating-polarizer, sample, and fixed-analyzer spectroscopic ellipsometry
Appl Opt, 2000, 39: 6390-6395.ConferenceHe L, Wu Y, Wang S L, Yu M F, Chen L, Qiao Y M, Yang J R, Fang W Z, Li Y J, Zhang Q Y, Ding R J, Chu J H
MBE growth of HgCdTe and device applications
proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.Journal ArticleGui Y S, Hu C M, Chen Z H, Zheng G Z, Guo S L, Chu J H, Chen J X, Li A Z
Spin splitting in pseudomorphic InxGa1-xAs/InyAl1-yAs graded heterostructures
Physical Review B, 2000, 61: 7237-7240.Journal ArticleGui Y S, Guo S L, Zheng G Z, Chu J H, Fang X H, Qiu K, Wang X W
Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor
Applied Physics Letters, 2000, 76: 1309-1311.ConferenceGenShui W, Xiangjian M, Weiming Z, Xiaoguang W, Jian Y, Chu J H
Study on properties of urea and L-/spl alpha/-alanine didoped triglycine sulfate (UrLATGS) crystals
proceedings of the 25th International Conference on Infrared and Millimeter Waves (Cat. No.00EX442), F 12-15 Sept. 2000, 2000.ConferenceFu R L, Chu J H, Zheng W M, Guo G Y, Sun X
Photo-induced polarization inversion of excitons in conjugated polymer films
proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.Journal ArticleCheng J G, Tang J, Zhang A J, Meng X J, Chu J H
Sol-gel-derived pyroelectric barium strontium titanate thin films for infrared detector applications
Applied Physics a-Materials Science & Processing, 2000, 71: 667-670.ConferenceCheng J G, Tang J, Guo S L, Chu J H
Effects of annealing temperature and time on the structure and ferroelectricity of sol-gel derived Ba0.8Sr0.2TiO3 thin films from high dilute precursor solutions
proceedings of the Fourth International Conference on Thin Film Physics and Applications, F, 2000.Journal ArticleCheng J G, Tang J, Chu J H, Zhang A J
Pyroelectric properties in sol-gel derived barium strontium titanate thin films using a highly diluted precursor solution
Applied Physics Letters, 2000, 77: 1035-1037.Journal ArticleCheng J G, Meng X J, Tang J, Guo S L, Chu J H, Wang M, Wang H, Wang Z
Effects of individual layer thickness on the structure and electrical properties of sol-gel-derived Ba0.8Sr0.2TiO3 thin films
Journal of the American Ceramic Society, 2000, 83: 2616-2618.Journal ArticleCheng J G, Meng X J, Tang J, Guo S L, Chu J H
Structure and ferroelectricity of Ba0.8Sr0.2TiO3 thin films prepared by a modified sol-gel processing
Acta Physica Sinica, 2000, 49: 1006-1009.Journal ArticleCheng J G, Meng X J, Tang J, Guo S L, Chu J H
Fabrication and electrical properties of sol-gel-derived Ba0.8Sr0.2TiO3 ferroelectric films from a 0.05-M spin-on solution
Applied Physics a-Materials Science & Processing, 2000, 70: 411-414.Journal ArticleChang Y, Wang X G, Tang W G, Chu J H
Infrared photoluminescence from narrow gap Hg0.79CD0.21Te
Journal of Infrared and Millimeter Waves, 2000, 19: 174-176.ConferenceChang Y, Chu J H, Ji R B, Wang X G, Huang G S, Li J F, He L, Tang D Y
Infrared photoluminescence characterization of HgCdTe film
proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, China, F May 08-11, 2000, 2000.Journal ArticleZhu J Q, Zhang X P, Li B, Chu J H
The effects of Te precipitation on IR transmittance and crystalline quality of as-grown CdZnTe crystals
Infrared Physics & Technology, 1999, 40: 411-415.Journal ArticleZheng W M, Chen L Y, Chu J H
The magneto-optical Kerr effect enhancement in CoxAg1-x granular films
Physica Status Solidi B-Basic Research, 1999, 214: 463-469.Journal ArticleZhang X H, Hu Y S, Wu J, Cheng Z Q, Xia G Q, Xu Y S, Chen Z H, Gui Y S, Chu J H
Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor
Acta Physica Sinica, 1999, 48: 556-560.Journal ArticleYang P X, Huang Z M, Chu J H
Energy gap and infrared adsorption of layer-structure perovskite ferroelectric thin films
Journal of Infrared and Millimeter Waves, 1999, 18: 248-252.ConferenceMeng X J, Huang Z M, Ye H J, Cheng J G, Yang P X, Chu J H
Optical properties of sol-gel derived PbTiO3 and PbZr1-xTixO3 ferroelectric thin films
proceedings of the Ferroelectric Thin Films Vii, Boston, ma, F Nov 30-dec 03, 1998, 1999 [C].Journal ArticleMeng X J, Chneg J G, Ye H J, Yang P X, Guo S L, Chu J H
Infrared reflection spectra and phonon modes of PbTiO3 polycrystalline thin film
Journal of Infrared and Millimeter Waves, 1999, 18: 392-396.Journal ArticleMa Z X, Liao X B, Kong G L, Chu J H
Optical properties of nanocrystalline silicon embedded in SiO2
Science in China Series a-Mathematics Physics Astronomy, 1999, 42: 995-1002.Journal ArticleMa Z X, Liao X B, Kong G L, Chu J H
Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix
Applied Physics Letters, 1999, 75: 1857-1859.Journal ArticleMa Z X, Liao X B, Kong G L, Chu J H
Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix
Applied Physics Letters, 1999, 75: 1857-1859.Journal ArticleLiu X T, Shi B A, Liu X H, Chu J H, Yang D J
The fabrication of a 1 X 8 linear array high T-c superconductive infrared detector
Infrared Physics & Technology, 1999, 40: 83-85.Journal ArticleJiang H, Xu X H, Sun X, Fu R L, Chu J H
Transformation of photoexcitation in polymers under an electric field
Acta Physica Sinica, 1999, 48: 2327-2333.Journal ArticleHuang Z M, Yang P X, Chang Y, Chu J H
Infrared optical properties of SrBi2Ta2O9 ferroelectric thin films
Journal of Applied Physics, 1999, 86: 1771-1773.Journal ArticleHuang Z M, Ji H M, Chen M H, Shi G L, Chen S W, Chen L Y, Chu J H
Study on the refractive index of GaAs bulk material by infrared spectroscopic ellipsometry
Journal of Infrared and Millimeter Waves, 1999, 18: 23-25.Journal ArticleHe L, Wang S L, Yang J R, Yu M F, Wu Y, Chen X Q, Fang W Z, Qiao Y M, Gui Y S, Chu J H
Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe
Journal of Crystal Growth, 1999, 201: 524-529.Journal ArticleGui Y S, Zheng G Z, Guo S L, Chu J H, Tang D Y, Chen J X, Li A Z
Spin splitting in pseudomorphic InGaAs/InAlAs graded heterostructures as B -> 0
Acta Physica Sinica, 1999, 48: 121-126.Journal ArticleGui Y S, Zheng G Z, Guo S L, Cai Y, Chu J H, Tang D Y
The electrical parameter analysis for Hg1-xCdxTe photoconductors
Journal of Infrared and Millimeter Waves, 1999, 18: 317-321.Journal ArticleFu R L, Chu J H, Jiang H, Sun X
Field-induced luminescence quenching in electroluminescent conjugated polymers
Chinese Physics Letters, 1999, 16: 764-766.Journal ArticleFu R L, Chu J H, Fu R T, Li L, Sun X
Effects of electric field on the electronic structures in electroluminescent polymers
Journal of Materials Science & Technology, 1999, 15: 354-356.Journal ArticleCheng J G, Meng X J, Tang J, Guo S L, Chu J H
Pyroelectric Ba0.8Sr0.2TiO3 thin films derived from a 0.05 M solution precursor by sol-gel processing
Applied Physics Letters, 1999, 75: 3402-3404.Journal ArticleCheng J G, Meng X J, Li B, Tang J, Guo S L, Chu J H, Wang M, Wang H, Wang Z
Ferroelectricity in sol-gel derived Ba0.8Sr0.2TiO3 thin films using a highly diluted precursor solution
Applied Physics Letters, 1999, 75: 2132-2134.ConferenceZhang X C, Zheng G Z, Guo S L, Gui Y S, Chu J H
Interface electrical characteristics of passivation films on HgCdTe
proceedings of the Third International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F Apr 15-17, 1997, 1998.Journal ArticleYang P X, Deng H M, Chu J H
Highfield effects of layered perovskite ferroelectric thin films
Science in China Series E-Technological Sciences, 1998, 41: 502-510.Journal ArticleLiu X T, Lu H X, Liu X H, Li B, Chu J H
Development of high T-c superconducting IR detectors with sub-micrometer structure
Journal of Infrared and Millimeter Waves, 1998, 17: 381-385.Journal ArticleLiu K, Chu J H, Johnston C, Roth S
Measurement of electrical activation energy in boron-doped diamond using the flatband capacitance method
Journal of Applied Physics, 1998, 83: 4202-4205.ConferenceLi H, Yang J R, Wang S L, Yu M F, Wu Y, Qiao Y M, Chen X Q, Fang W H, Zhang Q Y, Gui Y S, Chu J H
MBE HgCdTe for infrared focal plane arrays
proceedings of the Detectors, Focal Plane Arrays, and Imaging Devices II, Beijing, peoples r china, F Sep 18-19, 1998, 1998.Journal ArticleLi B O, Wu Y, Gui Y S, Ye H J, Chang Y, He L, Chu J H
Spectra analysis of annealed Hg1-xCdxTe molecular beam epitaxial films (vol 73, pg 1376, 1998)
Applied Physics Letters, 1998, 73: 2221-2221.Journal ArticleLi B, Zhang X P, Zhu J Q, Chu J H
Crystallinity improvement of Hg1-xCdxTe films grown by a liquid-phase epitaxial technique
Journal of Crystal Growth, 1998, 184: 1242-1246.Journal ArticleLi B, Wu Y, Gui Y S, Ye H J, Chang Y, He L, Chu J H
Spectra analysis of annealed Hg1-xCdxTe molecular beam epitaxial films
Applied Physics Letters, 1998, 73: 1376-1378.Journal ArticleLi B, Gui Y S, Zhu J Q, Chu J H
Structure investigation on Hg1-xCdxTe liquid phase epitaxial films grown by the meltetch technique
Journal of Electronic Materials, 1998, 27: 51-54.ConferenceLi B, Gui Y S, Zhu J Q, Chu J H
Quality Hg1-xCdxTe films grown by the modified meltetch liquid phase epitaxy method
proceedings of the Third International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F Apr 15-17, 1997, 1998.Journal ArticleLi B, Gui Y S, Ye H J, Chu J H, Krishnamurthy S
Logarithmic approximation for the energy band in nonparabolic semiconductors
Journal of Applied Physics, 1998, 83: 7668-7671.Journal ArticleLi B, Gui Y S, Ye H J, Chu J H
Characterization of material inhomogeneities in Hg1-xCdxTe epilayer by infrared absorption spectra
Physics Letters A, 1998, 243: 106-110.Journal ArticleLi B, Gui Y S, Chen Z H, Ye H J, Chu J H, Wang S L, Ji R B, He L
Study of impurity states in p-type Hg1-xCdxTe using far-infrared spectroscopy
Applied Physics Letters, 1998, 73: 1538-1540.Journal ArticleHuang Z M, Jin S R, Chen S W, Chen M H, Shi G L, Chen L Y, Chu J H
Development of infrared spectroscopic ellipsometer by synchronous rotation of the polarizer and analyzer
Journal of Infrared and Millimeter Waves, 1998, 17: 321-326.ConferenceGui Y S, Zheng G Z, Zhang X C, Guo S L, Chu J H, Cai Y
The relationship between resistivity and temperature for Hg1-xCdxTe photoconductive detectors
proceedings of the Third International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F Apr 15-17, 1997, 1998.Journal ArticleGui Y S, Zheng G Z, Guo S L, Chu J H
Mobility spectrum analysis of multi-carrier system in HgCdTe
Journal of Infrared and Millimeter Waves, 1998, 17: 327-332.Journal ArticleGui Y S, Zheng G Z, Cai Y, Chu J H.
Quantitative mobility spectrum analysis of n-HgCdTe accumulated layers
Journal of Infrared and Millimeter Waves, 1998, 17: 182-186.Journal ArticleGui Y S, Li B A, Zheng G Z, Chang Y, Wang S L, He L, Chu J H
Evaluation of densities and mobilities for heavy and light holes in p-type Hg1-xCdx molecular beam epitaxy films from magnetic-field-dependent Hall data
Journal of Applied Physics, 1998, 84: 4327-4331.Journal ArticleGui Y S, Li B, Zheng G Z, Guo S L, Chu J H, Oehling S, Becker C R, Landwehr G
Transport properties of Hg0.80Mg0.20Te grown by molecular beam epitaxy
Journal of Applied Physics, 1998, 84: 6170-6173.Journal ArticleFu L W, Liu K, Zhang B, Chu J H, Wang H, Wang M
Capacitance-voltage characteristics of Bi4Ti3O12/p-Si interface
Applied Physics Letters, 1998, 72: 1784-1786.Journal ArticleChu J H, Gui Y S, Li B O, Tang D Y
Determination of cut-off wavelength and composition distribution in Hg1-xCdxTe
Journal of Electronic Materials, 1998, 27: 718-721.Journal ArticleCheng J G, Meng X J, Yang P X, Chu J H
Preparation and characterization of Pt/MgO/Si multilayer thin films
Journal of Crystal Growth, 1998, 194: 89-93.Journal ArticleZhu J Q, Chu J H, Zhang X P, Cheng J J
Study of zinc inclusions/precipitates in CdZnTe crystals
Journal of Crystal Growth, 1997, 171: 357-360.Journal ArticleZhu J Q, Chu J H, Li B, Chen X Q, Cao J Y, Cheng J J
Crystalline perfection of Hg1-xCdxTe epilayers by the vertical dipping liquid-phase epitaxy
Journal of Crystal Growth, 1997, 177: 61-66.Journal ArticleLiu K, Zhang B, Wan M F, Chu J H, Johnston C, Roth S
Measurement of electron affinity in boron-doped diamond from capacitance spectroscopy
Applied Physics Letters, 1997, 70: 2891-2893.Journal ArticleLiu K, Johnston C, Chu J H, Roth S, Zhang B, Wan M F
Measurement of doping concentration in boron-doped diamond film from capacitance spectroscopy
Journal of Applied Physics, 1997, 82: 286-290.Journal ArticleLiu K, Chu J H, Zheng G Z, Guo S L, Tang D Y
Magneto-transport properties of semiconductors from flatband magnetocapacitance spectroscopy
Journal of Applied Physics, 1997, 81: 1250-1254.Journal ArticleLiu K, Chu J H, Wu L J, Cai Y, Guo S L, Ou H J, Zheng G Z, Tang D Y
Magnetic-field-inducer carrier freeze-out in narrow-gap semiconductors analysed by capacitance spectroscopy
Semiconductor Science and Technology, 1997, 12: 406-408.Journal ArticleLi B, Zhu J Q, Zhang X P, Chu J H
Effect of annealing on near-stoichiometric and non-stoichiometric CdZnTe wafers
Journal of Crystal Growth, 1997, 181: 204-209.Journal ArticleLi B, Chu J H, Tang D Y
Segregation coefficients in Te-rich Hg-Cd-Te systems
Journal of Crystal Growth, 1997, 171: 311-313.Journal ArticleGui Y S, Zheng G Z, Chu J H, Guo S L, Zhang X C, Tang D Y, Cai Y
Electrical characterization of subbands in the HgCdTe surface layer
Journal of Applied Physics, 1997, 82: 5000-5004.ConferenceChu J H, Liu K, Chang Y, Liu P L, Li B, Guo S L, Chen M H, Tang D Y
Recent progress in the study of characterization and properties of HgCdTe at the National Laboratory for Infrared Physics in China
proceedings of the Material Science and Material Properties for Infrared Optoelectronics, Uzhgorod, Ukraine, F 26 August 1997, 1997. SPIE.Journal ArticleZhu J Q, Chu J H, Li B, Chen X Q, Cao J Y, Cheng J J
Morphology improvement of the Hg1-xCdxTe liquid-phase epilayers by meltback step
Physica Status Solidi a-Applied Research, 1996, 157: 83-91.Journal ArticleLiu K, Chu J H, Wu L J, Ou H J, Tang D Y
Potential model for the subband structures in the inversion layer of narrow-gap semiconductor heterostructures
Journal of Applied Physics, 1996, 79: 3608-3610.Journal ArticleLi B, Chu J H, Zhu J Q, Chen X Q, Cao J Y, Tang D Y
Morphology investigation of Hg1-xCdxTe liquid phase epitaxial films
Journal of Crystal Growth, 1996, 163: 348-352.Journal ArticleLi B, Chu J H, Zhu J Q, Chen X Q, Cao J Y, Tang D Y
Growth of Hg1-xCdxTe liquid phase epitaxial films on vicinal planes
Journal of Crystal Growth, 1996, 169: 480-484.Journal ArticleLi B, Chu J H, Ye H J, Guo S P, Jiang W, Tang D Y
Direct observation of vibrational modes in Hg1-xCdxTe
Applied Physics Letters, 1996, 68: 3272-3274.Journal ArticleLi B, Chu J H, Chen Z H, Chang Y, Ji H M, Tang D Y
Free-carrier absorption of Hg1-xCdxTe epitaxial films
Journal of Applied Physics, 1996, 79: 7738-7742.Journal ArticleLi B, Chu J H, Chang Y, Gui Y S, Tang D Y
Optical absorption above the energy band gap in Hg1-xCdxTe
Infrared Physics & Technology, 1996, 37: 525-531.Journal ArticleLi B, Chen X Q, Chu J H, Cao J Y, Zhu J Q, Tang D Y
Growth and characterization of liquid-phase epitaxial Hg1-xCdxTe films
Thin Solid Films, 1996, 278: 1-5.Journal ArticleGuo S P, Chang Y, Zhang J M, Shen X C, Chu J H, Yuan S X
Effect of the post-As+-implantation thermal treatment on MBE HgCdTe optical properties
Journal of Electronic Materials, 1996, 25: 761-764.Journal ArticleFu R L, Chu J H, Zhang G P, Ma Y S, Sun X, Lee K H, Park T Y
Relaxation of excited states in C-60
Communications in Theoretical Physics, 1996, 26: 23-28.Journal ArticleChu J H, Tang D Y
Recent progress on HgCdTe at the national laboratory for infrared physics in China
Journal of Electronic Materials, 1996, 25: 1176-1182.Journal ArticleChang Y, Chu J H, Tang W G, Shen W Z, Tang D Y
Photoluminescence investigation on impurity behavior in Sb-doped HgCdTe
Infrared Physics & Technology, 1996, 37: 747-751.Journal ArticleZhang G P, Mao Y S, Zong X F, Sun X, Lu J C, Lee K H, Park T Y, Fu R L, Chu J H
Self-trapping process of exciton in C-60
Chinese Physics Letters, 1995, 12: 665-668.ConferenceLiu P L, Lu W, Lu X F, Gong H M, Hu X N, Mu Y M, Chu J H, Shen S C
Investigation of impurity defect level in Hg1-xCdxTe alloys using infrared magneto-photoconductivity
proceedings of the 7th International Conference on Narrow Gap Semiconductors, Santa fe, nm, F Jan 08-12, 1995, 1995.ConferenceLiu K, Chu J H, Guo S L, Tang D Y
Subband Landau levels from the magneto-capacitance spectroscopies
proceedings of the 7th International Conference on Narrow Gap Semiconductors, Santa fe, nm, F Jan 08-12, 1995, 1995.Journal ArticleLi B, Chu J H, Liu K, Tang D Y
Study on the Composition Profile of a Hg1-Xcdxte Epitaxy Film by Infrared Transmission Spectroscopy
Journal of Physics-Condensed Matter, 1995, 7: 29-35.Journal ArticleLi B, Chu J H, Cheng X Q, Liu K, Chao J Y, Tang D Y
Influence of Mercury Pressure on Liquidus Temperature and Composition of Liquid-Phase Epitaxial (Hg,Cd)Te
Journal of Crystal Growth, 1995, 148: 41-48.Journal ArticleLi B, Chu J H, Chen X Q, Cao J Y, Tang D Y
Influence of the Liquid-Phase Epitaxial-Growth Conditions on Composition Profile for Hg1-Xcdxte Film
Journal of Electronic Materials, 1995, 24: 975-981.ConferenceLi B, Chu J H, Chen X Q, Cao J Y, Tang D Y
Influence of mercury pressure on composition profile of LPE Hg1-xCdxTe film
proceedings of the 7th International Conference on Narrow Gap Semiconductors, Santa fe, nm, F Jan 08-12, 1995, 1995.ConferenceGui Y S, Chu J H, Gui L M
Effect of the distribution of photogenerated carrier on HgCdTe photoconductivity
proceedings of the 7th International Conference on Narrow Gap Semiconductors, Santa fe, nm, F Jan 08-12, 1995, 1995.Journal ArticleChang Y, Chu J H, Tang W G, Shen W Z, Li Z Y, Tang D Y, Guo S P, Yuan S X
Photoluminescence Study on Hg1-Xcdxte Thin-Film Implanted with as Ion
Acta Physica Sinica-Overseas Edition, 1995, 4: 606-611.ConferenceChang Y, Chu J H, Tang W G, Guo S P, Tang D Y
The study of mercury vacancies in Hg1-xCdxTe from capacitance and photoluminescence spectroscopy
proceedings of the Narrow Gap Semiconductors 1995, Santa fe, nm, F Jan 08-12, 1995, 1995.Journal ArticleLiu K, Chu J H, Tang D Y
Composition and Temperature-Dependence of the Refractive-Index in Hg1-Xcdxte
Journal of Applied Physics, 1994, 75: 4176-4179.Journal ArticleLiu K, Chu J H, Ou H J, Tang D Y
Hole Subband in P-Type Channel of Semiconductor Heterostructures
Journal of Applied Physics, 1994, 76: 7998-8000.Journal ArticleLiu K, Chu J H, Li B, Tang D Y
Measurement of Composition in Hg1-Xcdxte Epilayers
Applied Physics Letters, 1994, 64: 2818-2820.Journal ArticleChu J H, Sizmann R, Liu R, Nachev I, Koch F
Electron Subband Structure of Hgcdte Metal-Insulator-Semiconductor Heterostructures
Solid-State Electronics, 1994, 37: 1125-1128.Journal ArticleChu J H, Li B, Liu K, Tang D Y
Empirical Rule of Intrinsic Absorption-Spectroscopy in Hg1-Xcdxte
Journal of Applied Physics, 1994, 75: 1234-1235.Journal ArticleChu J H, Shen S C
The Study of Far-Infrared Phonon-Spectra on Hg1-Xcdxte
Semiconductor Science and Technology, 1993, 8: S86-S89.Journal ArticleChu J H, Shen S C
The Study of Far-Infrared Phonon-Spectra on Hg1-Xcdxte
Semiconductor Science and Technology, 1993, 8: S86-S89.Journal ArticleChu J H, Miao J, Shi Q, Liu K, Ji H
Transverse uniformity of composition x for Hg1-xCdxTe
Journal of Infrared and Millimeter Waves, 1992, 11: 411-414.Journal ArticleChu J H, Mi Z Y, Tang D Y
Band-to-Band Optical-Absorption in Narrow-Gap Hg1-Xcdxte Semiconductors
Journal of Applied Physics, 1992, 71: 3955-3961.Journal ArticleChu J H, Mi Z Y, Sizmann R, Koch F, Wollrab R, Ziegler J, Maier H
Influence of Resonant Defect States on Subband Structures in Hg1-Xcdxte
Journal of Vacuum Science & Technology B, 1992, 10: 1569-1573.Journal ArticleChu J H, Mi Z Y
Sizmann R, Koch F. Subband structure in the electric quantum limit for Hg1-xCdxTe
Phys Rev B Condens Matter, 1991, 44: 1717-1723.Journal ArticleChu J H, Mi Z G, Tang D Y
Intrinsic Absorption-Spectroscopy and Related Physical Quantities of Narrow-Gap Semiconductors Hg1-Xcdxte
Infrared Physics, 1991, 32: 195-211.Journal ArticleChu J H, Mi Z
Surface electron subband structures of Hg1-xCdxTe
Journal of Infrared and Millimeter Waves, 1991, 10: 427-442.
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1990-1980
Journal ArticleChu J H, Sizmann R, Koch F, Ziegle J, Maier H
Experimental study of inversion layer subband structure on HgCdTe
Chinese Journal of Semiconductors, 1990, 11: 332-340.Journal ArticleChu J H, Sizmann R, Koch F
Dispersion-Relation and Landau-Levels of Inversion Layer Subband on P-Hgcdte
Science in China Series a-Mathematics Physics Astronomy, 1990, 33: 1192-1200.Journal ArticleShen X C, Chu J H
Far Infrared Spectral Study of the Phonon States of the Mixed-Crystals Cdxhg1-Xte
Chinese Physics, 1986, 6: 294-303.Journal ArticleChu J H, Qian D R, Tang D Y
Burstein-Moss Effect in Hg1-Xcdxte
Physica Scripta, 1986, T14: 37-41.Journal ArticleShen X-c, Chu J H
Far-infrared reflection spectra and the multimode model for mixed crystal CdxHg1-xTe
Acta Physica Sinica, 1985, 34: 56-64.Journal ArticleQian D R, Tang W G, Shen J, Chu J H, Zheng G Z
Infrared-Absorption in in-Doped Degenerate Hg1-Xcdxte
Solid State Communications, 1985, 56: 813-816.Journal ArticleChu J H, Xu S, Ji H, Zhang W, Cheng S, Jiang R
Determination of composition of Hg1-xCdxTe with the method of infrared absorption
Chinese Journal of Infrared Research, 1985, 4: 255-260.Journal ArticleChu J H
Fermi level and Burstein-Moss effect of degenerate semiconductor Hg1-xCdxTe
Chinese Journal of Infrared Research, 1985, 4: 39-45.Journal ArticleShen X-c, Chu J H
Far infrared spectral study of the phonon states of the mixed crystals CdxHg1-xTe
Acta Physica Sinica, 1984, 33: 729-737.
Journal ArticleShen S C, Chu J H
Low-Frequency Phonon-Spectra of Mixed-Crystal CdxHg1-xTe
Solid State Communications, 1983, 48: 1017-1021.
Journal ArticleChu J H, Xu S H, Tang D Y
Energy-Gap Versus Alloy Composition and Temperature in Hg1-xCdxTe
Applied Physics Letters, 1983, 43: 1064-1066.| 标签: 传感器