跳至正文

1.Journal Article

Chao Chen, Zhe Yu*, Ying Tian, Fenglong Li, Zhengyang Kong, Xu Ran, Xing Wu, Kyung Jin Lee, Do Hwan Kim, Jung-Yong Lee, Jin Zhu*, Wu Bin Ying*
Transmembrane Inspired Mechano-Responsive Elastomers with Synergized Traction-Assisted Healing and Dual-Channel Sensing
Advanced Functional Materials.

Links | 标签: 传感器仿生




2.Conference

Lvjin Wang, Cong Wang, Linwei Zhou, Xieyu Zhou, Yuhao Pan, Xing Wu and Wei Ji
Optimal parameter-space for stabilizing the ferroelectric phase of Hf0.5Zr0.5O2 thin-films under strain and electric fields
Chinese Physical Society.

Links




3.Conference

Heyu Ren, Liangjian Lyu, Binbin Chen, C.-J. Richard Shi
(Best Student Paper Candidate) A -104dBm-SensitivityReceiver with Shared Wireless L0 and Envelope-Tracking MixerAchieving -46dB SIR
CICC


4.Journal

Jialu Huang, Xu Ran, Litao Sun, Hengchang Bi & Xing Wu
Recent advances in membrane technologies applied in oil–water separation
Discover Nano

5.Conference

Xu Ran, Yuhan Sun, Xing Wu*, Hengchang Bi*
Enhancing the Thermal Conductivity of Graphene-based Thermal Interface Materials by Polyimide Fiber Intercalation
IPFA 2024/

| 标签: 石墨烯

6.Conference

Junhao Shen, Pengyang Han, Shaohua Zuo, Fuwen Shi, Canguan Gao, Hengchang Bi, Xing Wu*
Study on the anti-crack propagation behavior of submicron pore-enriched elastomer composites
IPFA 2024/


7.Conference

Yu Zhe, Yiwen Luo, Junhao Shen, Xin Gao, Jie Shang* and Xing Wu*,
A printable metallic ink containing biphasic alloys for highly-reliable stretchable circuit
Martina Bay Convention Center, Singapore, IPFA 2024.

| 标签: 可靠性打印


8.Conference

Shiyi Zhang, Qing Zhang, Xing Wu, Yan Wang, Chaolun Wang,
Denoising of Transmission Electron Microscopy Images for Atomic Defect Identification
IPFA,2024/

| 标签: 原位电镜 可靠性

9.Conference

Lan Li, Ran Bi, Zuoyuan Dong, Changqing Ye, Chaolun Wang, Ming Li, Xing Wu, Xiaomei Li
Strain mapping approach of Si/SiGe heterostructure with geometrical phase technique IEEE IRPS, 2024, Forthcoming.

| 标签: 原位电镜可靠性


10.Journal Article

Lan Li, Ran Bi, Zuoyuan Dong, Changqing Ye, Jing Xie, Chaolun Wang, Xiaomei Li, Kin Leong Pey, Ming Li, Xing Wu
Atomic-scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy Electron, 2024

| 标签: 原位电镜可靠性


11.Conference

Jiangsen Yang, Liangjian Lyu,Zirui Dong,Heyu Ren,C.-J. Richard Shi

A 28-nW Noise-Robust Voice Activity Detector with Background Aware Feature Extraction

November 2023

Links | 标签: 语音识别算法

10.1109/A-SSCC58667.2023.10347926



12.Journal Article

Zewei Luo, Junhao Shen, Xu Ran, Zepeng Huang, Zaofeng Huang, Chaolun Wang, Chunhua Cai, Liangjian Lyv, Xin Lin, Litao Sun, Junhao Chu, Hengchang Bi, Xing Wu
Highly Sensitive and Linear Vibration-Based Flexible Modulus Sensing System for Human Modulus Monitoring and Disease Prevention
December 17, 2023

Links | 标签: 传感器可靠性    


13.Conference

Jialu Huang Xu Ran, Xing Wu; Bi, Hengchang
Graphene oxide hydrogel coated membrane for efficient oil-water separation
IWARR Shenzheng, Forthcoming.

BibTeX | 标签: 石墨烯


@conference{none,
title = {Graphene oxide hydrogel coated membrane for efficient oil-water separation},
author = {Xu Ran, Jialu Huang, Xing Wu, and Hengchang Bi},
year = {2023},
date = {2023-11-01},
urldate = {2023-11-01},
address = {Shenzheng},
organization = {IWARR},
keywords = {石墨烯},
tppubtype = {conference}
}



14.Conference

Xing Wu Xu Ran,; Bi, Hengchang
Graphene baseddegradable and antibacterial strainsensor for wound detection
Nature Conference-Flexible Electronics-Science for a Sustainable World Xiamen, Forthcoming.

BibTeX | 标签: 传感器


@conference{nokey,
title = { Graphene baseddegradable and antibacterial strainsensor for wound detection},
author = {Xu Ran, Xing Wu, and Hengchang Bi},
year = {2023},
date = {2023-10-31},
urldate = {2023-10-31},
address = {Xiamen},
organization = {Nature Conference-Flexible Electronics-Science for a Sustainable World},
keywords = {传感器},
tppubtype = {conference}
}



15.Conference

Wang, Qinzhen; Gu, Wenxian; Bi, Hengchang; Lyu, Liangjian; Qiao, Deli; Wu, Xing
A Spike-Sorting-Assisted Compressed Sensing Processor for High-Density Neural Interfaces
ASICON, Nanjing, Forthcoming.

Links | BibTeX | 标签: 芯片设计


@conference{nokey,
title = {A Spike-Sorting-Assisted Compressed Sensing Processor for High-Density Neural Interfaces},
author = {Qinzhen Wang and Wenxian Gu and Hengchang Bi and Liangjian Lyu and Deli Qiao and Xing Wu},
url = {http://www.asicon.org/},
year = {2023},
date = {2023-10-24},
publisher = {ASICON},
address = {Nanjing},
keywords = {芯片设计},
tppubtype = {conference}
}



16.Conference

Zheng, Xinyue; Zhang, Shiyi; Zhang, Mingyang; Li, Xiaomei; Wu, Xing
In Situ Device and System
ASICON, Nanjing, Forthcoming.

Links | BibTeX | 标签: 原位电镜    


   

@conference{nokey,
title = {In Situ Device and System},
author = {Xinyue Zheng and Shiyi Zhang and Mingyang Zhang and Xiaomei Li and Xing Wu},
url = {http://www.asicon.org/},
year = {2023},
date = {2023-10-24},
journal = {International Conference on ASIC},
publisher = {ASICON},
address = {Nanjing},
keywords = {原位电镜},
tppubtype = {conference}
}
   


   


17.Journal Article

Sheng, Zhiwei; Xie, Jing; Zhang, Shiyi; Zhang, Mingyang; Luo, Chen; Dong, Zuoyuan; Wang, Yan; Wu, Xing; Wang, Chaolun
Deep Learning for Analysis of Two-Dimensional Materials in High-Resolution Transmission Electron Microscopy Image
In: 2023.

Links | BibTeX | 标签: 原位电镜


@article{@INPROCEEDINGS,
title = {Deep Learning for Analysis of Two-Dimensional Materials in High-Resolution Transmission Electron Microscopy Image},
author = {Zhiwei Sheng and Jing Xie and Shiyi Zhang and Mingyang Zhang and Chen Luo and Zuoyuan Dong and Yan Wang and Xing Wu and Chaolun Wang},
doi = { 10.1109/IPFA58228.2023.10249141},
year = {2023},
date = {2023-09-30},
urldate = {2023-09-30},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}



18.Journal Article

Gui, Chen; Zhang, Zhihao; Li, Zongyi; luo, Chen; Xia, Jiang; Wu, Xing; Chu, Junhao
Deep learning analysis on transmission electron microscope imaging of atomic defects in two-dimensional materials
In: iScience, vol. 26, iss. 10, no. 107982, 2023.

Links | BibTeX | 标签: 原位电镜


@article{nokey,
title = {Deep learning analysis on transmission electron microscope imaging of atomic defects in two-dimensional materials},
author = {Chen Gui and Zhihao Zhang and Zongyi Li and Chen luo and Jiang Xia and Xing Wu and Junhao Chu},
doi = {https://doi.org/10.1016/j.isci.2023.107982},
year = {2023},
date = {2023-09-21},
urldate = {2023-09-21},
journal = {iScience},
volume = {26},
number = {107982},
issue = {10},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}



19.Conference

Zuoyuan Dong,; Zixuan Sun,; Xin Yang,; Xiaomei Li,; Yongkang Xue,; Chen Luo,; Puyang Cai,; Zirui Wang,; Shuying Wang,; Yewei Zhang,; Chaolun Wang,; Pengpeng Ren,; Zhigang Ji,; Xing Wu,; Runsheng Wang,; Huang, Ru
Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence
2023.

Links | BibTeX | 标签: 可靠性


@conference{nokey,
title = {Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence},
author = {Zuoyuan Dong, and Zixuan Sun, and Xin Yang, and Xiaomei Li, and Yongkang Xue, and Chen Luo, and Puyang Cai, and Zirui Wang, and Shuying Wang, and Yewei Zhang, and Chaolun Wang, and Pengpeng Ren, and Zhigang Ji, and Xing Wu, and Runsheng Wang, and Ru Huang},
doi = { 10.23919/VLSITechnologyandCir57934.2023.10185380},
year = {2023},
date = {2023-07-24},
urldate = {2023-07-24},
keywords = {可靠性},
pubstate = {published},
tppubtype = {conference}
}



20.Conference

Ran, X.; Wu, X.; Bi, H.
Reason for the failure of PDMS pacaking to Cure on Reduced Graphene Oxide Films
CSTIC, 2023.

BibTeX | 标签: 可靠性 石墨烯    


   

@conference{nokey,
title = {Reason for the failure of PDMS pacaking to Cure on Reduced Graphene Oxide Films},
author = {X. Ran and X. Wu and H. Bi},
year = {2023},
date = {2023-06-26},
urldate = {2023-06-26},
publisher = {CSTIC},
keywords = {可靠性, 石墨烯},
pubstate = {published},
tppubtype = {conference}
}
   


   


21.Conference

Huang, Chengfeng; Wu, Xing; Bi, Hengchang
Flexible Strain Sensors Pacaking
CSTIC, 2023.

BibTeX | 标签: 传感器


@conference{nokey,
title = {Flexible Strain Sensors Pacaking},
author = { Chengfeng Huang and Xing Wu and Hengchang Bi},
year = {2023},
date = {2023-06-26},
urldate = {2023-06-26},
publisher = {CSTIC},
keywords = {传感器},
pubstate = {published},
tppubtype = {conference}
}



22.Conference

Ren, Heyu; Ye, Dawei; Chen, Binbin; Gong, Wenjun; Jin, Xu; Xu, Rongjin; Lyu, Liangjian; Xu, Ling; Shi, C. -J. Richard
A 19- μ W Blocker-Tolerant Wake-Up Receiver With − 90-dBm Energy-Enhanced Sensitivity
In: IEEE Transactions on Microwave Theory and Techniques, pp. 1-16, 2023, ISSN: 0018-9480.

Links | BibTeX | 标签: 传感器 芯片设计


@article{nokey,
title = {A 19- μ W Blocker-Tolerant Wake-Up Receiver With − 90-dBm Energy-Enhanced Sensitivity},
author = {Heyu Ren and Dawei Ye and Binbin Chen and Wenjun Gong and Xu Jin and Rongjin Xu and Liangjian Lyu and Ling Xu and C.-J. Richard Shi},
url = {https://ieeexplore.ieee.org/document/10136382/authors#authors},
doi = {10.1109/TMTT.2023.3267542},
issn = {0018-9480},
year = {2023},
date = {2023-05-25},
urldate = {2023-05-25},
journal = {IEEE Transactions on Microwave Theory and Techniques},
pages = {1-16},
keywords = {传感器, 芯片设计},
pubstate = {published},
tppubtype = {article}
}



23.Conference

Ye, C.; Liu, D.; Bi, H.; Wu, X.; Wang, C.
Thermal Stability of VSe2 Investigated by In situ Transmission Electron Microscope
IEEE IPFA, 2023.

BibTeX | 标签: 原位电镜 可靠性


@conference{nokey,
title = {Thermal Stability of VSe2 Investigated by In situ Transmission Electron Microscope},
author = { C. Ye and D. Liu and H. Bi and X. Wu and C. Wang},
year = {2023},
date = {2023-04-21},
urldate = {2023-04-21},
publisher = {IEEE IPFA},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {conference}
}



24.Conference

Zhang, Z.; Chen, Z.; Shen, J.; Luo, C.; Li, X.; Wang, C.; Yang, X.; Wu, X.
Exploration of TEM Sample Preparation for GaN Dislocations Based on In situ FIB-SEM
IEEE IPFA, 2023.

BibTeX | 标签: 原位电镜 可靠性


@conference{nokey,
title = {Exploration of TEM Sample Preparation for GaN Dislocations Based on In situ FIB-SEM},
author = { Z. Zhang and Z. Chen and J. Shen and C. Luo and X. Li and C. Wang and X. Yang and X. Wu},
year = {2023},
date = {2023-04-21},
urldate = {2023-04-21},
publisher = {IEEE IPFA},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {conference}
}



25.Conference

Shen, J.; Sun, Y.; Gong, D.; Zheng, X.; Zuo, S.; Shi, F.; Wu, X.; Bi, H
Reliability Study of the Three-dimensional Porous Flexible Resistive Pressure Sensor
IEEE IPFA, 2023.

BibTeX | 标签: 传感器 可靠性


@conference{nokey,
title = {Reliability Study of the Three-dimensional Porous Flexible Resistive Pressure Sensor},
author = {J. Shen and Y. Sun and D. Gong and X. Zheng and S. Zuo and F. Shi and X. Wu and H. Bi},
year = {2023},
date = {2023-04-21},
urldate = {2023-04-21},
publisher = {IEEE IPFA},
keywords = {传感器, 可靠性},
pubstate = {published},
tppubtype = {conference}
}



26.Conference

Sheng, Z.; Zhang, S.; Zhang, M.; Luo, C.; Dong, Z.; Wang, Y.; Wu, X.; Wang, C.
Deep Learning for Analysis of Two-Dimensional Materials in High-Resolution Transmission Electron Microscopy Image
IEEE IPFA, 2023.

BibTeX | 标签: 原位电镜


@conference{nokey,
title = {Deep Learning for Analysis of Two-Dimensional Materials in High-Resolution Transmission Electron Microscopy Image},
author = {Z. Sheng and S. Zhang and M. Zhang and C. Luo and Z. Dong and Y. Wang and X. Wu and C. Wang},
year = {2023},
date = {2023-04-21},
urldate = {2023-04-21},
publisher = {IEEE IPFA},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {conference}
}



27.Journal Article

Shen, Junhao; Guo, Yixin; Fu, Tianyu; Yao, Shengping; Zhou, Jun; Wang, Dongfeng; Bi, Hengchang; Zuo, Shaohua; Wu, Xing; Shi, Fuwen; Jiang, Jinchun; Chu, Junhao
Skin-Inspired Hierarchical Structure Sensor for Ultrafast Active Human–Robot Interaction
In: Advanced Materials Technologies, no. 202202008, pp. 1-12, 2023, ISSN: 2365-709X.

Links | BibTeX | 标签: 传感器 石墨烯


@article{nokey,
title = {Skin-Inspired Hierarchical Structure Sensor for Ultrafast Active Human–Robot Interaction},
author = {Junhao Shen and Yixin Guo and Tianyu Fu and Shengping Yao and Jun Zhou and Dongfeng Wang and Hengchang Bi and Shaohua Zuo and Xing Wu and Fuwen Shi and Jinchun Jiang and Junhao Chu},
url = {https://onlinelibrary.wiley.com/doi/10.1002/admt.202202008},
doi = {10.1002/admt.202202008},
issn = {2365-709X},
year = {2023},
date = {2023-04-04},
urldate = {2023-04-04},
journal = {Advanced Materials Technologies},
number = {202202008},
pages = {1-12},
keywords = {传感器, 石墨烯},
pubstate = {published},
tppubtype = {article}
}



28.Conference

Dong, Z.; Sun, Z.; Yang, X.; Li, X.; Xue, Y.; Luo, C.; Cai, P.; Wang, Z.; Wang, S.; Zhang, Y.; Wang, C.; Ren, P.; Ji, Z.; Wu, X.; Wang, R.; Huang, R.
Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence
IEEE Symposium on VLSI Technology and Circuits (VLSI), 2023.

BibTeX | 标签: 原位电镜 可靠性


@conference{nokey,
title = {Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence},
author = {Z. Dong and Z. Sun and X. Yang and X. Li and Y. Xue and C. Luo and P. Cai and Z. Wang and S. Wang and Y. Zhang and C. Wang and P. Ren and Z. Ji and X. Wu and R. Wang and R. Huang},
year = {2023},
date = {2023-03-31},
urldate = {2023-03-31},
publisher = {IEEE Symposium on VLSI Technology and Circuits (VLSI)},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {conference}
}



29.Journal Article

Mu, Geng; Lyu, Liangjian; Ye, Dawei; Shi, C. -J. Richard
A Chopper Amplifier with a Low Duty-cycle Sub-sampling In The Switched-capacitor Integrator for Noise Reduction
In: Electronics Letters, vol. 59, iss. 7, pp. 1-16, 2023, ISSN: 0013-5194.

Links | BibTeX | 标签: 传感器 芯片设计


@article{nokey,
title = {A Chopper Amplifier with a Low Duty-cycle Sub-sampling In The Switched-capacitor Integrator for Noise Reduction},
author = {Geng Mu and Liangjian Lyu and Dawei Ye and C.-J. Richard Shi},
url = {https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/ell2.12774},
doi = {https://doi.org/10.1049/ell2.12774},
issn = {0013-5194},
year = {2023},
date = {2023-03-25},
urldate = {2023-03-25},
journal = {Electronics Letters},
volume = {59},
issue = {7},
pages = {1-16},
keywords = {传感器, 芯片设计},
pubstate = {published},
tppubtype = {article}
}



30.Conference

Zhang, Z.; Li, Q.; Dong, Zuoyuan; Wang, Wanting; Lai, Shentao; Yang, Xin; Liang, Fang; Wang, Chaolun; Luo, Chen; Lyu, Liangjian; Xu, Jiamin; Wu, Xing
Microscopic Characterization of Failure Mechanisms in Long-Term Implanted Microwire Neural Electrodes
IEEE IRPS, 2023.

BibTeX | 标签: 传感器 可靠性


@conference{nokey,
title = {Microscopic Characterization of Failure Mechanisms in Long-Term Implanted Microwire Neural Electrodes},
author = { Z. Zhang and Q. Li and Zuoyuan Dong and Wanting Wang and Shentao Lai and Xin Yang and Fang Liang and Chaolun Wang and Chen Luo and Liangjian Lyu and Jiamin Xu and Xing Wu},
year = {2023},
date = {2023-03-16},
urldate = {2023-03-16},
publisher = { IEEE IRPS},
keywords = {传感器, 可靠性},
pubstate = {published},
tppubtype = {conference}
}



31.Journal Article

Cheng, Zhiheng; Xie, Xingran; Yang, Yimin; Wang, Chaolun; Luo, Chen; Bi, Hengchang; Wang, Yan; Chu, Junhao; Wu, Xing
Neural Network Approach for Ferroelectric Hafnium Oxide Phase Identification at The Atomistic Scale
In: Materials Today Electronics, vol. 3, iss. 1, no. 100027, pp. 1-7, 2023, ISSN: 2772-9494.

Links | BibTeX | 标签: 原位电镜


@article{nokey,
title = {Neural Network Approach for Ferroelectric Hafnium Oxide Phase Identification at The Atomistic Scale},
author = {Zhiheng Cheng and Xingran Xie and Yimin Yang and Chaolun Wang and Chen Luo and Hengchang Bi and Yan Wang and Junhao Chu and Xing Wu},
url = {https://www.sciencedirect.com/science/article/pii/S2772949423000037},
doi = {10.1016/j.mtelec.2023.100027},
issn = {2772-9494},
year = {2023},
date = {2023-03-05},
urldate = {2023-03-05},
journal = {Materials Today Electronics},
volume = {3},
number = {100027},
issue = {1},
pages = {1-7},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}



32.Journal Article

Li, Xiaomei; Han, Bo; Zhu, Ruixue; Shi, Ruochen; Wu, Mei; Sun, Yuanwei; Li, Yuehui; Liu, Bingyao; Wang, Lifen; Zhang, Jingmin; Tan, Congbing; Gao, Peng; Bai, Xuedong
Dislocation-tuned Ferroelectricity and Ferromagnetism of the BiFeO3/SrRuO3 Interface
In: Proceedings of the National Academy of Sciences, vol. 120, no. 13, pp. e2213650120, 2023, ISSN: 0027-8424.

Links | BibTeX


@article{nokey,
title = {Dislocation-tuned Ferroelectricity and Ferromagnetism of the BiFeO3/SrRuO3 Interface},
author = {Xiaomei Li and Bo Han and Ruixue Zhu and Ruochen Shi and Mei Wu and Yuanwei Sun and Yuehui Li and Bingyao Liu and Lifen Wang and Jingmin Zhang and Congbing Tan and Peng Gao and Xuedong Bai},
url = {https://doi.org/10.1073/pnas.2213650120},
doi = {10.1073/pnas.2213650120},
issn = {0027-8424},
year = {2023},
date = {2023-02-05},
urldate = {2023-02-05},
journal = {Proceedings of the National Academy of Sciences},
volume = {120},
number = {13},
pages = {e2213650120},
keywords = {},
pubstate = {published},
tppubtype = {article}
}


33.Journal Article

Shen, Junhao; Gong, Danni; Li, Peiyang; Sun, Yuhan; Zuo, Shaohua; Shi, Fuwen; Wu, Xing; Chu, Junchao
Design Intelligent Pressure Sensing Devices and System Integrated with Conductor-Coated Porous Composites
In: Advanced Sensor Research, vol. 2, iss. 1, 2023, ISSN: 2751-1219.

Links | BibTeX | 标签: 传感器 石墨烯


@article{nokey,
title = {Design Intelligent Pressure Sensing Devices and System Integrated with Conductor-Coated Porous Composites},
author = {Junhao Shen and Danni Gong and Peiyang Li and Yuhan Sun and Shaohua Zuo and Fuwen Shi and Xing Wu and Junchao Chu},
url = {https://onlinelibrary.wiley.com/doi/full/10.1002/adsr.202200091},
doi = {10.1002/adsr.2022},
issn = {2751-1219},
year = {2023},
date = {2023-02-02},
urldate = {2023-02-02},
journal = {Advanced Sensor Research},
volume = {2},
issue = {1},
keywords = {传感器, 石墨烯},
pubstate = {published},
tppubtype = {article}
}



34.Conference

Yang, Shufan; Kernec, Julien Le; Romain, Olivier; Fioranelli, Francesco; Cadart, Pierre; Fix, Jérémy; Ren, Chenfang; Manfredi, Giovanni; Letertre, Thierry; Sáenz, Israel David Hinostroza; Zhang, Jifa; Liang, Huaiyuan; Wang, Xiangrong; Li, Gang; Chen, Zhaoxi; Liu, Kang; Chen, Xiaolong; Li, Jiefang; Wu, Xing; Chen, Yichang; Jin, Tian
The Human Activity Radar Challenge: Benchmarking Based on the ‘Radar Signatures of Human Activities’ Dataset From Glasgow University
Institute of Electrical and Electronics Engineers, vol. 27, 2023, ISBN: 2168-2194.

Links | BibTeX | 标签: 传感器


@conference{nokey,
title = {The Human Activity Radar Challenge: Benchmarking Based on the ‘Radar Signatures of Human Activities’ Dataset From Glasgow University},
author = {Shufan Yang and Julien Le Kernec and Olivier Romain and Francesco Fioranelli and Pierre Cadart and Jérémy Fix and Chenfang Ren and Giovanni Manfredi and Thierry Letertre and Israel David Hinostroza Sáenz and Jifa Zhang and Huaiyuan Liang and Xiangrong Wang and Gang Li and Zhaoxi Chen and Kang Liu and Xiaolong Chen and Jiefang Li and Xing Wu and Yichang Chen and Tian Jin},
url = {https://ieeexplore.ieee.org/document/10032210?source=authoralert},
doi = {10.1109/JBHI.2023.3240895},
isbn = {2168-2194},
year = {2023},
date = {2023-01-30},
urldate = {2023-01-30},
booktitle = {Institute of Electrical and Electronics Engineers},
volume = {27},
issue = {4},
pages = {1813 - 1824},
keywords = {传感器},
pubstate = {published},
tppubtype = {conference}
}



35.Journal Article

Ranjan, Alok; HejunXu,; Wang, Chaolun; Molina, Joel; Wu, Xing; Zhang, Hui; Sun, Litao; Chu, Junhao; LeongPey, Kin
Probing Resistive Switching in HfO2/Al2O3 Bilayer Oxides Using In-situ Transmission Electron Microscopy
In: Applied Materials Today, vol. 31, 2023, ISSN: 2352-9407./

Links | BibTeX | 标签: 原位电镜 可靠性

@article{nokey,
title = {Probing Resistive Switching in HfO2/Al2O3 Bilayer Oxides Using In-situ Transmission Electron Microscopy},
author = {Alok Ranjan and HejunXu and Chaolun Wang and Joel Molina and Xing Wu and Hui Zhang and Litao Sun and Junhao Chu and Kin LeongPey },
url = {https://www.sciencedirect.com/science/article/pii/S2352940723000094},
doi = {10.1016/j.apmt.2023.101739},
issn = {2352-9407},
year = {2023},
date = {2023-01-19},
journal = {Applied Materials Today},
volume = {31},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}

36.Journal Article

Tang, Luping; Zhang, Yangyang; Liao, Chen; He, Longbing; Wu, Xing; Liu, Yiwei; Sun, Litao
Eye-Resolvable Surface-Plasmon-Enhanced Fluorescence Temperature Sensor
In: Nanomaterials, vol. 12, iss. 22, 2022, ISSN: 2079-4991.

Links | BibTeX | 标签: 传感器


@article{nokey,
title = {Eye-Resolvable Surface-Plasmon-Enhanced Fluorescence Temperature Sensor},
author = {Luping Tang and Yangyang Zhang and Chen Liao and Longbing He and Xing Wu and Yiwei Liu and Litao Sun },
url = {https://www.mdpi.com/2079-4991/12/22/4019},
doi = {10.3390/nano12224019},
issn = {2079-4991},
year = {2022},
date = {2022-11-16},
urldate = {2022-11-16},
journal = {Nanomaterials},
volume = {12},
issue = {22},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



37.Journal Article

Chen, Yixuan; Wu, Xinyue; Shen, Junhao; Huang, Zepeng; Wang, Zhongrui; Lyu, Liangjian; Bi, Hengchang; Wu, Xing; Shen, Guozhen
Review of the Intelligent Sensor-Memory-Control Fusion Systems Journal
In: Advanced Sensor Research, 2022.

Links | BibTeX | 标签: 传感器


@article{nokey,
title = {Review of the Intelligent Sensor-Memory-Control Fusion Systems Journal},
author = {Yixuan Chen and Xinyue Wu and Junhao Shen and Zepeng Huang and Zhongrui Wang and Liangjian Lyu and Hengchang Bi and Xing Wu and Guozhen Shen},
doi = {10.1002/adsr.202200034},
year = {2022},
date = {2022-11-13},
urldate = {2022-11-13},
journal = {Advanced Sensor Research},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



38.Journal Article

Luo, Chen; Xu, Tao; Yu, Zhihao; Wang, Xinran; Sun, Litao; Chu, Junhao; Wu, Xing
Probing Gate Dielectrics for Two-dimensional Electronics at Atomistic Scale Using Transmission Electron Microscopy
In: IEEE Transactions on Electron Devices, 2022, ISBN: 0018-9383.

Links | BibTeX | 标签: 原位电镜 可靠性


@article{nokey,
title = {Probing Gate Dielectrics for Two-dimensional Electronics at Atomistic Scale Using Transmission Electron Microscopy},
author = {Chen Luo and Tao Xu and Zhihao Yu and Xinran Wang and Litao Sun and Junhao Chu and Xing Wu},
doi = {10.1109/TED.2022.3220729},
isbn = {0018-9383},
year = {2022},
date = {2022-11-10},
urldate = {2022-11-10},
journal = {IEEE Transactions on Electron Devices},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}



39.Journal Article

Ding, Xuyin; Zhang, Yecheng; Zhang, Yue; Ding, Xufa; Zhang, Hanxin; Cao, Tian; Qu, Zhi-bei; Ren, Jing; Li, Lei; Guo, Zhijun; Xu, Feng; Wang, Qi-Xian; Wu, Xing; Shi, Guoyue; Haick, Hossam; Zhang, Min
Modular Assembly of MXene Frameworks for Noninvasive Disease Diagnosis via Urinary Volatiles
In: ACS Nano, pp. 17376–17388, 2022, ISSN: 1936-0851.

Links | BibTeX | 标签: 传感器


@article{nokey,
title = {Modular Assembly of MXene Frameworks for Noninvasive Disease Diagnosis via Urinary Volatiles},
author = {Xuyin Ding and Yecheng Zhang and Yue Zhang and Xufa Ding and Hanxin Zhang and Tian Cao and Zhi-bei Qu and Jing Ren and Lei Li and Zhijun Guo and Feng Xu and Qi-Xian Wang and Xing Wu and Guoyue Shi and Hossam Haick and Min Zhang



},
url = {https://pubs.acs.org/doi/10.1021/acsnano.2c08266},
doi = {10.1021/acsnano.2c08266},
issn = {1936-0851},
year  = {2022},
date = {2022-10-13},
urldate = {2022-10-13},
journal = {ACS Nano},
pages = {17376–17388},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



40.Journal Article

Luo, Chen; Dong, Zuoyuan; Xu, Tao; Yang, Xin; Zhang, Hui; Bi, Hengchang; Wang, Chaolun; Sun, Litao; Chu, Junhao; Wu, Xing
Tailoring the Phase Transition of Silver Selenide at The Atomistic Scale
In: Nanoscale, 2022, ISSN: 2040-3372.

Links | BibTeX | 标签: 原位电镜 可靠性


@article{nokey,
title = {Tailoring the Phase Transition of Silver Selenide at The Atomistic Scale},
author = {Chen Luo and Zuoyuan Dong and Tao Xu and Xin Yang and Hui Zhang and Hengchang Bi and Chaolun Wang and Litao Sun and Junhao Chu and Xing Wu },
url = {https://pubs.rsc.org/en/content/articlelanding/2022/nr/d2nr04248g/unauth},
doi = {10.1039/D2NR04248G},
issn = {2040-3372},
year = {2022},
date = {2022-08-31},
urldate = {2022-08-31},
journal = {Nanoscale},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}



41.Journal Article

Cheng, Zhiheng; Wang, Chaolun; Wu, Xing; Chu, Junhao
Review In Situ Transmission Electron Microscope with Machine Learning
In: Journal of Semiconductors, vol. 43, iss. 8, no. 081001, pp. 1-15, 2022, ISSN: 1674-4926.

Links | BibTeX | 标签: 原位电镜 可靠性


@article{nokey,
title = {Review In Situ Transmission Electron Microscope with Machine Learning},
author = {Zhiheng Cheng and Chaolun Wang and Xing Wu and Junhao Chu},
doi = {10.1088/1674-4926/43/8/081001},
issn = {1674-4926},
year = {2022},
date = {2022-08-01},
urldate = {2022-08-01},
journal = {Journal of Semiconductors},
volume = {43},
number = {081001},
issue = {8},
pages = {1-15},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}



42.Journal Article

Luo, Zewei; Huang, Zepeng; Liu, Xingchi; Ye, Changqing; Luo, Chen; Wang, Chaolun; Cai, Chunhua; Lv, Liangjian; Bi, Hengchang; Chu, Junhao; Wu, Xing; Shen, Guozhen
Self-Adaptive Hierarchical Gradient Structure-Based In Situ Sensor with High-Pressure Resolutio
In: Advanced Materials Technologies, pp. 1-10, 2022, ISSN: 2365-709X.

Links | BibTeX | 标签: 传感器 石墨烯


@article{nokey,
title = {Self-Adaptive Hierarchical Gradient Structure-Based In Situ Sensor with High-Pressure Resolutio},
author = {Zewei Luo and Zepeng Huang and Xingchi Liu and Changqing Ye and Chen Luo and Chaolun Wang and Chunhua Cai and Liangjian Lv and Hengchang Bi and Junhao Chu and Xing Wu and Guozhen Shen},
doi = {10.1002/admt.202200848},
issn = {2365-709X},
year  = {2022},
date = {2022-07-27},
urldate = {2022-07-27},
journal = {Advanced Materials Technologies},
pages = {1-10},
keywords = {传感器, 石墨烯},
pubstate = {published},
tppubtype = {article}
}



43.Conference

Yang, Xin; Xue, Yongkang; Dong, Zuoyuan; Wang, Chaoluo; Ji, Zhigang; Tsai, Chihang; Wu, Yongren; Yu, Weisong; Wang, Runsheng; Wu*, Xing
Interconnection Reliability on FinFET Devices
IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA) 2022.

BibTeX | 标签: 原位电镜 可靠性


@conference{NOKEY,
title = {Interconnection Reliability on FinFET Devices},
author = {Xin Yang and Yongkang Xue and Zuoyuan Dong and Chaoluo Wang and Zhigang Ji and Chihang Tsai and Yongren Wu and Weisong Yu and Runsheng Wang and Xing Wu*},
year = {2022},
date = {2022-07-18},
urldate = {2022-07-18},
organization = {IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA)},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {conference}
}



44.Conference

Qiao, Yuchong; Wu, Xinyue; Wang, Chaolun; Li, Z. B.; Wu*, Xing
Reliability Study of Hydrogel-Based Flexible Supercapacitor
IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA) 2022.

BibTeX | 标签: 传感器 可靠性 石墨烯


@conference{NOKEY,
title = {Reliability Study of Hydrogel-Based Flexible Supercapacitor},
author = {Yuchong Qiao and Xinyue Wu and Chaolun Wang and Z.B. Li and Xing Wu*},
year = {2022},
date = {2022-07-18},
urldate = {2022-07-18},
organization = {IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA)},
keywords = {传感器, 可靠性, 石墨烯},
pubstate = {published},
tppubtype = {conference}
}



45.Conference

Huang, Zepeng; Luo, Zewei; Lyu, Liangjian; Wu, Xing
An in Situ Embedded System for Electrocardiography and Photoplethysmography Acquisition
International Conference on Electronics Technology (ICET) 2022.

BibTeX | 标签: 传感器 芯片设计


@conference{nokey,
title = {An in Situ Embedded System for Electrocardiography and Photoplethysmography Acquisition},
author = {Zepeng Huang and Zewei Luo and Liangjian Lyu and Xing Wu},
year = {2022},
date = {2022-07-14},
organization = {International Conference on Electronics Technology (ICET)},
keywords = {传感器, 芯片设计},
pubstate = {published},
tppubtype = {conference}
}



46.Journal Article

Geng, Xiangshun; Zhang, Peigen; Ren, Jun; Dun, Guan-Hua; Li, Yuanyuan; Jin, Jialun; Wang, Chaolun; Wu, Xing; Xie, Dan; Tian, He; Yang, Yi; Ren, Tian-Ling
Directly Integrated Mixed-dimensional Van der Waals Graphene/Perovskite Heterojunction for Fast Photodetection
In: InfoMat, pp. 1-11, 2022, ISSN: 2567-3165.

Links | BibTeX | 标签: 传感器 石墨烯


@article{nokey,
title = {Directly Integrated Mixed-dimensional Van der Waals Graphene/Perovskite Heterojunction for Fast Photodetection},
author = {Xiangshun Geng and Peigen Zhang and Jun Ren and Guan-Hua Dun and Yuanyuan Li and Jialun Jin and Chaolun Wang and Xing Wu and Dan Xie and He Tian and Yi Yang and Tian-Ling Ren},
editor = { },
doi = {doi.org/10.1002/inf2.12347},
issn = {2567-3165},
year = {2022},
date = {2022-07-10},
urldate = {2022-07-10},
journal = {InfoMat},
pages = {1-11},
keywords = {传感器, 石墨烯},
pubstate = {published},
tppubtype = {article}
}



47.Journal Article

Wang, Yalan; Zhang, Miao; Panlin Li and, Xinqian Chen; Xue, Zhongying; Wu, Xing; Di, Zengfeng
Structural Properties of Grain Boundary in Graphene Grown on Germanium Substrates with Different Orientations
In: Appl. Phys. Lett. , vol. 121, iss. 1, no. 011901, pp. 1-6, 2022, ISSN: 0003-6951.

Links | BibTeX | 标签: 原位电镜 石墨烯


@article{nokey,
title = {Structural Properties of Grain Boundary in Graphene Grown on Germanium Substrates with Different Orientations},
author = {Yalan Wang and Miao Zhang and Panlin Li and, Xinqian Chen and Zhongying Xue and Xing Wu and Zengfeng Di},
doi = {10.1063/5.0099263},
issn = {0003-6951},
year = {2022},
date = {2022-07-07},
urldate = {2022-07-07},
journal = {Appl. Phys. Lett. },
volume = {121},
number = { 011901},
issue = {1},
pages = {1-6},
keywords = {原位电镜, 石墨烯},
pubstate = {published},
tppubtype = {article}
}



48.Journal Article

Wang, Shuying; Huang, Haizhou; Liu, Cheng; Xia, Yuyan; Ye, Changqing; Luo, Zewei; Cai, Chunhua; Wang, Chaolun; Lyu, Liangjian; Hengchang Bi, Xing Wu; Sun, Litao
Waterproof and Breathable Graphene-Based Electronic Fabric for Wearable Sensors
In: Adv. Mater. Technol, vol. 2200149, iss. 2200149, pp. 1-8, 2022, ISSN: 2365-709X.

Links | BibTeX | 标签: 传感器 石墨烯


@article{nokey,
title = {Waterproof and Breathable Graphene-Based Electronic Fabric for Wearable Sensors},
author = {Shuying Wang and Haizhou Huang and Cheng Liu and Yuyan Xia and Changqing Ye and Zewei Luo and Chunhua Cai and Chaolun Wang and Liangjian Lyu and Hengchang Bi,Xing Wu and Litao Sun},
doi = { 10.1002/admt.202200149},
issn = {2365-709X},
year = {2022},
date = {2022-06-28},
urldate = {2022-06-28},
journal = {Adv. Mater. Technol},
volume = {2200149},
issue = {2200149},
pages = {1-8},
keywords = {传感器, 石墨烯},
pubstate = {published},
tppubtype = {article}
}



49.Journal Article

Chen, Lei; Yao, Xingye; Liu, Xingchi; Luo, Zewei; Ye, Changqing; Huang, Chengfeng; Wang, Chaolun; Cai, Chunhua; Lyu, Liangjian; Wu, Xing; Bi, Hengchang
High Throughput In–Situ Temperature Sensor Array with High Sensitivity and Excellent Linearity for Wireless Body Temperature Monitoring
In: Small Struct., iss. 2200080, pp. 1-8, 2022, ISSN: 2688-4062.

Links | BibTeX | 标签: 传感器 石墨烯


@article{nokey,
title = {High Throughput In–Situ Temperature Sensor Array with High Sensitivity and Excellent Linearity for Wireless Body Temperature Monitoring},
author = {Lei Chen and Xingye Yao and Xingchi Liu and Zewei Luo and Changqing Ye and Chengfeng Huang and Chaolun Wang and Chunhua Cai and Liangjian Lyu and Xing Wu and Hengchang Bi},
doi = {10.1002/sstr.202200080},
issn = {2688-4062},
year = {2022},
date = {2022-06-11},
urldate = {2022-06-11},
journal = {Small Struct.},
issue = {2200080},
pages = {1-8},
keywords = {传感器, 石墨烯},
pubstate = {published},
tppubtype = {article}
}



50.Journal Article

Luo, Chen; Yu, Zhihao; Ning, Hongkai; Dong, Zuoyuan; Wang, Chaolun; Sun, Litao; Wu, Xing; Wang, Xinran; and Junhao Chu,
Enhancement of the Ferroelectricity by Interface Engineering Observed by In Situ Transmission Electron Microscope
In: Applied Physics Letters, 2022, ISSN: 0003-6951.

Links | BibTeX | 标签: 原位电镜 可靠性


@article{nokey,
title = {Enhancement of the Ferroelectricity by Interface Engineering Observed by In Situ Transmission Electron Microscope},
author = {Chen Luo and Zhihao Yu and Hongkai Ning and Zuoyuan Dong and Chaolun Wang and Litao Sun and Xing Wu and Xinran Wang and and Junhao Chu},
doi = {10.1063/5.0087715},
issn = {0003-6951},
year = {2022},
date = {2022-06-02},
urldate = {2022-06-02},
journal = {Applied Physics Letters},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}



51.Journal Article

Zhang, Yewei; Wang, Chaolun; Wu, Xing
Review of Electrical Stimulus Methods of In Situ Transmission Electron Microscope to Study Resistive Random Access Memory
In: Nanoscale, 2022, ISBN: 2040-3364.

Links | BibTeX | 标签: 传感器 原位电镜 可靠性


@article{nokey,
title = {Review of Electrical Stimulus Methods of In Situ Transmission Electron Microscope to Study Resistive Random Access Memory},
author = {Yewei Zhang and Chaolun Wang and Xing Wu },
doi = {10.1039/D2NR01872A},
isbn = {2040-3364},
year = {2022},
date = {2022-06-02},
urldate = {2022-06-02},
journal = {Nanoscale},
keywords = {传感器, 原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}



52.Conference

Luo, Chen; Wang, Chaolun; Ma, Shuo; Liang, Fang; Luo, Zewei; Wu*, Xing; Chu, Junhao
In Situ Transmission Electron Microscope Study of Reliability in Molybdenum Disulfide Based Strain Sensors
vol. 120, no. 23, IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA) 2022.

BibTeX | 标签: 传感器 原位电镜


@conference{NOKEY,
title = {In Situ Transmission Electron Microscope Study of Reliability in Molybdenum Disulfide Based Strain Sensors},
author = {Chen Luo and Chaolun Wang and Shuo Ma and Fang Liang and Zewei Luo and Xing Wu* and Junhao Chu},
year = {2022},
date = {2022-06-02},
urldate = {2022-06-02},
volume = {120},
number = {23},
organization = {IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA)},
keywords = {传感器, 原位电镜},
pubstate = {published},
tppubtype = {conference}
}



53.Journal Article

Wangxu, Haohan; Lyu, Liangjian; Bi, Hengchang; Wu, Xing
Flexible Pressure Sensor Array with Multi-Channel Wireless Readout Chip
In: Sensors, vol. 22, iss. 10, pp. 1-9, 2022, ISSN: 1424-8220 .

Links | BibTeX | 标签: 传感器


@article{nokey,
title = {Flexible Pressure Sensor Array with Multi-Channel Wireless Readout Chip},
author = {Haohan Wangxu and Liangjian Lyu and Hengchang Bi and Xing Wu },
doi = {10.3390/s22103934},
issn = {1424-8220 },
year = {2022},
date = {2022-05-23},
urldate = {2022-05-23},
journal = {Sensors},
volume = {22},
issue = {10},
pages = {1-9},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



54.Journal Article

Shen, Yang; Dong, Zuoyuan; Sun, Yabin; Guo, Hao; Wu, Fan; Li, Xianglong; Tang, Jun; Liu, Jun; Wu, Xing; Tian, He; Ren, Tian-Ling
The Trend of 2D Transistors Toward Integrated Circuits: Scaling Down and New Mechanisms
In: Adv. Mater., 2022, ISSN: 0935-9648.

Links | BibTeX | 标签: 传感器 石墨烯


@article{nokey,
title = {The Trend of 2D Transistors Toward Integrated Circuits: Scaling Down and New Mechanisms},
author = {Yang Shen and Zuoyuan Dong and Yabin Sun and Hao Guo and Fan Wu and Xianglong Li and Jun Tang and Jun Liu and Xing Wu and He Tian and Tian-Ling Ren},
doi = {10.1002/adma.202201916},
issn = {0935-9648},
year = {2022},
date = {2022-05-10},
urldate = {2022-05-10},
journal = { Adv. Mater.},
keywords = {传感器, 石墨烯},
pubstate = {published},
tppubtype = {article}
}



55.Journal Article

Xiaojiao, Guo; Honglei, Chen; Jihong, Bian; Fuyou, Liao; Jingyi, Ma; Simeng, Zhang; Xinzhi, Zhang; Junqiang, Zhu; Chen, Luo; Zijian, Zhang; Lingyi, Zong; Yin, Xia; Chuming, Sheng; Zihan, Xu; Saifei, Gou; Xinyu, Wang; Peng, Gong; Liwei, Liu; Xixi, Jiang; Zhenghua, An; Chunxiao, Cong; Zhijun, Qiu; Xing, Wu; Peng, Zhou; Xinyu, Chen; Ling, Tong; Wenzhong, Bao
Stacking Monolayers at will: A Scalable Device Optimization Strategy for Two-dimensional Semiconductor
In: NANO RES, pp. 1-8, 2022, ISSN: 1998-0124.

Links | BibTeX | 标签: 传感器


@article{,
title = {Stacking Monolayers at will: A Scalable Device Optimization Strategy for Two-dimensional Semiconductor},
author = {Xiaojiao, Guo and Honglei, Chen and Jihong, Bian and Fuyou, Liao and Jingyi, Ma and Simeng, Zhang and Xinzhi, Zhang and Junqiang, Zhu and Chen, Luo and Zijian, Zhang and Lingyi, Zong and Yin, Xia and Chuming, Sheng and Zihan, Xu and Saifei, Gou and Xinyu, Wang and Peng, Gong and Liwei, Liu and Xixi, Jiang and Zhenghua, An and Chunxiao, Cong and Zhijun, Qiu and Xing, Wu and Peng, Zhou and Xinyu, Chen and Ling, Tong and Wenzhong, Bao},
doi = {10.1007/s12274-022-4280-z},
issn = {1998-0124},
year = {2022},
date = {2022-05-05},
urldate = {2022-05-05},
journal = {NANO RES},
pages = {1-8},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



56.Journal Article

Dong, Zuo Yuan; Zhou, Yan; Chen, Xin-Qian; Li, Wei-Jian; Cao, Zi-Yu; Luo, Chen; Zhong, Guo-Hua; Peng, Qing; Wu∗, Xing; Che∗, Xiao-Jia
Effect of Low-Frequency Optical Phonons on the Thermal Conductivity of 2H Molybdenum Disulfide
In:  Physical Review B , vol. 105, iss. 184301 , 2022.

Links | BibTeX | 标签: 传感器 原位电镜


@article{NOKEYt,
title = {Effect of Low-Frequency Optical Phonons on the Thermal Conductivity of 2H Molybdenum Disulfide},
author = {Zuo Yuan Dong and Yan Zhou and Xin-Qian Chen and Wei-Jian Li and Zi-Yu Cao and Chen Luo and Guo-Hua Zhong and Qing Peng and Xing Wu∗ and Xiao-Jia Che∗},
doi = {10.1103/PhysRevB.105.184301},
year = {2022},
date = {2022-05-03},
urldate = {2022-05-03},
journal = { Physical Review B },
volume = {105},
issue = {184301 },
keywords = {传感器, 原位电镜},
pubstate = {published},
tppubtype = {article}
}



57.Journal Article

Ma, Jingyi; Chen, Xinyu; Sheng, Yaochen; Tong, Ling; Guo, Xiaojiao; Zhang, Minxing; Luo, Chen; Zong, Lingyi; Xia, Yin; Sheng, Chuming; Wang, Yin; Gou, Saifei; Wang, Xinyu; Wu, Xing; Zhou, Peng; Zhang, David Wei; Wu, Chenjian; Bao, Wenzhong
Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors
In: Journal of Materials Science & Technology, vol. 106, pp. 243-248, 2022, ISSN: 1005-0302 .

Links | BibTeX | 标签: 传感器 原位电镜


@article{nokey,
title = {Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors},
author = {Jingyi Ma and Xinyu Chen and Yaochen Sheng and Ling Tong and Xiaojiao Guo and Minxing Zhang and Chen Luo and Lingyi Zong and Yin Xia and Chuming Sheng and Yin Wang and Saifei Gou and Xinyu Wang and Xing Wu and Peng Zhou and David Wei Zhang and Chenjian Wu and Wenzhong Bao},
doi = {10.1016/j.jmst.2021.08.021},
issn = {1005-0302 },
year = {2022},
date = {2022-04-20},
urldate = {2022-04-20},
journal = { Journal of Materials Science & Technology},
volume = {106},
pages = {243-248},
keywords = {传感器, 原位电镜},
pubstate = {published},
tppubtype = {article}
}



58.Journal Article

Wang, Yalan; Zhang, Miao; Xue, Zhongying; Chen, Xinqian; Mei, Yongfeng; Chu, Paul K.; Tian, Ziao; Wu*, Xing; Di*, Zengfeng
Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors
In: Small, vol. 2200913, 2022.

Links | BibTeX | 标签: 传感器 原位电镜


@article{NOKEYr,
title = {Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors},
author = {Yalan Wang and Miao Zhang and Zhongying Xue and Xinqian Chen and Yongfeng Mei and Paul K. Chu and Ziao Tian and Xing Wu* and Zengfeng Di*},
doi = {10.1002/smll.202200913},
year = {2022},
date = {2022-04-11},
urldate = {2022-04-11},
journal = {Small},
volume = {2200913},
keywords = {传感器, 原位电镜},
pubstate = {published},
tppubtype = {article}
}



59.Journal Article

Liu, Xingchi; Huang, Zepeng; Ye, Changqing; Luo, Zewei; Chen, Lei; Yao, Xingye; Liang, Fang; Yang, Tao; Bi*, Hengchang; Wang, Chaolun; Cai, Chunhua; Lyu, Liangjian; Wu*, Xing
Graphene-Based Hydrogel Strain Sensors with Excellent Breathability for Motion Detection and Communication
In: Macromolecular Materials Engineering, vol. 2200001, 2022.

Links | BibTeX | 标签: 传感器 石墨烯


@article{NOKEYs,
title = {Graphene-Based Hydrogel Strain Sensors with Excellent Breathability for Motion Detection and Communication},
author = { Xingchi Liu and Zepeng Huang and Changqing Ye and Zewei Luo and Lei Chen and Xingye Yao and Fang Liang and Tao Yang and Hengchang Bi* and Chaolun Wang and Chunhua Cai and Liangjian Lyu and Xing Wu*},
doi = {10.1002/mame.202200001},
year = {2022},
date = {2022-04-09},
urldate = {2022-04-09},
journal = {Macromolecular Materials Engineering},
volume = {2200001},
keywords = {传感器, 石墨烯},
pubstate = {published},
tppubtype = {article}
}



60.Journal Article

Zhang, Zijian; Wang, Wanting; Dong, Zuoyuan; Yang, Xin; Liang, Fang; Chen, Xinqian; Wang*, Chaolun; Luo, Chen; Zhang, Jiayan; Wu*, Xing; Sun, Litao; Chu, Junhao
The Trends of In Situ Focused Ion Beam Technology: Towards Preparing Transmission Electron Microscopy Lamella and Devices at the Atomic Scale
In: Advanced Electronic Materials, 2022.

BibTeX | 标签: 原位电镜 可靠性


@article{NOKEYn,
title = {The Trends of In Situ Focused Ion Beam Technology: Towards Preparing Transmission Electron Microscopy Lamella and Devices at the Atomic Scale},
author = {Zijian Zhang and Wanting Wang and Zuoyuan Dong and Xin Yang and Fang Liang and Xinqian Chen and Chaolun Wang* and Chen Luo and Jiayan Zhang and Xing Wu* and Litao Sun and Junhao Chu},
year = {2022},
date = {2022-03-30},
urldate = {2022-03-30},
journal = {Advanced Electronic Materials},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}



61.Conference

Chen, Xinqian; Hou, Fei; Dong, Zuoyuan; Zhang, Yuxin; Wang, Chaolun; Liang, Fang; Du, Feibo; Liu, Zhiwei; Wu*, Xing
Nanoscale Analysis of Breakdown Induced Crack Propagation in DTSCR Devices
IEEE International Reliability Physics Symposium (IRPS) 2022.

BibTeX | 标签: 原位电镜 可靠性


@conference{nokey,
title = {Nanoscale Analysis of Breakdown Induced Crack Propagation in DTSCR Devices},
author = {Xinqian Chen and Fei Hou and Zuoyuan Dong and Yuxin Zhang and Chaolun Wang and Fang Liang and Feibo Du and Zhiwei Liu and Xing Wu*},
year = {2022},
date = {2022-03-27},
urldate = {2022-03-27},
organization = {IEEE International Reliability Physics Symposium (IRPS)},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {conference}
}



62.Journal Article

Gai*, Ling-Yun; Lai, Run-Ping; Dong, Xian-Hui; Wu*, Xing; Luan, Qiao-Tong; Wang, Jue; Lin, Hao-Feng; Ding, Wen-Hao; Wu, Guang-Lei; Xie*, Wan-Feng
Recent Advances in Ethanol Gas Sensors Based on Metal Oxide Semiconductor Heterojunctions
In: Rare Metals, 2022.

Links | BibTeX | 标签: 传感器


@article{nokey,
title = {Recent Advances in Ethanol Gas Sensors Based on Metal Oxide Semiconductor Heterojunctions},
author = {Ling-Yun Gai* and Run-Ping Lai and Xian-Hui Dong and Xing Wu* and Qiao-Tong Luan and Jue Wang and Hao-Feng Lin and Wen-Hao Ding and Guang-Lei Wu and Wan-Feng Xie*},
doi = {10.1007/s12598-021-01937-4},
year = {2022},
date = {2022-03-22},
urldate = {2022-03-22},
journal = {Rare Metals},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



63.Journal Article

Gai*, Ling-Yun; Lai, Run-Ping; Dong, Xian-Hui; Wu*, Xing; Luan, Qiao-Tong; Wang, Jue; Lin, Hao-Feng; Ding, Wen-Hao; Wu, Guang-Lei; Xie*, Wan-Feng
Recent Advances in Ethanol Gas sensors Based on Metal Oxide Semiconductor Heterojunctions
In: Rare Met., 2022.

Links | BibTeX


@article{NOKEYk,
title = {Recent Advances in Ethanol Gas sensors Based on Metal Oxide Semiconductor Heterojunctions},
author = {Ling-Yun Gai* and Run-Ping Lai and Xian-Hui Dong and Xing Wu* and Qiao-Tong Luan and Jue Wang and Hao-Feng Lin and Wen-Hao Ding and Guang-Lei Wu and Wan-Feng Xie*},
doi = {10.1007/s12598-021-01937-4},
year = {2022},
date = {2022-03-22},
journal = {Rare Met.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}



64.Journal Article

Yao, Xingye; Chen, Lei; Luo, Zewei; Ye, Changqing; Liang, Fang; Yang, Tao; Liu, Xingchi; Tian, Xiyue; Bi*, Hengchang; Wang, Chaolun; Cai, Chunhua; Lyu, Liangjian; Wu*, Xing
High-Performance Flexible Humidity Sensors for Breath Detection and Non-touch Switches
In: Nano Select, pp. 1-10, 2022.

Links | BibTeX | 标签: 传感器 石墨烯


@article{NOKEYm,
title = {High-Performance Flexible Humidity Sensors for Breath Detection and Non-touch Switches},
author = {Xingye Yao and Lei Chen and Zewei Luo and Changqing Ye and Fang Liang and Tao Yang and Xingchi Liu and Xiyue Tian and Hengchang Bi* and Chaolun Wang and Chunhua Cai and Liangjian Lyu and Xing Wu*},
doi = {10.1002/nano.202100343},
year = {2022},
date = {2022-03-05},
urldate = {2022-03-05},
journal = {Nano Select},
pages = {1-10},
keywords = {传感器, 石墨烯},
pubstate = {published},
tppubtype = {article}
}



65.Journal Article

Ma, Jingyi; Chen, Xinyu; Wang, Xinyu; Bian, Jihong; Tong, Ling; Chen, Honglei; Guo, Xiaojiao; Xia, Yin; Zhang, Xinzhi; Xu, Zihan; He, Congrong; Qu, Jialing; Zhou, Peng; Wu*, Chenjian; Wu*, Xing; Bao*, Wenzhong
Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors
In: ACS Applied Materials & Interfaces, 2022.

Links | BibTeX | 标签: 传感器


@article{NOKEY,
title = {Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors},
author = {Jingyi Ma and Xinyu Chen and Xinyu Wang and Jihong Bian and Ling Tong and Honglei Chen and Xiaojiao Guo and Yin Xia and Xinzhi Zhang and Zihan Xu and Congrong He and Jialing Qu and Peng Zhou and Chenjian Wu* and Xing Wu* and Wenzhong Bao*},
doi = {10.1021/acsami.1c22990},
year = {2022},
date = {2022-02-25},
urldate = {2022-02-25},
journal = {ACS Applied Materials & Interfaces},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



66.Journal Article

Lyu, LiangJian; Wang, Qingzhen; Huang, Zepeng; Wu, Xing
An In Situ Digital Background Calibration Algorithm for Multi-channel R-βR ladder DACs
In: Journal of Electronic Science and Technology, vol. 100150, 2022, ISSN: 51-1724.

Links | BibTeX | 标签: 原位电镜 芯片设计


@article{NOKEYg,
title = {An In Situ Digital Background Calibration Algorithm for Multi-channel R-βR ladder DACs},
author = {LiangJian Lyu and Qingzhen Wang and Zepeng Huang and Xing Wu},
doi = {10.1016/j.jnlest.2022.100150},
issn = {51-1724},
year = {2022},
date = {2022-01-13},
urldate = {2022-01-13},
journal = {Journal of Electronic Science and Technology},
volume = {100150},
keywords = {原位电镜, 芯片设计},
pubstate = {published},
tppubtype = {article}
}



67.Journal Article

Wu, Fan; Ren, Jie; Yang, Yi; Yan, Zhaoyi; Tian, He; Gou, Guangyang; Wang, Xuefeng; Zhang, Zijian; Yang, Xin; Wu, Xing; Ren, Tianling
A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography
In: Advanced Electronic Materials, vol. 2100543, pp. 1-7, 2021.

Links | BibTeX | 标签: 传感器 原位电镜 可靠性


@article{NOKEYe,
title = {A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography},
author = {Fan Wu and Jie Ren and Yi Yang and Zhaoyi Yan and He Tian and Guangyang Gou and Xuefeng Wang and Zijian Zhang and Xin Yang and Xing Wu and Tianling Ren},
doi = {10.1002/aelm.202100543},
year = {2021},
date = {2021-10-19},
urldate = {2021-10-19},
journal = {Advanced Electronic Materials},
volume = {2100543},
pages = {1-7},
keywords = {传感器, 原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}



68.Journal Article

Wang, Chaolun; Zou, Qiran; Cheng, Zhiheng; Chen, Jietao; Luo, Chen; Liang, Fang; Cai, Chunhua; Bi, Hengchang; Lian, Xiaocong; Ji, Xiangyang; Zhang, Qiubo; Sun, Litao; Wu, Xing
Tailoring Atomic 1T Phase CrTe2 For In Situ Fabrication
In: Nanotechnology, vol. 33, no. 8, 2021, ISSN: 0957-4484.

Links | BibTeX | 标签: 原位电镜


@article{NOKEYf,
title = {Tailoring Atomic 1T Phase CrTe2 For In Situ Fabrication},
author = {Chaolun Wang and Qiran Zou and Zhiheng Cheng and Jietao Chen and Chen Luo and Fang Liang and Chunhua Cai and Hengchang Bi and Xiaocong Lian and Xiangyang Ji and Qiubo Zhang and Litao Sun and Xing Wu},
doi = {10.1088/1361-6528/ac3a3a},
issn = {0957-4484},
year = {2021},
date = {2021-10-02},
urldate = {2021-10-02},
journal = {Nanotechnology},
volume = {33},
number = {8},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}



69.Journal Article

Tianyi Fan; Zheyu Liu; Xiyue Tian;, Junda Li; Jin Yang; Chaolun Wang; Hengchang Bi;Fei Qiao;Xing Wu; Junhao Chu
Object Identification with Smart Glove Assembled by Pressure Sensors
In: IEEE Sensors Letters, vol. 5, no. 10, pp. 5500904, 2021.

Links | BibTeX | 标签: 传感器 芯片设计    


   

@article{nokey,
title = {Object Identification with Smart Glove Assembled by Pressure Sensors},
author = {Tianyi Fan; Zheyu Liu; Xiyue Tian;, Junda Li; Jin Yang; Chaolun Wang; Hengchang Bi;Fei Qiao;Xing Wu; Junhao Chu},
doi = {10.1109/LSENS.2021.3114314},
year = {2021},
date = {2021-09-21},
urldate = {2021-09-21},
journal = {IEEE Sensors Letters},
volume = {5},
number = {10},
pages = {5500904},
keywords = {传感器, 芯片设计},
pubstate = {published},
tppubtype = {article}
}
   


   


70.Conference

Mu, Geng; Ye, Dawei; Lyu, Liangjian; Zhao, Xiaobin; Shi, C. -J. Richard
An 8-Channel Analog Front-End with a PVT-lnsensitive Switched-Capacitor and Analog Combo DC Servo Loop Achieving 300mV Tolerance and 0.64s Recovery Time to Electrode-DC Offset for Physiological Signal Recording
2021 IEEE Custom Integrated Circuits Conference (CICC), 2021, ISSN: 2152-3630.

Links | BibTeX | 标签: 芯片设计


@conference{GMuCShi21,
title = {An 8-Channel Analog Front-End with a PVT-lnsensitive Switched-Capacitor and Analog Combo DC Servo Loop Achieving 300mV Tolerance and 0.64s Recovery Time to Electrode-DC Offset for Physiological Signal Recording},
author = {Geng Mu and Dawei Ye and Liangjian Lyu and Xiaobin Zhao and C. -J. Richard Shi},
doi = {10.1109/CICC51472.2021.9431506},
issn = {2152-3630},
year = {2021},
date = {2021-04-01},
urldate = {2021-04-01},
booktitle = {2021 IEEE Custom Integrated Circuits Conference (CICC)},
pages = {1-2},
keywords = {芯片设计},
pubstate = {published},
tppubtype = {conference}
}



71.Journal Article

Chen, Xinqian; Du, Feibo; Wang, Chaolun; Xu, Hejun; Zhang, Yuxin; Hou, Fei; Yang, Xin; Wu, Yongren; Tsai, Chihang; Chen, Zhirong; Guo, Yurou; Liu, Zhiwei; Wu, Xing
Direct Visualization of Breakdown-Induced Metal Migration in Enhanced Modified Lateral Silicon-Controlled Rectifiers
In: IEEE Transactions on Electron Devices, vol. 68, no. 3, pp. 1378-1381, 2021, ISSN: 0018-9383.

Abstract | Links | BibTeX | 标签: 可靠性

The robustness of electrostatic sensitive devices is important in state-of-the-art silicon technology. However, the electrical breakdown-induced microstructure evolution remains unclear. In this work, we performed the physical failure analysis of breakdown in an enhanced modified lateral silicon-controlled rectifier-based electrostatic discharge (ESD) device. Direct visualization of the conductive metal filaments in the doped silicon substrate has been achieved by high-resolution transmission electron microscopy. The locations of these metal filaments induced by breakdown are found near the cathode. The evolution of these microstructural changes and chemical properties provides guide to the failure analysis of ESD devices.

<Go to ISI>://WOS:000622100700070

doi:10.1109/ted.2021.3053501


@article{RN169,
title = {Direct Visualization of Breakdown-Induced Metal Migration in Enhanced Modified Lateral Silicon-Controlled Rectifiers},
author = {Xinqian Chen and Feibo Du and Chaolun Wang and Hejun Xu and Yuxin Zhang and Fei Hou and Xin Yang and Yongren Wu and Chihang Tsai and Zhirong Chen and Yurou Guo and Zhiwei Liu and Xing Wu},
url = {<Go to ISI>://WOS:000622100700070},
doi = {10.1109/ted.2021.3053501},
issn = {0018-9383},
year  = {2021},
date = {2021-01-01},
urldate = {2021-01-01},
journal = {IEEE Transactions on Electron Devices},
volume = {68},
number = {3},
pages = {1378-1381},
abstract = {The robustness of electrostatic sensitive devices is important in state-of-the-art silicon technology. However, the electrical breakdown-induced microstructure evolution remains unclear. In this work, we performed the physical failure analysis of breakdown in an enhanced modified lateral silicon-controlled rectifier-based electrostatic discharge (ESD) device. Direct visualization of the conductive metal filaments in the doped silicon substrate has been achieved by high-resolution transmission electron microscopy. The locations of these metal filaments induced by breakdown are found near the cathode. The evolution of these microstructural changes and chemical properties provides guide to the failure analysis of ESD devices.},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}



72.Journal Article

Cheng, Yuan; Wu, Xing; Zhang, Zijian; Sun, Yao; Zhao, Yunshan; Zhang, Yingyan; Zhang, Gang
Thermo-Mechanical Correlation in Two-Dimensional Materials
In: Nanoscale, vol. 13, no. 3, pp. 1425-1442, 2021, ISSN: 2040-3364.

Links | BibTeX | 标签: 传感器 可靠性

<Go to ISI>://WOS:000612999200003

doi:10.1039/d0nr06824a


@article{RN170,
title = {Thermo-Mechanical Correlation in Two-Dimensional  Materials},
author = {Yuan Cheng and Xing Wu and Zijian Zhang and Yao Sun and Yunshan Zhao and Yingyan Zhang and Gang Zhang},
url = {<Go to ISI>://WOS:000612999200003},
doi = {10.1039/d0nr06824a},
issn = {2040-3364},
year  = {2021},
date = {2021-01-01},
urldate = {2021-01-01},
journal = {Nanoscale},
volume = {13},
number = {3},
pages = {1425-1442},
keywords = {传感器, 可靠性},
pubstate = {published},
tppubtype = {article}
}



73.Journal Article

Dong, Zuoyuan; Liu, Hua; Yang, Xin; Fan, Jichen; Bi, Hengchang; Wang, Chaolun; Zhang, Yonghua; Luo, Chen; Chen, Xinqian; Wu, Xing
Facile Fabrication of Paper-Based Flexible Thermoelectric Generator
In: npj Flexible Electronics, vol. 5, no. 1, 2021.

Links | BibTeX | 标签: 传感器

<Go to ISI>://WOS:000630395300001

doi:10.1038/s41528-021-00103-1


@article{RN168,
title = {Facile Fabrication of Paper-Based Flexible Thermoelectric Generator},
author = {Zuoyuan Dong and Hua Liu and Xin Yang and Jichen Fan and Hengchang Bi and Chaolun Wang and Yonghua Zhang and Chen Luo and Xinqian Chen and Xing Wu},
url = {<Go to ISI>://WOS:000630395300001},
doi = {10.1038/s41528-021-00103-1},
year  = {2021},
date = {2021-01-01},
urldate = {2021-01-01},
journal = {npj Flexible Electronics},
volume = {5},
number = {1},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



74.Journal Article

Jiang, Wei; Wang, Xudong; Chen, Yan; Wu, Shuaiqin; Wu, Binmin; Yang, Xin; Lin, Tie; Shen, Hong; Meng, Xiangjian; Wu, Xing; Chu, Junhao; Wang, Jianlu
End-Bonded Contacts of Tellurium Transistors
In: ACS Applied Materials & Interfaces, vol. 13, no. 6, pp. 7766-7772, 2021, ISSN: 1944-8244.

Links | BibTeX | 标签: 传感器

<Go to ISI>://WOS:000621051200078

doi:10.1021/acsami.0c21675


@article{RN140,
title = {End-Bonded Contacts of Tellurium Transistors},
author = {Wei Jiang and Xudong Wang and Yan Chen and Shuaiqin Wu and Binmin Wu and Xin Yang and Tie Lin and Hong Shen and Xiangjian Meng and Xing Wu and Junhao Chu and Jianlu Wang},
url = {<Go to ISI>://WOS:000621051200078},
doi = {10.1021/acsami.0c21675},
issn = {1944-8244},
year  = {2021},
date = {2021-01-01},
urldate = {2021-01-01},
journal = {ACS Applied Materials & Interfaces},
volume = {13},
number = {6},
pages = {7766-7772},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



75.Journal Article

Liang, Fang; Cai, Chunhua; Zhang, Kun; Zhang, Lili; Li, Junda; Bi, Hengchang; Wu, Peisong; Zhu, He; Wang, Chaolun; Wang, Hailu; Dong, Zuoyuan; Luo, Chen; Luo, Zewei; Shan, Chongxin; Hu, Weida; Wu, Xing
Infrared Gesture Recognition System Based on Near-Sensor Computing
In: IEEE Electron Device Letters, vol. 42, no. 7, pp. 1053-1056, 2021, ISSN: 0741-3106.

Links | BibTeX | 标签: 传感器 芯片设计

<Go to ISI>://WOS:000668843100025

doi:10.1109/led.2021.3078157


@article{RN216,
title = {Infrared Gesture Recognition System Based on Near-Sensor Computing},
author = {Fang Liang and Chunhua Cai and Kun Zhang and Lili Zhang and Junda Li and Hengchang Bi and Peisong Wu and He Zhu and Chaolun Wang and Hailu Wang and Zuoyuan Dong and Chen Luo and Zewei Luo and Chongxin Shan and Weida Hu and Xing Wu},
url = {<Go to ISI>://WOS:000668843100025},
doi = {10.1109/led.2021.3078157},
issn = {0741-3106},
year  = {2021},
date = {2021-01-01},
urldate = {2021-01-01},
journal = {IEEE Electron Device Letters},
volume = {42},
number = {7},
pages = {1053-1056},
keywords = {传感器, 芯片设计},
pubstate = {published},
tppubtype = {article}
}



76.Journal Article

Nazhamaiti, Maimaiti; Xu, Han; Liu, Zheyu; Chen, Yixuan; Wei, Qi; Wu, Xing; Qiao, Fei
NS-MD: Near-Sensor Motion Detection With Energy Harvesting Image Sensor for Always-On Visual Perception
In: IEEE Transactions on Circuits and Systems Ii-Express Briefs, vol. 68, no. 9, pp. 3078-3082, 2021, ISSN: 1549-7747./

Links | BibTeX | 标签: 传感器 芯片设计

<Go to ISI>://WOS:000692209000013

doi:10.1109/tcsii.2021.3087840


@article{RN214,
title = {NS-MD: Near-Sensor Motion Detection With Energy Harvesting Image Sensor for Always-On Visual Perception},
author = {Maimaiti Nazhamaiti and Han Xu and Zheyu Liu and Yixuan Chen and Qi Wei and Xing Wu and Fei Qiao},
url = {<Go to ISI>://WOS:000692209000013},
doi = {10.1109/tcsii.2021.3087840},
issn = {1549-7747},
year  = {2021},
date = {2021-01-01},
urldate = {2021-01-01},
journal = {IEEE Transactions on Circuits and Systems Ii-Express Briefs},
volume = {68},
number = {9},
pages = {3078-3082},
keywords = {传感器, 芯片设计},
pubstate = {published},
tppubtype = {article}
}



77.Journal Article

Wang, Chaolun; Jin, Mengge; Liu, Dongming; Liang, Fang; Luo, Chen; Li, Panlin; Cai, Chunhua; Bi, Hengchang; Wu, Xing; Di, Zengfeng
VSe2 Quantum Dots with High-Density Active Edges for Flexible Efficient Hydrogen Evolution Reaction
In: Journal of Physics D-Applied Physics, vol. 54, no. 21, 2021, ISSN: 0022-3727.

Links | BibTeX | 标签: 传感器

<Go to ISI>://WOS:000626436800001

doi:10.1088/1361-6463/abe78d


@article{RN141,
title = {Construction of Hierarchical alpha-Fe2O3/SnO2 Nanoball Arrays with Superior Acetone Sensing Performance},
author = {Peng Wang and Su-Zhen Wang and Qing Han and Dong-Qinq Zou and Wen-Kai Zhao and Xue-Dong Wang and Chen Luo and Xin Yang and Xing Wu and Wan-Feng Xie},
url = {<Go to ISI>://WOS:000601102000001},
doi = {10.1002/admi.202001831},
issn = {2196-7350},
year  = {2021},
date = {2021-01-01},
urldate = {2021-01-01},
journal = {Advanced Materials Interfaces},
volume = {8},
number = {5},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



78.Journal Article

Wang, Peng; Wang, Su-Zhen; Han, Qing; Zou, Dong-Qinq; Zhao, Wen-Kai; Wang, Xue-Dong; Luo, Chen; Yang, Xin; Wu, Xing; Xie, Wan-Feng
Construction of Hierarchical alpha-Fe2O3/SnO2 Nanoball Arrays with Superior Acetone Sensing Performance
In: Advanced Materials Interfaces, vol. 8, no. 5, 2021, ISSN: 2196-7350.

Links | BibTeX | 标签: 传感器

<Go to ISI>://WOS:000601102000001

doi:10.1002/admi.202001831


@article{RN141,
title = {Construction of Hierarchical alpha-Fe2O3/SnO2 Nanoball Arrays with Superior Acetone Sensing Performance},
author = {Peng Wang and Su-Zhen Wang and Qing Han and Dong-Qinq Zou and Wen-Kai Zhao and Xue-Dong Wang and Chen Luo and Xin Yang and Xing Wu and Wan-Feng Xie},
url = {<Go to ISI>://WOS:000601102000001},
doi = {10.1002/admi.202001831},
issn = {2196-7350},
year  = {2021},
date = {2021-01-01},
urldate = {2021-01-01},
journal = {Advanced Materials Interfaces},
volume = {8},
number = {5},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



79.Journal Article

Xiyue, Tian; Zheyu, Liu; Congwei, Guo; Jin, Yang; Jietao, Chen; Shujing, Lyu; Hengchang, Bi; Fei, Qiao; Xing, Wu; Yue, Lu
Pressure Sensor Array With Low-Power Near-Sensor CMOS Chip for Human Gait Monitoring
In: IEEE Sensors Letters, vol. 5, no. 2, pp. 6000304 (4 pp.)-6000304 (4 pp.), 2021, ISSN: 2475-1472.

Links | BibTeX | 标签: 传感器

<Go to ISI>://INSPEC:20383448

doi:10.1109/lsens.2021.3053963


@article{RN135,
title = {Pressure Sensor Array With Low-Power Near-Sensor CMOS Chip for Human Gait Monitoring},
author = {Tian Xiyue and Liu Zheyu and Guo Congwei and Yang Jin and Chen Jietao and Lyu Shujing and Bi Hengchang and Qiao Fei and Wu Xing and Lu Yue},
url = {<Go to ISI>://INSPEC:20383448},
doi = {10.1109/lsens.2021.3053963},
issn = {2475-1472},
year  = {2021},
date = {2021-01-01},
urldate = {2021-01-01},
journal = {IEEE Sensors Letters},
volume = {5},
number = {2},
pages = {6000304 (4 pp.)-6000304 (4 pp.)},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



80.Journal Article

Yang, Xin; Luo, Chen; Tian, Xiyue; Liang, Fang; Xia, Yin; Chen, Xinqian; Wang, Chaolun; Liang, Steve Xin; Wu, Xing; Chu, Junhao
A Revew of In Situ Transmission Electron Microscopy Study on the Switching Mechanism and Packaging Reliability in Non-volatile Memory
In: Journal of Semiconductors, vol. 42, no. 1, 2021, ISSN: 1674-4926, (2).

Links | BibTeX | 标签: 原位电镜 可靠性

<Go to ISI>://WOS:000620493400001

doi:10.1088/1674-4926/42/1/013102


@article{RN137,
title = {A Revew of In Situ Transmission Electron Microscopy Study on the Switching Mechanism and Packaging Reliability in Non-volatile Memory},
author = {Xin Yang and Chen Luo and Xiyue Tian and Fang Liang and Yin Xia and Xinqian Chen and Chaolun Wang and Steve Xin Liang and Xing Wu and Junhao Chu},
url = {<Go to ISI>://WOS:000620493400001},
doi = {10.1088/1674-4926/42/1/013102},
issn = {1674-4926},
year  = {2021},
date = {2021-01-01},
urldate = {2021-01-01},
journal = {Journal of Semiconductors},
volume = {42},
number = {1},
note = {2},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}



81.Journal Article

Zhou, Wenbin; He, Qian; Ye, Haifeng; Ye, Changqing; Wu, Xing; Chu, Junhao
Recent Advances in Flexible Sweat Glucose Biosensors
In: Journal of Physics D-Applied Physics, vol. 54, no. 42, 2021, ISSN: 0022-3727./

Links | BibTeX | 标签: 传感器

<Go to ISI>://WOS:000680170900001

doi:10.1088/1361-6463/ac14ef


@article{RN217,
title = {Recent Advances in Flexible Sweat Glucose Biosensors},
author = {Wenbin Zhou and Qian He and Haifeng Ye and Changqing Ye and Xing Wu and Junhao Chu},
url = {<Go to ISI>://WOS:000680170900001},
doi = {10.1088/1361-6463/ac14ef},
issn = {0022-3727},
year  = {2021},
date = {2021-01-01},
urldate = {2021-01-01},
journal = {Journal of Physics D-Applied Physics},
volume = {54},
number = {42},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



82.Conference

Tu, Yuting; Xu, Rongjin; Ye, Dawei; Lyu, Liangjian; Shi, C. -J. Richard
A 400 MHz, 8-Bit, 1.75-ps Resolution Pipelined-Two-Step Time-to-Digital Converter with Dynamic Time Amplification
2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020, ISSN: 2158-1525./

Abstract | Links | BibTeX | 标签: 芯片设计

This work proposes a high-speed pipelined-two-step time-to-digital converter (TDC) with a dynamic time amplification (DTA) to improve the resolution at low power. The key element of this TDC is the DTA. It samples the residual time errors as voltages held in the MOM capacitors and discharges them to generate the amplified time difference. Thanks to the dynamic time-voltage-time conversion, the DTA realizes high linearity and power efficiency, and can be employed to build a pipeline TDC architecture with high sampling frequency because of its sample and hold operation. Moreover, the DTA maintains constant gain, so only a one-time forground calibration for gain mismatch is required in this TDC. Simulations show that the TDC designed in 65 nm CMOS achieves 8-bit, 1.75 ps of time resolution, and 1 LSB INL and 1.6 LSB DNL with one-time foreground calibration at 400 MHz sampling frequency while just consuming 726 μW power, which corresponds to 18.45 fJ/Conv. FoM.


@conference{YTuCShi20,
title = {A 400 MHz, 8-Bit, 1.75-ps Resolution Pipelined-Two-Step Time-to-Digital Converter with Dynamic Time Amplification},
author = {Yuting Tu and Rongjin Xu and Dawei Ye and Liangjian Lyu and C. -J. Richard Shi},
doi = {10.1109/ISCAS45731.2020.9180553},
issn = {2158-1525},
year = {2020},
date = {2020-10-01},
urldate = {2020-10-01},
booktitle = {2020 IEEE International Symposium on Circuits and Systems (ISCAS)},
pages = {1-4},
abstract = {This work proposes a high-speed pipelined-two-step time-to-digital converter (TDC) with a dynamic time amplification (DTA) to improve the resolution at low power. The key element of this TDC is the DTA. It samples the residual time errors as voltages held in the MOM capacitors and discharges them to generate the amplified time difference. Thanks to the dynamic time-voltage-time conversion, the DTA realizes high linearity and power efficiency, and can be employed to build a pipeline TDC architecture with high sampling frequency because of its sample and hold operation. Moreover, the DTA maintains constant gain, so only a one-time forground calibration for gain mismatch is required in this TDC. Simulations show that the TDC designed in 65 nm CMOS achieves 8-bit, 1.75 ps of time resolution, and 1 LSB INL and 1.6 LSB DNL with one-time foreground calibration at 400 MHz sampling frequency while just consuming 726 μW power, which corresponds to 18.45 fJ/Conv. FoM.},
keywords = {芯片设计},
pubstate = {published},
tppubtype = {conference}
}



83.Conference

Xu, Rongjin; Ye, Dawei; Lyu, Liangjian; Shi, C. -J. Richard
A 2.0-2.9 GHz Digital Ring-Based Injection-Locked Clock Multiplier Using a Self-Alignment Frequency Tracking Loop for Reference Spur Reduction
2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2020, ISSN: 2375-0995.

Abstract | Links | BibTeX | 标签: 芯片设计

This paper presents a 2.0-2.9 GHz digital ring-based injection-locked clock multiplier (ILCM) in a 65 nm CMOS process. A self-alignment frequency tracking loop (SA-FTL) with background delay calibration is proposed to improve the accuracy of injection timing. Since the frequency mismatch of the free-running oscillator and the target frequency is minimized without delay error, the reference spur is reduced to -55.6 dBc, exhibiting 15.9 dB improvement comparing to the case that the SA-FTL is off. The proposed ILCM achieves 545 fs RMS jitter at 2.5 GHz output frequency with a power consumption of 3.1 mW, achieving the FoM of 240.3 dB.


@conference{RXuCShi20,
title = {A 2.0-2.9 GHz Digital Ring-Based Injection-Locked Clock Multiplier Using a Self-Alignment Frequency Tracking Loop for Reference Spur Reduction},
author = {Rongjin Xu and Dawei Ye and Liangjian Lyu and C. -J. Richard Shi},
doi = {10.1109/RFIC49505.2020.9218274},
issn = {2375-0995},
year = {2020},
date = {2020-08-01},
urldate = {2020-08-01},
booktitle = {2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)},
pages = {11-14},
abstract = {This paper presents a 2.0-2.9 GHz digital ring-based injection-locked clock multiplier (ILCM) in a 65 nm CMOS process. A self-alignment frequency tracking loop (SA-FTL) with background delay calibration is proposed to improve the accuracy of injection timing. Since the frequency mismatch of the free-running oscillator and the target frequency is minimized without delay error, the reference spur is reduced to -55.6 dBc, exhibiting 15.9 dB improvement comparing to the case that the SA-FTL is off. The proposed ILCM achieves 545 fs RMS jitter at 2.5 GHz output frequency with a power consumption of 3.1 mW, achieving the FoM of 240.3 dB.},
keywords = {芯片设计},
pubstate = {published},
tppubtype = {conference}
}



84.Journal Article

Lyu, Liangjian; Ye, Dawei; Shi, C. -J. Richard
A 340 nW/Channel 110 dB PSRR Neural Recording Analog Front-End Using Replica-Biasing LNA, Level-Shifter Assisted PGA, and Averaged LFP Servo Loop in 65 nm CMOS
In: IEEE Transactions on Biomedical Circuits and Systems, vol. 14, no. 4, pp. 811-824, 2020, ISSN: 1940-9990.

Links | BibTeX | 标签: 芯片设计


@article{LLyuCShi20a,
title = {A 340 nW/Channel 110 dB PSRR Neural Recording Analog Front-End Using Replica-Biasing LNA, Level-Shifter Assisted PGA, and Averaged LFP Servo Loop in 65 nm CMOS},
author = {Liangjian Lyu and Dawei Ye and C. -J. Richard Shi},
doi = {10.1109/TBCAS.2020.2995566},
issn = {1940-9990},
year = {2020},
date = {2020-08-01},
urldate = {2020-08-01},
journal = {IEEE Transactions on Biomedical Circuits and Systems},
volume = {14},
number = {4},
pages = {811-824},
keywords = {芯片设计},
pubstate = {published},
tppubtype = {article}
}



85.Journal Article

Lyu, Liangjian; Ye, Dawei; Xu, Rongjin; Mu, Geng; Zhao, Heng; Xiang, Yingfei; Tu, Yuting; Zhang, Yiyun; Shi, C. -J. Richard
A Fully-Integrated 64-Channel Wireless Neural Interfacing SoC Achieving 110 dB AFE PSRR and Supporting 54 Mb/s Symbol Rate, Meter-Range Wireless Data Transmission
In: IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 67, no. 5, pp. 831-835, 2020, ISSN: 1558-3791.

Links | BibTeX | 标签: 芯片设计


@article{LLyuCShi20,
title = {A Fully-Integrated 64-Channel Wireless Neural Interfacing SoC Achieving 110 dB AFE PSRR and Supporting 54 Mb/s Symbol Rate, Meter-Range Wireless Data Transmission},
author = {Liangjian Lyu and Dawei Ye and Rongjin Xu and Geng Mu and Heng Zhao and Yingfei Xiang and Yuting Tu and Yiyun Zhang and C. -J. Richard Shi},
doi = {10.1109/TCSII.2020.2982208},
issn = {1558-3791},
year = {2020},
date = {2020-05-01},
urldate = {2020-05-01},
journal = {IEEE Transactions on Circuits and Systems II: Express Briefs},
volume = {67},
number = {5},
pages = {831-835},
keywords = {芯片设计},
pubstate = {published},
tppubtype = {article}
}



86.

Ye, Dawei; Wang, Yu; Xiang, Yingfei; Lyu, Liangjian; Min, Hao; Shi, C. -J. Richard
A Wireless Power and Data Transfer Receiver Achieving 75.4% Effective Power Conversion Efficiency and Supporting 0.1% Modulation Depth for ASK Demodulation
In: IEEE Journal of Solid-State Circuits, vol. 55, no. 5, pp. 1386-1400, 2020, ISSN: 1558-173X.

Links | BibTeX | 标签: 芯片设计


@article{DYeCShi20,
title = {A Wireless Power and Data Transfer Receiver Achieving 75.4% Effective Power Conversion Efficiency and Supporting 0.1% Modulation Depth for ASK Demodulation},
author = {Dawei Ye and Yu Wang and Yingfei Xiang and Liangjian Lyu and Hao Min and C. -J. Richard Shi},
doi = {10.1109/JSSC.2019.2943871},
issn = {1558-173X},
year = {2020},
date = {2020-05-01},
urldate = {2020-05-01},
journal = {IEEE Journal of Solid-State Circuits},
volume = {55},
number = {5},
pages = {1386-1400},
keywords = {芯片设计},
pubstate = {published},
tppubtype = {article}
}



87.Journal Article

Dong, Zuo-Yuan; Peng, Ya-Kang; Yu, Hao; Li, Wei-Jian; Hu, Jia-Wei; Luo, Chen; Wu, Xing; Chen, Xiao-Jia
Role of Optical Phonons in Bulk Molybdenum Diselenide Thermal Properties Probed by Advanced Raman Spectroscopy
In: Physica Status Solidi B-Basic Solid State Physics, vol. 257, no. 9, 2020, ISSN: 0370-1972.

Links | BibTeX | 标签: 传感器 原位电镜


@article{RN173,
title = {Role of Optical Phonons in Bulk Molybdenum Diselenide Thermal Properties Probed by Advanced Raman Spectroscopy},
author = {Zuo-Yuan Dong and Ya-Kang Peng and Hao Yu and Wei-Jian Li and Jia-Wei Hu and Chen Luo and Xing Wu and Xiao-Jia Chen},
doi = {10.1002/pssb.202000251},
issn = {0370-1972},
year = {2020},
date = {2020-01-01},
urldate = {2020-01-01},
journal = {Physica Status Solidi B-Basic Solid State Physics},
volume = {257},
number = {9},
keywords = {传感器, 原位电镜},
pubstate = {published},
tppubtype = {article}
}



88.Journal Article

Liang, Fang; Wang, Chaolun; Luo, Chen; Xia, Yin; Wang, Yang; Xu, Mengjian; Wang, Hailu; Wang, Teng; Zhu, Yicheng; Wu, Peisong; Ye, Jiafu; Mu, Gang; Zhu, He; Wu, Xing
Ferromagnetic CoSe Broadband Photodetector at Room Temperature
In: Nanotechnology, vol. 31, no. 37, 2020, ISSN: 0957-4484./

Links | BibTeX | 标签: 传感器


@article{RN174,
title = {Ferromagnetic CoSe Broadband Photodetector at Room Temperature},
author = {Fang Liang and Chaolun Wang and Chen Luo and Yin Xia and Yang Wang and Mengjian Xu and Hailu Wang and Teng Wang and Yicheng Zhu and Peisong Wu and Jiafu Ye and Gang Mu and He Zhu and Xing Wu},
doi = {10.1088/1361-6528/ab9867},
issn = {0957-4484},
year = {2020},
date = {2020-01-01},
urldate = {2020-01-01},
journal = {Nanotechnology},
volume = {31},
number = {37},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



89.Journal Article

Luo, Zewei; Li, Xinming; Li, Quanling; Tian, Xiyue; Fan, Tianyi; Wang, Chaolun; Wu, Xing; Shen, Guozhen
In Situ Dynamic Manipulation of Graphene Strain Sensor with Drastically Sensing Performance Enhancement
In: Advanced Electronic Materials, vol. 6, no. 6, 2020, ISSN: 2199-160X./

Links | BibTeX | 标签: 原位电镜 石墨烯


@article{RN146,
title = {In Situ Dynamic Manipulation of Graphene Strain Sensor with Drastically Sensing Performance Enhancement},
author = {Zewei Luo and Xinming Li and Quanling Li and Xiyue Tian and Tianyi Fan and Chaolun Wang and Xing Wu and Guozhen Shen},
doi = {10.1002/aelm.202000269},
issn = {2199-160X},
year = {2020},
date = {2020-01-01},
urldate = {2020-01-01},
journal = {Advanced Electronic Materials},
volume = {6},
number = {6},
keywords = {原位电镜, 石墨烯},
pubstate = {published},
tppubtype = {article}
}



90.Journal Article

Luo, Zewei; Tian, Xiyue; Fan, Jichen; Yang, Xin; Fan, Tianyi; Wang, Chaolun; Wu, Xing; Chu, Junhao
Novel Flexible Resistive Sensors in the Age of Intelligence
In: Materials Review, vol. 34, no. 1A, pp. 1069-1079, 2020, ISSN: 1005-023X.

Links | BibTeX | 标签: 原位电镜 石墨烯

<Go to ISI>://CSCD:6704893


@article{RN147,
title = {Novel Flexible Resistive Sensors in the Age of Intelligence},
author = {Zewei Luo and Xiyue Tian and Jichen Fan and Xin Yang and Tianyi Fan and Chaolun Wang and Xing Wu and Junhao Chu},
url = {<Go to ISI>://CSCD:6704893},
issn = {1005-023X},
year  = {2020},
date = {2020-01-01},
urldate = {2020-01-01},
journal = {Materials Review},
volume = {34},
number = {1A},
pages = {1069-1079},
keywords = {原位电镜, 石墨烯},
pubstate = {published},
tppubtype = {article}
}



91.Journal Article

Ma, Zhanhong; Almalki, Abdulaziz; Yang, Xin; Wu, Xing; Xi, Xin; Li, Jing; Lin, Shan; Li, Xiaodong; Alotaibi, Saud; Huwayz, Maryam Al; Henini, Mohamed; Zhao, Lixia
The Influence of Point Defects on AlGaN-Based Deep Ultraviolet LEDs
In: Journal of Alloys and Compounds, vol. 845, 2020, ISSN: 0925-8388.

Links | BibTeX | 标签: 原位电镜 可靠性

<Go to ISI>://WOS:000566717800013

doi:10.1016/j.jallcom.2020.156177


@article{RN142,
title = {The Influence of Point Defects on AlGaN-Based Deep Ultraviolet LEDs},
author = {Zhanhong Ma and Abdulaziz Almalki and Xin Yang and Xing Wu and Xin Xi and Jing Li and Shan Lin and Xiaodong Li and Saud Alotaibi and Maryam Al Huwayz and Mohamed Henini and Lixia Zhao},
url = {<Go to ISI>://WOS:000566717800013},
doi = {10.1016/j.jallcom.2020.156177},
issn = {0925-8388},
year  = {2020},
date = {2020-01-01},
urldate = {2020-01-01},
journal = {Journal of Alloys and Compounds},
volume = {845},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}



92.Journal Article

Sun, Xingdan; Li, Wanying; Wang, Xiao; Sui, Qi; Zhang, Tongyao; Wang, Zhi; Liu, Long; Li, Da; Feng, Shun; Zhong, Siyu; Wang, Hanwen; Bouchiat, Vincent; Regueiro, Manuel Nunez; Rougemaille, Nicolas; Coraux, Johann; Purbawati, Anike; Hadj-Azzem, Abdellali; Wang, Zhenhua; Dong, Baojuan; Wu, Xing; Yang, Teng; Yu, Guoqiang; Wang, Bingwu; Han, Zheng; Han, Xiufeng; Zhang, Zhidong
Room Temperature Ferromagnetism in Ultra-Thin Van Der Waals Crystals of 1T-CrTe2
In: Nano Research, vol. 13, no. 12, pp. 3358-3363, 2020, ISSN: 1998-0124.

Links | BibTeX | 标签: 传感器

<Go to ISI>://WOS:000563729000002

doi:10.1007/s12274-020-3021-4


@article{RN171,
title = {Room Temperature Ferromagnetism in Ultra-Thin Van Der Waals Crystals of 1T-CrTe2},
author = {Xingdan Sun and Wanying Li and Xiao Wang and Qi Sui and Tongyao Zhang and Zhi Wang and Long Liu and Da Li and Shun Feng and Siyu Zhong and Hanwen Wang and Vincent Bouchiat and Manuel Nunez Regueiro and Nicolas Rougemaille and Johann Coraux and Anike Purbawati and Abdellali Hadj-Azzem and Zhenhua Wang and Baojuan Dong and Xing Wu and Teng Yang and Guoqiang Yu and Bingwu Wang and Zheng Han and Xiufeng Han and Zhidong Zhang},
url = {<Go to ISI>://WOS:000563729000002},
doi = {10.1007/s12274-020-3021-4},
issn = {1998-0124},
year  = {2020},
date = {2020-01-01},
urldate = {2020-01-01},
journal = {Nano Research},
volume = {13},
number = {12},
pages = {3358-3363},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



93.Journal Article

Wang, Chaolun; Wu, Xing; Zhang, Xuan; Mu, Gang; Li, Panlin; Luo, Chen; Xu, Hejun; Di, Zengfeng
Iron-Doped VSe2 Nanosheets for Enhanced Hydrogen Evolution Reaction
In: Applied Physics Letters, vol. 116, no. 22, 2020, ISSN: 0003-6951./

Links | BibTeX | 标签: 原位电镜


@article{RN144,
title = {Iron-Doped VSe2 Nanosheets for Enhanced Hydrogen Evolution Reaction},
author = {Chaolun Wang and Xing Wu and Xuan Zhang and Gang Mu and Panlin Li and Chen Luo and Hejun Xu and Zengfeng Di},
doi = {10.1063/5.0008092},
issn = {0003-6951},
year = {2020},
date = {2020-01-01},
urldate = {2020-01-01},
journal = {Applied Physics Letters},
volume = {116},
number = {22},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}



94.Journal Article

Xia, Yin; Wei, Lujun; Deng, Jie; Zong, Lingyi; Wang, Chaolun; Chen, Xinyu; Liang, Fang; Luo, Chen; Bao, Wenzhong; Xu, Zihan; Zhou, Jing; Pu, Yong; Wu, Xing
Tuning Electrical and Optical Properties of MoSe2 Transistors via Elemental Doping
In: Advanced Materials Technologies, vol. 5, no. 7, 2020, ISSN: 2365-709X.

Links | BibTeX | 标签: 传感器    


   

@article{RN175,
title = {Tuning Electrical and Optical Properties of MoSe2 Transistors via Elemental Doping},
author = {Yin Xia and Lujun Wei and Jie Deng and Lingyi Zong and Chaolun Wang and Xinyu Chen and Fang Liang and Chen Luo and Wenzhong Bao and Zihan Xu and Jing Zhou and Yong Pu and Xing Wu},
doi = {10.1002/admt.202000307},
issn = {2365-709X},
year = {2020},
date = {2020-01-01},
urldate = {2020-01-01},
journal = {Advanced Materials Technologies},
volume = {5},
number = {7},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}
   


   


95.Journal Article

Lyu, Liangjian; Wang, Yu; Chen, Chixiao; Shi, C. -J. Richard
A 0.6V 1.07 μW/Channel Neural Interface IC Using Level-Shifted Feedback
In: Integration, vol. 70, pp. 51-59, 2020, ISSN: 0167-9260.

Links | BibTeX | 标签: 芯片设计


@article{LLyuCShi20b,
title = {A 0.6V 1.07 μW/Channel Neural Interface IC Using Level-Shifted Feedback},
author = {Liangjian Lyu and Yu Wang and Chixiao Chen and C. -J. Richard Shi},
url = {https://www.sciencedirect.com/science/article/pii/S0167926019302974},
doi = {https://doi.org/10.1016/j.vlsi.2019.11.001},
issn = {0167-9260},
year = {2020},
date = {2020-01-01},
urldate = {2020-01-01},
journal = {Integration},
volume = {70},
pages = {51-59},
keywords = {芯片设计},
pubstate = {published},
tppubtype = {article}
}



96.Conference

Yin, Xia; Chen, Luo; Xin, Yang; Chaolun, Wang; Wenzhong, Bao; Xing, Wu
Thermal Reliability Study of Graphene-Based Planar RRAM
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) , 2020.

Links | BibTeX | 标签: 石墨烯


@conference{RN190,
title = {Thermal Reliability Study of Graphene-Based Planar RRAM},
author = {Xia Yin and Luo Chen and Yang Xin and Wang Chaolun and Bao Wenzhong and Wu Xing},
doi = {10.1109/ipfa49335.2020.9261033},
year = {2020},
date = {2020-01-01},
urldate = {2020-01-01},
booktitle = {2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) },
journal = {2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)},
pages = {4 pp.-4 pp.},
keywords = {石墨烯},
pubstate = {published},
tppubtype = {conference}
}



97.Conference

Lyu, Liangjian; Ye, Dawei; Shi, C. -J. Richard
A 340nW/Channel Neural Recording Analog Front-End using Replica-Biasing LNAs to Tolerate 200mVpp Interfere from 350mV Power Supply
2019 IEEE International Symposium on Circuits and Systems (ISCAS), 2019, ISSN: 2158-1525.

Links | BibTeX | 标签: 传感器 芯片设计


@conference{LLyuCShi19,
title = {A 340nW/Channel Neural Recording Analog Front-End using Replica-Biasing LNAs to Tolerate 200mVpp Interfere from 350mV Power Supply},
author = {Liangjian Lyu and Dawei Ye and C. -J. Richard Shi},
doi = {10.1109/ISCAS.2019.8702781},
issn = {2158-1525},
year = {2019},
date = {2019-05-01},
urldate = {2019-05-01},
booktitle = {2019 IEEE International Symposium on Circuits and Systems (ISCAS)},
pages = {1-4},
keywords = {传感器, 芯片设计},
pubstate = {published},
tppubtype = {conference}
}



98.Conference

Ye, Dawei; Xu, Rongjin; Lyu, Liangjian; Shi, C. -J. Richard
A 2.46GHz, −88dBm Sensitivity CMOS Passive Mixer-First Nonlinear Receiver with 50dB Tolerance to In-Band Interferer
2019 IEEE International Symposium on Circuits and Systems (ISCAS), 2019, ISSN: 2158-1525.

Links | BibTeX | 标签: 芯片设计


@conference{DYeCShi19,
title = {A 2.46GHz, −88dBm Sensitivity CMOS Passive Mixer-First Nonlinear Receiver with 50dB Tolerance to In-Band Interferer},
author = {Dawei Ye and Rongjin Xu and Liangjian Lyu and C. -J. Richard Shi},
doi = {10.1109/ISCAS.2019.8702464},
issn = {2158-1525},
year = {2019},
date = {2019-05-01},
urldate = {2019-05-01},
booktitle = {2019 IEEE International Symposium on Circuits and Systems (ISCAS)},
pages = {1-4},
keywords = {芯片设计},
pubstate = {published},
tppubtype = {conference}
}



99.Journal Article

Wu, F.; Li, Q.; Wang, P.; Xia, H.; Wang, Z.; Wang, Y.; Luo, M.; Chen, L.; Chen, F. S.; Miao, J. S.; Chen, X. S.; Lu, W.; Shan, C. X.; Pan, A. L.; Wu, X.; Ren, W. C.; Jariwala, D.; Hu, W. D.
High Efficiency and Fast Van Der Waals Hetero-photodiodes with A Unilateral Depletion Region
In: Nature Communications, vol. 10, 2019, ISSN: 2041-1723.

Links | BibTeX


@article{RN134,
title = {High Efficiency and Fast Van Der Waals Hetero-photodiodes with A Unilateral Depletion Region},
author = {F. Wu and Q. Li and P. Wang and H. Xia and Z. Wang and Y. Wang and M. Luo and L. Chen and F. S. Chen and J. S. Miao and X. S. Chen and W. Lu and C. X. Shan and A. L. Pan and X. Wu and W. C. Ren and D. Jariwala and W. D. Hu},
doi = {10.1038/s41467-019-12707-3},
issn = {2041-1723},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Nature Communications},
volume = {10},
keywords = {},
pubstate = {published},
tppubtype = {article}
}



100.Journal Article

Zheyu, Liu; Zichen, Fan; Qi, Wei; Xing, Wu; Fei, Qiao; Ping, Jin; Xin-jun, Liu; Chengliang, Liu; Huazhong, Yang
Design of Switched-Current Based Low-Power PIM Vision System for IoT Applications
In: 2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), pp. 181-6, 2019, (2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) 15-17 July 2019 Miami, FL, USA 0 978-1-7281-3391-1).

Links | BibTeX


@article{RN191,
title = {Design of Switched-Current Based Low-Power PIM Vision System for IoT Applications},
author = {Liu Zheyu and Fan Zichen and Wei Qi and Wu Xing and Qiao Fei and Jin Ping and Liu Xin-jun and Liu Chengliang and Yang Huazhong},
url = {<Go to ISI>://INSPEC:18993946},
doi = {10.1109/isvlsi.2019.00041},
year  = {2019},
date = {2019-01-01},
journal = {2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)},
pages = {181-6},
note = {2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) 
15-17 July 2019 
Miami, FL, USA 
0 
978-1-7281-3391-1},
keywords = {},
pubstate = {published},
tppubtype = {article}
}



101.Conference

Changlu, Liu; Tianxiang, Lan; Qin, Li; Kaige, Jia; Yidian, Fan; Xing, Wu; Fei, Qiao; Wei, Qi; Xin-Jun, Liu; Huazhong, Yang
Energy-efficient Analog Processing Architecture for Direction of Arrival with Microphone Array
2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) , 2019.

Links | BibTeX | 标签: 芯片设计


@conference{RN193,
title = {Energy-efficient Analog Processing Architecture for Direction of Arrival with Microphone Array},
author = {Liu Changlu and Lan Tianxiang and Li Qin and Jia Kaige and Fan Yidian and Wu Xing and Qiao Fei and Qi Wei and Liu Xin-Jun and Yang Huazhong},
doi = {10.1109/isvlsi.2019.00097},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
booktitle = {2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) },
journal = {2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)},
pages = {507-12},
keywords = {芯片设计},
pubstate = {published},
tppubtype = {conference}
}



102.Conference

Lyu, Liangjian; Wang, Yu; Chen, Chixiao; Shi, C. -J. Richard
A Low-Voltage Low-Power Multi-Channel Neural Interface IC Using Level-Shifted Feedback Technology
Proceedings of the 24th Asia and South Pacific Design Automation Conference, 2019, ISBN: 9781450360074.

Links | BibTeX | 标签: 传感器 芯片设计


@conference{LLyuCShi19a,
title = {A Low-Voltage Low-Power Multi-Channel Neural Interface IC Using Level-Shifted Feedback Technology},
author = {Liangjian Lyu and Yu Wang and Chixiao Chen and C. -J. Richard Shi},
doi = {10.1145/3287624.3287757},
isbn = {9781450360074},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
booktitle = {Proceedings of the 24th Asia and South Pacific Design Automation Conference},
pages = {13–14},
keywords = {传感器, 芯片设计},
pubstate = {published},
tppubtype = {conference}
}



103.Journal Article

Zhu, Ying; Ning, Hongkai; Yu, Zhihao; Pan, Qiang; Zhang, Chunchen; Luo, Chen; Tu, Xuecou; You, Yumeng; Wang, Peng; Wu, Xing; Shi, Yi; Wang, Xinran
Thickness-Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1-xO2 Thin Films through Interfacial Bound Charges
In: Advanced Electronic Materials, vol. 5, no. 8, 2019, ISSN: 2199-160X.

Links | BibTeX | 标签: 原位电镜 可靠性


@article{RN180,
title = {Thickness-Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1-xO2 Thin Films through Interfacial Bound Charges},
author = {Ying Zhu and Hongkai Ning and Zhihao Yu and Qiang Pan and Chunchen Zhang and Chen Luo and Xuecou Tu and Yumeng You and Peng Wang and Xing Wu and Yi Shi and Xinran Wang},
doi = {10.1002/aelm.201900554},
issn = {2199-160X},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Advanced Electronic Materials},
volume = {5},
number = {8},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}



104.Journal Article

Zhang, Jiayan; Yu, Ye; Wang, Peng; Luo, Chen; Wu, Xing; Sun, Ziqi; Wang, Jianlu; Hu, Wei Da; Shen, Guozhen
Characterization of Atomic Defects on the Photoluminescence in Two-Dimensional Materials Using Transmission Electron Microscope
In: Infomat, vol. 1, no. 1, pp. 85-97, 2019.

Links | BibTeX | 标签: 原位电镜


@article{RN157,
title = {Characterization of Atomic Defects on the Photoluminescence in Two-Dimensional Materials Using Transmission Electron Microscope},
author = {Jiayan Zhang and Ye Yu and Peng Wang and Chen Luo and Xing Wu and Ziqi Sun and Jianlu Wang and Wei Da Hu and Guozhen Shen},
doi = {10.1002/inf2.12002},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Infomat},
volume = {1},
number = {1},
pages = {85-97},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}



105.Journal Article

Yu, Kaihao; Xu, Tao; Wu, Xing; Wang, Wen; Zhang, Hui; Zhang, Qiubo; Tang, Luping; Sun, Litao
In Situ Observation of Crystalline Silicon Growth from SiO2 Atomic Scale
In: Research, vol. 2019, 2019.

Links | BibTeX | 标签: 原位电镜


@article{RN177,
title = {In Situ Observation of Crystalline Silicon Growth from SiO2 Atomic Scale},
author = {Kaihao Yu and Tao Xu and Xing Wu and Wen Wang and Hui Zhang and Qiubo Zhang and Luping Tang and Litao Sun},
doi = {10.34133/2019/3289247},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Research},
volume = {2019},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}



106.Journal Article

Xu, Hu; Zhang, Haima; Liu, Yawen; Zhang, Simeng; Sun, Yangye; Guo, Zhongxun; Sheng, Yaochen; Wang, Xudong; Luo, Chen; Wu, Xing; Wang, Jianlu; Hu, Weida; Xu, Zihan; Sun, Qingqing; Zhou, Peng; Shi, Jing; Sun, Zhengzong; Zhang, David Wei; Bao, Wenzhong
Controlled Doping of Wafer-Scale PtSe2 Films for Device Application
In: Advanced Functional Materials, vol. 29, no. 4, 2019, ISSN: 1616-301X.

Links | BibTeX | 标签: 原位电镜可靠性


@article{RN161,
title = {Controlled Doping of Wafer-Scale PtSe2 Films for Device Application},
author = {Hu Xu and Haima Zhang and Yawen Liu and Simeng Zhang and Yangye Sun and Zhongxun Guo and Yaochen Sheng and Xudong Wang and Chen Luo and Xing Wu and Jianlu Wang and Weida Hu and Zihan Xu and Qingqing Sun and Peng Zhou and Jing Shi and Zhengzong Sun and David Wei Zhang and Wenzhong Bao},
doi = {10.1002/adfm.201805614},
issn = {1616-301X},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Advanced Functional Materials},
volume = {29},
number = {4},
keywords = {传感器, 原位电镜},
pubstate = {published},
tppubtype = {article}
}



107.Journal Article

Xu, H.; Wu, X.; Tian, X.; Li, J.; Chu, J.; Sun, L.
Dynamic Structure-Properties Characterization and Manipulation in Advanced Nanodevices
In: Materials Today Nano, vol. 7, 2019, ISSN: 2588-8420.

Links | BibTeX | 标签: 原位电镜 可靠性


@article{RN152,
title = {Dynamic Structure-Properties Characterization and Manipulation in Advanced Nanodevices},
author = {H. Xu and X. Wu and X. Tian and J. Li and J. Chu and L. Sun},
doi = {10.1016/j.mtnano.2019.100042},
issn = {2588-8420},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Materials Today Nano},
volume = {7},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}



108.Journal Article

Wu, Feng; Xia, Hui; Sun, Haiding; Zhang, Junwei; Gong, Fan; Wang, Zhen; Chen, Long; Wang, Peng; Long, Mingsheng; Wu, Xing; Wang, Jianlu; Ren, Wencai; Chen, Xiaoshuang; Lu, Wei; Hu, Weida
AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity
In: Advanced Functional Materials, vol. 29, no. 12, 2019, ISSN: 1616-301X.

Links | BibTeX | 标签: 传感器

<Go to ISI>://WOS:000462624900024

doi:10.1002/adfm.201900314


@article{RN155,
title = {AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity},
author = {Feng Wu and Hui Xia and Haiding Sun and Junwei Zhang and Fan Gong and Zhen Wang and Long Chen and Peng Wang and Mingsheng Long and Xing Wu and Jianlu Wang and Wencai Ren and Xiaoshuang Chen and Wei Lu and Weida Hu},
url = {<Go to ISI>://WOS:000462624900024},
doi = {10.1002/adfm.201900314},
issn = {1616-301X},
year  = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Advanced Functional Materials},
volume = {29},
number = {12},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}


109.Journal Article

Bi, Hengchang; Wan, Shu; Cao, Xiehong; Wu, Xing; Zhou, Yilong; Yin, Kuibo; Su, Shi; Ma, Qinglang; Sindoro, Melinda; Zhu, Jingfang; Zhang, Zhuoran; Zhang, Hua; Sun, Litao
A General and Facile Method for Preparation of Large-Scale Reduced Graphene Oxide Films with Controlled Structures
In: Carbon, vol. 143, pp. 162-171, 2019, ISSN: 0008-6223.

Links | BibTeX | 标签: 传感器 石墨烯

<Go to ISI>://WOS:000456710500018

doi:10.1016/j.carbon.2018.11.007


@article{RN162,
title = {VSe2/Carbon-Nanotube Compound for All Solid-State Flexible In-Plane Supercapacitor},
author = {Chaolun Wang and Xing Wu and Hejun Xu and Yujin Zhu and Fang Liang and Chen Luo and Yin Xia and Xinying Xie and Jian Zhang and Chungang Duan},
doi = {10.1063/1.5078555},
issn = {0003-6951},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Applied Physics Letters},
volume = {114},
number = {2},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



110.Journal Article

Wang, Chaolun; Wu, Xing; Xu, Hejun; Zhu, Yujin; Liang, Fang; Luo, Chen; Xia, Yin; Xie, Xinying; Zhang, Jian; Duan, Chungang
VSe2/Carbon-Nanotube Compound for All Solid-State Flexible In-Plane Supercapacitor
In: Applied Physics Letters, vol. 114, no. 2, 2019, ISSN: 0003-6951.

Links | BibTeX | 标签: 传感器


@article{RN162,
title = {VSe2/Carbon-Nanotube Compound for All Solid-State Flexible In-Plane Supercapacitor},
author = {Chaolun Wang and Xing Wu and Hejun Xu and Yujin Zhu and Fang Liang and Chen Luo and Yin Xia and Xinying Xie and Jian Zhang and Chungang Duan},
doi = {10.1063/1.5078555},
issn = {0003-6951},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Applied Physics Letters},
volume = {114},
number = {2},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



111.Journal Article

Tian, Xiyue; Liu, Zheyu; Luo, Zewei; Wu, Xing; Qiao, Fei; Wang, Xuewen; Li, Guihong; Wu, Jing; Zhang, Jian; Liu, Zheng; Chu, Junhao
Dual-Mode Sensor and Actuator to Learn Human-Hand Tracking and Grasping
In: IEEE Transactions on Electron Devices, vol. 66, no. 12, pp. 5407-5410, 2019, ISSN: 0018-9383.

Links | BibTeX | 标签: 传感器


@article{RN149,
title = {Dual-Mode Sensor and Actuator to Learn Human-Hand Tracking and Grasping},
author = {Xiyue Tian and Zheyu Liu and Zewei Luo and Xing Wu and Fei Qiao and Xuewen Wang and Guihong Li and Jing Wu and Jian Zhang and Zheng Liu and Junhao Chu},
doi = {10.1109/ted.2019.2949583},
issn = {0018-9383},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {IEEE Transactions on Electron Devices},
volume = {66},
number = {12},
pages = {5407-5410},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



112.Journal Article

Luo, Zewei; Hu, Xiaotong; Tian, Xiyue; Luo, Chen; Xu, Hejun; Li, Quanling; Li, Qianhao; Zhang, Jian; Qiao, Fei; Wu, Xing; Borisenko, V. E.; Chu, Junhao
Structure-Property Relationships in Graphene-Based Strain and Pressure Sensors for Potential Artificial Intelligence Applications
In: Sensors, vol. 19, no. 5, 2019.

Links | BibTeX | 标签: 传感器 原位电镜 石墨烯


@article{RN158,
title = {Structure-Property Relationships in Graphene-Based Strain and Pressure Sensors for Potential Artificial Intelligence Applications},
author = {Zewei Luo and Xiaotong Hu and Xiyue Tian and Chen Luo and Hejun Xu and Quanling Li and Qianhao Li and Jian Zhang and Fei Qiao and Xing Wu and V. E. Borisenko and Junhao Chu},
doi = {10.3390/s19051250},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Sensors},
volume = {19},
number = {5},
keywords = {传感器, 原位电镜, 石墨烯},
pubstate = {published},
tppubtype = {article}
}



113.Journal Article

Luo, Chen; Yu, Kaihao; Wu, Xing; Sun, Litao
In Situ Interfacial Manipulation of Metastable States Between Nucleation and Decomposition of Single Bismuth Nanoparticle
In: Physica Status Solidi B-Basic Solid State Physics, vol. 256, no. 3, 2019, ISSN: 0370-1972.

Links | BibTeX | 标签: 原位电镜


@article{RN156,
title = {In Situ Interfacial Manipulation of Metastable States Between Nucleation and Decomposition of Single Bismuth Nanoparticle},
author = {Chen Luo and Kaihao Yu and Xing Wu and Litao Sun},
doi = {10.1002/pssb.201800442},
issn = {0370-1972},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Physica Status Solidi B-Basic Solid State Physics},
volume = {256},
number = {3},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}



114.Journal Article

Long, Mingsheng; Wang, Yang; Wang, Peng; Zhou, Xiaohao; Xia, Hui; Luo, Chen; Huang, Shenyang; Zhang, Guowei; Yan, Hugen; Fan, Zhiyong; Wu, Xing; Chen, Xiaoshuang; Lu, Wei; Hu, Weida
Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability
In: ACS Nano, vol. 13, no. 2, pp. 2511-2519, 2019, ISSN: 1936-0851.

Links | BibTeX


@article{RN159,
title = {Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability},
author = {Mingsheng Long and Yang Wang and Peng Wang and Xiaohao Zhou and Hui Xia and Chen Luo and Shenyang Huang and Guowei Zhang and Hugen Yan and Zhiyong Fan and Xing Wu and Xiaoshuang Chen and Wei Lu and Weida Hu},
doi = {10.1021/acsnano.8b09476},
issn = {1936-0851},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {ACS Nano},
volume = {13},
number = {2},
pages = {2511-2519},
keywords = {},
pubstate = {published},
tppubtype = {article}
}



115.Journal Article

Liang, Fang; Xu, Hejun; Dong, Zuoyuan; Xie, Yafeng; Luo, Chen; Xia, Yin; Zhang, Jian; Wang, Jun; Wu, Xing
Substrates and Interlayer Coupling Effects on Mo1-xWxSe2 Alloys
In: Journal of Semiconductors, vol. 40, no. 6, 2019, ISSN: 1674-4926.

Links | BibTeX | 标签:    


   

@article{RN154,
title = {Substrates and Interlayer Coupling Effects on Mo1-xWxSe2 Alloys},
author = {Fang Liang and Hejun Xu and Zuoyuan Dong and Yafeng Xie and Chen Luo and Yin Xia and Jian Zhang and Jun Wang and Xing Wu},
doi = {10.1088/1674-4926/40/6/062005},
issn = {1674-4926},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Journal of Semiconductors},
volume = {40},
number = {6},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
   


   


116.Journal Article

Li, Quanling; Zhang, Jiayan; Li, Qianhao; Li, Guihong; Tian, Xiyue; Luo, Zewei; Qiao, Fei; Wu, Xing; Zhang, Jian
Review of Printed Electrodes for Flexible Devices
In: Frontiers in Materials, vol. 5, 2019, ISSN: 2296-8016.

Links | BibTeX | 标签: 传感器


@article{RN160,
title = {Review of Printed Electrodes for Flexible Devices},
author = {Quanling Li and Jiayan Zhang and Qianhao Li and Guihong Li and Xiyue Tian and Zewei Luo and Fei Qiao and Xing Wu and Jian Zhang},
doi = {10.3389/fmats.2018.00077},
issn = {2296-8016},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Frontiers in Materials},
volume = {5},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}



117.Journal Article

Lanza, Mario; Wong, H. S. Philip; Pop, Eric; Ielmini, Daniele; Strukov, Dimitri; Regan, Brian C.; Larcher, Luca; Villena, Marco A.; Yang, J. Joshua; Goux, Ludovic; Belmonte, Attilio; Yang, Yuchao; Puglisi, Francesco M.; Kang, Jinfeng; Magyari-Kope, Blanka; Yalon, Eilam; Kenyon, Anthony; Buckwell, Mark; Mehonic, Adnan; Shluger, Alexander; Li, Haitong; Hou, Tuo-Hung; Hudec, Boris; Akinwande, Deji; Ge, Ruijing; Ambrogio, Stefano; Roldan, Juan B.; Miranda, Enrique; Sune, Jordi; Pey, Kin Leong; Wu, Xing; Raghavan, Nagarajan; Wu, Ernest; Lu, Wei D.; Navarro, Gabriele; Zhang, Weidong; Wu, Huaqiang; Li, Runwei; Holleitner, Alexander; Wurstbauer, Ursula; Lemme, Max C.; Liu, Ming; Long, Shibing; Liu, Qi; Lv, Hangbing; Padovani, Andrea; Pavan, Paolo; Valov, Ilia; Jing, Xu; Han, Tingting; Zhu, Kaichen; Chen, Shaochuan; Hui, Fei; Shi, Yuanyuan
Recommended Methods to Study Resistive Switching Devices
In: Advanced Electronic Materials, vol. 5, no. 1, 2019, ISSN: 2199-160X.

Links | BibTeX | 标签: 原位电镜 可靠性


@article{RN183,
title = {Recommended Methods to Study Resistive Switching Devices},
author = {Mario Lanza and H. S. Philip Wong and Eric Pop and Daniele Ielmini and Dimitri Strukov and Brian C. Regan and Luca Larcher and Marco A. Villena and J. Joshua Yang and Ludovic Goux and Attilio Belmonte and Yuchao Yang and Francesco M. Puglisi and Jinfeng Kang and Blanka Magyari-Kope and Eilam Yalon and Anthony Kenyon and Mark Buckwell and Adnan Mehonic and Alexander Shluger and Haitong Li and Tuo-Hung Hou and Boris Hudec and Deji Akinwande and Ruijing Ge and Stefano Ambrogio and Juan B. Roldan and Enrique Miranda and Jordi Sune and Kin Leong Pey and Xing Wu and Nagarajan Raghavan and Ernest Wu and Wei D. Lu and Gabriele Navarro and Weidong Zhang and Huaqiang Wu and Runwei Li and Alexander Holleitner and Ursula Wurstbauer and Max C. Lemme and Ming Liu and Shibing Long and Qi Liu and Hangbing Lv and Andrea Padovani and Paolo Pavan and Ilia Valov and Xu Jing and Tingting Han and Kaichen Zhu and Shaochuan Chen and Fei Hui and Yuanyuan Shi},
doi = {10.1002/aelm.201800143},
issn = {2199-160X},
year  = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Advanced Electronic Materials},
volume = {5},
number = {1},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}



118.Journal Article

Dong, Zuoyuan; Xu, Hejun; Liang, Fang; Luo, Chen; Wang, Chaolun; Cao, Zi-Yu; Chen, Xiao-Jia; Zhang, Jian; Wu, Xing
Raman Characterization on Two-Dimensional Materials-Based Thermoelectricity
In: Molecules, vol. 24, no. 1, 2019.

Links | BibTeX


@article{RN179,
title = {Raman Characterization on Two-Dimensional Materials-Based Thermoelectricity},
author = {Zuoyuan Dong and Hejun Xu and Fang Liang and Chen Luo and Chaolun Wang and Zi-Yu Cao and Xiao-Jia Chen and Jian Zhang and Xing Wu},
doi = {10.3390/molecules24010088},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Molecules},
volume = {24},
number = {1},
keywords = {},
pubstate = {published},
tppubtype = {article}
}



119.Journal Article

Dong, Hui; Xu, Feng; Sun, Ziqi; Wu, Xing; Zhang, Qiubo; Zhai, Yusheng; Tan, Xiao Dong; He, Longbing; Xu, Tao; Zhang, Ze; Duan, Xiangfeng; Sun, Litao
In Situ Interface Engineering for Probing the Limit of Quantum Dot Photovoltaic Devices
In: Nature Nanotechnology, vol. 14, no. 10, pp. 950-+, 2019, ISSN: 1748-3387.

Links | BibTeX | 标签: 原位电镜


@article{RN138,
title = {In Situ Interface Engineering for Probing the Limit of Quantum Dot Photovoltaic Devices},
author = {Hui Dong and Feng Xu and Ziqi Sun and Xing Wu and Qiubo Zhang and Yusheng Zhai and Xiao Dong Tan and Longbing He and Tao Xu and Ze Zhang and Xiangfeng Duan and Litao Sun},
doi = {10.1038/s41565-019-0526-7},
issn = {1748-3387},
year = {2019},
date = {2019-01-01},
urldate = {2019-01-01},
journal = {Nature Nanotechnology},
volume = {14},
number = {10},
pages = {950-+},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}



120.Conference

Xing Wu Xiyue Tian, Xuewen Wang; Chu, Junhao
Flexible Artificial Sensory Nerve With Multiple External Stimuli Reflection and Interaction Based on Graphene Heterosturcture Array
NCFE, Nature Conference on Flexible Electronics-Visions of a Flexible Future, 2018.

BibTeX | 标签: 传感器 石墨烯


@conference{nokey,
title = {Flexible Artificial Sensory Nerve With Multiple External Stimuli Reflection and Interaction Based on Graphene Heterosturcture Array},
author = {Xiyue Tian, Xing Wu, Xuewen Wang, Zheyu Liu, Fei Qiao, Guihong Li, Zewei Luo, Jing Wu, Shanbiao Liu, Quanling Li, Jian Zhang, and Junhao Chu},
year = {2018},
date = {2018-10-12},
urldate = {2018-10-12},
booktitle = {NCFE, Nature Conference on Flexible Electronics-Visions of a Flexible Future},
keywords = {传感器, 石墨烯},
pubstate = {published},
tppubtype = {conference}
}



121.Conference

Wang, Yu; Ye, Dawei; Lyu, Liangjian; Xiang, Yingfei; Min, Hao; Shi, C. -J. Richard
A 13.56MHz Wireless Power and Data Transfer Receiver Achieving 75.4% Effective-Power-Conversion Efficiency with 0.1% ASK Modulation Depth and 9.2mW Output Power
2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, ISSN: 2376-8606.

Links | BibTeX | 标签: 芯片设计


   

@conference{YWangCShi18,
title = {A 13.56MHz Wireless Power and Data Transfer Receiver Achieving 75.4% Effective-Power-Conversion Efficiency with 0.1% ASK Modulation Depth and 9.2mW Output Power},
author = {Yu Wang and Dawei Ye and Liangjian Lyu and Yingfei Xiang and Hao Min and C. -J. Richard Shi},
doi = {10.1109/ISSCC.2018.8310224},
issn = {2376-8606},
year = {2018},
date = {2018-02-01},
urldate = {2018-02-01},
booktitle = {2018 IEEE International Solid - State Circuits Conference - (ISSCC)},
pages = {142-144},
keywords = {芯片设计},
pubstate = {published},
tppubtype = {conference}
}
   


   

122.Journal Article

Chen, Xiaoqiu; Wang, Qing; Wu, Xin; Wang, Tao; Tang, Yanxue; Duan, Zhihua; Sun, Dazhi; Zhao, Xiangyong; Wang, Feifei; Shi, Wangzhou
Piezoelectric/Photoluminescence Effect in One-Dimensional Lead-Free Nanofibers
In: Scripta Materialia, vol. 145, pp. 81-84, 2018, ISSN: 1359-6462.

Links | BibTeX


   

@article{RN186,
title = {Piezoelectric/Photoluminescence Effect in One-Dimensional Lead-Free Nanofibers},
author = {Xiaoqiu Chen and Qing Wang and Xin Wu and Tao Wang and Yanxue Tang and Zhihua Duan and Dazhi Sun and Xiangyong Zhao and Feifei Wang and Wangzhou Shi},
doi = {10.1016/j.scriptamat.2017.10.018},
issn = {1359-6462},
year = {2018},
date = {2018-01-01},
urldate = {2018-01-01},
journal = {Scripta Materialia},
volume = {145},
pages = {81-84},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
   


   

123.Journal Article

Dong, Hui; Xu, Tao; Sun, Ziqi; Zhang, Qiubo; Wu, Xing; He, Longbing; Xu, Feng; Sun, Litao
Simultaneous Atomic-Level Visualization and High Precision Photocurrent Measurements on Photoelectric Devices by In Situ TEM
In: RSC Advances, vol. 8, no. 2, pp. 948-953, 2018, ISSN: 2046-2069.

Links | BibTeX | 标签: 原位电镜


   

@article{RN88,
title = {Simultaneous Atomic-Level Visualization and High Precision Photocurrent Measurements on Photoelectric Devices by In Situ TEM},
author = {Hui Dong and Tao Xu and Ziqi Sun and Qiubo Zhang and Xing Wu and Longbing He and Feng Xu and Litao Sun},
doi = {10.1039/c7ra10696c},
issn = {2046-2069},
year = {2018},
date = {2018-01-01},
urldate = {2018-01-01},
journal = {RSC Advances},
volume = {8},
number = {2},
pages = {948-953},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}
   


   


124.Journal Article

Liang, Fang; Xu, Hejun; Wu, Xing; Wang, Chaolun; Luo, Chen; Zhang, Jian
Raman Spectroscopy Characterization of Two-Dimensional Materials
In: Chinese Physics B, vol. 27, no. 3, 2018, ISSN: 1674-1056.

Links | BibTeX


   

@article{RN166,
title = {Raman Spectroscopy Characterization of Two-Dimensional Materials},
author = {Fang Liang and Hejun Xu and Xing Wu and Chaolun Wang and Chen Luo and Jian Zhang},
doi = {10.1088/1674-1056/27/3/037802},
issn = {1674-1056},
year = {2018},
date = {2018-01-01},
urldate = {2018-01-01},
journal = {Chinese Physics B},
volume = {27},
number = {3},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
   


   

125.Journal Article

Wang, Chaolun; Wu, Xing; Ma, Yonghui; Mu, Gang; Li, Yaoyi; Luo, Chen; Xu, Hejun; Zhang, Yuanyuan; Yang, Jing; Tang, Xiaodong; Zhang, Jian; Bao, Wenzhong; Duan, Chungang
Metallic few-layered VSe2 Nanosheets: High Two-Dimensional Conductivity for Flexible In-Plane Solid-State Supercapacitors
In: Journal of Materials Chemistry A, vol. 6, no. 18, pp. 8299-8306, 2018, ISSN: 2050-7488.

Links | BibTeX | 标签: 传感器


   

@article{RN164,
title = {Metallic few-layered VSe2 Nanosheets: High Two-Dimensional Conductivity for Flexible In-Plane Solid-State Supercapacitors},
author = {Chaolun Wang and Xing Wu and Yonghui Ma and Gang Mu and Yaoyi Li and Chen Luo and Hejun Xu and Yuanyuan Zhang and Jing Yang and Xiaodong Tang and Jian Zhang and Wenzhong Bao and Chungang Duan},
doi = {10.1039/c8ta00089a},
issn = {2050-7488},
year = {2018},
date = {2018-01-01},
urldate = {2018-01-01},
journal = {Journal of Materials Chemistry A},
volume = {6},
number = {18},
pages = {8299-8306},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}
   


   

126.Journal Article

Wu, Xing; Yu, Kaihao; Cha, Dongkyu; Bosman, Michel; Raghavan, Nagarajan; Zhang, Xixiang; Li, Kun; Liu, Qi; Sun, Litao; Pey, Kinleong
Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects
In: Advanced Science, vol. 5, no. 6, 2018.

Links | BibTeX | 标签: 原位电镜 可靠性


@article{RN184,
title = {Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects},
author = {Xing Wu and Kaihao Yu and Dongkyu Cha and Michel Bosman and Nagarajan Raghavan and Xixiang Zhang and Kun Li and Qi Liu and Litao Sun and Kinleong Pey},
doi = {10.1002/advs.201800096},
year = {2018},
date = {2018-01-01},
urldate = {2018-01-01},
journal = {Advanced Science},
volume = {5},
number = {6},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}



127.Journal Article

Xu, Hejun; Wu, Xing; Li, Xinming; Luo, Chen; Liang, Fang; Orignac, Edmond; Zhang, Jian; Chu, Junhao
Properties of Graphene-Metal Contacts Probed by Raman Spectroscopy
In: Carbon, vol. 127, pp. 491-497, 2018, ISSN: 0008-6223.

Links | BibTeX | 标签: 石墨烯


@article{RN84,
title = {Properties of Graphene-Metal Contacts Probed by Raman Spectroscopy},
author = {Hejun Xu and Xing Wu and Xinming Li and Chen Luo and Fang Liang and Edmond Orignac and Jian Zhang and Junhao Chu},
doi = {10.1016/j.carbon.2017.11.035},
issn = {0008-6223},
year = {2018},
date = {2018-01-01},
urldate = {2018-01-01},
journal = {Carbon},
volume = {127},
pages = {491-497},
keywords = {石墨烯},
pubstate = {published},
tppubtype = {article}
}



128.Journal Article

Xu, Hu; Zhang, Haima; Guo, Zhongxun; Shan, Yuwei; Wu, Shiwei; Wang, Jianlu; Hu, Weida; Liu, Hanqi; Sun, Zhengzong; Luo, Chen; Wu, Xing; Xu, Zihan; Zhang, David Wei; Bao, Wenzhong; Zhou, Peng
High-Performance Wafer-Scale MoS2 Transistors toward Practical Application
In: Small, vol. 14, no. 48, 2018, ISSN: 1613-6810.

Links | BibTeX | 标签: 可靠性


@article{RN163,
title = {High-Performance Wafer-Scale MoS2 Transistors toward Practical Application},
author = {Hu Xu and Haima Zhang and Zhongxun Guo and Yuwei Shan and Shiwei Wu and Jianlu Wang and Weida Hu and Hanqi Liu and Zhengzong Sun and Chen Luo and Xing Wu and Zihan Xu and David Wei Zhang and Wenzhong Bao and Peng Zhou},
doi = {10.1002/smll.201803465},
issn = {1613-6810},
year = {2018},
date = {2018-01-01},
urldate = {2018-01-01},
journal = {Small},
volume = {14},
number = {48},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}


129.Journal Article

Yu, Kaihao; Zhao, Wen; Wu, Xing; Zhuang, Jianing; Hu, Xiaohui; Zhang, Qiubo; Sun, Jun; Xu, Tao; Chai, Yang; Ding, Feng; Sun, Litao
In Situ Atomic-Scale Observation of Monolayer Graphene Growth From SiC
In: Nano Research, vol. 11, no. 5, pp. 2809-2820, 2018, ISSN: 1998-0124.al, vol. 10, no. 1, 2018, ISSN: 1943-0655.

Links | BibTeX | 标签: 原位电镜 石墨烯


@article{RN165,
title = {In Situ Atomic-Scale Observation of Monolayer Graphene Growth From SiC},
author = {Kaihao Yu and Wen Zhao and Xing Wu and Jianing Zhuang and Xiaohui Hu and Qiubo Zhang and Jun Sun and Tao Xu and Yang Chai and Feng Ding and Litao Sun},
doi = {10.1007/s12274-017-1911-x},
issn = {1998-0124},
year = {2018},
date = {2018-01-01},
urldate = {2018-01-01},
journal = {Nano Research},
volume = {11},
number = {5},
pages = {2809-2820},
keywords = {原位电镜, 石墨烯},
pubstate = {published},
tppubtype = {article}
}


130.Journal Article

Zhang, Hanyu; Zhou, Linjie; Rahman, B. M. A.; Wu, Xing; Lu, Liangjun; Xu, Youhua; Xu, Jian; Song, Junchao; Hu, Zhigao; Xu, Liping; Chen, Jianping
Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation
In: IEEE Photonics Journal, vol. 10, no. 1, 2018, ISSN: 1943-0655.

Links | BibTeX


@article{RN185,
title = {Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation},
author = {Hanyu Zhang and Linjie Zhou and B. M. A. Rahman and Xing Wu and Liangjun Lu and Youhua Xu and Jian Xu and Junchao Song and Zhigao Hu and Liping Xu and Jianping Chen},
doi = {10.1109/jphot.2017.2781710},
issn = {1943-0655},
year = {2018},
date = {2018-01-01},
urldate = {2018-01-01},
journal = {IEEE Photonics Journal},
volume = {10},
number = {1},
keywords = {},
pubstate = {published},
tppubtype = {article}
}



131.Journal Article

Zheng, Dingshan; Fang, Hehai; Long, Mingsheng; Wu, Feng; Wang, Peng; Gong, Fan; Wu, Xing; Ho, Johnny C.; Liao, Lei; Hu, Weida
High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition
In: ACS Nano, vol. 12, no. 7, pp. 7239-7245, 2018, ISSN: 1936-0851.

Links | BibTeX


@article{RN113,
title = {High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition},
author = {Dingshan Zheng and Hehai Fang and Mingsheng Long and Feng Wu and Peng Wang and Fan Gong and Xing Wu and Johnny C. Ho and Lei Liao and Weida Hu},
doi = {10.1021/acsnano.8b03291},
issn = {1936-0851},
year = {2018},
date = {2018-01-01},
urldate = {2018-01-01},
journal = {ACS Nano},
volume = {12},
number = {7},
pages = {7239-7245},
keywords = {},
pubstate = {published},
tppubtype = {article}
}



132.Journal Article

Yu J J, Deng H M, Tao J H, Chen L L, Cao H Y, Sun L, Yang P X, Chu J H
Synthesis of Cu2MnSnS4 thin film deposited on seeded fluorine doped tin oxide substrate via a green and low-cost electrodeposition method
Materials Letters, 2017, 191: 186-188.

| 标签: 传感器

133.Journal Article

Yao Q F, Cai J, Tong W Y, Gong S J, Wang J Q, Wan X G, Duan C G, Chu J H
Manipulation of the large Rashba spin splitting in polar two-dimensional transition-metal dichalcogenides
Physical Review B, 2017, 95: 165401.

| 标签: 传感器

134.Journal Article

Xue S, Zhao X L, Wang J L, Tian B B, Huang H, Meng C M, Liu L, Ye L, Sun J L, Meng X J, Zhang X D, Chu J H
Preparation of La0.67Ca0.23Sr0.1MnO3 thin films with interesting electrical and magnetic properties via pulsed-laser deposition
Science China-Physics Mechanics & Astronomy, 2017, 60: 027521.

| 标签: 传感器

135.Conference

Wu J, Huang Z, Jiang L, Gao Y, Zhou W, Chu J H
2017 Flexible thermistors: MCNO films with low resistivity and high TCR deposited on flexible organic sheets by RF magnetron sputtering
the Infrared Remote Sensing and Instrumentation Xxv, San Diego, California, United States, Aug 07-08, 2017.

| 标签: 传感器

136.Journal Article

Wang X D, Liu C S, Chen Y, Wu G J, Yan X, Huang H, Wang P, Tian B B, Hong Z C, Wang Y T, Sun S, Shen H, Lin T, Hu W D, Tang M H, Zhou P, Wang J, Sun J J, Meng X J, Chu J H, Li Z
Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels
2d Materials, 2017, 4: 025036.

| 标签: 传感器

137.Journal Article

Wang X, Wang L, Fu X H, Jing C B, Yue F Y, Yang P X, Chu J H
Thermal behaviors of stainless steel tube based GeO2 ATR hollow fibers for transmitting CO2 laser radiations
Optics and Laser Technology, 2017, 95: 42-45.

| 标签: 传感器

138.Journal Article

Wang T T, Deng H M, Zhou W L, Yang P X, Chu J H
Structural, ferromagnetic and optical properties of pure bismuth A-site polar perovskite Bi(Mg3/8Fe2/8Ti3/8)O-3 synthesized at ambient pressure
Journal of Materials Science-Materials in Electronics, 2017, 28: 934-938.

| 标签: 传感器

139.Journal Article

Wang T T, Deng H M, Zhou W L, Meng X K, Yang P X, Chu J H
Modified optical and magnetic properties at room-temperature across lead-free morphotropic phase boundary in (1-x)BiTi3/8Fe2/8Mg3/8O3-xCaTiO3
Ceramics International, 2017, 43: 6453-6459.

| 标签: 传感器

140.Journal Article

Wang T T, Deng H M, Shen P, Hong J, Yue F Y, Zhu L Q, Yang P X, Chu J H
The synthesis and microstructural, optical, magnetic characterizations of m 0 0-oriented epitaxial Bi2Fe4O9 thin film by pulsed laser deposition
Materials Letters, 2017, 204: 81-84.

| 标签: 传感器

141.Journal Article

Wang T T, Deng H M, Cao H Y, Zhou W L, Weng G E, Chen S Q, Yang P X, Chu J H
Structural, optical and magnetic modulation in Mn and Mg co-doped BiFeO3 films grown on Si substrates
Materials Letters, 2017, 199: 116-119.

| 标签: 传感器

142.Journal Article

Wang T, Deng H, Meng X, Cao H, Zhou W, Shen P, Zhang Y, Yang P, Chu J H
Tunable polarization and magnetization at room-temperature in narrow bandgap Aurivillius Bi6Fe2-xCox/2Nix/2Ti3O18
Ceramics International, 2017, 43: 8792-8799.

| 标签: 传感器

143.Journal Article

Wang L, Wang X, Fu X H, Sun Z H, Jing C B, Lu X H, Yang P X, Chu J H
Study on light-capture performance of silicon thin-film hollow waveguide solar cells
Optical and Quantum Electronics, 2017, 49: 369.

| 标签: 传感器

144.Journal Article

Wang J Y, Zhang P, Deng Q L, Jiang K, Zhang J Z, Hu Z G, Chu J H
Electronic transitions of the transparent delafossite-type CuGa1-xCrxO2 system: first-principles calculations and temperature-dependent spectral experiments
Journal of Materials Chemistry C, 2017, 5: 183-191.

| 标签: 传感器

145.Journal Article

Wang J, Deng Q, Li M, Jiang K, Zhang J, Hu Z, Chu J H
Copper ferrites@reduced graphene oxide anode materials for advanced lithium storage applications
Sci Rep, 2017, 7: 8903.

| 标签: 传感器

146.Journal Article

Wang H, Hong J, Yue F, Jing C, Chu J H
Optical homogeneity analysis of Hg1-xCdxTe epitaxial layers: How to circumvent the influence of impurity absorption bands?
Infrared Physics & Technology, 2017, 82: 1-7.

| 标签: 传感器

147.Journal Article

Wang F, Wang J, Guo S, Zhang J, Hu Z, Chu J H
Tuning Coupling Behavior of Stacked Heterostructures Based on MoS2, WS2, and WSe2
Scientific Reports, 2017, 7: 44712

| 标签: 传感器

148.Journal Article

Tian B, Nukala P, Hassine M B, Zhao X, Wang X, Shen H, Wang J, Sun S, Lin T, Sun J, Ge J, Huang R, Duan C, Reiss T, Varela M, Dkhil B, Meng X, Chu J H
Interfacial memristors in Al-LaNiO3 heterostructures
Phys Chem Chem Phys, 2017, 19: 16960-16968.

| 标签: 传感器

149.Journal Article

Sun Y B, Xu W L, Fu X H, Sun Z H, Wang J Y, Zhang J Z, Rosenbach D, Qi R J, Jiang K, Jing C B, Hu Z G, Ma X M, Chu J H
Evaluation of lattice dynamics, infrared optical properties and visible emissions of hexagonal GeO2 films prepared by liquid phase deposition
Journal of Materials Chemistry C, 2017, 5: 12792-12799.

| 标签: 传感器

150.Journal Article

Sun L, Ma J H, Yao N J, Huang Z M, Chu J H
Influence of various Cu contents on the microstructure of Cu( In, Ga)Se-2 thin films
Journal of Infrared and Millimeter Waves, 2017, 36: 1.

| 标签: 传感器

151.Journal Article

Sun L, Fang Y W, He J, Zhang Y Y, Qi R J, He Q, Huang R, Xiang P H, Tang X D, Yang P X, Chu J H, Chu Y H, Duan C G
The preparation, and structural and multiferroic properties of B-site ordered double-perovskite Bi2FeMnO6
Journal of Materials Chemistry C, 2017, 5: 5494-5500.

| 标签: 传感器

152.Journal Article

Song Z Y, Shang L Y, Lin T, Wei Y F, Chu J H
Maximum entropy mobility spectrum analysis of LPE-grown and anodic oxidated Hg1-xCdxTe(x=0.237)
Journal of Physics: Conference Series, 2017, 864: 012026.

| 标签: 传感器

153.Journal Article

Shen D P, Zhang X D, Sun Y, Kang T T, Dai N, Chu J H, Yu G L
Magnetotransport property of negative band gap HgCdTe bulk material
Acta Physica Sinica, 2017, 66: 247301.

| 标签: 传感器

154.Journal Article

Sha T T, Li W W, Chen S Y, Jiang K, Zhu J J, Hu Z G, Huang Z M, Chu J H, Kokh K A, Andreev Y M
Effects of S-doping on the electronic transition, band gap, and optical absorption of GaSe1-xSx single crystals
Journal of Alloys and Compounds, 2017, 721: 164-171.

| 标签: 传感器

155.Journal Article

Qiao Q, Xu D, Li Y W, Zhang J Z, Hu Z G, Chu J H
Detection of resistive switching behavior based on the Al2O3/ZnO/Al2O3 structure with alumina buffers
Thin Solid Films, 2017, 623: 8-13.

| 标签: 传感器

156.Journal Article

Qiao Q, Li Y W, Zhang J Z, Hu Z G, Chu J H
Experimental investigations of the bismuth oxide film grown by atomic layer deposition using triphenyl bismuth
Thin Solid Films, 2017, 622: 65-70.

| 标签: 传感器

157.Journal Article

Qiao Q, Jin L P, Li Y W, Li M J, Hu Z G, Chu J H
Influence of composition on structure, morphology and dielectric properties of BixAlyOz composite films synthesized by atomic layer deposition
Aip Advances, 2017, 7: 045120.

| 标签: 传感器

158.Journal Article

Meng Y H, Bai W, Gao H, Gong S J, Wang J Q, Duan C G, Chu J H
Ferroelectric control of Rashba spin orbit coupling at the GeTe(111)/InP(111) interface
Nanoscale, 2017, 9: 17957-17962.

| 标签: 传感器

159.Journal Article

Meng X K, Deng H M, Zhang Q, Sun L, Yang P X, Chu J H
Investigate the growth mechanism of Cu2FeSnS4 thin films by sulfurization of metallic precursor
Materials Letters, 2017, 186: 138-141.

| 标签: 传感器

160.Journal Article

Luo C, Wang C, Wu X, Zhang J, Chu J H
In Situ Transmission Electron Microscopy Characterization and Manipulation of Two-Dimensional Layered Materials beyond Graphene
Small, 2017, 13: 1604259.

| 标签: 传感器

161.Journal Article

Liu S, Wu X, Zhang D, Guo C, Wang P, Hu W, Li X, Zhou X, Xu H, Luo C, Zhang J, Chu J H
Ultrafast Dynamic Pressure Sensors Based on Graphene Hybrid Structure
Acs Applied Materials & Interfaces, 2017, 9: 24148-24154.

| 标签: 传感器

162.Journal Article

Liu L, Wang X D, Han L, Tian B B, Chen Y, Wu G J, Li D, Yan M G, Wang T, Sun S O, Shen H, Lin T, Sun J L, Duan C G, Wang J L, Meng X J, Chu J H
Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate
Aip Advances, 2017, 7: 065121.

| 标签: 传感器

163.Journal Article

Li X R, Cao H Y, Dong Y C, Yue F Y, Chen Y, Xiang P H, Sun L, Yang P X, Chu J H
Investigation of Cu2ZnSnS4 thin films with controllable Cu composition and its influence on photovoltaic properties for solar cells
Journal of Alloys and Compounds, 2017, 694: 833-840.

| 标签: 传感器

164.Journal Article

Li W W, Sha T T, Wang Y, Yu W L, Jiang K, Zhou H, Liu C, Hu Z G, Chu J H
Effects of deposition methods and processing techniques on band gap, interband electronic transitions, and optical absorption in perovskite CH3NH3PbI3 films
Applied Physics Letters, 2017, 111: 011906.

| 标签: 传感器

165.Journal Article

Li S M, Ma G H, Wang C, Zhao W C, Chen X S, Chu J H, Dai N, Shi W Z, Hu G J
Electrical and optical properties of a kind of ferroelectric oxide films comprising of PbZr0.4Ti0.6O3 stacks
Journal of Applied Physics, 2017, 122: 024102.

| 标签: 传感器

166.Journal Article

Li S M, Hu G J, Wang C, Zhao W C, Ma G H, Chen X S, Chu J H, Dai N
PbZr0.4Ti0.6O3 dielectric reflectors with large photonic band gap and high average optical reflectivity
Journal of the American Ceramic Society, 2017, 100: 1275-1279.

| 标签: 传感器

167.Journal Article

Li Q Q, Wang J Y, Li M J, Guo S, Zhang J Z, Hu Z G, Zhou Z Y, Wang G S, Dong X L, Chu J H
Structure evolution mechanism of Na0.5Bi2.5Nb2-xWxO9+delta ferroelectric ceramics: Temperature-dependent optical evidence and first-principles calculations
Physical Review B, 2017, 96: 024101.

| 标签: 传感器

168.Journal Article

Li M, Wang J, Zhang P, Deng Q, Zhang J, Jiang K, Hu Z, Chu J H
Superior adsorption and photoinduced carries transfer behaviors of dandelion-shaped Bi2S3@MoS2: experiments and theory
Sci Rep, 2017, 7: 42484.

| 标签: 传感器

169.Conference

Jing W, Zhiming H, Yanqing G, Chu J H
Flexible thermistors for far infrared detection: MCNO films with low resistivity and high TCR deposited on flexible organic sheets
2017 42nd International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) Cancun, Mexico, 27 Aug.-1 Sept. 2017

| 标签: 传感器

170.Journal Article

Guo S, Li M J, Li Q Q, Hu Z G, Li T, Wu L C, Song Z T, Chu J H
Localized states evolution and nitrides separation before crystallization in nitrogen incorporated GeTe: Evidence from ellipsometric spectra
Applied Physics Letters, 2017, 110: 161906.

| 标签: 传感器

171.Journal Article

Guo H, Wang L, Wang X, Yang P, Jing C, Chu J H
Fabrication and light capturing performance of stainless steel hollow fiber silicon solar cells
Material Science and Technology, 2017, 25: 48-54.

| 标签: 传感器

172.Journal Article

Guo B L, Deng H M, Zhai X Z, Zhou W H, Meng X K, Weng G E, Chen S Q, Yang P X, Chu J H
Cr doping-induced structural phase transition, optical tuning and magnetic enhancement in BiFeO3 thin films
Materials Letters, 2017, 186: 198-201.

| 标签: 传感器

173.Journal Article

Guan Z, Jiang Z Z, Tian B B, Zhu Y P, Xiang P H, Zhong N, Duan C G, Chu J H
Identifying intrinsic ferroelectricity of thin film with piezoresponse force microscopy
Aip Advances, 2017, 7: 095116.

| 标签: 传感器

174.Journal Article

Deng Q L, Li M J, Wang J Y, Zhang P, Jiang K, Zhang J Z, Hu Z G, Chu J H
Boosted adsorption-photocatalytic activities and potential lithium intercalation applications of layered potassium hexaniobate nano-family
Rsc Advances, 2017, 7: 28105-28113.

| 标签: 传感器

175.Journal Article

Deng Q, Li M, Wang J, Zhang P, Jiang K, Zhang J, Hu Z, Chu J H
Exploring optoelectronic properties and mechanisms of layered ferroelectric K4Nb6O17 nanocrystalline films and nanolaminas
Sci Rep, 2017, 7: 1883.

| 标签: 传感器

176.Journal Article

Cui A Y, Jiang K, Zhang P, Xu L P, Xu G S, Chen X M, Hu Z G, Chu J H
In Situ Exploration of Thermal-Induced Domain Evolution with Phase Transition in LiNbO3-Modified K0.5Na0.5NbO3 Single Crystal
Journal of Physical Chemistry C, 2017, 121: 14322-14329.

| 标签: 传感器

177.Journal Article

Cheng L, Wei L M, Liang H X, Yan Y D, Cheng G H, Lv M, Lin T, Kang T T, Yu G L, Chu J H, Zhang Z Y, Zeng C G
Optical Manipulation of Rashba Spin-Orbit Coupling at SrTiO3-Based Oxide Interfaces
Nano Letters, 2017, 17: 6534-6539.

| 标签: 传感器

178.Journal Article

Chen L L, Deng H M, Zhang Q, Yu J J, Tao J H, Sun L, Yang P X, Chu J H
Microstructural and morphological properties of spin-coated Cu2MnSn (S,Se)(4) thin films for solar cell applications
Materials Letters, 2017, 206: 249-252.

| 标签: 传感器

179.Journal Article

Chen L L, Deng H M, Tao J H, Sun L, Yang P X, Chu J H
Effect of the post-selenization time on the structural and optical properties of Cu2MnSn(S,Se)(4) thin films synthesized by sol-gel technique
Materials Letters, 2017, 201: 185-188.

| 标签: 传感器

180.Journal Article

Bai J W, Yang J, Zhang Y Y, Bai W, Lv Z F, Tang K, Sun J L, Meng X J, Tang X D, Chu J H
The ac sub-coercive-field dielectric resonses of (Pb, Sr)TiO3 films at low temperature
Ceramics International, 2017, 43: S516-S519.

| 标签: 传感器

181.Journal Article

Xu, Hejun; Wu, Xing; Li, Xinming; Luo, Chen; Liang, Fang; Orignac, Edmond; Zhang, Jian; Chu, Junhao
Properties of Graphene-metal Contacts Probed by Raman Spectroscopy
In: ACS Nano, vol. 12, no. 7, pp. 7239-7245, 2018, ISSN: 1936-0851.

Links | BibTeX | 标签: 石墨烯


@article{nokey,
title = {Properties of Graphene-metal Contacts Probed by Raman Spectroscopy},
author = {Hejun Xu and Xing Wu and Xinming Li and Chen Luo and Fang Liang and Edmond Orignac and Jian Zhang and Junhao Chu},
url = {http://www.insitudevices.com/wp-admin/admin.php?page=teachpress%2Faddpublications.php},
doi = {10.1016/j.carbon.2017.11.035},
issn = {0008-6223},
year = {2017},
date = {2017-11-15},
urldate = {2017-11-15},
journal = {Carbon},
volume = {127},
pages = {491-497},
keywords = {石墨烯},
pubstate = {published},
tppubtype = {article}
}


182.Journal Article

Liu, Bao; Lu, Bin; Chen, Xiaoqiu; Wu, Xin; Shi, Shengjie; Xu, Lei; Liu, Yun; Wang, Feifei; Zhao, Xiangyong; Shi, Wangzhou
A High-P erformance Flexible Piezoelectric Energy Harvester Based on Lead-Free (Na0.5Bi0.5)TiO3-BaTiO3 Piezoelectric Nanofibers
In: Journal of Materials Chemistry A, vol. 5, no. 45, pp. 23634-23640, 2017, ISSN: 2050-7488.

Links | BibTeX 标签:           


@article{RN82,
title = {A High-P erformance Flexible Piezoelectric Energy Harvester Based on Lead-Free (Na0.5Bi0.5)TiO3-BaTiO3 Piezoelectric Nanofibers},
author = {Bao Liu and Bin Lu and Xiaoqiu Chen and Xin Wu and Shengjie Shi and Lei Xu and Yun Liu and Feifei Wang and Xiangyong Zhao and Wangzhou Shi},
doi = {10.1039/c7ta07570g},
issn = {2050-7488},
year  = {2017},
date = {2017-01-01},
urldate = {2017-01-01},
journal = {Journal of Materials Chemistry A},
volume = {5},
number = {45},
pages = {23634-23640},
keywords = {},
pubstate = {published},
tppubtype = {article}
}


183.Journal Article

Liu, Shanbiao; Wu, Xing; Zhang, Dongdong; Guo, Congwei; Wang, Peng; Hu, Weida; Li, Xinming; Zhou, Xiaofeng; Xu, Hejun; Luo, Chen; Zhang, Jian; Chu, Junhao
Ultrafast Dynamic Pressure Sensors Based on Graphene Hybrid Structure
In: ACS Applied Materials & Interfaces, vol. 9, no. 28, pp. 24148-24154, 2017, ISSN: 1944-8244.

Links | BibTeX 标签: 传感器石墨烯           

@article{RN97,
title = {Ultrafast Dynamic Pressure Sensors Based on Graphene Hybrid Structure},
author = {Shanbiao Liu and Xing Wu and Dongdong Zhang and Congwei Guo and Peng Wang and Weida Hu and Xinming Li and Xiaofeng Zhou and Hejun Xu and Chen Luo and Jian Zhang and Junhao Chu},
doi = {10.1021/acsami.7b07311},
issn = {1944-8244},
year  = {2017},
date = {2017-01-01},
urldate = {2017-01-01},
journal = {ACS Applied Materials & Interfaces},
volume = {9},
number = {28},
pages = {24148-24154},
keywords = {传感器, 石墨烯},
pubstate = {published},
tppubtype = {article}
}


184.Journal Article

Luo, Chen; Wang, Chaolun; Wu, Xing; Zhang, Jian; Chu, Junhao
In Situ Transmission Electron Microscopy Characterization and Manipulation of Two-Dimensional Layered Materials beyond Graphene
In: Small, vol. 13, no. 35, 2017, ISSN: 1613-6810.

Links | BibTeX 标签: 传感器           


@article{RN86,
title = {In Situ Transmission Electron Microscopy Characterization and Manipulation of Two-Dimensional Layered Materials beyond Graphene},
author = {Chen Luo and Chaolun Wang and Xing Wu and Jian Zhang and Junhao Chu},
doi = {10.1002/smll.201604259},
issn = {1613-6810},
year  = {2017},
date = {2017-01-01},
urldate = {2017-01-01},
journal = {Small},
volume = {13},
number = {35},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}


185.Journal Article

Zhang, Feng; Chen, Cheng; Kershaw, Stephen V.; Xiao, Changtao; Han, Junbo; Zou, Bingsuo; Wu, Xing; Chang, Shuai; Dong, Yuping; Rogach, Andrey L.; Zhong, Haizheng
Ligand-Controlled Formation and Photoluminescence Properties of CH3NH3PbBr3 Nanocubes and Nanowires
In: Chemnanomat, vol. 3, no. 5, pp. 303-310, 2017, ISSN: 2199-692X.

Links | BibTeX 标签:           


@article{RN77,
title = {Ligand-Controlled Formation and Photoluminescence Properties of CH3NH3PbBr3 Nanocubes and Nanowires},
author = {Feng Zhang and Cheng Chen and Stephen V. Kershaw and Changtao Xiao and Junbo Han and Bingsuo Zou and Xing Wu and Shuai Chang and Yuping Dong and Andrey L. Rogach and Haizheng Zhong},
doi = {10.1002/cnma.201700034},
issn = {2199-692X},
year  = {2017},
date = {2017-01-01},
urldate = {2017-01-01},
journal = {Chemnanomat},
volume = {3},
number = {5},
pages = {303-310},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
186.Conference

Qin, Li; Zheyu, Liu; Fei, Qiao; Xing, Wu; Chaolun, Wang; Qi, Wei; Huazhong, Yang
From MISSION IMPOSSIBLE to Mission Possible: Fully Flexible Intelligent Contact Lens for Image Classification with Analog-to-Information Processing
2017 IEEE International Symposium on Circuits and Systems (ISCAS) , 2017.

Links | BibTeX 标签: 传感器 芯片设计           


@conference{RN200,
title = {From MISSION IMPOSSIBLE to Mission Possible: Fully Flexible Intelligent Contact Lens for Image Classification with Analog-to-Information Processing},
author = {Li Qin and Liu Zheyu and Qiao Fei and Wu Xing and Wang Chaolun and Wei Qi and Yang Huazhong},
doi = {10.1109/iscas.2017.8050607},
year  = {2017},
date = {2017-01-01},
urldate = {2017-01-01},
booktitle = {2017 IEEE International Symposium on Circuits and Systems (ISCAS) },
journal = {2017 IEEE International Symposium on Circuits and Systems (ISCAS)},
pages = {4 pp.-4 pp.},
keywords = {传感器, 芯片设计},
pubstate = {published},
tppubtype = {conference}
}


187.Journal Article

Zhu L Q, Shao J, Zhu L, Chen X R, Lin T, Zhang Y Y, Li Y Q, Qi Z, Bai W, Tang X D, Chu J H
Spin-glass state induced low field magnetization-step effect in a Hg1-xMnxTe single crystal
Physica Status Solidi B-Basic Solid State Physics, 2016, 253: 2015-2019.

| 标签: 传感器

188.Journal Article

Zhu L Q, Shao J, Chen X R, Li Y Q, Zhu L, Qi Z, Lin T, Bai W, Tang X D, Chu J H
Photoinduced magnetization effect in a p-type Hg1-xMnxTe single crystal investigated by infrared photoluminescence
Physical Review B, 2016, 94: 155201.

| 标签: 传感器

189.Journal Article

Zhu J J, Zhang J Z, Jiang K, Zhang H W, Hu Z G, Luo H S, Chu J H
Coexistence of Ferroelectric Phases and Phonon Dynamics in Relaxor Ferroelectric Na0.5Bi0.5TiO3 Based Single Crystals
Journal of the American Ceramic Society, 2016, 99: 2408-2414.

| 标签: 传感器

190.Journal Article

Zhou W L, Deng H M, Zheng T, Yang P X, Chu J H
Pb-free semiconductor ferroelectrics: An experimental study of Ba(Ti0.75Ce0.125Pd0.125)O3-delta thin films
Materials Letters, 2016, 177: 1-4.

| 标签: 传感器

191.Journal Article

Zhou W L, Deng H M, Yang P X, Chu J H
Optical modulation and magnetic transition in PbTi1-xPdxO3-delta ferroelectric thin films
Ceramics International, 2016, 42: 17162-17167.

| 标签: 传感器

192.

Zhou W L, Deng H M, Yang P X, Chu J H
Investigation of microstructural and optical properties of (K,Ba)(Ni,Nb)O3-delta thin films fabricated by pulsed laser deposition
Materials Letters, 2016, 181: 178-181.

| 标签: 传感器

193.Journal Article

Zhou W, Deng H, Yang P, Chu J H
Designing tunable band-gap and magnetization at room-temperature in Pb(Ti1-xMx)O3-delta(M= Ni and Pd) thin films
Materials Letters, 2016, 185: 323-326.

| 标签: 传感器

194.Journal Article

Zheng T, Deng H M, Zhou W L, Zhai X Z, Cao H Y, Yu L, Yang P X, Chu J H
Bandgap modulation and magnetic switching in PbTiO3 ferroelectrics by transition elements doping
Ceramics International, 2016, 42: 6033-6038.

| 标签: 传感器

195.Journal Article

Zhang Y B, Tao J H, Chen Y F, Xiong Z, Zhong M, Feng Z Q, Yang P X, Chu J H
A large-volume manufacturing of multi-crystalline silicon solar cells with 18.8% efficiency incorporating practical advanced technologies
Rsc Advances, 2016, 6: 58046-58054.

| 标签: 传感器

196.Journal Article

Zhang X L, Zhang J Z, Xu G S, Jiang K, Hu Z G, Chu J H
Optical evidences for an intermediate phase in relaxor ferroelectric Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystals
Aip Advances, 2016, 6: 025106.

| 标签: 传感器

197.Journal Article

Zhang P, Li M, Deng Q, Zhang J, Wu J, Hu Z, Chu J H
Spectral assignments in the infrared absorption region and anomalous thermal hysteresis in the interband electronic transition of vanadium dioxide films
Phys Chem Chem Phys, 2016, 18: 6239-6246.

| 标签: 传感器

198.Journal Article

Zhang J Z, Jiang K, Zhou Z Y, Hu Z G, Wang G S, Dong X L, Chu J H
Lattice Dynamics, Dielectric Constants, and Phase Diagram of Bismuth Layered Ferroelectric Bi3Ti1-xWxNbO9+ Ceramics
Journal of the American Ceramic Society, 2016, 99: 3610-3615.

| 标签: 传感器

199.Journal Article

Zhang J Z, Jiang K, Hu Z G, Chu J H
A novel technique for probing phase transitions in ferroelectric functional materials: Condensed matter spectroscopy
Science China-Technological Sciences, 2016, 59: 1537-1548.

| 标签: 传感器

200.Journal Article

Zhang H B, Qi R J, Ding N F, Huang R, Sun L, Duan C G, Fisher C A J, Chu J H, Ikuhara Y
Elemental intermixing within an ultrathin SrRuO3 electrode layer in epitaxial heterostructure BaTiO3/SrRuO3/SrTiO3
Aip Advances, 2016, 6: 015010.

| 标签: 传感器

201.Journal Article

Yu L, Deng H M, Zhou W L, Zhang Q, Yang P X, Chu J H
Effects of (Sm, Mn and Ni) co-doping on structural, optical and magnetic properties of BiFeO3 thin films fabricated by a sol-gel technique
Materials Letters, 2016, 170: 85-88.

| 标签: 传感器

202.Journal Article

Yu L, Deng H M, Zhou W L, Cao H Y, Zheng T, Yang P X, Chu J H
Modified structure and optical properties of multiferroic Pb(Zr0.53Ti0.47)(x)(Fe0.5Nb0.5)((1-x))O-3 ceramics
Ceramics International, 2016, 42: 917-922.

| 标签: 传感器

203.Journal Article

Yu L, Deng H, Zhou W, Cao H, Zhai X, Yang P, Chu J H
Influence of B site-cations on phase transition, magnetic switching and band-gap modulation in Pb(B′0.5B″0.5)O3–Pb(Zr0.53Ti0.47)O3 ceramics
Ceramics International, 2016, 43: 2372-2378.

| 标签: 传感器

204.Journal Article

Yin W H, Chen C, Bai W, Yang J, Zhang Y Y, Tang X D, Duan C G, Chu J H
Dielectric behavior dependence on temperature and Cr-doping contents of Aurivillius Bi5Ti3FeO15 ceramics
Ceramics International, 2016, 42: 4298-4305.

| 标签: 传感器

205.Journal Article

Xu Z, Deng Q L, Zhang P, Zhang J Z, Li Y W, Hu Z G, Chu J H
Concentration and temperature dependent double energy gap characteristic properties of hexagonal YMnO3-xBiFeO(3) films
Journal of Physics D-Applied Physics, 2016, 49: 465302.

| 标签: 传感器

206.Journal Article

Wu G, Wang X, Wang P, Huang H, Chen Y, Sun S, Shen H, Lin T, Wang J, Zhang S, Bian L, Sun J, Meng X, Chu JH
Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer
Nanotechnology, 2016, 27: 364002.

| 标签: 传感器

207.Journal Article

Wang X D, Tang M H, Chen Y, Wu G J, Huang H, Zhao X L, Tian B B, Wang J L, Sun S, Shen H, Lin T, Sun J L, Meng X J, Chu J H
Flexible graphene field effect transistor with ferroelectric polymer gate
Optical and Quantum Electronics, 2016, 48: 345.

| 标签: 传感器

208.Journal Article

Wang X, Guo H, Wang L, Yue F, Jing C, Chu J H
Preparation and transmission characteristics of a mid-infrared attenuated total reflection hollow waveguide based on a stainless steel capillary tube
Appl Opt, 2016, 55: 6404-6409.

| 标签: 传感器

209.Journal Article

Wang W S, Hou Y, Zhang Z H, Zhou W, Gao Y Q, Wu J, Chu J H
The structural and optical properties of Zn-x Ni(1-x) Mn-2 O-4 films grown on Pt/Ti/SiO2/Si substrate
Journal of Infrared and Millimeter Waves, 2016, 35: 676-680.

| 标签: 传感器

210.Journal Article

Wang W L, Khan K, Zhang X Y, Qin H M, Jiang J, Miao L J, Jiang K M, Wang P J, Dai M Z, Chu J H
A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors (vol 60, pg 67, 2016)
Microelectronics Reliability, 2016, 67: 159-159.

| 标签: 传感器

211.Journal Article

Wang W, Khan K, Zhang X, Qin H, Jiang J, Miao L, Jiang K, Wang P, Dai M, Chu J H
A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors
Microelectronics Reliability, 2016, 60: 67-69.

| 标签: 传感器

212.Journal Article

Tian B B, Wang J L, Fusil S, Liu Y, Zhao X L, Sun S, Shen H, Lin T, Sun J L, Duan C G, Bibes M, Barthelemy A, Dkhil B, Garcia V, Meng X J, Chu J H
Tunnel electroresistance through organic ferroelectrics
Nature Communications, 2016, 7: 11502

| 标签: 传感器

213.Journal Article

Tao J H, Liu J F, Chen L L, Cao H Y, Meng X K, Zhang Y B, Zhang C J, Sun L, Yang P X, Chu J H
7.1% efficient co-electroplated Cu2ZnSnS4 thin film solar cells with sputtered CdS buffer layers
Green Chemistry, 2016, 18: 550-557.

| 标签: 传感器

214.Journal Article

Tao J H, Chen L L, Cao H Y, Zhang C J, Liu J F, Zhang Y B, Huang L, Jiang J C, Yang P X, Chu J H
Co-electrodeposited Cu2ZnSnS4 thin-film solar cells with over 7% efficiency fabricated via fine-tuning of the Zn content in absorber layers
Journal of Materials Chemistry A, 2016, 4: 3798-3805.

| 标签: 传感器

215.Journal Article

Tang K, Zhu X T, Zhu L Q, Bai W, Bai J W, Dong W X, Yang J, Zhang Y Y, Chen Y, Tang X D, Chu J H
Stoichiometry dependence of the optical and minority -carrier lifetime behaviors of CdTe epitaxial films: A low -temperature and time-resolved photoluminescence study
Applied Surface Science, 2016, 387: 477-482.

| 标签: 传感器

216.Journal Article

Tang K, Zhu X T, Bai W, Zhu L Q, Bai J W, Dong W X, Yang J, Zhang Y Y, Tang X D, Chu J H
Molecular beam epitaxial growth and optical properties of the CdTe thin films on highly mismatched SrTiO3 substrates
Journal of Alloys and Compounds, 2016, 685: 370-375.

| 标签: 传感器

217.Journal Article

Sun L, Ma J H, Yao N J, Huang Z M, Chu J H
Copper content dependence of electrical properties and Raman spectra of Se-deficient Cu(In,Ga)Se-2 thin films for solar cells
Journal of Materials Science-Materials in Electronics, 2016, 27: 9124-9130.

| 标签: 传感器

218.Journal Article

Sun L, Lv M, Liu X, Xu Y, Wang R, Lin T, Yu G, Dai N, Chu J H
Zeeman splitting and spin-orbit interaction in Hg1-xCdxTe inversion layers
Epl, 2016, 115: 17007

| 标签: 传感器

219.Journal Article

Peng L, Jiang K, Zhang J Z, Hu Z G, Wang G S, Dong X L, Chu J H
Temperature-dependent phonon Raman scattering and spectroscopic ellipsometry of pure and Ca-doped SrxBa1-xNb2O6 ferroelectric ceramics across the phase transition region
Journal of Physics D-Applied Physics, 2016, 49: 035307.

| 标签: 传感器

220.Journal Article

Meng X K, Deng H M, Tao J H, Cao H Y, Li X R, Sun L, Yang P X, Chu J H
Heating rate tuning in structure, morphology and electricity properties of Cu2FeSnS4 thin films prepared by sulfurization of metallic precursors
Journal of Alloys and Compounds, 2016, 680: 446-451.

| 标签: 传感器

221.Journal Article

Lv M, Wang R, Wei L M, Yu G L, Lin T, Dai N, Chu J H, Lockwood D J
Strained HgTe plates grown on SrTiO3 investigated by micro-Raman mapping
Journal of Applied Physics, 2016, 120: 115304.

| 标签: 传感器

222.Journal Article

Luo M, Shen Y H, Chu J H
First-principles study of the magnetism of Ni-doped MoS2 monolayer
Japanese Journal of Applied Physics, 2016, 55: 093001.

| 标签: 传感器

223.Journal Article

Liu B L, Tian B B, Zhao X L, Wang J L, Sun S, Shen H, Sun J L, Meng X J, Chu J H
Asymmetric capacitance-voltage curves induced by pinned interface dipoles in poly(vinylidene fluoride/trifluoroethylene) capacitor
Journal of Infrared and Millimeter Waves, 2016, 35: 143-146.

| 标签: 传感器

224.Journal Article

Li Y W, Qiao Q, Dong Z, Zhang J Z, Hu Z G, Chu J H
Enhanced dielectric properties in bismuth-doped alumina films prepared by atomic layer deposition
Journal of Non-Crystalline Solids, 2016, 443: 17-22.

| 标签: 传感器

225.Journal Article

Li X R, Wang J Y, Zhang J Z, Li Y W, Hu Z G, Chu J H
Spin-manipulated phonon dynamics during magnetic phase transitions in triangular lattice antiferromagnet CuCr1-xMgxO2 semiconductor films
Rsc Advances, 2016, 6: 27136-27142.

| 标签: 传感器

226.Journal Article

Li M J, Xu L P, Shi K, Zhang J Z, Chen X F, Hu Z G, Dong X L, Chu J H
Interband electronic transitions and phase diagram of PbZr1-xTixO3 (0.05 <= x <= 0.70) ceramics: ellipsometric experiment and first-principles theory
Journal of Physics D-Applied Physics, 2016, 49: 275305.

| 标签: 传感器

227.Journal Article

Li G F, Ma G H, Ma H, Chu F H, Cui H Y, Liu W J, Song X J, Jiang Y H, Huang Z M, Chu J H
Photocarrier dynamics in zinc selenide studied with optical-pump terahertz-probe spectroscopy
Acta Physica Sinica, 2016, 65: 247201.

| 标签: 传感器

228.Journal Article

Li C Q, Zhang J Z, Xu L P, Zhu J J, Duan Z H, Hu Z G, Chu J H
Temperature dependent optical dispersion and electronic transitions of highly a-axis oriented 0.8Pb(Zn1/3Nb2/3)O-3-0.2PbTiO(3) films on SrTiO3 crystals: An ellipsometric evidence
Thin Solid Films, 2016, 603: 14-20.

| 标签: 传感器

229.Journal Article

Jiang K, Zhang P, Zhang J Z, Xu G S, Li W W, Hu Z G, Chu J H
Relationship between negative thermal expansion and lattice dynamics in a tetragonal PbTiO3-Bi(Mg1/2Ti1/2)O-3 perovskite single crystal
Rsc Advances, 2016, 6: 3159-3164.

| 标签: 传感器

230.Journal Article

Huang Z, Zhou W, Tong J, Huang J, Ouyang C, Qu Y, Wu J, Gao Y, Chu J H
Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection
Adv Mater, 2016, 28: 112-117.

| 标签: 传感器

231.Journal Article

Huang Z, Zhou W, Huang J, Wu J, Gao Y, Qu Y, Chu J H
Directly tailoring photon-electron coupling for sensitive photoconductance
Sci Rep, 2016, 6: 22938.

| 标签: 传感器

232.Journal Article

Huang T, Zhang P, Xu L P, Chen C, Zhang J Z, Hu Z G, Luo H S, Chu J H
Electronic structures and abnormal phonon behaviors of cobalt-modified Na0.5Bi0.5TiO3-6% BaTiO3 single crystals
Aip Advances, 2016, 6: 105311.

| 标签: 传感器

233.Journal Article

Huang H, Wang X D, Wang P, Wu G J, Chen Y, Meng C M, Liao L, Wang J L, Hu W D, Shen H, Lin T, Sun J L, Meng X J, Chen X S, Chu J H
Ferroelectric polymer tuned two dimensional layered MoTe2 photodetector
Rsc Advances, 2016, 6: 87416-87421.

| 标签: 传感器

234.Journal Article

Huang H, Wang J, Hu W, Liao L, Wang P, Wang X, Gong F, Chen Y, Wu G, Luo W, Shen H, Lin T, Sun J, Meng X, Chen X, Chu J H
Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect
Nanotechnology, 2016, 27: 445201.

| 标签: 传感器

235.Journal Article

Guo Y X, Cheng W J, Jiang J C, Zuo S H, Shi F W, Chu J H
The structural, morphological and optical-electrical characteristic of Cu2XSnS4 (X:Cu,Mg) thin films fabricated by novel ultrasonic co-spray pyrolysis
Materials Letters, 2016, 172: 68-71.

| 标签: 传感器

236.Journal Article

Guo Y X, Cheng W J, Jiang J C, Zuo S H, Shi F W, Chu J H
The effect of Cu/Mo bi-layer film on the structural, morphological and electro-optical characteristics of AZO/metal/AZO transparent conductive film
Vacuum, 2016, 131: 164-169.

| 标签: 传感器

237.Journal Article

Guo Y X, Cheng W J, Jiang J C, Chu J H
The effect of substrate temperature, Cu/Sn ratio and post-annealing on the phase-change and properties of Cu2SnS3 film deposited by ultrasonic spray pyrolysis
Journal of Materials Science-Materials in Electronics, 2016, 27: 4636-4646.

| 标签: 传感器

238.Journal Article

Guo S, Xu L, Zhang J, Hu Z, Li T, Wu L, Song Z, Chu J H
Enhanced Crystallization Behaviors of Silicon-Doped Sb2Te Films: Optical Evidences
Sci Rep, 2016, 6: 33639.

| 标签: 传感器

239.Journal Article

Guo S, Huang T, Xu L P, Shi K, Zhang J Z, Ji X L, Hu Z G, Wu L C, Song Z T, Chu J H
Observation of an intermediate phase in tungsten doped Sb2Te phase change thin films by temperature dependent measurements of structural, optical, and electronic properties
Journal of Physics D-Applied Physics, 2016, 49: 265105.

| 标签: 传感器

240.Journal Article

Guo H, Wang X, Wang L, Yang P, Jing C, Chu J H
Design,fabrication and characterization of titanium metallic hollow fiber organic perovskite solar cells
Journal of Optoelectronics·Laser, 2016, 27: 1163-1168.

| 标签: 传感器

241.Journal Article

Gong S J, Cai J, Yao Q F, Tong W Y, Wan X G, Duan C G, Chu J H
Orbital control of Rashba spin orbit coupling in noble metal surfaces
Journal of Applied Physics, 2016, 119: 125310.

| 标签: 传感器

242.Journal Article

Ge J, Yu Y, Ke W, Li J, Tan X, Wang Z, Chu J H, Yan Y
Improved Performance of Electroplated CZTS Thin-Film Solar Cells with Bifacial Configuration
Chemsuschem, 2016, 9: 2149-2158.

| 标签: 传感器

243.Journal Article

Dong Y C, He J, Li X R, Chen Y, Sun L, Yang P X, Chu J H
Study on the preheating duration of Cu2SnS3 thin films using RF magnetron sputtering technique for photovoltaics
Journal of Alloys and Compounds, 2016, 665: 69-75.

| 标签: 传感器

244.Journal Article

Dong Y, Shen P, Li X, Chen Y, Sun L, Yang P, Chu J H
Comparative study of the structural and optical properties of Cu2SnX3 and Cu2ZnSnX4 (X = S, Se) thin films and optoelectronic devices
Materials Research Express, 2016, 3: 116411

| 标签: 传感器

245.Journal Article

Ding X J, Guo S, Hu Z G, Chen X F, Wang G S, Dong X L, Chu J H
The intermediate phase and low wavenumber phonon modes in antiferroelectric (Pb0.97La0.02) (Zr0.60Sn0.40-yTiy)O-3 ceramics discovered from temperature dependent Raman spectra
Journal of Alloys and Compounds, 2016, 667: 310-316.

| 标签: 传感器

246.Journal Article

Dai M, Khan K, Zhang S, Jiang K, Zhang X, Wang W, Liang L, Cao H, Wang P, Wang P, Miao L, Qin H, Jiang J, Xue L, Chu J H
A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy
Scientific Reports, 2016, 6: 24096

| 标签: 传感器

247.Journal Article

Cui L J, Zeng Y P, Zhang Y, Zhou W Z, Shang L Y, Lin T, Chu J H
Beating patterns in the Shubnikov-de Haas oscillations originated from spin splitting in In0.52Al0.48As/In0.65Ga0.35As heterostructures: Experiment and calculation
Physica E-Low-Dimensional Systems & Nanostructures, 2016, 83: 114-118.

| 标签: 传感器

248.Journal Article

Cui J Y, Yang P X, Chu J H
Influence of Ce and Ni co-doping on structural, optical and magnetic properties of BiFeO3 thin films
Journal of Infrared and Millimeter Waves, 2016, 35: 322.

| 标签: 传感器

249.Journal Article

Chen Y, Wang X, Wang P, Huang H, Wu G, Tian B, Hong Z, Wang Y, Sun S, Shen H, Wang J, Hu W, Sun J, Meng X, Chu J H
Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer
ACS Appl Mater Interfaces, 2016, 8: 32083-32088.

| 标签: 传感器

250.Journal Article

Chen L L, Deng H M, Tao J H, Cao H Y, Sun L, Yang P X, Chu J H
Strategic improvement of Cu2MnSnS4 films by two distinct post annealing processes for constructing thin film solar cells
Acta Materialia, 2016, 109: 1-7.

| 标签: 传感器

251.Journal Article

Chen C, Song K, Bai W, Yang J, Zhang Y Y, Xiang P H, Qin M Y, Tang X D, Chu J H
Effect of Nb and more Fe ions co-doping on the microstructures, magnetic, and piezoelectric properties of Aurivillius Bi5Ti3FeO15 phases
Journal of Applied Physics, 2016, 120: 214104.

| 标签: 传感器

252.Journal Article

Cao H Y, Deng H M, Chen L L, Tao J H, Meng X K, Liu J, Yue F Y, Sun L, Yang P X, Chu J H
Antimony-induced grain growth and properties modification of Cu(In, Al)Se-2 thin films fabricated by selenization of sputtered stacked precursors
Journal of Alloys and Compounds, 2016, 689: 21-29.

| 标签: 传感器

253.Journal Article

Bai W, Chen C, Tang K, Yang J, Tang X, Chu J H
Sintering, Structural and Optical Properties of Aurivillius Bi4LaTi3TMO15 (TM = Co, Cr, Fe, Mn and Ni) Ceramics
Ferroelectrics, 2016, 492: 109-116.

| 标签: 传感器

254.Journal Article

Fang, Hehai; Hu, Weida; Wang, Peng; Guo, Nan; Luo, Wenjin; Zheng, Dingshan; Gong, Fan; Luo, Man; Tian, Hongzheng; Zhang, Xutao; Luo, Chen; Wu, Xing; Chen, Pingping; Liao, Lei; Pan, Anlian; Chen, Xiaoshuang; Lu, Wei
Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire
In: Nano Letters, vol. 16, no. 10, pp. 6416-6424, 2016, ISSN: 1530-6984.

Links | BibTeX 标签:           


@article{RN64,
title = {Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire},
author = {Hehai Fang and Weida Hu and Peng Wang and Nan Guo and Wenjin Luo and Dingshan Zheng and Fan Gong and Man Luo and Hongzheng Tian and Xutao Zhang and Chen Luo and Xing Wu and Pingping Chen and Lei Liao and Anlian Pan and Xiaoshuang Chen and Wei Lu},
doi = {10.1021/acs.nanolett.6b02860},
issn = {1530-6984},
year  = {2016},
date = {2016-01-01},
urldate = {2016-01-01},
journal = {Nano Letters},
volume = {16},
number = {10},
pages = {6416-6424},
keywords = {},
pubstate = {published},
tppubtype = {article}
}


255.Journal Article

Liu, Y. W.; Yuan, X.; Zhang, C.; Jin, Z.; Narayan, A.; Luo, C.; Chen, Z. G.; Yang, L.; Zou, J.; Wu, X.; Sanvito, S.; Xia, Z. C.; Li, L.; Wang, Z.; Xiu, F. X.
Zeeman Splitting and Dynamical Mass Generation in Dirac Semimetal ZrTe5
In: Nature Communications, vol. 7, 2016, ISSN: 2041-1723.

Abstract | Links | BibTeX 标签: 传感器           

Dirac semimetals have attracted extensive attentions in recent years. It has been theoretically suggested that many-body interactions may drive exotic phase transitions, spontaneously generating a Dirac mass for the nominally massless Dirac electrons. So far, signature of interaction-driven transition has been lacking. In this work, we report high-magnetic-field transport measurements of the Dirac semimetal candidate ZrTe5. Owing to the large g factor in ZrTe5, the Zeeman splitting can be observed at magnetic field as low as 3 T. Most prominently, high pulsed magnetic field up to 60 T drives the system into the ultra-quantum limit, where we observe abrupt changes in the magnetoresistance, indicating field-induced phase transitions. This is interpreted as an interaction-induced spontaneous mass generation of the Dirac fermions, which bears resemblance to the dynamical mass generation of nucleons in high-energy physics. Our work establishes Dirac semimetals as ideal platforms for investigating emerging correlation effects in topological matters.


@article{RN63,
title = {Zeeman Splitting and Dynamical Mass Generation in Dirac Semimetal ZrTe5},
author = {Y. W. Liu and X. Yuan and C. Zhang and Z. Jin and A. Narayan and C. Luo and Z. G. Chen and L. Yang and J. Zou and X. Wu and S. Sanvito and Z. C. Xia and L. Li and Z. Wang and F. X. Xiu},
doi = {10.1038/ncomms12516},
issn = {2041-1723},
year  = {2016},
date = {2016-01-01},
urldate = {2016-01-01},
journal = {Nature Communications},
volume = {7},
abstract = {Dirac semimetals have attracted extensive attentions in recent years. It has been theoretically suggested that many-body interactions may drive exotic phase transitions, spontaneously generating a Dirac mass for the nominally massless Dirac electrons. So far, signature of interaction-driven transition has been lacking. In this work, we report high-magnetic-field transport measurements of the Dirac semimetal candidate ZrTe5. Owing to the large g factor in ZrTe5, the Zeeman splitting can be observed at magnetic field as low as 3 T. Most prominently, high pulsed magnetic field up to 60 T drives the system into the ultra-quantum limit, where we observe abrupt changes in the magnetoresistance, indicating field-induced phase transitions. This is interpreted as an interaction-induced spontaneous mass generation of the Dirac fermions, which bears resemblance to the dynamical mass generation of nucleons in high-energy physics. Our work establishes Dirac semimetals as ideal platforms for investigating emerging correlation effects in topological matters.},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}


256.Journal Article

Shi, Huimin; Wang, Xuejiao; Zheng, Mengjie; Wu, Xing; Chen, Yiqin; Yang, Zhengmei; Zhang, Guanhua; Duan, Huigao
Hot-Electrons Mediated Efficient Visible-Light Photocatalysis of Hierarchical Black Au-TiO2 Nanorod Arrays on Flexible Substrate
In: Advanced Materials Interfaces, vol. 3, no. 22, 2016, ISSN: 2196-7350.

Links | BibTeX 标签:           


@article{RN74,
title = {Hot-Electrons Mediated Efficient Visible-Light Photocatalysis of Hierarchical Black Au-TiO2 Nanorod Arrays on Flexible Substrate},
author = {Huimin Shi and Xuejiao Wang and Mengjie Zheng and Xing Wu and Yiqin Chen and Zhengmei Yang and Guanhua Zhang and Huigao Duan},
doi = {10.1002/admi.201600588},
issn = {2196-7350},
year  = {2016},
date = {2016-01-01},
urldate = {2016-01-01},
journal = {Advanced Materials Interfaces},
volume = {3},
number = {22},
keywords = {},
pubstate = {published},
tppubtype = {article}
}


257.Journal Article

Zheng, D. S.; Wang, J. L.; Hu, W. D.; Liao, L.; Fang, H. H.; Guo, N.; Wang, P.; Gong, F.; Wang, X. D.; Fan, Z. Y.; Wu, X.; Meng, X. J.; Chen, X. S.; Lu, W.
When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors
In: Nano Letters, vol. 16, no. 4, pp. 2548-2555, 2016, ISSN: 1530-6984.

Abstract | Links | BibTeX 标签: 传感器           

One-dimensional semiconductor nanowires (NWs) have been widely applied in photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier concentration at certain level results in appreciable dark current, which limits the detectivity of the devices. Here, we fabricated a novel type of ferroelectric-enhanced side-gated NW photodetectors. The intrinsic carriers in the NW channel can be fully depleted by the ultrahigh electrostatic field from polarization of P(VDF-TrFE) ferroelectric polymer. In this scenario, the dark current is significantly reduced and thus the sensitivity of the photodetector is increased even when the gate voltage is removed. Particularly, a single InP NW photodetector exhibits high-photoconductive gain of 4.2 x 10(5), responsivity of 2.8 x 10(5) A W-1, and specific detectivity (D*) of 9.1 x 10(15) Jones at lambda = 830 nm. To further demonstrate the universality of the configuration we also demonstrate ferroelectric polymer side-gated single CdS NW photodetectors with ultrahigh photoconductive gain of 1.2 x 10(7), responsivity of 5.2 x 10(6) A W-1 and D* up to 1.7 x 10(18) Jones at lambda = 520 nm. Overall, our work demonstrates a new approach to fabricate a controllable, full-depleted, and high-performance NW photodetector. This can inspire novel device structure design of high-performance optoelectronic devices based on semiconductor NWs.


@article{RN59,
title = {When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors},
author = {D. S. Zheng and J. L. Wang and W. D. Hu and L. Liao and H. H. Fang and N. Guo and P. Wang and F. Gong and X. D. Wang and Z. Y. Fan and X. Wu and X. J. Meng and X. S. Chen and W. Lu},
doi = {10.1021/acs.nanolett.6b00104},
issn = {1530-6984},
year  = {2016},
date = {2016-01-01},
urldate = {2016-01-01},
journal = {Nano Letters},
volume = {16},
number = {4},
pages = {2548-2555},
abstract = {One-dimensional semiconductor nanowires (NWs) have been widely applied in photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier concentration at certain level results in appreciable dark current, which limits the detectivity of the devices. Here, we fabricated a novel type of ferroelectric-enhanced side-gated NW photodetectors. The intrinsic carriers in the NW channel can be fully depleted by the ultrahigh electrostatic field from polarization of P(VDF-TrFE) ferroelectric polymer. In this scenario, the dark current is significantly reduced and thus the sensitivity of the photodetector is increased even when the gate voltage is removed. Particularly, a single InP NW photodetector exhibits high-photoconductive gain of 4.2 x 10(5), responsivity of 2.8 x 10(5) A W-1, and specific detectivity (D*) of 9.1 x 10(15) Jones at lambda = 830 nm. To further demonstrate the universality of the configuration we also demonstrate ferroelectric polymer side-gated single CdS NW photodetectors with ultrahigh photoconductive gain of 1.2 x 10(7), responsivity of 5.2 x 10(6) A W-1 and D* up to 1.7 x 10(18) Jones at lambda = 520 nm. Overall, our work demonstrates a new approach to fabricate a controllable, full-depleted, and high-performance NW photodetector. This can inspire novel device structure design of high-performance optoelectronic devices based on semiconductor NWs.},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}


258.Journal Article

Zhu, L. S.; Zhang, J.; Xu, X. W.; Yu, Y. Z.; Wu, X.; Yang, T.; Wang, X. H.
Room Temperature H-2 Detection Based on Pd/SiNWs/p-Si Schottky Diode Structure
In: Sensors and Actuators B-Chemical, vol. 227, pp. 515-523, 2016, ISSN: 0925-4005.

Links | BibTeX 标签: 传感器           


@article{RN60,
title = {Room Temperature H-2 Detection Based on Pd/SiNWs/p-Si Schottky Diode Structure},
author = {L. S. Zhu and J. Zhang and X. W. Xu and Y. Z. Yu and X. Wu and T. Yang and X. H. Wang},
doi = {10.1016/j.snb.2015.12.080},
issn = {0925-4005},
year  = {2016},
date = {2016-01-01},
urldate = {2016-01-01},
journal = {Sensors and Actuators B-Chemical},
volume = {227},
pages = {515-523},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}


@article{RN60,
title = {Room Temperature H-2 Detection Based on Pd/SiNWs/p-Si Schottky Diode Structure},
author = {L. S. Zhu and J. Zhang and X. W. Xu and Y. Z. Yu and X. Wu and T. Yang and X. H. Wang},
doi = {10.1016/j.snb.2015.12.080},
issn = {0925-4005},
year  = {2016},
date = {2016-01-01},
urldate = {2016-01-01},
journal = {Sensors and Actuators B-Chemical},
volume = {227},
pages = {515-523},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}


259.Journal Article

Zou Y H, Han L, Yuan G L, Wang J L, Sun S, Sun J L, Meng X J, Chu J H
Bent Deformation's Impact on Ferroelectric and Pyroelectric Properties of the P(VDF-TrFE) Thin Films
Ferroelectrics, 2015, 488: 154-161.

| 标签: 传感器

260.Journal Article

Zhu Z, Chu J H
Approximate analytical channel potential model of poly-Si thin film transistors operated in the strong inversion region under the high gate and low drain biases
Journal of Physics: Conference Series, 2015, 574: 012100.

| 标签: 传感器

261.Journal Article

Zhu L Q, Shao J, Zhu L, Chen X R, Qi Z, Lin T, Bai W, Tang X D, Chu J H
Influence of local magnetization on acceptor-bound complex state in Hg1-xMnxTe single crystals
Journal of Applied Physics, 2015, 118: 045707.

| 标签: 传感器

262.Journal Article

Zhu J-J, Zhang J-Z, Xu G-S, Zhang X-L, Yu W-L, Hu Z-G, Chu J H
UV-Vis-NIR optical properties of Pb(Mg-1/3 Nb-2/3) O-3-0. 3PbTiO(3) single crystal
Journal of Infrared and Millimeter Waves, 2015, 34: 442-446.

| 标签: 传感器

263.Journal Article

Zhu J J, Zhang J Z, Xu G S, Zhang X L, Hu Z G, Chu J H
Phonon modes and local polar distortions in nanoclusters of Pb(In1/2Nb1/2) O-3-Pb(Mg1/3Nb2/3) O-3-PbTiO3 crystals probed by terahertz reflectance spectra and Raman scattering
Laser Physics Letters, 2015, 12: 056103.

| 标签: 传感器

264.Journal Article

Zhou W L, Deng H M, Yu L, Yang P X, Chu J H
Magnetism switching and band-gap narrowing in Ni-doped PbTiO3 thin films
Journal of Applied Physics, 2015, 117: 194102.

| 标签: 传感器

265.Journal Article

Zhou W L, Deng H M, Yu L, Yang P X, Chu J H
Band-gap narrowing and magnetic behavior of Ni-doped Ba(Ti0.875Ce0.125)O-3 thin films
Journal of Physics D-Applied Physics, 2015, 48: 455308.

| 标签: 传感器

266.Journal Article

Zhou W L, Deng H M, Ding N F, Yu L, Yue F Y, Yang P X, Chu J H
Microstructure tuning and magnetism switching of ferroelectric barium titanate
Materials Characterization, 2015, 107: 1-6.

| 标签: 传感器

267.Journal Article

Zhou W L, Deng H M, Cao H Y, He J, Liu J, Yang P X, Chu J H
Effects of Sm and Mn co-doping on structural, optical and magnetic properties of BiFeO3 films prepared by a sol-gel technique
Materials Letters, 2015, 144: 93-96.

| 标签: 传感器

268.Journal Article

Zhou W, Deng H, Yu L, Yang P, Chu J H
Optical band-gap narrowing in perovskite ferroelectric ABO(3) ceramics (A=Pb, Ba; B=Ti) by ion substitution technique
Ceramics International, 2015, 41: 13389-13392.

| 标签: 传感器

269.Journal Article

Zhong N, Xiang P H, Zhang Y Y, Wu X, Tang X D, Yang P X, Duan C G, Chu J H
Polarization fluctuation behavior of lanthanum substituted Bi4Ti3O12 thin films
Journal of Applied Physics, 2015, 118: 104102.

| 标签: 传感器

270.Journal Article

Zhao X L, Zhang Y, Wang J L, Zhan Q F, Wang X D, Huang H, Tian B B, Lin T, Sun S, Tian L, Han L, Sun J L, Meng X J, Chu J H
Ferroelectric control of magnetism in P(VDF-TrFE)/Co heterostructure
Journal of Materials Science-Materials in Electronics, 2015, 26: 7502-7506.

| 标签: 传感器

271.Journal Article

Zhao X L, Wang J L, Tian B B, Liu B L, Wang X D, Huang H, Zou Y H, Sun S, Lin T, Han L, Sun J L, Meng X J, Chu J H
High temperature coefficient of resistance for a ferroelectric tunnel junction
Applied Physics Letters, 2015, 107: 062904.

| 标签: 传感器

272.Journal Article

Zhao X L, Wang J L, Liu B L, Wang X D, Huang H, Lin T, Sun S H, Han L, Sun J L, Meng X J, Chu J H
Properties of Tunability and Stored Energy Density in the Ferroelectric Multilayers
Ferroelectrics, 2015, 488: 112-118.

| 标签: 传感器

273.Journal Article

Zhao X G, Chu J H, Tang Z
Magnetic Properties, Heisenberg Exchange Interaction, and Curie Temperature of CdS Nanoclusters
Journal of Physical Chemistry C, 2015, 119: 29071-29075.

| 标签: 传感器

274.Journal Article

Zhang Y B, Xu J M, Mao J, Tao J H, Shen H, Chen Y F, Feng Z Q, Verlinden P J, Yang P X, Chu J H
Long-term reliability of silicon wafer-based traditional backsheet modules and double glass modules
Rsc Advances, 2015, 5: 65768-65774.

| 标签: 传感器

275.Journal Article

Zhang X L, Zhu J J, Xu G S, Zhang J Z, Xu L P, Hu Z G, Chu J H
Temperature dependent spectroscopic ellipsometry and Raman scattering of PbTiO3-based relaxor ferroelectric single crystals around MPB region
Optical Materials Express, 2015, 5: 2478-2490.

| 标签: 传感器

276.Journal Article

Zhang X B, Xiong Z, Chen Y F, Feng Z Q, Yang P X, Chu J H
Correlation between polycrystalline based solar cell conversion efficiency and crystallization defects
Journal of Infrared and Millimeter Waves, 2015, 34: 551-+.

| 标签: 传感器

277.Journal Article

Zhang P, Jiang K, Deng Q L, You Q H, Zhang J Z, Wu J D, Hu Z G, Chu J H
Manipulations from oxygen partial pressure on the higher energy electronic transition and dielectric function of VO2 films during a metal-insulator transition process
Journal of Materials Chemistry C, 2015, 3: 5033-5040.

| 标签: 传感器

278.Journal Article

Zhang P, Huang T, You Q H, Zhang J Z, Li W W, Wu J D, Hu Z G, Chu J H
Effects of crystal orientation on electronic band structure and anomalous shift of higher critical point in VO2 thin films during the phase transition process
Journal of Physics D-Applied Physics, 2015, 48: 485302.

| 标签: 传感器

279.Journal Article

Zhang K Z, He J, Wang W J, Sun L, Yang P X, Chu J H
Cu2ZnSnS4 films fabricated by a simple sol-gel process without sulfurization
Journal of Infrared and Millimeter Waves, 2015, 34: 129-133.

| 标签: 传感器

280.Journal Article

Zhang J Z, Zhu J J, Deng Q L, Yu W L, Li Y W, Hu Z G, Meng X J, Chu J H
The optical properties of La doped BiGaO3 polycrystalline films
Journal of Infrared and Millimeter Waves, 2015, 34: 447-451.

| 标签: 传感器

281.Journal Article

Zhang J Z, Tong W Y, Zhu J J, Xu J Y, Duan Z H, Xu L P, Hu Z G, Duan C G, Meng X J, Zhu Z Q, Chu J H
Temperature-dependent lattice dynamics and electronic transitions in 0.93Pb(Zn1/3Nb2/3)O-3-0.07PbTiO(3) single crystals: Experiment and theory
Physical Review B, 2015, 91: 085201.

| 标签: 传感器

282.Journal Article

Zhang J, Deng H M, He J, Meng X K, Liu T T, Sun L, Yang P X, Chu J H
Structural and electrical properties of CuIn1-xAlxSe2 thin films prepared by radio-frequency magnetron sputtering process
Applied Surface Science, 2015, 326: 211-215.

| 标签: 传感器

283.Journal Article

Zhai X Z, Deng H M, Zhou W L, Yang P X, Chu J H, Zheng Z
Optical and magnetic properties of KBiFe2O5 thin films fabricated by chemical solution deposition
Materials Letters, 2015, 161: 423-426.

| 标签: 传感器

284.Journal Article

Zhai X Z, Deng H M, Zhou W L, Yang P X, Chu J H, Zheng Z
Structural, optical and magnetic tunability in KBiFe2O5 multiferroics
Rsc Advances, 2015, 5: 82351-82356.

| 标签: 传感器

285.Journal Article

Zhai X Z, Deng H M, Zhou W L, Yang P X, Chu J H
Strain-induced structural phase transition, ferromagnetic and optical properties of Bi1-xTbxFeO3 thin films
Journal of Physics D-Applied Physics, 2015, 48: 385002.

| 标签: 传感器

286.Journal Article

Zhai X Z, Deng H M, Yang P X, Chu J H
Effect of Tb-doping on structural, magnetic and optical properties of BiFeO3 films prepared by chemical solution deposition
Materials Letters, 2015, 158: 266-268.

| 标签: 传感器

287.Journal Article

Yue F Y, Tomm J W, Kruschke D, Ullrich B, Chu J H
Temperature dependence of the fundamental excitonic resonance in lead-salt quantum dots
Applied Physics Letters, 2015, 107: 022106.

| 标签: 传感器

288.Journal Article

Xu Y-G, Lv M, Chen J-X, Lin T, Yu G-L, Dai N, Chu J H
Zero-field spin splitting and high-field g-factor of an asymmetrical In0.53Ga0.47As/In0.52Al0.48 As quantum well
Journal of Infrared and Millimeter Waves, 2015, 34: 688-693.

| 标签: 传感器

289.Journal Article

Xu W F, Yang J, Bai W, Zhang Y Y, Tang K, Duan C G, Tang X D, Chu J H
Effects of aluminum substitution on the crystal structure and magnetic properties in Zn2Y-type hexaferrites
Journal of Applied Physics, 2015, 117: 17d909.

| 标签: 传感器

290.Journal Article

Xu L P, Jiang K, Zhang J Z, Xu G S, Hu Z G, Chu J H
Phase transitions and thermotropic phase boundaries in MnO2-doped (K0.5Na0.5)NbO3-0.05LiNbO(3) single crystals: Raman scattering evidence at elevated temperatures
Applied Physics Letters, 2015, 106: 122901.

| 标签: 传感器

291.Journal Article

Xing S M, Shan C, Jiang K, Zhu J J, Li Y W, Hu Z G, Chu J H
Optoelectronic properties and interband transition of La-doped BaSnO3 transparent conducting films determined by variable temperature spectral transmittance
Journal of Applied Physics, 2015, 117: 103107.

| 标签: 传感器

292.Journal Article

Wu J, Ouyang C, Zhou W, Gao Y Q, Hou Y, Huang Z M, Chu J H
Optical properties of small polaron in Mn1.56Co0.96Ni0.48O4 films investigated by temperature-dependent transmission spectra
Materials Research Express, 2015, 2: 026301.

| 标签: 传感器

293.Journal Article

Wenliang Z, Hongmei D, Jun H, Jian L, Huiyi C, Xuezhen Z, Pingxiong Y, Chu J H
Effects of Sm and Mn Co-Doping on Structural and Optical Properties of BiFeO3 Thin Films Prepared by Sol-Gel Technique
Materials Science Forum, 2015, 815: 149-153.

| 标签: 传感器

294.Journal Article

Wang X, Wang P, Wang J, Hu W, Zhou X, Guo N, Huang H, Sun S, Shen H, Lin T, Tang M, Liao L, Jiang A, Sun J, Meng X, Chen X, Lu W, Chu J H
Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics
Advanced Materials, 2015, 27: 6575.

| 标签: 传感器

295.Journal Article

Tian L, Sun J L, Wang J L, Meng X J, Chu J H
The performance of the free-standing P(VDF-TrFE) infrared detector
Journal of Infrared and Millimeter Waves, 2015, 34: 654-657.

| 标签: 传感器

296.Journal Article

Tian L, Sun J L, Wang J L, Meng X J, Chu J H
Diffuse Phase Transition and Relaxor-Like Behavior in P(VDF-TrFE-CFE) Films Irradiated with Different Electron Dose
Ferroelectrics, 2015, 488: 140-147.

| 标签: 传感器

297.Journal Article

Tian L, Meng X J, Yang J, Sun J L, Wang J L, Chu J H
Effects of Electron Irradiation on the Dielectric Behavior of Langmuir-Blodgett Terpolymer Films
Ferroelectrics, 2015, 478: 81-87.

| 标签: 传感器

298.Journal Article

Tian B B, Liu Y, Chen L F, Wang J L, Sun S, Shen H, Sun J L, Yuan G L, Fusil S, Garcia V, Dkhil B, Meng X J, Chu J H
Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors
Sci Rep, 2015, 5: 18297.

| 标签: 传感器

299.Journal Article

Tian B B, Chen L F, Liu Y, Bai X F, Wang J L, Sun S, Yuan G L, Sun J L, Dkhil B, Meng X J, Chu J H
Homogeneous switching mechanism in pure polyvinylidene fluoride ultrathin films
Physical Review B, 2015, 92: 060102.

| 标签: 传感器

300.Journal Article

Tian B B, Bai X F, Liu Y, Gemeiner P, Zhao X L, Liu B L, Zou Y H, Wang X D, Huang H, Wang J L, Sun S, Sun J L, Dkhil B, Meng X J, Chu J H
beta phase instability in poly(vinylidene fluoride/trifluoroethylene) thin films near beta relaxation temperature
Applied Physics Letters, 2015, 106: 092902.

| 标签: 传感器

301.Journal Article

Tao J, Zhang K, Zhang C, Chen L, Cao H, Liu J, Jiang J, Sun L, Yang P, Chu J H
A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency
Chem Commun (Camb), 2015, 51: 10337-10340.

| 标签: 传感器

302.Journal Article

Tang K, Bai W, Liu J, Yang J, Zhang Y Y, Duan C G, Tang X D, Chu J H
The effect of Mn doping contents on the structural, dielectric and magnetic properties of multifenoic Bi5Ti3FeO15 Aurivillius ceramics
Ceramics International, 2015, 41: S185-S190.

| 标签: 传感器

303.Journal Article

Shi K, Peng L, Li M J, Zhou Z Y, Jiang K, Zhang J Z, Hu Z G, Dong X L, Chu J H
Structural distortion, phonon behavior and electronic transition of Aurivillius layered ferroelectric CaBi2Nb2-xWxO9 ceramics
Journal of Alloys and Compounds, 2015, 653: 168-174.

| 标签: 传感器

304.Journal Article

Meng X K, Deng H M, Zhang J, Zhou W L, Tao J H, Sun L, Yue F Y, Yang P X, Chu J H
Structural and optical tunability by reaction time of selenization in Cu2FeSnSe4 thin films
Journal of Alloys and Compounds, 2015, 646: 68-72.

| 标签: 传感器

305.Journal Article

Meng X K, Deng H M, Sun L, Yang P X, Chu J H
Sulfurization temperature dependence of the structural transition in Cu2FeSnS4-based thin films
Materials Letters, 2015, 161: 427-430.

| 标签: 传感器

306.Journal Article

Meng X K, Deng H M, He J, Sun L, Yang P X, Chu J H
Synthesis, structure, optics and electrical properties of Cu2FeSnS4 thin film by sputtering metallic precursor combined with rapid thermal annealing sulfurization process
Materials Letters, 2015, 151: 61-63.

| 标签: 传感器

307.Journal Article

Meng X K, Cao H Y, Deng H M, Zhou W L, Zhang J, Huang L, Sun L, Yang P X, Chu J H
Structural, optical and electrical properties of Cu2FeSnSe4 and Cu(In,Al)Se-2 thin films
Materials Science in Semiconductor Processing, 2015, 39: 243-250.

| 标签: 传感器

308.Journal Article

Meng X K, Cao H Y, Deng H M, Zhou W L, Tao J H, Sun L, Yue F Y, Yang P X, Chu J H
Synthesis and characterization of Cu-based selenide photovoltaic materials: Cu2FeSnSe4 and Cu(In, Al)Se-2
Journal of Alloys and Compounds, 2015, 644: 354-362.

| 标签: 传感器

309.Journal Article

Lv M, Yu G L, Xu Y G, Chang Z G, Lin T, Zhao D G, Dai N, Chu J H, Lockwood D J
Dependence of spin dynamics on in-plane magnetic field in AlGaN/GaN quantum wells
Epl, 2015, 112: 67003.

| 标签: 传感器

310.Journal Article

Lv M, Wang H, Xu Y G, Yu G L, Zhang H H, Lin T, Hu G J, Dai N, Chu J H
Long phase coherence length and anisotropic magnetoresistance in MgZnO thin film
Journal of Applied Physics, 2015, 117: 155304.

| 标签: 传感器

311.Journal Article

Liu T T, Deng H M, Cao H Y, Zhou W L, Zhang J, Liu J, Yang P X, Chu J H
Structural, optical and electrical properties of Sb2Te3 films prepared by pulsed laser deposition
Journal of Crystal Growth, 2015, 416: 78-81.

| 标签: 传感器

312.Journal Article

Liu J, Deng H M, Zhai X Z, Cao H Y, Yang P X, Chu J H
Influence of Eu doping on structural and optical properties of BiFeO3 films deposited on quartz substrates by pulsed laser deposition method
Journal of Materials Science-Materials in Electronics, 2015, 26: 2977-2981.

| 标签: 传感器

313.Journal Article

Liu B L, Tian B B, Sun J L, Liu Y, Wang J L, Sun S, Meng X J, Chu J H
Confinement effect on coercive field in relaxor terpolymer nanowires
Applied Surface Science, 2015, 355: 473-476.

| 标签: 传感器

314.Journal Article

Li Y W, Qiao Q, Zhang J Z, Hu Z G, Chu J H
Influence of post-annealing on structural, electrical and optical properties of manganese oxide thin films grown by atomic layer deposition
Thin Solid Films, 2015, 574: 115-119.

| 标签: 传感器

315.Journal Article

Li C Q, Yao Q R, Zhang J Z, Hu Z G, Wang F F, Liu A Y, Shi W Z, Chu J H
Dramatic influence of Dy3+ doping on strain and domain structure in lead-free piezoelectric 0.935(Na1/2Bi1/2)TiO3-0.065BaTiO(3) ceramics
Aip Advances, 2015, 5: 127118.

| 标签: 传感器

316.Journal Article

Li C Q, Peng L, Wang P, Jiang K, Liu A Y, Hu Z G, Chu J H
Thermotropic phase transitions in Pb1-xSrx(Al1/3Nb2/3)(0.1)(Zr0.52Ti0.48)(0.9)O-3 ceramics: Temperature dependent dielectric permittivity and Raman scattering
Aip Advances, 2015, 5: 067122.

| 标签: 传感器

317.Journal Article

Jiang K, Zhao R, Zhang P, Deng Q, Zhang J, Li W, Hu Z, Yang H, Chu J H
Strain and temperature dependent absorption spectra studies for identifying the phase structure and band gap of EuTiO3 perovskite films
Phys Chem Chem Phys, 2015, 17: 31618-31623.

| 标签: 传感器

318.Journal Article

Huang Z, Zhou W, Ouyang C, Wu J, Zhang F, Huang J, Gao Y, Chu J H
High performance of Mn-Co-Ni-O spinel nanofilms sputtered from acetate precursors
Sci Rep, 2015, 5: 10899.

| 标签: 传感器

319.Journal Article

Huang T, Guo S, Xu L P, Chen C, Hu Z G, Luo H S, Chu J H
Low temperature structural variations of Na0.5Bi0.5TiO3-7% BaTiO3 single crystal: Evidences from optical ellipsometry and Raman scattering
Journal of Applied Physics, 2015, 117: 224103.

| 标签: 传感器

320.Journal Article

Huang L, Deng H M, He J, Meng X K, Tao J H, Cao H Y, Sun L, Yang P X, Chu J H
Cu content dependence of morphological, structural and optical properties for Cu2ZnGeS4 thin films synthesized by sulfurization of sputtered precursors
Materials Letters, 2015, 159: 1-4.

| 标签: 传感器

321.Journal Article

Huang L, Deng H M, He J, Meng X K, Sun L, Yang P X, Chu J H
Synthesis of Cu2ZnGeS4 thin film via sulfurization of RF magnetron sputtered precursor
Journal of Materials Science-Materials in Electronics, 2015, 26: 3984-3988.

| 标签: 传感器

322.Journal Article

Huang H, Wang P, Gao Y Q, Wang X D, Lin T, Wang J L, Liao L, Sun J L, Meng X J, Huang Z M, Chen X S, Chu J H
Highly sensitive phototransistor based on GaSe nanosheets
Applied Physics Letters, 2015, 107: 143112.

| 标签: 传感器

323.Journal Article

He X F, Xu J, Xu X F, Gu C C, Chen F, Wu B H, Wang C R, Xing H Z, Chen X S, Chu J H
Negative capacitance switching via VO2 band gap engineering driven by electric field
Applied Physics Letters, 2015, 106: 093106.

| 标签: 传感器

324.Journal Article

He X, Zeng Y, Xu X, Gu C, Chen F, Wu B, Wang C, Xing H, Chen X, Chu J H
Orbital change manipulation metal-insulator transition temperature in W-doped VO2
Phys Chem Chem Phys, 2015, 17: 11638-11646.

| 标签: 传感器

325.Journal Article

He J, Sun L, Chen Y, Jiang J C, Yang P X, Chu J H
Influence of sulfurization pressure on Cu2ZnSnS4 thin films and solar cells prepared by sulfurization of metallic precursors
Journal of Power Sources, 2015, 273: 600-607.

| 标签: 传感器

326.Journal Article

Guo S, Ding X J, Zhang J Z, Hu Z G, Ji X L, Wu L C, Song Z T, Chu J H
Intrinsic evolutions of dielectric function and electronic transition in tungsten doping Ge2Sb2Te5 phase change films discovered by ellipsometry at elevated temperatures
Applied Physics Letters, 2015, 106: 052105.

| 标签: 传感器

327.Journal Article

Guo H, Liang C, Hua X, Ma H, Guo W, Jing C, Chu J H
Elastic bending radius calculation of metallic attenuated total reflection GeO_2 hollow optical fibers
Journal of Optoelectronics·Laser, 2015, 26: 392-396.

| 标签: 传感器

328.Journal Article

Ge J, Chu J H, Yan Y, Jiang J, Yang P
Co-electroplated Kesterite Bifacial Thin-Film Solar Cells: A Study of Sulfurization Temperature
ACS Appl Mater Interfaces, 2015, 7: 10414-10428.

| 标签: 传感器

329.Journal Article

Ge J, Chu J H, Jiang J C, Yan Y F, Yang P X
The Interfacial Reaction at ITO Back Contact in Kesterite CZTSSe Bifacial Solar Cells
Acs Sustainable Chemistry & Engineering, 2015, 3: 3043-3052.

| 标签: 传感器

330.Conference

Gao Y, Huang Z, Hou Y, Wu J, Zhou W, Ouyang C, Chu J H
Infrared ellipsometric spectroscopy of Mn1.56Co0.96Ni0.48O4 thin films with different layers
2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),IEEE, Hong Kong, China, 23-28 Aug. 2015.

| 标签: 传感器

331.Journal Article

Dong Y C, He J, Tao J H, Sun L, Yang P X, Chu J H
Influence of different S/Se ratio on the properties of Cu2Sn(SxSe1-x)(3) thin films fabricated by annealing stacked metal precursors
Journal of Materials Science-Materials in Electronics, 2015, 26: 6723-6729.

| 标签: 传感器

332.Journal Article

Dong Y C, He J, Sun L, Chen Y, Yang P X, Chu J H
Effect of sulfurization temperature on properties of Cu2SnS3 thin films and solar cells prepared by sulfurization of stacked metallic precursors
Materials Science in Semiconductor Processing, 2015, 38: 171-176.

| 标签: 传感器

333.Journal Article

Dong Y C, He J, Li X R, Zhou W L, Chen Y, Sun L, Yang P X, Chu J H
Synthesis and optimized sulfurization time of Cu2SnS3 thin films obtained from stacked metallic precursors for solar cell application
Materials Letters, 2015, 160: 468-471.

| 标签: 传感器

334.Journal Article

Deng Q L, Zhang J Z, Huang T, Xu L P, Jiang K, Li Y W, Hu Z G, Chu J H
Optoelectronic properties and polar nano-domain behavior of sol-gel derived K0.5Na0.5Nb1-xMnxO3-delta nanocrystalline films with enhanced ferroelectricity
Journal of Materials Chemistry C, 2015, 3: 8225-8234.

| 标签: 传感器

335.Journal Article

Cong W T, Tang Z, Zhao X G, Chu J H
Enhanced magnetic anisotropies of single transition-metal adatoms on a defective MoS2 monolayer
Sci Rep, 2015, 5: 9361.

| 标签: 传感器

336.Journal Article

Cong R, Hu G J, Yu G L, Chu J H, Dai N
Effect of polymer content on the optical properties of PbZr0.4 Ti-0.6 O-3 multilayers
Journal of Infrared and Millimeter Waves, 2015, 34: 297-300.

| 标签: 传感器

337.Journal Article

Chen L L, Deng H M, Tao J H, Zhou W L, Sun L, Yue F Y, Yang P X, Chu J H
Influence of annealing temperature on structural and optical properties of Cu2MnSnS4 thin films fabricated by sol-gel
Journal of Alloys and Compounds, 2015, 640: 23-28.

| 标签: 传感器

338.Journal Article

Chen L L, Deng H M, Tao J H, Cao H Y, Huang L, Sun L, Yang P X, Chu J H
Synthesis and characterization of earth-abundant Cu2MnSnS4 thin films using a non-toxic solution-based technique
Rsc Advances, 2015, 5: 84295-84302.

| 标签: 传感器

339.Journal Article

Chen L L, Deng H M, Cui J Y, Tao J H, Zhou W L, Cao H Y, Sun L, Yang P X, Chu J H
Composition dependence of the structure and optical properties of Cu2MnxZn1-xSnS4 thin films
Journal of Alloys and Compounds, 2015, 627: 388-392.

| 标签: 传感器

340.Journal Article

Cao H Y, Deng H M, Zhou W L, Tao J H, Chen L L, Huang L, Sun L, Yue F Y, Yang P X, Chu J H
Investigation of microstructural and optical properties of Cu(In, Al)Se-2 thin films with various copper content
Journal of Alloys and Compounds, 2015, 651: 208-213.

| 标签: 传感器

341.Journal Article

Cao H Y, Deng H M, Tao J H, Zhou W L, Meng X K, Sun L, Yang P X, Chu J H
Microstructural and morphological properties of sputtered Cu(In, Al)Se-2 thin films for solar cell applications
Materials Letters, 2015, 157: 42-44.

| 标签: 传感器

342.Journal Article

Cao H Y, Deng H M, Cui J Y, Meng X K, Zhnag J, Sun L, Yang P X, Chu J H
The influence of selenization temperatures on the structural and optical properties of Cu (In, Al) Se-2 thin films
Journal of Infrared and Millimeter Waves, 2015, 34: 726-730.

| 标签: 传感器

343.Journal Article

Cai Z H, Narang P, Atwater H A, Chen S Y, Duan C G, Zhu Z Q, Chu J H
Cation-Mutation Design of Quaternary Nitride Semiconductors Lattice-Matched to GaN
Chemistry of Materials, 2015, 27: 7757-7764.

| 标签: 传感器

344.Journal Article

Bai W, Chen C, Yang J, Zhang Y, Qi R, Huang R, Tang X, Duan C G, Chu J H
Dielectric behaviors of Aurivillius Bi5Ti3Fe0.5Cr0.5O15 multiferroic polycrystals: Determining the intrinsic magnetoelectric responses by impedance spectroscopy
Sci Rep, 2015, 5: 17846.

| 标签: 传感器

345.Journal Article

Deng, Dehui; Chen, Xiaoqi; Yu, Liang; Wu, Xing; Liu, Qingfei; Liu, Yun; Yang, Huaixin; Tian, Huanfang; Hu, Yongfeng; Du, Peipei; Si, Rui; Wang, Junhu; Cui, Xiaoju; Li, Haobo; Xiao, Jianping; Xu, Tao; Deng, Jiao; Yang, Fan; Duchesne, Paul N.; Zhang, Peng; Zhou, Jigang; Sun, Litao; Li, Jianqi; Pan, Xiulian; Bao, Xinhe
A Single Iron Site Confined in A Graphene Matrix for the Catalytic Oxidation of Benzene at Room Temperature
In: Science Advances, vol. 1, no. 11, 2015, ISSN: 2375-2548.

Links | BibTeX 标签: 原位电镜           

<Go to ISI>://WOS:000216604200001

doi:10.1126/sciadv.1500462


@article{RN85,
title = {A Single Iron Site Confined in A Graphene Matrix for the Catalytic Oxidation of Benzene at Room Temperature},
author = {Dehui Deng and Xiaoqi Chen and Liang Yu and Xing Wu and Qingfei Liu and Yun Liu and Huaixin Yang and Huanfang Tian and Yongfeng Hu and Peipei Du and Rui Si and Junhu Wang and Xiaoju Cui and Haobo Li and Jianping Xiao and Tao Xu and Jiao Deng and Fan Yang and Paul N. Duchesne and Peng Zhang and Jigang Zhou and Litao Sun and Jianqi Li and Xiulian Pan and Xinhe Bao},
url = {<Go to ISI>://WOS:000216604200001},
doi = {10.1126/sciadv.1500462},
issn = {2375-2548},
year  = {2015},
date = {2015-01-01},
urldate = {2015-01-01},
journal = {Science Advances},
volume = {1},
number = {11},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}


346.Conference

Liu, S. B.; Wang, W.; Yuan, T. Y.; Zhang, Y. Y.; Zhong, N.; Qi, R. J.; Huang, R.; Zhang, J.; Wu, X.
Reliability Investigation of Flexible Graphene-Based Actuator
IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) , 2015.

Links | BibTeX 标签: 可靠性石墨烯           


@conference{RN70,
title = {Reliability Investigation of Flexible Graphene-Based Actuator},
author = {S. B. Liu and W. Wang and T. Y. Yuan and Y. Y. Zhang and N. Zhong and R. J. Qi and R. Huang and J. Zhang and X. Wu},
doi = {10.1109/ipfa.2015.7224413},
year  = {2015},
date = {2015-01-01},
urldate = {2015-01-01},
booktitle = {IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) },
journal = {2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)},
pages = {411-14},
keywords = {可靠性, 石墨烯},
pubstate = {published},
tppubtype = {conference}
}


347.Journal Article

Liu, S. Y.; Yang, C.; Sun, W. F.; Qian, Q. S.; Huang, Y.; Wu, X.; Wu, M. J.; Yang, Q. L.; Sun, L. T.
Repetitive-Avalanche-Induced Electrical Parameters Shift for 4H-SiC Junction Barrier Schottky Diode
In: IEEE Transactions on Electron Devices, vol. 62, no. 2, pp. 601-605, 2015, ISSN: 0018-9383.

Abstract | Links | BibTeX 标签: 可靠性           

The electrical parameters shift of 4H-SiC junction barrier Schottky diode under the repetitive avalanche current stress has been experimentally investigated. Using technical computer-aided design simulation and high resolution transmission electron microscopy analysis at atomic scale, it has been demonstrated that the forward voltage drop of the device has no variation during the stress due to the intactness of active area. However, the reverse breakdown voltage is gradually increased with the stress time, which results from hot electron injection and trapping into the SiO2 dielectric at the outer edge of p-type junction termination.

@article{RN17,
title = {Repetitive-Avalanche-Induced Electrical Parameters Shift for 4H-SiC Junction Barrier Schottky Diode},
author = {S. Y. Liu and C. Yang and W. F. Sun and Q. S. Qian and Y. Huang and X. Wu and M. J. Wu and Q. L. Yang and L. T. Sun},
doi = {10.1109/ted.2014.2375821},
issn = {0018-9383},
year  = {2015},
date = {2015-01-01},
urldate = {2015-01-01},
journal = {IEEE Transactions on Electron Devices},
volume = {62},
number = {2},
pages = {601-605},
abstract = {The electrical parameters shift of 4H-SiC junction barrier Schottky diode under the repetitive avalanche current stress has been experimentally investigated. Using technical computer-aided design simulation and high resolution transmission electron microscopy analysis at atomic scale, it has been demonstrated that the forward voltage drop of the device has no variation during the stress due to the intactness of active area. However, the reverse breakdown voltage is gradually increased with the stress time, which results from hot electron injection and trapping into the SiO2 dielectric at the outer edge of p-type junction termination.},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}

348.Journal Article

Tan, Y. Y.; Yang, Q. L.; Sim, K. S.; Sun, Li Tao; Wu, Xing
Cu-Al Intermetallic Compound Investigation using Ex-Situ Post Annealing and In-Situ Annealing
In: Microelectronics Reliability, vol. 55, no. 11, pp. 2316-2323, 2015, ISSN: 0026-2714.

Links | BibTeX 标签: 原位电镜可靠性           


@article{RN57,
title = {Cu-Al Intermetallic Compound Investigation using Ex-Situ Post Annealing and In-Situ Annealing},
author = {Y. Y. Tan and Q. L. Yang and K. S. Sim and Li Tao Sun and Xing Wu},
doi = {10.1016/j.microrel.2015.06.050},
issn = {0026-2714},
year  = {2015},
date = {2015-01-01},
urldate = {2015-01-01},
journal = {Microelectronics Reliability},
volume = {55},
number = {11},
pages = {2316-2323},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}


349.Journal Article

Zeng, Wei; Zhang, Guanhua; Wu, Xing; Zhang, Kang; Zhang, Hang; Hou, Sucheng; Li, Chengchao; Wang, Taihong; Duan, Huigao
Construction of Hierarchical CoS Nanowire@NiCo2S4 Nanosheet Arrays via One-Step ion Exchange for High-Performance Supercapacitors
In: Journal of Materials Chemistry A, vol. 3, no. 47, pp. 24033-24040, 2015, ISSN: 2050-7488

Links | BibTeX 标签: 传感器           


@article{RN54,
title = {Construction of Hierarchical CoS Nanowire@NiCo2S4 Nanosheet Arrays via One-Step ion Exchange for High-Performance Supercapacitors},
author = {Wei Zeng and Guanhua Zhang and Xing Wu and Kang Zhang and Hang Zhang and Sucheng Hou and Chengchao Li and Taihong Wang and Huigao Duan},
doi = {10.1039/c5ta05934h},
issn = {2050-7488},
year  = {2015},
date = {2015-01-01},
urldate = {2015-01-01},
journal = {Journal of Materials Chemistry A},
volume = {3},
number = {47},
pages = {24033-24040},
keywords = {传感器},
pubstate = {published},
tppubtype = {article}
}


350.Journal Article

Zou Y H, Han L, Yuan G L, Liu B L, Zhao X L, Tian B B, Wang J L, Sun S, Sun J L, Meng X J, Chu J H
Enhanced ferroelectric and dielectric properties of the P(VDF-TrFE)/Ag nanoparticles composite thin films
Journal of Materials Science-Materials in Electronics, 2014, 25: 3461-3465.

| 标签: 传感器

351.Journal Article

Zhu X J, Ma J H, Yao N J, Liang Y, Jiang J C, Wang S L, Chu J H
Preparation of CuInSe2 thin films by a chemical solution method
Journal of Infrared and Millimeter Waves, 2014, 33: 231-236.

| 标签: 传感器

352.Journal Article

Zhu L P, Deng H M, Sun L, Yang J, Yang P X, Chu J H
Optical properties of multiferroic LuFeO3 ceramics
Ceramics International, 2014, 40: 1171-1175.

| 标签: 传感器

353.Journal Article

Zhu L P, Deng H M, Liu J, Sun L, Yang P X, Jiang A Q, Chu J H
Preparation and characterization of Bi-doped LuFeO3 thin films grown on LaNiO3 substrate
Journal of Crystal Growth, 2014, 387: 6-9.

| 标签: 传感器

354.Journal Article

Zhu J J, Zhang J Z, Xu G S, Zhang X L, Hu Z G, Chu J H
Electronic transitions and dielectric functions of relaxor ferroelectric Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystals: Temperature dependent spectroscopic study
Applied Physics Letters, 2014, 104: 132903.

| 标签: 传感器

355.Journal Article

Zhou W L, Deng H M, Yang P X, Chu J H
Structural phase transition, narrow band gap, and room-temperature ferromagnetism in [KNbO3](1-x)[BaNi1/2Nb1/2O3-delta](x) ferroelectrics
Applied Physics Letters, 2014, 105: 111904.

| 标签: 传感器

356.Journal Article

Zhao X L, Wang J L, Tian B B, Liu B L, Zou Y H, Wang X D, Sun S, Sun J L, Meng X J, Chu J H
Temperature dependence of electronic transport property in ferroelectric polymer films
Applied Surface Science, 2014, 316: 497-500.

| 标签: 传感器

357.Journal Article

Zhao X L, Wang J L, Tian B B, Liu B L, Wang X D, Sun S, Zou Y H, Lin T, Sun J L, Meng X J, Chu J H
Enhanced piezoelectric response in the artificial ferroelectric polymer multilayers
Applied Physics Letters, 2014, 105: 222907.

| 标签: 传感器

358.Journal Article

Zhao X L, Wang J L, Liu B L, Tian B B, Zou Y H, Sun S, Sun J L, Meng X J, Chu J H
Enhanced dielectric and ferroelectric properties in the artificial polymer multilayers
Applied Physics Letters, 2014, 104: 082903.

| 标签: 传感器

359.Journal Article

Zhao X L, Tian B B, Liu B L, Wang J L, Han L, Sun J L, Meng X J, Chu J H
Self-polarization in ultrathin Langmuir-Blodgett polymer films
Thin Solid Films, 2014, 551: 171-173.

| 标签: 传感器

360.Journal Article

Zhang Y G, Tang Z, Zhao X G, Cheng G D, Tu Y, Cong W T, Peng W, Zhu Z Q, Chu J H
A neutral oxygen-vacancy center in diamond: A plausible qubit candidate and its spintronic and electronic properties
Applied Physics Letters, 2014, 105: 052107.

| 标签: 传感器

361.Journal Article

Zhang X L, Zhu J J, Zhang J Z, Xu G S, Hu Z G, Chu J H
Photoluminescence study on polar nanoregions and structural variations in Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystals
Optics Express, 2014, 22: 21903-21911.

| 标签: 传感器

362.Journal Article

Zhang S, Zhang J Z, Han M J, Li Y W, Hu Z G, Chu J H
Temperature dependent near infrared ultraviolet range dielectric functions of nanocrystalline (Na0.5Bi0.5)(1-x)Ce-x(Ti0.99Fe0.01)O-3 films
Applied Physics Letters, 2014, 104: 041106.

| 标签: 传感器

363.Journal Article

Zhang L B, Hou Y, Zhou W, Huang Z M, Chu J H
Development of bolometer detector array made of Mn-Co-Ni-O thin films
Journal of Infrared and Millimeter Waves, 2014, 33: 359-363.

| 标签: 传感器

364.Journal Article

Zhang K Z, Tao J H, Liu J F, He J, Dong Y C, Sun L, Yang P X, Chu J H
Compact Cu2ZnSn(S,Se)(4) Thin Films Fabricated by a Simple Sol-Gel Technique
Journal of Inorganic Materials, 2014, 29: 781-784.

| 标签: 传感器

365.Journal Article

Zhang K Z, Tao J H, He J, Wang W J, Sun L, Yang P X, Chu J H
Composition control in Cu2ZnSnS4 thin films by a sol-gel technique without sulfurization
Journal of Materials Science-Materials in Electronics, 2014, 25: 2703-2709.

| 标签: 传感器

366.Journal Article

Zhang J Z, Ding H C, Zhu J J, Li Y W, Hu Z G, Duan C G, Meng X J, Chu J H
Electronic structure and optical responses of nanocrystalline BiGaO3 films: A combination study of experiment and theory
Journal of Applied Physics, 2014, 115: 083110.

| 标签: 传感器

367.Journal Article

Zhai X Z, Jia H M, Zhang Y E, Lei Y, Wei J, Gao Y H, Chu J H, He W W, Yin J J, Zheng Z
In situ fabrication of Cu2ZnSnS4 nanoflake thin films on both rigid and flexible substrates
Crystengcomm, 2014, 16: 6244-6249.

| 标签: 传感器

368.Journal Article

Xu Y G, Lv M, Wang R, Zhou Y M, Lin T, Chang Z G, Yu G L, Dai N, Chu J H
Spin susceptibility of two-dimensional electron system in HgTe surface quantum well
Applied Physics Letters, 2014, 105: 062404.

| 标签: 传感器

369.Journal Article

Xu W F, Yang J, Shen Y D, Bai W, Zhang Y Y, Liu J, Tang K, Wang Z, Duan C G, Tang X D, Chu J H
Magnetocaloric effect in multiferroic Y-type hexaferrite Ba0.5Sr1.5Zn2(Fe0.92Al0.08)(12)O-22
Aip Advances, 2014, 4: 067122.

| 标签: 传感器

370.Journal Article

Xu L P, Zhang L L, Zhang X L, Zhang J Z, Hu Z G, Yu J, Chu J H
Phase transformations in multiferroic Bi1-xLaxFe1-yTiyO3 ceramics probed by temperature dependent Raman scattering
Journal of Applied Physics, 2014, 116: 164103.

| 标签: 传感器

371.Journal Article

Xu J, Lu A, Wang C, Zou R, Liu X, Wu X, Wang Y, Li S, Sun L, Chen X, Oh H, Baek H, Yi G-C, Chu J H
ZnSe-Based Longitudinal Twinning Nanowires
Advanced Engineering Materials, 2014, 16: 459-465.

| 标签: 传感器

372.Journal Article

Xiong Z, Zhang Y, Fu S, Zhang Z, Xu G, Feng Z, Chu J H, Verlinden P J
Crystal growth, microstructure characterization and cell performance analysis of casting-monocrystalline ingots with<111>orientation
proceedings of the 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), F 8-13 June 2014.

| 标签: 传感器

373.Journal Article

Wu J, Huang Z M, Zhou W, Ouyang C, Hou Y, Gao Y Q, Chen R, Chu J H
Investigation of cation distribution, electrical, magnetic properties and their correlation in Mn2-xCo2xNi1-xO4 films
Journal of Applied Physics, 2014, 115: 113703.

| 标签: 传感器

374.Journal Article

Wu G, Deng H M, Wang W J, Zhang K Z, Cao H Y, Yang P X, Chu J H
Effect of Co doping on the structure, optical and magnetic properties of LaAlO3 thin films
Journal of Materials Science-Materials in Electronics, 2014, 25: 3137-3140.

| 标签: 传感器

375.Journal Article

Wang W J, He J, Zhang K Z, Tao J H, Sun L, Chen Y, Yang P X, Chu J H
Structure and Optical Properties of CuInSe2 and Cu0.9In0.9Zn0.2Se2 Thin Films Deposited by One-step Radio-frequency Magnetron Sputtering
Journal of Inorganic Materials, 2014, 29: 1223-1227.

| 标签: 传感器

376.Journal Article

Wang J L, Liu B L, Zhao X L, Tian B B, Zou Y H, Sun S, Shen H, Sun J L, Meng X J, Chu J H
Transition of the polarization switching from extrinsic to intrinsic in the ultrathin polyvinylidene fluoride homopolymer films
Applied Physics Letters, 2014, 104: 182907

| 标签: 传感器

377.Journal Article

Tong J, Huang J, Huang Z, Chu J H
Room temperature InGaAs hot electron detector for THz/subTHz regions
proceedings of the Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013, SuZhou, China, F Oct 20-29, 2013, 2014 [C]. 2014.

| 标签: 传感器

378.Journal Article

Tao J H, Liu J F, He J, Zhang K Z, Jiang J C, Sun L, Yang P X, Chu J H
Synthesis and characterization of Cu2ZnSnS4 thin films by the sulfurization of co-electrodeposited Cu-Zn-Sn-S precursor layers for solar cell applications
Rsc Advances, 2014, 4: 23977-23984.

| 标签: 传感器

379.Journal Article

Tao J H, He J, Zhang K Z, Liu J F, Dong Y C, Sun L, Yang P X, Chu J H
Effect of deposition potential on the properties of Cu2ZnSnS4 films for solar cell applications
Materials Letters, 2014, 135: 8-10.

| 标签: 传感器

380.Journal Article

Tao B R, Miao F J, Zhang J, Chu J H
The effect of neodymium ion doping on the photocatalytic properties of nano-titanium dioxide
Journal of Infrared and Millimeter Waves, 2014, 33: 355-358.

| 标签: 传感器

381.Journal Article

Shuo S, Peng Z, Jianfeng L, Yuanke L, Jianlu W, Shujiang Z, Yangjun X, Xiangjian M, Duowang F, Chu J H
Synthetically controlling the optoelectronic properties of dithieno [2,3-d:2',3'-d'-d'] benzo [1,2b:4,5-b'] dithiophene-alt-diketopyrro lopyrroleconjugated polymers for efficient solar cells
Journal of Materials Chemistry A, 2014, 2: 15316-15325.

| 标签: 传感器

382.Journal Article

Shan C, Huang T, Zhang J Z, Han M J, Li Y W, Hu Z G, Chu J H
Optical and Electrical Properties of Sol Gel Derived Ba1-xLax SnO3 Transparent Conducting Films for Potential Optoelectronic Applications
Journal of Physical Chemistry C, 2014, 118: 6994-7001.

| 标签: 传感器

383.Journal Article

Shan C, Chang P, Shi K, Li Y W, Hu Z G, Chu J H
Optical phonon behaviors and unstable polar mode in transparent conducting Ba1-xLaxSnO3 films from temperature dependent far-infrared reflectance spectra
Rsc Advances, 2014, 4: 34987-34991.

| 标签: 传感器

384.Journal Article

Qiao Q, Lu H Y, Ge J, Xi X, Chen R L, Yang J, Zhu J B, Shi Z R, Chu J H
18.5% efficient AlOx/SiNy rear passivated industrial multicrystalline silicon solar cells
Applied Surface Science, 2014, 305: 439-444.

| 标签: 传感器

385.Journal Article

Peng C, Rao F, Wu L C, Song Z T, Gu Y F, Zhou D, Song H J, Yang P X, Chu J H
Homogeneous phase W-Ge-Te material with improved overall phase-change properties for future nonvolatile memory
Acta Materialia, 2014, 74: 49-57.

| 标签: 传感器

386.Journal Article

Miao F J, Tao B R, Hu Z G, Chu J H
Preparation and performance of micro/nano-scale Bi3.15Nd0.85Ti3O12/Si-MCP ferroelectric thin film arrays
Journal of Infrared and Millimeter Waves, 2014, 33: 139.

| 标签: 传感器

387.Journal Article

Meng X K, Deng H M, He J, Zhu L P, Sun L, Yang P X, Chu J H
Synthesis of Cu2FeSnSe4 thin film by selenization of RF magnetron sputtered precursor
Materials Letters, 2014, 117: 1-3.

| 标签: 传感器

388.Journal Article

Meng L, LinGuolin Y, Yonggang X, Tie L, Ning D, Chu J H
Magnetotransport Investigations of Two-Dimensional Electron Gas for AlGaN/GaN Heterostructure
Advanced Materials Research, 2014, 1058: 132-135.

| 标签: 传感器

389.Journal Article

Ma Z X, Liao X B, Kong G L, Chu J H
Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix (Retraction of vol 42, pg 367, 2000)
Materials Letters, 2014, 120: 299-299.

| 标签: 传感器

390.Journal Article

Luo C H, Shen Z T, Meng X J, Han L, Sun S, Lin T, Sun J L, Peng H, Chu J H
Pyromellitic Diimide-Benzodithiophene Copolymer for Polymer Solar Cells: Effect of Side Chain Length and Thiophene pi-Bridge on Optical and Electronic Properties
Molecular Crystals and Liquid Crystals, 2014, 604: 151-163.

| 标签: 传感器

391.Journal Article

Luo C H, Shen Z T, Meng X J, Han L, Sun S, Lin T, Sun J L, Peng H, Chu J H
Design and synthesis of pyromellitic diimide-based donor-acceptor conjugated polymers for photovoltaic application
Polymers for Advanced Technologies, 2014, 25: 809-815.

| 标签: 传感器

392.Journal Article

Luo C H, Meng X J, Han L, Sun S, Lin T, Sun J L, Peng H, Chu J H
n-Type pyromellitic diimide-benzodithiophene-containing conjugated polymers for all-polymer solar cells with high open-circuit voltage
Synthetic Metals, 2014, 196: 110-116.

| 标签: 传感器

393.Journal Article

Luo C H, Bi W X, Deng S M, Zhang J, Chen S Y, Li B, Liu Q C, Peng H, Chu J H
Indolo[3,2,1-jk]carbazole Derivatives-Sensitized Solar Cells: Effect of pi-Bridges on the Performance of Cells
Journal of Physical Chemistry C, 2014, 118: 14211-14217.

| 标签: 传感器

394.Journal Article

Liu X Z, Xu Y G, Yu G L, Lin T, Guo S L, Chu J H, Zhang Y G
The zero field spin splitting and Zeeman splitting in the In0.53Ga0.47As/In0.52Al0.48As quantum well
Journal of Infrared and Millimeter Waves, 2014, 33: 134-138.

| 标签: 传感器

395.Journal Article

Liu J, Deng H M, Zhu L P, Zhang K Z, Meng X K, Cao H Y, Yang P X, Chu J H
Structure, optical and magnetic properties of Bi1-xEuxFeO3 films fabricated by pulsed laser deposition
Applied Surface Science, 2014, 316: 78-81.

| 标签: 传感器

396.Journal Article

Liu J, Deng H M, Zhai X Z, Lin T, Meng X J, Zhang Y Y, Zhou W L, Yang P X, Chu J H
Influence of Zn doping on structural, optical and magnetic properties of BiFeO3 films fabricated by the sol-gel technique
Materials Letters, 2014, 133: 49-52.

| 标签: 传感器

397.Journal Article

Liu J, Deng H M, Cao H Y, Zhai X Z, Tao J H, Sun L, Yang P X, Chu J H
Influence of rare-earth elements doping on structure and optical properties of BiFe03 thin films fabricated by pulsed laser deposition
Applied Surface Science, 2014, 307: 543-547.

| 标签: 传感器

398.Journal Article

Liu B L, Tian B B, Geiger S, Hu Z G, Zhao X L, Zou Y H, Wang J L, Sun J L, Sun S, Dkhil B, Meng X J, Chu J H
The intermediate temperature T* revealed in relaxor polymers
Applied Physics Letters, 2014, 104: 222907

| 标签: 传感器

399.Journal Article

Li X X, Deng H M, Zhang J Z, Yang P X, Chu J H
Bismuth composition dependence of properties of Bi-x FeO3 thin films
Journal of Infrared and Millimeter Waves, 2014, 33: 19.

| 标签: 传感器

400.Journal Article

Li X R, Han M J, Zhang X L, Shan C, Hu Z G, Zhu Z Q, Chu J H
Temperature-dependent band gap, interband transitions, and exciton formation in transparent p-type delafossite CuCr1-xMgxO2 films
Physical Review B, 2014, 90: 035308.

| 标签: 传感器

401.Journal Article

Li X R, Han M J, Wu J D, Shan C, Hu Z G, Zhu Z Q, Chu J H
Low voltage tunneling magnetoresistance in CuCrO2-based semiconductor heterojunctions at room temperature
Journal of Applied Physics, 2014, 116: 223701.

| 标签: 传感器

402.Journal Article

Li X R, Han M J, Chang P, Hu Z G, Li Y W, Zhu Z Q, Chu J H
Temperature dependence of terahertz optical characteristics and carrier transport dynamics in p-type transparent conductive CuCr1-xMgxO2 semiconductor films
Applied Physics Letters, 2014, 104: 012103.

| 标签: 传感器

403.Journal Article

Kong H, He J, Meng X K, Zhu L P, Tao J H, Sun L, Yang P X, Chu J H
Influence of Se supply for selenization of Cu(In,Ga)Se-2 precursors deposited by sputtering from a single quaternary target
Materials Letters, 2014, 118: 21-23.

| 标签: 传感器

404.Journal Article

Kong H, He J, Huang L, Zhu L P, Sun L, Yang P X, Chu J H
Effect of working pressure on growth of Cu(In,Ga)Se-2 thin film deposited by sputtering from a single quaternary target
Materials Letters, 2014, 116: 75-78.

| 标签: 传感器

405.Journal Article

Jing C B, Guo H, Hu Z G, Yang P X, Chu J H, Liu A Y, Shi Y W
Metallic attenuated total reflection infrared hollow fibers for robust optical transmission systems
Applied Physics Letters, 2014, 105: 011102.

| 标签: 传感器

406.Conference

Jing C, Bai W, Hu Z, Yang P, Liu A, Lin F, Shi Y, Chu J H
Low-temperature, low-cost growth of robust ATR GeO2 hollow fibers based on copper capillary tubes for transmission of CO2 laser light
proceedings of the Optical Fibers and Sensors for Medical Diagnostics and Treatment Applications Xiv, San Francisco, CA, F Feb 01-02, 2014, 2014 Spie.

| 标签: 传感器

407.Journal Article

Jiang P P, Zhang X L, Chang P, Hu Z G, Bai W, Li Y W, Chu J H
Spin-phonon interactions of multiferroic Bi4Ti3O12-BiFeO3 ceramics: Low-temperature Raman scattering and infrared reflectance spectra investigations
Journal of Applied Physics, 2014, 115: 144101.

| 标签: 传感器

408.Journal Article

Jiang P P, Duan Z H, Xu L P, Zhang X L, Li Y W, Hu Z G, Chu J H
Phase transformation in multiferroic Bi5Ti3FeO15 ceramics by temperature-dependent ellipsometric and Raman spectra: An interband electronic transition evidence
Journal of Applied Physics, 2014, 115: 083101.

| 标签: 传感器

409.Journal Article

Huang Z-P, Zhao S-R, Sun L, Sun P-C, Zhang C-J, Wu Y-H, Cao H, Wang S-L, Hu Z-G, Yang P-X, Chu J H
Voltage dependent quantum efficiency measurement in property study of thin film solar cells
Journal of Infrared and Millimeter Waves, 2014, 33: 395-399.

| 标签: 传感器

410.Journal Article

Huang Z, Tong J, Huang J, Zhou W, Wu J, Gao Y, Lu J, Lin T, Wei Y, Chu J H
Room-temperature photoconductivity far below the semiconductor bandgap
Adv Mater, 2014, 26: 6594-6598.

| 标签: 传感器

411.Conference

Huang Z, OuYang C, Zhou W, Tong J, Huang J, Wu J, Gao Y, Chu J H
Progress on Mn-Co-Ni-O infrared thin films and detectors
proceedings of the 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), F 14-19 Sept. 2014, 2014.

| 标签: 传感器

412.Journal Article

Huang T, Hu Z G, Xu G S, Zhang X L, Zhang J Z, Chu J H
Inherent optical behavior and structural variation in Na0.5Bi0.5TiO3-6% BaTiO3 revealed by temperature dependent Raman scattering and ultraviolet-visible transmittance
Applied Physics Letters, 2014, 104: 111908.

| 标签: 传感器

413.Journal Article

Huang R, Ding H C, Liang W I, Gao Y C, Tang X D, He Q, Duan C G, Zhu Z Q, Chu J H, Fisher C A J, Hirayama T, Ikuhara Y, Chu Y H
Atomic-Scale Visualization of Polarization Pinning and Relaxation at Coherent BiFeO3/LaAlO3 Interfaces
Advanced Functional Materials, 2014, 24: 793-799.

| 标签: 传感器

414.Conference

Huang J, Tong J, Huang Z, Chu J H
Coherent CdTe Terahertz Source for High-Resolutional Imaging
proceedings of the Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013, SuZhou, China, F Oct 20-29, 2013, 2014.

| 标签: 传感器

415.Journal Article

Hong X K, Liu Y S, Zhang D B, Feng J F, Chu J H
Microstructures and electrical properties of Ba0.9Sr0.1Ti0.99Mn0.01O3 multilayers
Journal of Alloys and Compounds, 2014, 613: 244-248.

| 标签: 传感器

416.Journal Article

He X, Xu T, Xu X, Zeng Y, Xu J, Sun L, Wang C, Xing H, Wu B, Lu A, Liu D, Chen X, Chu J H
In situ atom scale visualization of domain wall dynamics in VO2 insulator-metal phase transition
Sci Rep, 2014, 4: 6544.

| 标签: 传感器

417.Journal Article

He J, Tao J H, Meng X K, Dong Y C, Zhang K Z, Sun L, Yang P X, Chu J H
Effect of selenization time on the growth of Cu2ZnSnSe4 thin films obtained from rapid thermal processing of stacked metallic layers
Materials Letters, 2014, 126: 1-4.

| 标签: 传感器

418.Journal Article

He J, Sun L, Chen Y, Jiang J C, Yang P X, Chu J H
Cu2ZnSnS4 thin film solar cell utilizing rapid thermal process of precursors sputtered from a quaternary target: a promising application in industrial processes
Rsc Advances, 2014, 4: 43080-43086.

| 标签: 传感器

419.Journal Article

Guo S, Hu Z G, Ji X L, Huang T, Zhang X L, Wu L C, Song Z T, Chu J H
Temperature and concentration dependent crystallization behavior of Ge2Sb2Te5 phase change films: tungsten doping effects
Rsc Advances, 2014, 4: 57218-57222.

| 标签: 传感器

420.Journal Article

Ge J, Jiang J C, Yang P X, Peng C, Huang Z P, Zuo S H, Yang L H, Chu J H
A 5.5% efficient co-electrodeposited ZnO/CdS/Cu2ZnSnS4/Mo thin film solar cell
Solar Energy Materials and Solar Cells, 2014, 125: 20-26.

| 标签: 传感器

421.Conference

Ge J, Jiang J, Yang P, Chu J H, Yan Y
Co-electroplated CU2ZnSnS4 Thin-film Solar Cells: the Role of Precursor Metallic Composition
2014 IEEE proceedings of the 40th IEEE Photovoltaic Specialists Conference (PVSC) Denver, CO, USA Jun 08-13, 2014.

| 标签: 传感器

422.Journal Article

Ge J, Chu J H, Jiang J, Yan Y, Yang P
Characteristics of in-substituted CZTS thin film and bifacial solar cell
ACS Appl Mater Interfaces, 2014, 6: 21118-21130.

| 标签: 传感器

423.Journal Article

Gao Y Q, Huang Z M, Hou Y, Wu J, Zhou W, Zhang L B, Chu J H
Infrared optical properties of Mn1.56Co0.96Ni0.48O4 thin films prepared by chemical solution deposition
Applied Physics a-Materials Science & Processing, 2014, 114: 829-832.

| 标签: 传感器

424.Journal Article

Gao Y Q, Huang Z M, Hou Y, Wu J, Zhou W, OuYang C, Huang J G, Tong J C, Chu J H
Structural and electrical properties of Mn1.56Co0.96Ni0.48O4 NTC thermistor films
Materials Science and Engineering B-Advanced Functional Solid-State Materials, 2014, 185: 74-78.

| 标签: 传感器

425.Journal Article

Gao Y H, Yang J, Shen H, Sun J L, Meng X J, Chu J H
Evolution of multiple dielectric responses and relaxor-like behaviors in pure and nitrogen-ion-implanted (Ba, Sr)TiO3 thin films
Applied Physics Letters, 2014, 104: 122902.

| 标签: 传感器

426.Journal Article

Duan Z H, Jiang K, Xu L P, Li Y W, Hu Z G, Chu J H
Intrinsic relationship between electronic structures and phase transition of SrBi2-xNdxNb2O9 ceramics from ultraviolet ellipsometry at elevated temperatures
Journal of Applied Physics, 2014, 115: 054107.

| 标签: 传感器

427.Journal Article

Duan Z H, Chang P, Hu Z G, Wang J X, Wang G S, Dong X L, Chu J H
Temperature dependent Raman scattering and far-infrared reflectance spectra of MgO modified Pb-0.99(Zr0.95Ti0.05)(0.98)Nb0.02O3 ceramics: A composition effect
Journal of Applied Physics, 2014, 116: 093513.

| 标签: 传感器

428.Journal Article

Duan Z, Jiang K, Wu J, Sun J, Hu Z, Chu J H
Thickness-dependent optical properties in compressively strained BiFeO3/LaAlO3 films grown by pulsed laser deposition
Materials Research Bulletin, 2014, 51: 351-355.

| 标签: 传感器

429.Journal Article

Ding X J, Xu L P, Hu Z G, Chen X F, Wang G S, Dong X L, Chu J H
Phase diagram and incommensurate antiferroelectric structure in (Pb1-1.5xLax)(Zr0.42Sn0.40Ti0.18)O-3 ceramics discovered by band-to-band optical transitions
Applied Physics Letters, 2014, 105: 131909.

| 标签: 传感器

430.Journal Article

Chu J H, Meng X
A Ferroelectric Polymer of Polyvinylidene Fluoride for the Application of Infrared Detection
Infrared Technology, 2014, 36: 1-9.

| 标签: 传感器

431.Journal Article

Cao H, Zhang C J, Chu J H
The effect of working gas pressure and deposition power on the properties of molybdenum films deposited by DC magnetron sputtering
Science China-Technological Sciences, 2014, 57: 947-952.

| 标签: 传感器

432.Journal Article

Bai W, Yin W H, Yang J, Tang K, Zhang Y Y, Lin T, Meng X J, Duan C G, Tang X D, Chu J H
Cryogenic temperature relaxor-like dielectric responses and magnetodielectric coupling in Aurivillius Bi5Ti3FeO15 multiferroic thin films
Journal of Applied Physics, 2014, 116: 084103.

| 标签: 传感器

433.Journal Article

Bi, H. C.; Huang, X.; Wu, X.; Cao, X. H.; Tan, C. L.; Yin, Z. Y.; Lu, X. H.; Sun, L. T.; Zhang, H.
Carbon Microbelt Aerogel Prepared by Waste Paper: An Efficient and Recyclable Sorbent for Oils and Organic Solvents
In: Small, vol. 10, no. 17, pp. 3544-3550, 2014, ISSN: 1613-6810.

Links | BibTeX 标签: 原位电镜石墨烯           


@article{RN14,
title = {Carbon Microbelt Aerogel Prepared by Waste Paper: An Efficient and Recyclable Sorbent for Oils and Organic Solvents},
author = {H. C. Bi and X. Huang and X. Wu and X. H. Cao and C. L. Tan and Z. Y. Yin and X. H. Lu and L. T. Sun and H. Zhang},
doi = {10.1002/smll.201303413},
issn = {1613-6810},
year  = {2014},
date = {2014-01-01},
urldate = {2014-01-01},
journal = {Small},
volume = {10},
number = {17},
pages = {3544-3550},
keywords = {原位电镜, 石墨烯},
pubstate = {published},
tppubtype = {article}
}


434.Journal Article

Chen, Yuming; Meng, Lijuan; Zhao, Weiwei; Liang, Zheng; Wu, Xing; Nan, Haiyan; Wu, Zhangting; Huang, Shan; Sun, Litao; Wang, Jinlan; Ni, Zhenhua
Raman Mapping Investigation of Chemical Vapor Deposition-Fabricated Twisted Bilayer Graphene with Irregular Grains
In: Physical Chemistry Chemical Physics, vol. 16, no. 39, pp. 21682-21687, 2014, ISSN: 1463-9076.

Links | BibTeX 标签: 石墨烯           


@article{RN58,
title = {Raman Mapping Investigation of Chemical Vapor Deposition-Fabricated Twisted Bilayer Graphene with Irregular Grains},
author = {Yuming Chen and Lijuan Meng and Weiwei Zhao and Zheng Liang and Xing Wu and Haiyan Nan and Zhangting Wu and Shan Huang and Litao Sun and Jinlan Wang and Zhenhua Ni},
doi = {10.1039/c4cp03386h},
issn = {1463-9076},
year  = {2014},
date = {2014-01-01},
urldate = {2014-01-01},
journal = {Physical Chemistry Chemical Physics},
volume = {16},
number = {39},
pages = {21682-21687},
keywords = {石墨烯},
pubstate = {published},
tppubtype = {article}
}


435.Journal Article

Cong, C. X.; Shang, J. Z.; Wu, X.; Cao, B. C.; Peimyoo, N.; Qiu, C.; Sun, L. T.; Yu, T.
Synthesis and Optical Properties of Large-Area Single-Crystalline 2D Semiconductor WS2 Monolayer from Chemical Vapor Deposition
In: Physical Chemistry Chemical Physics, vol. 16, no. 39, pp. 21682-21687, 2014, ISSN: 1463-9076.

Links | BibTeX 标签:           


@article{RN24,
title = {Synthesis and Optical Properties of Large-Area Single-Crystalline 2D Semiconductor WS2 Monolayer from Chemical Vapor Deposition},
author = {C. X. Cong and J. Z. Shang and X. Wu and B. C. Cao and N. Peimyoo and C. Qiu and L. T. Sun and T. Yu},
doi = {10.1002/adom.201300428},
issn = {2195-1071},
year  = {2014},
date = {2014-01-01},
urldate = {2014-01-01},
journal = {Advanced Optical Materials},
volume = {2},
number = {2},
pages = {131-136},
keywords = {},
pubstate = {published},
tppubtype = {article}
}


436.Journal Article

Guo, X. G.; Fang, G. Z.; Li, G.; Ma, H.; Fan, H. J.; Yu, L.; Ma, C.; Wu, X.; Deng, D. H.; Wei, M. M.; Tan, D. L.; Si, R.; Zhang, S.; Li, J. Q.; Sun, L. T.; Tang, Z. C.; Pan, X. L.; Bao, X. H.
Direct, Nonoxidative Conversion of Methane to Ethylene, Aromatics, and Hydrogen
In: Science, vol. 344, no. 6184, pp. 616-619, 2014, ISSN: 0036-8075.

Abstract | Links | BibTeX 标签: 原位电镜           

The efficient use of natural gas will require catalysts that can activate the first C-H bond of methane while suppressing complete dehydrogenation and avoiding overoxidation. We report that single iron sites embedded in a silica matrix enable direct, nonoxidative conversion of methane, exclusively to ethylene and aromatics. The reaction is initiated by catalytic generation of methyl radicals, followed by a series of gas-phase reactions. The absence of adjacent iron sites prevents catalytic C-C coupling, further oligomerization, and hence, coke deposition. At 1363 kelvin, methane conversion reached a maximum at 48.1% and ethylene selectivity peaked at 48.4%, whereas the total hydrocarbon selectivity exceeded 99%, representing an atom-economical transformation process of methane. The lattice-confined single iron sites delivered stable performance, with no deactivation observed during a 60-hour test.


@article{RN12,
title = {Direct, Nonoxidative Conversion of Methane to Ethylene, Aromatics, and Hydrogen},
author = {X. G. Guo and G. Z. Fang and G. Li and H. Ma and H. J. Fan and L. Yu and C. Ma and X. Wu and D. H. Deng and M. M. Wei and D. L. Tan and R. Si and S. Zhang and J. Q. Li and L. T. Sun and Z. C. Tang and X. L. Pan and X. H. Bao},
doi = {10.1126/science.1253150},
issn = {0036-8075},
year  = {2014},
date = {2014-01-01},
urldate = {2014-01-01},
journal = {Science},
volume = {344},
number = {6184},
pages = {616-619},
abstract = {The efficient use of natural gas will require catalysts that can activate the first C-H bond of methane while suppressing complete dehydrogenation and avoiding overoxidation. We report that single iron sites embedded in a silica matrix enable direct, nonoxidative conversion of methane, exclusively to ethylene and aromatics. The reaction is initiated by catalytic generation of methyl radicals, followed by a series of gas-phase reactions. The absence of adjacent iron sites prevents catalytic C-C coupling, further oligomerization, and hence, coke deposition. At 1363 kelvin, methane conversion reached a maximum at 48.1% and ethylene selectivity peaked at 48.4%, whereas the total hydrocarbon selectivity exceeded 99%, representing an atom-economical transformation process of methane. The lattice-confined single iron sites delivered stable performance, with no deactivation observed during a 60-hour test.},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}


437.Journal Article

Li, M.; Wu, X.; Li, L.; Wang, Y. X.; Li, D. B.; Pan, J.; Li, S. J.; Sun, L. T.; Li, G. H.
Defect-Mediated Phase Transition Temperature of VO2 (M) Nanoparticles with Excellent Thermochromic Performance and Low Threshold Voltage
In: Journal of Materials Chemistry A, vol. 2, no. 13, pp. 4520-4523, 2014, ISSN: 2050-7488.

Abstract | Links | BibTeX 标签: 原位电镜           

This paper reports the phase transition temperature regulation of VO2 (M) nanoparticles using interfacial defects and size effect other than the traditional doping routine. The nanoparticles exhibit excellent thermochromic performance and a low threshold voltage.

<Go to ISI>://WOS:000332460800005

doi:10.1039/c3ta14822j


@article{RN2,
title = {Defect-Mediated Phase Transition Temperature of VO2 (M) Nanoparticles with Excellent Thermochromic Performance and Low Threshold Voltage},
author = {M. Li and X. Wu and L. Li and Y. X. Wang and D. B. Li and J. Pan and S. J. Li and L. T. Sun and G. H. Li},
url = {<Go to ISI>://WOS:000332460800005},
doi = {10.1039/c3ta14822j},
issn = {2050-7488},
year  = {2014},
date = {2014-01-01},
urldate = {2014-01-01},
journal = {Journal of Materials Chemistry A},
volume = {2},
number = {13},
pages = {4520-4523},
abstract = {This paper reports the phase transition temperature regulation of VO2 (M) nanoparticles using interfacial defects and size effect other than the traditional doping routine. The nanoparticles exhibit excellent thermochromic performance and a low threshold voltage.},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}


438.Journal Article

Li, X. Y.; Pan, X. L.; Yu, L.; Ren, P. J.; Wu, X.; Sun, L. T.; Jiao, F.; Bao, X. H.
Silicon Carbide-Derived Carbon Nanocomposite as A Substitute for Mercury in the Catalytic Hydrochlorination of Acetylene
In: Nature Communications, vol. 5, pp. 7, 2014, ISSN: 2041-1723.

Abstract | Links | BibTeX 标签: 原位电镜           

Acetylene hydrochlorination is an important coal-based technology for the industrial production of vinyl chloride, however it is plagued by the toxicity of the mercury chloride catalyst. Therefore extensive efforts have been made to explore alternative catalysts with various metals. Here we report that a nanocomposite of nitrogen- doped carbon derived from silicon carbide activates acetylene directly for hydrochlorination in the absence of additional metal species. The catalyst delivers stable performance during a 150 hour test with acetylene conversion reaching 80% and vinyl chloride selectivity over 98% at 200 degrees C. Experimental studies and theoretical simulations reveal that the carbon atoms bonded with pyrrolic nitrogen atoms are the active sites. This proof- of- concept study demonstrates that such a nanocomposite is a potential substitute for mercury while further work is still necessary to bring this to the industrial stage. Furthermore, the finding also provides guidance for design of carbon- based catalysts for activation of other alkynes.


@article{RN15,
title = {Silicon Carbide-Derived Carbon Nanocomposite as A Substitute for Mercury in the Catalytic Hydrochlorination of Acetylene},
author = {X. Y. Li and X. L. Pan and L. Yu and P. J. Ren and X. Wu and L. T. Sun and F. Jiao and X. H. Bao},
doi = {10.1038/ncomms4688},
issn = {2041-1723},
year  = {2014},
date = {2014-01-01},
urldate = {2014-01-01},
journal = {Nature Communications},
volume = {5},
pages = {7},
abstract = {Acetylene hydrochlorination is an important coal-based technology for the industrial production of vinyl chloride, however it is plagued by the toxicity of the mercury chloride catalyst. Therefore extensive efforts have been made to explore alternative catalysts with various metals. Here we report that a nanocomposite of nitrogen- doped carbon derived from silicon carbide activates acetylene directly for hydrochlorination in the absence of additional metal species. The catalyst delivers stable performance during a 150 hour test with acetylene conversion reaching 80% and vinyl chloride selectivity over 98% at 200 degrees C. Experimental studies and theoretical simulations reveal that the carbon atoms bonded with pyrrolic nitrogen atoms are the active sites. This proof- of- concept study demonstrates that such a nanocomposite is a potential substitute for mercury while further work is still necessary to bring this to the industrial stage. Furthermore, the finding also provides guidance for design of carbon- based catalysts for activation of other alkynes.},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}


439.Journal Article

Mei, Sen; He, Longbing; Wu, Xing; Sun, Jun; Wang, Binjie; Xiong, Xiaochuan; Sun, Litao
Dynamic Investigation of Interface Atom Migration During Heterostructure Nanojoining
In: Nanoscale, vol. 6, no. 1, pp. 405-411, 2014, ISSN: 2040-3364.

Links | BibTeX 标签: 原位电镜           


@article{RN68,
title = {Dynamic Investigation of Interface Atom Migration During Heterostructure Nanojoining},
author = {Sen Mei and Longbing He and Xing Wu and Jun Sun and Binjie Wang and Xiaochuan Xiong and Litao Sun},
doi = {10.1039/c3nr03911k},
issn = {2040-3364},
year  = {2014},
date = {2014-01-01},
urldate = {2014-01-01},
journal = {Nanoscale},
volume = {6},
number = {1},
pages = {405-411},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}


440.Journal Article

Xu, J.; Lu, A. J.; Wang, C. R.; Zou, R. J.; Liu, X. Y.; Wu, X.; Wang, Y. X.; Li, S. J.; Sun, L. T.; Chen, X. S.; Oh, H.; Baek, H.; Yi, G. C.; Chu, J. H.
ZnSe-Based Longitudinal Twinning Nanowires
In: Advanced Engineering Materials, vol. 16, no. 4, pp. 459-465, 2014, ISSN: 1438-1656.

Abstract | Links | BibTeX 标签:           

Zinc blende ZnSe longitudinal twinning nanowires and a sandwich structure with the wurtzite ZnSe inserting into the zinc blende ZnSe longitudinal twinning nanowires are fabricated via a simple thermal evaporation method. The high-resolution transmission electron microscope images of the two types of nanowires match well with simulated atomic models of them. The growth of them might be caused by the crystal plane slip during the phase transformation process between the wurtzite and the zinc blende ZnSe nanowire. The vibrating and luminescence properties of the as-grown longitudinal twinning nanowire are investigated by room-temperature Raman and low-temperature (10K) photoluminescence spectroscopy, respectively. The electrical transport properties of the two types of longitudinal twinning ZnSe nanowires and the monocrystal ZnSe nanowires were compared using in situ measurement in transmission electron microscope.


@article{RN16,
title = {ZnSe-Based Longitudinal Twinning Nanowires},
author = {J. Xu and A. J. Lu and C. R. Wang and R. J. Zou and X. Y. Liu and X. Wu and Y. X. Wang and S. J. Li and L. T. Sun and X. S. Chen and H. Oh and H. Baek and G. C. Yi and J. H. Chu},
doi = {10.1002/adem.201300405},
issn = {1438-1656},
year  = {2014},
date = {2014-01-01},
urldate = {2014-01-01},
journal = {Advanced Engineering Materials},
volume = {16},
number = {4},
pages = {459-465},
abstract = {Zinc blende ZnSe longitudinal twinning nanowires and a sandwich structure with the wurtzite ZnSe inserting into the zinc blende ZnSe longitudinal twinning nanowires are fabricated via a simple thermal evaporation method. The high-resolution transmission electron microscope images of the two types of nanowires match well with simulated atomic models of them. The growth of them might be caused by the crystal plane slip during the phase transformation process between the wurtzite and the zinc blende ZnSe nanowire. The vibrating and luminescence properties of the as-grown longitudinal twinning nanowire are investigated by room-temperature Raman and low-temperature (10K) photoluminescence spectroscopy, respectively. The electrical transport properties of the two types of longitudinal twinning ZnSe nanowires and the monocrystal ZnSe nanowires were compared using in situ measurement in transmission electron microscope.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}


441.Journal Article

Xu, X. J.; Fu, Q.; Wei, M. M.; Wu, X.; Bao, X. H.
Comparative Studies of Redox Behaviors of Pt-Co/SiO2 and Au-Co/SiO2 Catalysts and Their Activities in CO Oxidation
In: Catalysis Science & Technology, vol. 4, no. 9, pp. 3151-3158, 2014, ISSN: 2044-4753.

Abstract | Links | BibTeX 标签:           

Silica supported Pt-Co and Au-Co nanoparticles (NPs) were subjected to various redox processes and characterized by X-ray diffraction, X-ray absorption near edge structure, and X-ray photoelectron spectroscopy. We found that most of the Co oxide (CoOx) species on Pt NPs can be reduced at 100 degrees C forming an alloy structure with Pt at elevated temperatures. Oxidation of Co in the reduced sample takes place gradually with increasing temperatures. In contrast, temperatures higher than 400 degrees C are needed to reduce CoOx on Au NPs and Co atoms hardly form an alloy with Au even at 600 degrees C. The Co species in the reduced Au-Co/SiO2 sample were quickly oxidized in an O-2 atmosphere at room temperature. High CO oxidation activity was observed in the Pt-Co/SiO2 catalyst reduced below 300 degrees C; however this necessitated reduction at 600 degrees C of the Au-Co/SiO2 catalyst. The results illustrate a stronger interaction of Co (CoOx) with Pt than with Au. In both systems, the optimum treatment conditions are to produce a similar CoO-on-noble metal (NM) active structure and maximize the density of interface sites between the surface CoO structure and the NM support.


@article{RN13,
title = {Comparative Studies of Redox Behaviors of Pt-Co/SiO2 and Au-Co/SiO2 Catalysts and Their Activities in CO Oxidation},
author = {X. J. Xu and Q. Fu and M. M. Wei and X. Wu and X. H. Bao},
doi = {10.1039/c4cy00354c},
issn = {2044-4753},
year  = {2014},
date = {2014-01-01},
urldate = {2014-01-01},
journal = {Catalysis Science & Technology},
volume = {4},
number = {9},
pages = {3151-3158},
abstract = {Silica supported Pt-Co and Au-Co nanoparticles (NPs) were subjected to various redox processes and characterized by X-ray diffraction, X-ray absorption near edge structure, and X-ray photoelectron spectroscopy. We found that most of the Co oxide (CoOx) species on Pt NPs can be reduced at 100 degrees C forming an alloy structure with Pt at elevated temperatures. Oxidation of Co in the reduced sample takes place gradually with increasing temperatures. In contrast, temperatures higher than 400 degrees C are needed to reduce CoOx on Au NPs and Co atoms hardly form an alloy with Au even at 600 degrees C. The Co species in the reduced Au-Co/SiO2 sample were quickly oxidized in an O-2 atmosphere at room temperature. High CO oxidation activity was observed in the Pt-Co/SiO2 catalyst reduced below 300 degrees C; however this necessitated reduction at 600 degrees C of the Au-Co/SiO2 catalyst. The results illustrate a stronger interaction of Co (CoOx) with Pt than with Au. In both systems, the optimum treatment conditions are to produce a similar CoO-on-noble metal (NM) active structure and maximize the density of interface sites between the surface CoO structure and the NM support.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}


442.Journal Article

Zhu Z, Chu J H
Analysis of the current conduction in poly-Si thin film transistors
Semiconductor Science and Technology, 2013, 28: 015017.

| 标签: 传感器

443.Journal Article

Zhu J J, Jiang K, Xu G S, Hu Z G, Li Y W, Zhu Z Q, Chu J H
Temperature-dependent Raman scattering and multiple phase coexistence in relaxor ferroelectric Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystals
Journal of Applied Physics, 2013, 114: 153508.

| 标签: 传感器

444.Journal Article

Zhao S R, Huang Z P, Sun L, Sun P C, Zhang C J, Wu Y H, Cao H, Wang S L, Chu J H
Analysis of electrical property parameters of CdS/CdTe solar cells fabricated by close space-sublimation
Acta Physica Sinica, 2013, 62: 188801.

| 标签: 传感器

445.Journal Article

Zhao S R, Huang Z P, Sun L, Sun P C, Zhang C J, Wu Y H, Cao H, Wang S L, Chu J H
A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells
Acta Physica Sinica, 2013, 62: 168801.

| 标签: 传感器

446.Journal Article

Zhao S R, Huang Z P, Sun L, Sun P C, Zhang C J, Wu Y H, Cao H, Huang Z M, Wang S L, Chu J H
Numerical analysis of the non-ideal current-voltage characteristics of solar cell
Journal of Infrared and Millimeter Waves, 2013, 32: 389.

| 标签: 传感器

447.Journal Article

Zhang Y, Huang Z M, Hou Y, Zhou W, Chu J H
Spectroscopic and electrial properties of manganese cobalt nickelate copper films prepared by chemical depopition
Journal of Infrared and Millimeter Waves, 2013, 32: 113-117.

| 标签: 传感器

448.Journal Article

Zhang X L, Hu Z G, Xu G S, Zhu J J, Li Y W, Zhu Z Q, Chu J H
Optical bandgap and phase transition in relaxor ferroelectric Pb(Mg1/3Nb2/3) O-3-xPbTiO(3) single crystals: An inherent relationship
Applied Physics Letters, 2013, 103: 051902.

| 标签: 传感器

449.Journal Article

Zhang S, Han M J, Zhang J Z, Li Y W, Hu Z G, Chu J H
Optoelectronic and Ferroelectric Properties of Cerium-Doped (Na0.5Bi0.5)(Ti0.99Fe0.01)O-3 Nanocrystalline Films on (111) Pt/TiO2/SiO2/Si: A Composition-Dependent Study
Acs Applied Materials & Interfaces, 2013, 5: 3191-3198.

| 标签: 传感器

450.Journal Article

Zhang Q, Chen D L, Li X, Yang P X, Chu J H, Zhao Z J
Influence of an Electronic Field on the GMI Effect of Fe-based Nanocrystalline Microwire
Nano-Micro Letters, 2013, 5: 13-17.

| 标签: 传感器

451.Journal Article

Zhang L B, Hou Y, Zhou W, Gao Y Q, Wu J, Huang Z M, Chu J H
Investigation on optical properties of NiMn2O4 films by spectroscopic ellipsometry
Solid State Communications, 2013, 159: 32-35.

| 标签: 传感器

452.Conference

Zhang J Z, Huang T, Li Y W, Hu Z G, Meng X J, Chu J H
Synthesis and optical properties of the (La, Mn)-codoped BiFeO3 films on n(+)-Si(100) substrates
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013.

| 标签: 传感器

453.Journal Article

Zhang J Z, Duan Z H, Zhang H, Han M J, Li Y W, Hu Z G, Chu J H
Improved electric behaviors of the Pt/Bi1-xLaxFe0.92Mn0.08O3/n(+)-Si heterostructure for nonvolatile ferroelectric random-access memory
Journal of Materials Chemistry C, 2013, 1: 6252-6258.

| 标签: 传感器

454.Conference

Zhang J, Deng H, Yang P, He J, Liu T, Sun L, Chu J H
The characterization of CuInSe2 thin films by sequential processes of sputtering and selenization
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013.

| 标签: 传感器

455.Journal Article

Zhang C J, Wu Y H, Cao H, Zhao S R, Wang S L, Chu J H
Effect of different annealing conditions on the properties of CdS thin films deposited by magnetron sputtering
Journal of Infrared and Millimeter Waves, 2013, 32: 298-303.

| 标签: 传感器

456.Journal Article

Zhang C J, Wu Y H, Cao H, Gao Y Q, Zhao S R, Wang S L, Chu J H
Effects of different substrates and CdCl2 treatment on the properties of CdS thin films deposited by magnetron sputtering
Acta Physica Sinica, 2013, 62: 158107.

| 标签: 传感器

457.Journal Article

Zhang C, Cong J, Wu Y, Cao H, Wang S, Chu J H
Visible-near Infrared Spectral Transmittance Properties for CdS Films
Infrared Technology, 2013, 35: 259-264.

| 标签: 传感器

458.Journal Article

Yu W L, Han M J, Jiang K, Duan Z H, Li Y W, Hu Z G, Chu J H
Enhanced Frohlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance
Journal of Raman Spectroscopy, 2013, 44: 142-146.

| 标签: 传感器

459.Journal Article

Yu Q, Li W W, Liang J R, Duan Z H, Hu Z G, Liu J, Chen H D, Chu J H
Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1 1)-oriented vanadium dioxide films grown by magnetron sputtering
Journal of Physics D-Applied Physics, 2013, 46: 055310.

| 标签: 传感器

460.Conference

Yao N, Ma J, Zhu X, Liang Y, Jiang J, Chu J H
Preparation of CuInSe2 thin films by spin-coating and selenization
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013.

| 标签: 传感器

461.Journal Article

Yan H R, Deng H M, Ding N F, He J, Peng L, Sun L, Yang P X, Chu J H
Influence of transition elements doping on structural, optical and magnetic properties of BiFeO3 films fabricated by magnetron sputtering
Materials Letters, 2013, 111: 123-125.

| 标签: 传感器

462.Conference

Xu L P, Zhang L L, Jiang P P, Yu J, Duan Z H, Hu Z G, Zhu Z Q, Chu J H
Interband electronic transitions and phase transformation of multiferroic Bi1-xLaxFe1-yTiyO3 ceramics revealed by temperature-dependent spectroscopic ellipsometry
Journal of Applied Physics, 2013, 114: 233509.

| 标签: 传感器

463.Conference

Xu J, Lu A, Wang C, Chen X, Chu J H, Yi G-C
Growth of ZnSe-based longitudinal twinning nanowires by phase transformation
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, China, F Sep 20-23, 2013.

| 标签: 传感器

464.Journal Article

Xiang P H, Zhong N, Duan C G, Tang X D, Hu Z G, Yang P X, Zhu Z Q, Chu J H
Strain controlled metal-insulator transition in epitaxial NdNiO3 thin films
Journal of Applied Physics, 2013, 114: 243713.

| 标签: 传感器

465.Journal Article

Wei L M, Liu X Z, Yu G L, Gao K H, Wang Q W, Lin T, Guo S L, Wei Y F, Yang J R, He L, Dai N, Chu J H
Antilocalization effect in HgCdTe film
Journal of Infrared and Millimeter Waves, 2013, 32: 141-144.

| 标签: 传感器

466.Journal Article

Wei L M, Gao K H, Liu X Z, Yu G, Wang Q W, Lin T, Guo S L, Wei Y F, Yang J R, He L, Dai N, Chu J H, Austing D G
Microwave-enhanced dephasing time in a HgCdTe film
Applied Physics Letters, 2013, 102: 012108.

| 标签: 传感器

467.Conference

Wang W J, He J, Zhang K Z, Sun L, Yang P X, Chu J H
Characterization of Cu0.9In0.9Zn0.2Se2 Thin Films Prepared by One-step RF Magnetron Sputtering Process
proceedings of the Proceedings of the 2013 International Conference on Material Science and Environmental Engineering, Wuhan, PEOPLES R CHINA, F Aug 17-18, 2013. Destech Publications, Inc.

| 标签: 传感器

468.Journal Article

Tu Y, Tang Z, Zhao X G, Chen Y, Zhu Z Q, Chu J H, Fang J C
A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application
Applied Physics Letters, 2013, 103: 072103.

| 标签: 传感器

469.Journal Article

Tong J C, Huang Z M, Hou Y, Zhang L B, Zhou W, Huang J G, Chu J H
Development of a Multiband Passive Scanning Imager
Journal of Infrared Millimeter and Terahertz Waves, 2013, 34: 267-276.

| 标签: 传感器

470.Journal Article

Tian J J, Gao H P, Deng H M, Sun L, Kong H, Yang P X, Chu J H
Structural, magnetic and optical properties of Ni-doped TiO2 thin films deposited on silicon(100) substrates by sol-gel process
Journal of Alloys and Compounds, 2013, 581: 318-323.

| 标签: 传感器

471.Journal Article

Tian B B, Zhao X L, Liu B L, Wang J L, Han L, Sun J L, Meng X J, Chu J H
Abnormal polarization switching of relaxor terpolymer films at low temperatures
Applied Physics Letters, 2013, 102: 072906.

| 标签: 传感器

472.Journal Article

Tian B B, Chen Z H, Jiang A Q, Zhao X L, Liu B L, Wang J L, Han L, Sun S, Sun J L, Meng X J, Chu J H
The creep process of the domain switching in poly(vinylidene fluoride-trifluoroethylene) ferroelectric thin films
Applied Physics Letters, 2013, 103: 042909.

| 标签: 传感器

473.Journal Article

Tao B R, Miao F J, Chu J H
Structure and photoelectrochemical properties of silicon microstructures arrays
Electrochimica Acta, 2013, 108: 248-252.

| 标签: 传感器

474.Journal Article

Tang Z, Sun F, Han B, Yu K, Zhu Z Q, Chu J H
Tuning Interlayer Exchange Coupling of Co-Doped TiO2/VO2 Multilayers via Metal-Insulator Transition
Physical Review Letters, 2013, 111: 107203.

| 标签: 传感器

475.Journal Article

Sun Q, Deng H M, Yang P X, Chu J H
The influence of La content on photovoltaic effect of PZT thin films
Journal of Infrared and Millimeter Waves, 2013, 32: 128-131.

| 标签: 传感器

476.Journal Article

Shen Y D, Li Y W, Jiang K, Zhang J Z, Duan Z H, Hu Z G, Chu J H
Fabrication and temperature-dependent band gap shrinkage of alpha-phase Bi2O3 thin films grown by atomic layer deposition method
European Physical Journal-Applied Physics, 2013, 62: 20303.

| 标签: 传感器

477.Conference

Shan C, Huang T, Hu Z, Chu J H
Growth and physical properties of Ba1-xLaxSnO3 films grown on SrTiO3 substrates by sol-gel method
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013 2013.

| 标签: 传感器

478.Journal Article

Peng L, Deng H M, Tian J J, Ren Q, Peng C, Huang Z P, Yang P X, Chu J H
Influence of Co doping on structural, optical and magnetic properties of BiFeO3 films deposited on quartz substrates by sol-gel method
Applied Surface Science, 2013, 268: 146-150.

| 标签: 传感器

479.Journal Article

Peng C, Yang P X, Wu L C, Song Z T, Rao F, Song S N, Zhou D, Chu J H
Nitrogen-doped Ge3Te2 materials with self-restricted active region for low power phase-change memory
Journal of Applied Physics, 2013, 113: 034310.

| 标签: 传感器

480.Journal Article

Peng C, Wu L C, Rao F, Song Z T, Lv S L, Zhou X L, Du X F, Cheng Y, Yang P X, Chu J H
A simple method used to evaluate phase-change materials based on focused-ion beam technique
Applied Physics Letters, 2013, 102: 203510.

| 标签: 传感器

481.Conference

Ouyang C, Zhou W, Wu J, Chu J H, Huang Z
Fabrication and performance of uncooled infrared bolometer based on Mn1.56Co0.96Ni0.48O4 thin films
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013.

| 标签: 传感器

482.Journal Article

Miao F J, Wang Z, Tao B R, Chu J H, Chu P K
Composition dependence of structural, optical, and photoelectrochemical properties of nanocrystalline neodymium-doped titania photocatalyst
Electrochimica Acta, 2013, 112: 32-36.

| 标签: 传感器

483.Journal Article

Miao F J, Tao B R, Jiang K, Zhang J Z, Li W W, Hu Z G, Chu J H, Chu P K
Photoluminescence properties of ordered Bi4-xNdxTi3O12 matrix supported by 3-dimensional silicon microchannel plate
Journal of Physics D-Applied Physics, 2013, 46: 315105.

| 标签: 传感器

484.Journal Article

Miao F J, Tao B R, Chu J H
Nonenzymatic Alkaline Direct Glucose Fuel Cell With a Silicon Microchannel Plate Supported Electrocatalytic Electrode
Journal of Fuel Cell Science and Technology, 2013, 10: 041003.

| 标签: 传感器

485.Conference

Ma J, Liang Y, Yao N, Zhu X, Jiang J, Chu J H
Effects of post annealing on structural, electrical and optical properties of ZnO:Al thin films prepared by RF magnetron sputtering
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013, 2013.

| 标签: 传感器

486.Journal Article

Liu X Z, Yu G, Wei L M, Lin T, Xu Y G, Yang J R, Wei Y F, Guo S L, Chu J H, Rowell N L, Lockwood D J
The nonlinear Rashba effect in Hg0.77Cd0.23Te inversion layers probed by weak antilocalization analysis
Journal of Applied Physics, 2013, 113: 013704.

| 标签: 传感器

487.Journal Article

Liu X Z, Xu Y G, Yu G, Wei L M, Lin T, Guo S L, Chu J H, Zhou W Z, Zhang Y G, Lockwood D J
The effective g-factor in In0.53Ga0.47As/In0.52Al0.48As quantum well investigated by magnetotransport measurement
Journal of Applied Physics, 2013, 113: 033704.

| 标签: 传感器

488.Conference

Liu T, Deng H, Yang P, Zhang J, Cao H, He J, Chu J H
Growth and Characterization of Sb2Te3 Thin Film Deposited by Pulsed Laser Method
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013, 2013.

| 标签: 传感器

489.Journal Article

Liu J, Bai W, Yang J, Xu W F, Zhang Y Y, Lin T, Meng X J, Duan C G, Tang X D, Chu J H
The Cr-substitution concentration dependence of the structural, electric and magnetic behaviors for Aurivillius Bi5Ti3FeO15 multiferroic ceramics
Journal of Applied Physics, 2013, 114: 234101.

| 标签: 传感器

490.Journal Article

Liu A, Han H, Wei L, Wang P, Lin F, Shi W, Meng X, Sun J, Chu J H, Jing C
Microstructure and electrical properties Of PMNT thin films prepared by a modified sol-gel process
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013, 2013.

| 标签: 传感器

491.Journal Article

Jing C B, Zhang C J, Chu J H
Formation and characterization of nanoporous structures on surface of LPD-derived GeO2 ceramic film
Journal of Porous Materials, 2013, 20: 359-365.

| 标签: 传感器

492.Conference

Jing C, Guo H, Bai W, Hu Z, Yang J, Yang P, Chu J H, Liu A, Lin F
Structure and magnetic properties of Ge99.04Mn0.96 thin film prepared by thermal evaporation of Mn doped GeO2 ceramic film under hydrogen atmosphere
proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, China, F Sep 20-23, 2013, 2013.

| 标签: 传感器

493.Conference

Jiang L, Meng X J, Zhao X L, Tian B B, Liu B L, Yuan G L, Wang J L, Sun J L, Chu J H
The evolution of activation field with temperature in ferroelectric copolymer of vinylidene fluoride and trifluoroethylene films
proceedings of the 3rd International Conference on Chemical Engineering and Advanced Materials (CEAM 2013), Guangzhou, PEOPLES R CHINA, F Jul 06-07, 2013.

| 标签: 传感器

494.Journal Article

Huo X X, Peng X Y, Liu W, Mo X L, Chen G R, Wang S L, Chu J H
Comparison between the effects of CdCl2 heat treatment on CdTe films prepared by RF magnetron sputtering and close spaced sublimation methods
Journal of Materials Science-Materials in Electronics, 2013, 24: 2479-2484.

| 标签: 传感器

495.Journal Article

Huang J G, Lu J X, Zhou W, Tong J C, Huang Z M, Chu J H
Investigation of high power terahertz emission in gap crystal based on collinear difference frequency generation
Acta Physica Sinica, 2013, 62: 120704.

| 标签: 传感器

496.Journal Article

Huang J G, Huang Z M, Tong J C, Ouyang C, Chu J H, Andreev Y, Kokh K, Lanskii G
Shaiduko A. Intensive terahertz emission from GaSe0.91S0.09 under collinear difference frequency generation
Applied Physics Letters, 2013, 103: 081104.

| 标签: 传感器

497.Journal Article

Hong X K, Liu Y S, Feng J F, Chu J H
Thermal spin current through a double quantum dot molecular junction in the Coulomb blockade regime
Journal of Applied Physics, 2013, 114: 144309.

| 标签: 传感器

498.Journal Article

He J, Sun L, Zhang K Z, Wang W J, Jiang J C, Chen Y, Yang P X, Chu J H
Effect of post-sulfurization on the composition, structure and optical properties of Cu2ZnSnS4 thin films deposited by sputtering from a single quaternary target
Applied Surface Science, 2013, 264: 133-138.

| 标签: 传感器

499.Journal Article

Han M J, Duan Z H, Zhang J Z, Zhang S, Li Y W, Hu Z G, Chu J H
Electronic transition and electrical transport properties of delafossite CuCr1-xMgxO2 (0 <= x <= 12%) films prepared by the sol-gel method: A composition dependence study
Journal of Applied Physics, 2013, 114: 163526.

| 标签: 传感器

500.Journal Article

Gong S J, Duan C G, Zhu Y, Zhu Z Q, Chu J H
Controlling Rashba spin splitting in Au(111) surface states through electric field
Physical Review B, 2013, 87: 035403.

| 标签: 传感器

501.Journal Article

Gong S J, Ding H C, Zhu W J, Duan C G, Zhu Z Q, Chu J H
A new pathway towards all-electric spintronics: electric-field control of spin states through surface/interface effects
Science China-Physics Mechanics & Astronomy, 2013, 56: 232-244.

| 标签: 传感器

502.Journal Article

Ge J, Jiang J C, Hu G J, Zhang X L, Zuo S H, Yang L H, Ma J H, Cao M, Yang P X, Chu J H
Effect of Na2S2O3 center dot 5H(2)O concentration on the properties of Cu-2 ZnSn(S, Se)(4) thin films fabricated by selenization of co-electroplated Cu-Zn-Sn-S precursors
Journal of Infrared and Millimeter Waves, 2013, 32: 289.

| 标签: 传感器

503.Conference

Gao Y Q, Huang Z M, Hou Y, Wu J, Chu J H
Optical and electrical properties of Mn1.56Co0.96Ni0.48O4 thin films
proceedings of the Eighth International Conference on Thin Film Physics and Applications (TFPA13), Shanghai, China, F 2013, 2013 SPIE.

| 标签: 传感器

504.Journal Article

Gao Y C, Duan C G, Tang X D, Hu Z G, Yang P X, Zhu Z Q, Chu J H
A first-principles study on the intrinsic asymmetric ferroelectricity of the SrTiO3-BaTiO3-CaTiO3 tricolor superlattice at the nanoscale
Journal of Physics-Condensed Matter, 2013, 25: 165901.

| 标签: 传感器

505.Journal Article

Gao K H, Wang Q W, Lin T, Li Z Q, Zhang X H, Xu J, Deng H Y, Chu J H
Large magnetoresistance in (In, Zn)As/InAs p-n junction
Epl, 2013, 102: 37009.

| 标签: 传感器

506.Journal Article

Gao K H, Lin T, Liu X D, Zhang X H, Li X N, Wu J, Liu Y F, Wang X F, Chen Y W, Ni B, Dai N, Chu J H
Low temperature electrical transport properties of F-doped SnO2 films
Solid State Communications, 2013, 157: 49-53.

| 标签: 传感器

507.Journal Article

Gao H P, Tian J J, Kong H, Yang P X, Zhang W F, Chu J H
Optical and magnetic properties of mixed crystal Ti0.95Ni0.05O2 films deposited on Si substrates by sol-gel method
Surface & Coatings Technology, 2013, 228: 162-166.

| 标签: 传感器

508.Journal Article

Duan Z H, Hu Z G, Jiang K, Li Y W, Wang G S, Dong X L, Chu J H
Temperature-dependent dielectric functions and interband critical points of relaxor lead hafnate-modified PbSc1/2Ta1/2O3 ferroelectric ceramics by spectroscopic ellipsometry
Applied Physics Letters, 2013, 102: 151908.

| 标签: 传感器

509.Journal Article

Cong R, Hu G J, Yu G L, Chu J H, Dai N
Electrical and optical performance of PbZr0.4Ti0.6O3 optical microcavity derived from one single chemical solution
Journal of Applied Physics, 2013, 114: 044107.

| 标签: 传感器

510.Journal Article

Cong R, Hu G J, Hong X K, Yu G L, Chu J H, Dai N
Microstructure and Optical Property in an Irregular Multilayer Comprising Ferroelectric and Paraelectric Materials
Journal of the American Ceramic Society, 2013, 96: 355-357.

| 标签: 传感器

511.Journal Article

Chen X, Jiang P P, Duan Z H, Hu Z G, Chen X F, Wang G S, Dong X L, Chu J H
The A-site driven phase transition procedure of (Pb0.97La0.02)(Zr0.42Sn0.40Ti0.18)O-3 ceramics: An evidence from electronic structure variation
Applied Physics Letters, 2013, 103: 192910.

| 标签: 传感器

512.Journal Article

Chen X, Hu Z G, Duan Z H, Chen X F, Wang G S, Dong X L, Chu J H
Effects from A-site substitution on morphotropic phase boundary and phonon modes of (Pb1-1.5xLax)(Zr0.42Sn0.40T0.18)O-3 ceramics by temperature dependent Raman spectroscopy
Journal of Applied Physics, 2013, 114: 043507.

| 标签: 传感器

513.Journal Article

Chen G, Bai W, Sun L, Wu J, Ren Q, Xu W F, Yang J, Meng X J, Tang X D, Duan C G, Chu J H
Processing optimization and sintering time dependent magnetic and optical behaviors of Aurivillius Bi5Ti3FeO15 ceramics
Journal of Applied Physics, 2013, 113: 034901.

| 标签: 传感器

514.Journal Article

Cao H, Chu J H, Wang S L, Wu Y H, Zhang C J
Effects of deposition parameters on Cd1-xZnx Te films prepared by RF magnetron sputtering
Journal of Infrared and Millimeter Waves, 2013, 32: 97-101.

| 标签: 传感器

515.Journal Article

He, C. L.;  Li, J. F.;  Wu, X.;  Chen, P.;  Zhao, J.;  Yin, K. B.;  Cheng, M.;  Yang, W.;  Xie, G. B.;  Wang, D. M.;  Liu, D. H.;  Yang, R.;  Shi, D. X.;  Li, Z. Y.;  Sun, L. T.;  Zhang, G. Y.
Tunable Electroluminescence in Planar Graphene/SiO2 Memristors
In: Advanced Materials, vol. 25, no. 39, pp. 5593-+, 2013, ISSN: 0935-9648.

Abstract | Links | BibTeX 标签: 原位电镜           

Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.


@article{RN18,
title = {Tunable Electroluminescence in Planar Graphene/SiO2 Memristors},
author = {C. L. He and J. F. Li and X. Wu and P. Chen and J. Zhao and K. B. Yin and M. Cheng and W. Yang and G. B. Xie and D. M. Wang and D. H. Liu and R. Yang and D. X. Shi and Z. Y. Li and L. T. Sun and G. Y. Zhang},
doi = {10.1002/adma.201302447},
issn = {0935-9648},
year  = {2013},
date = {2013-01-01},
urldate = {2013-01-01},
journal = {Advanced Materials},
volume = {25},
number = {39},
pages = {5593-+},
abstract = {Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}


516.Journal Article

Liu, Xiaofei;  Xu, Tao;  Wu, Xing;  Zhang, Zhuhua;  Yu, Jin;  Qiu, Hao;  Hong, Jin-Hua;  Jin, Chuan-Hong;  Li, Ji-Xue;  Wang, Xin-Ran;  Sun, Li-Tao;  Guo, Wanlin
Top-Down Fabrication of Sub-Nanometre Semiconducting Nanoribbons Derived From Molybdenum Disulfide Sheets
In: Nature Communications, vol. 4, 2013. ISSN: 2041-1723.

Abstract | Links | BibTeX 标签: 原位电镜           

Developments in semiconductor technology are propelling the dimensions of devices down to 10 nm, but facing great challenges in manufacture at the sub-10 nm scale. Nanotechnology can fabricate nanoribbons from two-dimensional atomic crystals, such as graphene, with widths below the 10 nm threshold, but their geometries and properties have been hard to control at this scale. Here we find that robust ultrafine molybdenum-sulfide ribbons with a uniform width of 0.35nm can be widely formed between holes created in a MoS2 sheet under electron irradiation. In situ high-resolution transmission electron microscope characterization, combined with first-principles calculations, identifies the sub-1 nm ribbon as a Mo5S4 crystal derived from MoS2, through a spontaneous phase transition. Further first-principles investigations show that the Mo5S4 ribbon has a band gap of 0.77 eV, a Young's modulus of 300GPa and can demonstrate 9% tensile strain before fracture. The results show a novel top-down route for controllable fabrication of functional building blocks for sub-nanometre electronics.

doi:10.1038/ncomms2803           


@article{RN1,
title = {Top-Down Fabrication of Sub-Nanometre Semiconducting Nanoribbons Derived From Molybdenum Disulfide Sheets},
author = {Xiaofei Liu and Tao Xu and Xing Wu and Zhuhua Zhang and Jin Yu and Hao Qiu and Jin-Hua Hong and Chuan-Hong Jin and Ji-Xue Li and Xin-Ran Wang and Li-Tao Sun and Wanlin Guo},
doi = {10.1038/ncomms2803},
issn = {2041-1723},
year  = {2013},
date = {2013-01-01},
urldate = {2013-01-01},
journal = {Nature Communications},
volume = {4},
abstract = {Developments in semiconductor technology are propelling the dimensions of devices down to 10 nm, but facing great challenges in manufacture at the sub-10 nm scale. Nanotechnology can fabricate nanoribbons from two-dimensional atomic crystals, such as graphene, with widths below the 10 nm threshold, but their geometries and properties have been hard to control at this scale. Here we find that robust ultrafine molybdenum-sulfide ribbons with a uniform width of 0.35nm can be widely formed between holes created in a MoS2 sheet under electron irradiation. In situ high-resolution transmission electron microscope characterization, combined with first-principles calculations, identifies the sub-1 nm ribbon as a Mo5S4 crystal derived from MoS2, through a spontaneous phase transition. Further first-principles investigations show that the Mo5S4 ribbon has a band gap of 0.77 eV, a Young's modulus of 300GPa and can demonstrate 9% tensile strain before fracture. The results show a novel top-down route for controllable fabrication of functional building blocks for sub-nanometre electronics.},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {article}
}


517.Journal Article

Liu, Y. L.;  Nan, H. Y.;  Wu, X.;  Pan, W.;  Wang, W. H.;  Bai, J.;  Zhao, W. W.;  Sun, L. T.;  Wang, X. R.;  Ni, Z. H.
Layer-by-Layer Thinning of MoS2 by Plasma
In: ACS Nano, vol. 7, no. 5,  pp. 4202-4209, 2013, ISSN: 1936-0851.

Abstract | Links | BibTeX 标签:           

The electronic structures of two-dimensional materials are strongly dependent on their thicknesses; for example, there is an indirect to direct band gap transition from multilayer to single-layer MoS2. A simple, efficient, and nondestructive way to control the thickness of MoS2 is highly desirable for the study of thickness-dependent properties as well as for applications. Here, we present layer-by-layer thinning of MoS2 nanosheets down to monolayer by using Ar+ plasma. Atomic force microscopy, high-resolution transmission electron microscopy, optical contrast, Raman, and photoluminescence spectra suggest that the top layer MoS2 is totally removed by plasma while the bottom layer remains almost unaffected. The evolution of Raman and photoluminescence spectra of MoS2 with thickness change is also investigated. Finally, we demonstrate that this method can be used to prepare two-dimensional heterostructures with periodical single-layer and bilayer MoS2. The plasma thinning of MoS2 is very reliable (with almost 100% success rate), can be easily scaled up, and Is compatible with standard semiconductor process to generate heterostructures/patterns at nanometer scale, which may bring out Interesting properties and new physics.


          


@article{RN19,
title = {Layer-by-Layer Thinning of MoS2 by Plasma},
author = {Y. L. Liu and H. Y. Nan and X. Wu and W. Pan and W. H. Wang and J. Bai and W. W. Zhao and L. T. Sun and X. R. Wang and Z. H. Ni},
url = {<Go to ISI>://WOS:000319856300057},
doi = {10.1021/nn400644t},
issn = {1936-0851},
year  = {2013},
date = {2013-01-01},
urldate = {2013-01-01},
journal = {ACS Nano},
volume = {7},
number = {5},
pages = {4202-4209},
abstract = {The electronic structures of two-dimensional materials are strongly dependent on their thicknesses; for example, there is an indirect to direct band gap transition from multilayer to single-layer MoS2. A simple, efficient, and nondestructive way to control the thickness of MoS2 is highly desirable for the study of thickness-dependent properties as well as for applications. Here, we present layer-by-layer thinning of MoS2 nanosheets down to monolayer by using Ar+ plasma. Atomic force microscopy, high-resolution transmission electron microscopy, optical contrast, Raman, and photoluminescence spectra suggest that the top layer MoS2 is totally removed by plasma while the bottom layer remains almost unaffected. The evolution of Raman and photoluminescence spectra of MoS2 with thickness change is also investigated. Finally, we demonstrate that this method can be used to prepare two-dimensional heterostructures with periodical single-layer and bilayer MoS2. The plasma thinning of MoS2 is very reliable (with almost 100% success rate), can be easily scaled up, and Is compatible with standard semiconductor process to generate heterostructures/patterns at nanometer scale, which may bring out Interesting properties and new physics.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}


518.Conference

Pey, K. L.;  Shubhakar, K.;  Raghavan, N.;  Wu, X.;  Bosman, M.
Impact of Local Variations in High-k dielectric on Breakdown and Recovery Characteristics of Advanced Gate Stacks
2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) , 2013.

Links | BibTeX 标签: 原位电镜可靠性           


@conference{RN72,
title = {Impact of Local Variations in High-k dielectric on Breakdown and Recovery Characteristics of Advanced Gate Stacks},
author = {K. L. Pey and K. Shubhakar and N. Raghavan and X. Wu and M. Bosman},
doi = {10.1109/edssc.2013.6628192},
year  = {2013},
date = {2013-01-01},
urldate = {2013-01-01},
booktitle = {2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) },
journal = {2013 IEEE International Conference of Electron Devices and Solid-state Circuits (EDSSC)},
pages = {2 pp.-2 pp.},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {conference}
}


519.Journal Article

Raghavan, N.;  Padovani, A.;  Li, X.;  Wu, X.;  Lo, V. L.;  Bosman, M.;  Larcher, L.;  Pey, K. L.
Resilience of Ultra-Thin Oxynitride Films to Percolative Wear-Out and Reliability Implications For High-Kappa Stacks at Low Voltage Stress
In: Journal of Applied Physics, vol. 114, no. 9, pp. 8, 2013. ISSN: 0021-8979.

Abstract | Links | BibTeX 标签: 可靠性           

Localized progressive wear-out and degradation of ultra-thin dielectrics around the oxygen vacancy percolation path formed during accelerated time dependent dielectric breakdown tests is a well-known phenomenon documented for silicon oxynitride (SiON) based gate stacks in metal oxide semiconductor field effect transistors. This progressive or post breakdown stage involves an initial phase characterized by "digital" random telegraph noise fluctuations followed by the wear-out of the percolation path, which results in an änalog" increase in the leakage current, culminating in a thermal runaway and hard breakdown. The relative contribution of the digital and analog phases of degradation at very low voltage stress in ultra-thin SiON (16 angstrom) is yet to be fully investigated, which represents the core of this study. We investigate the wear-out process by combining electrical and physical analysis evidences with modeling and simulation results using Kinetic Monte Carlo defect generation and multi-phonon trap assisted tunneling (PTAT) models. We show that the transition from the digital to the analog regime is governed by a critical voltage (V-CRIT), which determines the reliability margin in the post breakdown phase. Our results have a significant impact on the post-breakdown operational reliability of SiON and advanced high-kappa-SiOx interfacial layer gate stacks, wherein the SiOx layer seems to be the weakest link for percolation event. (C) 2013 AIP Publishing LLC.

doi:10.1063/1.4819445           


@article{RN22,
title = {Resilience of Ultra-Thin Oxynitride Films to Percolative Wear-Out and Reliability Implications For High-Kappa Stacks at Low Voltage Stress},
author = {N. Raghavan and A. Padovani and X. Li and X. Wu and V. L. Lo and M. Bosman and L. Larcher and K. L. Pey},
doi = {10.1063/1.4819445},
issn = {0021-8979},
year  = {2013},
date = {2013-01-01},
urldate = {2013-01-01},
journal = {Journal of Applied Physics},
volume = {114},
number = {9},
pages = {8},
abstract = {Localized progressive wear-out and degradation of ultra-thin dielectrics around the oxygen vacancy percolation path formed during accelerated time dependent dielectric breakdown tests is a well-known phenomenon documented for silicon oxynitride (SiON) based gate stacks in metal oxide semiconductor field effect transistors. This progressive or post breakdown stage involves an initial phase characterized by "digital" random telegraph noise fluctuations followed by the wear-out of the percolation path, which results in an änalog" increase in the leakage current, culminating in a thermal runaway and hard breakdown. The relative contribution of the digital and analog phases of degradation at very low voltage stress in ultra-thin SiON (16 angstrom) is yet to be fully investigated, which represents the core of this study. We investigate the wear-out process by combining electrical and physical analysis evidences with modeling and simulation results using Kinetic Monte Carlo defect generation and multi-phonon trap assisted tunneling (PTAT) models. We show that the transition from the digital to the analog regime is governed by a critical voltage (V-CRIT), which determines the reliability margin in the post breakdown phase. Our results have a significant impact on the post-breakdown operational reliability of SiON and advanced high-kappa-SiOx interfacial layer gate stacks, wherein the SiOx layer seems to be the weakest link for percolation event. (C) 2013 AIP Publishing LLC.},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}


520.Conference

Raghavan, N.; Padovani, A.; Wu, X.; Shubhakar, K.; Bosman, M.; Larcher, L.; Pey, K. L.
The Buffering Role of High-Kappa in Post Breakdown Degradation Immunity of Advanced Dual Layer Dielectric Gate Stacks
2013 IEEE International Reliability Physics Symposium (IRPS), 2013.

Links | BibTeX 标签: 可靠性           


@conference{RN73,
title = {The Buffering Role of High-Kappa in Post Breakdown Degradation Immunity of Advanced Dual Layer Dielectric Gate Stacks},
author = {N. Raghavan and A. Padovani and X. Wu and K. Shubhakar and M. Bosman and L. Larcher and K. L. Pey},
doi = {10.1109/irps.2013.6532020},
year  = {2013},
date = {2013-01-01},
urldate = {2013-01-01},
booktitle = {2013 IEEE International Reliability Physics Symposium (IRPS)},
journal = {2013 IEEE International Reliability Physics Symposium (IRPS)},
pages = {5A.3.1-8},
keywords = {可靠性},
pubstate = {published},
tppubtype = {conference}
}


521.Journal Article

Raghavan, Nagarajan;  Wu, Xing;  Bosman, Michel;  Pey, Kin Leong.
Feasibility of SILC Recovery in Sub-10-angstrom EOT Advanced Metal Gate-High-kappa Stacks
In: IEEE Electron Device Letters, vol. 34, no. 8, pp. 1053-1055, 2013. ISSN: 0741-3106.

Links | BibTeX 标签: 可靠性           


@article{RN69,
title = {Feasibility of SILC Recovery in Sub-10-angstrom EOT Advanced Metal Gate-High-kappa Stacks},
author = {Nagarajan Raghavan and Xing Wu and Michel Bosman and Kin Leong Pey},
doi = {10.1109/led.2013.2268246},
issn = {0741-3106},
year  = {2013},
date = {2013-01-01},
urldate = {2013-01-01},
journal = {IEEE Electron Device Letters},
volume = {34},
number = {8},
pages = {1053-1055},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}
522.Conference

Sun, J.;  Wu, X.;  Liu, Q.;  Liu, M.;  Sun, L. T.
Real Time Observation of Nanoscale Multiple Conductive Filaments in RRAM by Using Advanced In-Situ TEM
Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, Ieee, 2013, ISBN: 978-1-4799-1241-4.

Abstract | Links | BibTeX 标签: 原位电镜可靠性           

In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the ZrO 2-based device. Using in-situ transmission electron microscopy, we observe in real time that multiple conductive filaments (CFs) are formed across the ZrO 2 layer between top electrode and bottom electrodes after forming. Various top electrode materials have been used, such as Cu, Ag, and Ni. Contrary to common belief, it is found that CF growth begins at the anode, rather than having to reach the cathode and grow backwards. Energy-dispersive X-ray spectroscopy results confirm that metal from the top electrode is the main composition of the CFs.           


@conference{RN38,
title = {Real Time Observation of Nanoscale Multiple Conductive Filaments in RRAM by Using Advanced In-Situ TEM},
author = {J. Sun and X. Wu and Q. Liu and M. Liu and L. T. Sun},
doi = {10.1109/ipfa.2013.6599223},
isbn = {978-1-4799-1241-4},
year  = {2013},
date = {2013-01-01},
urldate = {2013-01-01},
booktitle = {Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits},
pages = {560-562},
publisher = {Ieee},
abstract = {In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the ZrO 2-based device. Using in-situ transmission electron microscopy, we observe in real time that multiple conductive filaments (CFs) are formed across the ZrO 2 layer between top electrode and bottom electrodes after forming. Various top electrode materials have been used, such as Cu, Ag, and Ni. Contrary to common belief, it is found that CF growth begins at the anode, rather than having to reach the cathode and grow backwards. Energy-dispersive X-ray spectroscopy results confirm that metal from the top electrode is the main composition of the CFs.},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {conference}
}


523.Journal Article

Xu, F.;  Chen, J.;  Wu, X.;  Zhang, Y.;  Wang, Y. X.;  Sun, J.;  Bi, H. C.;  Lei, W.;  Ni, Y. R.;  Sun, L. T.
Graphene Scaffolds Enhanced Photogenerated Electron Transport in ZnO Photoanodes for High-Efficiency Dye-Sensitized Solar Cells
In: Journal of Physical Chemistry C, vol. 117, no. 17, pp. 8619-8627, 2013, ISSN: 1932-7447

Abstract | Links | BibTeX 标签: 原位电镜石墨烯           

Graphene and ZnO, as two star, materials Were united to constitute the photoanode of dye sensitized solar cells (DSSCs) Highly electronically conductive graphene scaffolds incorporated into ZnO hierarchically structured nanoparticle. (HSN) photoanodes could simultaneously capture and transport photogenerated electrons injected into ZnO by excited dyes. This strategy was beneficial for electrons to fluently transfer to the collection electrode due to the decreased internal resistance and electron recombination loss. On the basis of these advantages, the DSSC incorporating 1.2 wt % graphene into the ZnO photoanode with 3 mu m in thickness exhibited a high short-circuit photocurrent density (J(sc)) of 10.89 mA/cm(2) and a power conversion efficiency (PCE) of 3.19%, which were increased by 43.48% and 38.09%, respectively, compared with those of the DSSC without graphene. It was found that the incorporated graphene could markedly prolong electron lifetime (tau(eff)) and effective diffusion length (L-n), which allowed the utilization of thicker photoanodes that could afford enhanced surface area for higher dye loading and light harvesting. Thus, an impressively high PCE of 5.86% was achieved for the DSSC composed of 9-mu m-thick ZnO photoanode, which could be the highest PCE compared with previous reports with the same thick photoanodes. These results demonstrate potential application of graphene for improving the performance of DSSCs.

doi:10.1021/jp312379b           


@article{RN3,
title = {Graphene Scaffolds Enhanced Photogenerated Electron Transport in ZnO Photoanodes for High-Efficiency Dye-Sensitized Solar Cells},
author = {F. Xu and J. Chen and X. Wu and Y. Zhang and Y. X. Wang and J. Sun and H. C. Bi and W. Lei and Y. R. Ni and L. T. Sun},
doi = {10.1021/jp312379b},
issn = {1932-7447},
year  = {2013},
date = {2013-01-01},
urldate = {2013-01-01},
journal = {Journal of Physical Chemistry C},
volume = {117},
number = {17},
pages = {8619-8627},
abstract = {Graphene and ZnO, as two star, materials Were united to constitute the photoanode of dye sensitized solar cells (DSSCs) Highly electronically conductive graphene scaffolds incorporated into ZnO hierarchically structured nanoparticle. (HSN) photoanodes could simultaneously capture and transport photogenerated electrons injected into ZnO by excited dyes. This strategy was beneficial for electrons to fluently transfer to the collection electrode due to the decreased internal resistance and electron recombination loss. On the basis of these advantages, the DSSC incorporating 1.2 wt % graphene into the ZnO photoanode with 3 mu m in thickness exhibited a high short-circuit photocurrent density (J(sc)) of 10.89 mA/cm(2) and a power conversion efficiency (PCE) of 3.19%, which were increased by 43.48% and 38.09%, respectively, compared with those of the DSSC without graphene. It was found that the incorporated graphene could markedly prolong electron lifetime (tau(eff)) and effective diffusion length (L-n), which allowed the utilization of thicker photoanodes that could afford enhanced surface area for higher dye loading and light harvesting. Thus, an impressively high PCE of 5.86% was achieved for the DSSC composed of 9-mu m-thick ZnO photoanode, which could be the highest PCE compared with previous reports with the same thick photoanodes. These results demonstrate potential application of graphene for improving the performance of DSSCs.},
keywords = {原位电镜, 石墨烯},
pubstate = {published},
tppubtype = {article}
}


524.Journal Article

Zafar, Z.;  Ni, Z. H.;  Wu, X.;  Shi, Z. X.;  Nan, H. Y.;  Bai, J.;  Sun, L. T.
Evolution of Raman Spectra in Nitrogen Doped Graphene
In: Carbon, vol. 61, pp. 57-62, 2013, ISSN: 0008-6223.

Abstract | Links | BibTeX 标签: 石墨烯           

We present systematical Raman studies of nitrogen doped graphene (NG). Defective graphene by Ar+ ion bombardment was also studied for comparison. It was found that the defects/nitrogen dopants in NG are not homogenous. Our results also suggest that the G peak position and I-2D/I-G ratio cannot be simply used as fingerprint of doping concentration in NG. Both doping and compressive strain (as verified by transmission electron microscope) contribute to the shift of Raman peaks, while both doping and lattice defects contribute to the attenuation of 2D peak. Finally, the nature of defects in NG was probed and found that they are boundary defects. The detail analysis of the evolution of Raman spectra in NG would greatly help on the characterization and future application of this novel material. (C) 2013 Elsevier Ltd. All rights reserved.           


@article{RN21,
title = {Evolution of Raman Spectra in Nitrogen Doped Graphene},
author = {Z. Zafar and Z. H. Ni and X. Wu and Z. X. Shi and H. Y. Nan and J. Bai and L. T. Sun},
doi = {10.1016/j.carbon.2013.04.065},
issn = {0008-6223},
year  = {2013},
date = {2013-01-01},
urldate = {2013-01-01},
journal = {Carbon},
volume = {61},
pages = {57-62},
abstract = {We present systematical Raman studies of nitrogen doped graphene (NG). Defective graphene by Ar+ ion bombardment was also studied for comparison. It was found that the defects/nitrogen dopants in NG are not homogenous. Our results also suggest that the G peak position and I-2D/I-G ratio cannot be simply used as fingerprint of doping concentration in NG. Both doping and compressive strain (as verified by transmission electron microscope) contribute to the shift of Raman peaks, while both doping and lattice defects contribute to the attenuation of 2D peak. Finally, the nature of defects in NG was probed and found that they are boundary defects. The detail analysis of the evolution of Raman spectra in NG would greatly help on the characterization and future application of this novel material. (C) 2013 Elsevier Ltd. All rights reserved.},
keywords = {石墨烯},
pubstate = {published},
tppubtype = {article}
}


525.Conference

Pey, K. L.;  Raghavan, N.;  Liu, W. H.;  Wu, X.;  Shubhakar, K.;  Bosman, M.
Real-Time Analysis of Ultra-Thin Gate Dielectric Breakdown and Recovery: A Reality
2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) , 2013.

Links | BibTeX 标签: 原位电镜可靠性           


@conference{RN203,
title = {Real-Time Analysis of Ultra-Thin Gate Dielectric Breakdown and Recovery: A Reality},
author = {K. L. Pey and N. Raghavan and W. H. Liu and X. Wu and K. Shubhakar and M. Bosman},
doi = {10.1109/ipfa.2013.6599175},
year  = {2013},
date = {2013-01-01},
urldate = {2013-01-01},
booktitle = {2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) },
journal = {Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)},
pages = {319-31},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {conference}
}


526.Conference

Xing, Wu;  Litao, Sun
Advanced Methodologies for Atomic-Scale Nanofabrication and Dynamic Characterization
2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) , 2013.

Links | BibTeX 标签: 原位电镜可靠性           


@conference{RN198,
title = {Advanced Methodologies for Atomic-Scale Nanofabrication and Dynamic Characterization},
author = {Wu Xing and Sun Litao},
doi = {10.1109/ipfa.2013.6599188},
year  = {2013},
date = {2013-01-01},
urldate = {2013-01-01},
booktitle = {2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) },
journal = {Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)},
pages = {393-9},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {conference}
}


527.Journal Article

Zhu Z, Chu J H
QUASI TWO-DIMENSIONAL ANALYSIS OF THE SURFACE POTENTIAL FOR POLY-Si THIN FILM TRANSISTORS BASED ON THE CHANNEL POTENTIAL
International Journal of Modern Physics B, 2012, 26: 1250069.

| 标签: 传感器

528.Journal Article

Zhu L Q, Shao J, Lin T, Lu X, Zhu J Y, Tang X D, Chu J H
Photoionization absorption and zero-field spin splitting of acceptor-bound magnetic polaron in p-type Hg1-xMnxTe single crystals
Journal of Applied Physics, 2012, 111: 083502.

| 标签: 传感器

529.Journal Article

Zhu L Q, Lin T, Guo S L, Chu J H
The mechanism of negative magnetoresistance in nondegenerate p-type Hg1-xMnxTe (x > 0.17) monocrystal
Acta Physica Sinica, 2012, 61: 087501.

| 标签: 传感器

530.Journal Article

Zhou Y M, Yu G, Lin T, Dai N, Chu J H
Magneto-transport study of Landau level broadening in a gated AlGaAs/GaAs parabolic quantum well structure
Physica B-Condensed Matter, 2012, 407: 116-119.

| 标签: 传感器

531.Journal Article

Zhou W Z, Wang W, Chang Z G, Wang Y Z, Lan Z Q, Shang L Y, Lin T, Cui L J, Zeng Y P, Li G X, Yu C H, Guo J, Chu J H
Effects of scattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells
Journal of Applied Physics, 2012, 112: 023713.

| 标签: 传感器

532.Journal Article

Zhou D, Tang Y X, Wang F F, Xie D Z, Sun D Z, Shi W Z, Tian L, Sun J L, Meng X J, Chu J H, Kong W J, Luo L H
Improved dielectric and electrical insulating properties in Pb(Mg1/3Nb2/3)(0.62)Ti0.38O3 based multilayer ferroelectric thin films
Thin Solid Films, 2012, 522: 457-462.

| 标签: 传感器

533.Journal Article

Zhang Z X, Shu X Z, Chu J H, Li Z
Accurate atmospheric transmittance model for O-2 absorption band near 762 nm
Journal of Infrared and Millimeter Waves, 2012, 31: 203-209.

| 标签: 传感器

534.Journal Article

Zhang X H, Chen L, Lin T, He L, Guo S L, Chu J H
Photoluminescence and electrical characteristics of arsenic-doped HgCdTe
Journal of Infrared and Millimeter Waves, 2012, 31: 407-410.

| 标签: 传感器

535.Journal Article

Zhang W J, Duan Z H, Jiang K, Hu Z G, Wang G S, Dong X L, Chu J H
Electronic band structures, dielectric functions and interband transitions of relaxor ferroelectric (1-x) Pb (Sc1/2Ta1/2) O-3-xPbHfO(3) ceramics: A spectroscopic reflectance study
Acta Materialia, 2012, 60: 6175-6182.

| 标签: 传感器

536.Journal Article

Zhang J Z, Han M J, Li Y W, Hu Z G, Chu J H
Enhanced Raman scattering and photoluminescence of Bi3.25La0.75Ti3O12 nanotube arrays for optical and ferroelectric multifunctional applications
Applied Physics Letters, 2012, 101: 081903.

| 标签: 传感器

537.Journal Article

Zhan Z N, Hu Z G, Meng K K, Zhao J H, Chu J H
Temperature dependent phonon Raman scattering of Heusler alloy Co2MnxFe1-xAl/GaAs films grown by molecular-beam epitaxy
Rsc Advances, 2012, 2: 9899-9903.

| 标签: 传感器

538.Journal Article

Yue F Y, Chen L, Li Y W, Sun L, Yang P X, Chu J H
The determination of the x value in doped Hg1-xCdxTe by transmission spectra
Chinese Physics B, 2012, 21: 017804.

| 标签: 传感器

539.Journal Article

Yang J, He J, Zhu J Y, Bai W, Sun L, Meng X J, Tang X D, Duan C G, Remiens D, Qiu J H, Chu J H
Small polaron migration associated multiple dielectric responses of multiferroic DyMnO3 polycrystal in low temperature region
Applied Physics Letters, 2012, 101: 222904.

| 标签: 传感器

540.Journal Article

Xu X F, He X F, Wang H Y, Gu Q J, Shi S X, Xing H Z, Wang C R, Zhang J, Chen X S, Chu J H
The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures
Applied Surface Science, 2012, 261: 83-87.

| 标签: 传感器

541.Journal Article

Wei L M, Zhou Y M, Yu G L, Gao K H, Liu X Z, Lin T, Guo S L, Dai N, Chu J H
Guy A D. Effective g-factor in high-mobility InGaAs/InP quantum well
Acta Physica Sinica, 2012, 61: 127102.

| 标签: 传感器

542.Journal Article

Wang W, Zhou W, Wei S, Li X, Chang Z, Lin T, Shang L, Han K, Duan J, Tang N, Shen B, Chu J H
Magneto-resistance for two-dimensional electron gas in GaN/Al_xGa_(1-x)N heterostructure
Acta Physica Sinica, 2012, 61: 237302.

| 标签: 传感器

543.Conference

Tian L, Meng X, Yang J, Sun J, Yuan S, Wang J, Bai W, Chu J H
Relaxor properties and tunability of electron-irradiated thin poly(vinlidene fluoride-trifluoroethylene) copolymer film
proceedings of the Spring International Conference on Material Sciences and Technology (MST-S), Xian, PEOPLES R CHINA, F May 27-30, 2012, 2012.

| 标签: 传感器

544.Journal Article

Tian J J, Deng H M, Sun L, Kong H, Yang P X, Chu J H
Influence of Ni doping on phase transformation and optical properties of TiO2 films deposited on quartz substrates by sol-gel process
Applied Surface Science, 2012, 258: 4893-4897.

| 标签: 传感器

545.Journal Article

Tian J J, Deng H M, Sun L, Kong H, Yang P X, Chu J H
Effects of Co doping on structure and optical properties of TiO2 thin films prepared by sol-gel method
Thin Solid Films, 2012, 520: 5179-5183.

| 标签: 传感器

546.Journal Article

Tang Y X, Zhou D, Tian Y, Li X, Wang F F, Sun D Z, Shi W Z, Tian L, Sun J L, Meng X J, Chu J H
Low-Temperature Processing of High-Performance 0.74Pb(Mg1/3Nb2/3)O-3-0.26PbTiO(3) Thin Films on La0.6Sr0.4CoO3-Buffered Si Substrates for Pyroelectric Arrays Applications
Journal of the American Ceramic Society, 2012, 95: 1367-1371.

| 标签: 传感器

547.Journal Article

Sun Y H, Yang P X, Chen Y, Shang L Y, Chu J H
Numerical evaluation of grading benefits in CdS/CdZnTe band-gap back graded solar cells
Optoelectronics and Advanced Materials-Rapid Communications, 2012, 6: 280-283.

| 标签: 传感器

548.Journal Article

Sun L, He J, Chen Y, Yue F Y, Yang P X, Chu J H
Comparative study on Cu2ZnSnS4 thin films deposited by sputtering and pulsed laser deposition from a single quaternary sulfide target
Journal of Crystal Growth, 2012, 361: 147-151.

| 标签: 传感器

549.Journal Article

Shen Y D, Li Y W, Zhang J Z, Zhu X, Hu Z G, Chu J H
Excellent insulating behavior Al2O3 thin films grown by atomic layer deposition efficiently at room temperature
Optoelectronics and Advanced Materials-Rapid Communications, 2012, 6: 618-622.

| 标签: 传感器

550.Journal Article

Shen Y D, Li Y W, Li W M, Zhang J Z, Hu Z G, Chu J H
Growth of Bi2O3 Ultrathin Films by Atomic Layer Deposition
Journal of Physical Chemistry C, 2012, 116: 3449-3456.

| 标签: 传感器

551.Journal Article

Peng C, Yang P X, Wu L C, Song Z T, Rao F, Xu J A, Zhou X L, Zhu M, Liu B, Chu J H
N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory
Electrochemical and Solid State Letters, 2012, 15: H101-H104.

| 标签: 传感器

552.Journal Article

Peng C, Wu L C, Rao F, Song Z T, Yang P X, Cheng L M, Li J T, Zhou X L, Zhu M, Liu B, Chu J H
Improved Thermal Stability and Electrical Properties for Al-Sb-Te Based Phase-Change Memory
Ecs Solid State Letters, 2012, 1: 38-41.

| 标签: 传感器

553.Journal Article

Peng C, Wu L, Rao F, Song Z, Yang P, Song H, Ren K, Zhou X, Zhu M, Liu B, Chu J H
W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention
Applied Physics Letters, 2012, 101: 122108

| 标签: 传感器

554.Journal Article

Miao F J, Tao B R, Chu J H
Fabrication of arrays of one-dimensional porous silicon photonic crystal
Journal of Infrared and Millimeter Waves, 2012, 31: 311.

| 标签: 传感器

555.Journal Article

Lin T, Shang L Y, Zhou W Z, Meng X J, Sun J L, Yu G, Guo S L, Chu J H
Competing conduction mechanisms of two-dimensional electrons and bulk-like electrons in the n-type surface of the naturally oxidized p-type HgCdTe thin film
Applied Physics a-Materials Science & Processing, 2012, 106: 703-707.

| 标签: 传感器

556.Journal Article

Liao Y Y, Li Y W, Hu Z G, Chu J H
Temperature dependent phonon Raman scattering of highly a-axis oriented CoFe2O4 inverse spinel ferromagnetic films grown by pulsed laser deposition
Applied Physics Letters, 2012, 100: 071905.

| 标签: 传感器

557.Conference

Li Y, Jing C, Chu J H
Attenuated total reflectance (ATR) GeO2 hollow infrared waveguides deposited from aqueous germanate ion solutions with different GeO2 concentrations
proceedings of the 2011 Asia Communications and Photonics Conference and Exhibition, Shanghai, China, F Nov 13-16, 2011, 2012.

| 标签: 传感器

558.Journal Article

Li W, Jiang K, Zhang J, Chen X, Hu Z, Chen S, Sun L, Chu J H
Temperature dependence of phonon modes, dielectric functions, and interband electronic transitions in Cu2ZnSnS4 semiconductor films
Phys Chem Chem Phys, 2012, 14: 9936-9941.

| 标签: 传感器

559.Journal Article

Jing C B, Sun W, Wang W, Li Y, Chu J H
Morphology and crystal phase evolution of GeO2 in liquid phase deposition process
Journal of Crystal Growth, 2012, 338: 195-200.

| 标签: 传感器

560.Journal Article

Jiang K, Zhang J Z, Yu W L, Hu Z G, Chu J H
Manganese doping effects on interband electronic transitions, lattice vibrations, and dielectric functions of perovskite-type Ba0.4Sr0.6TiO3 ferroelectric ceramics
Applied Physics a-Materials Science & Processing, 2012, 106: 877-884.

| 标签: 传感器

561.Journal Article

Jiang K, Li W W, Chen X G, Zhan Z N, Sun L, Hu Z G, Chu J H
Doping effect on the phase transition temperature in ferroelectric SrBi2-xNdxNb2O9 layer-structured ceramics: a micro-Raman scattering study
Journal of Raman Spectroscopy, 2012, 43: 583-587.

| 标签: 传感器

562.Journal Article

He Y, Dou Y N, Ma X G, Chen S B, Chu J H
Passivation and stability of thermal atomic layer deposited Al2O3 on CZ-Si
Acta Physica Sinica, 2012, 61: 248102.

| 标签: 传感器

563.Journal Article

He J, Sun L, Ding N F, Kong H, Zuo S H, Chen S Y, Chen Y, Yang P X, Chu J H
Single-step preparation and characterization of Cu2ZnSn(SxSe1-x)(4) thin films deposited by pulsed laser deposition method
Journal of Alloys and Compounds, 2012, 529: 34-37.

| 标签: 传感器

564.Journal Article

He J, Sun L, Chen S Y, Chen Y, Yang P X, Chu J H
Composition dependence of structure and optical properties of Cu2ZnSn(S,Se)(4) solid solutions: An experimental study
Journal of Alloys and Compounds, 2012, 511: 129-132.

| 标签: 传感器

565.Journal Article

Han M, Jiang K, Zhang J, Yu W, Li Y, Hu Z, Chu J H
Structural, electronic band transition and optoelectronic properties of delafossite CuGa1-xCrxO2 (0 <= x <= 1) solid solution films grown by the sol-gel method
Journal of Materials Chemistry, 2012, 22: 18463-18470.

| 标签: 传感器

566.Journal Article

Gong S J, Duan C G, Zhu Z Q, Chu J H
Manipulation of magnetic anisotropy of Fe/graphene by charge injection
Applied Physics Letters, 2012, 100: 122410.

| 标签: 传感器

567.Journal Article

Ge J, Zuo S H, Jiang J C, Ma J H, Yang L H, Yang P X, Chu J H
Investigation of Se supply for the growth of Cu2ZnSn(SxSe1-x)(4) (x approximate to 0.02-0.05) thin films for photovoltaics
Applied Surface Science, 2012, 258: 7844-7848.

| 标签: 传感器

568.Journal Article

Ge J, Yu W L, Cao H, Jiang J C, Ma J H, Yang L H, Yang P X, Hu Z G, Chu J H
Fabrication of Cu2ZnSnS4 absorbers by sulfurization of Sn-rich precursors
Physica Status Solidi a-Applications and Materials Science, 2012, 209: 1493-1497.

| 标签: 传感器

569.Journal Article

Ge J, Wu Y H, Zhang C J, Zuo S H, Jiang J C, Ma J H, Yang P X, Chu J H
Comparative study of the influence of two distinct sulfurization ramping rates on the properties of Cu2ZnSnS4 thin films
Applied Surface Science, 2012, 258: 7250-7254.

| 标签: 传感器

570.Journal Article

Gao W L, Deng H M, Yang P X, Chu J H
Influences of Zn and Mnions co-dopants on the optical and ferroelectric properties of BaTiO3 thin films
Journal of Infrared and Millimeter Waves, 2012, 31: 193-196.

| 标签: 传感器

571.Journal Article

Gao K H, Wei L M, Yu G L, Yang R, Lin T, Wei Y F, Yang J R, Sun L, Dai N, Chu J H
Magnetotransport property of HgCdTe inversion layer
Acta Physica Sinica, 2012, 61: 027301.

| 标签: 传感器

572.Journal Article

Gao K H, Lin T, Wei L M, Liu X Z, Chen X, Yu G, Gu Y, Zhang Y G, Dai N, Chu J H
Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well
Solid State Communications, 2012, 152: 1042-1046.

| 标签: 传感器

573.Journal Article

Gao H, Zhang C-j, Wang S-l, Chu J H
Residual stress of Zr thin film deposited by magnetic sputtering
Laser Technology, 2012, 36: 742-744.

| 标签: 传感器

574.Journal Article

Gao C, Yang J, Meng X J, Bai W, Lin T, Sun J L, Chu J H
The effect of Nd doping on microstructure and electrical properties of BiFeO3 thin films
Journal of Infrared and Millimeter Waves, 2012, 31: 21-25.

| 标签: 传感器

575.Journal Article

Duan Z H, Yu Q, Wu J D, Sun J, Hu Z G, Chu J H
Lattice dynamics and dielectric functions of multiferroic BiFeO3/c-sapphire films determined by infrared reflectance spectra and temperature-dependent Raman scattering
Thin Solid Films, 2012, 525: 188-194.

| 标签: 传感器

576.Journal Article

Dou Y N, He Y, Ma X G, Qiao Q, Chen X J, Wang Y Q, Chen R, Chu J H
Effect of CH4 flow rate on the optical properties of Boron-doped a-SiC:H films
Journal of Infrared and Millimeter Waves, 2012, 31: 5-10.

| 标签: 传感器

577.Journal Article

Dou Y N, He Y, Huang C Y, Zhou C L, Ma X G, Chen R, Chu J H
Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si
Applied Physics a-Materials Science & Processing, 2012, 109: 673-677.

| 标签: 传感器

578.Journal Article

Ding N F, Deng H M, Yang P X, Chu J H
Structure and optical properties of BiFe1-xZnxO3 thin films fabricated by pulsed laser deposition
Materials Letters, 2012, 82: 71-73.

| 标签: 传感器

579.Journal Article

Deng H, Deng H M, Yang P X, Chu J H
Effect of Cr doping on the structure, optical and magnetic properties of multiferroic BiFeO3 thin films
Journal of Materials Science-Materials in Electronics, 2012, 23: 1215-1218.

| 标签: 传感器

580.Journal Article

Cui Y F, Zuo S H, Jiang J C, Chu J H
Effect of the concentration of Cu2+ in the electrolytes on CuInS2 thin films
Journal of Infrared and Millimeter Waves, 2012, 31: 102.

| 标签: 传感器

581.Journal Article

Chen X G, Li W W, Wu J D, Sun J, Jiang K, Hu Z G, Chu J H
Temperature dependence of electronic band transition in Mn-doped SnO2 nanocrystalline films determined by ultraviolet-near-infrared transmittance spectra
Materials Research Bulletin, 2012, 47: 111-116.

| 标签: 传感器

582.Journal Article

Cao H, Zhang C-j, Wang S-l, Chu J H
Research of uniformity of C8H8 filters
Laser Technology, 2012, 36: 623-626.

| 标签: 传感器

583.Journal Article

Cao H, Zhang C-j, Wang S-l, Chu J H
Research of uniformity of C8H8 filters
Laser Technology, 2012, 36: 623-626.

| 标签: 传感器

584.Journal Article

Bai W, Zhu J Y, Wang J L, Lin T, Yang J, Meng X J, Tang X D, Zhu Z Q, Chu J H
Effects of annealing temperature on the structures, ferroelectric and magnetic properties of Aurivillius Bi5Ti3FeO15 polycrystalline films
Journal of Magnetism and Magnetic Materials, 2012, 324: 2265-2270.

| 标签: 传感器

585.Journal Article

Bai W, Chen G, Zhu J Y, Yang J, Lin T, Meng X J, Tang X D, Duan C G, Chu J H
Dielectric responses and scaling behaviors in Aurivillius Bi6Ti3Fe2O18 multiferroic thin films
Applied Physics Letters, 2012, 100: 082902.

| 标签: 传感器

586.Journal Article


Chen, Y. N.; Goh, K. E. J.; Wu, X.; Lwin, Z. Z.; Singh, P. K.; Mahapatra, S.; Pey, K. L.
Temperature-Dependent Relaxation Current on Single and Dual Layer Pt Metal Nanocrystal-Based Al2O3/SiO2 Gate Stack
In: Journal of Applied Physics, vol. 112, no. 10, pp. 6, 2012, ISSN: 0021-8979.

Abstract | Links | BibTeX 标签: 可靠性           

We present a systematic investigation of the temperature dependent relaxation current behavior for single layer and dual layer Pt metal nanocrystal (MNC)-based Al2O3/SiO2 flash memory gate stacks. Stacks containing single layer Pt MNC exhibit a dual-slope behavior in the log-log plots of the relaxation transient, whereas those with dual layer Pt MNC exhibit a single-slope behavior. We propose a physical model embodying two competing relaxation mechanisms to explain the Pt MNC induced relaxation current-thermionic emission and the quantum tunneling. Based on this model, the dual-slope behavior of single layer MNC-based gate stack can be ascribed to the dominance of thermionic emission at the initial part and quantum tunneling at the tail part. In contrast, the single slope behavior of the dual layer metal nanocrystal-based stack arises from the dominance of the quantum tunneling throughout the relaxation. In addition, we verify that stacks containing dual layer MNC show better retention property than their single layer counterparts. Our results demonstrate that relaxation current measurements offer a simple way to assess the charge retention capability for MNC-based gate stacks. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764873]           

<Go to ISI>://WOS:000311969800145    

doi:10.1063/1.4764873          


@article{RN26,
title = {Temperature-Dependent Relaxation Current on Single and Dual Layer Pt Metal Nanocrystal-Based Al2O3/SiO2 Gate Stack},
author = {Y. N. Chen and K. E. J. Goh and X. Wu and Z. Z. Lwin and P. K. Singh and S. Mahapatra and K. L. Pey},
url = {<Go to ISI>://WOS:000311969800145},
doi = {10.1063/1.4764873},
issn = {0021-8979},
year  = {2012},
date = {2012-01-01},
urldate = {2012-01-01},
journal = {Journal of Applied Physics},
volume = {112},
number = {10},
pages = {6},
abstract = {We present a systematic investigation of the temperature dependent relaxation current behavior for single layer and dual layer Pt metal nanocrystal (MNC)-based Al2O3/SiO2 flash memory gate stacks. Stacks containing single layer Pt MNC exhibit a dual-slope behavior in the log-log plots of the relaxation transient, whereas those with dual layer Pt MNC exhibit a single-slope behavior. We propose a physical model embodying two competing relaxation mechanisms to explain the Pt MNC induced relaxation current-thermionic emission and the quantum tunneling. Based on this model, the dual-slope behavior of single layer MNC-based gate stack can be ascribed to the dominance of thermionic emission at the initial part and quantum tunneling at the tail part. In contrast, the single slope behavior of the dual layer metal nanocrystal-based stack arises from the dominance of the quantum tunneling throughout the relaxation. In addition, we verify that stacks containing dual layer MNC show better retention property than their single layer counterparts. Our results demonstrate that relaxation current measurements offer a simple way to assess the charge retention capability for MNC-based gate stacks. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764873]},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}
   


587.Journal Article

Liu, W. H.; Pey, K. L.; Raghavan, N.; Wu, X.; Bosman, M.
Triggering Voltage for Post-Breakdown Random Telegraph Noise in HfLaO Dielectric Metal Gate Metal-Oxide-Semiconductor Field Effect Transistors and Its Reliability Implications
In: Journal of Applied Physics, vol. 111, no. 2, pp. 5, 2012, ISSN: 0021-8979.

Abstract | Links | BibTeX 标签: 可靠性           

We report a triggering voltage V-trig for observing gate leakage current (I-g) random telegraph noise (RTN) in the post-breakdown regime of HfLaO dielectric metal gate stacks. V-trig, the onset voltage to observe RTN in degraded dielectrics, is highly dependent on breakdown hardness, which is controlled by the leakage current compliance (I-gl). This dependence is qualitatively analyzed using a percolation dilation model, where generation of additional traps either at different energy levels or spatial locations gives lower V-trig at higher I-gl. The magnitude of V-trig can be used as a direct indication of the impact of RTN on the performance of the transistor at device level, when V-trig is evaluated by comparing with the device operating voltage. (C) 2012 American Institute of Physics. [doi:10.1063/1.3676255]           

<Go to ISI>://WOS:000299792400059    

doi:10.1063/1.3676255          


@article{RN27,
title = {Triggering Voltage for Post-Breakdown Random Telegraph Noise in HfLaO Dielectric Metal Gate Metal-Oxide-Semiconductor Field Effect Transistors and Its Reliability Implications},
author = {W. H. Liu and K. L. Pey and N. Raghavan and X. Wu and M. Bosman},
url = {<Go to ISI>://WOS:000299792400059},
doi = {10.1063/1.3676255},
issn = {0021-8979},
year  = {2012},
date = {2012-01-01},
urldate = {2012-01-01},
journal = {Journal of Applied Physics},
volume = {111},
number = {2},
pages = {5},
abstract = {We report a triggering voltage V-trig for observing gate leakage current (I-g) random telegraph noise (RTN) in the post-breakdown regime of HfLaO dielectric metal gate stacks. V-trig, the onset voltage to observe RTN in degraded dielectrics, is highly dependent on breakdown hardness, which is controlled by the leakage current compliance (I-gl). This dependence is qualitatively analyzed using a percolation dilation model, where generation of additional traps either at different energy levels or spatial locations gives lower V-trig at higher I-gl. The magnitude of V-trig can be used as a direct indication of the impact of RTN on the performance of the transistor at device level, when V-trig is evaluated by comparing with the device operating voltage. (C) 2012 American Institute of Physics. [doi:10.1063/1.3676255]},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}
   


588.Journal Article

Raghavan, N.; Pey, K. L.; Wu, X.; Liu, W. H.; Bosman, M.
Percolative Model and Thermodynamic Analysis of Oxygen-Ion-Mediated Resistive Switching
In: IEEE Electron Device Letters, vol. 33, no. 5, pp. 712-714, 2012, ISSN: 0741-3106.

Abstract | Links | BibTeX 标签: 可靠性           

We present a statistical percolation model for retention lifetime assessment of resistive switching memory at the high-resistance state and correlate it to the soft breakdown phenomenon in ultrathin gate dielectrics. Electrical characterization in the low-resistance state shows that the location of oxygen-vacancy-based conductive filaments is almost randomly distributed and the trap generation rate across the oxide after reset transition is uniform. The constraints for the range of read voltages in the low and high conduction states, governed by the area of the device and the thermodynamics of oxygen ion transport, are presented.           

<Go to ISI>://WOS:000303322500028

doi:10.1109/led.2012.2187170          


@article{RN25,
title = {Percolative Model and Thermodynamic Analysis of Oxygen-Ion-Mediated Resistive Switching},
author = {N. Raghavan and K. L. Pey and X. Wu and W. H. Liu and M. Bosman},
url = {<Go to ISI>://WOS:000303322500028},
doi = {10.1109/led.2012.2187170},
issn = {0741-3106},
year  = {2012},
date = {2012-01-01},
urldate = {2012-01-01},
journal = {IEEE Electron Device Letters},
volume = {33},
number = {5},
pages = {712-714},
abstract = {We present a statistical percolation model for retention lifetime assessment of resistive switching memory at the high-resistance state and correlate it to the soft breakdown phenomenon in ultrathin gate dielectrics. Electrical characterization in the low-resistance state shows that the location of oxygen-vacancy-based conductive filaments is almost randomly distributed and the trap generation rate across the oxide after reset transition is uniform. The constraints for the range of read voltages in the low and high conduction states, governed by the area of the device and the thermodynamics of oxygen ion transport, are presented.},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}


589.Conference

Leong, Pey Kin; Raghavan, N.; Xing, Wu; Liu, W.; Bosman, M.
Dielectric Breakdown - Recovery in Logic and Resistive Switching in Memory - Bridging the Gap Between the Two Phenomena
2012, (2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ).

Links | BibTeX 标签: 原位电镜可靠性           


@conference{RN206,
title = {Dielectric Breakdown - Recovery in Logic and Resistive Switching in Memory - Bridging the Gap Between the Two Phenomena},
author = {Pey Kin Leong and N. Raghavan and Wu Xing and W. Liu and M. Bosman},
doi = {10.1109/icsict.2012.6467690},
year  = {2012},
date = {2012-01-01},
urldate = {2012-01-01},
journal = {2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)},
pages = {6 pp.-6 pp.},
note = {2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) },
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {conference}
}


590.Journal Article

Raghavan, N.; Pey, K. L.; Shubhakar, K.; Wu, X.; Liu, W. H.; Bosman, M.
Role of Grain Boundary Percolative Defects and Localized Trap Generation on The Reliability Statistics of High-Kappa Gate Dielectric Stacks
In: 2012 IEEE International Reliability Physics Symposium (IRPS), pp. 6A.1.1-11, 2012, (2012 IEEE International Reliability Physics Symposium (IRPS) 15-19 April 2012 Anaheim, CA, USA IEEE Electron Devices Soc. 0 978-1-4577-1678-2).

Links | BibTeX 标签: 可靠性           

doi:10.1109/irps.2012.6241862          

<Go to ISI>://INSPEC:12880200


@article{RN207,
title = {Role of Grain Boundary Percolative Defects and Localized Trap Generation on The Reliability Statistics of High-Kappa Gate Dielectric Stacks},
author = {N. Raghavan and K. L. Pey and K. Shubhakar and X. Wu and W. H. Liu and M. Bosman},
url = {<Go to ISI>://INSPEC:12880200},
doi = {10.1109/irps.2012.6241862},
year  = {2012},
date = {2012-01-01},
urldate = {2012-01-01},
journal = {2012 IEEE International Reliability Physics Symposium (IRPS)},
pages = {6A.1.1-11},
note = {2012 IEEE International Reliability Physics Symposium (IRPS) 
15-19 April 2012 
Anaheim, CA, USA 
IEEE Electron Devices Soc. 
0 
978-1-4577-1678-2},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}


591.Conference

Shubhakar, K.; Pey, K. L.; Bosman, M.; Thamankar, R.; Kushvaha, S. S.; Loke, Y. C.; Wang, Z. R.; Raghavan, N.; Wu, X.; O'Shea, S. J.
Nanoscale Physical Analysis of Localized Breakdown Events in HfO2/SiOx Dielectric Stacks: A Correlation Study of STM Induced BD with C-AFM and TEM
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2012.

Links | BibTeX 标签: 原位电镜可靠性           


@conference{RN210,
title = {Nanoscale Physical Analysis of Localized Breakdown Events in HfO2/SiOx Dielectric Stacks: A Correlation Study of STM Induced BD with C-AFM and TEM},
author = {K. Shubhakar and K. L. Pey and M. Bosman and R. Thamankar and S. S. Kushvaha and Y. C. Loke and Z. R. Wang and N. Raghavan and X. Wu and S. J. O'Shea},
doi = {10.1109/ipfa.2012.6306264},
year  = {2012},
date = {2012-01-01},
urldate = {2012-01-01},
booktitle = {2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)},
journal = {2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2012)},
pages = {7 pp.-7 pp.},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {conference}
}


592.Journal Article

Bai W, Gao Y Q, Zhu J Y, Meng X J, Lin T, Yang J, Zhu Z Q, Chu J H
Electrical, magnetic, and optical properties in multiferroic Bi5Ti3FeO15 thin films prepared by a chemical solution deposition route
Journal of Applied Physics, 2011, 109: 064901.

| 标签: 传感器

593.Journal Article

Liu, W. H.; Pey, K. L.; Wu, X.; Raghavan, N.; Padovani, A.; Larcher, L.; Vandelli, L.; Bosman, M.; Kauerauf, T. 

Threshold Shift observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of fForming Gas Anneal

In: Applied Physics Letters, vol. 99, no. 23, pp. 3, 2011, ISSN: 0003-6951.

Abstract | Links | BibTeX 标签: 可靠性           

The resistive switching mechanism, which is crucial for the operations of resistive random access memory (RRAM) devices, is investigated using HfO2 based MOSFETs. After the SET operation, MOSFETs exhibit a threshold voltage (V-T) shift that is found to be closely related to the formation of conductive filaments in the gate oxide. The RESET operation performed through a forming gas anneal treatment is found to have the same effect of applying a reverse polarity gate voltage sweep, as usually done in bipolar switching RRAM devices. After RESET, the gate current and VT measured shift back to their pristine levels, indicating the passivation of oxygen vacancies (forming the conductive path) as the most likely physical mechanism responsible for RRAMs RESET operation. Transmission electron microscopy analysis and physical simulations support these conclusions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3669525]           


   

@article{RN30,
title = {Threshold Shift observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of fForming Gas Anneal},
author = {W. H. Liu and K. L. Pey and X. Wu and N. Raghavan and A. Padovani and L. Larcher and L. Vandelli and M. Bosman and T. Kauerauf},
doi = {10.1063/1.3669525},
issn = {0003-6951},
year  = {2011},
date = {2011-01-01},
urldate = {2011-01-01},
journal = {Applied Physics Letters},
volume = {99},
number = {23},
pages = {3},
abstract = {The resistive switching mechanism, which is crucial for the operations of resistive random access memory (RRAM) devices, is investigated using HfO2 based MOSFETs. After the SET operation, MOSFETs exhibit a threshold voltage (V-T) shift that is found to be closely related to the formation of conductive filaments in the gate oxide. The RESET operation performed through a forming gas anneal treatment is found to have the same effect of applying a reverse polarity gate voltage sweep, as usually done in bipolar switching RRAM devices. After RESET, the gate current and VT measured shift back to their pristine levels, indicating the passivation of oxygen vacancies (forming the conductive path) as the most likely physical mechanism responsible for RRAMs RESET operation. Transmission electron microscopy analysis and physical simulations support these conclusions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3669525]},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}
   


   

594.Journal Article

Pey, K. L.; Raghavan, N.; Wu, X.; Liu, W. H.; Li, X.; Bosman, M.; Shubhakar, K.; Lwin, Z. Z.; Chen, Y. N.; Qin, H. L.; Kauerauf, T.

Physical Analysis of Breakdown in High-Kappa/Metal Gate Stacks Using TEM/EELS and STM for Reliability Enhancement (invited) 

In: Microelectronic Engineering, vol. 88, no. 7, pp. 1365-1372, 2011, ISSN: 0167-9317.

Abstract | Links | BibTeX 标签: 可靠性           

In this invited paper, we demonstrate how physical analysis techniques that are commonly used in integrated circuits failure analysis can be applied to detect the failure defects associated with ultrathin gate dielectric wear-out and breakdown in high-kappa materials and investigate the associated failure mechanism(s) based on the defect chemistry. The key contributions of this work are perhaps focused on two areas: (1) how to correlate the failure mechanisms in high-kappa/metal gate technology during wear-out and breakdown to device processing and materials and (2) how the understanding of these new failure mechanisms can be used in proposing "design for reliability" (DFR) initiatives for complex and expensive future CMOS nanoelectronic technology nodes of 22 nm and 15 nm. Hf-based high-kappa materials in conjunction with various gate electrode technologies will be used as main examples while other potential high-kappa gate materials such as cerium oxide (CeO2) will also be demonstrated to further illustrate the concept of DFR. (C) 2011 Elsevier B.V. All rights reserved.


@article{RN33,
title = {Physical Analysis of Breakdown in High-Kappa/Metal Gate Stacks Using TEM/EELS and STM for Reliability Enhancement (invited)},
author = {K. L. Pey and N. Raghavan and X. Wu and W. H. Liu and X. Li and M. Bosman and K. Shubhakar and Z. Z. Lwin and Y. N. Chen and H. L. Qin and T. Kauerauf},
doi = {10.1016/j.mee.2011.03.012},
issn = {0167-9317},
year  = {2011},
date = {2011-01-01},
urldate = {2011-01-01},
journal = {Microelectronic Engineering},
volume = {88},
number = {7},
pages = {1365-1372},
abstract = {In this invited paper, we demonstrate how physical analysis techniques that are commonly used in integrated circuits failure analysis can be applied to detect the failure defects associated with ultrathin gate dielectric wear-out and breakdown in high-kappa materials and investigate the associated failure mechanism(s) based on the defect chemistry. The key contributions of this work are perhaps focused on two areas: (1) how to correlate the failure mechanisms in high-kappa/metal gate technology during wear-out and breakdown to device processing and materials and (2) how the understanding of these new failure mechanisms can be used in proposing "design for reliability" (DFR) initiatives for complex and expensive future CMOS nanoelectronic technology nodes of 22 nm and 15 nm. Hf-based high-kappa materials in conjunction with various gate electrode technologies will be used as main examples while other potential high-kappa gate materials such as cerium oxide (CeO2) will also be demonstrated to further illustrate the concept of DFR. (C) 2011 Elsevier B.V. All rights reserved.},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}


595.Journal Article

Raghavan, N.; Liu, W. H.; Li, X. A.; Wu, X.; Bosman, M.; Pey, K. L.

Filamentation Mechanism of Resistive Switching in Fully Silicided High-kappa Gate Stacks

 In: IEEE Electron Device Letters, vol. 32, no. 4, pp. 455-457, 2011, ISSN: 0741-3106.

Abstract | Links | BibTeX 标签: 可靠性           

We study the mechanism of filamentation in resistive switching (RS) memory from an electrical perspective using a conventional metal-insulator-semiconductor (MIS) high-kappa metal gate transistor test structure and propose the possibility of using the same transistor structure for both logic and RS memory applications. The filament location is measured after every SET transition, and our investigations point to a "pseudorandom" nature of filament nucleation. Migration of highly diffusive nickel from source/drain silicide contacts toward the active silicon channel region transforms the existing MIS stack to MIM, thereby enabling the RS phenomenon.


   

@article{RN31,
title = {Filamentation Mechanism of Resistive Switching in Fully Silicided High-kappa Gate Stacks},
author = {N. Raghavan and W. H. Liu and X. A. Li and X. Wu and M. Bosman and K. L. Pey},
doi = {10.1109/led.2011.2107495},
issn = {0741-3106},
year  = {2011},
date = {2011-01-01},
urldate = {2011-01-01},
journal = {IEEE Electron Device Letters},
volume = {32},
number = {4},
pages = {455-457},
abstract = {We study the mechanism of filamentation in resistive switching (RS) memory from an electrical perspective using a conventional metal-insulator-semiconductor (MIS) high-kappa metal gate transistor test structure and propose the possibility of using the same transistor structure for both logic and RS memory applications. The filament location is measured after every SET transition, and our investigations point to a "pseudorandom" nature of filament nucleation. Migration of highly diffusive nickel from source/drain silicide contacts toward the active silicon channel region transforms the existing MIS stack to MIM, thereby enabling the RS phenomenon.},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}
   


   

596.Journal Article

Raghavan, N.; Pey, K. L.; Li, X.; Liu, W. H.; Wu, X.; Bosman, M.; Kauerauf, T. 

Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled Regime

In: IEEE Electron Device Letters, vol. 32, no. 6, pp. 716-718, 2011, ISSN: 0741-3106. 

Abstract | Links | BibTeX 标签: 可靠性           

We propose the bipolar-mode operation of resistive random access memory devices in a purely oxygen-vacancy (V-0)-controlled regime, which is achieved by very low compliance capping for forming/set transitions. This regime enables us to achieve a very low reset current of 10-100 nA, in which the governing mechanism for switching only involves the reversible drift of oxygen ions to and from oxygen soluble gate electrodes. The physical analysis of a gate stack in this V-0 regime confirms the absence of metallic nanofilaments. These findings pave the way for the realization of ultralow switching power RRAM devices.


   

@article{RN34,
title = {Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled Regime},
author = {N. Raghavan and K. L. Pey and X. Li and W. H. Liu and X. Wu and M. Bosman and T. Kauerauf},
doi = {10.1109/led.2011.2127443},
issn = {0741-3106},
year  = {2011},
date = {2011-01-01},
urldate = {2011-01-01},
journal = {IEEE Electron Device Letters},
volume = {32},
number = {6},
pages = {716-718},
abstract = {We propose the bipolar-mode operation of resistive random access memory devices in a purely oxygen-vacancy (V-0)-controlled regime, which is achieved by very low compliance capping for forming/set transitions. This regime enables us to achieve a very low reset current of 10-100 nA, in which the governing mechanism for switching only involves the reversible drift of oxygen ions to and from oxygen soluble gate electrodes. The physical analysis of a gate stack in this V-0 regime confirms the absence of metallic nanofilaments. These findings pave the way for the realization of ultralow switching power RRAM devices.},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}
   


   

597.Journal Article

Raghavan, N.; Pey, K. L.; Liu, W. H.; Wu, X.; Li, X.; Bosman, M.

Evidence for Compliance Controlled Oxygen Vacancy and Metal Filament Based Resistive Switching Mechanisms in RRAM 

In: Microelectronic Engineering, vol. 88, no. 7, pp. 1124-1128, 2011, ISSN: 0167-9317. 

Links | BibTeX 标签: 可靠性           

<Go to ISI>://WOS:000292572700021

doi:10.1016/j.mee.2011.03.027


@article{RN35,
title = {Evidence for Compliance Controlled Oxygen Vacancy and Metal Filament Based Resistive Switching Mechanisms in RRAM},
author = {N. Raghavan and K. L. Pey and W. H. Liu and X. Wu and X. Li and M. Bosman},
url = {<Go to ISI>://WOS:000292572700021},
doi = {10.1016/j.mee.2011.03.027},
issn = {0167-9317},
year  = {2011},
date = {2011-01-01},
urldate = {2011-01-01},
journal = {Microelectronic Engineering},
volume = {88},
number = {7},
pages = {1124-1128},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}


598.Journal Article

Raghavan, N.; Pey, K. L.; Wu, X.; Liu, W. H.; Li, X. A.; Bosman, M.; Kauerauf, T.

Oxygen-Soluble Gate Electrodes for Prolonged High-kappa Gate-Stack Reliability

In: IEEE Electron Device Letters, vol. 32, no. 3, pp. 252-254, 2011, ISSN: 0741-3106.

Abstract | Links | BibTeX 标签: 可靠性           

We propose the use of high-oxygen-solubility metal-gate electrodes as a material of choice for high-kappa gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metal-oxide-semiconductor devices with these gate electrodes reveal that the application of low negative bias stress after a soft-BD (SBD) event helps to restore the oxygen ions and passivate the oxygen vacancy traps that comprise the percolation path. This can be a simple yet effective design-for-reliability tool to initiate the self-repair of the percolation path and operate the circuit for a prolonged period after repair. The only requirement for achieving this SBD reversibility is to choose gate electrodes that can serve as good oxygen reservoirs.


@article{RN29,
title = {Oxygen-Soluble Gate Electrodes for Prolonged High-kappa Gate-Stack Reliability},
author = {N. Raghavan and K. L. Pey and X. Wu and W. H. Liu and X. A. Li and M. Bosman and T. Kauerauf},
doi = {10.1109/led.2010.2099096},
issn = {0741-3106},
year  = {2011},
date = {2011-01-01},
urldate = {2011-01-01},
journal = {IEEE Electron Device Letters},
volume = {32},
number = {3},
pages = {252-254},
abstract = {We propose the use of high-oxygen-solubility metal-gate electrodes as a material of choice for high-kappa gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metal-oxide-semiconductor devices with these gate electrodes reveal that the application of low negative bias stress after a soft-BD (SBD) event helps to restore the oxygen ions and passivate the oxygen vacancy traps that comprise the percolation path. This can be a simple yet effective design-for-reliability tool to initiate the self-repair of the percolation path and operate the circuit for a prolonged period after repair. The only requirement for achieving this SBD reversibility is to choose gate electrodes that can serve as good oxygen reservoirs.},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}


599. Journal Article

Wu, X.; Fang, Z.; Li, K.; Bosman, M.; Raghavan, N.; Li, X.; Yu, H. Y.; Singh, N.; Lo, G. Q.; Zhang, X. X.; Pey, K. L. 

Chemical Insight Into Origin of Forming-Free Resistive Random-Access Memory Devices

In: Applied Physics Letters, vol. 99, no. 13, pp. 3, 2011, ISSN: 0003-6951.

Links | BibTeX 标签: 原位电镜可靠性           

doi:10.1063/1.3645623           


@article{RN6,
title = {Chemical Insight Into Origin of Forming-Free Resistive Random-Access Memory Devices},
author = {X. Wu and Z. Fang and K. Li and M. Bosman and N. Raghavan and X. Li and H. Y. Yu and N. Singh and G. Q. Lo and X. X. Zhang and K. L. Pey},
doi = {10.1063/1.3645623},
issn = {0003-6951},
year  = {2011},
date = {2011-01-01},
urldate = {2011-01-01},
journal = {Applied Physics Letters},
volume = {99},
number = {13},
pages = {3},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}


600. Journal Article

Wu, X.; Li, K.; Raghavan, N.; Bosman, M.; Wang, Q. X.; Cha, D. K.; Zhang, X. X.; Pey, K. L.Uncorrelated Multiple Conductive Filament Nucleation and Rupture in Ultra-Thin High-Kappa Dielectric Based Resistive Random Access Memory

In: Applied Physics Letters, vol. 99, no. 9, pp. 3, 2011, ISSN: 0003-6951.

Links | BibTeX 标签: 原位电镜可靠性           


@article{RN8,
title = {Uncorrelated Multiple Conductive Filament Nucleation and Rupture in Ultra-Thin High-Kappa Dielectric Based Resistive Random Access Memory},
author = {X. Wu and K. Li and N. Raghavan and M. Bosman and Q. X. Wang and D. K. Cha and X. X. Zhang and K. L. Pey},
doi = {10.1063/1.3624597},
issn = {0003-6951},
year  = {2011},
date = {2011-01-01},
urldate = {2011-01-01},
journal = {Applied Physics Letters},
volume = {99},
number = {9},
pages = {3},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}


601.Journal Article

Wu, X.; Pey, K. L.; Raghavan, N.; Liu, W. H.; Li, X.; Bai, P.; Zhang, G.; Bosman, M.

Using Post-Breakdown Conduction Study in A MIS Structure to Better Understand The Resistive Switching Mechanism in An MIM Stack

In: Nanotechnology, vol. 22, no. 45, pp. 7, 2011, ISSN: 0957-4484.

Links | BibTeX 标签: 原位电镜可靠性           


@article{RN5,
title = {Using Post-Breakdown Conduction Study in A MIS Structure to Better Understand The Resistive Switching Mechanism in An MIM Stack},
author = {X. Wu and K. L. Pey and N. Raghavan and W. H. Liu and X. Li and P. Bai and G. Zhang and M. Bosman},
doi = {10.1088/0957-4484/22/45/455702},
issn = {0957-4484},
year  = {2011},
date = {2011-01-01},
urldate = {2011-01-01},
journal = {Nanotechnology},
volume = {22},
number = {45},
pages = {7},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}


602. Conference

Liu, W. H.; Pey, K. L.; Raghavan, N.; Wu, X.; Bosman, M.; Kauerauf, T.

Random Telegraph Noise Reduction in Metal Gate High-Kappa Stacks by Bipolar Switching and the Performance Boosting Technique

2011 IEEE International Reliability Physics Symposium (IRPS), 2011.

Links | BibTeX 标签: 可靠性           


@conference{RN209,
title = {Random Telegraph Noise Reduction in Metal Gate High-Kappa Stacks by Bipolar Switching and the Performance Boosting Technique},
author = {W. H. Liu and K. L. Pey and N. Raghavan and X. Wu and M. Bosman and T. Kauerauf},
doi = {10.1109/irps.2011.5784474},
year  = {2011},
date = {2011-01-01},
urldate = {2011-01-01},
booktitle = {2011 IEEE International Reliability Physics Symposium (IRPS)},
pages = {3A.1 (8 pp.)-3A.1 (8 pp.)},
keywords = {可靠性},
pubstate = {published},
tppubtype = {conference}
}


603.Conference

Tran, X. A.;  Gao, B.;  Kang, J. F.;  Wu, X.;  Wu, L.;  Fang, Z.;  Wang, Z. R.;  Pey, K. L.;  Yeo, Y. C.;  Du, A. Y.;  Liu, M.;  Nguyen, B. Y.;  Li, M. F.;  Yu, H. Y.

Self-Rectifying and Forming-Free Unipolar HfOx Based-High Performance RRAM Built by Fab-Avaialbe Materials

2011 IEEE International Electron Devices Meeting (IEDM) ,

Links | BibTeX 标签: 原位电镜


@conference{RN208,
title = {Self-Rectifying and Forming-Free Unipolar HfOx Based-High Performance RRAM Built by Fab-Avaialbe Materials},
author = {X. A. Tran and B. Gao and J. F. Kang and X. Wu and L. Wu and Z. Fang and Z. R. Wang and K. L. Pey and Y. C. Yeo and A. Y. Du and M. Liu and B. Y. Nguyen and M. F. Li and H. Y. Yu},
doi = {10.1109/iedm.2011.6131648},
year  = {2011},
date = {2011-01-01},
urldate = {2011-01-01},
booktitle = {2011 IEEE International Electron Devices Meeting (IEDM) },
journal = {2011 IEEE International Electron Devices Meeting (IEDM 2011)},
pages = {31.2 (4 pp.)-31.2 (4 pp.)},
keywords = {原位电镜},
pubstate = {published},
tppubtype = {conference}
}


604.Journal Article

Zhu M, Sun L, Li W W, Yu W L, Li Y W, Hu Z G, Chu J H
Lattice vibrations and dielectric functions of ferroelectric SrBi2-x,NdxNb2O9 bismuth layer-structured ceramics determined by infrared reflectance spectra
Materials Research Bulletin, 2010, 45: 1654-1658.

| 标签: 传感器

605.Journal Article

Zhu J J, Li W W, Li Y W, Shen Y D, Hu Z G, Chu J H
Effects of applied electrical field on electronic structures in LaNiO3 conductive metallic oxide film: An optical spectroscopic study
Applied Physics Letters, 2010, 97: 211904.

| 标签: 传感器

606.Journal Article

Zhou Y M, Yu G L, Gao K H, Lin T, Guo S L, Chu J H, Dai N
Magneto-tunneling effect in weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure
Acta Physica Sinica, 2010, 59: 4221-4225.

| 标签: 传感器

607.Journal Article

Zhou Y M, Yu G, Wei L M, Gao K H, Zhou W Z, Lin T, Shang L Y, Guo S L, Chu J H, Dai N, Austing D G
Experimental approaches to zero-field spin splitting in a gated high-mobility In0.53Ga0.47As/InP quantum well structure: Weak antilocalization and beating pattern
Journal of Applied Physics, 2010, 107: 053708.

| 标签: 传感器

608.Journal Article

Zhou Y M, Gao K H, Yu G, Zhou W Z, Lin T, Guo S L, Chu J H, Dai N
Gate-controlled electron-electron interactions in an In0:53Ga0:47As/InP quantum well structure (vol 150, pg 251, 2010)
Solid State Communications, 2010, 150: 901-901.

| 标签: 传感器

609.Journal Article

Zhou Y M, Gao K H, Yu G, Zhou W Z, Lin T, Guo S L, Chu J H, Dai N
Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure
Solid State Communications, 2010, 150: 251-253.

| 标签: 传感器

610.Journal Article

Zhou W Z, Lin T, Shang L Y, Yu G, Gao K H, Zhou Y M, Wei L M, Cui L J, Zeng Y P, Guo S L, Chu J H
Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction
Physical Review B, 2010, 81: 195312.

| 标签: 传感器

611.Journal Article

Zhou W, Dai X, Lin T, Xu Q, Chu J H
Study of electricproperties for As-doped Hg1-xCdxTe multi-carrier system
Journal of Guangxi University, 2010, 35: 821-826.

| 标签: 传感器

612.Journal Article

Zhou W, Dai X, Lin T, Shang L, Cui L, Zeng Y, Chu J H
Zero-field spin splitting of two-dimensional electron gas in In0.53Ga0.47As/In0.52Al0.48As quantum well
Journal of Guangxi University, 2010, 35: 1027-1031.

| 标签: 传感器

613.Journal Article

Zhang Z X A, Lin T E, Chu J H
Remote sounding of atmospheric pressure profile from space, part 2: channel selection
Journal of Applied Remote Sensing, 2010, 4: 043522.

| 标签: 传感器

614.Journal Article

Zhang Z X, Lin T, Chu J H
Remote sounding of atmospheric pressure profile from space, part 3: error estimation
Journal of Applied Remote Sensing, 2010, 4: 0435360.

| 标签: 传感器

615.Journal Article

Zhang Z L, Deng H M, Guo M, Yang P X, Chu J H
PREPARATION AND ELECTRICAL PROPERTIES OF Bi-2 VO5.5 FERROELECTRIC THIN FILM
Journal of Infrared and Millimeter Waves, 2010, 29: 248.

| 标签: 传感器

616.Journal Article

Zhang T, Hu G J, Shang J L, Sun Y, Chu J H, Dai N
Micro-Structures and Optical Properties of PbZr0.4Ti0.6O3 Multilayer Films Deposited on FTO-Coated Glass Substrate
Journal of Infrared and Millimeter Waves, 2010, 29: 176-179.

| 标签: 传感器

617.Journal Article

Zhang T, Hu G J, Bu H J, Wu J, Chu J H, Dai N
Evolution of microstructure and related properties of PbZr0.4Ti0.6O3 films on F-doped tin oxide with annealing temperature
Journal of Applied Physics, 2010, 107: 084103.

| 标签: 传感器

618.Journal Article

Zhang J Z, Shen Y D, Li Y W, Hu Z G, Chu J H
Composition Dependence of Microstructure, Phonon Modes, and Optical Properties in Rutile TiO2:Fe Nanocrystalline Films Prepared by a Nonhydrolytic Sol-Gel Route
Journal of Physical Chemistry C, 2010, 114: 15157-15164.

| 标签: 传感器

619.Journal Article

Yue F Y, Chen L, Li Y W, Hu Z G, Sun L, Yang P X, Chu J H
Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy
Chinese Physics B, 2010, 19: 117106.

| 标签: 传感器

620.Journal Article

Yuan S Z, Meng X J, Sun J L, Wang J L, Liu P F, Chu J H
A Sharp Peak of the Differential Conductivity of P(VDF-TrFe) Films Near the Coercive Field
Ferroelectrics, 2010, 405: 133-137.

| 标签: 传感器

621.Journal Article

Yu W L, Li W W, Wu J D, Sun J, Zhu J J, Zhu M, Hu Z G, Chu J H
Far-Infrared-Ultraviolet Dielectric Function, Lattice Vibration, and Photoluminescence Properties of Diluted Magnetic Semiconductor Sn1-xMnxO2/c-Sapphire Nanocrystalline Films
Journal of Physical Chemistry C, 2010, 114: 8593-8600.

| 标签: 传感器

622.Journal Article

Yang J, Gao Y Q, Wu J, Huang Z M, Meng X J, Shen M R, Sun J L, Chu J H
Temperature dependent optical properties of Mn doped (Pb, Sr)TiO3 ferroelectric films in absorption region: Electron-phonon interaction
Journal of Applied Physics, 2010, 108: 114102.

| 标签: 传感器

623.Journal Article

Wu J, Huang Z M, Hou Y, Gao Y Q, Chu J H
Structural, electrical, and magnetic properties of Mn2.52-xCoxNi0.48O4 films
Journal of Applied Physics, 2010, 107: 053716.

| 标签: 传感器

624.Journal Article

Wu J, Huang Z, Hou Y, Gao Y, Chu J H
Variation in hopping conduction across the magnetic transition in spinel Mn1.56Co0.96Ni0.48O4 films
Applied Physics Letters, 2010, 96: 082103

| 标签: 传感器

625.Journal Article

Wang J Q, Mao H B, Yu J G, Zhao Q, Zhang H Y, Yang P X, Zhu Z Q, Chu J H
Electrically tunable electron g factors in coupled InAs/GaAs pyramid quantum dots
Applied Physics Letters, 2010, 96: 062108.

| 标签: 传感器

626.Journal Article

Wang J L, Meng X J, Gao Y Q, Huang Z M, Shen H, Sun J L, Chu J H
Optical and Electric Properties of Poly (Vinylidene Fluoried-Trifluoroethylene) Thin Film by Langmuir-Blodgett Technique
Journal of Infrared and Millimeter Waves, 2010, 29: 406.

| 标签: 传感器

627.Journal Article

Wang J L, Gao Y Q, Huang Z M, Meng X J, Yuan S Z, Yang J, Sun J L, Chu J H
The Optical Dispersion of Langmuir-Blodgett Terpolymer Films
Ferroelectrics, 2010, 405: 120-125.

| 标签: 传感器

628.Journal Article

Sun Y H, Lin T, Gao K H, Hu Z G, Wu H Z, Yang P X, Dai N, Chu J H
Temperature dependent transport properties of p-Pb1-xMnxSe films
Journal of Applied Physics, 2010, 108: 043709.

| 标签: 传感器

629.Journal Article

Shao J, Chen L, Zha F X, Lu W, Lu X A, Guo S L, He L, Chu J H
Modulation mechanism of infrared photoreflectance in narrow-gap HgCdTe epilayers: A pump power dependent study
Journal of Applied Physics, 2010, 108: 023518.

| 标签: 传感器

630.Journal Article

Shao J, Chen L, Lu W, Lu X, Zhu L Q, Guo S L, He L, Chu J H
Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs
Applied Physics Letters, 2010, 96: 121915.

| 标签: 传感器

631.Journal Article

Luo M, Tang Z, Zheng J, Zhu Z Q, Chu J H
First-principles studies of interlayer exchange coupling in (Ga, Mn)As-based diluted magnetic semiconductor multilayers
Journal of Applied Physics, 2010, 108: 053703.

| 标签: 传感器

632.Journal Article

Liu P F, Wang J L, Meng X J, Yang J, Dkhil B, Chu J H
Huge electrocaloric effect in Langmuir-Blodgett ferroelectric polymer thin films
New Journal of Physics, 2010, 12: 023035.

| 标签: 传感器

633.Journal Article

Liu P F, Meng X J, Wang J L, Chu J H, Gemeiner P, Geiger S, Dkhil B
Structure Change of Poly(Vinylidene Fluoride-Trifluoroethylene) Ferroelectric Thin Films on Different Electrodes
Ferroelectrics, 2010, 405: 183-187.

| 标签: 传感器

634.Journal Article

Li Y W, Shen Y D, Yue F Y, Hu Z G, Ma X M, Chu J H
Preparation and characterization of BiFeO3/LaNiO3 heterostructure films grown on silicon substrate
Journal of Crystal Growth, 2010, 312: 617-620.

| 标签: 传感器

635.Journal Article

Li W W, Zhu J J, Wu J D, Sun J, Zhu M, Hu Z G, Chu J H
Composition and Temperature Dependence of Electronic and Optical Properties in Manganese Doped Tin Dioxide Films on Quartz Substrates Prepared by Pulsed Laser Deposition
Acs Applied Materials & Interfaces, 2010, 2: 2325-2332.

| 标签: 传感器

636.Journal Article

Li W W, Zhu J J, Wu J D, Gan J, Hu Z G, Zhu M, Chu J H
Temperature dependence of electronic transitions and optical properties in multiferroic BiFeO3 nanocrystalline film determined from transmittance spectra
Applied Physics Letters, 2010, 97: 121102.

| 标签: 传感器

637.Journal Article

Li W W, Yu W L, Jiang Y J, Jing C B, Zhu J Y, Zhu M, Hu Z G, Tang X D, Chu J H
Structure, Optical, and Room-Temperature Ferromagnetic Properties of Pure and Transition-Metal-(Cr, Mn, and Ni)-Doped ZnO Nanocrystalline Films Grown by the Sol Gel Method
Journal of Physical Chemistry C, 2010, 114: 11951-11957.

| 标签: 传感器

638.Journal Article

Li W W, Hu Z G, Li Y W, Zhu M, Zhu Z Q, Chu J H. Growth
Microstructure, and Infrared-Ultraviolet Optical Conductivity of La0.5Sr0.5CoO3 Nanocrystalline Films on Silicon Substrates by Pulsed Laser Deposition
Acs Applied Materials & Interfaces, 2010, 2: 896-902.

| 标签: 传感器

639.Journal Article

Jing C B, Zang X D, Bai W, Chu J H, Liu A Y
Aqueous germanate ion solution promoted synthesis of worm-like crystallized Ge nanostructures under ambient conditions (vol 20, 505607, 2009)
Nanotechnology, 2010, 21: 109801.

| 标签: 传感器

640.Journal Article

Jing C B, Shan H Y, Zhang C J, Chu J H
Preparation of thick GeO2 glass film with high UV photosensitivity
Journal of Non-Crystalline Solids, 2010, 356: 2884-2888.

| 标签: 传感器

641.Journal Article

Jing C B, Jiang Y J, Bai W, Chu J H, Liu A Y
Synthesis of Mn-doped ZnO diluted magnetic semiconductors in the presence of ethyl acetoacetate under solvothermal conditions
Journal of Magnetism and Magnetic Materials, 2010, 322: 2395-2400.

| 标签: 传感器

642.Journal Article

Huang D J, Deng H M, Yang P X, Chu J H
Optical and electrical properties of multiferroic bismuth ferrite thin films fabricated by sol-gel technique
Materials Letters, 2010, 64: 2233-2235.

| 标签: 传感器

643.Journal Article

Hu G J, Zhang T, Bu H J, Sun J L, Chu J H, Dai N, Zhu D M, Wu Y Z
An abnormal dielectric relaxation phenomenon observed in PbZr(0.38)Ti(0.62)O(3) multilayers
Journal of Applied Physics, 2010, 107: 094107.

| 标签: 传感器

644.Journal Article

Han J Q, Wang Y P, Guo F M, Xu B, Xiong D Y, Zhou M C, Ye Y C, Zhu Z Q, Chu J H
Electrical behavior on packaging module for the novel photoelectric sensor
proceedings of the 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, Xiamen, China, F 20-23 Jan. 2010, 2010. IEEE.

| 标签: 传感器

645.Journal Article

Gong S J, Sheng W, Yang Z Q, Chu J H
First-principles investigation of bilayer graphene with intercalated C, N or O atoms
J Phys Condens Matter, 2010, 22: 245502.

| 标签: 传感器

646.Journal Article

Gao Y Q, Ma J H, Huang Z M, Hou Y, Wu J, Chu J H
Effects of substrate temperature on the dielectric function of ZnO films
Applied Physics a-Materials Science & Processing, 2010, 98: 129-134.

| 标签: 传感器

647.Journal Article

Gao Y Q, Huang Z M, Hou Y, Wu J, Li Z Q, Chu J H
Crystallization-dependent magnetic properties of Mn1.56Co0.96Ni0.48O4 thin films
Applied Surface Science, 2010, 256: 2552-2556.

| 标签: 传感器

648.Journal Article

Gao K H, Yu G, Zhou Y M, Wei L M, Lin T, Shang L Y, Sun L, Yang R, Zhou W Z, Dai N, Chu J H, Austing D G, Gu Y, Zhang Y G
Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells
Journal of Applied Physics, 2010, 108: 063701.

| 标签: 传感器

649.Journal Article

Gao C, Meng X J, Sun J L, Ma J H, Lin T, Chu J H
Ferroelectric Properties of BiFeO3 Thin Films Prepared via a Simple Chemical Solution Deposition
Ferroelectrics, 2010, 406: 137-142.

| 标签: 传感器

650.Conference

Chu J H
Spin-related phenomena in nano-structure of semiconductors
proceedings of the 3rd IEEE International Nanoelectronics Conference, Hong Kong, PEOPLES R CHINA, F Jan 03-08, 2010, 2010.

| 标签: 传感器

651.Journal Article

Bai W, Meng X J, Lin T, Zhu X, Ma J H, Liu W J, Sun J L, Chu J H
Magnetic field induced ferroelectric and dielectric properties in Pb(Zr0.5Ti0.5)O-3 films containing Fe3O4 nanoparticles
Thin Solid Films, 2010, 518: 3721-3724.

| 标签: 传感器

652.Journal Article

Bosman, M.; Zhang, Y.; Cheng, C. K.; Li, X.; Wu, X.; Pey, K. L.; Lin, C. T.; Chen, Y. W.; Hsu, S. H.; Hsu, C. H.

The Distribution of Chemical Elements in Al- or La-Capped High-Kappa Metal Gate Stacks

In: Applied Physics Letters, vol. 97, no. 10, pp. 3, 2010, ISSN: 0003-6951.

Links | BibTeX 标签: 可靠性           


@article{RN36,
title = {The Distribution of Chemical Elements in Al- or La-Capped High-Kappa Metal Gate Stacks},
author = {M. Bosman and Y. Zhang and C. K. Cheng and X. Li and X. Wu and K. L. Pey and C. T. Lin and Y. W. Chen and S. H. Hsu and C. H. Hsu},
doi = {10.1063/1.3478446},
issn = {0003-6951},
year  = {2010},
date = {2010-01-01},
urldate = {2010-01-01},
journal = {Applied Physics Letters},
volume = {97},
number = {10},
pages = {3},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}


653.Conference

Pey, K. L.; Raghavan, N.; Li, X.; Liu, W. H.; Shubhakar, K.; Wu, X.; Bosman, M.

New Insight Into the TDDB and Breakdown Reliability of Novel High-Kappa Gate Dielectric Stacks

2010 IEEE International Reliability Physics Symposium, Ieee, 2010, ISBN: 978-1-4244-5430-3.

Abstract | Links | BibTeX 标签: 原位电镜可靠性           

In order to achieve aggressive scaling of the equivalent oxide thickness (EOT) and simultaneously reduce leakage currents in logic devices, silicon-based oxides (SiON / SiO 2) have been replaced by physically thicker high-kappa transition metal oxide thin films by many manufacturers starting from the 45 nm technology node. CMOS process compatibility, integration and reliability are the key issues to address while introducing high-kappa at the front end. In this study, we analyze in-depth the reliability aspect of high-kappa dielectrics focusing on both the time-dependent-dielectric breakdown (TDDB) and the post breakdown evolution stage. Electrical characterization, physical failure analysis, statistical reliability modeling as well as atomistic simulations have all been used to achieve a comprehensive understanding of the physics of failure in HK and the associated microstructural defects and failure mechanisms. The role played by different gate materials ranging from poly-Si rarr FUSI rarr metal gate and different HK materials (HfO 2, HfSiON, HfZrO 4) is also investigated. Based on the results obtained, we emphasize the need and propose a few approaches of design for reliability (DFR) in high-kappa gate stacks.


   

@conference{RN50,
title = {New Insight Into the TDDB and Breakdown Reliability of Novel High-Kappa Gate Dielectric Stacks},
author = {K. L. Pey and N. Raghavan and X. Li and W. H. Liu and K. Shubhakar and X. Wu and M. Bosman},
doi = {10.1109/irps.2010.5488805},
isbn = {978-1-4244-5430-3},
year  = {2010},
date = {2010-01-01},
urldate = {2010-01-01},
booktitle = {2010 IEEE International Reliability Physics Symposium},
pages = {354-363},
publisher = {Ieee},
abstract = {In order to achieve aggressive scaling of the equivalent oxide thickness (EOT) and simultaneously reduce leakage currents in logic devices, silicon-based oxides (SiON / SiO 2) have been replaced by physically thicker high-kappa transition metal oxide thin films by many manufacturers starting from the 45 nm technology node. CMOS process compatibility, integration and reliability are the key issues to address while introducing high-kappa at the front end. In this study, we analyze in-depth the reliability aspect of high-kappa dielectrics focusing on both the time-dependent-dielectric breakdown (TDDB) and the post breakdown evolution stage. Electrical characterization, physical failure analysis, statistical reliability modeling as well as atomistic simulations have all been used to achieve a comprehensive understanding of the physics of failure in HK and the associated microstructural defects and failure mechanisms. The role played by different gate materials ranging from poly-Si rarr FUSI rarr metal gate and different HK materials (HfO 2, HfSiON, HfZrO 4) is also investigated. Based on the results obtained, we emphasize the need and propose a few approaches of design for reliability (DFR) in high-kappa gate stacks.},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {conference}
}
   


   

654.Journal Article

Raghavan, N.; Pey, K. L.; Liu, W. H.; Wu, X.; Li, X. 

Unipolar Recovery of Dielectric Breakdown in Fully Silicided High-Kappa Gate Stack Devices and its Reliability Implications

In: Applied Physics Letters, vol. 96, no. 14, pp. 3, 2010, ISSN: 0003-6951.

Links | BibTeX 标签: 可靠性           


@article{RN41,
title = {Unipolar Recovery of Dielectric Breakdown in Fully Silicided High-Kappa Gate Stack Devices and its Reliability Implications},
author = {N. Raghavan and K. L. Pey and W. H. Liu and X. Wu and X. Li},
doi = {10.1063/1.3374450},
issn = {0003-6951},
year  = {2010},
date = {2010-01-01},
urldate = {2010-01-01},
journal = {Applied Physics Letters},
volume = {96},
number = {14},
pages = {3},
keywords = {可靠性},
pubstate = {published},
tppubtype = {article}
}


655.Journal Article

Wu, X.; Migas, D. B.; Li, X.; Bosman, M.; Raghavan, N.; Borisenko, V. E.; Pey, K. L.
Role of Oxygen Vacancies in HfO2-Based Gate Stack Breakdown
In: Applied Physics Letters, vol. 96, no. 17, pp. 3, 2010, ISSN: 0003-6951. 

Links | BibTeX 标签: 原位电镜可靠性           


@article{RN7,
title = {Role of Oxygen Vacancies in HfO2-Based Gate Stack Breakdown},
author = {X. Wu and D. B. Migas and X. Li and M. Bosman and N. Raghavan and V. E. Borisenko and K. L. Pey},
doi = {10.1063/1.3416912},
issn = {0003-6951},
year  = {2010},
date = {2010-01-01},
urldate = {2010-01-01},
journal = {Applied Physics Letters},
volume = {96},
number = {17},
pages = {3},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}


656.Journal Article

Wu, X.; Pey, K. L.; Zhang, G.; Bai, P.; Li, X.; Liu, W. H.; Raghavan, N.
Electrode Material Dependent Breakdown and Recovery in Advanced High-Kappa Gate Stacks
In: Applied Physics Letters, vol. 96, no. 20, pp. 3, 2010, ISSN: 0003-6951. 

Links | BibTeX 标签: 原位电镜可靠性           


@article{RN10,
title = {Electrode Material Dependent Breakdown and Recovery in Advanced High-Kappa Gate Stacks},
author = {X. Wu and K. L. Pey and G. Zhang and P. Bai and X. Li and W. H. Liu and N. Raghavan},
doi = {10.1063/1.3429682},
issn = {0003-6951},
year  = {2010},
date = {2010-01-01},
urldate = {2010-01-01},
journal = {Applied Physics Letters},
volume = {96},
number = {20},
pages = {3},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}


657.Conference

Pey, K. L.; Wu, X.; Liu, W. H.; Li, X.; Raghavan, N.; Shubhakar, K.; Bosman, M.
An Overview of Physical Analysis of Nanosize Conductive Path in Ultrathin SiON and High-Kappa Gate Dielectrics in Nanoelectronic Devices
2010, (2010 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)).

Links | BibTeX 标签: 原位电镜可靠性           


@conference{RN212,
title = {An Overview of Physical Analysis of Nanosize Conductive Path in Ultrathin SiON and High-Kappa Gate Dielectrics in Nanoelectronic Devices},
author = {K. L. Pey and X. Wu and W. H. Liu and X. Li and N. Raghavan and K. Shubhakar and M. Bosman},
doi = {10.1109/ipfa.2010.5531983},
year  = {2010},
date = {2010-01-01},
urldate = {2010-01-01},
journal = {2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010)},
pages = {12 pp.-12 pp.},
note = {2010 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {conference}
}
   


658.Journal Article

Zhou Y M, Shang L Y, Yu G, Gao K H, Zhou W Z, Lin T, Guo S L, Chu J H, Dai N, Austing D G
Transport properties of a spin-split two-dimensional electron gas in an In0.53Ga0.47As/InP quantum well structure
Journal of Applied Physics, 2009, 106: 073722

| 标签: 传感器

659.Journal Article

Zhang X D, Lin T, Meng X J, Sun J L, Chu J H, Park S, Kwon H, Hwang J, Park G
Structures and Properties of PZT(52/48) Thin Films with Different Substrate Temperature and Oxygen Percentage in Mixed Ar and O-2 Gas on LNO/Si (100) by Sputtering
Integrated Ferroelectrics, 2009, 113: 63-71.

| 标签: 传感器

660.Journal Article

Zhang X D, Lin T, Meng X J, Sun J L, Chu J H, Park S, Kwon H, Hwang J, Park G
Effect of Sputtering Working Pressure on Microstructures and Properties of PZT Thin Films
Integrated Ferroelectrics, 2009, 113: 31-40.

| 标签: 传感器

661.Journal Article

Zhan G Z, Guo F M, Li J W, Zhu Z Q, Chu J H
An equivalent circuit model of a novel photodetector
Infrared Physics & Technology, 2009, 52: 434-437.

| 标签: 传感器

662.Journal Article

Yue F Y, Chen L, Wu J, Hu Z G, Li Y W, Yang P X, Chu J H
Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra
Chinese Physics Letters, 2009, 26: 47804.

| 标签: 传感器

663.Journal Article

Yang J, Meng X J, Shen M R, Sun J L, Chu J H
Effects of Mn doping on dielectric and ferroelectric properties of (Pb, Sr)TiO3 films on (111) Pt/Ti/SiO2/Si substrates
Journal of Applied Physics, 2009, 106: 094108.

| 标签: 传感器

664.Journal Article

Yang J, Gao Y Q, Huang Z M, Meng X J, Shen M R, Yin H, Sun J L, Chu J H
Dielectric functions of ferroelectric Pb0.5Sr0.5TiO3 film determined by transmittance spectroscopy
Journal of Physics D-Applied Physics, 2009, 42: 215403.

| 标签: 传感器

665.Journal Article

Xu H S, Liu X B, Fang X R, Xie H F, Li G B, Meng X J, Sun J L, Chu J H
Domain stabilization effect of interlayer on ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin film
Journal of Applied Physics, 2009, 105: 034107.

| 标签: 传感器

666.Journal Article

Wang J Q, Liu Y, Mao H B, Zhao Q, Yu J G, Zhang Y, Zhu Z Q, Chu J H
Manipulation of spin polarization by charge polarization in GaMnN ferromagnetic resonant tunneling diode
Applied Physics Letters, 2009, 94: 172501.

| 标签: 传感器

667.Journal Article

Tang N, Shen B, Han K, He X W, Yin C M, Yang Z J, Qin Z X, Zhang G Y, Lin T, Zhou W Z, Shang L Y, Chu J H
Influence of the illumination on the subband structure and occupation in Al (x) Ga1-x N/GaN heterostructures
Applied Physics a-Materials Science & Processing, 2009, 96: 953-957.

| 标签: 传感器

668.Journal Article

Sun L, Zhou W Z, Yu G L, Shang L Y, Gao K H, Zhou Y M, Lin T, Cui L J, Zeng Y P, Chu J H
Strong Spin-Orbit Interactions in an InAlAs/InGaAs/InAlAs Two-Dimensional Electron Gas by Weak Antilocalization Analysis
Japanese Journal of Applied Physics, 2009, 48: 063004.

| 标签: 传感器

669.Journal Article

Sun L, Chu J H, Yang P-x, Yue F-y, Li Y-w, Feng C-d, Mao C-l
Influence of substitution of Nd3+ for Bi3+ on structure and piezoelectric properties of SrBi2−xNdxNb2O9 (x=0, 0.1, 0.2 and 0.4)
Transactions of Nonferrous Metals Society of China, 2009, 19: 1459-1463.

| 标签: 传感器

670.Journal Article

Sun L, Chu J H, Yang P X, Feng C D
Effects of substitutions of Nd3+ for Sr2+ on the properties of SrBi2Nb2O9 ceramics and their mechanism
Acta Physica Sinica, 2009, 58: 5790-5797.

| 标签: 传感器

671.Journal Article

Shen H, Gao Y H, Zhou P, Ma J H, Sun J L, Meng X J, Chu J H
Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared on LaNiO3/Si substrates
Journal of Applied Physics, 2009, 105: 061637.

| 标签: 传感器

672.Journal Article

Shao J, Lu X, Guo S L, Lu W, Chen L, Wei Y F, Yang J R, He L, Chu J H
Impurity levels and bandedge electronic structure in as-grown arsenic-doped HgCdTe by infrared photoreflectance spectroscopy
Physical Review B, 2009, 80: 155125.

| 标签: 传感器

673.Journal Article

Shao J, Chen L, Lu X, Lu W, He L, Guo S L, Chu J H
Realization of photoreflectance spectroscopy in very-long wave infrared of up to 20 mu m
Applied Physics Letters, 2009, 95: 041908.

| 标签: 传感器

674.Journal Article

Shang J L, Hu G J, Zhang T, Sun Y, Wu J, Chu J H, Dai N
Effect of Polyethylene Glycol Content on the Optical Properties of Ba0.9Sr0.1TiO3 Multilayers
Journal of the American Ceramic Society, 2009, 92: 539-541.

| 标签: 传感器

675.Journal Article

Shang J L, Hu G J, Zhang T, Sun Y, Wu J, Chu J H, Dai N
Construction of PbZr0.4Ti0.6O3- and Ba0.9Sr0.1TiO3-Based Optical Microcavities by Chemical Solution Deposition
Journal of the American Ceramic Society, 2009, 92: 2159-2161.

| 标签: 传感器

676.Journal Article

Qin J, Huang Z, Ge Y, Hou Y, Chu J H
Tandem demodulation lock-in amplifier based on digital signal processor for dual-modulated spectroscopy
Rev Sci Instrum, 2009, 80: 033112.

| 标签: 传感器

677.Journal Article

Miao F J, Zhang J, Xu S H, Wang L W, Chu J H, Cao Z S, Zhan P, Wang Z L
An Array of One-Dimensional Porous Silicon Photonic Crystal Reflector Islands for a Far-Infrared Image Detector
Chinese Physics Letters, 2009, 26: 044207.

| 标签: 传感器

678.Journal Article

Meng X-j, Han L, Sun J-l, Chu J H
Stable pyroelectric coefficient induced from self-polarization in sol-gel derived 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 thin films
Infrared Laser Engineering, 2009, 38: 961-965, 1019.

| 标签: 传感器

679.Journal Article

Meng X J, Wang J L, Xu H S, Sun J L, Chu J H
The effect of ac field amplitude on the relaxor behaviors in Langmuir-Blodgett terpolymer films
Journal of Applied Physics, 2009, 106: 114106.

| 标签: 传感器

680.Journal Article

Meng X J, Dkhil B, Liu P F, Wang J L, Sun J L, Chu J H
Threshold fields in the dc bias dependence of dielectric responses of relaxor ferroelectric terpolymer films
Journal of Applied Physics, 2009, 106: 104102

| 标签: 传感器

681.Journal Article

Liu Z P, Deng H M, Yang P X, Chu J H
Enhanced ferroelectric properties of Fe-doped BaTiO3 thin film deposited on LaNiO3/Si substrate by sol-gel technique
Materials Letters, 2009, 63: 2622-2624.

| 标签: 传感器

682.Journal Article

Liu P F, Wang J L, Tian L, Meng X J, Chu J H
Electric Characteristics of Langmuir-Blodgett Ferroelectric Polymers Film: High Pyroelectric Coefficient and Low Dielectric Constant
Journal of Infrared and Millimeter Waves, 2009, 28: 401.

| 标签: 传感器

683.Journal Article

Liu P F, Meng X J, Chu J H, Geneste G, Dkhil B
Effect of in-plane misfit strains on dielectric and pyroelectric response of poly (vinylidene fluoride-trifluoroethylene) ferroelectric polymer
Journal of Applied Physics, 2009, 105: 114105.

| 标签: 传感器

684.Journal Article

Liu P F, Gemeiner P, Shen H, Meng X J, Chu J H, Geiger S, Guiblin N, Dkhil B
Structural and dielectric properties of ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films with different bottom electrodes
Journal of Applied Physics, 2009, 106: 054111.

| 标签: 传感器

685.Journal Article

Liu P F, Gemeiner P, Meng X J, Chu J H, Geiger S, Dkhil B
The Debye-like relaxation mechanism in poly(vinylidene fluoride-trifluoroethylene) ferroelectric polymers
Journal of Applied Physics, 2009, 106: 104113.

| 标签: 传感器

686.Journal Article

Li Y W, Shen Y D, Hu Z G, Yue F Y, Chu J H
Effect of thickness on the dielectric property and nonlinear current-voltage behavior of CaCu3Ti4O12 thin films
Physics Letters A, 2009, 373: 2389-2392.

| 标签: 传感器

687.Journal Article

Li Y W, Hu Z G, Yue F Y, Zhou W Z, Yang P X, Chu J H
Effects of deposition temperature and post-annealing on structure and electrical properties in (La0.5Sr0.5)CoO3 films grown on silicon substrate
Applied Physics a-Materials Science & Processing, 2009, 95: 721-725.

| 标签: 传感器

688.Journal Article

Li W W, Li Y W, Hu Z G, Zhu Z Q, Chu J H
STUDY ON THE SPECTROSCOPIC ELLIPSOMETRY OF La0.5Sr0.5CoO3 FILMS PREPARED AT DIFFERENT SUBSTRATE TEMPERATURES
Journal of Infrared and Millimeter Waves, 2009, 28: 410-413.

| 标签: 传感器

689.Journal Article

Li W W, Hu Z G, Wu J D, Sun J, Zhu M, Zhu Z Q, Chu J H
Concentration Dependence of Optical Properties in Arsenic-Doped ZnO Nanocrystalline Films Grown on Silicon (100) Substrates by Pulsed Laser Deposition
Journal of Physical Chemistry C, 2009, 113: 18347-18352.

| 标签: 传感器

690.Journal Article

Kong J, Deng H M, Yang P X, Chu J H
Synthesis and properties of pure and antimony-doped tin dioxide thin films fabricated by sol-gel technique on silicon wafer
Materials Chemistry and Physics, 2009, 114: 854-859.

| 标签: 传感器

691.Journal Article

Jing C B, Xu X G, Zhang X L, Liu Z B, Chu J H
In situ synthesis and third-order nonlinear optical properties of CdS/PVP nanocomposite films
Journal of Physics D-Applied Physics, 2009, 42: 075402.

| 标签: 传感器

692.Journal Article

Jing C B, Shan H Y, Zhang C J, Zang X D, Bai W, Chu J H
Aqueous germanate solution, alternative sol-gel precursor for preparation of Mn (x) Ge1-x diluted magnetic semiconductors
Journal of Sol-Gel Science and Technology, 2009, 51: 139-145.

| 标签: 传感器

693.Journal Article

Jing C, Zhang C, Zang X, Zhou W, Bai W, Lin T, Chu J H
Fabrication and characteristics of porous germanium films
Sci Technol Adv Mater, 2009, 10: 065001.

| 标签: 传感器

694.Journal Article

Jing C, Zang X, Bai W, Chu J H, Liu A
Aqueous germanate ion solution promoted synthesis of worm-like crystallized Ge nanostructures under ambient conditions
Nanotechnology, 2009, 20: 505607.

| 标签: 传感器

695.Journal Article

Hu Z G, Li W W, Li Y W, Zhu M, Zhu Z Q, Chu J H
Electronic properties of nanocrystalline LaNiO3 and La0.5Sr0.5CoO3 conductive films grown on silicon substrates determined by infrared to ultraviolet reflectance spectra
Applied Physics Letters, 2009, 94: 221104.

| 标签: 传感器

696.Journal Article

Hu G J, Zhang T, Sun J L, Zhu D M, Chu J H, Dai N
Dielectric relaxation associated with dipolar defect complex in PbZrxTi1-xO3 multilayer
Journal of Infrared and Millimeter Waves, 2009, 28: 321.

| 标签: 传感器

697.Journal Article

Guo M, Meng X J, Yang P X, Chu J H
SYNTHESIS AND CHARACTERIZATION OF Bi2Cu0.1V0.9O5.35-delta SOLID ELECTROLYTE VIA CHEMICAL SOLUTION PROCESS
Journal of Infrared and Millimeter Waves, 2009, 28: 259-262.

| 标签: 传感器

698.Journal Article

Guo M, Deng H M, Yang P X, Chu J H
The influence of annealing temperatures on the properties of Bi2VO5.5/LaNiO3/Si thin films
Materials Letters, 2009, 63: 1535-1537.

| 标签: 传感器

699.Journal Article

Guo F M, Zhan G Z, Han J Q, Xu B, Zhou X L, Li J W, Xiong D Y, Ye Y C, Wang Y P, Wang X H, Chu J H
Dumping design of CTIA readout circuit based on a low-dimensional quantum structure photoelectric sensor
Proceedings of the SPIE - The International Society for Optical Engineering, 2009, 7383: 73834Z.

| 标签: 传感器

700.Journal Article

Gao Y Q, Huang Z M, Hou Y, Wu J, Ge Y J, Chu J H
Optical properties of Mn1.56Co0.96Ni0.48O4 films studied by spectroscopic ellipsometry
Applied Physics Letters, 2009, 94: 011106.

| 标签: 传感器

701.Journal Article

Gao K H, Zhou W Z, Zhou Y M, Yu G, Lin T, Guo S L, Chu J H, Dai N, Gu Y, Zhang Y G
Austing D G. Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well
Applied Physics Letters, 2009, 94: 152107.

| 标签: 传感器

702.Journal Article

Gao K H, Yu G, Zhou Y M, Zhou W Z, Lin T, Chu J H, Dai N
SpringThorpe A J, Austing D G. Transport properties of AlGaAs/GaAs parabolic quantum wells
Journal of Applied Physics, 2009, 105: 013712

| 标签: 传感器

703.Journal Article

Gao K H, Yu G, Zhou Y M, Zhou W Z, Lin T, Chu J H, Dai N, Austing D G, Gu Y, Zhang Y G
Experimental study of weak antilocalization effects in a two-dimensional system: Anomalous dephasing rate
Physical Review B, 2009, 79: 085310.

| 标签: 传感器

704.Journal Article

Bai W, Meng X J, Zhu X, Jing C B, Gao C, Chu J H
Shape-tuned synthesis of dispersed magnetite submicro particles with good magnetic properties
Physica E-Low-Dimensional Systems & Nanostructures, 2009, 42: 141-145.

| 标签: 传感器

705.Conference

Bai W, Meng X J, Yang J, Lin T, Zhang Q X, Ma J H, Sun J L, Chu J H
Magnetoelectric, pinning and depinning properties in Pb(Zr0.5Ti0.5)O-3/Fe3O4 composite films
Journal of Physics D-Applied Physics, 2009, 42: 145008.

| 标签: 传感器

706.Journal Article

Bai W, Meng X J, Lin T, Tian L, Jing C B, Liu W J, Ma J H, Sun J L, Chu J H
Effect of Fe-doping concentration on microstructure, electrical, and magnetic properties of Pb(Zr0.5Ti0.5)O-3 thin films prepared by chemical solution deposition
Journal of Applied Physics, 2009, 106: 124908.

| 标签: 传感器

707.Journal Article

Zhou W Z, Lin T, Shang L Y, Sun L, Gao K H, Zhou Y M, Yu G, Tang N, Han K, Shen B, Guo S L, Gui Y S, Chu J H
Weak antilocalization and beating pattern in high electron mobility AlxGa1-xN/GaN two-dimensional electron gas with strong Rashba spin-orbit coupling
Journal of Applied Physics, 2008, 104: 053703

| 标签: 传感器

708.Journal Article

Zhou W Z, Lin T, Shang L Y, Sun L, Gao K H, Zhou Y M, Yu G, Tang N, Han K, Shen B, Guo S L, Gui Y S, Chu J H
Influence of the illumination on weak antilocalization in an AlxGa1-xN/GaN heterostructure with strong spin-orbit coupling
Applied Physics Letters, 2008, 93: 262104.

| 标签: 传感器

709.Journal Article

Zhao X Y, Liu S J, Chu J H, Dai N, Hu G J
Ferroelectric and optical properties of Pb(ZrxTi1-x)O-3 bilayers
Acta Physica Sinica, 2008, 57: 5968-5972.

| 标签: 传感器

710.Journal Article

Zhang X D, Meng X J, Sun J L, Lin T, Ma J H, Chu J H, Wang N, Dho J
The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing
Journal of Materials Research, 2008, 23: 2846-2853.

| 标签: 传感器

711.Journal Article

Zhang X D, Meng X J, Sun J L, Lin T, Ma J H, Chu J H, Kwon D Y, Kim C W, Kim B G
Preparation of LaNiO3 thin films with very low room-temperature electrical resistivity by room temperature sputtering and high oxygen-pressure processing
Thin Solid Films, 2008, 516: 919-924.

| 标签: 传感器

712.Journal Article

Zhang X D, Meng X J, Sun J L, Lin T, Ma J H, Chu J H, Kwon D Y, Kim B G
Low-temperature preparation of sputter-deposited Pb(Zr0.52Ti0.48)O-3 thin films through high oxygen-pressure annealing
Journal of Crystal Growth, 2008, 310: 783-787.

| 标签: 传感器

713.Journal Article

Zhang X D, Meng X J, Sun J L, Lin T, Ma J H, Chu J H, Dho J H
Low-temperature crystallization of PbZr0.3Ti0.7O3 film induced by high-oxygen-pressure processing
Japanese Journal of Applied Physics, 2008, 47: 7523-7526.

| 标签: 传感器

714.Conference

Zhan G Z, Guo F M, Lei W, Huang J, Zhu Z Q, Chu J H
A specific architectures of CMOS readout for resonant-cavity-enhanced devices
proceedings of the Progress in Electromagnetics Research Symposium (PIERS 2008), Hangzhou, PEOPLES R CHINA, F Mar 24-28, 2008, 2008.

| 标签: 传感器

715.Journal Article

Yue F Y, Wu J, Chu J H
Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra
Applied Physics Letters, 2008, 93: 131909.

| 标签: 传感器

716.Journal Article

Yue F Y, Chu J H, Wu J, Hu Z G, Li Y W, Yang P X
Modulated photoluminescence of shallow levels in arsenic-doped Hg(1-x)Cd(x)Te (x approximate to 0.3) grown by molecular beam epitaxy
Applied Physics Letters, 2008, 92: 121916.

| 标签: 传感器

717.Journal Article

Yu P, Wang F F, Zhou D, Ge W W, Zhao X Y, Luo H S, Sun J L, Meng X J, Chu J H
Growth and pyroelectric properties of high Curie temperature relaxor-based ferroelectric Pb(In(1/2)Nb(1/2))O(3)-Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) ternary single crystal
Applied Physics Letters, 2008, 92: 252907.

| 标签: 传感器

718.Journal Article

Yu J, Chu J H
Progress and prospect for high temperature single-phased magnetic ferroelectrics
Chinese Science Bulletin, 2008, 53: 2097-2112.

| 标签: 传感器

719.Journal Article

Yu G, Dai N, Chu J H, Poole P J, Studenikin S A
Experimental study of the spin-orbit quantum interference effect in a high-mobility In(x)Ga(1-x)As/InP quantum well structure with strong spin-orbit interaction
Physical Review B, 2008, 78: 035304.

| 标签: 传感器

720.Journal Article

Yang J, Meng X J, Shen M R, Gao C, Sun J L, Chu J H
Evolution of electric field amplitude dependent scaling behaviors in ferroelectric films over a broad temperature range
Applied Physics Letters, 2008, 93: 092908.

| 标签: 传感器

721.Journal Article

Yang J, Meng X J, Shen M R, Fang L, Wang J L, Lin T, Sun J L, Chu J H
Hopping conduction and low-frequency dielectric relaxation in 5 mol % Mn doped (Pb,Sr)TiO3 films
Journal of Applied Physics, 2008, 104: 104113.

| 标签: 传感器

722.Journal Article


Xia L, Chu J H, Longxia L, Ning D, Fujia Z
Investigation of room temperature nuclear radiation CdZnTe pixel array detector
Journal of Optoelectronics·Laser, 2008, 19: 751-753.

| 标签: 传感器

723.Journal Article

Wei L, Fangmin G, Dapeng H, Ziqiang Z, Chu J H
Simulation and Optimizing for Heterostructure of InGaAs/InP Avalanche Photo-detectors
Laser and Infrared, 2008, 38: 1000-1003.

| 标签: 传感器

724.Journal Article

Wei J Z, Shen X Y, Ding G H, Huang Z M, Zhao L, Zhou Y, Chu J H
Infrared spectrums and temporal curve of Indirect moxibustion with common monkshood cake
Journal of Infrared and Millimeter Waves, 2008, 27: 247-251.

| 标签: 传感器

725.Journal Article

Wang J L, Meng X J, Yuan S Z, Yang J, Sun J L, Xu H S, Chu J H
High electric tunability of relaxor ferroelectric Langmuir-Blodgett terpolymer films
Applied Physics Letters, 2008, 93: 192905.

| 标签: 传感器

726.Journal Article

Tang N, Shen B, He X W, Han K, Tang Y Q, Yang Z J, Qin Z X, Zhang G Y, Lin T, Zhu B, Zhou W Z, Shang L Y, Chu J H
Influence of the illumination on the spin splitting of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
Physica Status Solidi C - Current Topics in Solid State Physics, 2008, 5: 2339.

| 标签: 传感器

727.Conference

Tang N, Shen B, Han K, Yang Z-J, Qin Z-X, Zhang G-Y, Lin T, Zhou W-Z, Shang L-Y, Chu J H, Huang R
Magnetotransport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures under illumination
proceedings of the 9th International Conference on Solid-State and Integrated-Circuit Technology, Beijing, PEOPLES R CHINA, F Oct 20-23, 2008, 2008. IEEE.

| 标签: 传感器

728.Journal Article

Shao J, Ma L L, Lu X, Wu J, Li Z F, Guo S L, He L, Lu W, Chu J H
Recent progress and potential impact of modulation spectroscopy for narrow-gap HgCdTe
Journal of Infrared and Millimeter Waves, 2008, 27: 1.

| 标签: 传感器

729.Journal Article

Shao J, Ma L L, Lu X, Lu W, Wu J, Zha F X, Wei Y F, Li Z F, Guo S L, Yang J R, He L, Chu J H
Evolution of infrared photoreflectance lineshape with temperature in narrow-gap HgCdTe epilayers
Applied Physics Letters, 2008, 93: 131914.

| 标签: 传感器

730.Journal Article

Shang L-Y, Yu G-L, Lin T, Zhou W-Z, Guo S-L, Dai N, Chu J H
Spin splitting in In(0).(53)Ga(0.47)As/InP heterostructures
Chinese Physics Letters, 2008, 25: 2194-2197.

| 标签: 传感器

731.Journal Article

Shang L Y, Lin T, Zhou W Z, Li D L, Gao H L, Zeng Y P, Guo S L, Yu G L, Chu J H
Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well
Acta Physica Sinica, 2008, 57: 5232-5236.

| 标签: 传感器

732.Journal Article

Shang L Y, Lin T, Zhou W Z, Guo S L, Li D L, Gao H L, Cui L J, Zeng Y P, Chu J H
Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands
Acta Physica Sinica, 2008, 57: 3818-3822.

| 标签: 传感器

733.Conference

Qin J H, Ma J H, Huang Z M, Chu J H
Voltage-controlled change of MIS reflectivity in visible and near infrared band
proceedings of the Thin Film Physics and Applications, Sixth International Conference, Shanghai, PEOPLES R CHINA, F Sep 25-28, 2007, 2008.

| 标签: 传感器

734.Conference

Qin J H, Ma J H, Huang Z M, Chu J H
Voltage-controlled change of MIS reflectivity in visible and near infrared band
proceedings of the Thin Film Physics and Applications, Sixth International Conference, Shanghai, PEOPLES R CHINA, F Sep 25-28, 2007, 2008.

| 标签: 传感器

735.Conference

Qin J H, Ma J H, Huang Z M, Chu J H
Study on a novel optical readout ferroelectric device based on MIS for uncooled infrared imaging
proceedings of the Conference on Advanced Materials and Devices for Sensing and Imaging III, Beijing, PEOPLES R CHINA, F Nov 12-14, 2007, 2008.

| 标签: 传感器

736.Conference

Qin J, Huang Z, Hou Y, Chu J H, Zhang D H
Dual-modulated and dual-light-path spectrometer for modulated reflectance measurement
proceedings of the IEEE Photonics Global, Singapore FDec 08-11, 2008, 2008.

| 标签: 传感器

737.Conference

Miao F, Zhang J, Xu S, Wang L, Chu J H, Cao Z, Zhan P, Wang Z
Fabrication of a reflective mirror within wide incidence angles for mid-infrared wavelength
proceedings of the International Workshop on Metamaterials Nanjing, PEOPLES R CHINA, F Nov 09-12, 2008, 2008. IEEE AP-MTT-EMC.

| 标签: 传感器

738.Journal Article

Meng X J, Kliem H, Lin T, Chu J H
Low-temperature dielectric properties of Langmuir-Blodgett ferroelectric polymer films
Journal of Applied Physics, 2008, 103: 034110.

| 标签: 传感器

739.Journal Article

Ma J H, Sun J L, Qin J H, Gao Y H, Lin T, Shen H, Shi F W, Meng X J, Chu J H, Liu S J, Li J
Electron injection of SrTiO(3)/Si interfacial layer
Applied Physics Letters, 2008, 93: 102903

| 标签: 传感器

740.Conference

Ma J H, Pin J H, Huang Z M, Gao Y H, Lin T, Shi F W, Sun J L, Chu J H
Highly (h00) oriented growth of SrTiO3 thin films on Si(100) substrates by RF magnetron sputtering and their optical properties
proceedings of the 6th International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 25-28, 2007, 2008.

| 标签: 传感器

741.Journal Article

Li-Yan S, Tie L, Wen-Zheng Z, Zhi-Ming H, Dong-Lin L, Hong-Ling G, Li-Jie C, Yi-Ping Z, Shao-Ling G, Chu J H
Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands
Acta Physica Sinica, 2008, 57: 2481-2485.

| 标签: 传感器

742.Conference

Liu P F, Meng X J, Sun J L, Ma J H, Chu J H
Phase diagrams and in-plane anisotropic misfit strains of (110) Ba0.6Sr0.4TiO3 thin films grown on (001) orthorhombic NdGaO3 substrate
proceedings of the 6th International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 25-28, 2007, 2008.

| 标签: 传感器

743.Journal Article

Liu A Y, Xue J Q, Meng X J, Sun J L, Huang Z M, Chu J H
Infrared optical properties of Ba(Zr0.20Ti0.80)O-3 and Ba(Zr0.30Ti0.70)O-3 thin films prepared by sol-gel method
Applied Surface Science, 2008, 254: 5660-5663.

| 标签: 传感器

744.Journal Article

Li Y W, Hu Z G, Yue F Y, Yang P X, Qian Y N, Cheng W J, Ma X M, Chu J H
Oxygen-vacancy-related dielectric relaxation in BiFeO3 films grown by pulsed laser deposition
Journal of Physics D-Applied Physics, 2008, 41: 215403.

| 标签: 传感器

745.Journal Article

Li Y W, Hu Z G, Sun J L, Meng X J, Chu J H
Preparation and properties of CaCu3Ti4O12 thin film grown on LaNiO3-coated silicon by sol-gel process
Journal of Crystal Growth, 2008, 310: 378-381.

| 标签: 传感器

746.Journal Article

Li Y W, Hu Z G, Sun J L, Meng X J, Chu J H
Effects of LaNiO3 bottom electrode on structural and dielectric properties of CaCu3Ti4O12 films fabricated by sol-gel method
Applied Physics Letters, 2008, 92: 042901.

| 标签: 传感器

747.Journal Article

Li X, Chu J H, Li L, Dai N, Sun J, Zhang f
Development of room temperature CdZnTe nuclear radiation detector
Semiconductor Technology, 2008, 33: 941-946.

| 标签: 传感器

748.Journal Article

Lei W, Guo F M, Lu W, Xiong D Y, Zhu Z Q, Chu J H
Based Simulation of High Gain and Low Breakdown Voltage InGaAs/InP Avalanche Photodiode
proceedings of the 8th International Conference on Numerical Simulation of Optoelectronic Devices Nottingham, ENGLAND, F Sep 01-04, 2008, 2008 IEEE Lasers & Electro Opt Soc.

| 标签: 传感器

749.Journal Article

Hu Z G, Li Y W, Zhu M, Zhu Z Q, Chu J H
Structure and optical properties of ferroelectric PbZr0.40Ti0.60O3 films grown on LaNiO3-coated platinized silicon determined by infrared spectroscopic ellipsometry
Journal of Physical Chemistry C, 2008, 112: 9737-9743.

| 标签: 传感器

750.Journal Article

Hu Z G, Li Y W, Zhu M, Zhu Z Q, Chu J H
Microstructural and optical investigations of sol-gel derived ferroelectric BaTiO3 nanocrystalline films determined by spectroscopic ellipsometry
Physics Letters A, 2008, 372: 4521-4526.

| 标签: 传感器

751.Journal Article

Hu Z G, Li Y W, Zhu M, Zhu Z Q, Chu J H
Composition dependence of dielectric function in ferroelectric BaCo(x)Ti(1-x)O(3) films grown on quartz substrates by transmittance spectra
Applied Physics Letters, 2008, 92: 081904

| 标签: 传感器

752.Journal Article

Hu Z G, Li Y W, Zhu M, Yue F Y, Zhu Z Q, Chu J H
Growth and ellipsometric characterizations of highly (111)-oriented Bi2Ti2O7 films on platinized silicon by metal organic decomposition method
Journal of Vacuum Science & Technology A, 2008, 26: 1287-1292.

| 标签: 传感器

753.Journal Article

Hu Z G, Li W W, Wu J D, Sun J, Shu Q W, Zhong X X, Zhu Z Q, Chu J H
Optical properties of pulsed laser deposited rutile titanium dioxide films on quartz substrates determined by Raman scattering and transmittance spectra
Applied Physics Letters, 2008, 93: 181910.

| 标签: 传感器

754.Journal Article

Hu G J, Shang J L, Zhang T, Xie J, Sun J L, Chu J H, Dai N
Ferroelectric and dielectric properties of lead zirconate titanate multilayers
Journal of Infrared and Millimeter Waves, 2008, 27: 169.

| 标签: 传感器

755.Journal Article

Hou Y, Xue J Q, Huang Z M, Li T X, Ge Y J, Chu J H
Structure-related optical properties of Bi4-xLaxTi3O12 thin films grown on Pt/Ti/SiO2/Si substrate
Thin Solid Films, 2008, 517: 901-904.

| 标签: 传感器

756.Journal Article

Hou Y, Huang Z M, Gao Y Q, Ge Y J, Wu J, Chu J H
Characterization of Mn(1.56)Co(0.96)Ni(0.48)O(4) films for infrared detection
Applied Physics Letters, 2008, 92: 202115.

| 标签: 传感器

757.Journal Article

Ge Y J, Huang Z M, Hou Y, Qin J H, Li T X, Chu J H
Low temperature growth of manganese cobalt nickelate films by chemical deposition
Thin Solid Films, 2008, 516: 5931-5934.

| 标签: 传感器

758.Journal Article

Ge Y J, Huang Z M, Hou Y, Qin J H, Li T X, Chu J H
Infrared Spectroscopic Elliposimetry and Crystallization of Manganese Cobalt Nickelate Films Prepared by Chemical Deposition at Low Temperature
Journal of Infrared and Millimeter Waves, 2008, 27: 413-416.

| 标签: 传感器

759.Journal Article

Ge Y, Huang Z, Hou Y, Li T, Chu J H
Crystallization of manganese cobalt nickelate films prepared by chemical deposition
proceedings of the 6th International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 25-28, 2007, 2008.

| 标签: 传感器

760.Journal Article

Gao Y H, Sun J L, Ma J H, Meng X J, Chu J H
Improved dielectric and electrical properties of (Ba,Sr)TiO3 thin films using Pt/LaNiO3 as the top-electrode material
Applied Physics a-Materials Science & Processing, 2008, 91: 541-544.

| 标签: 传感器

761.Conference

Gao Y H, Ma J H, Sun J L, Meng X J, Chu J H
Growth of highly (h00) oriented barium strontium titanate films on silicon substrates using conducting LaNiO3 electrode
proceedings of the Sixth International Conference on Thin Film Physics and Applications, F, 2008 SPIE.

| 标签: 传感器

762.Journal Article

Duan C G, Velev J P, Sabirianov R F, Zhu Z, Chu J H, Jaswal S S, Tsymbal E Y
Surface magnetoelectric effect in ferromagnetic metal films
Phys Rev Lett, 2008, 101: 137201.

| 标签: 传感器

763.Journal Article

Chu J H
Technical development of ferroelectric thin film uncooled infrared detector
Infrared Laser Engineering, 2008, 37: 9-13.

| 标签: 传感器

764.Journal Article

Bai W, Zhu X, Zhu Z Q, Chu J H
Synthesis of zinc oxide nanosheet thin films and their improved field emission and photoluminescence properties by annealing processing
Applied Surface Science, 2008, 254: 6483-6488.

| 标签: 传感器

765.Journal Article

Wu, X.; Uchikoshi, J.; Hirokane, T.; Yamada, R.; Takeuchi, A.; Arima, K.; Morita, M.
Characterization of Pinhole in Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Transmission Microscopy 
In: Journal of the Electrochemical Society, vol. 155, no. 11, pp. H864-H868, 2008, ISSN: 0013-4651.

Abstract | Links | BibTeX 标签: 原位电镜可靠性           

Patterned oxides buried in bonded silicon-on-insulator (SOI) wafers before thinning have been characterized by near-IR scattering topography and a microscopy combination system. Micron-scaled pinholes in patterned oxides buried in bonded SOI wafers have been observed by the scattering topography. Edges of the patterned oxides have also been observed by both scattering topography and transmission microscopy. With the combination of scattering topography and transmission and reflection microscopy, this system is effective to evaluate the visibility of patterned oxides buried in bonded SOI wafers. (C) 2008 The Electrochemical Society.

doi:10.1149/1.2971178           


@article{RN9,
title = {Characterization of Pinhole in Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Transmission Microscopy},
author = {X. Wu and J. Uchikoshi and T. Hirokane and R. Yamada and A. Takeuchi and K. Arima and M. Morita},
doi = {10.1149/1.2971178},
issn = {0013-4651},
year  = {2008},
date = {2008-01-01},
urldate = {2008-01-01},
journal = {Journal of the Electrochemical Society},
volume = {155},
number = {11},
pages = {H864-H868},
abstract = {Patterned oxides buried in bonded silicon-on-insulator (SOI) wafers before thinning have been characterized by near-IR scattering topography and a microscopy combination system. Micron-scaled pinholes in patterned oxides buried in bonded SOI wafers have been observed by the scattering topography. Edges of the patterned oxides have also been observed by both scattering topography and transmission microscopy. With the combination of scattering topography and transmission and reflection microscopy, this system is effective to evaluate the visibility of patterned oxides buried in bonded SOI wafers. (C) 2008 The Electrochemical Society.},
keywords = {原位电镜, 可靠性},
pubstate = {published},
tppubtype = {article}
}


766.Journal Article

Zhou W-Z, Lin T, Shang L-Y, Huang Z-M, Cui L-J, Li D-L, Gao H-L, Zeng Y-P, Guo S-L, Gui Y-S, Chu J H
Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems
Acta Physica Sinica, 2007, 56: 4099-4104.

| 标签: 传感器

767.Journal Article

Zhou W Z, Lin T, Shang L Y, Yu G, Huang Z M, Guo S L, Gui Y S, Dai N, Chu J H, Cui L J, Li D L, Gao H L, Zeng Y P
Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well
Solid State Communications, 2007, 143: 300-303.

| 标签: 传感器

768.Journal Article

Zhou W Z, Lin T, Shang L Y, Huang Z M, Zhu B, Cui L J, Gao H L, Li D L, Guo S L, Gui Y S, Chu J H
Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers
Acta Physica Sinica, 2007, 56: 4143-4147.

| 标签: 传感器

769.Journal Article

Zhou W Z, Huang Z M, Qiu Z J, Lin T, Shang L Y, Li D L, Gao H L, Cui L J, Zeng Y P, Guo S L, Gui Y S, Dai N, Chu J H
Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well
Solid State Communications, 2007, 142: 393-397.

| 标签: 传感器

770.Journal Article

Yue F Y, Shao J, Wei Y F, Lu X A, Wei H A, Yang J R, Chu J H
Temperature-dependent absorption spectra investigation of shallow levels in HgCdTe grown by liquid phase epitaxy
Acta Physica Sinica, 2007, 56: 2878-2881.

| 标签: 传感器

771.Journal Article

Yang J, Chu J H, Shen M R
Analysis of diffuse phase transition and relaxorlike behaviors in Pb0.5Sr0.5TiO3 films through dc electric-field dependence of dielectric response
Applied Physics Letters, 2007, 90: 242908.

| 标签: 传感器

772.Journal Article

Wang G S, Zhang Y Y, Mao C L, Dong X L, Chu J H
Composition dependence of structural and optical properties for sol-gel derived (100)-oriented Ba1-xSrxTiO3 thin films
Applied Physics Letters, 2007, 91: 061104.

| 标签: 传感器

773.Journal Article

Wan L, Li Y W, Meng X J, Sun J L, Yuan X Z, Shangguan J, Chu J H
Observation of antiphase domains in BiFeO3 thin films by X-ray diffraction
Physica B-Condensed Matter, 2007, 391: 124-129.

| 标签: 传感器

774.Journal Article

Tang N, Shen B, He X W, Han K, Yang Z J, Qin Z X, Zhang G Y, Lin T, Zhu B, Zhou W Z, Shang L Y, Chu J H
Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in AlxGa1-xN/GaN heterostructures
Physical Review B, 2007, 76: 155303.

| 标签: 传感器

775.Journal Article

Sun L, Chu J H, Feng C, Chen L
Analysis of relaxor mechanism and structural distortion for SrBi1.6Nd0.4Nb2O9 bismuth-layer-structured ceramics
Applied Physics Letters, 2007, 91: 242902.

| 标签: 传感器

776.Journal Article

Shao J, Yue F Y, Lu X, Lu W, Huang W, Li Z F, Guo S L, Chu J H
Photomodulated infrared spectroscopy by a step-scan Fourier transform infrared spectrometer (vol 89, pg 182121, 2006)
Applied Physics Letters, 2007, 90: 079902.

| 标签: 传感器

777.Journal Article

Shao J, Lu X, Lu W, Yue F Y, Huang W, Li N, Wu J, He L, Chu J H
Cutoff wavelength of Hg1-xCdxTe epilayers by infrared photoreflectance spectroscopy
Applied Physics Letters, 2007, 90: 171101.

| 标签: 传感器

778.Journal Article

Shao J, Lu W, Yue F, Lu X, Huang W, Li Z, Guo S, Chu J H
Photoreflectance spectroscopy with a step-scan Fourier-transform infrared spectrometer: technique and applications
Rev Sci Instrum, 2007, 78: 013111.

| 标签: 传感器

779.Journal Article

Shao J, Lu W, Lu X, Yue F Y, Li Z F, Guo S L, Chu J H
Modulated photoluminescence spectroscopy with a step-scan Fourier transform infrared spectrometer (vo 77, art no 063104, 2006)
Review of Scientific Instruments, 2007, 78: 029901.

| 标签: 传感器

780.Journal Article

Meng X J, Remiens D, Detalle M, Dkhil B, Sun J L, Chu J H
Critical temperatures of 70%Pb(Mg1/3Nb2/3)O-3-30%PbTiO3 thin films investigated by dielectric, ferroelectric, and structural measurements
Applied Physics Letters, 2007, 90: 132904.

| 标签: 传感器

781.Journal Article

Meng X J, Kliem H, Lin T, Chu J H
Electric field induced conversion in the nature of the phase transition from the first order to the second order for Langmuir-Boldgett polymer films
Applied Physics Letters, 2007, 91: 102903.

| 标签: 传感器

782.Journal Article

Ma J H, Meng X J, Sun J L, Xue J Q, Hu Z G, Shi F W, Lin T, Chu J H
Structural and optical properties of Bi3.25Nd0.75Ti3O12 ferroelectric thin films
Applied Physics a-Materials Science & Processing, 2007, 88: 439-442.

| 标签: 传感器

783.Journal Article

Lu X, Chu J H
Lattice thermal conductivity in a Si/Ge/Si heterostructure
Journal of Applied Physics, 2007, 101: 114323.

| 标签: 传感器

784.Journal Article

Liu A Y, Xue J Q, Hou Y, Ge Y J, Huang Z M, Chu J H
Optical characteristics of PMNT thin films in visible and mid-infrared regions
Journal of Infrared and Millimeter Waves, 2007, 26: 405-408.

| 标签: 传感器

785.Journal Article

Lin T, Sun J L, Meng X J, Ma J H, Shi F W, Zhang X D, Wang L, Chen J, Chu J H
Ferroelectric film thickness dependence of properties of infrared detector with an SiO2 aerogel thermal insulation layer
Journal of Infrared and Millimeter Waves, 2007, 26: 329.

| 标签: 传感器

786.Journal Article

Lin T, Sun J L, Meng X J, Ma J H, Shi F W, Chen J, Chu J H
The influence of dead layers on the voltage response of ferroelectric film infrared detectors
Integrated Ferroelectrics, 2007, 91: 97-102.

| 标签: 传感器

787.Journal Article

Li Y W, Xue J Q, Sun J L, Meng X J, Huang Z M, Chu J H, Ding L H, Zhang W F
Infrared optical properties of BiFeO3 thin films prepared by chemical solution deposition
Applied Physics a-Materials Science & Processing, 2007, 87: 125-128.

| 标签: 传感器

788.Journal Article

Li Y W, Hu Z G, Yue F Y, Yang G Y, Shi W Z, Meng X J, Sun J L, Chu J H
Properties of highly (100) oriented Pb(Mg1∕3,Nb2∕3)O3–PbTiO3 films on LaNiO3 bottom electrodes
Applied Physics Letters, 2007, 91: 232912.

| 标签: 传感器

789.Journal Article

Hu Z G, Li Y W, Yue F Y, Zhu Z Q, Chu J H
Temperature dependence of optical band gap in ferroelectric Bi3.25La0.75Ti3O12 films determined by ultraviolet transmittance measurements
Applied Physics Letters, 2007, 91: 221903.

| 标签: 传感器

790.Journal Article

Hu G J, Hong X K, Chu J H, Dai N
Ferroelectric and optical properties of quasiperiodic PbZr0.5Ti0.5O3 multilayers grown on quartz wafers
Applied Physics Letters, 2007, 90: 162902.

| 标签: 传感器

791.Journal Article

Hu G J, Hong X K, Chen J, Chu J H, Dai N
Formation mechanism of periodical ferroelectric multilayers with high optical reflectivity
Journal of Infrared and Millimeter Waves, 2007, 26: 89-91.

| 标签: 传感器

792.Journal Article

Hong X K, Hu G J, Shang J L, Bao J, Chu J H, Dai N
Ba0.9Sr0.1TiO3-based optical microcavities fabricated by chemical solution deposition
Applied Physics Letters, 2007, 90: 251911.

| 标签: 传感器

793.Journal Article

Hong X K, Hu G J, Chen J, Chu J H, Dai N
Structural and electric properties of sol-gel-derived Ba0.9Sr0.1TiO3 multilayers
Journal of the American Ceramic Society, 2007, 90: 1280-1282.

| 标签: 传感器

794.Journal Article

Han K, Shen B, Tang N, Tang Y Q, He X W, Qin Z X, Yang Z J, Zhang G, Lin T, Zhu B, Zhou W Z, Chu J H
Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in AlxGa1-xN/GaN heterostructures
Physics Letters A, 2007, 366: 267-270.

| 标签: 传感器

795.Journal Article

Gao Y H, Shen H, Ma J H, Xue J Q, Sun J L, Meng X J, Chu J H, Wang P N
Surface chemical composition and optical properties of nitrogen-doped Ba0.6Sr0.4TiO3 thin films
Journal of Applied Physics, 2007, 102: 064106.

| 标签: 传感器

796.Journal Article

Chu J H, Meng X J
Study on the ferroelectric thin films tor uncooled infrared detection
Ferroelectrics, 2007, 352: 260-272.

| 标签: 传感器

797.Conference

Wu, X.; Miura, K.; Nakamae, K.
Methodology for Layout-Based Diagnosis of VLSI Chips Considering Temperature Distribution Conference 
Institute of Electronics,Information and Communication Engineers (IEICE), 2007.

BibTeX 标签: 芯片设计


@conference{nokey,
title = {Methodology for Layout-Based Diagnosis of VLSI Chips Considering Temperature Distribution},
author = {X. Wu and K. Miura and K. Nakamae},
year  = {2007},
date = {2007-09-10},
urldate = {2007-09-10},
booktitle = { Institute of Electronics,Information and Communication Engineers  (IEICE)},
keywords = {芯片设计},
pubstate = {published},
tppubtype = {conference}
}


798.Journal Article

Zhu B, Gui Y S, Zhou W Z, Shang L Y, Qiu Z J, Guo S L, Zhang F J, Chu J H
Magnetoresistance oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor
Acta Physica Sinica, 2006, 55: 2955-2960.

| 标签: 传感器

799.Journal Article

Zhu B, Gui Y S, Zhou W Z, Shang L Y, Guo S L, Chu J H, Lu J, Tang N, Shen B, Zhang F J
The weak anti localization and localization phenomenon in AlGaN/GaN two-dimensional electron gas
Acta Physica Sinica, 2006, 55: 2498-2503.

| 标签: 传感器

800.Journal Article

Zhu B, Gui Y S, Qiu Z J, Zhou W Z, Yao W, Guo S L, Chu J H, Jia Z F
Beating oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor
Acta Physica Sinica, 2006, 55: 786-790.

| 标签: 传感器

801.Journal Article

Zhou W Z, Yao W, Zhu B, Qiu Z J, Guo S L, Lin T, Cui L J, Gui Y S, Chu J H
Magneto-transport characteristics of two-dimensional electron gas for Si delta-doped InAlAs/InGaAs single quantum well
Acta Physica Sinica, 2006, 55: 2044-2048.

| 标签: 传感器

802.Journal Article

Zhang X D, Meng X J, Sun J L, Wang G S, Lin T, Chu J H
Low-temperature preparation of Pb(ZrxTi1-x)O-3 thin film
Integrated Ferroelectrics, 2006, 81: 123-128.

| 标签: 传感器

803.Journal Article

Zhang X D, Meng X J, Sun J L, Wang G S, Lin T, Chu J H
Investigation of room temperature electrical resistivities of LaNiO3-delta thin films deposited by rf magnetron sputtering and high oxygen-pressure processing
Journal of Vacuum Science & Technology A, 2006, 24: 914-918.

| 标签: 传感器

804.Journal Article

Yue F-y, Shao J, Lv X, Huang W, Chu J H
Modulated FTIR photoluminescence spectra study on narrow-gap HgCdTe liquid phase epitaxial films
proceedings of the Joint 31st International Conference on Infrared and Millimeter Waves/14th International Conference on Terahertz Electronics, Shanghai, PEOPLES R CHINA, F Sep 18-22, 2006, 2006.

| 标签: 传感器

805.Journal Article

Yue F Y, Shao J, Lu X, Huang W, Chu J H, Wu J, Lin X C, He L
Anomalous temperature dependence of absorption edge in narrow-gap HgCdTe semiconductors
Applied Physics Letters, 2006, 89: 021912.

| 标签: 传感器

806.Journal Article

Xue J Q, Huang Z M, Liu A Y, Hou Y, Meng X J, Chu J H
Optical properties of 92%Pb(Mg1/3Nb2/3)O-3-8%PbTiO3 thin films prepared by chemical solution deposition
Journal of Applied Physics, 2006, 100: 104107.

| 标签: 传感器

807.Journal Article

Wu Y N, Huang Z M, Chen Y W, Chu J H
Measurement of polarization mode dispersion in fiber using wavelength scanning method
Journal of Infrared and Millimeter Waves, 2006, 25: 64-66.

| 标签: 传感器

808.Journal Article

Tang N, Shen B, Wang M J, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H
Effective mass of the two-dimensional electron gas and band nonparabolicity in AlxGa1-xN/GaN heterostructures
Applied Physics Letters, 2006, 88: 172115.

| 标签: 传感器

809.Journal Article

Tang N, Shen B, Wang M J, Yang Z J, Xu K, Zhang G Y, Gui Y S, Zhu B, Guo S L, Chu J H, Hoshino K, Arakawa Y
Influence of the magnetic field on the effective mass of the two-dimensional electron gas in AlxGa1-x/GaN heterostructures
Physica Status Solidi C - Current Topics in Solid State Physics, 2006, 3: 2246-2249.

| 标签: 传感器

810.Journal Article

Tang N, Shen B, Wang M J, Han K, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H
Beating patterns in the oscillatory magnetoresistance originated from zero-field spin splitting in AlxGa1-xN/GaN heterostructures
Applied Physics Letters, 2006, 88: 172112.

| 标签: 传感器

811.Journal Article

Tang N, Shen B, Wang M, Yang Z, Xu K, Zhang G, Gui Y, Zhu B, Guo S, Chu J H
Influence of Al composition on transport properties of two-dimensional electron gas in AlxGa1-xAs/GaN heterostructures
Chinese Journal of Semiconductors, 2006, 27: 235-238.

| 标签: 传感器

812.Journal Article

Tang N, Shen B, Han K, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Shang L Y, Guo S L, Chu J H
Origin of split peaks in the oscillatory magnetoresistance in AlxGa1-xN/GaN heterostructures
Journal of Applied Physics, 2006, 100: 073704.

| 标签: 传感器

813.Journal Article

Sun J L, Li Y W, Li T X, Lin T, Chen J, Meng X J, Chu J H
Electrical transport properties of BiFeO3 thin film
Journal of Infrared and Millimeter Waves, 2006, 25: 401-404.

| 标签: 传感器

814.Journal Article

Sun J L, Li Y W, Li T X, Lin T, Chen J, Meng X J, Chu J H
The leakage current in BiFeO3 films derived by chemical solution deposition
Ferroelectrics, 2006, 345: 83-89.

| 标签: 传感器

815.Journal Article

Shi F W, Meng X J, Wang G S, Sun J L, Lin T, Ma J H, Li Y W, Chu J H
The third-order optical nonlinearity of Bi3.25La0.75Ti3O12 ferroelectric thin film on quartz
Thin Solid Films, 2006, 496: 333-335.

| 标签: 传感器

816.Journal Article

Shao J, Yue F Y, Lu X, Lu W, Huang W, Li Z F, Guo S L, Chu J H
Photomodulated infrared spectroscopy by a step-scan Fourier transform infrared spectrometer
Applied Physics Letters, 2006, 89: 182121.

| 标签: 传感器

817.Journal Article

Shao J, Lu X, Yue F Y, Huang W, Guo S L, Chu J H
Magnetophotoluminescence study of GaxIn1-xP quantum wells with CuPt-type long-range ordering
Journal of Applied Physics, 2006, 100: 053522.

| 标签: 传感器

818.Journal Article

Shao J, Lu W, Lu X, Yue F Y, Li Z F, Guo S L, Chu J H
Modulated photoluminescence spectroscopy with a step-scan Fourier transform infrared spectrometer
Review of Scientific Instruments, 2006, 77: 063104.

| 标签: 传感器

819.Journal Article

Wang G S, Zhao Q, Meng X J, Shi F W, Sun J L, Chu J H
The Fatigue Properties of LaNiO3/PbZr0.4Ti0.6O3/LaNiO3 Heterostructures
Piezoelectrics and Acoustooptics, 2006, 28: 72-75.

| 标签: 传感器

820.Journal Article

Ma S H, Li S H, Wang W C, Wang G S, Sun J L, Meng X J, Chu J H
Pyroelectric figure of merit in alternating hemicyanine/NC Langmuir-Blodgett films incorporating barium ions
Colloids and Surfaces a-Physicochemical and Engineering Aspects, 2006, 284: 74-77.

| 标签: 传感器

821.Conference

Ma J H, Xue J Q, Meng X J, Sun J L, Lin T, Shi F W, Chu J H
Infrared optical properties of Bi4-xNdyTi3O12 thin films prepared by a chemical solution method
proceedings of the Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, Shanghai, China, F, 2006.

| 标签: 传感器

822.Journal Article

Ma J H, Huang Z M, Meng X J, Liu S J, Zhang X D, Sun J L, Xue J Q, Chu J H, Li J
Optical properties of SrTiO3 thin films deposited by radio-frequency magnetron sputtering at various substrate temperatures
Journal of Applied Physics, 2006, 99: 033515.

| 标签: 传感器

823.Journal Article

Lu X, Chu J H
Lattice thermal conductivity in a silicon nanowire with square cross section
Journal of Applied Physics, 2006, 100: 014305.

| 标签: 传感器

824.Journal Article

Lu A Y, Meng X J, Xue J Q, Sun J L, Ma J H, Wang L, Chu J H
Optical properties of Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films prepared by chemical solution deposition
Acta Physica Sinica, 2006, 55: 3128-3131.

| 标签: 传感器

825.Journal Article

Liu A Y, Meng X J, Sun J L, Xue J Q, Ma J H, Wang L, Chu J H
Study on the electrical and optical properties of Pb(Mg1/3Nb2/3) O-3-PbTiO3 thin films deposited by a chemical solution method
Journal of Crystal Growth, 2006, 290: 127-130.

| 标签: 传感器

826.Journal Article

Li S H, Ma S H, Li B, Sun J L, Wang G S, Meng X J, Chu J H, Wang W C
Enhancement of ferroelectricity in Langmuir-Blodgett multilayer films of weak-polar organic molecules
Colloids and Surfaces a-Physicochemical and Engineering Aspects, 2006, 284: 419-423.

| 标签: 传感器

827.Journal Article

Huang Z M, Xue J Q, Liu S J, Hou Y, Chu J H, Zhang D H
Bound electrical charges in BaTiO3 ferroelectric thin films: Evidence for spontaneous polarization
Physical Review B, 2006, 73: 212104.

| 标签: 传感器

828.Journal Article

Huang Z M, Xue J Q, Hou Y, Chu J H, Zhang D H
Optical magnetic response from parallel plate metamaterials
Physical Review B, 2006, 74: 193105.

| 标签: 传感器

829.Journal Article

Huang Z M, Xue J Q, Ge Y J, Qin J H, Hou Y, Chu J H, Zhang D H
Temperature dependence of BaTiO3 infrared dielectric properties
Applied Physics Letters, 2006, 88: 212902.

| 标签: 传感器

830.Journal Article

Hu G J, Hong X K, Sun J L, Chen J, Chu J H, Zhu D M, Dai N
Peculiar ferroelectric and dielectric properties of quasiperiodic PbZr0.4Ti0.6O3 multilayers
New Journal of Physics, 2006, 8: 316.

| 标签: 传感器

831.Journal Article

Hu G J, Hong X K, Liu A Y, Chen J, Chu J H, Dai N
PbZr0.4Ti0.6O3-based reflectors with tunable peak wavelengths
Journal of the American Ceramic Society, 2006, 89: 1453-1454.

| 标签: 传感器

832.Journal Article

Hong X K, Hu G J, Chen J, Chu J H, Dai N, Wu H Z
Ba0.9Sr0.1TiO3-based Bragg reflectors fabricated from one single chemical solution
Applied Physics Letters, 2006, 89: 082902.

| 标签: 传感器

833.Journal Article

Cui L J, Zeng Y P, Wang B Q, Zhu Z P, Guo S L, Chu J H
Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates
Journal of Applied Physics, 2006, 100: 033705.

| 标签: 传感器

834.Journal Article

Zheng Z W, Shen B, Qiu Z J, Gui Y S, Tang N, Liu J, Chen D J, Zhang R, Shi Y, Zheng Y D, Guo S L, Chu J H, Hoshino K, Arakawa Y
Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
Applied Physics a-Materials Science & Processing, 2005, 80: 39-42.

| 标签: 传感器

835.Journal Article

Zhao Q, Huang Z M, Hu Z G, Chu J H
A study on the thermostability of LaNiO3 films
Surface & Coatings Technology, 2005, 192: 336-340.

| 标签: 传感器

836.Journal Article

Zhang X D, Meng X J, Sun J L, Lin T, Chu J H
Low-temperature preparation of highly (100)-oriented Pb(ZrxTi1-x)O-3 thin film by high oxygen-pressure processing
Applied Physics Letters, 2005, 86: 252902.

| 标签: 传感器

837.Journal Article

Yao W, Qiu Z J, Gui Y S, Zheng Z W, Lu J, Tang N, Shen B, Chu J H
Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure
Acta Physica Sinica, 2005, 54: 2247-2251.

| 标签: 传感器

838.Journal Article

Yang P X, Meng X J, Huang Z M, Chu J H
Ferroelectric polaron in layered perovskite ferroelectric thin films
Journal of Infrared and Millimeter Waves, 2005, 24: 1-6.

| 标签: 传感器

839.Journal Article

Yang P X, Guo M, Shi M R, Meng X J, Huang Z M, Chu J H
Spectroscopic ellipsometry of SrBi2Ta2-xNbxO9 ferroelectric thin films
Journal of Applied Physics, 2005, 97: 106106.

| 标签: 传感器

840.Journal Article

Wang G S, Zhao Q, Meng X J, Chu J H, Remiens D
Preparation of highly (100)-oriented LaNiO3 nanocrystalline films by metalorganic chemical liquid deposition
Journal of Crystal Growth, 2005, 277: 450-456.

| 标签: 传感器

841.Journal Article

Sun J L, Meng X J, Ma J H, Lin T, Chen J, Dai N, Chu J H
Retention characteristics of Au/Bi3.25La0.75Ti3O12/Si metal-ferro-electric-semiconductor structure
Applied Physics a-Materials Science & Processing, 2005, 81: 389-392.

| 标签: 传感器

842.Journal Article

Shi F-w, Meng X-j, Wang G-s, Lin T, Li Y-w, Ma J-h, Sun J-l, Chu J H
Effect of Mn doping on the electrical properties of PbZr0.5Ti0.5O3 ferroelectric thin film
Journal of Functional Materials and Devices, 2005, 11: 211-214.

| 标签: 传感器

843.Journal Article

Shi F W, Meng X J, Wang G S, Lin T, Ma J H, Li Y W, Chu J H
The third-order optical nonlinearity of The pyrochlore phase 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) thin film on quartz
Physica B-Condensed Matter, 2005, 370: 277-280.

| 标签: 传感器

844.Journal Article

Ma J H, Sun J L, Meng X J, Lin T, Shi F W, Chu J H
Dielectric and interface characteristics of SrTiO3 with a MIS structure
Acta Physica Sinica, 2005, 54: 1390-1395.

| 标签: 传感器

845.Journal Article

Ma J H, Meng X J, Sun J L, Lin T, Shi F W, Wang G S, Chu J H
Effect of excess Pb on crystallinity and ferroelectnic properties of PZT(40/60) films on LaNiO3 coated Si substrates by MOD technique
Applied Surface Science, 2005, 240: 275-279.

| 标签: 传感器

846.Journal Article

Ma J H, Meng X J, Sun J L, Lin T, Shi F W, Chu J H
Optical properties of SrTiO3 thin films prepared by metalorganic decomposition
Chinese Physics, 2005, 14: 610-614.

| 标签: 传感器

847.Journal Article

Ma J H, Meng X J, Sun J L, Lin T, Shi F W, Chu J H
Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr0.4Ti0.6)O-3 thin films on LaNiO3 coated Si substrates
Materials Research Bulletin, 2005, 40: 221-228.

| 标签: 传感器

848.Journal Article

Ma J H, Meng X J, Sun J L, Hu Z G, Chu J H
Optical properties of Bi3.25La0.75Ti3O12 and Bi3.25Nd0.75Ti3O12 thin films prepared by a chemical solution method
Acta Physica Sinica, 2005, 54: 3900-3904.

| 标签: 传感器

849.Journal Article

Ma J H, Meng X J, Sun J L, Chu J H
Crystallinity and ferro electricity of MOD-derived Pb0.985La0.01(Zr0.4Ti0.6)O-3 thin films
Journal of Inorganic Materials, 2005, 20: 163-168.

| 标签: 传感器

850.Journal Article

Ma J H, Meng X J, Sun J L, Chu J H
Anisotropic ferroelectric properties of MOD-derived Bi3.25Nd0.75Ti3O12 thin films
Journal of Inorganic Materials, 2005, 20: 430-434.

| 标签: 传感器

851.Journal Article

Ma J H, Meng X J, Lin T, Liu S J, Zhang X D, Sun J L, Chu J H
Structural and electrical properties of SrTiO3 thin films as insulator of met al-ferro electric-insulator-semiconductor (MFIS) structures
Chinese Physics, 2005, 14: 2352-2359.

| 标签: 传感器

852.Journal Article

Ma J H, Meng X J, Lin T, Liu S J, Sun J L, Chu J H
Leakage current mechanisms of SrTiO3 thin films with MIS structures
Integrated Ferroelectrics, 2005, 74: 189-197.

| 标签: 传感器

853.Journal Article

Liu S J, Chu J H
Theoretical study of monolithic dielectric bolometer by thermal diffusion equation
proceedings of the Infrared Components and Their Applications, Beijing, PEOPLES R CHINA, F Nov 08-11, 2004, 2005.

| 标签: 传感器

854.Journal Article

Liu A Y, Meng X J, Xue J Q, Sun J L, Chen J, Chu J H
Electrical and optical properties of Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films prepared by chemical solution deposition
Applied Physics Letters, 2005, 87: 072903.

| 标签: 传感器

855.Journal Article

Lin T, Sun J L, Shi F W, Hu Z G, Chen J, Chu J H
The characteristic in infrared region of the TiO2 : Ti film
Infrared Physics & Technology, 2005, 46: 257-261.

| 标签: 传感器

856.Journal Article

Lin T, Meng X J, Sun J L, Ma J H, Chu J H
Effect of LaNiO3 buffer layers on the structure and electrical properties of sol-gel-derived Pb(Mg1/3Nb2/3)O3PbTiO3 thin films
Applied Physics a-Materials Science & Processing, 2005, 81: 1025-1028.

| 标签: 传感器

857.Journal Article

Li Y W, Sun J L, Chen J, Meng X J, Chu J H
Structural, ferroelectric, dielectric, and magnetic properties of BiFeO3/Pb(Zr-0.5,Ti-0.5)O-3 multilayer films derived by chemical solution deposition
Applied Physics Letters, 2005, 87: 182902.

| 标签: 传感器

858.Journal Article

Li Y W, Sun J L, Chen J, Meng X J, Chu J H
Preparation and characterization of BiFeO3 thin films grown on LaNiO3-coated SrTiO3 substrate by chemical solution deposition
Journal of Crystal Growth, 2005, 285: 595-599.

| 标签: 传感器

859.Journal Article

Huang Z M, Chu J H, Wu Y N, Hou Y, Xue J Q, Tang D Y
Static effective charges of BaTiO3: Infrared spectroscopic ellipsometry study
Physical Review B, 2005, 72: 052106.

| 标签: 传感器

860.Journal Article

Hu Z G, Shi F W, Huang Z M, Wu Y N, Wang G S, Chu J H
Spectroscopic ellipsometry investigations of PLT ferroelectric thin films with various La concentrations in the mid-infrared spectral region
Applied Physics a-Materials Science & Processing, 2005, 80: 841-846.

| 标签: 传感器

861.Journal Article

Hu Z G, Huang Z M, Chu J H
Optical characterizations of ferroelectric Bi3.25La0.75Ti3O12 thin films from NIR to UV regions using spectroscopic ellipsometry
Trends in Semiconductor Research, 2005, 111-136.

| 标签: 传感器

862.Journal Article

Hu G J, Chen J, An D L, Chu J H, Dai N
Fabrication of ferroelectric PbZr0.4Ti0.6O3 multilayers by sol-gel process
Applied Physics Letters, 2005, 86: 162905.

| 标签: 传感器

863.Journal Article

Hou Y, Huang Z M, Xue J Q, Wu Y N, Shen X M, Chu J H
Study of the ferroelectricity in Bi2Ti2O7 by infrared spectroscopic ellipsometry
Applied Physics Letters, 2005, 86: 112905.

| 标签: 传感器

864.Journal Article

Chu J H
Application of optical absorption transition effects and the development of semiconductor photo-electronic detectors
Wuli, 2005, 34: 840-847.

| 标签: 传感器

865.Journal Article

Zheng Z W, Shen B, Gui Y S, Qiu Z J, Jiang C P, Tang N, Liu J, Chen D J, Zhou H M, Zhang R, Shi Y, Zheng Y D, Guo S L, Chu J H, Hoshino K, Arakawa Y
Enhancement and anisotropy of the Landau g factor in modulation-doped Al0.22Ga0.78N/GaN heterostructures
Journal of Applied Physics, 2004, 95: 2473-2476.

| 标签: 传感器

866.Journal Article

Zheng Z W, Bo S, Gui Y S, Qiu Z J, Tang N, Jiang C P, Zhang R, Yi S, Zheng Y D, Guo S L, Chu J H
Study on the subband properties of AlxGa1-x/GaN modulation-doped heterostructures
Acta Physica Sinica, 2004, 53: 596-600.

| 标签: 传感器

867.Journal Article

Zhao Q, Huang Z, Hu Z, Zhang X, Chu J H
A Study on the Thermo-stability of LaNiO_3 Films
Piezoelectrics and Acoustooptics, 2004, 26: 221-224.

| 标签: 传感器

868.Journal Article

Zhao Q, Hu Z G, Huang Z M, Wang G S, Chu J H
Study on the composition dependence of IR spectra on La-Ni-O thin films
Journal of Infrared and Millimeter Waves, 2004, 23: 95-98.

| 标签: 传感器

869.Journal Article

Yu J, Meng X J, Sun J L, Huang Z M, Chu J H
Optical and electrical properties of highly (100)-oriented PbZr1-xTixO3 thin films on the LaNiO3 buffer layer
Journal of Applied Physics, 2004, 96: 2792-2799.

| 标签: 传感器

870.Journal Article

Wang G-s, Shi F-w, Sun J-l, Meng X-j, Dai N, Chu J H
Effect of LaNiO3 buffer layer on properties of Pb(Zr,Ti)O3 thin films
Journal of Functional Materials and Devices, 2004, 10: 294-298.

| 标签: 传感器

871.Journal Article

Wang G S, Meng X J, Sun J L, Chu J H, Remiens D
Ferroelectric properties of PbZr0.40Ti0.60O3/LaxSr1-xCoO3 heterostructures prepared by chemical solution routes
Integrated Ferroelectrics, 2004, 64: 277-288.

| 标签: 传感器

872.Journal Article

Wang G S, Hu Z G, Huang Z M, Yu J, Shi F W, Lin T, Ma J H, Zhao Q, Sun J L, Meng X J, Guo S L, Chu J H
Infrared optical properties of PbZr0.4Ti0.6O3/La0.5Sr0.5CoO3 heterostructures on platinized silicon substrate
Applied Physics a-Materials Science & Processing, 2004, 78: 119-123.

| 标签: 传感器

873.Journal Article

Shu X Z, Wu Y R, Chen X S, Chu J H
Finite difference time domain modeling of grating-coupled quantum well infrared photodetector
Journal of Infrared and Millimeter Waves, 2004, 23: 401-404.

| 标签: 传感器

874.Conference

Shi F W, Wang G S, Meng X J, Sun J L, Chu J H
Heat-treating effect on the properties of Pb1-xLaxZr0.4Ti0.6)O-3 ferroelectric thin film prepared by a modified sol-gel process
proceedings of the Fifth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F May 31-jun 02, 2004, 2004.

| 标签: 传感器

875.Journal Article

Shi F W, Hu Z G, Wang G S, Lin T, Ma J H, Huang Z M, Meng X J, Sun J L, Chu J H
Infrared optical properties of sol-gel Pb1-xLaxTiO3 ferroelectric thin films
Thin Solid Films, 2004, 458: 223-226.

| 标签: 传感器

876.Journal Article

Qiu Z J, Gui Y S, Zheng Z W, Tang N, Lu J, Shen B, Dai N, Chu J H
Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructure
Solid State Communications, 2004, 129: 187-190.

| 标签: 传感器

877.Journal Article

Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H
Spin-orbit and exchange interaction in a HgMnTe magnetic two-dimensional electron gas
Acta Physica Sinica, 2004, 53: 1977-1980.

| 标签: 传感器

878.Journal Article

Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H
Giant Rashba spin splitting in HgTe/HgCdTe quantum wells
Acta Physica Sinica, 2004, 53: 1186-1190.

| 标签: 传感器

879.Journal Article

Qiu Z J, Gui Y S, Lin T, Lu J, Tang N, Shen B, Dai N, Chu J H
Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements
Solid State Communications, 2004, 131: 37-40.

| 标签: 传感器

880.Journal Article

Qiu Z J, Gui Y S, Lin T, Dai N, Chu J H, Tang N, Lu J, Shen B
Weak localization and magnetointersubband scattering effects in an AlxGa1-xN/GaN two-dimensional electron gas
Physical Review B, 2004, 69: 125335.

| 标签: 传感器

881.Journal Article

Qiu Z J, Gui Y S, Guo S L, Dai N, Chu J H, Zhang X X, Zeng Y P
Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes
Applied Physics Letters, 2004, 84: 1961-1963.

| 标签: 传感器

882.Journal Article

Qiu Z J, Gui Y S, Cui L J, Zeng Y P, Huang Z M, Shu X Z, Dai N, Guo S L, Chu J H
Magneto - Transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well
Journal of Infrared and Millimeter Waves, 2004, 23: 329-332.

| 标签: 传感器

883.Journal Article

Meng X J, Ma J H, Sun J L, Lin T, Yu J, Wang G S, Chu J H
Effect of substitution of vanadium on the structure and electrical properties of Bi3.25La0.75Ti3O12 thin films
Applied Physics a-Materials Science & Processing, 2004, 78: 1089-1091.

| 标签: 传感器

884.Journal Article

Ma J H, Meng X J, Sun J L, Wang G S, Lin T, Shi F W, Chu J H
Silica aerogel thin films prepared at ambient pressure
Journal of Infrared and Millimeter Waves, 2004, 23: 465-468.

| 标签: 传感器

885.Journal Article

Ma J H, Meng X J, Sun J L, Lin T, Shi F W, Chu J H
Ferroelectric and optical properties of Bi3.25Nd0.75Ti3O12 thin films prepared by a chemical solution method
Journal of Physics D-Applied Physics, 2004, 37: 3160-3164.

| 标签: 传感器

886.Journal Article

Ma J H, Meng X J, Sun J L, Lin T, Chu J H
Structure and ferroelectric properties of Bi3.25La0.75Ti3O12 and Bi3'.25Nd0.75Ti3O12 thin films prepared by a MOD method
proceedings of the Fifth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F May 31-jun 02, 2004, 2004.

| 标签: 传感器

887.Journal Article

Lu J, Shen B, Tang N, Chen D J, Zhao H, Liu D W, Zhang R, Shi Y, Zheng Y D, Qiu Z J, Gui Y S, Zhu B, Yao W, Chu J H, Hoshino K, Arakawa Y
Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation
Applied Physics Letters, 2004, 85: 3125-3127.

| 标签: 传感器

888.Journal Article

Liu S H, Zeng X B, Chu J H
Thermal-sensitive BST thin film capacitors for dielectric bolometer prepared by RF magnetron sputtering
Microelectronics Journal, 2004, 35: 601-603.

| 标签: 传感器

889.Journal Article

Liu A Y, Meng X J, Sun J L, Chu J H
Study on the structure and ferroelectric properties of sol-gel derived Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films
proceedings of the Fifth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F May 31-jun 02, 2004, 2004.

| 标签: 传感器

890.Journal Article

Li Y W, Sun J L, Meng X J, Zhang W F, Chu J H
Optical properties of BaTiO3 and Mn : BaTiO3 thin films deposited on fused quartz and silicon substrates using a sol-gel method
proceedings of the Fifth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F May 31-jun 02, 2004, 2004.

| 标签: 传感器

891.Journal Article

<p

Li Y W, Sun J L, Meng X J, Chu J H, Zhang W F
Structural and optical properties of Ba(Co-x,Ti1-x)O-3 thin films fabricated by sol-gel process
Applied Physics Letters, 2004, 85: 1964-1966.

| 标签: 传感器

892.Journal Article

Li X X, Lai Z Q, Wang G S, Sun J L, Zhao Q, Chu J H
Influence of deposition power on the composition, structure and properties of PZT thin films prepared by RF sputtering
Journal of Infrared and Millimeter Waves, 2004, 23: 313-316.

| 标签: 传感器

893.Journal Article

Li S H, Mu J, Wang W J, Ma S H, Sun J L, Chu J H, Wang W C
Polarization of hemicyanine Langmuir-Blodgett films
Chinese Physics Letters, 2004, 21: 952-954.

| 标签: 传感器

894.Journal Article

Li S H, Ma S H, Li B, Sun J L, Wang G S, Meng X J, Chu J H, Wang W C
Thickness dependence of ferroelectricity in hemicyanine Langmuir-Blodgett multilayer films
Acta Physico-Chimica Sinica, 2004, 20: 1253-1257.

| 标签: 传感器

895.Journal Article

Jiang C P, Yang F H, Zheng H Z, Qiu Z J, Gui Y S, Guo S L, Chu J H, Shen B, Zheng Y D
Magnetointersubband oscillations of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
Chinese Physics Letters, 2004, 21: 915-918.

| 标签: 传感器

896.Journal Article

Hu Z G, Wang S W, Huang Z M, Wu Y N, Lu W, Chu J H
Infrared optical properties of Bi2Ti2O7 thin films prepared by chemical solution decomposition technique
Journal of Infrared and Millimeter Waves, 2004, 23: 47-50.

| 标签: 传感器

897.Journal Article

Hu Z G, Shi F W, Lin T, Huang Z M, Wang G S, Wu Y N, Chu J H
Infrared spectroscopic ellipsometry of (Pb, La)(Zr, Ti)O-3 thin films on platinized silicon
Physics Letters A, 2004, 320: 478-486.

| 标签: 传感器

898.Journal Article

Hu Z G, Lai Z Q, Huang Z M, Wang G S, Shi F W, Chu J H
Optical properties of PZT amorphous thin films prepared by RF magnetron sputtering
Journal of Infrared and Millimeter Waves, 2004, 23: 181.

| 标签: 传感器

899.Journal Article

Hu Z G, Huang Z M, Wu Y N, Zhao Q, Wang G S, Chu J H
Ellipsometric characterization of LaNiO3-x films grown on Si(111) substrates: Effects of oxygen partial pressure
Journal of Applied Physics, 2004, 95: 4036-4041.

| 标签: 传感器

900.Journal Article

Hu Z G, Huang Z M, Wu Y N, Wang G S, Meng X J, Shi F W, Chu J H
Spectroscopic-ellipsometry characterization of the interface layer of PbZr0.40Ti0.60O3/LaNiO3/Pt multilayer thin films
Journal of Vacuum Science & Technology A, 2004, 22: 1152-1157.

| 标签: 传感器

901.Journal Article

Hu Z G, Huang Z M, Wu Y N, Hu S H, Wang G S, Ma J H, Chu J H
Optical characterization of ferroelectric Bi3.25La0.75Ti3O12 thin films
European Physical Journal B, 2004, 38: 431-436.

| 标签: 传感器

902.Journal Article

Hu S H, Meng X J, Hu G J, Chu J H, Dai N, Xu L, Liu L Y, Li D X
Preparation and optical waveguide property of metal alkoxide solution-derived Pb(Zr0.5Ti0.5)O-3 thick films
Applied Physics Letters, 2004, 84: 3609-3611.

| 标签: 传感器

903.Journal Article

Hu S H, Hu G J, Meng X J, Wang G S, Sun J L, Guo S L, Chu J H, Dai N
The grain size effec of the Pb(Zr0.45Ti0.55)O-3 thin films deposited on LaNiO3-coated silicon by modified sol-gel process
Journal of Crystal Growth, 2004, 260: 109-114.

| 标签: 传感器

904.Journal Article

Hu S H, Chen J, Hu Z G, Wang G S, Meng X J, Chu J H, Dai N
The optical properties of Bi3.25La0.75Ti3O12 thin films with different thickness prepared by chemical solution deposition
Materials Research Bulletin, 2004, 39: 1223-1229.

| 标签: 传感器

905.Journal Article

Hu G J, Hu S H, Meng X J, Wang G S, Zhao Q, Sun J L, Chu J H, Dai N, Xu L, Liu L Y, Li D X
Fabrication of ferroelectric PbZrxTi1-xO3 thick films and their optical waveguide properties
Journal of Vacuum Science & Technology A, 2004, 22: 422-424.

| 标签: 传感器

906.Journal Article

Hou Y, Lin T, Huang Z M, Wang G S, Hu Z G, Chu J H, Xu X H, Wang M
Electrical and optical properties of Bi2Ti2O7 thin films prepared by metalorganic decomposition method
Applied Physics Letters, 2004, 85: 1214-1216.

| 标签: 传感器

907.Journal Article

Gui Y S, Becker C R, Dai N, Liu J, Qiu Z J, Novik E G, Schafer M, Shu X Z, Chu J H, Buhmann H, Molenkamp L W
Giant spin-orbit splitting in a HgTe quantum well
Physical Review B, 2004, 70: 115328.

| 标签: 传感器

908.Journal Article

Zheng Z W, Shen B, Jiang C P, Gui Y S, Someya T, Zhang R, Shi Y, Zheng Y D, Guo S L, Chu J H, Arakawa Y
Multisubband transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
Journal of Applied Physics, 2003, 93: 1651-1655.

| 标签: 传感器

909.Journal Article

Zheng Z W, Shen B, Jiang C P, Gui Y S, Someya T, Tang N, Zhang R, Shi Y, Zheng Y D, Guo S L, Chu J H, Arakawa Y
Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
Optical Materials, 2003, 23: 139-141.

| 标签: 传感器

910.Journal Article

Zheng Z W, Shen B, Gui Y S, Jiang C P, Tang N, Zhang R, Shi Y, Zheng Y D, Guo S L, Zheng G Z, Chu J H, Someya T, Arakawa Y
Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1-xN/GaN heterointerfaces
Applied Physics Letters, 2003, 82: 1872-1874.

| 标签: 传感器

911.Journal Article

Zhao Q, Lai Z-q, Huang Z-m, Chen J, Chu J H
Optical and electric properties of rf-magnetron sputtered LaNiO3 thin film
Journal of Functional Materials and Devices, 2003, 9: 71-74.

| 标签: 传感器

912.Journal Article

Zhao Q, Chu J H
The composition dependence of the rf-magnetron sputtered La-Ni-O films
Journal of Functional Materials, 2003, 34: 687-689.

| 标签: 传感器

913.Journal Article

Zhao Q, Chu J H
Oxygen partial pressure dependence of the properties of sputtered LaNiO3 films
Journal of Functional Materials and Devices, 2003, 9: 262-266.

| 标签: 传感器

914.Journal Article

Zhang M S, Yu J, Chu J H, Chen Q, Chen W C
Microstructures and photoluminescence of barium titanate nanocrystals synthesized by the hydrothermal process
Journal of Materials Processing Technology, 2003, 137: 78-81.

| 标签: 传感器

915.Journal Article

Yu J, Chu J H, Tang D Y
Optical and Electrical Properties of Low-Dimensional Ferroelectric Materials and Device Physics of Ferroelectric Thin Film Infrared Focal Plane Arrays
Journal of the Graduate School of the Academy of Sciences, 2003, 20: 254-259.

| 标签: 传感器

916.Journal Article

Wang G S, Meng X J, Lai Z Q, Yu J, Sun J L, Guo S L, Chu J H
Structural and optical properties of Bi3.25La0.75Ti3O12 ferroelectric thin films prepared by chemical solution methods
Applied Physics a-Materials Science & Processing, 2003, 76: 83-86.

| 标签: 传感器

917.Journal Article

Wang G S, Hu Z G, Shi F W, Meng X J, Sun J L, Zhao Q, Guo S L, Chu J H
Structureal and optical properties of PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 multilayer thin films prepared by chemical solution routes
Journal of Infrared and Millimeter Waves, 2003, 22: 23-26.

| 标签: 传感器

918.Journal Article

Wang G, Lai Z, Li X, Meng X, Sun J, Zhao Q, Lin T, Chu J H, Hu J
La-modified PbTiO3 Ferroelectric Thin Films Prepared by Sol-Gel Process
Piezoelectrics and Acoustooptics, 2003, 25: 483-485,493.

| 标签: 传感器

919.Journal Article

Wan Y B, Zhao Q, Guo X G, Chen J, Chu J H, Yoo S I
Raman and FT-IR spectra of ferroelecdtric potassium lithium niobate crystal
Journal of Infrared and Millimeter Waves, 2003, 22: 361-364.

| 标签: 传感器

920.Journal Article

Tang N, Shen B, Zheng Z W, Liu J, Chen D J, Lu J, Zhang R, Shi Y, Zheng Y D, Gui Y S, Jiang C P, Qiu Z J, Guo S L, Chu J H, Hoshino K, Someya T, Arakawa Y
Magnetoresistance oscillations induced by intersubband scattering of two-dimensional electron gas in Al0.22Ga0.78N/GaN heterostructures
Journal of Applied Physics, 2003, 94: 5420-5422.

| 标签: 传感器

921.Journal Article

Shen X Y, Ding G H, Chu J H, Huang Z M, Yao W, Zhou Y, Wei J Z, Chu L X, Zhang H M
Comparison of infrared radiation spectrum of traditional moxibustion substitute moxibustion and acupoints of human body
Journal of Infrared and Millimeter Waves, 2003, 22: 123-126.

| 标签: 传感器

922.Journal Article

Shao J, Winterhoff R, Dornen A, Baars E, Chu J H
Ordering effects on optical transitions in GaxIn1-xP/(Al0.66Ga0.34)(y)In1-yP quantum wells studied by photoluminescence and reflectivity spectroscopy
Physical Review B, 2003, 68: 165327.

| 标签: 传感器

923.Journal Article

Shao J, Dornen A, Baars E, Harle V, Scholz F, Guo S L, Chu J H
Forbidden transitions and the effective masses of electrons and holes in In1-xGaxAs/InP quantum wells with compressive strain
Journal of Applied Physics, 2003, 93: 951-956.

| 标签: 传感器

924.Journal Article

Qiu Z J, Jiang C P, Gui Y S, Shu X Z, Guo S L, Chu J H, Cui L J, Zeng Y P, Zhu Z P, Wang B Q
Electron transport properties of MM-HEMT with varied channel indium contents
Acta Physica Sinica, 2003, 52: 2879-2882.

| 标签: 传感器

925.Journal Article

Lu X, Chu J H, Shen W Z
Modification of the lattice thermal conductivity in semiconductor rectangular nanowires
Journal of Applied Physics, 2003, 93: 1219-1229.

| 标签: 传感器

926.Journal Article

Li Y W, Meng X J, Yu J, Wang G S, Sun J L, Chu J H, Zhang W F
Study on the preparation of LaNiO3 thin films using chemical solution decomposition method
Journal of Infrared and Millimeter Waves, 2003, 22: 269-272.

| 标签: 传感器

927.Journal Article

Li y, Zhang w, Meng x, Sun j, Wang g, Chu J H
The study of the Pb(Zr_(0.3),Ti_(0.7))O_3 ferroelectric thin films with the LaNiO_3 thin films as the bottom electrode
Journal of Henan University. Natural Science, 2003, 33: 23-26.

| 标签: 传感器

928.Journal Article

Lai Z, Li Xin i, Yu J, Wang G, Guo S, Chu J H
Effects on post-annealing temperature on the structure and properties of Pb(Zr_(0.52)Ti_(0.48)O_3 ferroelectric thin films prepared by rf sputtering
Journal of Nanchang University, 2003, 27: 26-28,44.

| 标签: 传感器

929.Journal Article

Hu Z G, Zhao Q, Huang Z M, Wang G S, Meng X J, Lin T, Chu J H
Investigations on the infrared spectrometric ellipsometry of PbZr0.52Ti0.48O3 thin films
Journal of Infrared and Millimeter Waves, 2003, 22: 59-62.

| 标签: 传感器

930.Journal Article

Hu Z G, Wang S W, Huang Z M, Wang G S, Zhang Z H, Lu W, Chu J H
Infrared optical properties of Bi2Ti2O7 thin films by spectroscopic ellipsometry
Thin Solid Films, 2003, 440: 190-194.

| 标签: 传感器

931.Journal Article

Hu Z G, Wang G S, Huang Z M, Meng X J, Zhao Q, Shi F W, Chu J H
Investigations on the transmission spectra of PbZr0.40Ti0.60O3 amorphous thin films
Journal of Infrared and Millimeter Waves, 2003, 22: 203-207.

| 标签: 传感器

932.Journal Article

Hu Z G, Wang G S, Huang Z M, Meng X J, Shi F W, Chu J H
Investigations of the optical properties of Ba0.9Sr0.1TiO3 ferroelectric thin films by spectroscopic ellipsometry
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 2003, 42: 1400-1404.

| 标签: 传感器

933.Journal Article

Hu Z G, Wang G S, Huang Z M, Meng X J, Shi F W, Chu J H
Investigations on optical properties of very thin Bi3.25La0.75Ti3O12 ferroelectric thin films [J]
Journal of Infrared and Millimeter Waves, 2003, 22: 256-260.

| 标签: 传感器

934.Journal Article

Hu Z G, Wang G S, Huang Z M, Meng X J, Shi F W, Chu J H
Investigations of the optical properties of Ba0.9Sr0.1TiO3 ferroelectric thin films by spectroscopic ellipsometry (vol 42, pg 1400, 2003)
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 2003, 42: 5395-5395.

| 标签: 传感器

935.Journal Article

Hu Z G, Wang G S, Huang Z M, Meng X J, Chu J H
Investigations on the infrared optical properties of BaTiO3 ferroelectric thin films by spectroscopic ellipsometry
Semiconductor Science and Technology, 2003, 18: 449-453.

| 标签: 传感器

936.Journal Article

Hu Z G, Wang G S, Huang Z M, Chu J H
Structure-related infrared optical properties of BaTiO3 thin films grown on Pt/Ti/SiO2/Si substrates
Journal of Physics and Chemistry of Solids, 2003, 64: 2445-2450.

| 标签: 传感器

937.Journal Article

Hu Z G, Wang G S, Huang Z M, Chu J H
Optical properties of Bi3.25La0.75Ti3O12 thin films using spectroscopic ellipsometry
Journal of Applied Physics, 2003, 93: 3811-3815.

| 标签: 传感器

938.Journal Article

Hu Z G, Shi F W, Huang Z M, Wu Y N, Wang G S, Chu J H
Infrared optical characterization of PLT thin films for applications in uncooled infrared detectors
International Journal of Infrared and Millimeter Waves, 2003, 24: 1939-1954.

| 标签: 传感器

939.Journal Article

Hu Z G, Shi F W, Huang Z M, Wang G S, Meng X J, Lin T, Chu J H
Investigations of concentration effects of La on the infrared optical properties of PLZT thin films
Acta Physica Sinica, 2003, 52: 1624-1629.

| 标签: 传感器

940.Journal Article

Hu Z G, Meng X J, Huang Z M, Wang G S, Zhao Q, Chu J H
Thickness dependence of infrared optical properties of LaNiO3 thin films prepared on platinized silicon substrates
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 2003, 42: 7045-7049.

| 标签: 传感器

941.Journal Article

Hu Z G, Ma J H, Huang Z M, Wu Y N, Wang G S, Chu J H
Dielectric functions of ferroelectric Bi3.25La0.75Ti3O12 thin films on Si(100) substrates
Applied Physics Letters, 2003, 83: 3686-3688.

| 标签: 传感器

942.Journal Article

Hu Z G, Huang Z M, Lai Z Q, Wang G S, Chu J H
Optical properties of amorphous PbZrxTi1-xO3 (x=0.52) thin films prepared by RF magnetron sputtering
Thin Solid Films, 2003, 437: 223-229.

| 标签: 传感器

943.Journal Article

Zhao Q, Fan Z X, Tang Z S, Meng X J, Song J L, Wang G S, Chu J H
Highly (III)-oriented PbTiO3 films prepared by rf planar magnetron sputtering and their optical properties
Surface & Coatings Technology, 2002, 160: 173-176.

| 标签: 传感器

944.Journal Article

Zhao Q, Chu J H, Fan Z
Study on Manufacturing Highly Oriented (111)PbTiO_3 Thin Film and its Optical Properties
Plezoelectrics and Acoustooptics, 2002, 24: 382-384.

| 标签: 传感器

945.Conference

Yu J, Meng X J, Sun J L, Wang G S, Chu J H
Phase transformation and Raman spectra in BaTiO3 nanocrystals
proceedings of the Symposium on Perovskite Materials held at the 2002 MRS Spring Meeting, San francisco, ca, F Apr 01-05, 2002, 2002.

| 标签: 传感器

946.Journal Article

Xing H Z, Su G, Gao S, Chu J H
Field-induced transition in the S=1 antiferromagnetic chain with single-ion anisotropy in a transverse magnetic field
Physical Review B, 2002, 66: 054419.

| 标签: 传感器

947.Journal Article

Wang G S, Yu J, Wang Q, Zhao Q, Sun J L, Meng X J, Guo S L, Chu J H
Structure and optical properties of Ba0.9Sr0.1TiO3 ferroelectric thin films prepared by chemical solution routes
Physica Status Solidi a-Applied Research, 2002, 194: 56-63.

| 标签: 传感器

948.Journal Article

Wang G S, Meng X J, Lai Z Q, Yu J, Sun J L, Cheng J G, Tang J, Guo S L, Chu J H
Structural and electrical properties of polycrystalline PbZr0.5Ti0.5O3 films deposited on La0.5Sr0.5CoO3 coated silicon by sol-gel process
Applied Physics a-Materials Science & Processing, 2002, 74: 707-710.

| 标签: 传感器

949.Journal Article

Wang G S, Lai Z Q, Yu J, Meng X J, Sun J L, Guo S L, Chu J H, Jin C Y, Li G, Lu Q H
Structural and optical properties of Ba0.9Sr0.1TiO3 thin films prepared by chemical solution routes
Journal of Infrared and Millimeter Waves, 2002, 21: 37-40.

| 标签: 传感器

950.Conference

Wang G S, Hu Z G, Huang H M, Wang X G, Lin T, Chen J, Meng X J, Chu J H, Ieee I
Infrared optical properties of lanthanum strontium cobalt thin films
proceedings of the 27th International Conference on Infrared and Millimeter Waves, San diego, ca, F Sep 22-26, 2002, 2002.

| 标签: 传感器

951.Journal Article

Wang G, Yu J, Lai Z, Meng X, Sun J, Guo S, Chu J H, Li G, Lu Q
PZT50/50 ferroelectric thin films derived by modified sol-gel process
Journal of Functional Materials, 2002, 33: 63-64.

| 标签: 传感器

952.Journal Article

Wan Y-b, Wu Y-r, Chen J, Chu J H, Guo S-l, Li J
Growth and defects of potassium lithium niobate crystals
Journal of Synthetic Crystals, 2002, 31: 5-9.

| 标签: 传感器

953.Journal Article

Tang J, Cheng J, Chu J H, Yu Q
An Cooled (Ba,Sr)TiO_3 Thin Film Infrared Sensor Array Suitable for Thermal Imaging Applications
Infrared Technology, 2002, 24: 18-21,33.

| 标签: 传感器

954.Journal Article

Sun J L, Chen J, Meng X J, Yu J, Bo L X, Guo S L, Chu J H
Evolution of Rayleigh constant in fatigued lead zirconate titanate capacitors
Applied Physics Letters, 2002, 80: 3584-3586.

| 标签: 传感器

955.Journal Article

Shao J, Dornen A, Baars E, Wang X G, Chu J H
Photoluminescence and absorption identification of Ti3+ in zinc telluride
Semiconductor Science and Technology, 2002, 17: 1213-1217.

| 标签: 传感器

956.Journal Article

Meng X J, Sun J L, Wang X G, Lin T, Ma J H, Guo S L, Chu J H
Temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors
Applied Physics Letters, 2002, 81: 4035-4037.

| 标签: 传感器

957.Journal Article

Lu X, Shen W Z, Chu J H
Size effect on the thermal conductivity of nanowires
Journal of Applied Physics, 2002, 91: 1542-1552.

| 标签: 传感器

958.Journal Article

Lu X, Chu J H
Phonon heat transport in silicon nanowires
European Physical Journal B, 2002, 26: 375-378.

| 标签: 传感器

959.Conference

Chu J H, Zhiming H
Infrared spectroscopic ellipsometry study on ferroelectric thin films and narrow gap semiconductors
Proceedings of the SPIE - The International Society for Optical Engineering, 2002, 4795: 44-51.

| 标签: 传感器

960.Journal Article

Huang Z M, Yu R, Jiang C P, Lin T, Zhang Z H, Chu J H
Influence of delta doping position on subband properties in In0.2Ga0.8As/GaAs heterostructures
Physical Review B, 2002, 65: 205312.

| 标签: 传感器

961.Journal Article

Huang Z M, Meng X J, Zhang Z H, Chu J H
Infrared optical properties of PbTiO3 ferroelectric thin films
Journal of Physics D-Applied Physics, 2002, 35: 246-248.

| 标签: 传感器

962.Journal Article

Hu Z G, Wang G S, Huang Z M, Meng X J, Chu J H
Infrared optical properties of Bi3.25La0.75Ti3O12 ferroelectric thin films using spectroscopic ellipsometry
Journal of Physics D-Applied Physics, 2002, 35: 3221-3224.

| 标签: 传感器

963.Journal Article

Hu Z G, Wang G S, Huang Z M, Chu J H
Optical properties of PbTiO3 thin films prepared by a modified sol-gel processing
Journal of Infrared and Millimeter Waves, 2002, 21: 175-179.

| 标签: 传感器

964.Journal Article

Ding G-h, Shen X-y, Chu J H, Huang Z-m, Yao W, Liu H, Wang S-z, Fei L
Research on infrared radiation spectrum of moxibustion and acupoints in human body in traditional Chinese medicine
Chinese Journal of Biomedical Engineering, 2002, 21: 356-360.

| 标签: 传感器

965.Journal Article

Ding G, Shen X, Chu J H, Huang Z, Yao W
Observation on the Characters of the Infrared radiation Spectrum of Acupoints and Four Types of Moxibustion in the Human Body
Acupuncture Research, 2002, 27: 269-273.

| 标签: 传感器

966.Journal Article

Dai N, Chang Y, Wang X G, Li B, Chu J H
Photo-electronic phenomena in narrow gap Hg1-xCdxTe
Current Applied Physics, 2002, 2: 365-371.

| 标签: 传感器

967.Journal Article

Cui L J, Zeng Y P, Wang B Q, Zhu Z P, Lin L Y, Jiang C P, Guo S L, Chu J H
Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements
Applied Physics Letters, 2002, 80: 3132-3134.

| 标签: 传感器

968.Conference

Chu J H, Huang Z M
Infrared spectroscopic ellipsometry on ferroelectric thin films and narrow gap semiconductors
proceedings of the Conference on Materials for Infrared Detectors II, Seattle, wa FJul 08-09, 2002, 2002.

| 标签: 传感器

969.Conference

Chu J H, Chang Y, Huang Z M, Gui Y S, Wang X G, Lu X, He L, Tang D Y
Optical and electronic characterization on HgCdTe materials
proceedings of the Materials for Infrared Detectors Ii, F, 2002.

| 标签: 传感器

970.Journal Article

Zheng Z W, Shen B, Jiang C P, Zhang R, Shi Y, Zheng Y D, Zheng G Z, Guo S L, Chu J H
Origin of the novel magnetoresistance oscillation of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
Chinese Physics Letters, 2001, 18: 1641-1643.

| 标签: 传感器

971.Journal Article

Yu J, Sun J L, Meng X J, Huang Z M, Chu J H, Tang D Y, Jin C Y, Li G, Li W Y, Liang Q
Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt-Ti-SiO2-Si wafer
Journal of Applied Physics, 2001, 90: 2699-2702.

| 标签: 传感器

972.Journal Article

Yu J, Huang Z M, Meng X J, Sun J L, Chu J H, Tang D Y
Infrared optical properties of LaNiO3-platinized silicon and PbZr chi Ti1-chi O3-LaNiO3-platinized silicon heterostructures
Applied Physics Letters, 2001, 78: 793-795.

| 标签: 传感器

973.Journal Article

Wang G S, Meng X J, Zheng W M, Wang X G, Yu J, Chu J H
Study of properties of urea and L-alpha-alanine didoped triglycine sulfate(UrLATGS) crystals
International Journal of Infrared and Millimeter Waves, 2001, 22: 329-334.

| 标签: 传感器

974.Journal Article

Wang G S, Meng X J, Yu J, Sun J L, Lai Z Q, Guo S L, Chu J H
Effect of hydrolysis on properties of PbZr0.50Ti0.50O3 ferroelectric thin films derived from a modified sol-gel process
Journal of Crystal Growth, 2001, 233: 269-274.

| 标签: 传感器

975.Journal Article

Wang G S, Meng X J, Sun J L, Lai Z Q, Yu J, Guo S L, Cheng J G, Tang J, Chu J H
PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 heterostructures prepared by chemical solution routes on silicon with no fatigue polarization
Applied Physics Letters, 2001, 79: 3476-3478.

| 标签: 传感器

976.Journal Article

Wang G S, Lai Z Q, Yu J, Guo S L, Chu J H, Li G, Lu Q H
Preparation and properties of lanthanum strontium cobalt films on Si(100) by metallorganic chemical liquid deposition
Journal of Crystal Growth, 2001, 233: 512-516.

| 标签: 传感器

977.Conference

Wang G S, Lai Z Q, Meng X J, Sun J L, Yu J, Guo S L, Chu J H
PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/ thin films prepared on La/sub 0.5/Sr/sub 0.5/CoO/sub 3//LaNiO/sub 3/ heterostructures for integrated ferroelectric devices
proceedings of the 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), F 22-25 Oct. 2001, 2001.

| 标签: 传感器

978.Journal Article

Wang G S, Cheng J G, Meng X J, Yu J, Lai Z Q, Tang J, Guo S L, Chu J H, Li G, Lu Q H
Properties of highly (100) oriented Ba0.9Sr0.1TiO3/LaNiO3 heterostructures prepared by chemical solution routes
Applied Physics Letters, 2001, 78: 4172-4174.

| 标签: 传感器

979.Journal Article

Wan Y B, Li J, Chu J H, Bo L X, Yu T Y, Yu B K
The study of frequency-doubling properties of ferroelectric potassium lithium niobate
Journal of Infrared and Millimeter Waves, 2001, 20: 147-150.

| 标签: 传感器

980.Journal Article

Wan Y B, Li B, Chu J H
Second harmonic generation of ferroelectric potassium lithium niobate crystals
Integrated Ferroelectrics, 2001, 35: 1827-1833.

| 标签: 传感器

981.Journal Article

Wan Y B, Chu J H, Yu T Y, Yu B K, Pan S K
Growth and characterisation of ferroelectric potassium lithium niobate crystals
Materials Science and Technology, 2001, 17: 1166-1168.

| 标签: 传感器

982.Journal Article

Wan Y B, Chu J H, Guo S L, Bo L X, Yu T Y, Yu B K
A ferroelectric frequency-doubling material-potassium lithium niobate
International Journal of Infrared and Millimeter Waves, 2001, 22: 197-205.

| 标签: 传感器

983.Conference

Wan Y, Guo Y, Yuan X, Chen J, Chu J H
Spectra properties of ferroelectric potassium lithium niobate crystal
proceedings of the 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), F 22-25 Oct. 2001, 2001.

| 标签: 传感器

984.Journal Article

Meng X J, Sun J L, Yu J, Ye H J, Guo S L, Chu J H
Preparation of highly (100)-oriented metallic LaNiO3 films on Si substrates by a modified metalorganic decomposition technique
Applied Surface Science, 2001, 171: 68-70.

| 标签: 传感器

985.Journal Article

Meng X J, Sun J L, Yu J, Wang G S, Guo S L, Chu J H
Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode
Applied Physics a-Materials Science & Processing, 2001, 73: 323-325.

| 标签: 传感器

986.Journal Article

Meng X J, Sun J L, Yu J, Bo L X, Jiang C P, Sun Q, Guo S L, Chu J H
Changes in the interface capacitance for fatigued lead-zirconate-titanate capacitors
Applied Physics Letters, 2001, 78: 2548-2550.

| 标签: 传感器

987.Journal Article

Mao W Y, Sun Q, Chu J H, Zhao J, Wang L M
Electrically active defects in HgCdTe and opto-electronic properties of focal plane array by laser beam induced current
Journal of Infrared and Millimeter Waves, 2001, 20: 259-262.

| 标签: 传感器

988.Journal Article

Ma Z X, Meng X J, Chu J H
Memory properties of metal-ferroelectric-semiconductor structure
Ferroelectrics, 2001, 253: 795-801.

| 标签: 传感器

989.Journal Article

Lu X, Gu J H, Chu J H
Thermal conductivity of metallic wires
Chinese Physics, 2001, 10: 223-228.

| 标签: 传感器

990.Journal Article

Lu X, Chu J H
Size effect on thermal conductivity of square wires
Physica Status Solidi B-Basic Research, 2001, 226: 285-292.

| 标签: 传感器

991.Journal Article

Lu X, Chu J H
Roughness effect on thermal conductivity of thin films
Physica Status Solidi B-Basic Research, 2001, 225: 35-41.

| 标签: 传感器

992.Journal Article

Liang B L, Jiang C P, Xia G Q, Fan S P, Chu J H
Investigation of long-wavelength optical-phonons in GaxIn1-xAsySb1-y quaternary mixed crystal by Raman scattering spectroscopies and FIR reflection spectra
Journal of Infrared and Millimeter Waves, 2001, 20: 315-317.

| 标签: 传感器

993.Conference

Jiang C P, Li X J, Guo S L, Sun Q, Huang Z M, Chu J H
Transport properties of InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate
proceedings of the 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), F 22-25 Oct. 2001, 2001.

| 标签: 传感器

994.Journal Article

Jiang C P, Huang Z M, Li Z F, Yu J, Guo S L, Lu W, Chu J H, Cui L J, Zeng Y P, Zhu Z P, Wang B Q
Longitudinal optic phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates
Applied Physics Letters, 2001, 79: 1375-1377.

| 标签: 传感器

995.Journal Article

Jiang C P, Huang Z M, Guo S L, Chu J H, Cui L J, Zeng Y P, Zhu Z P, Wang B Q
Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates
Applied Physics Letters, 2001, 79: 1909-1911.

| 标签: 传感器

996.Journal Article

Jiang C P, Guo S L, Huang Z M, Yu J, Gui Y S, Zheng G Z, Chu J H, Zheng Z W, Shen B, Zheng Y D
Subband electron properties of modulation-doped AlxGa1-xN/GaN heterostructures with different barrier thicknesses
Applied Physics Letters, 2001, 79: 374-376.

| 标签: 传感器

997.Journal Article

Huang Z M, Zang Z H, Jiang C P, Chu J H
Refractive index enhancement effect in Hg1-xCdxTe near the fundamental gap
Journal of Infrared and Millimeter Waves, 2001, 20: 161-164.

| 标签: 传感器

998.Journal Article

Huang Z M, Jiang C P, Zhang Z H, Lin T, Chu J H, Yu R
Subband characteristics of Si delta-doped pseudomorphic In0.2Ga0.8As/GaAs heterostructures
Journal of Applied Physics, 2001, 90: 3115-3117.

| 标签: 传感器

999.Journal Article

Huang Z M, Chu J H
Refractive index dispersion of Hg1-xCdxTe by infrared spectroscopic ellipsometry
Infrared Physics & Technology, 2001, 42: 77-80.

| 标签: 传感器