跳至正文

  • 2024

    Journal Article

    Feng G, Liu Y, Zhu Q, Feng Z, Luo S, Qin C, Chen L, Xu Y, Wang H, Zubair M, Qu K, Yang C, Hao C, Yue F, Duan C, Chu J H, Tian B
    Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization
    Nature Communications, 2024, 15(1): 9701.

    | 标签: 传感器

    Journal Article

    Zha Z, Liu S, Hou G; Zhu Y; Yu S; Zhang Q, Jing C, Chu J H
    Ultrafast Response/Recovery Acetone Gas UV Absorption Sensor Based on Ag/PEEK Hollow Fiber
    Sensors Journal, vol. 24, no. 21, pp. 34561-34568

    | 标签: 传感器

    Journal Article

    Peng C, Huang H, Ma Z, Chen F, Yan G, Li J, Li W, Li X, Chu J H, Zhang J
    High-Mobility Thin-Film Transistors Based on InZnGeO Channel Layer
    IEEE Transactions on Electron Devices, vol. 71, no. 11, pp. 6725-6730, Nov. 2024.

    | 标签: 传感器

    Journal Article

    Sun C, Xiong S, Jiang S, Wu H, Chen J, Li D, Ma Z, Wang X, Yao Y, Chu J H, Bao Q
    Bimolecular Passivation-Dipole Bridge for Highly Efficient Inverted Perovskite Solar Cells with Low Nonradiative Recombination Loss
    Small 2024, 2408593.

    | 标签: 传感器

    Conference

    Wang Q, Gu W, Bi H, et al
    A Spike-Sorting-Assisted Compressed Sensing Processor for High-Density Neural Interfaces
    2023 15th International Conference on ASIC (ASICON). IEEE, 2023: 1-4.

    | 标签: 芯片设计

    Journal Article

    Hailong Tang, Wenxian Gu, Yifan Song, Hengchang Bi, Xing Wu, Liangjian Lyu*
    A Biphasic Neural Stimulator with Adaptive Pulse-Width Modulation Charge Balancer
    ICSICT 2024

    | 标签: 芯片设计

    Journal Article

    Jialu Huang, Jingming Zhou, Zuoyuan Dong, Runsheng Wang*, Junhao Chu*, Xing Wu*
    In Situ Localization Techniques of Defects in Advanced Semiconductor Devices from Macro-scale to Atomistic-scale
    ICSICT 2024

    | 标签: 可靠性

    Journal Article

    Zhaofeng Huang, Zepeng Huang, Hengchang Bi, Xing Wu, Liangjian Lyu*

    A PPG Analog Front-End With PVT-Insensitive High-Pass Frequency
    ICSICT 2024

    | 标签: 芯片设计

    Journal Article

    Wu S, Deng J, Wang X, Zhou J, Jiao H, Zhao Q, Lin T, Shen H, Meng X, Chen Y, Chu J H, Wang J
    Polarization photodetectors with configurable polarity transition enabled by programmable ferroelectric-doping patterns
    Nature Communications, 2024, 15(1): 8743.

    | 标签: 传感器

    Journal Article

    Zhang C, Jiang R, Zheng Y, Li Y, Cai Z, Ma C, Cheng Y, Chu J H, Tao J
    Mechanism of Defect Passivation in Sb2Se3 Solar Cells via Buried Selenium Seed Layer
    Adv. Energy Mater. 2024, 2403352.

    | 标签: 传感器

    Journal Article

    Liu S, Hou G, Zha Z, Yu S, Ding J, Liu S, Jing C, Chu J H
    Robust flexible hollow racetrack-shaped terahertz waveguide with single-polarization single-mode and low-loss by plasma aided hot-pressing method
    Infrared Physics & Technology, 2024, 141: 105513

    | 标签: 传感器

    Journal Article

    Ma Y, Shan L, Ying Y, Shen L, Fu Y, Fei L, Lei Y, Yue N, Zhang, W, Zhang H, Huang H, Yao K, Chu J H
    Day-Night imaging without Infrared Cutfilter removal based on metal-gradient perovskite single crystal photodetector
    Nature Communications, 2024, 15(1): 7516.

    | 标签: 传感器

    Journal Article

    Ge R, Liu B, Sui F, Zheng Y, Yu Y, Wang K, Qi R, Huang R, Yue F, Chu J H, Duan C
    In Situ Formation of SnSe2/SnSe Vertical Heterostructures toward Polarization Selectable Band Alignments
    Small, 2404965.

    | 标签: 传感器

    Journal Article

    Zhang S, Jiao H, Chen Y, Yin R, Huang X, Zhao Q, Tan C, Huang S, Yan H, Lin T, Shen H, Ge J, Meng X, Hu W, Dai N, Wang X, Chu J H, Wang J
    Multi-dimensional optical information acquisition based on a misaligned unipolar barrier photodetector
    Nature Communications, 2024, 15(1): 7071.

    | 标签: 传感器

    Journal Article

    Tai X, Zhao Q, Chen Y, Jiao H, Wu S, Zhou D, Huang X, Xiong K, Lin T, Meng X, Wang X, Shen H, Chu J H, Wang J
    Wafer-scale Te thin film with high hole mobility and piezoelectric coefficients
    Applied Physics Letters, 2024, 125(6).

    | 标签: 传感器

    Journal Article

    Li G, Chen J, Hou G, Yu C, Zhang X, Han D, Jing C, Chu J H
    NH3 gas sensing and NH3-induced anti-counterfeiting based on nontoxic ternary copper halide
    Sensors and Actuators B: Chemical, 2024: 136544.

    | 标签: 传感器

    Journal Article

    Cheng T, Meng Y, Luo M, Xian J, Luo W, Wang W, Yue F, Ho J C, Yu C, Chu J H
    Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures
    Small, 2024, 2403129.

    | 标签: 传感器

    Journal Article

    Zhao C, Guo J, Tao J, Chu J H, Chen S, Xing G
    Pulse-doubling perovskite nanowire lasers enabled by phonon-assisted multistep energy funneling
    Light: Science Applications, 2024, 13: 170.

    | 标签: 传感器

    Journal Article

    Huo L, Wang L, Li S, Xu X, Zhu L, Li Y, Shang L, Jiang K, Chu J H, Hu Z
    Highly flexible and temperature-tolerant phase change devices for dual-band camouflage
    Applied Physics Reviews, 2024, 11:

    | 标签: 传感器

    Journal Article

    Chen H, Hu C, Chen L, Chen L, Jiang K, Zhu L, Shang L, Li Y, Chu J H, Gong S
    Flexoelectric effects in a bent α-In 2 Se 3 ferroelectric monolayer
    Physical Review B, 2024, 110: 014102.

    | 标签: 传感器

    Journal Article

    Xiong S, Tian F, Wang F, Cao A, Chen Z, Jiang S, Li D, Xu B, Wu H, Zhang Y, Qiao H, Ma Z, Tang J, Zhu H, Yao Y, Liu X, Zhang L, Sun Z, Fahlman M, Chu J H, Gao F, Bao Q
    Reducing nonradiative recombination for highly efficient inverted perovskite solar cells via a synergistic bimolecular interface
    Nature communications, 2024, 15: 5607.

    | 标签: 传感器

    Journal Article

    Weng G, Su Z, Ye S, Sun X, Cao F, Wang C, Jiang D, Hu X, Tao J, Akiyama H, Chu J H, Chen S
    Continuous-wave quasi-single-mode random lasing in CH3NH3PbBr3 perovskite films on patterned sapphire substrates
    Optics Letters, 2024, 49: 3713-3716.

    | 标签: 传感器

    Journal Article

    Yang X, Liu Y, Yang S, Wu Y, Lei Y, Yang Y, Liu A, Chu J H, Li W
    High‐Performance Tin‐Halide Perovskite Transistors Enabled by Multiple A‐Cation Engineering
    Advanced Functional Materials, 2024, 2403917.

    | 标签: 传感器

    Journal Article

    Wang H, Meng J, Lin J, Xu B, Ma H, Kan Y, Chen R, Huang L, Chen Y, Yue F, Duan C, Chu J H, Sun L
    Origin of the light-induced spin currents in heavy metal/magnetic insulator bilayers
    Nature communications, 2024, 15: 4362.

    | 标签: 传感器

    Journal Article

    Guan Z, Zheng Y Z, Tong W Y, Zhong N, Cheng Y, Xiang P H, Huang R, Chen B B, Wei Z M, Chu J H
    Two‐dimensional Janus Polarization Functioned by Mechanical Force
    Advanced Materials, 2024, 2403929.

    | 标签: 传感器

    Journal Article

    Sui F, Li H, Qi R, Jin M, Lv Z, Wu M, Liu X, Zheng Y, Liu B, Ge R, Wu Y-N, Huang R, Yue F, Chu J H, Duan C
    Atomic-level polarization reversal in sliding ferroelectric semiconductors
    Nature communications, 2024, 15: 3799.

    | 标签: 传感器

    Journal Article

    Huang Q, Wang Y, Hu X, Yang P, Zhou W, Weng G, Akiyama H, Chu J H, Chen S
    Effects of localized tensile stress on GaAs solar cells revealed by absolute electroluminescence imaging and distributed circuit modeling
    Solar Energy, 2024, 274: 112541.

    | 标签: 传感器

    Journal Article

    Cao F, Su Z, Wang C, Chen Y, Weng G, Wang C, Hu X, Akiyama H, Chu J H, Chen S
    Carrier tunneling and transport in coupled quantum wells: Modeling and experimental verification
    Applied Physics Letters, 2024, 124:

    | 标签: 传感器

    Journal Article

    Zang L, Zhao C, Hu X, Tao J, Chen S, Chu J H
    Emerging Trends in Electron Transport Layer Development for Stable and Efficient Perovskite Solar Cells
    Small, 2024, 2400807.

    | 标签: 传感器

    Journal Article

    Zheng S, Qin D, Wang R, Pan Y, Weng G, Hu X, Chu J H, Akiyama H, Chen S
    Regulating the crystal orientation of vapor-transport-deposited GeSe thin films by a post-annealing treatment
    Applied Optics, 2024, 63: 2752-2758.

    | 标签: 传感器

    Journal Article

    Li D, Liu H, Chen L, Shen Y, Feng G, Hao S, Yang Z, Zhu Q, Qu K, Tian B, Chu J H, duan C
    Effects of electrodes on antiferroelectricity and fatigue endurance of Hf0. 2Zr0. 8O2 thin films
    Applied Physics Letters, 2024, 124.

    | 标签: 传感器

    Journal Article

    Cao H, Hu T, Zhang J, Zhao D, Chen Y, Wang X, Yang J, Zhang Y, Tang X, Bai W, Shen H, Wang J, Chu J H
    Electrically Tunable Multiple‐Effects Synergistic and Boosted Photoelectric Performance in Te/WSe2 Mixed‐Dimensional Heterojunction Phototransistors
    Advanced science, 2024, 2400018.

    | 标签: 传感器

    Journal Article

    Chen L, Yu B, Shen Y, Liu Y, Wang H, Feng G, Zhu Q, Luo W, Liu J, Wan J, Zhao Q, Tian B, Chu J, Duan C
    Room-temperature ferroelectricity in magnetically ordered CoH2SeO4 flakes
    Science China Materials, 2024, 67: 1654-1660.

    | 标签: 传感器

    Journal Article

    Kan Y, Liu J, Chen R, Liu Y, Wang H, Long M, Tian B, Chu J H, Chen Y, Sun L
    Enhanced ferroelectric photovoltaic performance of Bi2FeCrO6 thin films for neuromorphic computing applications
    Applied Physics Letters, 2024, 124.

    | 标签: 传感器

    Journal Article

    Wu W, Shi Z, Ozerov M, Du Y, Wang Y, Ni X-S, Meng X, Jiang X, Wang G, Hao C, Wang X, Zhang P, Pan C, Sun Z, Yang R, Xu Y, Hou Y, Yan Z, Zhang C, Lu H, Chu J H, Yuan X
    The discovery of three-dimensional Van Hove singularity
    Nature communications, 2024, 15: 2313.

    | 标签: 传感器

    Journal Article

    Wang Z, Liu L, Zhong Z, Li X, Chen Y, Zhang J, Shi W, Zhang X, Wang J, Chu J H
    Regulating the bipolar response of InAs nanowire photodetector and waveguide integration
    Applied Physics Letters, 2024, 124.

    | 标签: 传感器

    Journal Article

    Xu X, Wang L, Li S, Cui A, Deng M, Hou Z, Jiang K, Zhu L, Shang L, Chu J H
    Nanoelectrical monitoring the nonvolatile behavior of VO2 under multi-field stimulate by conductive atomic force microscopy
    Materials Letters, 2024, 363: 136236.

    | 标签: 传感器

    Journal Article

    Chen J, Xu B, Ma H, Tong H, Zou L, Yang P, Chu J H, Sun L, Chen Y
    Enhanced the performance of CZTSSe solar cells by optimized i: ZnO window layer
    Materials Science in Semiconductor Processing, 2024, 171: 107993.

    | 标签: 传感器

    Journal Article

    Li W, Gao C, Li X, Yang J, Zhang J, Chu J H
    High bias stability of Hf-doping-modulated indium oxide thin-film transistors
    Microelectronic Engineering, 2024, 286: 112142.

    | 标签: 传感器

    Journal Article

    Qin J, Jiang R, Luo M, Cheng T, Meng Y, Zu Y, Zhang J, Ho J C, Yu C, Chu J H
    High performance few-layered h-BN-based MIS blocks by Fowler-Nordheim tunneling for infrared photodetection
    Infrared Physics Technology, 2024, 137: 105105.

    | 标签: 传感器

    Journal Article

    Li E, Wang X, Yu X, Yu R, Li W, Guo T, Chu J H, Chen H
    Multi‐Factor Modulated Organic Bulk Heterojunction Synaptic Transistor Enabled by Ligand Engineering for Centrosymmetric In‐Sensor Computing
    Advanced Functional Materials, 2024, 2314980.

    | 标签: 传感器

    Journal Article

    Liu S, Wang J, Wen S, Bi F, Zhu Q, Yang C, Yang C, Chu J H, Bao X
    Efficient Dual Mechanisms Boost the Efficiency of Ternary Solar Cells with Two Compatible Polymer Donors to Exceed 19%
    Advanced Materials, 2024, 2312959.

    | 标签: 传感器

    Journal Article

    Liu S, Wang J, Wen S, Bi F, Zhu Q, Yang C, Yang C, Chu J H, Bao X
    Efficient Dual Mechanisms Boost the Efficiency of Ternary Solar Cells with Two Compatible Polymer Donors to Exceed 19%
    Advanced Materials, 2024, 2312959.

    | 标签: 传感器

    Journal Article

    Li G, Ye H, Huang J, Cui H, Xia N, Gao Y, Huang Z, Chu J H, Andreev Y
    Absorption coefficient and phase matching angle of KTiOAsO4 at low temperatures in terahertz range for high efficiency terahertz generation
    Infrared Physics Technology, 2024, 138: 105238.

    | 标签: 传感器

    Journal Article

    Xiong K, Huang X, Zhou Y, Xiao Y, Liao L, Yan H, Lin T, Shen H, Chen P, Wang L, Bai X, Meng X, Wang X, Chu J H, Wang J
    Epitaxial Hf0. 5Zr0. 5O2 films: A temperature dependence study
    Applied Physics Letters, 2024, 124.

    | 标签: 传感器

    Journal Article

    Hou Z, Chen Y, Wang J, Chu J H
    A Novel Eye Hole Method for the Crosstalk Test of Small Element Infrared Focal Plane Arrays
    Photonics, F, 2024. MDPI.

    | 标签: 传感器

    Journal Article

    Zeng J, Feng G, Wu G, Liu J, Zhao Q, Wang H, Wu S, Wang X, Chen Y, Han S, Tian B, Duan C, Lin T, Ge J, Shen H, Meng X, Chu J H, Wang J
    Multisensory ferroelectric semiconductor synapse for neuromorphic computing
    Advanced Functional Materials, 2024, 34: 2313010.

    | 标签: 传感器

    Journal Article

    Huang X, Qin Y, Guo T, Liu J, Hu Z, Shang J, Li H, Deng G, Wu S, Chen Y, Lin T, Shen H, Ge J, Meng X, Wang X, Chu J H, Wang J
    Long‐Range Hot‐Carrier Transport in Topologically Connected HgTe Quantum Dots
    Advanced science, 2024, 11: 2307396.

    | 标签: 传感器

    Journal Article

    Feng G, Zhu Q, Liu X, Chen L, Zhao X, Liu J, Xiong S, Shan K, Yang Z, Bao Q, Yue F, Peng H, Huang R, Tang X, Jiang J, Tang W, Guo X, Wang J, Jiang A, Dkhil B, Tian B, Chu J H, Duan C
    A ferroelectric fin diode for robust non-volatile memory
    Nature communications, 2024, 15: 513.

    | 标签: 传感器

    Journal Article

    Chen J, Xu B, Ma H, Qi R, Bai W, Yue F, Yang P, Chen Y, Chu J H, Sun L
    Element Diffusion Induced Carrier Transport Enhancement in High‐Performance CZTSSe Self‐Powered Photodetector
    Small, 2024, 2307347.

    | 标签: 传感器

    Journal Article

    Huang C, Liu X, Wang Y, Lin J, Wang C, Lin X, Ma G, Huang Z, Chu J H
    Improvement of Interfacial Electron Extraction Rate by Suppressing Auger Recombination in an Indium-Doped Mixed Cationic Perovskite Heterostructure
    SSRN.

    | 标签: 传感器

    Journal Article

    Wang J, Li Y, Han C, Chen L, Bi F, Hu Z, Yang C, Bao X, Chu J H
    All-polymer solar cells with 19% efficiency via introducing pincer-shaped non-covalent bond interactions
    Energy Environmental Science, 2024.

    | 标签: 传感器

    Journal Article

    Li G, Chen J, Hou G, Yu C, Zhang X, Han D, Jing C, Chu J H
    Nh3 Gas Sensing and Nh3-Induced Anti-Counterfeiting Based on Nontoxic Ternary Copper Halide
    Available at SSRN 4806126.

    | 标签: 传感器

    Journal Article

    Wang G, Shen Y, Lu W, Tian B, Zhang J, Chu J H
    Electrical and Optical Dielectric Constants of Β-Phase P (Vdf-Trfe) Ferroelectric Films
    Available at SSRN 4801361.

    | 标签: 传感器

    Journal Article

    Zang X, Xiong S, Jiang S, Li D, Wu H, Ren H, Cao A, Li B, Ma Z, Chen J, Ding L, Tang J, Sun Z, Chu J H, Bao Q
    Passivating Dipole Layer Bridged 3D/2D Perovskite Heterojunction for Highly Efficient and Stable p‐i‐n Solar Cells
    Advanced Materials, 2024, 36: 2309991.

    | 标签: 传感器

    Journal Article

    Luo Z, Shen J, Ran X, Huang Z, Huang Z, Wang C, Cai C, Lyv L, Lin X, Sun L, Chu J H, Bi H, Wu X
    Highly Sensitive and Linear Vibration‐Based Flexible Modulus Sensing System for Human Modulus Monitoring and Disease Prevention
    Advanced Sensor Research, 2024, 3: 2300148.

    | 标签: 传感器

    Journal Article

    Lee M-P, Gao C, Tsai M-Y, Lin C-Y, Yang F-S, Sung H-Y, Zhang C, Li W, Li J, Zhang J, Watanabe K, Taniguchi T, Ueno K, Tsukagoshi K, Ho C-H, Chu J H, Chiu P-W, Li M, Wu W-W, Lin Y-F
    Silicon–van der Waals heterointegration for CMOS-compatible logic-in-memory design
    Science Advances, 2023, 9: eadk1597.

    | 标签: 传感器

    Journal Article

    Yu S, Liu S, Zhu Y, Hou G, Zha Z, Zhao Q, Liu S, Jing C, Chu J H
    Fabrication of PEEK Ag/AgI mid-infrared hollow fiber and transmission reliability study for CO2 laser radiation
    Infrared Physics Technology, 2024, 136: 105082.

    | 标签: 传感器

    Journal Article

    Zhu Y, Li G, Liu S, Yu S, Hou G, Zha Z, Zhang Q, Liu S, Jing C, Chu J H
    Hollow waveguide CO2 laser sensing system for rapid detection of trace sulfur hexafluoride (SF6) gas
    Infrared Physics Technology, 2024, 136: 105045.

    | 标签: 传感器

    Journal Article

    Zhang C, Guo Y, Lin F, Shi W, Tao J, Chu J H
    Two-stage annealing-induced secondary grain growth for enhanced efficiency in CdTe solar cells on flexible polyimide foils
    Ceramics International, 2024, 50: 6365-6373.

    | 标签: 传感器

    Journal Article

    Chao Chen, Zhe Yu*, Ying Tian, Fenglong Li, Zhengyang Kong, Xu Ran, Xing Wu, Kyung Jin Lee, Do Hwan Kim, Jung-Yong Lee, Jin Zhu*, Wu Bin Ying*
    Transmembrane Inspired Mechano-Responsive Elastomers with Synergized Traction-Assisted Healing and Dual-Channel Sensing
    Advanced Functional Materials.

    Links | 标签: 传感器仿生




    Conference

    Lvjin Wang, Cong Wang, Linwei Zhou, Xieyu Zhou, Yuhao Pan, Xing Wu and Wei Ji
    Optimal parameter-space for stabilizing the ferroelectric phase of Hf0.5Zr0.5O2 thin-films under strain and electric fields
    Chinese Physical Society.

    Links




    Conference

    Heyu Ren, Liangjian Lyu, Binbin Chen, C.-J. Richard Shi
    (Best Student Paper Candidate) A -104dBm-SensitivityReceiver with Shared Wireless L0 and Envelope-Tracking MixerAchieving -46dB SIR
    CICC


    Journal

    Jialu Huang, Xu Ran, Litao Sun, Hengchang Bi & Xing Wu
    Recent advances in membrane technologies applied in oil–water separation
    Discover Nano

    Conference

    Xu Ran, Yuhan Sun, Xing Wu*, Hengchang Bi*
    Enhancing the Thermal Conductivity of Graphene-based Thermal Interface Materials by Polyimide Fiber Intercalation
    IPFA 2024/

    | 标签: 石墨烯

    Conference

    Junhao Shen, Pengyang Han, Shaohua Zuo, Fuwen Shi, Canguan Gao, Hengchang Bi, Xing Wu*
    Study on the anti-crack propagation behavior of submicron pore-enriched elastomer composites
    IPFA 2024/


    Conference

    Yu Zhe, Yiwen Luo, Junhao Shen, Xin Gao, Jie Shang* and Xing Wu*,
    A printable metallic ink containing biphasic alloys for highly-reliable stretchable circuit
    Martina Bay Convention Center, Singapore, IPFA 2024.

    | 标签: 可靠性打印


    Conference

    Shiyi Zhang, Qing Zhang, Xing Wu, Yan Wang, Chaolun Wang,
    Denoising of Transmission Electron Microscopy Images for Atomic Defect Identification
    IPFA,2024/

    | 标签: 原位电镜 可靠性

    Conference

    Lan Li, Ran Bi, Zuoyuan Dong, Changqing Ye, Chaolun Wang, Ming Li, Xing Wu, Xiaomei Li
    Strain mapping approach of Si/SiGe heterostructure with geometrical phase technique IEEE IRPS, 2024, Forthcoming.

    | 标签: 原位电镜可靠性


    Journal Article

    Lan Li, Ran Bi, Zuoyuan Dong, Changqing Ye, Jing Xie, Chaolun Wang, Xiaomei Li, Kin Leong Pey, Ming Li, Xing Wu
    Atomic-scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy Electron, 2024

    | 标签: 原位电镜可靠性


  • 2023

    Journal Article

    Qin D, Pan X, Wang R, Pan Y, Wang Y, Zhang J, Ding X, Chen Y, Zheng S, Ye S, Pan Y, Weng G, Hu X, Tao J, Zhu Z, Chu J H, Akiyama H, Chen S
    Temperature sensitivity of adjustable band gaps of Sb2 (S, Se) 3 solar cells via vapor transport deposition
    Solar Energy Materials Solar Cells, 2023, 263: 112582.

    | 标签: 传感器

    Journal Article

    Cao Z, Li Y, Shang L, Jiang K, Zhang J, Zhu L, Hu Z, Chu J H
    Studies on the nonlinear dielectric response in ferroelectric–dielectric composite system
    Applied Physics Letters, 2023, 123:

    | 标签: 传感器

    Journal Article

    Yan H, Zhao Q, Chen Y, Wu S, Li G, Da X, Jiao H, Tai X, Xiao Y, Yan S, Tang M, Lin T, Shen H, Meng X, Wang X, Chu J H, Wang J
    MoTe2/SnSe2 Tunneling Diode Regulated by Giant Ferroelectric Field
    IEEE Transactions on Electron Devices, 2023

    | 标签: 传感器

    Journal Article

    Duan C-G, Hong J, Sui F, Wang K, Han X, Zheng Y, Tong W-y, Deng X, Guan Z, Tian B, Qi R, Huang R, Zhong N, Peng H, Yue F, Chu J H, Shi Y
    Coexistence of chiral phonons and antiferroelectricity in breathing kagome semiconductor Nb3I8 at room-temperature
    Researchsquare, 2023.

    | 标签: 传感器

    Journal Article

    Liu X, Zhang C, Li E, Gao C, Wang R, Liu Y, Liu F, Shi W, Yuan Y, Sun J, Lin Y-F, Chu J H, Li W
    Ultralow Off‐State Current and Multilevel Resistance State in Van der Waals Heterostructure Memristors
    Advanced Functional Materials, 2024, 34: 2309642.

    | 标签: 传感器

    Journal Article

    Tong H, Xu B, Zhu Q, Lin J, Ma H, Chen J, Wang H, Chen Y, Yang P, Chu J H
    Effects of pre-alloying process on the absorber quality for Cu2ZnSnS4 thin-film solar cells
    Materials Science in Semiconductor Processing, 2023, 165: 107699.

    | 标签: 传感器

    Journal Article

    Chen L, Zhang X, Feng G, Liu Y, Hao S, Zhu Q, Feng X, Qu K, Yang Z, Qi Y, Ivry Y, Dkhil B, Tian B, Chu J H, Duan C
    Ferroelectricity of pristine Hf0. 5Zr0. 5O2 films fabricated by atomic layer deposition
    Chinese Physics B, 2023, 32: 108102.

    | 标签: 传感器

    Journal Article

    Wu G, Zhang X, Feng G, Wang J, Zhou K, Zeng J, Dong D, Zhu F, Yang C, Zhao X, Gong D, Zhang M, Tian B, Duan C, Liu Q, Wang J, Chu J H, Liu M
    Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing
    Nature Materials, 2023, 22: 1499-1506.

    | 标签: 传感器

    Journal Article

    Zhao Q, Yan H, Wang X, Chen Y, Zhang S, Wu S, Huang X, Di Y, Xiong K, Zeng J, Jiao H, Lin T, He H, Ge J, Meng X, Shen H, Chu J H, Wang J
    Significant Suppression of Dark Current in a Surface Acoustic Wave Assisted MoS2 Photodetector
    Advanced Electronic Materials, 2023, 9: 2300496.

    | 标签: 传感器

    Journal Article

    Wang R, Qin D, Zheng S, Weng G, Hu X, Tao J, Chu J H, Akiyama H, Chen S
    Influence of S-content ratios on the defect properties of Sb2 (Sx, Se1–x) 3 thin-film solar cells
    Solar Energy Materials Solar Cells, 2023, 260: 112501.

    | 标签: 传感器

    Journal Article

    Yang S, Wen J, Wu Y, Zhu H, Liu A, Hu Y, Noh Y Y, Chu J H, Li W
    Unlocking the Potential of Tin‐Based Perovskites: Properties, Progress, and Applications in New‐Era Electronics
    Small, 2024, 20: 2304626.

    | 标签: 传感器

    Journal Article

    Wang J, Zhang S, Jiao H, Chen Y, Yin R, Huang X, Zhao Q, Tan C, Huang S, Yan H, Lin T, Shen H, Ge J, Meng X, Hu W, Dai N, Wang X, Chu J H
    Dual-band polarized photodetector based on van der Waals heterojunction
    Researchsquare, 2023.

    | 标签: 传感器

    Journal Article

    Xiong S, Chu J H, Bao Q
    Modulation of Perovskite Surface Energetics for State‐of‐the‐Art Solar Cells
    Solar RRL, 2023, 7: 2300458.

    | 标签: 传感器

    Journal Article

    Wang L, Deng M, Xu X, Hou Z, Li M, Chen L, Cui A, Jiang K, Shang L, Chu J H
    High‐Sensitivity Adjustable Operating Modes Multifunctional Detector Based on InSe/VO2 Heterojunction for Light and Electric Field Perception
    Advanced Optical Materials, 2023, 11: 2300854.

    | 标签: 传感器

    Journal Article

    Shi Q, Zhang S, Wang X, Chen Y, Zhou Y, Lin T, Shen H, Ge J, Meng X, Pan D, Zhao J, Hu W, Dai N, Chu J H, Wang J
    Ultralow Dark Current Room‐Temperature Infrared Photodetector Based on InSb Nanosheets/MoS2 Van der Waals Heterostructure
    physica status solidi, 2023, 220: 2300245.

    | 标签: 传感器

    Journal Article

    Zhao D, Jiao H, Chen C, Chen Y, Wang S, Cao H, Wang X, Yu G, Bai W, Tang X, Wang J, Chu J H
    Controllable Photocurrent Generation in Lateral Bilayer MoS2–WS2 Heterostructure
    Advanced Optical Materials, 2023, 11: 2300709.

    | 标签: 传感器

    Journal Article

    Du S, Tang J, Jin C, Jiang K, Shang L, Li Y, Zhang J, Zhu L, Chu J H, Hu Z
    Capacitive behavior dominated persistent lithium storage in the 3D carbon nanofibers with 1D molybdenum sulfide
    Journal of Alloys Compounds, 2023, 960: 170936.

    | 标签: 传感器

    Journal Article

    Zhu L, Liu S, Shao J, Chen X, Liu F, Hu Z, Chu J H
    Influence of Fröhlich Interaction on Intersubband Transitions of InGaAs/InAlAs-Based Quantum Cascade Detector Structures Investigated by Infrared Modulated Photoluminescence
    Chinese Physics Letters, 2023, 40: 077503.

    | 标签: 传感器

    Journal Article

    Qin Y, Guo T, Liu J, Lin T, Wang J, Chu J H
    Colloidal Quantum Dots in Very-Long-Wave Infrared Detection: Progress, Challenges, and Opportunities
    ACS omega, 2023, 8: 19137-19144.

    | 标签: 传感器

    Journal Article

    Zhong Z, Wu S, Li X, Wang Z, Yang Q, Huang B, Chen Y, Wang X, Lin T, Shen H, Meng X, Wang M, Shi W, Wang J, Chu J H, Huang H
    Robust threshold-switching behavior assisted by Cu migration in a ferroionic CuInP2S6 heterostructure
    ACS nano, 2023, 17: 12563-12572.

    | 标签: 传感器

    Journal Article

    Tian B, Xie Z, Chen L, Hao S, Liu Y, Feng G, Liu X, Liu H, Yang J, Zhang Y, Bai W, Lin T, Shen H, Meng X, Zhong N, Peng H, Yue F, Tang X, Wang J, Zhu Q, Ivry Y, Dkhil B, Chu J H, Duan C
    Ultralow‐power in‐memory computing based on ferroelectric memcapacitor network
    Exploration, 2023, 3: 20220126.

    | 标签: 传感器

    Journal Article

    Liu X, Wu G, Zeng J, Bai C, Li W, Wang J, Chu J H
    Two-dimensional α-In2Se3-based ferroelectric semiconductor junction for reconfigurable photodetectors
    Applied Physics Letters, 2023, 122:

    | 标签: 传感器

    Journal Article

    He Y, Su Z, Cao F, Cao Z, Liu Y, Zhao C, Weng G, Hu X, Tao J, Chu J H
    Lasing properties and carrier dynamics of CsPbBr3 perovskite nanocrystal vertical-cavity surface-emitting laser
    Nanophotonics, 2023, 12: 2133-2143.

    | 标签: 传感器

    Journal Article

    Liu S, Xie G, Li G, Yu S, Lu X, Yue F, Liu S, Jing C, Gong C, Chu J H
    Transmission and confocal imaging characteristics of bendable ABS/Ag-coated hollow waveguide at low THz band
    IEEE Transactions on Terahertz Science Technology, 2023, 13: 193-199.

    | 标签: 传感器

    Journal Article

    Zhang Y, Hou G, Wu Y, Chen M, Dai Y, Liu S, Zhao Q, Lin H, Fang J, Jing C, Chu J H
    Surface reconstruction of CsPbBr3 nanocrystals by the ligand engineering approach for achieving high quantum yield and improved stability
    Langmuir, 2023, 39: 6222-6230.

    | 标签: 传感器

    Journal Article

    Wu W, Shi Z, Ozerov M, Du Y, Wang Y, Ni X-S, Meng X, Pan C, Pan H, Sun Z, Chu J H
    Three-dimensional Van Hove singularity with divergent density of states in a topological magnet
    arXiv e-prints, 2023, arXiv: 2304.07043.

    | 标签: 传感器

    Journal Article

    Shen J, Guo Y, Fu T, Yao S, Zhou J, Wang D, Bi H, Zuo S, Wu X, Shi F, Jiang J, Chu J H
    Skin‐Inspired Hierarchical Structure Sensor for Ultrafast Active Human–Robot Interaction
    Advanced Materials Technologies, 2023, 8: 2202008.

    | 标签: 传感器

    Journal Article

    Pan X, Pan Y, Wang L, Zhao C, Hu X, Jiang J, Yang B, Chen S, Yang P, Chu J H
    Interfacial engineering by applying double CdS structure electron transport layer for high-performance Sb2 (S, Se) 3 solar cells
    Ceramics International, 2023, 49: 22471-22478.

    | 标签: 传感器

    Journal Article

    Ranjan A, Xu H, Wang C, Molina J, Wu X, Zhang H, Sun L, Chu J H, Pey K L
    Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy
    Applied Materials Today, 2023, 31: 101739.

    | 标签: 传感器

    Journal Article

    Zhou Z, Sang M, Zhang J, Wen Z, Qiu Q, Xu Q, Tan C, Zhou D, Qiao H, Li X, Sun Y, Dai N, Chu J H, Hao J
    Narrowband HgCdTe infrared photodetector with integrated plasmonic structure
    Optics Letters, 2023, 48: 1882-1885.

    | 标签: 传感器

    Journal Article

    Yang J, Jiang R, Chen C, Chen J, Cao Z, Li Y, Shang L, Jiang K, Zhang J, Zhu L, Hu Z, Chu J H
    Exploration on the growth of Bi2O2Se films and nanosheet by an ALD-assisted CVD method
    Journal of Materials Science: Materials in Electronics, 2023, 34: 788.

    | 标签: 传感器

    Journal Article

    Pan X, Pan Y, Shen L, Wang L, Wang R, Weng G, Jiang J, Hu X, Chen S, Yang P, Chu J H, Tao J
    All‐Vacuum‐Processed Sb2 (S, Se) 3 Thin Film Photovoltaic Devices via Controllable Tuning Seed Orientation
    Advanced Functional Materials, 2023, 33: 2214511.

    | 标签: 传感器

    Journal Article

    Liu S, Hou G, Wu Y, Yu S, Zha Z, Zhu Y, Zhang Y, Lu X, Liu S, Jing C, Chu J H
    Copper coated PEEK hollow waveguide and durability investigations for low-loss and bendable transmission of low-frequency terahertz wave
    Infrared Physics Technology, 2023, 131: 104674.

    | 标签: 传感器

    Journal Article

    Wang Z, Zhou X, Liu X, Qiu A, Gao C, Yuan Y, Jing Y, Zhang D, Li W, Luo H, Chu J H, Sun J
    Van der Waals ferroelectric transistors: the all-round artificial synapses for high-precision neuromorphic computing
    Chip, 2023, 2: 100044.

    | 标签: 传感器

    Journal Article

    Cheng Z, Xie X, Yang Y, Wang C, Luo C, Bi H, Wang Y, Chu J H, Wu X
    Neural network approach for ferroelectric hafnium oxide phase identification at the atomistic scale
    Materials Today Electronics, 2023, 3: 100027.

    | 标签: 传感器

    Journal Article

    Jiao H, Wang X, Wu S, Chen Y, Chu J H, Wang J
    Ferroelectric field effect transistors for electronics and optoelectronics
    Applied Physics Reviews, 2023, 10:

    | 标签: 传感器

    Journal Article

    Gao Y, Duan J, Jiang L, Zhou W, Huang J, Yao N, Huang Z, Chu J H
    Optical study on mesa structures with adjustable absorption based on Mn1. 56Co0. 96Ni0. 48O4 thin films
    Thin Solid Films, 2023, 768: 139711.

    | 标签: 传感器

    Journal Article

    Xu X, Li M, Li S, Cui A, Deng M, Jiang K, Zhu L, Shang L, Chu J H, Hu Z
    The Nanoscale Electrical Damage Mechanism of Ge₂Sb₂Te₅ Phase-Change Films Discovered by Conductive Atomic Force Microscopy
    IEEE Electron Device Letters, 2023, 44: 488-491.

    | 标签: 传感器

    Journal Article

    Zhou Z, Lin H, Pan X, Tan C, Zhou D, Wen Z, Sun Y, Hu S, Dai N, Chu J H
    Surface plasmon enhanced InAs-based mid-wavelength infrared photodetector
    Applied Physics Letters, 2023, 122:

    | 标签: 传感器

    Journal Article

    Xu Q, Zhou Z, Tan C, Pan X, Wen Z, Zhang J, Zhou D, Sun Y, Chen X, Zhou L, Dai N, Chu J H, Hao J
    A spectrally selective visible microbolometer based on planar subwavelength thin films
    Nanoscale Advances, 2023, 5: 2054-2060.

    | 标签: 传感器

    Journal Article

    Lin J, Chen Y, Wang H, Tian B, Chen Y, Zhou Z, Yue F, Huang R, Duan C-G, Chu J H
    Unveiling the Anomalous Photovoltaic Effect of Ferroelectric Domain Walls in Bi Fe O 3 Thin Films
    Physical Review Applied, 2023, 19: 024050.

    | 标签: 传感器

    Journal Article

    Liu X, Feng G, Feng X, Zhang J, Hao S, Zhu Q, Yue F, Zhong N, Peng H, Tang X, Yang Z, Huang R, Tian B, Chu J H, Duan C
    Ultrahigh rectification ratio in an asymmetric metal/semiconductor/metal nanoscale tunneling junction: Implications for high-frequency rectifiers
    ACS Applied Nano Materials, 2023, 6: 2491-2497.

    | 标签: 传感器

    Journal Article

    Li M, Li S, Deng M, Xu X, Dai K, Cui A, Zhou X, Jiang K, Shang L, Li Y, Zhang J, Zhu L, Chu J H, Hu Z
    Low-loss strong index modulated ultra-thermally stable optical phase-change material for broadband nonvolatile photonics
    Journal of Applied Physics, 2023, 133:

    | 标签: 传感器

    Journal Article

    Wang R, Qin D, Ding X, Zhang Q, Wang Y, Pan Y, Weng G, Hu X, Tao J, Chu J H
    Optimisation of Sb2S3 thin-film solar cells via Sb2Se3 post-treatment
    Journal of Power Sources, 2023, 556: 232451.

    | 标签: 传感器

    Journal Article

    Ren Y, Tian B, Yan M, Feng G, Gao B, Yue F, Peng H, Tang X, Zhu Q, Chu J H
    Associative learning of a three-terminal memristor network for digits recognition
    Science China Information Sciences, 2023, 66: 122403.

    | 标签: 传感器

    Journal Article

    Liu S, Xie G, Yu S, Lu X, Jing C, Chu J
    Fabrication of bendable low-loss terahertz hollow waveguides based on plastic tubes
    Earth and Space: From Infrared to Terahertz (ESIT 2022), 2023. SPIE.

    | 标签: 传感器

    Journal Article

    Yu S, Cai Y, Liu S, Zhu Y, Lu X, Jing C, Chu J H
    Structural design and fabrication of hollow optical fiber for transmitting mid-infrared and visible light
    Earth and Space: From Infrared to Terahertz (ESIT 2022), 2023. SPIE.

    | 标签: 传感器

    Journal Article

    Deng M, Wang X, Xu X, Cui A, Jiang K, Zhang J, Zhu L, Shang L, Li Y, Hu Z, Chu J H
    Directly measuring flexoelectric coefficients μ 11 of the van der Waals materials
    Materials Horizons, 2023, 10: 1309-1323.

    | 标签: 传感器

    Journal Article

    Lin R, Zhao D, Zhang J, Cao H, Zeng J, Wang X, Bai W, Yang J, Zhang Y, Tang X, Chen Y, Wang J, Chu J H
    Thickness-dependent semimetal-to-semiconductor transition in two-dimensional GaGeTe
    Journal of Applied Physics, 2023, 133:

    | 标签: 传感器

    Journal Article

    Sui F, Jin M, Zhang Y, Qi R, Wu Y-N, Huang R, Yue F, Chu J H
    Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor
    Nature communications, 2023, 14: 36.

    | 标签: 传感器

    Journal Article

    Zhou Y, Xiong K, Wu S, Tu L, Wang X, Chen Y, Wu S, Zeng J, Zheng Y, Gu S, Luo M, Lin T, Shen H, Meng X, Liu Q, Chu J H, Wang J
    Anomalous polarization-switching phenomena and noteworthy pyroelectricity in ferroelectric Hf0. 5Zr0. 5O2 polycrystalline films
    Materials Today Physics, 2024, 43: 101414.

    | 标签: 传感器

    Journal Article

    Hou Z, Li M, Xu Z, Deng M, Li S, Wang L, Shang L, Wu L, Chu J H, Hu Z
    Low Energy Consumption GeTe Phase-Change Radio Frequency Switch With Direct Heating of Conductive Filament
    IEEE Electron Device Letters, 2023

    | 标签: 传感器

    Journal Article

    Wang L, Qin D, Wang R, Razzaq S, Zhao C, Yang P, Hu X, Jiang J, Chen S, Yang P, Chu J H
    Back contact passivation of Sb2Se3 solar cells via antimony trichloride solution
    Solar Energy Materials Solar Cells, 2024, 269: 112757.

    | 标签: 传感器

    Journal Article

    Hou G, Liu S, Zhu Y, Yu S, Zha Z, Zhao Q, Liu S, Jing C, Chu J H
    Fabrication of Ag/PP terahertz hollow waveguide by vacuum evaporation method and transmission performance investigations
    Optical Materials, 2024, 147: 114710.

    | 标签: 传感器

    Journal Article

    Li G, Hou G, Zhang X, Yu C, Han D, Jing C, Chu J H
    Non-stoichiometric hybrid halide perovskite film for gaseous NH 3 and HCl sensing
    New Journal of Chemistry, 2023, 47: 12541-12545.

    | 标签: 传感器

    Journal Article

    Guo Y, Zhao F, Yang P, Gao M, Shen J, Tao J, Jiang J, Chu J H
    DMAI-driven all-inorganic antimony-based perovskite-inspired solar cells with record open-circuit voltage
    Journal of Materials Chemistry A, 2023, 11: 6474-6482.

    | 标签: 传感器

    Journal Article

    Chen L, Cui A, Li M, Li S, Gong S, Jiang K, Zhang J, Zhu L, Shang L, Li Y, Chu J H
    Optical excitation-induced ultrafast amorphization in the Y-Sb-Te alloy system: Insights from real-time time-dependent DFT with molecular dynamics calculations
    Physical Review B, 2022, 106: 214110.

    | 标签: 传感器

    Journal Article

    Cao H, Zhang J, Bai W, Zhao D, Lin R, Wang X, Yang J, Zhang Y, Qi R, Huang R, Chu J H
    Molecular beam epitaxy, photoluminescence from Mn2+ multiplets and self-trapped exciton states of γ-MnTe single-crystalline thin films
    Applied Surface Science, 2023, 611: 155733.

    | 标签: 传感器

    Conference

    Jiangsen Yang, Liangjian Lyu,Zirui Dong,Heyu Ren,C.-J. Richard Shi

    A 28-nW Noise-Robust Voice Activity Detector with Background Aware Feature Extraction

    November 2023

    Links | 标签: 语音识别算法

    10.1109/A-SSCC58667.2023.10347926



    Journal Article

    Zewei Luo, Junhao Shen, Xu Ran, Zepeng Huang, Zaofeng Huang, Chaolun Wang, Chunhua Cai, Liangjian Lyv, Xin Lin, Litao Sun, Junhao Chu, Hengchang Bi, Xing Wu
    Highly Sensitive and Linear Vibration-Based Flexible Modulus Sensing System for Human Modulus Monitoring and Disease Prevention
    December 17, 2023

    Links | 标签: 传感器可靠性    


    Conference

    Jialu Huang Xu Ran, Xing Wu; Bi, Hengchang
    Graphene oxide hydrogel coated membrane for efficient oil-water separation
    IWARR Shenzheng, Forthcoming.

    BibTeX | 标签: 石墨烯


    @conference{none,
    title = {Graphene oxide hydrogel coated membrane for efficient oil-water separation},
    author = {Xu Ran, Jialu Huang, Xing Wu, and Hengchang Bi},
    year = {2023},
    date = {2023-11-01},
    urldate = {2023-11-01},
    address = {Shenzheng},
    organization = {IWARR},
    keywords = {石墨烯},
    tppubtype = {conference}
    }



    Conference

    Xing Wu Xu Ran,; Bi, Hengchang
    Graphene baseddegradable and antibacterial strainsensor for wound detection
    Nature Conference-Flexible Electronics-Science for a Sustainable World Xiamen, Forthcoming.

    BibTeX | 标签: 传感器


    @conference{nokey,
    title = { Graphene baseddegradable and antibacterial strainsensor for wound detection},
    author = {Xu Ran, Xing Wu, and Hengchang Bi},
    year = {2023},
    date = {2023-10-31},
    urldate = {2023-10-31},
    address = {Xiamen},
    organization = {Nature Conference-Flexible Electronics-Science for a Sustainable World},
    keywords = {传感器},
    tppubtype = {conference}
    }



    Conference

    Wang, Qinzhen; Gu, Wenxian; Bi, Hengchang; Lyu, Liangjian; Qiao, Deli; Wu, Xing
    A Spike-Sorting-Assisted Compressed Sensing Processor for High-Density Neural Interfaces
    ASICON, Nanjing, Forthcoming.

    Links | BibTeX | 标签: 芯片设计


    @conference{nokey,
    title = {A Spike-Sorting-Assisted Compressed Sensing Processor for High-Density Neural Interfaces},
    author = {Qinzhen Wang and Wenxian Gu and Hengchang Bi and Liangjian Lyu and Deli Qiao and Xing Wu},
    url = {http://www.asicon.org/},
    year = {2023},
    date = {2023-10-24},
    publisher = {ASICON},
    address = {Nanjing},
    keywords = {芯片设计},
    tppubtype = {conference}
    }



    Conference

    Zheng, Xinyue; Zhang, Shiyi; Zhang, Mingyang; Li, Xiaomei; Wu, Xing
    In Situ Device and System
    ASICON, Nanjing, Forthcoming.

    Links | BibTeX | 标签: 原位电镜    


       

    @conference{nokey,
    title = {In Situ Device and System},
    author = {Xinyue Zheng and Shiyi Zhang and Mingyang Zhang and Xiaomei Li and Xing Wu},
    url = {http://www.asicon.org/},
    year = {2023},
    date = {2023-10-24},
    journal = {International Conference on ASIC},
    publisher = {ASICON},
    address = {Nanjing},
    keywords = {原位电镜},
    tppubtype = {conference}
    }
       


       


    Journal Article

    Sheng, Zhiwei; Xie, Jing; Zhang, Shiyi; Zhang, Mingyang; Luo, Chen; Dong, Zuoyuan; Wang, Yan; Wu, Xing; Wang, Chaolun
    Deep Learning for Analysis of Two-Dimensional Materials in High-Resolution Transmission Electron Microscopy Image
    In: 2023.

    Links | BibTeX | 标签: 原位电镜


    @article{@INPROCEEDINGS,
    title = {Deep Learning for Analysis of Two-Dimensional Materials in High-Resolution Transmission Electron Microscopy Image},
    author = {Zhiwei Sheng and Jing Xie and Shiyi Zhang and Mingyang Zhang and Chen Luo and Zuoyuan Dong and Yan Wang and Xing Wu and Chaolun Wang},
    doi = { 10.1109/IPFA58228.2023.10249141},
    year = {2023},
    date = {2023-09-30},
    urldate = {2023-09-30},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Gui, Chen; Zhang, Zhihao; Li, Zongyi; luo, Chen; Xia, Jiang; Wu, Xing; Chu, Junhao
    Deep learning analysis on transmission electron microscope imaging of atomic defects in two-dimensional materials
    In: iScience, vol. 26, iss. 10, no. 107982, 2023.

    Links | BibTeX | 标签: 原位电镜


    @article{nokey,
    title = {Deep learning analysis on transmission electron microscope imaging of atomic defects in two-dimensional materials},
    author = {Chen Gui and Zhihao Zhang and Zongyi Li and Chen luo and Jiang Xia and Xing Wu and Junhao Chu},
    doi = {https://doi.org/10.1016/j.isci.2023.107982},
    year = {2023},
    date = {2023-09-21},
    urldate = {2023-09-21},
    journal = {iScience},
    volume = {26},
    number = {107982},
    issue = {10},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }



    Conference

    Zuoyuan Dong,; Zixuan Sun,; Xin Yang,; Xiaomei Li,; Yongkang Xue,; Chen Luo,; Puyang Cai,; Zirui Wang,; Shuying Wang,; Yewei Zhang,; Chaolun Wang,; Pengpeng Ren,; Zhigang Ji,; Xing Wu,; Runsheng Wang,; Huang, Ru
    Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence
    2023.

    Links | BibTeX | 标签: 可靠性


    @conference{nokey,
    title = {Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence},
    author = {Zuoyuan Dong, and Zixuan Sun, and Xin Yang, and Xiaomei Li, and Yongkang Xue, and Chen Luo, and Puyang Cai, and Zirui Wang, and Shuying Wang, and Yewei Zhang, and Chaolun Wang, and Pengpeng Ren, and Zhigang Ji, and Xing Wu, and Runsheng Wang, and Ru Huang},
    doi = { 10.23919/VLSITechnologyandCir57934.2023.10185380},
    year = {2023},
    date = {2023-07-24},
    urldate = {2023-07-24},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }



    Conference

    Ran, X.; Wu, X.; Bi, H.
    Reason for the failure of PDMS pacaking to Cure on Reduced Graphene Oxide Films
    CSTIC, 2023.

    BibTeX | 标签: 可靠性 石墨烯    


       

    @conference{nokey,
    title = {Reason for the failure of PDMS pacaking to Cure on Reduced Graphene Oxide Films},
    author = {X. Ran and X. Wu and H. Bi},
    year = {2023},
    date = {2023-06-26},
    urldate = {2023-06-26},
    publisher = {CSTIC},
    keywords = {可靠性, 石墨烯},
    pubstate = {published},
    tppubtype = {conference}
    }
       


       


    Conference

    Huang, Chengfeng; Wu, Xing; Bi, Hengchang
    Flexible Strain Sensors Pacaking
    CSTIC, 2023.

    BibTeX | 标签: 传感器


    @conference{nokey,
    title = {Flexible Strain Sensors Pacaking},
    author = { Chengfeng Huang and Xing Wu and Hengchang Bi},
    year = {2023},
    date = {2023-06-26},
    urldate = {2023-06-26},
    publisher = {CSTIC},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {conference}
    }



    Conference

    Ren, Heyu; Ye, Dawei; Chen, Binbin; Gong, Wenjun; Jin, Xu; Xu, Rongjin; Lyu, Liangjian; Xu, Ling; Shi, C. -J. Richard
    A 19- μ W Blocker-Tolerant Wake-Up Receiver With − 90-dBm Energy-Enhanced Sensitivity
    In: IEEE Transactions on Microwave Theory and Techniques, pp. 1-16, 2023, ISSN: 0018-9480.

    Links | BibTeX | 标签: 传感器 芯片设计


    @article{nokey,
    title = {A 19- μ W Blocker-Tolerant Wake-Up Receiver With − 90-dBm Energy-Enhanced Sensitivity},
    author = {Heyu Ren and Dawei Ye and Binbin Chen and Wenjun Gong and Xu Jin and Rongjin Xu and Liangjian Lyu and Ling Xu and C.-J. Richard Shi},
    url = {https://ieeexplore.ieee.org/document/10136382/authors#authors},
    doi = {10.1109/TMTT.2023.3267542},
    issn = {0018-9480},
    year = {2023},
    date = {2023-05-25},
    urldate = {2023-05-25},
    journal = {IEEE Transactions on Microwave Theory and Techniques},
    pages = {1-16},
    keywords = {传感器, 芯片设计},
    pubstate = {published},
    tppubtype = {article}
    }



    Conference

    Ye, C.; Liu, D.; Bi, H.; Wu, X.; Wang, C.
    Thermal Stability of VSe2 Investigated by In situ Transmission Electron Microscope
    IEEE IPFA, 2023.

    BibTeX | 标签: 原位电镜 可靠性


    @conference{nokey,
    title = {Thermal Stability of VSe2 Investigated by In situ Transmission Electron Microscope},
    author = { C. Ye and D. Liu and H. Bi and X. Wu and C. Wang},
    year = {2023},
    date = {2023-04-21},
    urldate = {2023-04-21},
    publisher = {IEEE IPFA},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }



    Conference

    Zhang, Z.; Chen, Z.; Shen, J.; Luo, C.; Li, X.; Wang, C.; Yang, X.; Wu, X.
    Exploration of TEM Sample Preparation for GaN Dislocations Based on In situ FIB-SEM
    IEEE IPFA, 2023.

    BibTeX | 标签: 原位电镜 可靠性


    @conference{nokey,
    title = {Exploration of TEM Sample Preparation for GaN Dislocations Based on In situ FIB-SEM},
    author = { Z. Zhang and Z. Chen and J. Shen and C. Luo and X. Li and C. Wang and X. Yang and X. Wu},
    year = {2023},
    date = {2023-04-21},
    urldate = {2023-04-21},
    publisher = {IEEE IPFA},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }



    Conference

    Shen, J.; Sun, Y.; Gong, D.; Zheng, X.; Zuo, S.; Shi, F.; Wu, X.; Bi, H
    Reliability Study of the Three-dimensional Porous Flexible Resistive Pressure Sensor
    IEEE IPFA, 2023.

    BibTeX | 标签: 传感器 可靠性


    @conference{nokey,
    title = {Reliability Study of the Three-dimensional Porous Flexible Resistive Pressure Sensor},
    author = {J. Shen and Y. Sun and D. Gong and X. Zheng and S. Zuo and F. Shi and X. Wu and H. Bi},
    year = {2023},
    date = {2023-04-21},
    urldate = {2023-04-21},
    publisher = {IEEE IPFA},
    keywords = {传感器, 可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }



    Conference

    Sheng, Z.; Zhang, S.; Zhang, M.; Luo, C.; Dong, Z.; Wang, Y.; Wu, X.; Wang, C.
    Deep Learning for Analysis of Two-Dimensional Materials in High-Resolution Transmission Electron Microscopy Image
    IEEE IPFA, 2023.

    BibTeX | 标签: 原位电镜


    @conference{nokey,
    title = {Deep Learning for Analysis of Two-Dimensional Materials in High-Resolution Transmission Electron Microscopy Image},
    author = {Z. Sheng and S. Zhang and M. Zhang and C. Luo and Z. Dong and Y. Wang and X. Wu and C. Wang},
    year = {2023},
    date = {2023-04-21},
    urldate = {2023-04-21},
    publisher = {IEEE IPFA},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {conference}
    }



    Journal Article

    Shen, Junhao; Guo, Yixin; Fu, Tianyu; Yao, Shengping; Zhou, Jun; Wang, Dongfeng; Bi, Hengchang; Zuo, Shaohua; Wu, Xing; Shi, Fuwen; Jiang, Jinchun; Chu, Junhao
    Skin-Inspired Hierarchical Structure Sensor for Ultrafast Active Human–Robot Interaction
    In: Advanced Materials Technologies, no. 202202008, pp. 1-12, 2023, ISSN: 2365-709X.

    Links | BibTeX | 标签: 传感器 石墨烯


    @article{nokey,
    title = {Skin-Inspired Hierarchical Structure Sensor for Ultrafast Active Human–Robot Interaction},
    author = {Junhao Shen and Yixin Guo and Tianyu Fu and Shengping Yao and Jun Zhou and Dongfeng Wang and Hengchang Bi and Shaohua Zuo and Xing Wu and Fuwen Shi and Jinchun Jiang and Junhao Chu},
    url = {https://onlinelibrary.wiley.com/doi/10.1002/admt.202202008},
    doi = {10.1002/admt.202202008},
    issn = {2365-709X},
    year = {2023},
    date = {2023-04-04},
    urldate = {2023-04-04},
    journal = {Advanced Materials Technologies},
    number = {202202008},
    pages = {1-12},
    keywords = {传感器, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }



    Conference

    Dong, Z.; Sun, Z.; Yang, X.; Li, X.; Xue, Y.; Luo, C.; Cai, P.; Wang, Z.; Wang, S.; Zhang, Y.; Wang, C.; Ren, P.; Ji, Z.; Wu, X.; Wang, R.; Huang, R.
    Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence
    IEEE Symposium on VLSI Technology and Circuits (VLSI), 2023.

    BibTeX | 标签: 原位电镜 可靠性


    @conference{nokey,
    title = {Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence},
    author = {Z. Dong and Z. Sun and X. Yang and X. Li and Y. Xue and C. Luo and P. Cai and Z. Wang and S. Wang and Y. Zhang and C. Wang and P. Ren and Z. Ji and X. Wu and R. Wang and R. Huang},
    year = {2023},
    date = {2023-03-31},
    urldate = {2023-03-31},
    publisher = {IEEE Symposium on VLSI Technology and Circuits (VLSI)},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }



    Journal Article

    Mu, Geng; Lyu, Liangjian; Ye, Dawei; Shi, C. -J. Richard
    A Chopper Amplifier with a Low Duty-cycle Sub-sampling In The Switched-capacitor Integrator for Noise Reduction
    In: Electronics Letters, vol. 59, iss. 7, pp. 1-16, 2023, ISSN: 0013-5194.

    Links | BibTeX | 标签: 传感器 芯片设计


    @article{nokey,
    title = {A Chopper Amplifier with a Low Duty-cycle Sub-sampling In The Switched-capacitor Integrator for Noise Reduction},
    author = {Geng Mu and Liangjian Lyu and Dawei Ye and C.-J. Richard Shi},
    url = {https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/ell2.12774},
    doi = {https://doi.org/10.1049/ell2.12774},
    issn = {0013-5194},
    year = {2023},
    date = {2023-03-25},
    urldate = {2023-03-25},
    journal = {Electronics Letters},
    volume = {59},
    issue = {7},
    pages = {1-16},
    keywords = {传感器, 芯片设计},
    pubstate = {published},
    tppubtype = {article}
    }



    Conference

    Zhang, Z.; Li, Q.; Dong, Zuoyuan; Wang, Wanting; Lai, Shentao; Yang, Xin; Liang, Fang; Wang, Chaolun; Luo, Chen; Lyu, Liangjian; Xu, Jiamin; Wu, Xing
    Microscopic Characterization of Failure Mechanisms in Long-Term Implanted Microwire Neural Electrodes
    IEEE IRPS, 2023.

    BibTeX | 标签: 传感器 可靠性


    @conference{nokey,
    title = {Microscopic Characterization of Failure Mechanisms in Long-Term Implanted Microwire Neural Electrodes},
    author = { Z. Zhang and Q. Li and Zuoyuan Dong and Wanting Wang and Shentao Lai and Xin Yang and Fang Liang and Chaolun Wang and Chen Luo and Liangjian Lyu and Jiamin Xu and Xing Wu},
    year = {2023},
    date = {2023-03-16},
    urldate = {2023-03-16},
    publisher = { IEEE IRPS},
    keywords = {传感器, 可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }



    Journal Article

    Cheng, Zhiheng; Xie, Xingran; Yang, Yimin; Wang, Chaolun; Luo, Chen; Bi, Hengchang; Wang, Yan; Chu, Junhao; Wu, Xing
    Neural Network Approach for Ferroelectric Hafnium Oxide Phase Identification at The Atomistic Scale
    In: Materials Today Electronics, vol. 3, iss. 1, no. 100027, pp. 1-7, 2023, ISSN: 2772-9494.

    Links | BibTeX | 标签: 原位电镜


    @article{nokey,
    title = {Neural Network Approach for Ferroelectric Hafnium Oxide Phase Identification at The Atomistic Scale},
    author = {Zhiheng Cheng and Xingran Xie and Yimin Yang and Chaolun Wang and Chen Luo and Hengchang Bi and Yan Wang and Junhao Chu and Xing Wu},
    url = {https://www.sciencedirect.com/science/article/pii/S2772949423000037},
    doi = {10.1016/j.mtelec.2023.100027},
    issn = {2772-9494},
    year = {2023},
    date = {2023-03-05},
    urldate = {2023-03-05},
    journal = {Materials Today Electronics},
    volume = {3},
    number = {100027},
    issue = {1},
    pages = {1-7},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Li, Xiaomei; Han, Bo; Zhu, Ruixue; Shi, Ruochen; Wu, Mei; Sun, Yuanwei; Li, Yuehui; Liu, Bingyao; Wang, Lifen; Zhang, Jingmin; Tan, Congbing; Gao, Peng; Bai, Xuedong
    Dislocation-tuned Ferroelectricity and Ferromagnetism of the BiFeO3/SrRuO3 Interface
    In: Proceedings of the National Academy of Sciences, vol. 120, no. 13, pp. e2213650120, 2023, ISSN: 0027-8424.

    Links | BibTeX


    @article{nokey,
    title = {Dislocation-tuned Ferroelectricity and Ferromagnetism of the BiFeO3/SrRuO3 Interface},
    author = {Xiaomei Li and Bo Han and Ruixue Zhu and Ruochen Shi and Mei Wu and Yuanwei Sun and Yuehui Li and Bingyao Liu and Lifen Wang and Jingmin Zhang and Congbing Tan and Peng Gao and Xuedong Bai},
    url = {https://doi.org/10.1073/pnas.2213650120},
    doi = {10.1073/pnas.2213650120},
    issn = {0027-8424},
    year = {2023},
    date = {2023-02-05},
    urldate = {2023-02-05},
    journal = {Proceedings of the National Academy of Sciences},
    volume = {120},
    number = {13},
    pages = {e2213650120},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Shen, Junhao; Gong, Danni; Li, Peiyang; Sun, Yuhan; Zuo, Shaohua; Shi, Fuwen; Wu, Xing; Chu, Junchao
    Design Intelligent Pressure Sensing Devices and System Integrated with Conductor-Coated Porous Composites
    In: Advanced Sensor Research, vol. 2, iss. 1, 2023, ISSN: 2751-1219.

    Links | BibTeX | 标签: 传感器 石墨烯


    @article{nokey,
    title = {Design Intelligent Pressure Sensing Devices and System Integrated with Conductor-Coated Porous Composites},
    author = {Junhao Shen and Danni Gong and Peiyang Li and Yuhan Sun and Shaohua Zuo and Fuwen Shi and Xing Wu and Junchao Chu},
    url = {https://onlinelibrary.wiley.com/doi/full/10.1002/adsr.202200091},
    doi = {10.1002/adsr.2022},
    issn = {2751-1219},
    year = {2023},
    date = {2023-02-02},
    urldate = {2023-02-02},
    journal = {Advanced Sensor Research},
    volume = {2},
    issue = {1},
    keywords = {传感器, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }



    Conference

    Yang, Shufan; Kernec, Julien Le; Romain, Olivier; Fioranelli, Francesco; Cadart, Pierre; Fix, Jérémy; Ren, Chenfang; Manfredi, Giovanni; Letertre, Thierry; Sáenz, Israel David Hinostroza; Zhang, Jifa; Liang, Huaiyuan; Wang, Xiangrong; Li, Gang; Chen, Zhaoxi; Liu, Kang; Chen, Xiaolong; Li, Jiefang; Wu, Xing; Chen, Yichang; Jin, Tian
    The Human Activity Radar Challenge: Benchmarking Based on the ‘Radar Signatures of Human Activities’ Dataset From Glasgow University
    Institute of Electrical and Electronics Engineers, vol. 27, 2023, ISBN: 2168-2194.

    Links | BibTeX | 标签: 传感器


    @conference{nokey,
    title = {The Human Activity Radar Challenge: Benchmarking Based on the ‘Radar Signatures of Human Activities’ Dataset From Glasgow University},
    author = {Shufan Yang and Julien Le Kernec and Olivier Romain and Francesco Fioranelli and Pierre Cadart and Jérémy Fix and Chenfang Ren and Giovanni Manfredi and Thierry Letertre and Israel David Hinostroza Sáenz and Jifa Zhang and Huaiyuan Liang and Xiangrong Wang and Gang Li and Zhaoxi Chen and Kang Liu and Xiaolong Chen and Jiefang Li and Xing Wu and Yichang Chen and Tian Jin},
    url = {https://ieeexplore.ieee.org/document/10032210?source=authoralert},
    doi = {10.1109/JBHI.2023.3240895},
    isbn = {2168-2194},
    year = {2023},
    date = {2023-01-30},
    urldate = {2023-01-30},
    booktitle = {Institute of Electrical and Electronics Engineers},
    volume = {27},
    issue = {4},
    pages = {1813 - 1824},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {conference}
    }



    Journal Article

    Ranjan, Alok; HejunXu,; Wang, Chaolun; Molina, Joel; Wu, Xing; Zhang, Hui; Sun, Litao; Chu, Junhao; LeongPey, Kin
    Probing Resistive Switching in HfO2/Al2O3 Bilayer Oxides Using In-situ Transmission Electron Microscopy
    In: Applied Materials Today, vol. 31, 2023, ISSN: 2352-9407./

    Links | BibTeX | 标签: 原位电镜 可靠性

    @article{nokey,
    title = {Probing Resistive Switching in HfO2/Al2O3 Bilayer Oxides Using In-situ Transmission Electron Microscopy},
    author = {Alok Ranjan and HejunXu and Chaolun Wang and Joel Molina and Xing Wu and Hui Zhang and Litao Sun and Junhao Chu and Kin LeongPey },
    url = {https://www.sciencedirect.com/science/article/pii/S2352940723000094},
    doi = {10.1016/j.apmt.2023.101739},
    issn = {2352-9407},
    year = {2023},
    date = {2023-01-19},
    journal = {Applied Materials Today},
    volume = {31},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }

  • 2022

    Journal Article

    Zhou X, Li M, Zhang J, Shang L, Jiang K, Li Y, Zhu L, Chu J H, Hu Z
    Flexible Solar-Blind Photodetectors Based on β-GaO Films Transferred by a Stamp-Based Printing Technique
    IEEE Electron Device Letters, 2022, 43: 1921-1924.

    | 标签: 传感器

    Journal Article

    Cheng J, Zhao Q, Zheng Y, Lin T, Meng X, Shen H, Wang X, Wang J, Chu J H
    Analytic expressions for topologically protected edge states in Su–Schrieffer–Heeger model
    Solid State Communications, 2022, 357: 114970.

    | 标签: 传感器

    Journal Article

    Chen J, Gao Y, Yang J, Wang Q, Cao Y, Jiang K, Li Y, Zhang J, Zhu L, Shang L, Chu J H
    Vertical MoSe 2–WSe 2 pn Heterojunctions Grown by One-Pot Chemical Vapor Deposition for Ultrafast Photodetection
    IEEE Electron Device Letters, 2022, 43: 1776-1779.

    | 标签: 传感器

    Journal Article

    Li S, Li M, Chen L, Xu X, Cui A, Zhou X, Jiang K, Shang L, Li Y, Zhang J, Chu J H
    Ultra-Stable, Endurable, and Flexible Sb2Te x Se3–x Phase Change Devices for Memory Application and Wearable Electronics
    ACS applied materials interfaces, 2022, 14: 45600-45610.

    | 标签: 传感器

    Journal Article

    Wu W, Shi Z, Du Y, Wang Y, Qin F, Meng X, Liu B, Ma Y, Yan Z, Ozerov M, Zhang C, Lu H, Chu J H, Yuan X
    Topological Lifshitz transition and one-dimensional Weyl mode in HfTe5
    Nature Materials, 2023, 22: 84-91.

    | 标签: 传感器

    Journal Article

    Luo C, Dong Z, Xu T, Yang X, Zhang H, Bi H, Wang C, Sun L, Chu J H, Wu X
    Tailoring the phase transition of silver selenide at the atomistic scale
    Nanoscale, 2022, 14: 16077-16084.

    | 标签: 传感器

    Journal Article

    Meng X, Du Y, Wu W, Joseph N B, Deng X, Wang J, Ma J, Shi Z, Liu B, Ma Y, Yue F, Zhong N, Xiang P, Zhang C, Duan C, Narayan A, Sun Z, Chu J H, Yuan X
    Giant superlinear power dependence of photocurrent based on layered Ta2NiS5 photodetector
    Advanced science, 2023, 10: 2300413.

    | 标签: 传感器

    Journal Article

    Du S, Ao L, Tang J, Jiang K, Shang L, Li Y, Zhang J, Zhu L, Hu Z, Chu J H
    Hierarchical MoS2 nanotubes supported by tubular CoS2 on carbon cloth as flexible electrodes for durable lithium-ion storage
    ACS Applied Energy Materials, 2022, 5: 10056-10066.

    | 标签: 传感器

    Journal Article

    Xu Q, Wen Z, Pan X, Tan C, Zhang J, Qiu Q, Sun Y, Chen X, Dai N, Chu J H
    Ultra-thin midwavelength infrared absorber using bismuth based planar thin film metamaterials
    Applied Physics Express, 2022, 15: 082005.

    | 标签: 传感器

    Journal Article

    Qin D, Wang R, Wang Y, Pan Y, Weng G, Hu X, Tao J, Chen S, Zhu Z, Chu J H
    Effects of working pressure on the material and defect properties of Sb 2 S 3 thin-film solar cells achieved by the VTD method
    Applied Optics, 2022, 61: 6879-6887.

    | 标签: 传感器

    Journal Article

    Cheng Z, Wang C, Wu X, Chu J H
    Review in situ transmission electron microscope with machine learning
    Journal of Semiconductors, 2022, 43: 081001.

    | 标签: 传感器

    Journal Article

    Jin C, Zhai P, Tang J, Huo L, He Q, Ye Y, Qiu L, Jiang K, Shang L, Li Y, Chu J H
    Ultrathin NiO/Ni3S2 heterostructure as electrocatalyst for accelerated polysulfide conversion in lithium–sulfur batteries
    Energy Environmental Materials, 2023, 6: e12491.

    | 标签: 传感器

    Journal Article

    Qin X, Xu B, Lin J, Chen J, Tong H, Chen Y, Yang P, Chu J H, Sun L
    Above 10% efficient electrodeposited Cu2ZnSn (S, Se) 4 solar cell achieved by modifying precursor
    Solar Energy Materials Solar Cells, 2022, 242: 111781.

    | 标签: 传感器

    Journal Article

    Luo Z, Huang Z, Liu X, Ye C, Luo C, Wang C, Cai C, Lv L, Bi H, Chu J H
    Self‐Adaptive Hierarchical Gradient Structure‐Based In Situ Sensor with High‐Pressure Resolution
    Advanced Materials Technologies, 2023, 8: 2200848

    | 标签: 传感器

    Journal Article

    Luo C, Wang C, Ma S, Liang F, Luo Z, Wu X, Chu J H
    In situ transmission electron microscope study of reliability in molybdenum disulfide based strain sensors
    2022 International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), IEEE, 2022.

    | 标签: 传感器

    Journal Article

    Dai M, Gao C, Nie Q, Wang Q J, Lin Y F, Chu J, Li W, Chu J H
    Properties, synthesis, and device applications of 2D layered InSe
    Advanced Materials Technologies, 2022, 7: 2200321.

    | 标签: 传感器

    Journal Article

    Tian J, Weng G, Liu Y, Chen S, Cao F, Zhao C, Hu X, Luo X, Chu J H, Akiyama H
    Gain-switching in CsPbBr3 microwire lasers
    Communications Physics, 2022, 5: 160.

    | 标签: 传感器

    Journal Article

    Wu S, Chen Y, Wang X, Jiao H, Zhao Q, Huang X, Tai X, Zhou Y, Chen H, Wang X, Huang S, Yan H, Lin T, Shen H, Hu W, Meng X, Chu J H, wang j
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    Nature communications, 2022, 13: 3198.

    | 标签: 传感器

    Journal Article

    Wang Y, Li L, Jia Y, Hu X, Weng G, Luo X, Chen S, Zhu Z, Chu J H, Akiyama H
    Defect‐induced current coupling in multi‐junction solar cells revealed by absolute electroluminescence imaging
    Progress in Photovoltaics: Research Applications, 2022, 30: 1410-1422.

    | 标签: 传感器

    Journal Article

    Li W, Huang F, Gao C, Sun Y, Guo X, Chen Y-T, Chu J H, Lai Y-C
    Highly radiation-tolerant polymer field-effect transistors with polystyrene dielectric layer
    Nano Energy, 2022, 100: 107452.

    | 标签: 传感器

    Journal Article

    Pan Y, Pan X, Wang R, Hu X, Chen S, Tao J, Yang P, Chu J H
    Vapor transport deposition of Sb2 (S, Se) 3 solar cells with continuously tunable band gaps
    ACS Applied Energy Materials, 2022, 5: 7240-7248.

    | 标签: 传感器

    Journal Article

    She C, Li G, Zhang W, Xie G, Zhang Y, Li L, Yue F, Liu S, Jing C, Cheng Y, Chu J H
    A flexible polypyrrole/silk-fiber ammonia sensor assisted by silica nanosphere template
    Sensors Actuators A: Physical, 2021, 317: 112436.

    | 标签: 传感器

    Journal Article

    Jiao H, Wang X, Chen Y, Guo S, Wu S, Song C, Huang S, Huang X, Tai X, Lin T, Shen H, Yan H, Hu W, Meng X, Chu J H, Zhang Y, Wang J
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    Science Advances, 2022, 8: eabn1811.

    | 标签: 传感器

    Journal Article

    Xu B, Qin X, Lin J, Chen J, Tong H, Qi R, Yue F, Chen Y, Yang P, Chu J H
    Positive role of inhibiting CZTSSe decomposition on intrinsic defects and interface recombination of 12.03% efficient kesterite solar cells
    Solar RRL, 2022, 6: 2200256.

    | 标签: 传感器

    Journal Article

    Shen Z, Liao L, Zhou Y, Xiong K, Zeng J, Wang X, Chen Y, Liu J, Guo T, Zhang S, Chu J H
    Epitaxial growth and phase evolution of ferroelectric La-doped HfO2 films
    Applied Physics Letters, 2022, 120:

    | 标签: 传感器

    Journal Article

    Zhou X, Li M, Zhang J, Shang L, Jiang K, Li Y, Zhu L, Hu Z, Chu J H
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    IEEE Electron Device Letters, 2022, 43: 580-583.

    | 标签: 传感器

    Journal Article

    Yang X, Luo C, Tian X, Liang F, Xia Y, Chen X, Wang C, Liang S X, Wu X, Chu J H
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    Journal of Semiconductors, 2021, 42: 013102.

    | 标签: 传感器

    Journal Article

    Lu X, Jing C, Chu J H, Hu Z, Wang L, Yao M, Xie G, She C, Liu S, Yu S
    Flexible ABS hollow waveguides with an inner copper coating for terahertz transmission
    Optics Laser Technology, 2022, 148: 107700.

    | 标签: 传感器

    Journal Article

    Zhang Z, Wang W, Dong Z, Yang X, Liang F, Chen X, Wang C, Luo C, Zhang J, Wu X, Sun L, Chu J H
    The trends of in situ focused ion beam technology: toward preparing transmission electron microscopy lamella and devices at the atomic scale
    Advanced Electronic Materials, 2022, 8: 2101401.

    | 标签: 传感器

    Journal Article

    Lao J, Yan M, Tian B, Jiang C, Luo C, Xie Z, Zhu Q, Bao Z, Zhong N, Tang X, Chu J H
    Ultralow‐power machine vision with self‐powered sensor reservoir
    Advanced science, 2022, 9: 2106092.

    | 标签: 传感器

    Journal Article

    Liu Y, Weng G, Cao F, Wang Y, Wan W, Wang C, Nakamae H, Kim C, Hu X, Luo X, Chu J H
    Carrier dynamics of AlGaAs/AlAs asymmetric double quantum wells with different barrier thickness
    Optical Materials Express, 2022, 12: 1291-1302.

    | 标签: 传感器

    Journal Article

    Zheng D, Deng H, Si S, Yu J, Yang P, Chu J H
    Modified microstructure, magnetic and ferroelectric properties in narrow bandgap Bi0. 5Na0. 5Ti1-xCoxO3 ceramics
    Materials Science Engineering: B, 2022, 277: 115590.

    | 标签: 传感器

    Journal Article

    Huo L, Jin C, Jiang K, Bao Q, Hu Z, Chu J H
    Applications of nickel‐based electrocatalysts for hydrogen evolution reaction
    Advanced Energy Sustainability Research, 2022, 3: 2100189.

    | 标签: 传感器

    Journal Article

    Cui A, Ye Y, Dai K, Li Y, Zhu L, Jiang K, Shang L, Xu G, Hu Z, Zhang S, Chu J H
    Designing monoclinic heterophase coexistence for the enhanced piezoelectric performance in ternary lead-based relaxor ferroelectrics
    ACS applied materials interfaces, 2022, 14: 10535-10545.

    | 标签: 传感器

    Journal Article

    Tai X, Chen Y, Wu S, Jiao H, Cui Z, Zhao D, Huang X, Zhao Q, Wang X, Lin T, Chu J H
    High-performance ReS 2 photodetectors enhanced by a ferroelectric field and strain field
    RSC advances, 2022, 12: 4939-4945.

    | 标签: 传感器

    Journal Article

    Zhang Y, Li G, Hou G, Lin J, Chen M, Liu S, Lin H, Fang J, Jing C, Chu J H
    Multidentate ligand passivation enabled enhanced photoluminescence and stability of CsPbBr3 nanocrystals for white light-emitting diodes
    Chemical Engineering Journal, 2022, 438: 135270.

    | 标签: 传感器

    Journal Article

    Lin J, Li G, She C, Zhang Y, Liu S, Jing C, Cheng Y, Chu J H
    Microchannel tube NH3 sensor based on metal-organic framework UiO-66 modified polyaniline
    Materials Research Bulletin, 2022, 150: 111770.

    | 标签: 传感器

    Journal Article

    Yang J, Du S, Ao L, Zhang J, Jin C, Han M, Jiang K, Shang L, Li Y, Zhang J, Chu J H
    Embedded Double One‐Dimensional Composites of WO3@ N‐Doped Carbon Nanofibers for Superior and Stabilized Lithium Storage
    ChemElectroChem, 2022, 9: e202101477.

    | 标签: 传感器

    Journal Article

    Lu D, Huang F, Gao C, Yang J, Guo J, Hu Y, Bao Q, Noh Y Y, Chu J H, Li W
    Pursuing high‐performance organic field‐effect transistors through organic salt doping
    Advanced Functional Materials, 2022, 32: 2111285.

    | 标签: 传感器

    Journal Article

    Guan Z, Zhao Y, Wang X, Zhong N, Deng X, Zheng Y, Wang J, Xu D, Ma R, Yue F, Chen Y, Huang R, Xiang P, Wei Z, Chu J H, Duan C
    Electric-field-induced room-temperature antiferroelectric–ferroelectric phase transition in van der Waals layered GeSe
    ACS nano, 2022, 16: 1308-1317.

    | 标签: 传感器

    Journal Article

    Luo C, Xu T, Yu Z, Wang X, Sun L, Chu J H, Wu X
    Probing gate dielectrics for two-dimensional electronics at atomistic scale using transmission electron microscope
    IEEE Transactions on Electron Devices, 2022, 70: 1499-1508.

    | 标签: 传感器

    Journal Article

    Zhao F, Guo Y, Yang P, Tao J, Jiang J, Chu J H
    Influence of Amorphous Nb2o5 Electron Transport Layer on the Photoelectric Performance of All-Inorganic Lead-Free Antimony-Based Perovskite-Inspired Solar Cells
    Available at SSRN 4240558,

    | 标签: 传感器

    Journal Article

    Zhang J, Cao H, Bai W, Zhao D, Chen Y, Wang X, Yang J, Zhang Y, Qi R, Huang R, Tang X, Wang J, Chu J H
    High-sensitive CdTe Phototransistor with Response Spectrum Extended to 1.65 µm
    Journal of Materials Chemistry A, 2018, 6: 4883-5230.

    | 标签: 传感器

    Journal Article

    Zhang X, Qi R, Yang S, Peng H, Sun L, Xiang P, Yang P, Yue F, Chu J H
    Bandgap narrowing and ferroic modulation in KNbO3 ceramics composited by spinel AFe2O4 (A= Mg, Zn, Ni, Co)
    Journal of Alloys Compounds, 2022, 918: 165624.

    | 标签: 传感器

    Journal Article

    Liu S, Xie G, Li G, Yu S, Lu X, Liu S, Yue F, Jing C, Chu J H
    A robust PEEK/silver-coated hollow waveguide for terahertz bendable transmission in hot and cold environments
    Results in Physics, 2022, 35: 105395.

    | 标签: 传感器

    Journal Article

    Zhang Q, Xiong H, Wang Q, Xu L, Deng M, Zhang J, Fuchs D, Li W, Shang L, Li Y, Chu J H
    Tunable multi‐bit nonvolatile memory based on ferroelectric field‐effect transistors
    Advanced Electronic Materials, 2022, 8: 2101189.

    | 标签: 传感器

    Journal Article

    Chen J, Deng H, Pan Y, Zheng D, Sun L, Tao J, Yang P, Chu J H
    Band gap modulation and improved magnetism of double perovskite Sr2KMoO6 (K= Fe, Co, Ni, Mn) doped BaTiO3 ceramics
    Ceramics International, 2022, 48: 7629-7635.

    | 标签: 传感器

    Journal Article

    Zhang J, Han M, Ao L, Yang J, Gao L, Jiang K, Shang L, Zhang J, Li Y, Hu Z, Chu J H
    Structural, Electronic Band Transition and Optoelectronic Properties of p-Type Transparent Conductive CuCr1–x Ni x O2 Semiconductor Films
    The Journal of Physical Chemistry C, 2021, 125: 26139-26149.

    | 标签: 传感器

    Journal Article

    Pan Y, Deng H, Zheng D, Chen J, Zhong Y, Tao J, Yang P, Chu J H
    Co-electrodeposition of Cu 3 BiS 3 thin films in weakly alkaline aqueous solutions for photovoltaic application
    Journal of Materials Science: Materials in Electronics, 2022, 1-11.

    | 标签: 传感器

    Journal Article

    Li G, Zhang Y, Lin J, Xu X, Liu S, Fang J, Jing C, Chu J H
    Anomalous NH3-Induced Resistance Enhancement in Halide Perovskite MAPbI3 Film and Gas Sensing Performance
    The journal of physical chemistry letters, 2021, 12: 11339-11345.

    | 标签: 传感器

    Journal Article

    Shen J, Guo Y, Zuo S, Shi F, Jiang J, Chu J H
    A bioinspired porous-designed hydrogel@ polyurethane sponge piezoresistive sensor for human–machine interfacing
    Nanoscale, 2021, 13: 19155-19164.

    | 标签: 传感器

    Journal Article

    Shen Y, Li G, Xie G, She C, Jing C, Chu J H
    Integration of blue–green electroluminescence structure in mid-infrared hollow optical fiber for targeting invisible CO2 laser beam
    Optical Quantum Electronics, 2022, 54: 587.

    | 标签: 传感器

    Journal Article

    Zhao K, Zou J, Huang F, Tian T, Shao Z, Tian W, Chu J H, Li W
    High-Detectivity and Stable Planar MAPbI₃/IDT-BT Photodetectors With Assisted MoO₃ Interlayer
    IEEE Transactions on Electron Devices, 2021, 68: 6266-6272.

    | 标签: 传感器

    Journal Article

    Dai K, Cui A, Ye Y, Jiang K, Zhang J, Li Y, Wang G, Dong X, Hu Z, Chu J H
    Phase diagram with an antiferroelectric/ferroelectric phase boundary in AgNbO 3-LiTaO 3 energy-storage ceramics by lattice dynamics and electronic transitions
    Physical Review B, 2021, 104: 174104.

    | 标签: 传感器

    Journal Article

    Sun J, Dai K, Xia W, Chen J, Jiang K, Li Y, Zhang J, Zhu L, Shang L, Hu Z, Chu J H
    Thermal Conductivity of Large-Area Polycrystalline MoSe2 Films Grown by Chemical Vapor Deposition
    ACS omega, 2021, 6: 30526-30533.

    | 标签: 传感器

    Journal Article

    Zhao F, Zhou J, Tao J, Guo Y, Jiang J, Chu J
    Enhancing photovoltaic performance of carbon-based planar Cs3Sb2I9-xClx solar cells by using P3HT as hole transport material
    Journal of Alloys Compounds, 2022, 897: 162741.

    | 标签: 传感器

    Journal Article

    Ao L, Du S, Yang J, Jin C, Jiang K, Shang L, Li Y, Zhang J, Zhu L, Hu Z, Chu J H
    A novel composite of SnOx nanoparticles and SiO2@ N-doped carbon nanofibers with durable lifespan for diffusion-controlled lithium storage
    Journal of Alloys Compounds, 2022, 897: 162703.

    | 标签: 传感器

    Journal Article

    Gao L, Zhou B, Zhang J, Jiang K, Shang L, Hu Z, Chu J H
    Strain and electric field tunable electronic and optical properties in antimonene/C3N van der Waals heterostructure
    Solid State Sciences, 2021, 122: 106771.

    | 标签: 传感器

    Journal Article

    Zhang X, Shi Y, Dho J, Kwon D, Kim B G, Park S, Jung M-H, Kwon H, Hwang J, Park G, Xing H Z, Lin T, Meng X, Huang Z, Zhu X T, Bai W, Chu J H
    Functionalities enhancement by an anisotropic strain competition
    Ferroelectrics, 2021, 583: 264-277.

    | 标签: 传感器

    Journal Article

    Xu L, Xiong H, Fu Z, Deng M, Wang S, Zhang J, Shang L, Jiang K, Li Y, Zhu L, He L, Hu Z, Chu J H
    High conductance margin for efficient neuromorphic computing enabled by stacking nonvolatile van der Waals transistors
    Physical Review Applied, 2021, 16: 044049.

    | 标签: 传感器

    Journal Article

    Xiong H, Xu L, Gao C, Zhang Q, Deng M, Wang Q, Zhang J, Fuchs D, Li W, Cui A, Chu J H
    Optically modulated HfS2-based synapses for artificial vision systems
    ACS applied materials interfaces, 2021, 13: 50132-50140.

    | 标签: 传感器

    Journal Article

    Liu X, Yang X, Sang W, Huang H, Li W, Lin Y-F, Chu J H
    Thin-film electronics based on all-2D van der Waals heterostructures
    Journal of Information Display, 2021, 22: 231-245.

    | 标签: 传感器

    Journal Article

    Yao S, Shen J, Guo Y, Zuo S, Shi F, Jiang J, Chu J H
    Poly (vinyl alcohol)/phosphoric acid gel electrolyte@ polydimethylsiloxane sponge for piezoresistive pressure sensors
    Journal of Materials Chemistry B, 2021, 9: 8676-8685.

    | 标签: 传感器

    Journal Article

    Tang, Luping; Zhang, Yangyang; Liao, Chen; He, Longbing; Wu, Xing; Liu, Yiwei; Sun, Litao
    Eye-Resolvable Surface-Plasmon-Enhanced Fluorescence Temperature Sensor
    In: Nanomaterials, vol. 12, iss. 22, 2022, ISSN: 2079-4991.

    Links | BibTeX | 标签: 传感器


    @article{nokey,
    title = {Eye-Resolvable Surface-Plasmon-Enhanced Fluorescence Temperature Sensor},
    author = {Luping Tang and Yangyang Zhang and Chen Liao and Longbing He and Xing Wu and Yiwei Liu and Litao Sun },
    url = {https://www.mdpi.com/2079-4991/12/22/4019},
    doi = {10.3390/nano12224019},
    issn = {2079-4991},
    year = {2022},
    date = {2022-11-16},
    urldate = {2022-11-16},
    journal = {Nanomaterials},
    volume = {12},
    issue = {22},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Chen, Yixuan; Wu, Xinyue; Shen, Junhao; Huang, Zepeng; Wang, Zhongrui; Lyu, Liangjian; Bi, Hengchang; Wu, Xing; Shen, Guozhen
    Review of the Intelligent Sensor-Memory-Control Fusion Systems Journal
    In: Advanced Sensor Research, 2022.

    Links | BibTeX | 标签: 传感器


    @article{nokey,
    title = {Review of the Intelligent Sensor-Memory-Control Fusion Systems Journal},
    author = {Yixuan Chen and Xinyue Wu and Junhao Shen and Zepeng Huang and Zhongrui Wang and Liangjian Lyu and Hengchang Bi and Xing Wu and Guozhen Shen},
    doi = {10.1002/adsr.202200034},
    year = {2022},
    date = {2022-11-13},
    urldate = {2022-11-13},
    journal = {Advanced Sensor Research},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Luo, Chen; Xu, Tao; Yu, Zhihao; Wang, Xinran; Sun, Litao; Chu, Junhao; Wu, Xing
    Probing Gate Dielectrics for Two-dimensional Electronics at Atomistic Scale Using Transmission Electron Microscopy
    In: IEEE Transactions on Electron Devices, 2022, ISBN: 0018-9383.

    Links | BibTeX | 标签: 原位电镜 可靠性


    @article{nokey,
    title = {Probing Gate Dielectrics for Two-dimensional Electronics at Atomistic Scale Using Transmission Electron Microscopy},
    author = {Chen Luo and Tao Xu and Zhihao Yu and Xinran Wang and Litao Sun and Junhao Chu and Xing Wu},
    doi = {10.1109/TED.2022.3220729},
    isbn = {0018-9383},
    year = {2022},
    date = {2022-11-10},
    urldate = {2022-11-10},
    journal = {IEEE Transactions on Electron Devices},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Ding, Xuyin; Zhang, Yecheng; Zhang, Yue; Ding, Xufa; Zhang, Hanxin; Cao, Tian; Qu, Zhi-bei; Ren, Jing; Li, Lei; Guo, Zhijun; Xu, Feng; Wang, Qi-Xian; Wu, Xing; Shi, Guoyue; Haick, Hossam; Zhang, Min
    Modular Assembly of MXene Frameworks for Noninvasive Disease Diagnosis via Urinary Volatiles
    In: ACS Nano, pp. 17376–17388, 2022, ISSN: 1936-0851.

    Links | BibTeX | 标签: 传感器


    @article{nokey,
    title = {Modular Assembly of MXene Frameworks for Noninvasive Disease Diagnosis via Urinary Volatiles},
    author = {Xuyin Ding and Yecheng Zhang and Yue Zhang and Xufa Ding and Hanxin Zhang and Tian Cao and Zhi-bei Qu and Jing Ren and Lei Li and Zhijun Guo and Feng Xu and Qi-Xian Wang and Xing Wu and Guoyue Shi and Hossam Haick and Min Zhang
    
    
    
    },
    url = {https://pubs.acs.org/doi/10.1021/acsnano.2c08266},
    doi = {10.1021/acsnano.2c08266},
    issn = {1936-0851},
    year  = {2022},
    date = {2022-10-13},
    urldate = {2022-10-13},
    journal = {ACS Nano},
    pages = {17376–17388},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Luo, Chen; Dong, Zuoyuan; Xu, Tao; Yang, Xin; Zhang, Hui; Bi, Hengchang; Wang, Chaolun; Sun, Litao; Chu, Junhao; Wu, Xing
    Tailoring the Phase Transition of Silver Selenide at The Atomistic Scale
    In: Nanoscale, 2022, ISSN: 2040-3372.

    Links | BibTeX | 标签: 原位电镜 可靠性


    @article{nokey,
    title = {Tailoring the Phase Transition of Silver Selenide at The Atomistic Scale},
    author = {Chen Luo and Zuoyuan Dong and Tao Xu and Xin Yang and Hui Zhang and Hengchang Bi and Chaolun Wang and Litao Sun and Junhao Chu and Xing Wu },
    url = {https://pubs.rsc.org/en/content/articlelanding/2022/nr/d2nr04248g/unauth},
    doi = {10.1039/D2NR04248G},
    issn = {2040-3372},
    year = {2022},
    date = {2022-08-31},
    urldate = {2022-08-31},
    journal = {Nanoscale},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Cheng, Zhiheng; Wang, Chaolun; Wu, Xing; Chu, Junhao
    Review In Situ Transmission Electron Microscope with Machine Learning
    In: Journal of Semiconductors, vol. 43, iss. 8, no. 081001, pp. 1-15, 2022, ISSN: 1674-4926.

    Links | BibTeX | 标签: 原位电镜 可靠性


    @article{nokey,
    title = {Review In Situ Transmission Electron Microscope with Machine Learning},
    author = {Zhiheng Cheng and Chaolun Wang and Xing Wu and Junhao Chu},
    doi = {10.1088/1674-4926/43/8/081001},
    issn = {1674-4926},
    year = {2022},
    date = {2022-08-01},
    urldate = {2022-08-01},
    journal = {Journal of Semiconductors},
    volume = {43},
    number = {081001},
    issue = {8},
    pages = {1-15},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Luo, Zewei; Huang, Zepeng; Liu, Xingchi; Ye, Changqing; Luo, Chen; Wang, Chaolun; Cai, Chunhua; Lv, Liangjian; Bi, Hengchang; Chu, Junhao; Wu, Xing; Shen, Guozhen
    Self-Adaptive Hierarchical Gradient Structure-Based In Situ Sensor with High-Pressure Resolutio
    In: Advanced Materials Technologies, pp. 1-10, 2022, ISSN: 2365-709X.

    Links | BibTeX | 标签: 传感器 石墨烯


    @article{nokey,
    title = {Self-Adaptive Hierarchical Gradient Structure-Based In Situ Sensor with High-Pressure Resolutio},
    author = {Zewei Luo and Zepeng Huang and Xingchi Liu and Changqing Ye and Chen Luo and Chaolun Wang and Chunhua Cai and Liangjian Lv and Hengchang Bi and Junhao Chu and Xing Wu and Guozhen Shen},
    doi = {10.1002/admt.202200848},
    issn = {2365-709X},
    year  = {2022},
    date = {2022-07-27},
    urldate = {2022-07-27},
    journal = {Advanced Materials Technologies},
    pages = {1-10},
    keywords = {传感器, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }



    Conference

    Yang, Xin; Xue, Yongkang; Dong, Zuoyuan; Wang, Chaoluo; Ji, Zhigang; Tsai, Chihang; Wu, Yongren; Yu, Weisong; Wang, Runsheng; Wu*, Xing
    Interconnection Reliability on FinFET Devices
    IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA) 2022.

    BibTeX | 标签: 原位电镜 可靠性


    @conference{NOKEY,
    title = {Interconnection Reliability on FinFET Devices},
    author = {Xin Yang and Yongkang Xue and Zuoyuan Dong and Chaoluo Wang and Zhigang Ji and Chihang Tsai and Yongren Wu and Weisong Yu and Runsheng Wang and Xing Wu*},
    year = {2022},
    date = {2022-07-18},
    urldate = {2022-07-18},
    organization = {IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA)},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }



    Conference

    Qiao, Yuchong; Wu, Xinyue; Wang, Chaolun; Li, Z. B.; Wu*, Xing
    Reliability Study of Hydrogel-Based Flexible Supercapacitor
    IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA) 2022.

    BibTeX | 标签: 传感器 可靠性 石墨烯


    @conference{NOKEY,
    title = {Reliability Study of Hydrogel-Based Flexible Supercapacitor},
    author = {Yuchong Qiao and Xinyue Wu and Chaolun Wang and Z.B. Li and Xing Wu*},
    year = {2022},
    date = {2022-07-18},
    urldate = {2022-07-18},
    organization = {IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA)},
    keywords = {传感器, 可靠性, 石墨烯},
    pubstate = {published},
    tppubtype = {conference}
    }



    Conference

    Huang, Zepeng; Luo, Zewei; Lyu, Liangjian; Wu, Xing
    An in Situ Embedded System for Electrocardiography and Photoplethysmography Acquisition
    International Conference on Electronics Technology (ICET) 2022.

    BibTeX | 标签: 传感器 芯片设计


    @conference{nokey,
    title = {An in Situ Embedded System for Electrocardiography and Photoplethysmography Acquisition},
    author = {Zepeng Huang and Zewei Luo and Liangjian Lyu and Xing Wu},
    year = {2022},
    date = {2022-07-14},
    organization = {International Conference on Electronics Technology (ICET)},
    keywords = {传感器, 芯片设计},
    pubstate = {published},
    tppubtype = {conference}
    }



    Journal Article

    Geng, Xiangshun; Zhang, Peigen; Ren, Jun; Dun, Guan-Hua; Li, Yuanyuan; Jin, Jialun; Wang, Chaolun; Wu, Xing; Xie, Dan; Tian, He; Yang, Yi; Ren, Tian-Ling
    Directly Integrated Mixed-dimensional Van der Waals Graphene/Perovskite Heterojunction for Fast Photodetection
    In: InfoMat, pp. 1-11, 2022, ISSN: 2567-3165.

    Links | BibTeX | 标签: 传感器 石墨烯


    @article{nokey,
    title = {Directly Integrated Mixed-dimensional Van der Waals Graphene/Perovskite Heterojunction for Fast Photodetection},
    author = {Xiangshun Geng and Peigen Zhang and Jun Ren and Guan-Hua Dun and Yuanyuan Li and Jialun Jin and Chaolun Wang and Xing Wu and Dan Xie and He Tian and Yi Yang and Tian-Ling Ren},
    editor = { },
    doi = {doi.org/10.1002/inf2.12347},
    issn = {2567-3165},
    year = {2022},
    date = {2022-07-10},
    urldate = {2022-07-10},
    journal = {InfoMat},
    pages = {1-11},
    keywords = {传感器, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Wang, Yalan; Zhang, Miao; Panlin Li and, Xinqian Chen; Xue, Zhongying; Wu, Xing; Di, Zengfeng
    Structural Properties of Grain Boundary in Graphene Grown on Germanium Substrates with Different Orientations
    In: Appl. Phys. Lett. , vol. 121, iss. 1, no. 011901, pp. 1-6, 2022, ISSN: 0003-6951.

    Links | BibTeX | 标签: 原位电镜 石墨烯


    @article{nokey,
    title = {Structural Properties of Grain Boundary in Graphene Grown on Germanium Substrates with Different Orientations},
    author = {Yalan Wang and Miao Zhang and Panlin Li and, Xinqian Chen and Zhongying Xue and Xing Wu and Zengfeng Di},
    doi = {10.1063/5.0099263},
    issn = {0003-6951},
    year = {2022},
    date = {2022-07-07},
    urldate = {2022-07-07},
    journal = {Appl. Phys. Lett. },
    volume = {121},
    number = { 011901},
    issue = {1},
    pages = {1-6},
    keywords = {原位电镜, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Wang, Shuying; Huang, Haizhou; Liu, Cheng; Xia, Yuyan; Ye, Changqing; Luo, Zewei; Cai, Chunhua; Wang, Chaolun; Lyu, Liangjian; Hengchang Bi, Xing Wu; Sun, Litao
    Waterproof and Breathable Graphene-Based Electronic Fabric for Wearable Sensors
    In: Adv. Mater. Technol, vol. 2200149, iss. 2200149, pp. 1-8, 2022, ISSN: 2365-709X.

    Links | BibTeX | 标签: 传感器 石墨烯


    @article{nokey,
    title = {Waterproof and Breathable Graphene-Based Electronic Fabric for Wearable Sensors},
    author = {Shuying Wang and Haizhou Huang and Cheng Liu and Yuyan Xia and Changqing Ye and Zewei Luo and Chunhua Cai and Chaolun Wang and Liangjian Lyu and Hengchang Bi,Xing Wu and Litao Sun},
    doi = { 10.1002/admt.202200149},
    issn = {2365-709X},
    year = {2022},
    date = {2022-06-28},
    urldate = {2022-06-28},
    journal = {Adv. Mater. Technol},
    volume = {2200149},
    issue = {2200149},
    pages = {1-8},
    keywords = {传感器, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Chen, Lei; Yao, Xingye; Liu, Xingchi; Luo, Zewei; Ye, Changqing; Huang, Chengfeng; Wang, Chaolun; Cai, Chunhua; Lyu, Liangjian; Wu, Xing; Bi, Hengchang
    High Throughput In–Situ Temperature Sensor Array with High Sensitivity and Excellent Linearity for Wireless Body Temperature Monitoring
    In: Small Struct., iss. 2200080, pp. 1-8, 2022, ISSN: 2688-4062.

    Links | BibTeX | 标签: 传感器 石墨烯


    @article{nokey,
    title = {High Throughput In–Situ Temperature Sensor Array with High Sensitivity and Excellent Linearity for Wireless Body Temperature Monitoring},
    author = {Lei Chen and Xingye Yao and Xingchi Liu and Zewei Luo and Changqing Ye and Chengfeng Huang and Chaolun Wang and Chunhua Cai and Liangjian Lyu and Xing Wu and Hengchang Bi},
    doi = {10.1002/sstr.202200080},
    issn = {2688-4062},
    year = {2022},
    date = {2022-06-11},
    urldate = {2022-06-11},
    journal = {Small Struct.},
    issue = {2200080},
    pages = {1-8},
    keywords = {传感器, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Luo, Chen; Yu, Zhihao; Ning, Hongkai; Dong, Zuoyuan; Wang, Chaolun; Sun, Litao; Wu, Xing; Wang, Xinran; and Junhao Chu,
    Enhancement of the Ferroelectricity by Interface Engineering Observed by In Situ Transmission Electron Microscope
    In: Applied Physics Letters, 2022, ISSN: 0003-6951.

    Links | BibTeX | 标签: 原位电镜 可靠性


    @article{nokey,
    title = {Enhancement of the Ferroelectricity by Interface Engineering Observed by In Situ Transmission Electron Microscope},
    author = {Chen Luo and Zhihao Yu and Hongkai Ning and Zuoyuan Dong and Chaolun Wang and Litao Sun and Xing Wu and Xinran Wang and and Junhao Chu},
    doi = {10.1063/5.0087715},
    issn = {0003-6951},
    year = {2022},
    date = {2022-06-02},
    urldate = {2022-06-02},
    journal = {Applied Physics Letters},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Zhang, Yewei; Wang, Chaolun; Wu, Xing
    Review of Electrical Stimulus Methods of In Situ Transmission Electron Microscope to Study Resistive Random Access Memory
    In: Nanoscale, 2022, ISBN: 2040-3364.

    Links | BibTeX | 标签: 传感器 原位电镜 可靠性


    @article{nokey,
    title = {Review of Electrical Stimulus Methods of In Situ Transmission Electron Microscope to Study Resistive Random Access Memory},
    author = {Yewei Zhang and Chaolun Wang and Xing Wu },
    doi = {10.1039/D2NR01872A},
    isbn = {2040-3364},
    year = {2022},
    date = {2022-06-02},
    urldate = {2022-06-02},
    journal = {Nanoscale},
    keywords = {传感器, 原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }



    Conference

    Luo, Chen; Wang, Chaolun; Ma, Shuo; Liang, Fang; Luo, Zewei; Wu*, Xing; Chu, Junhao
    In Situ Transmission Electron Microscope Study of Reliability in Molybdenum Disulfide Based Strain Sensors
    vol. 120, no. 23, IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA) 2022.

    BibTeX | 标签: 传感器 原位电镜


    @conference{NOKEY,
    title = {In Situ Transmission Electron Microscope Study of Reliability in Molybdenum Disulfide Based Strain Sensors},
    author = {Chen Luo and Chaolun Wang and Shuo Ma and Fang Liang and Zewei Luo and Xing Wu* and Junhao Chu},
    year = {2022},
    date = {2022-06-02},
    urldate = {2022-06-02},
    volume = {120},
    number = {23},
    organization = {IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA)},
    keywords = {传感器, 原位电镜},
    pubstate = {published},
    tppubtype = {conference}
    }



    Journal Article

    Wangxu, Haohan; Lyu, Liangjian; Bi, Hengchang; Wu, Xing
    Flexible Pressure Sensor Array with Multi-Channel Wireless Readout Chip
    In: Sensors, vol. 22, iss. 10, pp. 1-9, 2022, ISSN: 1424-8220 .

    Links | BibTeX | 标签: 传感器


    @article{nokey,
    title = {Flexible Pressure Sensor Array with Multi-Channel Wireless Readout Chip},
    author = {Haohan Wangxu and Liangjian Lyu and Hengchang Bi and Xing Wu },
    doi = {10.3390/s22103934},
    issn = {1424-8220 },
    year = {2022},
    date = {2022-05-23},
    urldate = {2022-05-23},
    journal = {Sensors},
    volume = {22},
    issue = {10},
    pages = {1-9},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Shen, Yang; Dong, Zuoyuan; Sun, Yabin; Guo, Hao; Wu, Fan; Li, Xianglong; Tang, Jun; Liu, Jun; Wu, Xing; Tian, He; Ren, Tian-Ling
    The Trend of 2D Transistors Toward Integrated Circuits: Scaling Down and New Mechanisms
    In: Adv. Mater., 2022, ISSN: 0935-9648.

    Links | BibTeX | 标签: 传感器 石墨烯


    @article{nokey,
    title = {The Trend of 2D Transistors Toward Integrated Circuits: Scaling Down and New Mechanisms},
    author = {Yang Shen and Zuoyuan Dong and Yabin Sun and Hao Guo and Fan Wu and Xianglong Li and Jun Tang and Jun Liu and Xing Wu and He Tian and Tian-Ling Ren},
    doi = {10.1002/adma.202201916},
    issn = {0935-9648},
    year = {2022},
    date = {2022-05-10},
    urldate = {2022-05-10},
    journal = { Adv. Mater.},
    keywords = {传感器, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Xiaojiao, Guo; Honglei, Chen; Jihong, Bian; Fuyou, Liao; Jingyi, Ma; Simeng, Zhang; Xinzhi, Zhang; Junqiang, Zhu; Chen, Luo; Zijian, Zhang; Lingyi, Zong; Yin, Xia; Chuming, Sheng; Zihan, Xu; Saifei, Gou; Xinyu, Wang; Peng, Gong; Liwei, Liu; Xixi, Jiang; Zhenghua, An; Chunxiao, Cong; Zhijun, Qiu; Xing, Wu; Peng, Zhou; Xinyu, Chen; Ling, Tong; Wenzhong, Bao
    Stacking Monolayers at will: A Scalable Device Optimization Strategy for Two-dimensional Semiconductor
    In: NANO RES, pp. 1-8, 2022, ISSN: 1998-0124.

    Links | BibTeX | 标签: 传感器


    @article{,
    title = {Stacking Monolayers at will: A Scalable Device Optimization Strategy for Two-dimensional Semiconductor},
    author = {Xiaojiao, Guo and Honglei, Chen and Jihong, Bian and Fuyou, Liao and Jingyi, Ma and Simeng, Zhang and Xinzhi, Zhang and Junqiang, Zhu and Chen, Luo and Zijian, Zhang and Lingyi, Zong and Yin, Xia and Chuming, Sheng and Zihan, Xu and Saifei, Gou and Xinyu, Wang and Peng, Gong and Liwei, Liu and Xixi, Jiang and Zhenghua, An and Chunxiao, Cong and Zhijun, Qiu and Xing, Wu and Peng, Zhou and Xinyu, Chen and Ling, Tong and Wenzhong, Bao},
    doi = {10.1007/s12274-022-4280-z},
    issn = {1998-0124},
    year = {2022},
    date = {2022-05-05},
    urldate = {2022-05-05},
    journal = {NANO RES},
    pages = {1-8},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Dong, Zuo Yuan; Zhou, Yan; Chen, Xin-Qian; Li, Wei-Jian; Cao, Zi-Yu; Luo, Chen; Zhong, Guo-Hua; Peng, Qing; Wu∗, Xing; Che∗, Xiao-Jia
    Effect of Low-Frequency Optical Phonons on the Thermal Conductivity of 2H Molybdenum Disulfide
    In:  Physical Review B , vol. 105, iss. 184301 , 2022.

    Links | BibTeX | 标签: 传感器 原位电镜


    @article{NOKEYt,
    title = {Effect of Low-Frequency Optical Phonons on the Thermal Conductivity of 2H Molybdenum Disulfide},
    author = {Zuo Yuan Dong and Yan Zhou and Xin-Qian Chen and Wei-Jian Li and Zi-Yu Cao and Chen Luo and Guo-Hua Zhong and Qing Peng and Xing Wu∗ and Xiao-Jia Che∗},
    doi = {10.1103/PhysRevB.105.184301},
    year = {2022},
    date = {2022-05-03},
    urldate = {2022-05-03},
    journal = { Physical Review B },
    volume = {105},
    issue = {184301 },
    keywords = {传感器, 原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Ma, Jingyi; Chen, Xinyu; Sheng, Yaochen; Tong, Ling; Guo, Xiaojiao; Zhang, Minxing; Luo, Chen; Zong, Lingyi; Xia, Yin; Sheng, Chuming; Wang, Yin; Gou, Saifei; Wang, Xinyu; Wu, Xing; Zhou, Peng; Zhang, David Wei; Wu, Chenjian; Bao, Wenzhong
    Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors
    In: Journal of Materials Science & Technology, vol. 106, pp. 243-248, 2022, ISSN: 1005-0302 .

    Links | BibTeX | 标签: 传感器 原位电镜


    @article{nokey,
    title = {Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors},
    author = {Jingyi Ma and Xinyu Chen and Yaochen Sheng and Ling Tong and Xiaojiao Guo and Minxing Zhang and Chen Luo and Lingyi Zong and Yin Xia and Chuming Sheng and Yin Wang and Saifei Gou and Xinyu Wang and Xing Wu and Peng Zhou and David Wei Zhang and Chenjian Wu and Wenzhong Bao},
    doi = {10.1016/j.jmst.2021.08.021},
    issn = {1005-0302 },
    year = {2022},
    date = {2022-04-20},
    urldate = {2022-04-20},
    journal = { Journal of Materials Science & Technology},
    volume = {106},
    pages = {243-248},
    keywords = {传感器, 原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Wang, Yalan; Zhang, Miao; Xue, Zhongying; Chen, Xinqian; Mei, Yongfeng; Chu, Paul K.; Tian, Ziao; Wu*, Xing; Di*, Zengfeng
    Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors
    In: Small, vol. 2200913, 2022.

    Links | BibTeX | 标签: 传感器 原位电镜


    @article{NOKEYr,
    title = {Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors},
    author = {Yalan Wang and Miao Zhang and Zhongying Xue and Xinqian Chen and Yongfeng Mei and Paul K. Chu and Ziao Tian and Xing Wu* and Zengfeng Di*},
    doi = {10.1002/smll.202200913},
    year = {2022},
    date = {2022-04-11},
    urldate = {2022-04-11},
    journal = {Small},
    volume = {2200913},
    keywords = {传感器, 原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Liu, Xingchi; Huang, Zepeng; Ye, Changqing; Luo, Zewei; Chen, Lei; Yao, Xingye; Liang, Fang; Yang, Tao; Bi*, Hengchang; Wang, Chaolun; Cai, Chunhua; Lyu, Liangjian; Wu*, Xing
    Graphene-Based Hydrogel Strain Sensors with Excellent Breathability for Motion Detection and Communication
    In: Macromolecular Materials Engineering, vol. 2200001, 2022.

    Links | BibTeX | 标签: 传感器 石墨烯


    @article{NOKEYs,
    title = {Graphene-Based Hydrogel Strain Sensors with Excellent Breathability for Motion Detection and Communication},
    author = { Xingchi Liu and Zepeng Huang and Changqing Ye and Zewei Luo and Lei Chen and Xingye Yao and Fang Liang and Tao Yang and Hengchang Bi* and Chaolun Wang and Chunhua Cai and Liangjian Lyu and Xing Wu*},
    doi = {10.1002/mame.202200001},
    year = {2022},
    date = {2022-04-09},
    urldate = {2022-04-09},
    journal = {Macromolecular Materials Engineering},
    volume = {2200001},
    keywords = {传感器, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Zhang, Zijian; Wang, Wanting; Dong, Zuoyuan; Yang, Xin; Liang, Fang; Chen, Xinqian; Wang*, Chaolun; Luo, Chen; Zhang, Jiayan; Wu*, Xing; Sun, Litao; Chu, Junhao
    The Trends of In Situ Focused Ion Beam Technology: Towards Preparing Transmission Electron Microscopy Lamella and Devices at the Atomic Scale
    In: Advanced Electronic Materials, 2022.

    BibTeX | 标签: 原位电镜 可靠性


    @article{NOKEYn,
    title = {The Trends of In Situ Focused Ion Beam Technology: Towards Preparing Transmission Electron Microscopy Lamella and Devices at the Atomic Scale},
    author = {Zijian Zhang and Wanting Wang and Zuoyuan Dong and Xin Yang and Fang Liang and Xinqian Chen and Chaolun Wang* and Chen Luo and Jiayan Zhang and Xing Wu* and Litao Sun and Junhao Chu},
    year = {2022},
    date = {2022-03-30},
    urldate = {2022-03-30},
    journal = {Advanced Electronic Materials},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }



    Conference

    Chen, Xinqian; Hou, Fei; Dong, Zuoyuan; Zhang, Yuxin; Wang, Chaolun; Liang, Fang; Du, Feibo; Liu, Zhiwei; Wu*, Xing
    Nanoscale Analysis of Breakdown Induced Crack Propagation in DTSCR Devices
    IEEE International Reliability Physics Symposium (IRPS) 2022.

    BibTeX | 标签: 原位电镜 可靠性


    @conference{nokey,
    title = {Nanoscale Analysis of Breakdown Induced Crack Propagation in DTSCR Devices},
    author = {Xinqian Chen and Fei Hou and Zuoyuan Dong and Yuxin Zhang and Chaolun Wang and Fang Liang and Feibo Du and Zhiwei Liu and Xing Wu*},
    year = {2022},
    date = {2022-03-27},
    urldate = {2022-03-27},
    organization = {IEEE International Reliability Physics Symposium (IRPS)},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }



    Journal Article

    Gai*, Ling-Yun; Lai, Run-Ping; Dong, Xian-Hui; Wu*, Xing; Luan, Qiao-Tong; Wang, Jue; Lin, Hao-Feng; Ding, Wen-Hao; Wu, Guang-Lei; Xie*, Wan-Feng
    Recent Advances in Ethanol Gas Sensors Based on Metal Oxide Semiconductor Heterojunctions
    In: Rare Metals, 2022.

    Links | BibTeX | 标签: 传感器


    @article{nokey,
    title = {Recent Advances in Ethanol Gas Sensors Based on Metal Oxide Semiconductor Heterojunctions},
    author = {Ling-Yun Gai* and Run-Ping Lai and Xian-Hui Dong and Xing Wu* and Qiao-Tong Luan and Jue Wang and Hao-Feng Lin and Wen-Hao Ding and Guang-Lei Wu and Wan-Feng Xie*},
    doi = {10.1007/s12598-021-01937-4},
    year = {2022},
    date = {2022-03-22},
    urldate = {2022-03-22},
    journal = {Rare Metals},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Gai*, Ling-Yun; Lai, Run-Ping; Dong, Xian-Hui; Wu*, Xing; Luan, Qiao-Tong; Wang, Jue; Lin, Hao-Feng; Ding, Wen-Hao; Wu, Guang-Lei; Xie*, Wan-Feng
    Recent Advances in Ethanol Gas sensors Based on Metal Oxide Semiconductor Heterojunctions
    In: Rare Met., 2022.

    Links | BibTeX


    @article{NOKEYk,
    title = {Recent Advances in Ethanol Gas sensors Based on Metal Oxide Semiconductor Heterojunctions},
    author = {Ling-Yun Gai* and Run-Ping Lai and Xian-Hui Dong and Xing Wu* and Qiao-Tong Luan and Jue Wang and Hao-Feng Lin and Wen-Hao Ding and Guang-Lei Wu and Wan-Feng Xie*},
    doi = {10.1007/s12598-021-01937-4},
    year = {2022},
    date = {2022-03-22},
    journal = {Rare Met.},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Yao, Xingye; Chen, Lei; Luo, Zewei; Ye, Changqing; Liang, Fang; Yang, Tao; Liu, Xingchi; Tian, Xiyue; Bi*, Hengchang; Wang, Chaolun; Cai, Chunhua; Lyu, Liangjian; Wu*, Xing
    High-Performance Flexible Humidity Sensors for Breath Detection and Non-touch Switches
    In: Nano Select, pp. 1-10, 2022.

    Links | BibTeX | 标签: 传感器 石墨烯


    @article{NOKEYm,
    title = {High-Performance Flexible Humidity Sensors for Breath Detection and Non-touch Switches},
    author = {Xingye Yao and Lei Chen and Zewei Luo and Changqing Ye and Fang Liang and Tao Yang and Xingchi Liu and Xiyue Tian and Hengchang Bi* and Chaolun Wang and Chunhua Cai and Liangjian Lyu and Xing Wu*},
    doi = {10.1002/nano.202100343},
    year = {2022},
    date = {2022-03-05},
    urldate = {2022-03-05},
    journal = {Nano Select},
    pages = {1-10},
    keywords = {传感器, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Ma, Jingyi; Chen, Xinyu; Wang, Xinyu; Bian, Jihong; Tong, Ling; Chen, Honglei; Guo, Xiaojiao; Xia, Yin; Zhang, Xinzhi; Xu, Zihan; He, Congrong; Qu, Jialing; Zhou, Peng; Wu*, Chenjian; Wu*, Xing; Bao*, Wenzhong
    Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors
    In: ACS Applied Materials & Interfaces, 2022.

    Links | BibTeX | 标签: 传感器


    @article{NOKEY,
    title = {Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors},
    author = {Jingyi Ma and Xinyu Chen and Xinyu Wang and Jihong Bian and Ling Tong and Honglei Chen and Xiaojiao Guo and Yin Xia and Xinzhi Zhang and Zihan Xu and Congrong He and Jialing Qu and Peng Zhou and Chenjian Wu* and Xing Wu* and Wenzhong Bao*},
    doi = {10.1021/acsami.1c22990},
    year = {2022},
    date = {2022-02-25},
    urldate = {2022-02-25},
    journal = {ACS Applied Materials & Interfaces},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Lyu, LiangJian; Wang, Qingzhen; Huang, Zepeng; Wu, Xing
    An In Situ Digital Background Calibration Algorithm for Multi-channel R-βR ladder DACs
    In: Journal of Electronic Science and Technology, vol. 100150, 2022, ISSN: 51-1724.

    Links | BibTeX | 标签: 原位电镜 芯片设计


    @article{NOKEYg,
    title = {An In Situ Digital Background Calibration Algorithm for Multi-channel R-βR ladder DACs},
    author = {LiangJian Lyu and Qingzhen Wang and Zepeng Huang and Xing Wu},
    doi = {10.1016/j.jnlest.2022.100150},
    issn = {51-1724},
    year = {2022},
    date = {2022-01-13},
    urldate = {2022-01-13},
    journal = {Journal of Electronic Science and Technology},
    volume = {100150},
    keywords = {原位电镜, 芯片设计},
    pubstate = {published},
    tppubtype = {article}
    }



  • 2021

    Journal Article

    Zhou J, Zhao F, Shen J, Zhou Y, Wu Y, Guo Y, Jiang J, Chu J H
    Inorganic lead-free antimony-based perovskite-inspired solar cells with a carbon electrode and green anti-solvent regulation
    Journal of Materials Chemistry C, 2021, 9: 15301-15308.

    | 标签: 传感器

    Journal Article

    Zhou B, Cui A, Gao L, Jiang K, Shang L, Zhang J, Li Y, Gong S-J, Hu Z, Chu J H
    Enhancement effects of interlayer orbital hybridization in Janus MoSSe and tellurene heterostructures for photovoltaic applications
    Physical Review Materials, 2021, 5: 125404.

    | 标签: 传感器

    Journal Article

    Nie Q, Gao C, Yang F-S, Lee K-C, Lin C-Y, Wang X, Ho C-H, Lien C-H, Lin S-P, Li M, Lin Y-F, Li W, Hu Z, Chu J H
    Carrier-capture-assisted optoelectronics based on van der Waals materials to imitate medicine-acting metaplasticity
    npj 2D Materials Applications, 2021, 5: 60.

    | 标签: 传感器

    Journal Article

    Liu S, Xie G, Yu S, Lu X, Jing C, Chu J H
    Fabrication of low-loss polycarbonate tube waveguide for broadband terahertz transmission by controlled polymer solution-coating method
    2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz),IEEE, F, 2021.

    | 标签: 传感器

    Journal Article

    Liu S, Xie G, Yu S, Lu X, Jing C, Chu J H
    Fabrication of low-loss polycarbonate tube waveguide for broadband terahertz transmission by controlled polymer solution-coating method
    2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz),IEEE, F, 2021.

    | 标签: 传感器

    Journal Article

    Ye Y, Cui A, Gao L, Jiang K, Zhu L, Zhang J, Shang L, Li Y, Wang G, Dong X, Hu Z, Chu J H
    In situ Raman scattering studies of pressure-temperature phase diagrams in antiferroelectric xCaSnO3-modified NaNbO3 ceramics
    Applied Physics Letters, 2021, 119:

    | 标签: 传感器

    Journal Article

    Fan T, Liu Z, Tian X, Li J, Yang J, Wang C, Bi H, Qiao F, Wu X, Chu J H
    Object identification with smart glove assembled by pressure sensors
    IEEE Sensors Letters, 2021, 5: 1-4.

    | 标签: 传感器

    Journal Article

    Wu H, Ma C, Zhang J, Cao H, Lin R, Bai W, Pan Z, Yang J, Zhang Y, Chen Y, Chu J H
    High-Performance Photodetectors with an Ultrahigh Photoswitching Ratio and a Very Fast Response Speed in Self-Powered Cu2ZnSnS4/CdS PN Heterojunctions
    ACS Applied Electronic Materials, 2021, 3: 4135-4143.

    | 标签: 传感器

    Journal Article

    Lin J, Shen P, Liu Y, Yue F, Chen Y, Zhou Z, Yang P, Chu J H, Duan C-G, Sun L
    Electric-field modulated photovoltaic effect of ferroelectric double-perovskite Bi2FeMnO6 films
    Applied Physics Letters, 2021, 119:

    | 标签: 传感器

    Journal Article

    Zhang X, Qi R, Dong S, Yang S, Jing C, Sun L, Chen Y, Hong X, Yang P, Yue F, Chu J H
    Modulation of Ferroelectric and Optical Properties of La/Co-Doped KNbO3 Ceramics
    Nanomaterials, 2021, 11: 2273.

    | 标签: 传感器

    Journal Article

    Lu X, Xu B, Qin X, Chen Y, Yang P, Chu J H, Sun L
    Heterojunction post-heat treatment process driving high efficiency for Cu2ZnSnS4 solar cell
    Solar Energy Materials Solar Cells, 2021, 230: 111204.

    | 标签: 传感器

    Journal Article

    Liu S, Xie G, Yu S, Lu X, Jing C, Chu J H
    Fabrication of low-loss polycarbonate tube waveguide for broadband terahertz transmission by controlled polymer solution-coating method
    2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz),IEEE, F, 2021.

    | 标签: 传感器

    Journal Article

    Li G, Huang R, Huang J, Zhang W, Cui H, Xia N, Huang Z, Chu J H, Ma G
    Impact of sulfur doping on broadband terahertz emission in gallium selenide single crystals via optical rectification
    Applied Physics Express, 2021, 14: 072004.

    | 标签: 传感器

    Journal Article

    Xu B, Qin X, Lu X, Liu Y, Chen Y, Peng H, Yang P, Chu J H, Sun L
    Realization of 11.5% Efficiency Cu2ZnSn (S, Se) 4 Thin‐Film Solar Cells by Manipulating the Phase Structure of Precursor Films
    Solar RRL, 2021, 5: 2100216.

    | 标签: 传感器

    Journal Article

    Guo Y, Zhou J, Zhao F, Wu Y, Tao J, Zuo S, Jiang J, Hu Z, Chu J H
    Carbon-based 2D-layered Rb0. 15Cs2. 85Sb2ClxI9− x solar cells with superior open-voltage up to 0.88 V
    Nano Energy, 2021, 88: 106281.

    | 标签: 传感器

    Journal Article

    Li G, Zhang Y, Zhao X, Lin J, She C, Liu S, Jing C, Cheng Y, Chu J H
    Bismuth-based lead-free perovskite film for highly sensitive detection of ammonia gas
    Sensors Actuators B: Chemical, 2021, 345: 130298.

    | 标签: 传感器

    Journal Article


    Yu S, Sun Z, Li G, Xie G, Shen Y, Liu S, Lu X, Liu S, Jing C, Cheng Y, Chu J H
    Construction of a dual-core hollow waveguide for visible and mid-infrared light transmission based on PTFE tubing and UV gel
    Optical Quantum Electronics, 2021, 53: 1-12.

    | 标签: 传感器

    Journal Article

    Pan Y, Hu X, Guo Y, Pan X, Zhao F, Weng G, Tao J, Zhao C, Jiang J, Chen S, Yang P, Chu J H
    Vapor transport deposition of highly efficient Sb2 (S, Se) 3 solar cells via controllable orientation growth
    Advanced Functional Materials, 2021, 31: 2101476.

    | 标签: 传感器

    Journal Article

    Zhang Y, Li G, She C, Liu S, Yue F, Jing C, Cheng Y, Chu J H
    Room temperature preparation of highly stable cesium lead halide perovskite nanocrystals by ligand modification for white light-emitting diodes
    Nano Research, 2021, 14: 2770-2775.

    | 标签: 传感器

    Journal Article

    Wang Y, Li L, Sun Y, Xu J, Jia Y, Hong J, Hu X, Weng G, Luo X, Chen S, Chu J H
    Adaptive automatic solar cell defect detection and classification based on absolute electroluminescence imaging
    Energy, 2021, 229: 120606.

    | 标签: 传感器

    Journal Article

    Zhang C, Zheng D, Hong J, Yang P, Tao J, Chu J H
    Room-temperature ferromagnetism in (K0. 5Na0. 5) NbO3-xBaNi0. 5Nb0. 5O3-δ ferroelectric ceramics with narrow bandgap
    Ceramics International, 2021, 47: 20003-20008.

    | 标签: 传感器

    Journal Article

    Si S, Deng H, Wang T, Yang P, Chu J H
    Modified room‐temperature magnetic and optical properties in bilayer x Bi 6 Fe 2 Ti 3 O 18−(1− x) CoFe 2 O 4 composite thin films
    Journal of Materials Science: Materials in Electronics, 2021, 32: 10320-10328.

    | 标签: 传感器

    Journal Article

    Wu S, Wang X, Jiang W, Tu L, Chen Y, Liu J, Lin T, Shen H, Ge J, Hu W, Chu J H
    Interface engineering of ferroelectric-gated MoS 2 phototransistor
    Science China Information Sciences, 2021, 64: 1-8.

    | 标签: 传感器

    Journal Article

    Zhao D, Chen Y, Jiang W, Wang X, Liu J, Huang X, Han S, Lin T, Shen H, Wang X, Chu J H
    Gate‐Tunable Photodiodes Based on Mixed‐Dimensional Te/MoTe2 Van der Waals Heterojunctions
    Advanced Electronic Materials, 2021, 7: 2001066.

    | 标签: 传感器

    Journal Article

    Yan M, Zhu Q, Wang S, Ren Y, Feng G, Liu L, Peng H, He Y, Wang J, Zhou P J A E M
    Ferroelectric synaptic transistor network for associative memory
    2021, 7: 2001276.

    | 标签: 传感器

    Journal Article

    Huang F, Lu D, Ji Y, Xu Y, Gao C, Wang X, Li W, Chu J H
    Electron injection improvement of n-type organic field-effect transistors with indium contact interlayer
    IEEE Transactions on Electron Devices, 2021, 68: 2440-2446.

    | 标签: 传感器

    Journal Article

    Tong J, Suo F, Zhang T, Huang Z, Chu J H, Zhang D H
    Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection
    Light: Science Applications, 2021, 10: 58.

    | 标签: 传感器

    Journal Article

    Guo Y, Zhao F, Wang X, Tao J, Zheng D, Jiang J, Hu Z, Chu J H
    Multi-source cation/anion doping towards efficient carbon-based CsPbIBr2 solar cells with superior open voltage up to 1.37 V
    Solar Energy Materials Solar Cells, 2021, 221: 110918.

    | 标签: 传感器

    Journal Article

    Jiang W, Wang X, Chen Y, Wu S, Wu B, Yang X, Lin T, Shen H, Meng X, Wu X, Chu J H, Wang J
    End-bonded contacts of tellurium transistors
    ACS applied materials interfaces, 2021, 13: 7766-7772.

    | 标签: 传感器

    Journal Article

    Liu Y, Xu B, Lu X, Qin X, Yang P, Chu J H, Chen Y, Sun L
    Improvement of grain growth and composition distribution of Cu2ZnSn (S, Se) 4 by using chloride-based precursor solution
    Solar Energy, 2021, 215: 451-458.

    | 标签: 传感器

    Journal Article

    Zhao C, Liu J, Guo Y, Pan Y, Hu X, Weng G, Tao J, Jiang J, Chen S, Yang P, Chu J H
    RF magnetron sputtering processed transparent conductive aluminum doped ZnO thin films with excellent optical and electrical properties
    Journal of Materials Science: Materials in Electronics, 2021, 32: 9106-9114.

    | 标签: 传感器

    Journal Article

    Chen J, Deng H, Zheng D, Pan Y, Si S, Zhang Y, Yang P, Chu J H
    Band gap narrowing and electrical properties of (1-x) BaTiO 3-x SrFe 0.5 Nb 0.5 O 3 lead-free ceramics
    Journal of Materials Science: Materials in Electronics, 2021, 32: 10151-10159.

    | 标签: 传感器

    Journal Article

    Li G, She C, Zhang Y, Li H, Liu S, Yue F, Jing C, Cheng Y, Chu J H. A
    “Turn-on” fluorescence perovskite sensor based on MAPbBr3/mesoporous TiO2 for NH3 and amine vapor detections
    Sensors Actuators B: Chemical, 2021, 327: 128918.

    | 标签: 传感器

    Journal Article

    Zhang Y, Li G, Hou G, Lin J, Chen M, Liu S, Lin H, Fang J, Jing C, Chu J H
    Multidentate Ligand Passivated Cspbbr3 Perovskite Nanocrystals with Near-Unity Quantum Yield and Improved Stability for High-Efficiency White Light-Emitting Diodes
    Available at SSRN 3989396, 2022,

    | 标签: 传感器

    Journal Article

    Tang J, Jin C, Huo L, Du S, Xu X, Yan Y, Jiang K, Shang L, Zhang J, Li Y, Chu J H
    Ultrathin Fe–ReS2 Nanosheets as Electrocatalysts for Accelerating Sulfur Reduction in Li–S Batteries
    ACS applied materials interfaces, 2022, 14: 50870-50879.

    | 标签: 传感器

    Journal Article

    Zhang X, Qi R, Dong S, Yang S, Hong X, Peng H, Sun L, Xiang P, Yang P, Yue F, Chu J H
    Ferro-electric and magnetic properties in Bi5 Ti3 FeO15 films by Mn doping
    Journal of Materials Chemistry C, 2022, 10: 1003-1009.

    | 标签: 传感器

    Journal Article

    Liu Y, Lin J, Zhong N, Xiang P-H, Chen Y, Yang P, Chu J H, Duan C-G, Sun L
    Ferroelectric domain structure of Bi2FeCrO6 multiferroic thin films
    Journal of Applied Physics, 2020, 128: 23.

    | 标签: 传感器

    Journal Article

    Chen Y, Wang X, Huang L, Wang X, Jiang W, Wang Z, Wang P, Wu B, Lin T, Shen H, Wei Z, Hu W, Meng X, Chu J H, Wang J
    Ferroelectric-tuned van der Waals heterojunction with band alignment evolution
    Nature communications, 2021, 12: 4030.

    | 标签: 传感器

    Journal Article

    Tian X, Luo Z, Fan T, Zhang J, Chu J H, Wu X
    Printable and flexible planar silver electrodes-based resistive switching sensory array
    Frontiers in Sensors, 2020, 1: 600185.

    | 标签: 传感器

    Journal Article

    Tian X, Luo Z, Fan T, Zhang J, Chu J H, Wu X
    Printable and flexible planar silver electrodes-based resistive switching sensory array
    Frontiers in Sensors, 2020, 1: 600185.

    | 标签: 传感器

    Journal Article

    Lu X, Xu B, Qin X, Chen Y, Yang P, Chu J H, Sun L
    Modification of back contact in Cu2ZnSnS4 solar cell by inserting Al-doped ZnO intermediate layer
    ACS applied materials interfaces, 2020, 12: 58060-58071.

    | 标签: 传感器

    Journal Article

    Weng G, Tian J, Chen S, Yan J, Zhang H, Liu Y, Zhao C, Hu X, Luo X, Tao J, Chu J H
    Electron–hole plasma lasing dynamics in CsPbClmBr3-m microplate lasers
    ACS Photonics, 2020, 8: 787-797.

    | 标签: 传感器

    Journal Article

    Hong J, Wen H, He J, Liu J, Dan Y, Tomm J W, Yue F, Chu J H, Duan C
    Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes
    Photonics Research, 2021, 9: 714-721.

    | 标签: 传感器

    Journal Article

    Xie G, Zhong Y, Li G, She C, Lu X, Yue F, Liu S, Jing C, Cheng Y, Chu J H
    300 GHz bending transmission of silver/polypropylene hollow terahertz waveguide
    Results in Physics, 2020, 19: 103534.

    | 标签: 传感器

    Journal Article

    Li G, Nie X, Zhou W, Zhang W, Cui H, Xia N, Huang Z, Chu J H, Ma G
    Influence of doping for InSb on ultrafast carrier dynamics measured by time-resolved terahertz spectroscopy
    Applied Optics, 2020, 59: 11046-11052.

    | 标签: 传感器

    Journal Article

    Cui A, Cao X, Ye Y, Jiang K, Zhu L, Jiang M, Rao G, Li Y, Hu Z, Chu J H
    Phase transitions and phonon thermodynamics in giant piezoelectric Mn-doped K 0.5 Na 0.5 NbO 3-LiBiO 3 crystals studied by Raman spectroscopy
    Physical Review B, 2020, 102: 214102.

    | 标签: 传感器

    Journal Article

    Lian Q, Zhou L, Zhang J, Wu H, Bai W, Yang J, Zhang Y, Qi R, Huang R, Tang X, Chu J H
    Nanometer-thick metastable zinc blende γ-MnTe single-crystalline films for high-performance ultraviolet and broadband photodetectors
    ACS Applied Nano Materials, 2020, 3: 12046-12054.

    | 标签: 传感器

    Journal Article

    Gao C, Lee M P, Li M, Lee K C, Yang F S, Lin C Y, Watanabe K, Taniguchi T, Chiu P W, Lien C H, Wu W-W, Lin S-P, Li W, Lin Y-F, Chu J H
    Mimic drug dosage modulation for neuroplasticity based on charge‐trap layered electronics
    Advanced Functional Materials, 2021, 31: 2005182.

    | 标签: 传感器

    Journal Article

    Weng G, Yan J, Chen S, Zhao C, Zhang H, Tian J, Liu Y, Hu X, Tao J, Chen S, Chu J H
    Superior single-mode lasing in a self-assembly CsPbX3 microcavity over an ultrawide pumping wavelength range
    Photonics Research, 2020, 9: 54-65.

    | 标签: 传感器

    Journal Article

    Mao N, Meng L, Li Y, Hu Z, Chu J H
    Enhanced voltage endurance capability of Ba (Zr0. 2Ti0. 8) O3 thin films induced by atomic-layer-deposited Al2O3 intercalations and the application in electrostatic energy storage
    Ceramics International, 2021, 47: 7720-7727.

    | 标签: 传感器

    Journal Article

    Du S, Wu C, Ao L, Zhou X, Jiang K, Shang L, Li Y, Zhang J, Hu Z, Chu J H
    Significantly enhanced lithium storage by in situ grown CoS2@ MoS2 core–shell nanorods anchored on carbon cloth
    Chemical Engineering Journal, 2021, 420: 127714.

    | 标签: 传感器

    Journal Article

    Zhao F, Guo Y, Wang X, Zhou J, Tao J, Zheng D, Jiang J, Hu Z, Chu J H
    Influence of CsPbBr3/TiO2 interfaces deposited with magnetron sputtering and spin-coating methods on the open voltage deficit and efficiency of all-inorganic CsPbBr3 planar solar cells
    Journal of Alloys Compounds, 2021, 860: 157900.

    | 标签: 传感器

    Journal Article

    Zhao C, Tao J, Tian J, Weng G, Liu H, Liu Y, Yan J, Chen S, Pan Y, Hu X, Chen S, Hidefumi A, Chu J H
    High performance single-mode vertical cavity surface emitting lasers based on CsPbBr3 nanocrystals with simplified processing
    Chemical Engineering Journal, 2021, 420: 127660.

    | 标签: 传感器

    Journal Article

    Wu, Fan; Ren, Jie; Yang, Yi; Yan, Zhaoyi; Tian, He; Gou, Guangyang; Wang, Xuefeng; Zhang, Zijian; Yang, Xin; Wu, Xing; Ren, Tianling
    A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography
    In: Advanced Electronic Materials, vol. 2100543, pp. 1-7, 2021.

    Links | BibTeX | 标签: 传感器 原位电镜 可靠性


    @article{NOKEYe,
    title = {A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography},
    author = {Fan Wu and Jie Ren and Yi Yang and Zhaoyi Yan and He Tian and Guangyang Gou and Xuefeng Wang and Zijian Zhang and Xin Yang and Xing Wu and Tianling Ren},
    doi = {10.1002/aelm.202100543},
    year = {2021},
    date = {2021-10-19},
    urldate = {2021-10-19},
    journal = {Advanced Electronic Materials},
    volume = {2100543},
    pages = {1-7},
    keywords = {传感器, 原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Wang, Chaolun; Zou, Qiran; Cheng, Zhiheng; Chen, Jietao; Luo, Chen; Liang, Fang; Cai, Chunhua; Bi, Hengchang; Lian, Xiaocong; Ji, Xiangyang; Zhang, Qiubo; Sun, Litao; Wu, Xing
    Tailoring Atomic 1T Phase CrTe2 For In Situ Fabrication
    In: Nanotechnology, vol. 33, no. 8, 2021, ISSN: 0957-4484.

    Links | BibTeX | 标签: 原位电镜


    @article{NOKEYf,
    title = {Tailoring Atomic 1T Phase CrTe2 For In Situ Fabrication},
    author = {Chaolun Wang and Qiran Zou and Zhiheng Cheng and Jietao Chen and Chen Luo and Fang Liang and Chunhua Cai and Hengchang Bi and Xiaocong Lian and Xiangyang Ji and Qiubo Zhang and Litao Sun and Xing Wu},
    doi = {10.1088/1361-6528/ac3a3a},
    issn = {0957-4484},
    year = {2021},
    date = {2021-10-02},
    urldate = {2021-10-02},
    journal = {Nanotechnology},
    volume = {33},
    number = {8},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Tianyi Fan; Zheyu Liu; Xiyue Tian;, Junda Li; Jin Yang; Chaolun Wang; Hengchang Bi;Fei Qiao;Xing Wu; Junhao Chu
    Object Identification with Smart Glove Assembled by Pressure Sensors
    In: IEEE Sensors Letters, vol. 5, no. 10, pp. 5500904, 2021.

    Links | BibTeX | 标签: 传感器 芯片设计    


       

    @article{nokey,
    title = {Object Identification with Smart Glove Assembled by Pressure Sensors},
    author = {Tianyi Fan; Zheyu Liu; Xiyue Tian;, Junda Li; Jin Yang; Chaolun Wang; Hengchang Bi;Fei Qiao;Xing Wu; Junhao Chu},
    doi = {10.1109/LSENS.2021.3114314},
    year = {2021},
    date = {2021-09-21},
    urldate = {2021-09-21},
    journal = {IEEE Sensors Letters},
    volume = {5},
    number = {10},
    pages = {5500904},
    keywords = {传感器, 芯片设计},
    pubstate = {published},
    tppubtype = {article}
    }
       


       


    Conference

    Mu, Geng; Ye, Dawei; Lyu, Liangjian; Zhao, Xiaobin; Shi, C. -J. Richard
    An 8-Channel Analog Front-End with a PVT-lnsensitive Switched-Capacitor and Analog Combo DC Servo Loop Achieving 300mV Tolerance and 0.64s Recovery Time to Electrode-DC Offset for Physiological Signal Recording
    2021 IEEE Custom Integrated Circuits Conference (CICC), 2021, ISSN: 2152-3630.

    Links | BibTeX | 标签: 芯片设计


    @conference{GMuCShi21,
    title = {An 8-Channel Analog Front-End with a PVT-lnsensitive Switched-Capacitor and Analog Combo DC Servo Loop Achieving 300mV Tolerance and 0.64s Recovery Time to Electrode-DC Offset for Physiological Signal Recording},
    author = {Geng Mu and Dawei Ye and Liangjian Lyu and Xiaobin Zhao and C. -J. Richard Shi},
    doi = {10.1109/CICC51472.2021.9431506},
    issn = {2152-3630},
    year = {2021},
    date = {2021-04-01},
    urldate = {2021-04-01},
    booktitle = {2021 IEEE Custom Integrated Circuits Conference (CICC)},
    pages = {1-2},
    keywords = {芯片设计},
    pubstate = {published},
    tppubtype = {conference}
    }



    Journal Article

    Chen, Xinqian; Du, Feibo; Wang, Chaolun; Xu, Hejun; Zhang, Yuxin; Hou, Fei; Yang, Xin; Wu, Yongren; Tsai, Chihang; Chen, Zhirong; Guo, Yurou; Liu, Zhiwei; Wu, Xing
    Direct Visualization of Breakdown-Induced Metal Migration in Enhanced Modified Lateral Silicon-Controlled Rectifiers
    In: IEEE Transactions on Electron Devices, vol. 68, no. 3, pp. 1378-1381, 2021, ISSN: 0018-9383.

    Abstract | Links | BibTeX | 标签: 可靠性

    The robustness of electrostatic sensitive devices is important in state-of-the-art silicon technology. However, the electrical breakdown-induced microstructure evolution remains unclear. In this work, we performed the physical failure analysis of breakdown in an enhanced modified lateral silicon-controlled rectifier-based electrostatic discharge (ESD) device. Direct visualization of the conductive metal filaments in the doped silicon substrate has been achieved by high-resolution transmission electron microscopy. The locations of these metal filaments induced by breakdown are found near the cathode. The evolution of these microstructural changes and chemical properties provides guide to the failure analysis of ESD devices.

    <Go to ISI>://WOS:000622100700070

    doi:10.1109/ted.2021.3053501


    @article{RN169,
    title = {Direct Visualization of Breakdown-Induced Metal Migration in Enhanced Modified Lateral Silicon-Controlled Rectifiers},
    author = {Xinqian Chen and Feibo Du and Chaolun Wang and Hejun Xu and Yuxin Zhang and Fei Hou and Xin Yang and Yongren Wu and Chihang Tsai and Zhirong Chen and Yurou Guo and Zhiwei Liu and Xing Wu},
    url = {<Go to ISI>://WOS:000622100700070},
    doi = {10.1109/ted.2021.3053501},
    issn = {0018-9383},
    year  = {2021},
    date = {2021-01-01},
    urldate = {2021-01-01},
    journal = {IEEE Transactions on Electron Devices},
    volume = {68},
    number = {3},
    pages = {1378-1381},
    abstract = {The robustness of electrostatic sensitive devices is important in state-of-the-art silicon technology. However, the electrical breakdown-induced microstructure evolution remains unclear. In this work, we performed the physical failure analysis of breakdown in an enhanced modified lateral silicon-controlled rectifier-based electrostatic discharge (ESD) device. Direct visualization of the conductive metal filaments in the doped silicon substrate has been achieved by high-resolution transmission electron microscopy. The locations of these metal filaments induced by breakdown are found near the cathode. The evolution of these microstructural changes and chemical properties provides guide to the failure analysis of ESD devices.},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Cheng, Yuan; Wu, Xing; Zhang, Zijian; Sun, Yao; Zhao, Yunshan; Zhang, Yingyan; Zhang, Gang
    Thermo-Mechanical Correlation in Two-Dimensional Materials
    In: Nanoscale, vol. 13, no. 3, pp. 1425-1442, 2021, ISSN: 2040-3364.

    Links | BibTeX | 标签: 传感器 可靠性

    <Go to ISI>://WOS:000612999200003

    doi:10.1039/d0nr06824a


    @article{RN170,
    title = {Thermo-Mechanical Correlation in Two-Dimensional  Materials},
    author = {Yuan Cheng and Xing Wu and Zijian Zhang and Yao Sun and Yunshan Zhao and Yingyan Zhang and Gang Zhang},
    url = {<Go to ISI>://WOS:000612999200003},
    doi = {10.1039/d0nr06824a},
    issn = {2040-3364},
    year  = {2021},
    date = {2021-01-01},
    urldate = {2021-01-01},
    journal = {Nanoscale},
    volume = {13},
    number = {3},
    pages = {1425-1442},
    keywords = {传感器, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Dong, Zuoyuan; Liu, Hua; Yang, Xin; Fan, Jichen; Bi, Hengchang; Wang, Chaolun; Zhang, Yonghua; Luo, Chen; Chen, Xinqian; Wu, Xing
    Facile Fabrication of Paper-Based Flexible Thermoelectric Generator
    In: npj Flexible Electronics, vol. 5, no. 1, 2021.

    Links | BibTeX | 标签: 传感器

    <Go to ISI>://WOS:000630395300001

    doi:10.1038/s41528-021-00103-1


    @article{RN168,
    title = {Facile Fabrication of Paper-Based Flexible Thermoelectric Generator},
    author = {Zuoyuan Dong and Hua Liu and Xin Yang and Jichen Fan and Hengchang Bi and Chaolun Wang and Yonghua Zhang and Chen Luo and Xinqian Chen and Xing Wu},
    url = {<Go to ISI>://WOS:000630395300001},
    doi = {10.1038/s41528-021-00103-1},
    year  = {2021},
    date = {2021-01-01},
    urldate = {2021-01-01},
    journal = {npj Flexible Electronics},
    volume = {5},
    number = {1},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Jiang, Wei; Wang, Xudong; Chen, Yan; Wu, Shuaiqin; Wu, Binmin; Yang, Xin; Lin, Tie; Shen, Hong; Meng, Xiangjian; Wu, Xing; Chu, Junhao; Wang, Jianlu
    End-Bonded Contacts of Tellurium Transistors
    In: ACS Applied Materials & Interfaces, vol. 13, no. 6, pp. 7766-7772, 2021, ISSN: 1944-8244.

    Links | BibTeX | 标签: 传感器

    <Go to ISI>://WOS:000621051200078

    doi:10.1021/acsami.0c21675


    @article{RN140,
    title = {End-Bonded Contacts of Tellurium Transistors},
    author = {Wei Jiang and Xudong Wang and Yan Chen and Shuaiqin Wu and Binmin Wu and Xin Yang and Tie Lin and Hong Shen and Xiangjian Meng and Xing Wu and Junhao Chu and Jianlu Wang},
    url = {<Go to ISI>://WOS:000621051200078},
    doi = {10.1021/acsami.0c21675},
    issn = {1944-8244},
    year  = {2021},
    date = {2021-01-01},
    urldate = {2021-01-01},
    journal = {ACS Applied Materials & Interfaces},
    volume = {13},
    number = {6},
    pages = {7766-7772},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Liang, Fang; Cai, Chunhua; Zhang, Kun; Zhang, Lili; Li, Junda; Bi, Hengchang; Wu, Peisong; Zhu, He; Wang, Chaolun; Wang, Hailu; Dong, Zuoyuan; Luo, Chen; Luo, Zewei; Shan, Chongxin; Hu, Weida; Wu, Xing
    Infrared Gesture Recognition System Based on Near-Sensor Computing
    In: IEEE Electron Device Letters, vol. 42, no. 7, pp. 1053-1056, 2021, ISSN: 0741-3106.

    Links | BibTeX | 标签: 传感器 芯片设计

    <Go to ISI>://WOS:000668843100025

    doi:10.1109/led.2021.3078157


    @article{RN216,
    title = {Infrared Gesture Recognition System Based on Near-Sensor Computing},
    author = {Fang Liang and Chunhua Cai and Kun Zhang and Lili Zhang and Junda Li and Hengchang Bi and Peisong Wu and He Zhu and Chaolun Wang and Hailu Wang and Zuoyuan Dong and Chen Luo and Zewei Luo and Chongxin Shan and Weida Hu and Xing Wu},
    url = {<Go to ISI>://WOS:000668843100025},
    doi = {10.1109/led.2021.3078157},
    issn = {0741-3106},
    year  = {2021},
    date = {2021-01-01},
    urldate = {2021-01-01},
    journal = {IEEE Electron Device Letters},
    volume = {42},
    number = {7},
    pages = {1053-1056},
    keywords = {传感器, 芯片设计},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Nazhamaiti, Maimaiti; Xu, Han; Liu, Zheyu; Chen, Yixuan; Wei, Qi; Wu, Xing; Qiao, Fei
    NS-MD: Near-Sensor Motion Detection With Energy Harvesting Image Sensor for Always-On Visual Perception
    In: IEEE Transactions on Circuits and Systems Ii-Express Briefs, vol. 68, no. 9, pp. 3078-3082, 2021, ISSN: 1549-7747./

    Links | BibTeX | 标签: 传感器 芯片设计

    <Go to ISI>://WOS:000692209000013

    doi:10.1109/tcsii.2021.3087840


    @article{RN214,
    title = {NS-MD: Near-Sensor Motion Detection With Energy Harvesting Image Sensor for Always-On Visual Perception},
    author = {Maimaiti Nazhamaiti and Han Xu and Zheyu Liu and Yixuan Chen and Qi Wei and Xing Wu and Fei Qiao},
    url = {<Go to ISI>://WOS:000692209000013},
    doi = {10.1109/tcsii.2021.3087840},
    issn = {1549-7747},
    year  = {2021},
    date = {2021-01-01},
    urldate = {2021-01-01},
    journal = {IEEE Transactions on Circuits and Systems Ii-Express Briefs},
    volume = {68},
    number = {9},
    pages = {3078-3082},
    keywords = {传感器, 芯片设计},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Wang, Chaolun; Jin, Mengge; Liu, Dongming; Liang, Fang; Luo, Chen; Li, Panlin; Cai, Chunhua; Bi, Hengchang; Wu, Xing; Di, Zengfeng
    VSe2 Quantum Dots with High-Density Active Edges for Flexible Efficient Hydrogen Evolution Reaction
    In: Journal of Physics D-Applied Physics, vol. 54, no. 21, 2021, ISSN: 0022-3727.

    Links | BibTeX | 标签: 传感器

    <Go to ISI>://WOS:000626436800001

    doi:10.1088/1361-6463/abe78d


    @article{RN141,
    title = {Construction of Hierarchical alpha-Fe2O3/SnO2 Nanoball Arrays with Superior Acetone Sensing Performance},
    author = {Peng Wang and Su-Zhen Wang and Qing Han and Dong-Qinq Zou and Wen-Kai Zhao and Xue-Dong Wang and Chen Luo and Xin Yang and Xing Wu and Wan-Feng Xie},
    url = {<Go to ISI>://WOS:000601102000001},
    doi = {10.1002/admi.202001831},
    issn = {2196-7350},
    year  = {2021},
    date = {2021-01-01},
    urldate = {2021-01-01},
    journal = {Advanced Materials Interfaces},
    volume = {8},
    number = {5},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Wang, Peng; Wang, Su-Zhen; Han, Qing; Zou, Dong-Qinq; Zhao, Wen-Kai; Wang, Xue-Dong; Luo, Chen; Yang, Xin; Wu, Xing; Xie, Wan-Feng
    Construction of Hierarchical alpha-Fe2O3/SnO2 Nanoball Arrays with Superior Acetone Sensing Performance
    In: Advanced Materials Interfaces, vol. 8, no. 5, 2021, ISSN: 2196-7350.

    Links | BibTeX | 标签: 传感器

    <Go to ISI>://WOS:000601102000001

    doi:10.1002/admi.202001831


    @article{RN141,
    title = {Construction of Hierarchical alpha-Fe2O3/SnO2 Nanoball Arrays with Superior Acetone Sensing Performance},
    author = {Peng Wang and Su-Zhen Wang and Qing Han and Dong-Qinq Zou and Wen-Kai Zhao and Xue-Dong Wang and Chen Luo and Xin Yang and Xing Wu and Wan-Feng Xie},
    url = {<Go to ISI>://WOS:000601102000001},
    doi = {10.1002/admi.202001831},
    issn = {2196-7350},
    year  = {2021},
    date = {2021-01-01},
    urldate = {2021-01-01},
    journal = {Advanced Materials Interfaces},
    volume = {8},
    number = {5},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Xiyue, Tian; Zheyu, Liu; Congwei, Guo; Jin, Yang; Jietao, Chen; Shujing, Lyu; Hengchang, Bi; Fei, Qiao; Xing, Wu; Yue, Lu
    Pressure Sensor Array With Low-Power Near-Sensor CMOS Chip for Human Gait Monitoring
    In: IEEE Sensors Letters, vol. 5, no. 2, pp. 6000304 (4 pp.)-6000304 (4 pp.), 2021, ISSN: 2475-1472.

    Links | BibTeX | 标签: 传感器

    <Go to ISI>://INSPEC:20383448

    doi:10.1109/lsens.2021.3053963


    @article{RN135,
    title = {Pressure Sensor Array With Low-Power Near-Sensor CMOS Chip for Human Gait Monitoring},
    author = {Tian Xiyue and Liu Zheyu and Guo Congwei and Yang Jin and Chen Jietao and Lyu Shujing and Bi Hengchang and Qiao Fei and Wu Xing and Lu Yue},
    url = {<Go to ISI>://INSPEC:20383448},
    doi = {10.1109/lsens.2021.3053963},
    issn = {2475-1472},
    year  = {2021},
    date = {2021-01-01},
    urldate = {2021-01-01},
    journal = {IEEE Sensors Letters},
    volume = {5},
    number = {2},
    pages = {6000304 (4 pp.)-6000304 (4 pp.)},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Yang, Xin; Luo, Chen; Tian, Xiyue; Liang, Fang; Xia, Yin; Chen, Xinqian; Wang, Chaolun; Liang, Steve Xin; Wu, Xing; Chu, Junhao
    A Revew of In Situ Transmission Electron Microscopy Study on the Switching Mechanism and Packaging Reliability in Non-volatile Memory
    In: Journal of Semiconductors, vol. 42, no. 1, 2021, ISSN: 1674-4926, (2).

    Links | BibTeX | 标签: 原位电镜 可靠性

    <Go to ISI>://WOS:000620493400001

    doi:10.1088/1674-4926/42/1/013102


    @article{RN137,
    title = {A Revew of In Situ Transmission Electron Microscopy Study on the Switching Mechanism and Packaging Reliability in Non-volatile Memory},
    author = {Xin Yang and Chen Luo and Xiyue Tian and Fang Liang and Yin Xia and Xinqian Chen and Chaolun Wang and Steve Xin Liang and Xing Wu and Junhao Chu},
    url = {<Go to ISI>://WOS:000620493400001},
    doi = {10.1088/1674-4926/42/1/013102},
    issn = {1674-4926},
    year  = {2021},
    date = {2021-01-01},
    urldate = {2021-01-01},
    journal = {Journal of Semiconductors},
    volume = {42},
    number = {1},
    note = {2},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Zhou, Wenbin; He, Qian; Ye, Haifeng; Ye, Changqing; Wu, Xing; Chu, Junhao
    Recent Advances in Flexible Sweat Glucose Biosensors
    In: Journal of Physics D-Applied Physics, vol. 54, no. 42, 2021, ISSN: 0022-3727./

    Links | BibTeX | 标签: 传感器

    <Go to ISI>://WOS:000680170900001

    doi:10.1088/1361-6463/ac14ef


    @article{RN217,
    title = {Recent Advances in Flexible Sweat Glucose Biosensors},
    author = {Wenbin Zhou and Qian He and Haifeng Ye and Changqing Ye and Xing Wu and Junhao Chu},
    url = {<Go to ISI>://WOS:000680170900001},
    doi = {10.1088/1361-6463/ac14ef},
    issn = {0022-3727},
    year  = {2021},
    date = {2021-01-01},
    urldate = {2021-01-01},
    journal = {Journal of Physics D-Applied Physics},
    volume = {54},
    number = {42},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



  • 2020

    Journal Article

    Pan Z, Zhang J, Lian Q, Bai W, Yang J, Zhang Y, Qi R, Huang R, Tang X, Chu J H
    The dependence of optoelectric performance on channel length in photodetectors with MBE CdTe single-crystalline thin films on perovskite SrTiO3
    Optical Materials, 2020, 109: 110276.

    | 标签: 传感器

    Journal Article

    Zhang S, Jiao H, Wang X, Chen Y, Wang H, Zhu L, Jiang W, Liu J, Sun L, Lin T, Shen H, Hu W, Meng X, Pan D, Wang J, Zhao J, Chu J H
    Highly sensitive InSb nanosheets infrared photodetector passivated by ferroelectric polymer
    Advanced Functional Materials, 2020, 30: 2006156.

    | 标签: 传感器

    Journal Article

    Xie M, Li M, Li L, Zhang J, Jiang K, Shang L, Li Y, Hu Z, Chu J H
    Temperature-dependent phonon mode and interband electronic transition evolutions of ε-InSe films derived by pulsed laser deposition
    Applied Physics Letters, 2020, 117:

    | 标签: 传感器

    Journal Article

    Jiang W, Zheng T, Wu B, Jiao H, Wang X, Chen Y, Zhang X, Peng M, Wang H, Lin T, Shen H, Ge J, Hu W, Xu X, Meng X, Chu J H, Wang J
    A versatile photodetector assisted by photovoltaic and bolometric effects
    Light: Science Applications, 2020, 9: 160.

    | 标签: 传感器

    Journal Article

    Jiang K, Cui A, Shao S, Feng J, Dong H, Chen B, Wang Y, Hu Z, Chu J H
    New pressure stabilization structure in two-dimensional PtSe2
    The journal of physical chemistry letters, 2020, 11: 7342-7349.

    | 标签: 传感器

    Journal Article

    Du E-W, Gong S-J, Tang X, Chu J H, Rappe A M, Gong C
    Ferroelectric switching of pure spin polarization in two-dimensional electron gas
    Nano Letters, 2020, 20: 7230-7236.

    | 标签: 传感器

    Journal Article

    Wu C, Ao L, Du S, Jiang K, Zhang J, Shang L, Li Y, Hu Z, Chu J H
    Gradient electrospinning and controlled pyrolysis derived FexOy@ N-doped carbon nanorods towards enhanced lithium storage
    Journal of Alloys Compounds, 2021, 851: 156097.

    | 标签: 传感器

    Journal Article

    Li L, Li G, Zhang W, She C, Lin J, Liu S, Yue F, Jing C, Cheng Y, Chu J H
    A flexible paper sensor based on polyaniline/germanium film for NH3 detection
    Materials Letters, 2020, 278: 128438.

    | 标签: 传感器

    Journal Article

    Weng G, Liu Y, Chen S, Ito T, Hu X, Zhao C, Liu J, Chu J H, Akiyama H
    Quantitative study of electron tunneling dynamics in asymmetric coupled InGaN/GaN quantum wells
    Applied Optics, 2020, 59: 6231-6236.

    | 标签: 传感器

    Journal Article

    Ye Y, Cui A, Bian M, Jiang K, Zhu L, Zhang J, Shang L, Li Y, Hu Z, Chu J H
    Temperature and pressure manipulation of magnetic ordering and phonon dynamics with phase transition in multiferroic GdFeO 3: Evidence from Raman scattering
    Physical Review B, 2020, 102: 024103.

    | 标签: 传感器

    Journal Article

    Wu G, Wang X, Chen Y, Wu S, Shen H, Lin T, Ge J, Hu W, Zhang S-T, Meng X, Chu J H
    Two-dimensional series connected photovoltaic cells defined by ferroelectric domains
    Applied Physics Letters, 2020, 116:

    | 标签: 传感器

    Journal Article

    Zhang J, Lian Q, Pan Z, Bai W, Yang J, Zhang Y, Tang X, Chu J H
    Spin‐phonon coupling and two‐magnons scattering behaviors in hexagonal NiAs‐type antiferromagnetic MnTe epitaxial films
    Journal of Raman Spectroscopy, 2020, 51: 1383-1389.

    | 标签: 传感器

    Journal Article

    Zheng D, Deng H, Pan Y, Guo Y, Zhao F, Yang P, Chu J H
    Modified multiferroic properties in narrow bandgap (1-x) BaTiO3-xBaNb1/3Cr2/3O3-δ ceramics
    Ceramics International, 2020, 46: 26823-26828.

    | 标签: 传感器

    Journal Article

    Zheng D, Deng H, Li K, Zhang C, Guo Y, Yang P, Chu J H
    Structural, optical, and enhanced multiferroic properties of (1-x) BaTiO3-xBaNi0. 5Nb0. 5O3-δ ceramics
    Materials Letters, 2020, 277: 128319.

    | 标签: 传感器

    Journal Article

    Lu X, Xu B, Ma C, Chen Y, Yang P, Chu J H, Sun L
    Improving the efficiency of Cu2ZnSnS4 solar cells by promoting the homogeneous distribution of Sn element
    Applied Surface Science, 2020, 529: 147160.

    | 标签: 传感器

    Journal Article

    Si S, Deng H, Wang T, Zheng D, Yang P, Chu J H
    Structural, optical, and enhanced multiferroic properties of x CoFe 2 O 4-(1− x) K 0.5 Bi 0.5 TiO 3 ferrite–ferroelectric composites
    Journal of Materials Science: Materials in Electronics, 2020, 31: 10639-10648.

    | 标签: 传感器

    Journal Article

    Zhou B, Jiang K, Shang L, Zhang J, Li Y, Zhu L, Gong S-J, Hu Z, Chu J H
    Enhanced carrier separation in ferroelectric In 2 Se 3/MoS 2 van der Waals heterostructure
    Journal of Materials Chemistry C, 2020, 8: 11160-11167.

    | 标签: 传感器

    Journal Article

    Sun H, Zhou X, Wang X, Xu L, Zhang J, Jiang K, Shang L, Hu Z, Chu J H
    P–N conversion of charge carrier types and high photoresponsive performance of composition modulated ternary alloy W (S x Se 1− x) 2 field-effect transistors
    Nanoscale, 2020, 12: 15304-15317.

    | 标签: 传感器

    Journal Article

    Zhao F, Guo Y, Tao J, Li Z, Jiang J, Chu J H
    Investigation of CsPbBr 3 films with controllable morphology and its influence on the photovoltaic properties for carbon-based planar perovskite solar cells
    Applied Optics, 2020, 59: 5481-5486.

    | 标签: 传感器

    Journal Article

    Hu X, Wang Y, Jia Y, Hong J, Chen T, Xue J, Chen Y, Tao J, Weng G, Chen S, Chu J H
    Resistive Effects on the Spatially Resolved Absolute Electroluminescence of Thin-Film Cu (In, Ga) Se 2 Solar Cells Studied by a Distributed Two-Diode Model
    IEEE Access, 2020, 8: 112859-112866.

    | 标签: 传感器

    Journal Article

    Zhao F, Guo Y, Wang X, Tao J, Li Z, Zheng D, Jiang J, Hu Z, Chu J H
    Efficient carbon-based planar CsPbBr3 perovskite solar cells with Li-doped amorphous Nb2O5 layer
    Journal of Alloys Compounds, 2020, 842: 155984.

    | 标签: 传感器

    Journal Article

    Huang F, Xu Y, Pan Z, Li W, Chu J H
    Direct patterning on top-gate organic thin-film transistors: Improvement of on/off ratio, subthreshold swing, and uniformity
    IEEE Electron Device Letters, 2020, 41: 1082-1085.

    | 标签: 传感器

    Journal Article

    Si S, Deng H, Wang T, Yang P, Chu J H
    Structural phase transition, optical bandgap, interband electronic transition, and improved magnetism in bivalent Ca-, Sr-, Pb-, and Ba-doped BiFeO 3 ceramics
    Journal of Materials Science: Materials in Electronics, 2020, 31: 8464-8471.

    | 标签: 传感器

    Journal Article

    Xu B, Ma C, Lu X, Liu Y, Zhang Q, Chen Y, Yang P, Chu J H, Sun L
    Beyond 10% efficient Cu2ZnSn (S, Se) 4 solar cells: Effects of the introduction of SnS powder during selenization process
    Solar Energy Materials Solar Cells, 2020, 210: 110522.

    | 标签: 传感器

    Journal Article

    Chen F, Cui A, Wang X, Gao C, Xu L, Jiang K, Zhang J, Hu Z, Chu J H
    Lattice vibration characteristics in layered InSe films and the electronic behavior of field-effect transistors
    Nanotechnology, 2020, 31: 335702.

    | 标签: 传感器

    Journal Article

    Xu B, Lu X, Ma C, Liu Y, Qi R, Huang R, Chen Y, Yang P, Chu J H, Sun L
    MoO 2 Sacrificial Layer for Optimizing Back Contact Interface of Cu 2 ZnSn (S, Se) 4 Solar Cells
    IEEE Journal of Photovoltaics, 2020, 10: 1191-1200.

    | 标签: 传感器

    Journal Article

    Mao F, Hong J, Wang H, Chen Y, Jing C, Yang P, Tomm J W, Chu J H, Yue F
    Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes
    AIP Advances, 2020, 10:

    | 标签: 传感器

    Journal Article

    Li G, Zhang W, She C, Jia S, Liu S, Yue F, Jing C, Cheng Y, Chu J H
    Stable fluorescent NH3 sensor based on MAPbBr3 encapsulated by tetrabutylammonium cations
    Journal of Alloys Compounds, 2020, 835: 155386.

    | 标签: 传感器

    Journal Article

    Wu B, Wang X, Tang H, Jiang W, Chen Y, Wang Z, Cui Z, Lin T, Shen H, Hu W, Meng X, Bao W, Wang J, Chu J H
    Multifunctional MoS2 transistors with electrolyte gel gating
    Small, 2020, 16: 2000420.

    | 标签: 传感器

    Journal Article

    Bai J, Liu Q, Wu M, Yang J, Jiang W, Wang J, Bai W, Zhang Y, Tang X, Chu J H
    Correlation of oxygen vacancy and Jahn–Teller polarons in epitaxial perovskite SrMnO3 ultrathin films: Dielectric spectroscopy investigations
    Applied Physics Letters, 2020, 116:

    | 标签: 传感器

    Journal Article

    Zhou J, Xie M, Ji H, Cui A, Ye Y, Jiang K, Shang L, Zhang J, Hu Z, Chu J H
    Mixed-dimensional van der Waals heterostructure photodetector
    ACS applied materials interfaces, 2020, 12: 18674-18682.

    | 标签: 传感器

    Journal Article

    Guo Y, Zhao F, Li Z, Tao J, Zheng D, Jiang J, Chu J H
    Growth control and defect passivation toward efficient and low-temperature processed carbon based CsPbIBr2 solar cell
    Organic Electronics, 2020, 83: 105731.

    | 标签: 传感器

    Journal Article

    Guo Y, Zhao F, Li Z, Tao J, Zheng D, Jiang J, Chu J H
    Growth control and defect passivation toward efficient and low-temperature processed carbon based CsPbIBr2 solar cell
    Organic Electronics, 2020, 83: 105731.

    | 标签: 传感器

    Journal Article

    Wu G, Wang X, Chen Y, Wu S, Wu B, Jiang Y, Shen H, Lin T, Liu Q, Wang X, Chu J H, Wang J
    MoTe2 p–n homojunctions defined by ferroelectric polarization
    Advanced Materials, 2020, 32: 1907937.

    | 标签: 传感器

    Journal Article

    Wu G, Wang X, Chen Y, Wu S, Shen H, Lin T, Ge J, Hu W, Zhang S-T, Meng X, Chu J H, Wang J
    Two-dimensional series connected photovoltaic cells defined by ferroelectric domains
    Applied Physics Letters, 2020, 116:

    | 标签: 传感器

    Journal Article

    Yin W, Yang J, Zhao K, Cui A, Zhou J, Tian W, Li W, Hu Z, Chu J H
    High responsivity and external quantum efficiency photodetectors based on solution-processed Ni-doped CuO films
    ACS applied materials interfaces, 2020, 12: 11797-11805.

    | 标签: 传感器

    Journal Article

    Zhang H, Zhao C, Chen S, Tian J, Yan J, Weng G, Hu X, Tao J, Pan Y, Chen S, Hidefumi A, Chu J H
    Lasing operation in the CsPbBr3 perovskite micron hemisphere cavity grown by chemical vapor deposition
    Chemical Engineering Journal, 2020, 389: 124395.

    | 标签: 传感器

    Journal Article

    Zhang K, Du Y, Qi Z, Cheng B, Fan X, Wei L, Li L, Wang D, Yu G, Hu S, Chu J H
    Room-Temperature Anisotropic Plasma Mirror and Polarization-Controlled Optical Switch Based on Type-II Weyl Semimetal WP 2
    Physical Review Applied, 2020, 13: 014058.

    | 标签: 传感器

    Journal Article

    Zhang X, Wang L, Wang X, Chen Y, Shao Q, Wu G, Wang X, Lin T, Shen H, Wang J, Chu J H
    High-performance β-Ga 2 O 3 thickness dependent solar blind photodetector
    Optics Express, 2020, 28: 4169-4177.

    | 标签: 传感器

    Journal Article

    Li C, Jiang K, Jiang J, Hu Z, Liu A, Hu G, Shi W, Chu J H
    Enhanced photovoltaic response of lead-free ferroelectric solar cells based on (K, Bi)(Nb, Yb) O 3 films
    Physical Chemistry Chemical Physics, 2020, 22: 3691-3701.

    | 标签: 传感器

    Journal Article

    Li C, Jiang K, Jiang J, Hu Z, Liu A, Hu G, Shi W, Chu J H
    Enhanced photovoltaic response of lead-free ferroelectric solar cells based on (K, Bi)(Nb, Yb) O 3 films
    Physical Chemistry Chemical Physics, 2020, 22: 3691-3701.

    | 标签: 传感器

    Journal Article

    Chen F, Zhou B, Zhang P, Ye Y, Sun H, Xu L, Zhu L, Jiang K, Gong Y, Hu Z, Chu J H
    Effects of composition and temperature on the exciton emission behaviors of Mo (SxSe1− x) 2 monolayer: experiment and theory
    Nanotechnology, 2020, 31: 155703.

    | 标签: 传感器

    Journal Article

    Wu G, Tian B, Liu L, Lv W, Wu S, Wang X, Chen Y, Li J, Wang Z, Wu S, Shen H, Lin T, Zhou P, Liu Q, Duan C, Zhang S, Meng X, Wu S, Hu W, Wang X, Chu J H, Wang J
    Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains
    Nature Electronics, 2020, 3: 43-50.

    | 标签: 传感器

    Journal Article

    Wang H, Wang X, Chen Y, Zhang S, Jiang W, Zhang X, Qin J, Wang J, Li X, Pan Y, Liu F, Shi Z, Zhang H, Tu L, Wang H, Li D, Lin T, Wang J, Zhan Y, Shen H, Meng X, Chu J H
    Extremely low dark current MoS2 photodetector via 2D halide perovskite as the electron reservoir
    Advanced Optical Materials, 2020, 8: 1901402.

    | 标签: 传感器

    Journal Article

    Xue J, Hu X, Guo Y, Weng G, Jiang J, Chen S, Zhu Z, Chu J H
    Diagnosis of electrically active defects in CH 3 NH 3 PbI 3 perovskite solar cells via admittance spectroscopy measurements
    Applied Optics, 2020, 59: 552-557.

    | 标签: 传感器

    Journal Article

    Tu L, Cao R, Wang X, Chen Y, Wu S, Wang F, Wang Z, Shen H, Lin T, Zhou P, Meng X, Hu W, Liu Q, Wang J, Liu M, Chu J H
    Ultrasensitive negative capacitance phototransistors
    Nature communications, 2020, 11: 101.

    | 标签: 传感器

    Journal Article

    Ma S, Li H, Hong J, Wang H, Lu X, Chen Y, Sun L, Yue F, Tomm J W, Chu J H
    Origin of band-tail and deep-donor states in Cu2ZnSnS4 solar cells and their suppression through Sn-poor composition
    The journal of physical chemistry letters, 2019, 10: 7929-7936.

    | 标签: 传感器

    Journal Article

    Zhang Y, Deng H, Si S, Wang T, Zheng D, Yang P, Chu J H
    Band gap narrowing and magnetic properties of transition‐metal‐doped Ba0. 85Ca0. 15Ti0. 9Zr0. 1O3 lead‐free ceramics
    Journal of the American Ceramic Society, 2020, 103: 2491-2498.

    | 标签: 传感器

    Journal Article

    Hong J, Wang Y, Chen Y, Hu X, Weng G, Chen S, Akiyama H, Zhang Y, Zhang B, Chu J H
    Absolute electroluminescence imaging with distributed circuit modeling: Excellent for solar‐cell defect diagnosis
    Progress in Photovoltaics: Research Applications, 2020, 28: 295-306.

    | 标签: 传感器

    Journal Article

    Guan Z, Hu H, Shen X, Xiang P, Zhong N, Chu J H, Duan C
    Recent progress in two‐dimensional ferroelectric materials
    Advanced Electronic Materials, 2020, 6: 1900818.

    | 标签: 传感器

    Journal Article

    Ma C, Lu X, Xu B, Zhao F, An X, Li B, Yue F, Jiang J, Chen Y, Sun L, Chu J H
    Effect of CZTS/CdS interfaces deposited with sputtering and CBD methods on Voc deficit and efficiency of CZTS solar cells
    Journal of Alloys Compounds, 2020, 817: 153329.

    | 标签: 传感器

    Journal Article

    Wu B, Wang X, Tang H, Lin T, Shen H, Hu W, Meng X, Bao W, Wang J, Chu J H
    A study on ionic gated MoS 2 phototransistors
    Science China Information Sciences, 2019, 62: 1-8.

    | 标签: 传感器

    Journal Article

    Jiang C, Luo Q, Fu H, Lin H, Luo C, Wang J, Meng X, Peng H, Duan C-G, Chu J H
    Ferroelectricity and antiferromagnetism in organic–inorganic hybrid (1, 4-bis (imidazol-1-ylmethyl) benzene) CuCl 4· H 2 O
    CrystEngComm, 2020, 22: 587-592.

    | 标签: 传感器

    Journal Article

    Weng G, Chen S, Mei Y, Liu Y, Akiyama H, Hu X, Liu J, Zhang B, Chu J H
    Multiwavelength GaN‐based surface‐emitting lasers and their design principles
    Annalen der Physik, 2020, 532: 1900308.

    | 标签: 传感器

    Journal Article

    Ding Q, Xu L, Zhang J, Jiang K, Hu Z, Zhou Z, Dong X, Chu J H
    Exploration of a Ca1− x (NaCe) x/2Bi4Ti3. 98 (WNb) 0.01 O15 ceramic intermediate phase by temperature-dependent spectroscopic ellipsometry and Raman scattering
    Journal of Vacuum Science Technology B, 2019, 37:

    | 标签: 传感器

    Journal Article

    Tian X, Liu Z, Luo Z, Wu X, Qiao F, Wang X, Li G, Wu J, Zhang J, Liu Z, Chu J H
    Dual-mode sensor and actuator to learn human-hand tracking and grasping
    IEEE Transactions on Electron Devices, 2019, 66: 5407-5410.

    | 标签: 传感器

    Journal Article

    Zhang W, Li G, Chen Y, Liu S, Xu J, Jing C, Zhang J, Yang J, Cheng Y, Chu J H
    Dynamic liquid phase deposition of doped nanostructured PANI tube sensor for trace-level NH3 gas detection
    Sensors Actuators B: Chemical, 2020, 305: 127459.

    | 标签: 传感器

    Journal Article

    Ao L, Wu C, Xu Y, Wang X, Jiang K, Shang L, Li Y, Zhang J, Hu Z, Chu J H
    A novel Sn particles coated composite of SnOx/ZnO and N-doped carbon nanofibers as high-capacity and cycle-stable anode for lithium-ion batteries
    Journal of Alloys Compounds, 2020, 819: 153036.

    | 标签: 传感器

    Conference

    Tu, Yuting; Xu, Rongjin; Ye, Dawei; Lyu, Liangjian; Shi, C. -J. Richard
    A 400 MHz, 8-Bit, 1.75-ps Resolution Pipelined-Two-Step Time-to-Digital Converter with Dynamic Time Amplification
    2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020, ISSN: 2158-1525./

    Abstract | Links | BibTeX | 标签: 芯片设计

    This work proposes a high-speed pipelined-two-step time-to-digital converter (TDC) with a dynamic time amplification (DTA) to improve the resolution at low power. The key element of this TDC is the DTA. It samples the residual time errors as voltages held in the MOM capacitors and discharges them to generate the amplified time difference. Thanks to the dynamic time-voltage-time conversion, the DTA realizes high linearity and power efficiency, and can be employed to build a pipeline TDC architecture with high sampling frequency because of its sample and hold operation. Moreover, the DTA maintains constant gain, so only a one-time forground calibration for gain mismatch is required in this TDC. Simulations show that the TDC designed in 65 nm CMOS achieves 8-bit, 1.75 ps of time resolution, and 1 LSB INL and 1.6 LSB DNL with one-time foreground calibration at 400 MHz sampling frequency while just consuming 726 μW power, which corresponds to 18.45 fJ/Conv. FoM.


    @conference{YTuCShi20,
    title = {A 400 MHz, 8-Bit, 1.75-ps Resolution Pipelined-Two-Step Time-to-Digital Converter with Dynamic Time Amplification},
    author = {Yuting Tu and Rongjin Xu and Dawei Ye and Liangjian Lyu and C. -J. Richard Shi},
    doi = {10.1109/ISCAS45731.2020.9180553},
    issn = {2158-1525},
    year = {2020},
    date = {2020-10-01},
    urldate = {2020-10-01},
    booktitle = {2020 IEEE International Symposium on Circuits and Systems (ISCAS)},
    pages = {1-4},
    abstract = {This work proposes a high-speed pipelined-two-step time-to-digital converter (TDC) with a dynamic time amplification (DTA) to improve the resolution at low power. The key element of this TDC is the DTA. It samples the residual time errors as voltages held in the MOM capacitors and discharges them to generate the amplified time difference. Thanks to the dynamic time-voltage-time conversion, the DTA realizes high linearity and power efficiency, and can be employed to build a pipeline TDC architecture with high sampling frequency because of its sample and hold operation. Moreover, the DTA maintains constant gain, so only a one-time forground calibration for gain mismatch is required in this TDC. Simulations show that the TDC designed in 65 nm CMOS achieves 8-bit, 1.75 ps of time resolution, and 1 LSB INL and 1.6 LSB DNL with one-time foreground calibration at 400 MHz sampling frequency while just consuming 726 μW power, which corresponds to 18.45 fJ/Conv. FoM.},
    keywords = {芯片设计},
    pubstate = {published},
    tppubtype = {conference}
    }



    Conference

    Xu, Rongjin; Ye, Dawei; Lyu, Liangjian; Shi, C. -J. Richard
    A 2.0-2.9 GHz Digital Ring-Based Injection-Locked Clock Multiplier Using a Self-Alignment Frequency Tracking Loop for Reference Spur Reduction
    2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2020, ISSN: 2375-0995.

    Abstract | Links | BibTeX | 标签: 芯片设计

    This paper presents a 2.0-2.9 GHz digital ring-based injection-locked clock multiplier (ILCM) in a 65 nm CMOS process. A self-alignment frequency tracking loop (SA-FTL) with background delay calibration is proposed to improve the accuracy of injection timing. Since the frequency mismatch of the free-running oscillator and the target frequency is minimized without delay error, the reference spur is reduced to -55.6 dBc, exhibiting 15.9 dB improvement comparing to the case that the SA-FTL is off. The proposed ILCM achieves 545 fs RMS jitter at 2.5 GHz output frequency with a power consumption of 3.1 mW, achieving the FoM of 240.3 dB.


    @conference{RXuCShi20,
    title = {A 2.0-2.9 GHz Digital Ring-Based Injection-Locked Clock Multiplier Using a Self-Alignment Frequency Tracking Loop for Reference Spur Reduction},
    author = {Rongjin Xu and Dawei Ye and Liangjian Lyu and C. -J. Richard Shi},
    doi = {10.1109/RFIC49505.2020.9218274},
    issn = {2375-0995},
    year = {2020},
    date = {2020-08-01},
    urldate = {2020-08-01},
    booktitle = {2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)},
    pages = {11-14},
    abstract = {This paper presents a 2.0-2.9 GHz digital ring-based injection-locked clock multiplier (ILCM) in a 65 nm CMOS process. A self-alignment frequency tracking loop (SA-FTL) with background delay calibration is proposed to improve the accuracy of injection timing. Since the frequency mismatch of the free-running oscillator and the target frequency is minimized without delay error, the reference spur is reduced to -55.6 dBc, exhibiting 15.9 dB improvement comparing to the case that the SA-FTL is off. The proposed ILCM achieves 545 fs RMS jitter at 2.5 GHz output frequency with a power consumption of 3.1 mW, achieving the FoM of 240.3 dB.},
    keywords = {芯片设计},
    pubstate = {published},
    tppubtype = {conference}
    }



    Journal Article

    Lyu, Liangjian; Ye, Dawei; Shi, C. -J. Richard
    A 340 nW/Channel 110 dB PSRR Neural Recording Analog Front-End Using Replica-Biasing LNA, Level-Shifter Assisted PGA, and Averaged LFP Servo Loop in 65 nm CMOS
    In: IEEE Transactions on Biomedical Circuits and Systems, vol. 14, no. 4, pp. 811-824, 2020, ISSN: 1940-9990.

    Links | BibTeX | 标签: 芯片设计


    @article{LLyuCShi20a,
    title = {A 340 nW/Channel 110 dB PSRR Neural Recording Analog Front-End Using Replica-Biasing LNA, Level-Shifter Assisted PGA, and Averaged LFP Servo Loop in 65 nm CMOS},
    author = {Liangjian Lyu and Dawei Ye and C. -J. Richard Shi},
    doi = {10.1109/TBCAS.2020.2995566},
    issn = {1940-9990},
    year = {2020},
    date = {2020-08-01},
    urldate = {2020-08-01},
    journal = {IEEE Transactions on Biomedical Circuits and Systems},
    volume = {14},
    number = {4},
    pages = {811-824},
    keywords = {芯片设计},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Lyu, Liangjian; Ye, Dawei; Xu, Rongjin; Mu, Geng; Zhao, Heng; Xiang, Yingfei; Tu, Yuting; Zhang, Yiyun; Shi, C. -J. Richard
    A Fully-Integrated 64-Channel Wireless Neural Interfacing SoC Achieving 110 dB AFE PSRR and Supporting 54 Mb/s Symbol Rate, Meter-Range Wireless Data Transmission
    In: IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 67, no. 5, pp. 831-835, 2020, ISSN: 1558-3791.

    Links | BibTeX | 标签: 芯片设计


    @article{LLyuCShi20,
    title = {A Fully-Integrated 64-Channel Wireless Neural Interfacing SoC Achieving 110 dB AFE PSRR and Supporting 54 Mb/s Symbol Rate, Meter-Range Wireless Data Transmission},
    author = {Liangjian Lyu and Dawei Ye and Rongjin Xu and Geng Mu and Heng Zhao and Yingfei Xiang and Yuting Tu and Yiyun Zhang and C. -J. Richard Shi},
    doi = {10.1109/TCSII.2020.2982208},
    issn = {1558-3791},
    year = {2020},
    date = {2020-05-01},
    urldate = {2020-05-01},
    journal = {IEEE Transactions on Circuits and Systems II: Express Briefs},
    volume = {67},
    number = {5},
    pages = {831-835},
    keywords = {芯片设计},
    pubstate = {published},
    tppubtype = {article}
    }



    Ye, Dawei; Wang, Yu; Xiang, Yingfei; Lyu, Liangjian; Min, Hao; Shi, C. -J. Richard
    A Wireless Power and Data Transfer Receiver Achieving 75.4% Effective Power Conversion Efficiency and Supporting 0.1% Modulation Depth for ASK Demodulation
    In: IEEE Journal of Solid-State Circuits, vol. 55, no. 5, pp. 1386-1400, 2020, ISSN: 1558-173X.

    Links | BibTeX | 标签: 芯片设计


    @article{DYeCShi20,
    title = {A Wireless Power and Data Transfer Receiver Achieving 75.4% Effective Power Conversion Efficiency and Supporting 0.1% Modulation Depth for ASK Demodulation},
    author = {Dawei Ye and Yu Wang and Yingfei Xiang and Liangjian Lyu and Hao Min and C. -J. Richard Shi},
    doi = {10.1109/JSSC.2019.2943871},
    issn = {1558-173X},
    year = {2020},
    date = {2020-05-01},
    urldate = {2020-05-01},
    journal = {IEEE Journal of Solid-State Circuits},
    volume = {55},
    number = {5},
    pages = {1386-1400},
    keywords = {芯片设计},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Dong, Zuo-Yuan; Peng, Ya-Kang; Yu, Hao; Li, Wei-Jian; Hu, Jia-Wei; Luo, Chen; Wu, Xing; Chen, Xiao-Jia
    Role of Optical Phonons in Bulk Molybdenum Diselenide Thermal Properties Probed by Advanced Raman Spectroscopy
    In: Physica Status Solidi B-Basic Solid State Physics, vol. 257, no. 9, 2020, ISSN: 0370-1972.

    Links | BibTeX | 标签: 传感器 原位电镜


    @article{RN173,
    title = {Role of Optical Phonons in Bulk Molybdenum Diselenide Thermal Properties Probed by Advanced Raman Spectroscopy},
    author = {Zuo-Yuan Dong and Ya-Kang Peng and Hao Yu and Wei-Jian Li and Jia-Wei Hu and Chen Luo and Xing Wu and Xiao-Jia Chen},
    doi = {10.1002/pssb.202000251},
    issn = {0370-1972},
    year = {2020},
    date = {2020-01-01},
    urldate = {2020-01-01},
    journal = {Physica Status Solidi B-Basic Solid State Physics},
    volume = {257},
    number = {9},
    keywords = {传感器, 原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Liang, Fang; Wang, Chaolun; Luo, Chen; Xia, Yin; Wang, Yang; Xu, Mengjian; Wang, Hailu; Wang, Teng; Zhu, Yicheng; Wu, Peisong; Ye, Jiafu; Mu, Gang; Zhu, He; Wu, Xing
    Ferromagnetic CoSe Broadband Photodetector at Room Temperature
    In: Nanotechnology, vol. 31, no. 37, 2020, ISSN: 0957-4484./

    Links | BibTeX | 标签: 传感器


    @article{RN174,
    title = {Ferromagnetic CoSe Broadband Photodetector at Room Temperature},
    author = {Fang Liang and Chaolun Wang and Chen Luo and Yin Xia and Yang Wang and Mengjian Xu and Hailu Wang and Teng Wang and Yicheng Zhu and Peisong Wu and Jiafu Ye and Gang Mu and He Zhu and Xing Wu},
    doi = {10.1088/1361-6528/ab9867},
    issn = {0957-4484},
    year = {2020},
    date = {2020-01-01},
    urldate = {2020-01-01},
    journal = {Nanotechnology},
    volume = {31},
    number = {37},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Luo, Zewei; Li, Xinming; Li, Quanling; Tian, Xiyue; Fan, Tianyi; Wang, Chaolun; Wu, Xing; Shen, Guozhen
    In Situ Dynamic Manipulation of Graphene Strain Sensor with Drastically Sensing Performance Enhancement
    In: Advanced Electronic Materials, vol. 6, no. 6, 2020, ISSN: 2199-160X./

    Links | BibTeX | 标签: 原位电镜 石墨烯


    @article{RN146,
    title = {In Situ Dynamic Manipulation of Graphene Strain Sensor with Drastically Sensing Performance Enhancement},
    author = {Zewei Luo and Xinming Li and Quanling Li and Xiyue Tian and Tianyi Fan and Chaolun Wang and Xing Wu and Guozhen Shen},
    doi = {10.1002/aelm.202000269},
    issn = {2199-160X},
    year = {2020},
    date = {2020-01-01},
    urldate = {2020-01-01},
    journal = {Advanced Electronic Materials},
    volume = {6},
    number = {6},
    keywords = {原位电镜, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Luo, Zewei; Tian, Xiyue; Fan, Jichen; Yang, Xin; Fan, Tianyi; Wang, Chaolun; Wu, Xing; Chu, Junhao
    Novel Flexible Resistive Sensors in the Age of Intelligence
    In: Materials Review, vol. 34, no. 1A, pp. 1069-1079, 2020, ISSN: 1005-023X.

    Links | BibTeX | 标签: 原位电镜 石墨烯

    <Go to ISI>://CSCD:6704893


    @article{RN147,
    title = {Novel Flexible Resistive Sensors in the Age of Intelligence},
    author = {Zewei Luo and Xiyue Tian and Jichen Fan and Xin Yang and Tianyi Fan and Chaolun Wang and Xing Wu and Junhao Chu},
    url = {<Go to ISI>://CSCD:6704893},
    issn = {1005-023X},
    year  = {2020},
    date = {2020-01-01},
    urldate = {2020-01-01},
    journal = {Materials Review},
    volume = {34},
    number = {1A},
    pages = {1069-1079},
    keywords = {原位电镜, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Ma, Zhanhong; Almalki, Abdulaziz; Yang, Xin; Wu, Xing; Xi, Xin; Li, Jing; Lin, Shan; Li, Xiaodong; Alotaibi, Saud; Huwayz, Maryam Al; Henini, Mohamed; Zhao, Lixia
    The Influence of Point Defects on AlGaN-Based Deep Ultraviolet LEDs
    In: Journal of Alloys and Compounds, vol. 845, 2020, ISSN: 0925-8388.

    Links | BibTeX | 标签: 原位电镜 可靠性

    <Go to ISI>://WOS:000566717800013

    doi:10.1016/j.jallcom.2020.156177


    @article{RN142,
    title = {The Influence of Point Defects on AlGaN-Based Deep Ultraviolet LEDs},
    author = {Zhanhong Ma and Abdulaziz Almalki and Xin Yang and Xing Wu and Xin Xi and Jing Li and Shan Lin and Xiaodong Li and Saud Alotaibi and Maryam Al Huwayz and Mohamed Henini and Lixia Zhao},
    url = {<Go to ISI>://WOS:000566717800013},
    doi = {10.1016/j.jallcom.2020.156177},
    issn = {0925-8388},
    year  = {2020},
    date = {2020-01-01},
    urldate = {2020-01-01},
    journal = {Journal of Alloys and Compounds},
    volume = {845},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Sun, Xingdan; Li, Wanying; Wang, Xiao; Sui, Qi; Zhang, Tongyao; Wang, Zhi; Liu, Long; Li, Da; Feng, Shun; Zhong, Siyu; Wang, Hanwen; Bouchiat, Vincent; Regueiro, Manuel Nunez; Rougemaille, Nicolas; Coraux, Johann; Purbawati, Anike; Hadj-Azzem, Abdellali; Wang, Zhenhua; Dong, Baojuan; Wu, Xing; Yang, Teng; Yu, Guoqiang; Wang, Bingwu; Han, Zheng; Han, Xiufeng; Zhang, Zhidong
    Room Temperature Ferromagnetism in Ultra-Thin Van Der Waals Crystals of 1T-CrTe2
    In: Nano Research, vol. 13, no. 12, pp. 3358-3363, 2020, ISSN: 1998-0124.

    Links | BibTeX | 标签: 传感器

    <Go to ISI>://WOS:000563729000002

    doi:10.1007/s12274-020-3021-4


    @article{RN171,
    title = {Room Temperature Ferromagnetism in Ultra-Thin Van Der Waals Crystals of 1T-CrTe2},
    author = {Xingdan Sun and Wanying Li and Xiao Wang and Qi Sui and Tongyao Zhang and Zhi Wang and Long Liu and Da Li and Shun Feng and Siyu Zhong and Hanwen Wang and Vincent Bouchiat and Manuel Nunez Regueiro and Nicolas Rougemaille and Johann Coraux and Anike Purbawati and Abdellali Hadj-Azzem and Zhenhua Wang and Baojuan Dong and Xing Wu and Teng Yang and Guoqiang Yu and Bingwu Wang and Zheng Han and Xiufeng Han and Zhidong Zhang},
    url = {<Go to ISI>://WOS:000563729000002},
    doi = {10.1007/s12274-020-3021-4},
    issn = {1998-0124},
    year  = {2020},
    date = {2020-01-01},
    urldate = {2020-01-01},
    journal = {Nano Research},
    volume = {13},
    number = {12},
    pages = {3358-3363},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Wang, Chaolun; Wu, Xing; Zhang, Xuan; Mu, Gang; Li, Panlin; Luo, Chen; Xu, Hejun; Di, Zengfeng
    Iron-Doped VSe2 Nanosheets for Enhanced Hydrogen Evolution Reaction
    In: Applied Physics Letters, vol. 116, no. 22, 2020, ISSN: 0003-6951./

    Links | BibTeX | 标签: 原位电镜


    @article{RN144,
    title = {Iron-Doped VSe2 Nanosheets for Enhanced Hydrogen Evolution Reaction},
    author = {Chaolun Wang and Xing Wu and Xuan Zhang and Gang Mu and Panlin Li and Chen Luo and Hejun Xu and Zengfeng Di},
    doi = {10.1063/5.0008092},
    issn = {0003-6951},
    year = {2020},
    date = {2020-01-01},
    urldate = {2020-01-01},
    journal = {Applied Physics Letters},
    volume = {116},
    number = {22},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Xia, Yin; Wei, Lujun; Deng, Jie; Zong, Lingyi; Wang, Chaolun; Chen, Xinyu; Liang, Fang; Luo, Chen; Bao, Wenzhong; Xu, Zihan; Zhou, Jing; Pu, Yong; Wu, Xing
    Tuning Electrical and Optical Properties of MoSe2 Transistors via Elemental Doping
    In: Advanced Materials Technologies, vol. 5, no. 7, 2020, ISSN: 2365-709X.

    Links | BibTeX | 标签: 传感器    


       

    @article{RN175,
    title = {Tuning Electrical and Optical Properties of MoSe2 Transistors via Elemental Doping},
    author = {Yin Xia and Lujun Wei and Jie Deng and Lingyi Zong and Chaolun Wang and Xinyu Chen and Fang Liang and Chen Luo and Wenzhong Bao and Zihan Xu and Jing Zhou and Yong Pu and Xing Wu},
    doi = {10.1002/admt.202000307},
    issn = {2365-709X},
    year = {2020},
    date = {2020-01-01},
    urldate = {2020-01-01},
    journal = {Advanced Materials Technologies},
    volume = {5},
    number = {7},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }
       


       


    Journal Article

    Lyu, Liangjian; Wang, Yu; Chen, Chixiao; Shi, C. -J. Richard
    A 0.6V 1.07 μW/Channel Neural Interface IC Using Level-Shifted Feedback
    In: Integration, vol. 70, pp. 51-59, 2020, ISSN: 0167-9260.

    Links | BibTeX | 标签: 芯片设计


    @article{LLyuCShi20b,
    title = {A 0.6V 1.07 μW/Channel Neural Interface IC Using Level-Shifted Feedback},
    author = {Liangjian Lyu and Yu Wang and Chixiao Chen and C. -J. Richard Shi},
    url = {https://www.sciencedirect.com/science/article/pii/S0167926019302974},
    doi = {https://doi.org/10.1016/j.vlsi.2019.11.001},
    issn = {0167-9260},
    year = {2020},
    date = {2020-01-01},
    urldate = {2020-01-01},
    journal = {Integration},
    volume = {70},
    pages = {51-59},
    keywords = {芯片设计},
    pubstate = {published},
    tppubtype = {article}
    }



    Conference

    Yin, Xia; Chen, Luo; Xin, Yang; Chaolun, Wang; Wenzhong, Bao; Xing, Wu
    Thermal Reliability Study of Graphene-Based Planar RRAM
    2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) , 2020.

    Links | BibTeX | 标签: 石墨烯


    @conference{RN190,
    title = {Thermal Reliability Study of Graphene-Based Planar RRAM},
    author = {Xia Yin and Luo Chen and Yang Xin and Wang Chaolun and Bao Wenzhong and Wu Xing},
    doi = {10.1109/ipfa49335.2020.9261033},
    year = {2020},
    date = {2020-01-01},
    urldate = {2020-01-01},
    booktitle = {2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) },
    journal = {2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)},
    pages = {4 pp.-4 pp.},
    keywords = {石墨烯},
    pubstate = {published},
    tppubtype = {conference}
    }



  • 2019

    Journal Article

    Zhong Y, Xie G, Mao F, Ding J, Yue F, Chen S, Lu X, Jing C, Chu J H
    Thin-wall cyclic olefin copolymer tube waveguide for broadband terahertz transmission
    Optical Materials, 2019, 98: 109490.

    | 标签: 传感器

    Journal Article

    Zhou B, Gong S-J, Jiang K, Xu L, Zhu L, Shang L, Li Y, Hu Z, Chu J H
    Ferroelectric and dipole control of band alignment in the two dimensional InTe/In2Se3 heterostructure
    Journal of Physics: Condensed Matter, 2019, 32: 055703.

    | 标签: 传感器

    Journal Article

    Zhou B, Gong S-J, Jiang K, Xu L, Shang L, Zhang J, Hu Z, Chu J H
    A type-II GaSe/GeS heterobilayer with strain enhanced photovoltaic properties and external electric field effects
    Journal of Materials Chemistry C, 2020, 8: 89-97.

    | 标签: 传感器

    Journal Article

    Yang J, Yin W, Zhou B, Cui A, Xu L, Zhang D, Li W, Hu Z, Chu J H
    Composition dependence of optical properties and band structures in p-type Ni-doped CuO films: Spectroscopic experiment and first-principles calculation
    The Journal of Physical Chemistry C, 2019, 123: 27165-27171.

    | 标签: 传感器

    Journal Article

    Xu L, Zhang P, Jiang H, Wang X, Chen F, Hu Z, Gong Y, Shang L, Zhang J, Jiang K, Chu J H
    Large‐scale growth and field‐effect transistors electrical engineering of atomic‐layer SnS2
    Small, 2019, 15: 1904116.

    | 标签: 传感器

    Journal Article

    Xue J, Hu X, Guo Y, Weng G, Jiang J, Chen S, Zhu Z, Chu J H, Akiyama H
    Diagnosis of perovskite solar cells through absolute electroluminescence-efficiency measurements
    Frontiers in Physics, 2019, 7: 166.

    | 标签: 传感器

    Journal Article

    Fu X, Li G, Zhang W, Zhong Y, Lu X, Yue F, Jing C, Chu J H
    Transmission behaviors of metallic ATR mid-infrared hollow waveguide at low temperature and performance improvement
    Optics Communications, 2020, 458: 124821.

    | 标签: 传感器

    Journal Article

    Wu C, Xu Y, Ao L, Jiang K, Shang L, Li Y, Hu Z, Chu J H
    Robust three-dimensional porous rGO aerogel anchored with ultra-fine α-Fe2O3 nanoparticles exhibit dominated pseudocapacitance behavior for superior lithium storage
    Journal of Alloys Compounds, 2020, 816: 152627.

    | 标签: 传感器

    Journal Article

    Chen Y, Yin C, Wang X, Jiang Y, Wang H, Wu B, Shen H, Lin T, Hu W, Meng X, Du P, Chu J H, Wang Z, Wang J
    Multimode Signal Processor Unit Based on the Ambipolar WSe2–Cr Schottky Junction
    ACS applied materials interfaces, 2019, 11: 38895-38901.

    | 标签: 传感器

    Journal Article

    Wang X, Cui A, Chen F, Xu L, Hu Z, Jiang K, Shang L, Chu J H
    Probing effective out‐of‐plane piezoelectricity in van der waals layered materials induced by flexoelectricity
    Small, 2019, 15: 1903106.

    | 标签: 传感器

    Journal Article

    Xu Y, Wu C, Ao L, Jiang K, Shang L, Li Y, Hu Z, Chu J H
    Three-dimensional porous Co3O4–CoO@ GO composite combined with N-doped carbon for superior lithium storage
    Nanotechnology, 2019, 30: 425404.

    | 标签: 传感器

    Journal Article

    Yang N, Ren Z-Q, Hu C-Z, Guan Z, Tian B-B, Zhong N, Xiang P-H, Duan C-G, Chu J H
    Ultra-wide temperature electronic synapses based on self-rectifying ferroelectric memristors
    Nanotechnology, 2019, 30: 464001.

    | 标签: 传感器

    Journal Article

    Zhang W, Li G, She C, Cheng J, Li H, Liu S, Jing C, Cheng Y, Chu J H
    High performance tube sensor based on PANI/Eu3+ nanofiber for low-volume NH3 detection
    Analytica chimica acta, 2020, 1093: 115-122.

    | 标签: 传感器

    Journal Article

    Wu S, Wu G, Wang X, Chen Y, Lin T, Shen H, Hu W, Meng X, Wang J, Chu J H
    A gate-free MoS2 phototransistor assisted by ferroelectrics
    Journal of Semiconductors, 2019, 40: 092002.

    | 标签: 传感器

    Journal Article

    Lu Q, Guo H, Zhang Y, Tang X, Lei W, Qi R, Chu J H, Li D, Zhao Q
    Graphene oxide-Fe3O4 nanocomposite magnetic solid phase extraction followed by UHPLC-MS/MS for highly sensitive determination of eight psychoactive drugs in urine samples
    Talanta, 2020, 206: 120212.

    | 标签: 传感器

    Journal Article

    Hu X, Tao J, Wang Y, Xue J, Weng G, Zhang C, Chen S, Zhu Z, Chu J H
    5.91%-efficient Sb2Se3 solar cells with a radio-frequency magnetron-sputtered CdS buffer layer
    Applied Materials Today, 2019, 16: 367-374.

    | 标签: 传感器

    Journal Article

    Lin L, Ma Y, Wu J, Pang F, Ge J, Sui S, Yao Y, Qi R, Cheng Y, Duan C-g, Chu J H, Huang R
    Origin of photocatalytic activity in Ti4+/Ti3+ core–shell titanium oxide nanocrystals
    The Journal of Physical Chemistry C, 2019, 123: 20949-20959.

    | 标签: 传感器

    Journal Article

    Jiang C, Zhang Y, Tian B, Luo C, Zhong N, Wang J, Meng X, Peng H, Duan C-G, Chu J H
    Efficient two-terminal artificial synapse based on a network of functionalized conducting polymer nanowires
    Journal of Materials Chemistry C, 2019, 7: 9933-9938.

    | 标签: 传感器

    Journal Article

    Cui A, Ye Y, Zheng L, Jiang K, Zhu L, Shang L, Li Y, Hu Z, Chu J H
    Exploring lattice symmetry evolution with discontinuous phase transition by Raman scattering criteria: The single-crystalline (K, Na) NbO 3 model system
    Physical Review B, 2019, 100: 024102.

    | 标签: 传感器

    Journal Article

    Wu C, Zhou W, Yin Y, Ma W, Jiang L, Huang Z, Chu J H
    Long wavelength infrared detection based on Mn-Co-Ni-O thin films with dielectric-metal-dielectric absorptive structures
    Infrared Physics Technology, 2019, 102: 102987.

    | 标签: 传感器

    Journal Article

    Wang X, Shen H, Chen Y, Wu G, Wang P, Xia H, Lin T, Zhou P, Hu W, Meng X, Chu J H, Wang J
    Multimechanism synergistic photodetectors with ultrabroad spectrum response from 375 nm to 10 µm
    Advanced science, 2019, 6: 1901050.

    | 标签: 传感器

    Journal Article

    Huang F, Li M, Xu Y, Cui A, Li W, Xu Y, Chu J H, Noh Y-Y
    Understanding thickness-dependent electrical characteristics in conjugated polymer transistors with top-gate staggered structure
    IEEE Transactions on Electron Devices, 2019, 66: 2723-2728.

    | 标签: 传感器

    Journal Article

    Zhang S, Wang X, Chen Y, Wu G, Tang Y, Zhu L, Wang H, Jiang W, Sun L, Lin T, Shen H, Hu W, Ge J, Wang J, Meng X, Chu J H
    Ultrasensitive hybrid MoS2–ZnCdSe quantum dot photodetectors with high gain
    ACS applied materials interfaces, 2019, 11: 23667-23672.

    | 标签: 传感器

    Journal Article

    Wu J, Hu T, Yin Y, Li J, Zhou W, Gao Y, Jiang L, Huang Z, Chu J H
    Current-controlled negative differential resistance in small-polaron hopping system
    AIP Advances, 2019, 9

    | 标签: 传感器

    Journal Article

    Wang F, Cui A, Sun H, Zhou B, Xu L, Jiang K, Shang L, Hu Z, Chu J H
    Electronic bandgap manipulation of monolayer WS2 by vertically coupled insulated Mg (OH) 2 layers
    Journal of Alloys Compounds, 2019, 785: 156-162.

    | 标签: 传感器

    Journal Article

    Cui A, Zhu L, Jiang K, Xu L, Hu Z, Xu G, Sun H, Huang Z, Poddar R, Chu J H
    Probing Nanoscale Electromechanical Behaviors of Relaxor Ferroelectrics in Highly Conductive Liquid Environments
    Physical Review Applied, 2019, 11: 054037.

    | 标签: 传感器

    Journal Article

    Li Y, Bian M, Zhang N, Bai W, Yang J, Zhang Y, Tang X, Chu J H
    Mn-doping composition dependence of the structures, electrical and magnetic properties, and domain structure/switching of Aurivillius Bi5Ti3FeO15 films
    Ceramics International, 2019, 45: 8634-8639.

    | 标签: 传感器

    Journal Article

    Tao J, Hu X, Xue J, Wang Y, Weng G, Chen S, Zhu Z, Chu J H
    Investigation of electronic transport mechanisms in Sb2Se3 thin-film solar cells
    Solar Energy Materials Solar Cells, 2019, 197: 1-6.

    | 标签: 传感器

    Journal Article

    Weng G, Tian J, Chen S, Xue J, Yan J, Hu X, Chen S, Zhu Z, Chu J H
    Giant reduction of the random lasing threshold in CH 3 NH 3 PbBr 3 perovskite thin films by using a patterned sapphire substrate
    Nanoscale, 2019, 11: 10636-10645.

    | 标签: 传感器

    Journal Article

    Tao J, Hu X, Guo Y, Hong J, Li K, Jiang J, Chen S, Jing C, Yue F, Yang P, Zhang C, Wu Z, Tang J, Chu J H
    Solution-processed SnO2 interfacial layer for highly efficient Sb2Se3 thin film solar cells
    Nano Energy, 2019, 60: 802-809.

    | 标签: 传感器

    Journal Article

    Huang J, Li Y, Gao Y, Li G, Huang Z, Chu J, Andreev Y
    High efficient terahertz generation from cryogenic gallium phosphide based on collinear difference frequency
    Fifth International Symposium on Laser Interaction with Matter, SPIE, 2019, 11046: 726-732.

    | 标签: 传感器

    Journal Article

    Cui A, De Wolf P, Ye Y, Hu Z, Dujardin A, Huang Z, Jiang K, Shang L, Ye M, Sun H, Chu J H
    Probing electromechanical behaviors by datacube piezoresponse force microscopy in ambient and aqueous environments
    Nanotechnology, 2019, 30: 235701.

    | 标签: 传感器

    Journal Article

    Luo Z, Hu X, Tian X, Luo C, Xu H, Li Q, Li Q, Zhang J, Qiao F, Wu X, E. B V, Chu J H
    Structure-property relationships in graphene-based strain and pressure sensors for potential artificial intelligence applications
    Sensors, 2019, 19: 1250.

    | 标签: 传感器

    Journal Article

    Zhang Q, Deng H, Yu J, Tao J, Sun L, Yang P, Chu J H
    Grain growth enhancing through preheating treatment of a sputtered stacked metallic precursor for Cu (In, Al) Se2 thin film solar cells application
    Materials Science Engineering: B, 2019, 242: 31-36.

    | 标签: 传感器

    Journal Article

    Yang Y, Yang J, Yin W, Huang F, Cui A, Zhang D, Li W, Hu Z, Chu J H
    Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors
    Applied Surface Science, 2019, 481: 632-636.

    | 标签: 传感器

    Journal Article

    Guan Z, Yang N, Ren Z-Q, Zhong N, Huang R, Chen W-X, Tian B-B, Tang X-D, Xiang P-H, Duan C-G, Chu J H
    Mediation in the second-order synaptic emulator with conductive atomic force microscopy
    Nanoscale, 2019, 11: 8744-8751.

    | 标签: 传感器

    Journal Article

    Guo Y, Zhao F, Tao J, Jiang J, Zhang J, Yang J, Hu Z, Chu J H
    Efficient and hole‐transporting‐layer‐free CsPbI2Br planar heterojunction perovskite solar cells through rubidium passivation
    ChemSusChem, 2019, 12: 983-989.

    | 标签: 传感器

    Journal Article

    Hu X, Chen T, Hong J, Chen S, Weng G, Zhu Z, Chu J H
    Diagnosis of GaAs solar-cell resistance via absolute electroluminescence imaging and distributed circuit modeling
    Energy, 2019, 174: 85-90.

    | 标签: 传感器

    Journal Article

    Yu J, Deng H, Zhang Q, Tao J, Sun L, Yang P, Chu J H
    The role of tuning Se/(S+ Se) ratio in the improvement of Cu2MnSn (S, Se) 4 thin films properties and photovoltaic device performance
    Solar Energy, 2019, 179: 279-285.

    | 标签: 传感器

    Journal Article

    Jiang C, Fu H, Han Y, Li D, Lin H, Li B, Meng X, Peng H, Chu J H
    Tuning the crystal structure and luminescence of pyrrolidinium manganese halides via halide ions
    Crystal Research Technology, 2019, 54: 1800236.

    | 标签: 传感器

    Journal Article

    Tian B, Liu L, Yan M, Wang J, Zhao Q, Zhong N, Xiang P, Sun L, Peng H, Shen H, Lin T, Dkhil B, Meng X, Chu J H, Tang X, Duan C
    A Robust Artificial Synapse Based on Organic Ferroelectric Polymer
    Advanced Electronic Materials, 2019, 5: 1800600.

    | 标签: 传感器

    Conference

    Lyu, Liangjian; Ye, Dawei; Shi, C. -J. Richard
    A 340nW/Channel Neural Recording Analog Front-End using Replica-Biasing LNAs to Tolerate 200mVpp Interfere from 350mV Power Supply
    2019 IEEE International Symposium on Circuits and Systems (ISCAS), 2019, ISSN: 2158-1525.

    Links | BibTeX | 标签: 传感器 芯片设计


    @conference{LLyuCShi19,
    title = {A 340nW/Channel Neural Recording Analog Front-End using Replica-Biasing LNAs to Tolerate 200mVpp Interfere from 350mV Power Supply},
    author = {Liangjian Lyu and Dawei Ye and C. -J. Richard Shi},
    doi = {10.1109/ISCAS.2019.8702781},
    issn = {2158-1525},
    year = {2019},
    date = {2019-05-01},
    urldate = {2019-05-01},
    booktitle = {2019 IEEE International Symposium on Circuits and Systems (ISCAS)},
    pages = {1-4},
    keywords = {传感器, 芯片设计},
    pubstate = {published},
    tppubtype = {conference}
    }



    Conference

    Ye, Dawei; Xu, Rongjin; Lyu, Liangjian; Shi, C. -J. Richard
    A 2.46GHz, −88dBm Sensitivity CMOS Passive Mixer-First Nonlinear Receiver with 50dB Tolerance to In-Band Interferer
    2019 IEEE International Symposium on Circuits and Systems (ISCAS), 2019, ISSN: 2158-1525.

    Links | BibTeX | 标签: 芯片设计


    @conference{DYeCShi19,
    title = {A 2.46GHz, −88dBm Sensitivity CMOS Passive Mixer-First Nonlinear Receiver with 50dB Tolerance to In-Band Interferer},
    author = {Dawei Ye and Rongjin Xu and Liangjian Lyu and C. -J. Richard Shi},
    doi = {10.1109/ISCAS.2019.8702464},
    issn = {2158-1525},
    year = {2019},
    date = {2019-05-01},
    urldate = {2019-05-01},
    booktitle = {2019 IEEE International Symposium on Circuits and Systems (ISCAS)},
    pages = {1-4},
    keywords = {芯片设计},
    pubstate = {published},
    tppubtype = {conference}
    }



    Journal Article

    Wu, F.; Li, Q.; Wang, P.; Xia, H.; Wang, Z.; Wang, Y.; Luo, M.; Chen, L.; Chen, F. S.; Miao, J. S.; Chen, X. S.; Lu, W.; Shan, C. X.; Pan, A. L.; Wu, X.; Ren, W. C.; Jariwala, D.; Hu, W. D.
    High Efficiency and Fast Van Der Waals Hetero-photodiodes with A Unilateral Depletion Region
    In: Nature Communications, vol. 10, 2019, ISSN: 2041-1723.

    Links | BibTeX


    @article{RN134,
    title = {High Efficiency and Fast Van Der Waals Hetero-photodiodes with A Unilateral Depletion Region},
    author = {F. Wu and Q. Li and P. Wang and H. Xia and Z. Wang and Y. Wang and M. Luo and L. Chen and F. S. Chen and J. S. Miao and X. S. Chen and W. Lu and C. X. Shan and A. L. Pan and X. Wu and W. C. Ren and D. Jariwala and W. D. Hu},
    doi = {10.1038/s41467-019-12707-3},
    issn = {2041-1723},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Nature Communications},
    volume = {10},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Zheyu, Liu; Zichen, Fan; Qi, Wei; Xing, Wu; Fei, Qiao; Ping, Jin; Xin-jun, Liu; Chengliang, Liu; Huazhong, Yang
    Design of Switched-Current Based Low-Power PIM Vision System for IoT Applications
    In: 2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), pp. 181-6, 2019, (2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) 15-17 July 2019 Miami, FL, USA 0 978-1-7281-3391-1).

    Links | BibTeX


    @article{RN191,
    title = {Design of Switched-Current Based Low-Power PIM Vision System for IoT Applications},
    author = {Liu Zheyu and Fan Zichen and Wei Qi and Wu Xing and Qiao Fei and Jin Ping and Liu Xin-jun and Liu Chengliang and Yang Huazhong},
    url = {<Go to ISI>://INSPEC:18993946},
    doi = {10.1109/isvlsi.2019.00041},
    year  = {2019},
    date = {2019-01-01},
    journal = {2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)},
    pages = {181-6},
    note = {2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) 
    15-17 July 2019 
    Miami, FL, USA 
    0 
    978-1-7281-3391-1},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }



    Conference

    Changlu, Liu; Tianxiang, Lan; Qin, Li; Kaige, Jia; Yidian, Fan; Xing, Wu; Fei, Qiao; Wei, Qi; Xin-Jun, Liu; Huazhong, Yang
    Energy-efficient Analog Processing Architecture for Direction of Arrival with Microphone Array
    2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) , 2019.

    Links | BibTeX | 标签: 芯片设计


    @conference{RN193,
    title = {Energy-efficient Analog Processing Architecture for Direction of Arrival with Microphone Array},
    author = {Liu Changlu and Lan Tianxiang and Li Qin and Jia Kaige and Fan Yidian and Wu Xing and Qiao Fei and Qi Wei and Liu Xin-Jun and Yang Huazhong},
    doi = {10.1109/isvlsi.2019.00097},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    booktitle = {2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) },
    journal = {2019 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)},
    pages = {507-12},
    keywords = {芯片设计},
    pubstate = {published},
    tppubtype = {conference}
    }



    Conference

    Lyu, Liangjian; Wang, Yu; Chen, Chixiao; Shi, C. -J. Richard
    A Low-Voltage Low-Power Multi-Channel Neural Interface IC Using Level-Shifted Feedback Technology
    Proceedings of the 24th Asia and South Pacific Design Automation Conference, 2019, ISBN: 9781450360074.

    Links | BibTeX | 标签: 传感器 芯片设计


    @conference{LLyuCShi19a,
    title = {A Low-Voltage Low-Power Multi-Channel Neural Interface IC Using Level-Shifted Feedback Technology},
    author = {Liangjian Lyu and Yu Wang and Chixiao Chen and C. -J. Richard Shi},
    doi = {10.1145/3287624.3287757},
    isbn = {9781450360074},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    booktitle = {Proceedings of the 24th Asia and South Pacific Design Automation Conference},
    pages = {13–14},
    keywords = {传感器, 芯片设计},
    pubstate = {published},
    tppubtype = {conference}
    }



    Journal Article

    Zhu, Ying; Ning, Hongkai; Yu, Zhihao; Pan, Qiang; Zhang, Chunchen; Luo, Chen; Tu, Xuecou; You, Yumeng; Wang, Peng; Wu, Xing; Shi, Yi; Wang, Xinran
    Thickness-Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1-xO2 Thin Films through Interfacial Bound Charges
    In: Advanced Electronic Materials, vol. 5, no. 8, 2019, ISSN: 2199-160X.

    Links | BibTeX | 标签: 原位电镜 可靠性


    @article{RN180,
    title = {Thickness-Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1-xO2 Thin Films through Interfacial Bound Charges},
    author = {Ying Zhu and Hongkai Ning and Zhihao Yu and Qiang Pan and Chunchen Zhang and Chen Luo and Xuecou Tu and Yumeng You and Peng Wang and Xing Wu and Yi Shi and Xinran Wang},
    doi = {10.1002/aelm.201900554},
    issn = {2199-160X},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Advanced Electronic Materials},
    volume = {5},
    number = {8},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Zhang, Jiayan; Yu, Ye; Wang, Peng; Luo, Chen; Wu, Xing; Sun, Ziqi; Wang, Jianlu; Hu, Wei Da; Shen, Guozhen
    Characterization of Atomic Defects on the Photoluminescence in Two-Dimensional Materials Using Transmission Electron Microscope
    In: Infomat, vol. 1, no. 1, pp. 85-97, 2019.

    Links | BibTeX | 标签: 原位电镜


    @article{RN157,
    title = {Characterization of Atomic Defects on the Photoluminescence in Two-Dimensional Materials Using Transmission Electron Microscope},
    author = {Jiayan Zhang and Ye Yu and Peng Wang and Chen Luo and Xing Wu and Ziqi Sun and Jianlu Wang and Wei Da Hu and Guozhen Shen},
    doi = {10.1002/inf2.12002},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Infomat},
    volume = {1},
    number = {1},
    pages = {85-97},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Yu, Kaihao; Xu, Tao; Wu, Xing; Wang, Wen; Zhang, Hui; Zhang, Qiubo; Tang, Luping; Sun, Litao
    In Situ Observation of Crystalline Silicon Growth from SiO2 Atomic Scale
    In: Research, vol. 2019, 2019.

    Links | BibTeX | 标签: 原位电镜


    @article{RN177,
    title = {In Situ Observation of Crystalline Silicon Growth from SiO2 Atomic Scale},
    author = {Kaihao Yu and Tao Xu and Xing Wu and Wen Wang and Hui Zhang and Qiubo Zhang and Luping Tang and Litao Sun},
    doi = {10.34133/2019/3289247},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Research},
    volume = {2019},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Xu, Hu; Zhang, Haima; Liu, Yawen; Zhang, Simeng; Sun, Yangye; Guo, Zhongxun; Sheng, Yaochen; Wang, Xudong; Luo, Chen; Wu, Xing; Wang, Jianlu; Hu, Weida; Xu, Zihan; Sun, Qingqing; Zhou, Peng; Shi, Jing; Sun, Zhengzong; Zhang, David Wei; Bao, Wenzhong
    Controlled Doping of Wafer-Scale PtSe2 Films for Device Application
    In: Advanced Functional Materials, vol. 29, no. 4, 2019, ISSN: 1616-301X.

    Links | BibTeX | 标签: 原位电镜可靠性


    @article{RN161,
    title = {Controlled Doping of Wafer-Scale PtSe2 Films for Device Application},
    author = {Hu Xu and Haima Zhang and Yawen Liu and Simeng Zhang and Yangye Sun and Zhongxun Guo and Yaochen Sheng and Xudong Wang and Chen Luo and Xing Wu and Jianlu Wang and Weida Hu and Zihan Xu and Qingqing Sun and Peng Zhou and Jing Shi and Zhengzong Sun and David Wei Zhang and Wenzhong Bao},
    doi = {10.1002/adfm.201805614},
    issn = {1616-301X},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Advanced Functional Materials},
    volume = {29},
    number = {4},
    keywords = {传感器, 原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Xu, H.; Wu, X.; Tian, X.; Li, J.; Chu, J.; Sun, L.
    Dynamic Structure-Properties Characterization and Manipulation in Advanced Nanodevices
    In: Materials Today Nano, vol. 7, 2019, ISSN: 2588-8420.

    Links | BibTeX | 标签: 原位电镜 可靠性


    @article{RN152,
    title = {Dynamic Structure-Properties Characterization and Manipulation in Advanced Nanodevices},
    author = {H. Xu and X. Wu and X. Tian and J. Li and J. Chu and L. Sun},
    doi = {10.1016/j.mtnano.2019.100042},
    issn = {2588-8420},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Materials Today Nano},
    volume = {7},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Wu, Feng; Xia, Hui; Sun, Haiding; Zhang, Junwei; Gong, Fan; Wang, Zhen; Chen, Long; Wang, Peng; Long, Mingsheng; Wu, Xing; Wang, Jianlu; Ren, Wencai; Chen, Xiaoshuang; Lu, Wei; Hu, Weida
    AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity
    In: Advanced Functional Materials, vol. 29, no. 12, 2019, ISSN: 1616-301X.

    Links | BibTeX | 标签: 传感器

    <Go to ISI>://WOS:000462624900024

    doi:10.1002/adfm.201900314


    @article{RN155,
    title = {AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity},
    author = {Feng Wu and Hui Xia and Haiding Sun and Junwei Zhang and Fan Gong and Zhen Wang and Long Chen and Peng Wang and Mingsheng Long and Xing Wu and Jianlu Wang and Wencai Ren and Xiaoshuang Chen and Wei Lu and Weida Hu},
    url = {<Go to ISI>://WOS:000462624900024},
    doi = {10.1002/adfm.201900314},
    issn = {1616-301X},
    year  = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Advanced Functional Materials},
    volume = {29},
    number = {12},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Bi, Hengchang; Wan, Shu; Cao, Xiehong; Wu, Xing; Zhou, Yilong; Yin, Kuibo; Su, Shi; Ma, Qinglang; Sindoro, Melinda; Zhu, Jingfang; Zhang, Zhuoran; Zhang, Hua; Sun, Litao
    A General and Facile Method for Preparation of Large-Scale Reduced Graphene Oxide Films with Controlled Structures
    In: Carbon, vol. 143, pp. 162-171, 2019, ISSN: 0008-6223.

    Links | BibTeX | 标签: 传感器 石墨烯

    <Go to ISI>://WOS:000456710500018

    doi:10.1016/j.carbon.2018.11.007


    @article{RN162,
    title = {VSe2/Carbon-Nanotube Compound for All Solid-State Flexible In-Plane Supercapacitor},
    author = {Chaolun Wang and Xing Wu and Hejun Xu and Yujin Zhu and Fang Liang and Chen Luo and Yin Xia and Xinying Xie and Jian Zhang and Chungang Duan},
    doi = {10.1063/1.5078555},
    issn = {0003-6951},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Applied Physics Letters},
    volume = {114},
    number = {2},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Wang, Chaolun; Wu, Xing; Xu, Hejun; Zhu, Yujin; Liang, Fang; Luo, Chen; Xia, Yin; Xie, Xinying; Zhang, Jian; Duan, Chungang
    VSe2/Carbon-Nanotube Compound for All Solid-State Flexible In-Plane Supercapacitor
    In: Applied Physics Letters, vol. 114, no. 2, 2019, ISSN: 0003-6951.

    Links | BibTeX | 标签: 传感器


    @article{RN162,
    title = {VSe2/Carbon-Nanotube Compound for All Solid-State Flexible In-Plane Supercapacitor},
    author = {Chaolun Wang and Xing Wu and Hejun Xu and Yujin Zhu and Fang Liang and Chen Luo and Yin Xia and Xinying Xie and Jian Zhang and Chungang Duan},
    doi = {10.1063/1.5078555},
    issn = {0003-6951},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Applied Physics Letters},
    volume = {114},
    number = {2},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Tian, Xiyue; Liu, Zheyu; Luo, Zewei; Wu, Xing; Qiao, Fei; Wang, Xuewen; Li, Guihong; Wu, Jing; Zhang, Jian; Liu, Zheng; Chu, Junhao
    Dual-Mode Sensor and Actuator to Learn Human-Hand Tracking and Grasping
    In: IEEE Transactions on Electron Devices, vol. 66, no. 12, pp. 5407-5410, 2019, ISSN: 0018-9383.

    Links | BibTeX | 标签: 传感器


    @article{RN149,
    title = {Dual-Mode Sensor and Actuator to Learn Human-Hand Tracking and Grasping},
    author = {Xiyue Tian and Zheyu Liu and Zewei Luo and Xing Wu and Fei Qiao and Xuewen Wang and Guihong Li and Jing Wu and Jian Zhang and Zheng Liu and Junhao Chu},
    doi = {10.1109/ted.2019.2949583},
    issn = {0018-9383},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {IEEE Transactions on Electron Devices},
    volume = {66},
    number = {12},
    pages = {5407-5410},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Luo, Zewei; Hu, Xiaotong; Tian, Xiyue; Luo, Chen; Xu, Hejun; Li, Quanling; Li, Qianhao; Zhang, Jian; Qiao, Fei; Wu, Xing; Borisenko, V. E.; Chu, Junhao
    Structure-Property Relationships in Graphene-Based Strain and Pressure Sensors for Potential Artificial Intelligence Applications
    In: Sensors, vol. 19, no. 5, 2019.

    Links | BibTeX | 标签: 传感器 原位电镜 石墨烯


    @article{RN158,
    title = {Structure-Property Relationships in Graphene-Based Strain and Pressure Sensors for Potential Artificial Intelligence Applications},
    author = {Zewei Luo and Xiaotong Hu and Xiyue Tian and Chen Luo and Hejun Xu and Quanling Li and Qianhao Li and Jian Zhang and Fei Qiao and Xing Wu and V. E. Borisenko and Junhao Chu},
    doi = {10.3390/s19051250},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Sensors},
    volume = {19},
    number = {5},
    keywords = {传感器, 原位电镜, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Luo, Chen; Yu, Kaihao; Wu, Xing; Sun, Litao
    In Situ Interfacial Manipulation of Metastable States Between Nucleation and Decomposition of Single Bismuth Nanoparticle
    In: Physica Status Solidi B-Basic Solid State Physics, vol. 256, no. 3, 2019, ISSN: 0370-1972.

    Links | BibTeX | 标签: 原位电镜


    @article{RN156,
    title = {In Situ Interfacial Manipulation of Metastable States Between Nucleation and Decomposition of Single Bismuth Nanoparticle},
    author = {Chen Luo and Kaihao Yu and Xing Wu and Litao Sun},
    doi = {10.1002/pssb.201800442},
    issn = {0370-1972},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Physica Status Solidi B-Basic Solid State Physics},
    volume = {256},
    number = {3},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Long, Mingsheng; Wang, Yang; Wang, Peng; Zhou, Xiaohao; Xia, Hui; Luo, Chen; Huang, Shenyang; Zhang, Guowei; Yan, Hugen; Fan, Zhiyong; Wu, Xing; Chen, Xiaoshuang; Lu, Wei; Hu, Weida
    Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability
    In: ACS Nano, vol. 13, no. 2, pp. 2511-2519, 2019, ISSN: 1936-0851.

    Links | BibTeX


    @article{RN159,
    title = {Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability},
    author = {Mingsheng Long and Yang Wang and Peng Wang and Xiaohao Zhou and Hui Xia and Chen Luo and Shenyang Huang and Guowei Zhang and Hugen Yan and Zhiyong Fan and Xing Wu and Xiaoshuang Chen and Wei Lu and Weida Hu},
    doi = {10.1021/acsnano.8b09476},
    issn = {1936-0851},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {ACS Nano},
    volume = {13},
    number = {2},
    pages = {2511-2519},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Liang, Fang; Xu, Hejun; Dong, Zuoyuan; Xie, Yafeng; Luo, Chen; Xia, Yin; Zhang, Jian; Wang, Jun; Wu, Xing
    Substrates and Interlayer Coupling Effects on Mo1-xWxSe2 Alloys
    In: Journal of Semiconductors, vol. 40, no. 6, 2019, ISSN: 1674-4926.

    Links | BibTeX | 标签:    


       

    @article{RN154,
    title = {Substrates and Interlayer Coupling Effects on Mo1-xWxSe2 Alloys},
    author = {Fang Liang and Hejun Xu and Zuoyuan Dong and Yafeng Xie and Chen Luo and Yin Xia and Jian Zhang and Jun Wang and Xing Wu},
    doi = {10.1088/1674-4926/40/6/062005},
    issn = {1674-4926},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Journal of Semiconductors},
    volume = {40},
    number = {6},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }
       


       


    Journal Article

    Li, Quanling; Zhang, Jiayan; Li, Qianhao; Li, Guihong; Tian, Xiyue; Luo, Zewei; Qiao, Fei; Wu, Xing; Zhang, Jian
    Review of Printed Electrodes for Flexible Devices
    In: Frontiers in Materials, vol. 5, 2019, ISSN: 2296-8016.

    Links | BibTeX | 标签: 传感器


    @article{RN160,
    title = {Review of Printed Electrodes for Flexible Devices},
    author = {Quanling Li and Jiayan Zhang and Qianhao Li and Guihong Li and Xiyue Tian and Zewei Luo and Fei Qiao and Xing Wu and Jian Zhang},
    doi = {10.3389/fmats.2018.00077},
    issn = {2296-8016},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Frontiers in Materials},
    volume = {5},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Lanza, Mario; Wong, H. S. Philip; Pop, Eric; Ielmini, Daniele; Strukov, Dimitri; Regan, Brian C.; Larcher, Luca; Villena, Marco A.; Yang, J. Joshua; Goux, Ludovic; Belmonte, Attilio; Yang, Yuchao; Puglisi, Francesco M.; Kang, Jinfeng; Magyari-Kope, Blanka; Yalon, Eilam; Kenyon, Anthony; Buckwell, Mark; Mehonic, Adnan; Shluger, Alexander; Li, Haitong; Hou, Tuo-Hung; Hudec, Boris; Akinwande, Deji; Ge, Ruijing; Ambrogio, Stefano; Roldan, Juan B.; Miranda, Enrique; Sune, Jordi; Pey, Kin Leong; Wu, Xing; Raghavan, Nagarajan; Wu, Ernest; Lu, Wei D.; Navarro, Gabriele; Zhang, Weidong; Wu, Huaqiang; Li, Runwei; Holleitner, Alexander; Wurstbauer, Ursula; Lemme, Max C.; Liu, Ming; Long, Shibing; Liu, Qi; Lv, Hangbing; Padovani, Andrea; Pavan, Paolo; Valov, Ilia; Jing, Xu; Han, Tingting; Zhu, Kaichen; Chen, Shaochuan; Hui, Fei; Shi, Yuanyuan
    Recommended Methods to Study Resistive Switching Devices
    In: Advanced Electronic Materials, vol. 5, no. 1, 2019, ISSN: 2199-160X.

    Links | BibTeX | 标签: 原位电镜 可靠性


    @article{RN183,
    title = {Recommended Methods to Study Resistive Switching Devices},
    author = {Mario Lanza and H. S. Philip Wong and Eric Pop and Daniele Ielmini and Dimitri Strukov and Brian C. Regan and Luca Larcher and Marco A. Villena and J. Joshua Yang and Ludovic Goux and Attilio Belmonte and Yuchao Yang and Francesco M. Puglisi and Jinfeng Kang and Blanka Magyari-Kope and Eilam Yalon and Anthony Kenyon and Mark Buckwell and Adnan Mehonic and Alexander Shluger and Haitong Li and Tuo-Hung Hou and Boris Hudec and Deji Akinwande and Ruijing Ge and Stefano Ambrogio and Juan B. Roldan and Enrique Miranda and Jordi Sune and Kin Leong Pey and Xing Wu and Nagarajan Raghavan and Ernest Wu and Wei D. Lu and Gabriele Navarro and Weidong Zhang and Huaqiang Wu and Runwei Li and Alexander Holleitner and Ursula Wurstbauer and Max C. Lemme and Ming Liu and Shibing Long and Qi Liu and Hangbing Lv and Andrea Padovani and Paolo Pavan and Ilia Valov and Xu Jing and Tingting Han and Kaichen Zhu and Shaochuan Chen and Fei Hui and Yuanyuan Shi},
    doi = {10.1002/aelm.201800143},
    issn = {2199-160X},
    year  = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Advanced Electronic Materials},
    volume = {5},
    number = {1},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Dong, Zuoyuan; Xu, Hejun; Liang, Fang; Luo, Chen; Wang, Chaolun; Cao, Zi-Yu; Chen, Xiao-Jia; Zhang, Jian; Wu, Xing
    Raman Characterization on Two-Dimensional Materials-Based Thermoelectricity
    In: Molecules, vol. 24, no. 1, 2019.

    Links | BibTeX


    @article{RN179,
    title = {Raman Characterization on Two-Dimensional Materials-Based Thermoelectricity},
    author = {Zuoyuan Dong and Hejun Xu and Fang Liang and Chen Luo and Chaolun Wang and Zi-Yu Cao and Xiao-Jia Chen and Jian Zhang and Xing Wu},
    doi = {10.3390/molecules24010088},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Molecules},
    volume = {24},
    number = {1},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Dong, Hui; Xu, Feng; Sun, Ziqi; Wu, Xing; Zhang, Qiubo; Zhai, Yusheng; Tan, Xiao Dong; He, Longbing; Xu, Tao; Zhang, Ze; Duan, Xiangfeng; Sun, Litao
    In Situ Interface Engineering for Probing the Limit of Quantum Dot Photovoltaic Devices
    In: Nature Nanotechnology, vol. 14, no. 10, pp. 950-+, 2019, ISSN: 1748-3387.

    Links | BibTeX | 标签: 原位电镜


    @article{RN138,
    title = {In Situ Interface Engineering for Probing the Limit of Quantum Dot Photovoltaic Devices},
    author = {Hui Dong and Feng Xu and Ziqi Sun and Xing Wu and Qiubo Zhang and Yusheng Zhai and Xiao Dong Tan and Longbing He and Tao Xu and Ze Zhang and Xiangfeng Duan and Litao Sun},
    doi = {10.1038/s41565-019-0526-7},
    issn = {1748-3387},
    year = {2019},
    date = {2019-01-01},
    urldate = {2019-01-01},
    journal = {Nature Nanotechnology},
    volume = {14},
    number = {10},
    pages = {950-+},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }



  • 2018

    Journal Article

    Zhou J, Xie M, Cui A, Zhou B, Jiang K, Shang L, Hu Z, Chu J H
    Manipulating Behaviors from Heavy Tungsten Doping on Interband Electronic Transition and Orbital Structure Variation of Vanadium Dioxide Films
    ACS Appl Mater Interfaces, 2018, 10: 30548-30557.

    | 标签: 传感器

    Journal Article

    Zhang X, Han D, Chen S Y, Duan C G, Chu J H
    First-principles study on the alkali chalcogenide secondary compounds in Cu(In,Ga)Se-2 and Cu2ZnSn(S,Se)(4) thin film solar cells
    Journal of Energy Chemistry, 2018, 27: 1140-1150.

    | 标签: 传感器

    Journal Article

    Zhang Q, Deng H M, Yu J J, Xu B, Tao J H, Yang P X, Sun L, Chu J H
    Effect of sulfurization temperature of solution-processed Cu-2 SnS3 absorber for low cost photovoltaic cells
    Materials Letters, 2018, 228: 447-449.

    | 标签: 传感器

    Journal Article

    Zhang Q, Deng H M, Yu J J, Cao H Y, Chen L L, Tao J H, Zheng X P, Yang P X, Sun L, Chu J H
    Effects of bismuth-doping on the properties of Cu(In, Al)Se-2 thin films prepared by selenization of sputtered stacked precursors
    Materials Letters, 2018, 213: 19-22.

    | 标签: 传感器

    Journal Article

    Yu L, Deng H M, Zhou W L, Shen P, Chen S Q, Yang P X, Chu J H
    Synthesis, structure and optics properties of Ba(Fe1/2Nb1/2)O-3 thin film by pulsed laser deposition
    Materials Letters, 2018, 219: 89-92.

    | 标签: 传感器

    Journal Article

    Yu J J, Deng H M, Zhang Q, Tao J H, Sun L, Yang P X, Chu J H
    The role of sulfurization temperature on the morphological, structural and optical properties of electroplated Cu2MnSnS4 absorbers for photovoltaics
    Materials Letters, 2018, 233: 111-114.

    | 标签: 传感器

    Journal Article

    Yu J J, Deng H M, Chen L L, Tao J H, Zhang Q, Guo B L, Sun L, Yang P X, Zheng X P, Chu J H
    Improvement performance of two-step electrodepositing Cu2MnSnS4 thin film solar cells by tuning Cu-Sn alloy layer deposition time
    Materials Chemistry and Physics, 2018, 211: 382-388.

    | 标签: 传感器

    Journal Article

    Yin C, Wang X, Chen Y, Li D, Lin T, Sun S, Shen H, Du P, Sun J, Meng X, Chu J H, Wong H F, Leung C W, Wang Z, Wang J
    A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor
    Nanoscale, 2018, 10: 1727-1734.

    | 标签: 传感器

    Journal Article

    Yan Z, Li H, Li H, Lai G, Chu J H, Guo H, Zhao Q
    Simultaneous determination of nine anticoagulant rodenticides by ultra-performance liquid chromatography-tandem mass spectrometry with ultrasound-assisted low-density solvent dispersive liquid-liquid microextraction
    J Chromatogr B Analyt Technol Biomed Life Sci, 2018, 1092: 453-458.

    | 标签: 传感器

    Journal Article

    Xu W L, Li X, Li Q Q, Deng Q L, Zhang J Z, Jiang K, Li Y W, Shang L Y, Hu Z G, Chu J H
    Spectroscopic study of phase transitions in ferroelectric Bi0.5Na0.5Ti1-xMnxO3-delta films with enhanced ferroelectricity and energy storage ability
    Journal of Alloys and Compounds, 2018, 768: 377-386.

    | 标签: 传感器

    Journal Article

    Xu H J, Wu X, Li X M, Luo C, Liang F, Orignac E, Zhang J, Chu J H
    Properties of graphene-metal contacts probed by Raman spectroscopy
    Carbon, 2018, 127: 491-497.

    | 标签: 传感器

    Journal Article

    Wu G, Wang X, Chen Y, Wang Z, Shen H, Lin T, Hu W, Wang J, Zhang S, Meng X, Chu J H
    Ultrahigh photoresponsivity MoS2 photodetector with tunable photocurrent generation mechanism
    Nanotechnology, 2018, 29: 485204

    | 标签: 传感器

    Journal Article

    Weng G E, Xue J J, Tian J, Hu X B, Bao X M, Lin H C, Chen S Q, Zhu Z Q, Chu J H
    Picosecond Random Lasing Based on Three-Photon Absorption in Organometallic Halide CH3NH3PbBr3 Perovskite Thin Films
    Acs Photonics, 2018, 5: 2951.

    | 标签: 传感器

    Journal Article

    Wang X, Wang L, Fu X H, Lu X H, Yue F Y, Yang P X, Yuan X Z, Jing C B, Chu J H
    Thermal oxidation-resistant GeO2 ATR hollow waveguide based on NiCr capillary tube and its thermal effects
    Applied Physics B-Lasers and Optics, 2018, 124: 156.

    | 标签: 传感器

    Journal Article

    Wang X, Chen Y, Wu G, Wang J, Tian B, Sun S, Shen H, Lin T, Hu W, Kang T, Tang M, Xiao Y, Sun J, Meng X, Chu J H
    Graphene Dirac point tuned by ferroelectric polarization field
    Nanotechnology, 2018, 29: 134002.

    | 标签: 传感器

    Journal Article

    Wang T T, Deng H M, Zhu L Q, Yang P X, Chu J H
    Modified magnetization and electron transition behavior in Bi2Fe4O9, Bi2Fe4O9-CoFe2O4 and Bi2Fe4O9-NiFe2O4
    Ceramics International, 2018, 44: 2491-2495.

    | 标签: 传感器

    Journal Article

    Wang T T, Deng H M, Zhou W L, Si S F, Guo B L, Zheng X P, Yang P X, Chu J H
    Enhanced ferromagnetism in Ni doped Aurivillius compound Bi6Fe2Ti3O18 thin films prepared by chemical solution deposition
    Materials Letters, 2018, 220: 261-265.

    | 标签: 传感器

    Journal Article

    Wang L, Wang X, Fu X, Guo H, Sun Z, Jing C, Yang P, Lu X, Chu J H
    Study on light capturing ability of silicon thin film rectangular hollow waveguide solar cell
    Journal of Optoelectronics·Laser, 2018, 29: 235-242.

    | 标签: 传感器

    Journal Article

    Wang J Y, Deng Q L, Li M J, Wu C, Jiang K, Hu Z G, Chu J H
    Facile fabrication of 3D porous MnO@GS/CNT architecture as advanced anode materials for high-performance lithium-ion battery
    Nanotechnology, 2018, 29: 315403.

    | 标签: 传感器

    Journal Article

    Wang J, Wu C, Deng Q, Jiang K, Shang L, Hu Z, Chu J H
    Highly durable and cycle-stable lithium storage based on MnO nanoparticle-decorated 3D interconnected CNT/graphene architecture
    Nanoscale, 2018, 10: 13140-13148.

    | 标签: 传感器

    Journal Article

    Wang J, Deng Q, Li M, Jiang K, Hu Z, Chu J H
    High-capacity and long-life lithium storage boosted by pseudocapacitance in three-dimensional MnO-Cu-CNT/graphene anodes
    Nanoscale, 2018, 10: 2944-2954.

    | 标签: 传感器

    Journal Article

    Sun Z H, Fu X H, Li G S, Zhang W Q, Zhong Y, Wang X, Jing C B, Lu X H, Yue F Y, Chu J H
    Metallic hollow waveguide based on GeO2-NaOH precursor solution for transmission of CO2 laser radiations
    Optical and Quantum Electronics, 2018, 50: 391.

    | 标签: 传感器

    Journal Article

    Sun H, Wang J, Wang F, Xu L, Jiang K, Shang L, Hu Z, Chu J H
    Enhanced exciton emission behavior and tunable band gap of ternary W(SxSe1-x)2 monolayer: temperature dependent optical evidence and first-principles calculations
    Nanoscale, 2018, 10: 11553-11563.

    | 标签: 传感器

    Journal Article

    Song K, Zhu X T, Tang K, Bai W, Zhu L Q, Yang J, Zhang Y Y, Tang X D, Chu J H
    Molecular beam epitaxial growth, transmittance and photoluminescence spectra of zinc-blende CdTe thin films with high-quality on perovskite SrTiO3 (111) substrates
    Journal of Crystal Growth, 2018, 485: 41-48.

    | 标签: 传感器

    Journal Article

    i S F, Deng H M, Zhou W L, Wang T T, Yang P X, Chu J H
    Modified structure and optical band-gap in perovskite ferroelectric (1-x) KNbO3-xBaCo(1/3)Nb(2/3)O(3) ceramics
    Ceramics International, 2018, 44: 14638-14644.

    | 标签: 传感器

    Journal Article

    Shen P, Guan Z, Zhong N, Xiang P H, Wang R B, Bao Q Y, Yang P X, Sun L, Duan C G, Chu J H
    Leakage mechanisms of double-perovskite Bi2FeMnO6 epitaxial thin films
    Journal of Physics D-Applied Physics, 2018, 51: 045304.

    | 标签: 传感器

    Journal Article

    Qu Y, Zhou W, Tong J C, Yao N J, Xu X Y, Hu T, Huang Z M, Chu J H
    High sensitivity of room-temperature sub-terahertz photodetector based on In0.53Ga0.47As material
    Applied Physics Express, 2018, 11: 112201.

    | 标签: 传感器

    Journal Article

    Pan X H, Xu H, Gao Y Q, Zhang Y F, Sun L X, Li D, Wen Z J, Li S M, Yu W W, Huang Z M, Wang J L, Zhang B, Sun Y, Sun J L, Meng X J, Chen X, Dagens B, Hao J M, Shen Y, Dai N, Chu J H
    Spatial and Frequency Selective Plasmonic Metasurface for Long Wavelength Infrared Spectral Region
    Advanced Optical Materials, 2018, 6: 1800337.

    | 标签: 传感器

    Journal Article

    Meng C M, Tian B B, Wang H L, Sun S, Shen H, Lin T, Yu J, Sun J L, Meng X J, Chu J H
    Structural, electrical and magnetic properties of (110)-oriented BF-BZT-ST Films
    Ceramics International, 2018, 44: 9053-9057.

    | 标签: 传感器

    Journal Article

    Luo X, Tian W X, Huang Y, Wu X L, Li L H, Chen P, Zhu X G, Li Q L, Chu J H
    Rapid vascularization identification using adaptive Gamma correction and support vector machine based on simulated annealing
    Journal of Infrared and Millimeter Waves, 2018, 37: 98-105.

    | 标签: 传感器

    Journal Article

    Luo M, Yin H H, Chu J H
    Strain-Dependent Electronic and Magnetic of Mg-Doped Monolayer of WS2
    Journal of Superconductivity and Novel Magnetism, 2018, 31: 1637-1642.

    | 标签: 传感器

    Journal Article

    Li M, Deng Q, Wang J, Jiang K, Hu Z, Chu J H
    &ITIn situ&IT carbon encapsulation of vertical MoS2 arrays with SnO2 for durable high rate lithium storage: dominant pseudocapacitive behavior
    Nanoscale, 2018, 10: 741-751.

    | 标签: 传感器

    Journal Article

    Li D, Wang X D, Chen Y, Zhu S X, Gong F, Wu G J, Meng C M, Liu L, Wang L, Lin T, Sun S, Shen H, Wang X J, Hu W D, Wang J L, Sun J L, Meng X J, Chu J H
    The ambipolar evolution of a high-erformance WSe2 transistor assisted by a ferroelectric polymer
    Nanotechnology, 2018, 29: 105202.

    | 标签: 传感器

    Journal Article

    Li C Q, Wang F, Sun Y Y, Jiang K, Gong S J, Hu Z G, Zhou Z Y, Dong X L, Chu J H
    Lattice dynamics, phase transition, and tunable fundamental band gap of photovoltaic (K,Ba)(Ni,Nb)O3-delta ceramics from spectral measurements and first-principles calculations
    Physical Review B, 2018, 97: 094109.

    | 标签: 传感器

    Journal Article

    Jin L P, Li Y W, Hu Z G, Chu J H
    Full three-dimensional morphology evolution of amorphous thin films for atomic layer deposition
    Aip Advances, 2018, 8: 045304.

    | 标签: 传感器

    Journal Article

    Jiang T, Wang F, Cui A, Guo S, Jiang K, Shang L, Hu Z, Chu J H
    In situ exploration of the thermodynamic evolution properties in the type II interface from the WSe2-WS2 lateral heterojunction
    Nanotechnology, 2018, 29: 435703.

    | 标签: 传感器

    Journal Article

    Hu X B, Tao J H, Weng G E, Jiang J C, Chen S Q, Zhu Z Q, Chu J H
    Investigation of electrically-active defects in Sb2Se3 thin-film solar cells with up to 5.91% efficiency via admittance spectroscopy
    Solar Energy Materials and Solar Cells, 2018, 186: 324-329.

    | 标签: 传感器

    Journal Article

    Hu X B, Tao J H, Chen S M, Xue J J, Weng G E, Kaijiang, Hu Z G, Jiang J C, Chen S Q, Zhu Z Q, Chu J H
    Improving the efficiency of Sb2Se3 thin-film solar cells by post annealing treatment in vacuum condition
    Solar Energy Materials and Solar Cells, 2018, 187: 170-175.

    | 标签: 传感器

    Journal Article

    Hong J, Wang H, Yue F Y, Tomm J W, Kruschke D, Jing C B, Chen S Q, Chen Y, Hu W D, Chu J H
    Emission Kinetics from PbSe Quantum Dots in Glass Matrix at High Excitation Levels
    Physica Status Solidi-Rapid Research Letters, 2018, 12: 1800012.

    | 标签: 传感器

    Journal Article

    He J, Lu X S, Li X R, Dong Y C, Yue F Y, Chen Y, Sun L, Yang P X, Chu J H
    Compositional dependence of photovoltaic properties of Cu2ZnSnSe4 thin film solar cell: Experiment and simulation
    Solar Energy, 2018, 159: 572-578.

    | 标签: 传感器

    Journal Article

    Guo Y X, Jiang J C, Zuo S H, Shi F W, Tao J H, Hu Z G, Hu X B, Hu G J, Yang P X, Chu J H
    RF sputtered CdS films as independent or buffered electron transport layer for efficient planar perovskite solar cell
    Solar Energy Materials and Solar Cells, 2018, 178: 186-192.

    | 标签: 传感器

    Journal Article

    Gong S J, Gong C, Sun Y Y, Tong W Y, Duan C G, Chu J H, Zhang X
    Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors
    Proc Natl Acad Sci U S A, 2018, 115: 8511-8516.

    | 标签: 传感器

    Journal Article

    Gao X, Li H, Li H, Dong S, Chu J H, Guo H, Zhao Q
    Sensitive determination of nine anticoagulant rodenticides in blood by high resolution mass spectrometry with supported liquid extraction pretreatment
    Forensic Sci Int, 2018, 292: 39-44.

    | 标签: 传感器

    Journal Article

    Dong Y C, Lu X S, Shen P, Chen Y, Yue F Y, Xiang P H, Sun L, Yang P X, Chu J H
    Strategic improvement of Cu2SnS3 thin film by different heating rates and photoluminescence investigation
    Materials Science in Semiconductor Processing, 2018, 84: 124-130.

    | 标签: 传感器

    Journal Article

    Deng Q L, Li M J, Wang J Y, Jiang K, Hu Z G, Chu J H
    Carbonized polydopamine wrapping layered KNb3O8 nanoflakes based on alkaline hydrothermal for enhanced and discrepant lithium storage
    Journal of Alloys and Compounds, 2018, 749: 803-810.

    | 标签: 传感器

    Journal Article

    Deng Q, Li M, Wang J, Jiang K, Hu Z, Chu J H
    Free-anchored Nb2O5@graphene networks for ultrafast-stable lithium storage
    Nanotechnology, 2018, 29: 185401.

    | 标签: 传感器

    Journal Article

    Deng Q, Li M, Wang J, Jiang K, Hu Z, Chu J H
    Controllable interlayer space effects of layered potassium triniobate nanoflakes on enhanced pH dependent adsorption-photocatalysis behaviors
    Sci Rep, 2018, 8: 6616.

    | 标签: 传感器

    Journal Article

    Dai Y, Cheng Y, Fedirchuk B, Jordan L M, Chu J H
    Motoneuron output regulated by ionic channels: a modeling study of motoneuron frequency-current relationships during fictive locomotion
    J Neurophysiol, 2018, 120: 1840-1858.

    | 标签: 传感器

    Journal Article

    Chen Y, Wang X D, Wu G J, Wang Z, Fang H H, Lin T, Sun S, Shen H, Hu W D, Wang J L, Sun J L, Meng X J, Chu J H
    High-Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure
    Small, 2018, 14: 1703293.

    | 标签: 传感器

    Journal Article

    Chen M, Zhou B, Wang F, Xu L P, Jiang K, Shang L Y, Hu Z G, Chu J H
    Interlayer coupling and the phase transition mechanism of stacked MoS2/TaS2 heterostructures discovered using temperature dependent Raman and photoluminescence spectroscopy
    Rsc Advances, 2018, 8: 21968-21974.

    | 标签: 传感器

    Journal Article

    Cai J, Wang J L, Gao H, Tian B B, Gong S J, Duan C G, Chu J H
    Doping and band gap control at poly(vinylidene fluoride)/graphene interface
    Journal of Physics D-Applied Physics, 2018, 51: 195303.

    | 标签: 传感器

    Conference

    Xing Wu Xiyue Tian, Xuewen Wang; Chu, Junhao
    Flexible Artificial Sensory Nerve With Multiple External Stimuli Reflection and Interaction Based on Graphene Heterosturcture Array
    NCFE, Nature Conference on Flexible Electronics-Visions of a Flexible Future, 2018.

    BibTeX | 标签: 传感器 石墨烯


    @conference{nokey,
    title = {Flexible Artificial Sensory Nerve With Multiple External Stimuli Reflection and Interaction Based on Graphene Heterosturcture Array},
    author = {Xiyue Tian, Xing Wu, Xuewen Wang, Zheyu Liu, Fei Qiao, Guihong Li, Zewei Luo, Jing Wu, Shanbiao Liu, Quanling Li, Jian Zhang, and Junhao Chu},
    year = {2018},
    date = {2018-10-12},
    urldate = {2018-10-12},
    booktitle = {NCFE, Nature Conference on Flexible Electronics-Visions of a Flexible Future},
    keywords = {传感器, 石墨烯},
    pubstate = {published},
    tppubtype = {conference}
    }



    Conference

    Wang, Yu; Ye, Dawei; Lyu, Liangjian; Xiang, Yingfei; Min, Hao; Shi, C. -J. Richard
    A 13.56MHz Wireless Power and Data Transfer Receiver Achieving 75.4% Effective-Power-Conversion Efficiency with 0.1% ASK Modulation Depth and 9.2mW Output Power
    2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, ISSN: 2376-8606.

    Links | BibTeX | 标签: 芯片设计


       

    @conference{YWangCShi18,
    title = {A 13.56MHz Wireless Power and Data Transfer Receiver Achieving 75.4% Effective-Power-Conversion Efficiency with 0.1% ASK Modulation Depth and 9.2mW Output Power},
    author = {Yu Wang and Dawei Ye and Liangjian Lyu and Yingfei Xiang and Hao Min and C. -J. Richard Shi},
    doi = {10.1109/ISSCC.2018.8310224},
    issn = {2376-8606},
    year = {2018},
    date = {2018-02-01},
    urldate = {2018-02-01},
    booktitle = {2018 IEEE International Solid - State Circuits Conference - (ISSCC)},
    pages = {142-144},
    keywords = {芯片设计},
    pubstate = {published},
    tppubtype = {conference}
    }
       


       

    Journal Article

    Chen, Xiaoqiu; Wang, Qing; Wu, Xin; Wang, Tao; Tang, Yanxue; Duan, Zhihua; Sun, Dazhi; Zhao, Xiangyong; Wang, Feifei; Shi, Wangzhou
    Piezoelectric/Photoluminescence Effect in One-Dimensional Lead-Free Nanofibers
    In: Scripta Materialia, vol. 145, pp. 81-84, 2018, ISSN: 1359-6462.

    Links | BibTeX


       

    @article{RN186,
    title = {Piezoelectric/Photoluminescence Effect in One-Dimensional Lead-Free Nanofibers},
    author = {Xiaoqiu Chen and Qing Wang and Xin Wu and Tao Wang and Yanxue Tang and Zhihua Duan and Dazhi Sun and Xiangyong Zhao and Feifei Wang and Wangzhou Shi},
    doi = {10.1016/j.scriptamat.2017.10.018},
    issn = {1359-6462},
    year = {2018},
    date = {2018-01-01},
    urldate = {2018-01-01},
    journal = {Scripta Materialia},
    volume = {145},
    pages = {81-84},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }
       


       

    Journal Article

    Dong, Hui; Xu, Tao; Sun, Ziqi; Zhang, Qiubo; Wu, Xing; He, Longbing; Xu, Feng; Sun, Litao
    Simultaneous Atomic-Level Visualization and High Precision Photocurrent Measurements on Photoelectric Devices by In Situ TEM
    In: RSC Advances, vol. 8, no. 2, pp. 948-953, 2018, ISSN: 2046-2069.

    Links | BibTeX | 标签: 原位电镜


       

    @article{RN88,
    title = {Simultaneous Atomic-Level Visualization and High Precision Photocurrent Measurements on Photoelectric Devices by In Situ TEM},
    author = {Hui Dong and Tao Xu and Ziqi Sun and Qiubo Zhang and Xing Wu and Longbing He and Feng Xu and Litao Sun},
    doi = {10.1039/c7ra10696c},
    issn = {2046-2069},
    year = {2018},
    date = {2018-01-01},
    urldate = {2018-01-01},
    journal = {RSC Advances},
    volume = {8},
    number = {2},
    pages = {948-953},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }
       


       


    Journal Article

    Liang, Fang; Xu, Hejun; Wu, Xing; Wang, Chaolun; Luo, Chen; Zhang, Jian
    Raman Spectroscopy Characterization of Two-Dimensional Materials
    In: Chinese Physics B, vol. 27, no. 3, 2018, ISSN: 1674-1056.

    Links | BibTeX


       

    @article{RN166,
    title = {Raman Spectroscopy Characterization of Two-Dimensional Materials},
    author = {Fang Liang and Hejun Xu and Xing Wu and Chaolun Wang and Chen Luo and Jian Zhang},
    doi = {10.1088/1674-1056/27/3/037802},
    issn = {1674-1056},
    year = {2018},
    date = {2018-01-01},
    urldate = {2018-01-01},
    journal = {Chinese Physics B},
    volume = {27},
    number = {3},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }
       


       

    Journal Article

    Wang, Chaolun; Wu, Xing; Ma, Yonghui; Mu, Gang; Li, Yaoyi; Luo, Chen; Xu, Hejun; Zhang, Yuanyuan; Yang, Jing; Tang, Xiaodong; Zhang, Jian; Bao, Wenzhong; Duan, Chungang
    Metallic few-layered VSe2 Nanosheets: High Two-Dimensional Conductivity for Flexible In-Plane Solid-State Supercapacitors
    In: Journal of Materials Chemistry A, vol. 6, no. 18, pp. 8299-8306, 2018, ISSN: 2050-7488.

    Links | BibTeX | 标签: 传感器


       

    @article{RN164,
    title = {Metallic few-layered VSe2 Nanosheets: High Two-Dimensional Conductivity for Flexible In-Plane Solid-State Supercapacitors},
    author = {Chaolun Wang and Xing Wu and Yonghui Ma and Gang Mu and Yaoyi Li and Chen Luo and Hejun Xu and Yuanyuan Zhang and Jing Yang and Xiaodong Tang and Jian Zhang and Wenzhong Bao and Chungang Duan},
    doi = {10.1039/c8ta00089a},
    issn = {2050-7488},
    year = {2018},
    date = {2018-01-01},
    urldate = {2018-01-01},
    journal = {Journal of Materials Chemistry A},
    volume = {6},
    number = {18},
    pages = {8299-8306},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }
       


       

    Journal Article

    Wu, Xing; Yu, Kaihao; Cha, Dongkyu; Bosman, Michel; Raghavan, Nagarajan; Zhang, Xixiang; Li, Kun; Liu, Qi; Sun, Litao; Pey, Kinleong
    Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects
    In: Advanced Science, vol. 5, no. 6, 2018.

    Links | BibTeX | 标签: 原位电镜 可靠性


    @article{RN184,
    title = {Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects},
    author = {Xing Wu and Kaihao Yu and Dongkyu Cha and Michel Bosman and Nagarajan Raghavan and Xixiang Zhang and Kun Li and Qi Liu and Litao Sun and Kinleong Pey},
    doi = {10.1002/advs.201800096},
    year = {2018},
    date = {2018-01-01},
    urldate = {2018-01-01},
    journal = {Advanced Science},
    volume = {5},
    number = {6},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Xu, Hejun; Wu, Xing; Li, Xinming; Luo, Chen; Liang, Fang; Orignac, Edmond; Zhang, Jian; Chu, Junhao
    Properties of Graphene-Metal Contacts Probed by Raman Spectroscopy
    In: Carbon, vol. 127, pp. 491-497, 2018, ISSN: 0008-6223.

    Links | BibTeX | 标签: 石墨烯


    @article{RN84,
    title = {Properties of Graphene-Metal Contacts Probed by Raman Spectroscopy},
    author = {Hejun Xu and Xing Wu and Xinming Li and Chen Luo and Fang Liang and Edmond Orignac and Jian Zhang and Junhao Chu},
    doi = {10.1016/j.carbon.2017.11.035},
    issn = {0008-6223},
    year = {2018},
    date = {2018-01-01},
    urldate = {2018-01-01},
    journal = {Carbon},
    volume = {127},
    pages = {491-497},
    keywords = {石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Xu, Hu; Zhang, Haima; Guo, Zhongxun; Shan, Yuwei; Wu, Shiwei; Wang, Jianlu; Hu, Weida; Liu, Hanqi; Sun, Zhengzong; Luo, Chen; Wu, Xing; Xu, Zihan; Zhang, David Wei; Bao, Wenzhong; Zhou, Peng
    High-Performance Wafer-Scale MoS2 Transistors toward Practical Application
    In: Small, vol. 14, no. 48, 2018, ISSN: 1613-6810.

    Links | BibTeX | 标签: 可靠性


    @article{RN163,
    title = {High-Performance Wafer-Scale MoS2 Transistors toward Practical Application},
    author = {Hu Xu and Haima Zhang and Zhongxun Guo and Yuwei Shan and Shiwei Wu and Jianlu Wang and Weida Hu and Hanqi Liu and Zhengzong Sun and Chen Luo and Xing Wu and Zihan Xu and David Wei Zhang and Wenzhong Bao and Peng Zhou},
    doi = {10.1002/smll.201803465},
    issn = {1613-6810},
    year = {2018},
    date = {2018-01-01},
    urldate = {2018-01-01},
    journal = {Small},
    volume = {14},
    number = {48},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Yu, Kaihao; Zhao, Wen; Wu, Xing; Zhuang, Jianing; Hu, Xiaohui; Zhang, Qiubo; Sun, Jun; Xu, Tao; Chai, Yang; Ding, Feng; Sun, Litao
    In Situ Atomic-Scale Observation of Monolayer Graphene Growth From SiC
    In: Nano Research, vol. 11, no. 5, pp. 2809-2820, 2018, ISSN: 1998-0124.al, vol. 10, no. 1, 2018, ISSN: 1943-0655.

    Links | BibTeX | 标签: 原位电镜 石墨烯


    @article{RN165,
    title = {In Situ Atomic-Scale Observation of Monolayer Graphene Growth From SiC},
    author = {Kaihao Yu and Wen Zhao and Xing Wu and Jianing Zhuang and Xiaohui Hu and Qiubo Zhang and Jun Sun and Tao Xu and Yang Chai and Feng Ding and Litao Sun},
    doi = {10.1007/s12274-017-1911-x},
    issn = {1998-0124},
    year = {2018},
    date = {2018-01-01},
    urldate = {2018-01-01},
    journal = {Nano Research},
    volume = {11},
    number = {5},
    pages = {2809-2820},
    keywords = {原位电镜, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Zhang, Hanyu; Zhou, Linjie; Rahman, B. M. A.; Wu, Xing; Lu, Liangjun; Xu, Youhua; Xu, Jian; Song, Junchao; Hu, Zhigao; Xu, Liping; Chen, Jianping
    Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation
    In: IEEE Photonics Journal, vol. 10, no. 1, 2018, ISSN: 1943-0655.

    Links | BibTeX


    @article{RN185,
    title = {Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation},
    author = {Hanyu Zhang and Linjie Zhou and B. M. A. Rahman and Xing Wu and Liangjun Lu and Youhua Xu and Jian Xu and Junchao Song and Zhigao Hu and Liping Xu and Jianping Chen},
    doi = {10.1109/jphot.2017.2781710},
    issn = {1943-0655},
    year = {2018},
    date = {2018-01-01},
    urldate = {2018-01-01},
    journal = {IEEE Photonics Journal},
    volume = {10},
    number = {1},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }



    Journal Article

    Zheng, Dingshan; Fang, Hehai; Long, Mingsheng; Wu, Feng; Wang, Peng; Gong, Fan; Wu, Xing; Ho, Johnny C.; Liao, Lei; Hu, Weida
    High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition
    In: ACS Nano, vol. 12, no. 7, pp. 7239-7245, 2018, ISSN: 1936-0851.

    Links | BibTeX


    @article{RN113,
    title = {High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition},
    author = {Dingshan Zheng and Hehai Fang and Mingsheng Long and Feng Wu and Peng Wang and Fan Gong and Xing Wu and Johnny C. Ho and Lei Liao and Weida Hu},
    doi = {10.1021/acsnano.8b03291},
    issn = {1936-0851},
    year = {2018},
    date = {2018-01-01},
    urldate = {2018-01-01},
    journal = {ACS Nano},
    volume = {12},
    number = {7},
    pages = {7239-7245},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }



  • 2017

    Journal Article

    Zhu Z, Chu J H
    Surface Potential Distribution Model Based on Analytical Channel Potential Approximation for Ultra-Thin Body Poly-Si Thin Film Transistors in Linear Region
    Surface Review and Letters, 2017, 24: 1750108.

    | 标签: 传感器

    Journal Article

    Zhu X T, Song K, Tang K, Bai W, Bai J W, Zhu L Q, Yang J, Zhang Y Y, Qi R J, Huang R, Tang X D, Chu J H
    Growth of the metastable zinc-blende MnTe films on highly dissimilar perovskite SrTiO3 (001) substrates by molecular beam epitaxy
    Journal of Alloys and Compounds, 2017, 729: 95-99.

    | 标签: 传感器

    Journal Article

    Zhang Y, Xia D, Quan P, Feng Z, Yang P, Chu J H
    The study on hot spots failure of polycrystalline wafer based photovoltaic modules
    Acta Energiae Solaris Sinica, 2017, 38: 1854-1861.

    | 标签: 传感器

    Journal Article

    Zhang Q, Deng H M, Chen L L, Yu L, Tao J H, Sun L, Yang P X, Chu J H
    Cation substitution induced structural transition, band gap engineering and grain growth of Cu2CdxZn1-xSnS4 thin films
    Journal of Alloys and Compounds, 2017, 695: 482-488.

    | 标签: 传感器

    Journal Article

    Zhang Q, Deng H M, Chen L L, Tao J H, Yu J J, Yang P X, Chu J H
    Effects of sulfurization temperature on the structural and optical properties of Cu2CdSnS4 thin films prepared by direct liquid method
    Materials Letters, 2017, 193: 206-209.

    | 标签: 传感器

    Journal Article

    Zhang P, Zhang W, Wang J, Jiang K, Zhang J, Li W, Wu J, Hu Z, Chu J H
    The electro-optic mechanism and infrared switching dynamic of the hybrid multilayer VO2/Al:ZnO heterojunctions
    Sci Rep, 2017, 7: 4425.

    | 标签: 传感器

    Journal Article

    Yu L, Deng H M, Zhou W L, Yang P X, Chu J H
    Structural characteristics and optical properties of lead-free Bi(Zn1/2Ti1/2) O-3-BaTiO3 ceramics
    Ceramics International, 2017, 43: 6175-6179.

    | 标签: 传感器

    Journal Article

    Yu L, Deng H M, Zhou W L, Yang P X, Chu J H
    Band gap engineering and magnetic switching in a novel perovskite (1-x)KNbO3-xBaNb1/2Fe1/2O3
    Materials Letters, 2017, 202: 39-43.

    | 标签: 传感器

    Journal Article

    Yu J J, Deng H M, Tao J H, Chen L L, Cao H Y, Sun L, Yang P X, Chu J H
    Synthesis of Cu2MnSnS4 thin film deposited on seeded fluorine doped tin oxide substrate via a green and low-cost electrodeposition method
    Materials Letters, 2017, 191: 186-188.

    | 标签: 传感器

    Journal Article

    Yao Q F, Cai J, Tong W Y, Gong S J, Wang J Q, Wan X G, Duan C G, Chu J H
    Manipulation of the large Rashba spin splitting in polar two-dimensional transition-metal dichalcogenides
    Physical Review B, 2017, 95: 165401.

    | 标签: 传感器

    Journal Article

    Xue S, Zhao X L, Wang J L, Tian B B, Huang H, Meng C M, Liu L, Ye L, Sun J L, Meng X J, Zhang X D, Chu J H
    Preparation of La0.67Ca0.23Sr0.1MnO3 thin films with interesting electrical and magnetic properties via pulsed-laser deposition
    Science China-Physics Mechanics & Astronomy, 2017, 60: 027521.

    | 标签: 传感器

    Conference

    Wu J, Huang Z, Jiang L, Gao Y, Zhou W, Chu J H
    2017 Flexible thermistors: MCNO films with low resistivity and high TCR deposited on flexible organic sheets by RF magnetron sputtering
    the Infrared Remote Sensing and Instrumentation Xxv, San Diego, California, United States, Aug 07-08, 2017.

    | 标签: 传感器

    Journal Article

    Wang X D, Liu C S, Chen Y, Wu G J, Yan X, Huang H, Wang P, Tian B B, Hong Z C, Wang Y T, Sun S, Shen H, Lin T, Hu W D, Tang M H, Zhou P, Wang J, Sun J J, Meng X J, Chu J H, Li Z
    Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels
    2d Materials, 2017, 4: 025036.

    | 标签: 传感器

    Journal Article

    Wang X, Wang L, Fu X H, Jing C B, Yue F Y, Yang P X, Chu J H
    Thermal behaviors of stainless steel tube based GeO2 ATR hollow fibers for transmitting CO2 laser radiations
    Optics and Laser Technology, 2017, 95: 42-45.

    | 标签: 传感器

    Journal Article

    Wang T T, Deng H M, Zhou W L, Yang P X, Chu J H
    Structural, ferromagnetic and optical properties of pure bismuth A-site polar perovskite Bi(Mg3/8Fe2/8Ti3/8)O-3 synthesized at ambient pressure
    Journal of Materials Science-Materials in Electronics, 2017, 28: 934-938.

    | 标签: 传感器

    Journal Article

    Wang T T, Deng H M, Zhou W L, Meng X K, Yang P X, Chu J H
    Modified optical and magnetic properties at room-temperature across lead-free morphotropic phase boundary in (1-x)BiTi3/8Fe2/8Mg3/8O3-xCaTiO3
    Ceramics International, 2017, 43: 6453-6459.

    | 标签: 传感器

    Journal Article

    Wang T T, Deng H M, Shen P, Hong J, Yue F Y, Zhu L Q, Yang P X, Chu J H
    The synthesis and microstructural, optical, magnetic characterizations of m 0 0-oriented epitaxial Bi2Fe4O9 thin film by pulsed laser deposition
    Materials Letters, 2017, 204: 81-84.

    | 标签: 传感器

    Journal Article

    Wang T T, Deng H M, Cao H Y, Zhou W L, Weng G E, Chen S Q, Yang P X, Chu J H
    Structural, optical and magnetic modulation in Mn and Mg co-doped BiFeO3 films grown on Si substrates
    Materials Letters, 2017, 199: 116-119.

    | 标签: 传感器

    Journal Article

    Wang T, Deng H, Meng X, Cao H, Zhou W, Shen P, Zhang Y, Yang P, Chu J H
    Tunable polarization and magnetization at room-temperature in narrow bandgap Aurivillius Bi6Fe2-xCox/2Nix/2Ti3O18
    Ceramics International, 2017, 43: 8792-8799.

    | 标签: 传感器

    Journal Article

    Wang L, Wang X, Fu X H, Sun Z H, Jing C B, Lu X H, Yang P X, Chu J H
    Study on light-capture performance of silicon thin-film hollow waveguide solar cells
    Optical and Quantum Electronics, 2017, 49: 369.

    | 标签: 传感器

    Journal Article

    Wang J Y, Zhang P, Deng Q L, Jiang K, Zhang J Z, Hu Z G, Chu J H
    Electronic transitions of the transparent delafossite-type CuGa1-xCrxO2 system: first-principles calculations and temperature-dependent spectral experiments
    Journal of Materials Chemistry C, 2017, 5: 183-191.

    | 标签: 传感器

    Journal Article

    Wang J, Deng Q, Li M, Jiang K, Zhang J, Hu Z, Chu J H
    Copper ferrites@reduced graphene oxide anode materials for advanced lithium storage applications
    Sci Rep, 2017, 7: 8903.

    | 标签: 传感器

    Journal Article

    Wang H, Hong J, Yue F, Jing C, Chu J H
    Optical homogeneity analysis of Hg1-xCdxTe epitaxial layers: How to circumvent the influence of impurity absorption bands?
    Infrared Physics & Technology, 2017, 82: 1-7.

    | 标签: 传感器

    Journal Article

    Wang F, Wang J, Guo S, Zhang J, Hu Z, Chu J H
    Tuning Coupling Behavior of Stacked Heterostructures Based on MoS2, WS2, and WSe2
    Scientific Reports, 2017, 7: 44712

    | 标签: 传感器

    Journal Article

    Tian B, Nukala P, Hassine M B, Zhao X, Wang X, Shen H, Wang J, Sun S, Lin T, Sun J, Ge J, Huang R, Duan C, Reiss T, Varela M, Dkhil B, Meng X, Chu J H
    Interfacial memristors in Al-LaNiO3 heterostructures
    Phys Chem Chem Phys, 2017, 19: 16960-16968.

    | 标签: 传感器

    Journal Article

    Sun Y B, Xu W L, Fu X H, Sun Z H, Wang J Y, Zhang J Z, Rosenbach D, Qi R J, Jiang K, Jing C B, Hu Z G, Ma X M, Chu J H
    Evaluation of lattice dynamics, infrared optical properties and visible emissions of hexagonal GeO2 films prepared by liquid phase deposition
    Journal of Materials Chemistry C, 2017, 5: 12792-12799.

    | 标签: 传感器

    Journal Article

    Sun L, Ma J H, Yao N J, Huang Z M, Chu J H
    Influence of various Cu contents on the microstructure of Cu( In, Ga)Se-2 thin films
    Journal of Infrared and Millimeter Waves, 2017, 36: 1.

    | 标签: 传感器

    Journal Article

    Sun L, Fang Y W, He J, Zhang Y Y, Qi R J, He Q, Huang R, Xiang P H, Tang X D, Yang P X, Chu J H, Chu Y H, Duan C G
    The preparation, and structural and multiferroic properties of B-site ordered double-perovskite Bi2FeMnO6
    Journal of Materials Chemistry C, 2017, 5: 5494-5500.

    | 标签: 传感器

    Journal Article

    Song Z Y, Shang L Y, Lin T, Wei Y F, Chu J H
    Maximum entropy mobility spectrum analysis of LPE-grown and anodic oxidated Hg1-xCdxTe(x=0.237)
    Journal of Physics: Conference Series, 2017, 864: 012026.

    | 标签: 传感器

    Journal Article

    Shen D P, Zhang X D, Sun Y, Kang T T, Dai N, Chu J H, Yu G L
    Magnetotransport property of negative band gap HgCdTe bulk material
    Acta Physica Sinica, 2017, 66: 247301.

    | 标签: 传感器

    Journal Article

    Sha T T, Li W W, Chen S Y, Jiang K, Zhu J J, Hu Z G, Huang Z M, Chu J H, Kokh K A, Andreev Y M
    Effects of S-doping on the electronic transition, band gap, and optical absorption of GaSe1-xSx single crystals
    Journal of Alloys and Compounds, 2017, 721: 164-171.

    | 标签: 传感器

    Journal Article

    Qiao Q, Xu D, Li Y W, Zhang J Z, Hu Z G, Chu J H
    Detection of resistive switching behavior based on the Al2O3/ZnO/Al2O3 structure with alumina buffers
    Thin Solid Films, 2017, 623: 8-13.

    | 标签: 传感器

    Journal Article

    Qiao Q, Li Y W, Zhang J Z, Hu Z G, Chu J H
    Experimental investigations of the bismuth oxide film grown by atomic layer deposition using triphenyl bismuth
    Thin Solid Films, 2017, 622: 65-70.

    | 标签: 传感器

    Journal Article

    Qiao Q, Jin L P, Li Y W, Li M J, Hu Z G, Chu J H
    Influence of composition on structure, morphology and dielectric properties of BixAlyOz composite films synthesized by atomic layer deposition
    Aip Advances, 2017, 7: 045120.

    | 标签: 传感器

    Journal Article

    Meng Y H, Bai W, Gao H, Gong S J, Wang J Q, Duan C G, Chu J H
    Ferroelectric control of Rashba spin orbit coupling at the GeTe(111)/InP(111) interface
    Nanoscale, 2017, 9: 17957-17962.

    | 标签: 传感器

    Journal Article

    Meng X K, Deng H M, Zhang Q, Sun L, Yang P X, Chu J H
    Investigate the growth mechanism of Cu2FeSnS4 thin films by sulfurization of metallic precursor
    Materials Letters, 2017, 186: 138-141.

    | 标签: 传感器

    Journal Article

    Luo C, Wang C, Wu X, Zhang J, Chu J H
    In Situ Transmission Electron Microscopy Characterization and Manipulation of Two-Dimensional Layered Materials beyond Graphene
    Small, 2017, 13: 1604259.

    | 标签: 传感器

    Journal Article

    Liu S, Wu X, Zhang D, Guo C, Wang P, Hu W, Li X, Zhou X, Xu H, Luo C, Zhang J, Chu J H
    Ultrafast Dynamic Pressure Sensors Based on Graphene Hybrid Structure
    Acs Applied Materials & Interfaces, 2017, 9: 24148-24154.

    | 标签: 传感器

    Journal Article

    Liu L, Wang X D, Han L, Tian B B, Chen Y, Wu G J, Li D, Yan M G, Wang T, Sun S O, Shen H, Lin T, Sun J L, Duan C G, Wang J L, Meng X J, Chu J H
    Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate
    Aip Advances, 2017, 7: 065121.

    | 标签: 传感器

    Journal Article

    Li X R, Cao H Y, Dong Y C, Yue F Y, Chen Y, Xiang P H, Sun L, Yang P X, Chu J H
    Investigation of Cu2ZnSnS4 thin films with controllable Cu composition and its influence on photovoltaic properties for solar cells
    Journal of Alloys and Compounds, 2017, 694: 833-840.

    | 标签: 传感器

    Journal Article

    Li W W, Sha T T, Wang Y, Yu W L, Jiang K, Zhou H, Liu C, Hu Z G, Chu J H
    Effects of deposition methods and processing techniques on band gap, interband electronic transitions, and optical absorption in perovskite CH3NH3PbI3 films
    Applied Physics Letters, 2017, 111: 011906.

    | 标签: 传感器

    Journal Article

    Li S M, Ma G H, Wang C, Zhao W C, Chen X S, Chu J H, Dai N, Shi W Z, Hu G J
    Electrical and optical properties of a kind of ferroelectric oxide films comprising of PbZr0.4Ti0.6O3 stacks
    Journal of Applied Physics, 2017, 122: 024102.

    | 标签: 传感器

    Journal Article

    Li S M, Hu G J, Wang C, Zhao W C, Ma G H, Chen X S, Chu J H, Dai N
    PbZr0.4Ti0.6O3 dielectric reflectors with large photonic band gap and high average optical reflectivity
    Journal of the American Ceramic Society, 2017, 100: 1275-1279.

    | 标签: 传感器

    Journal Article

    Li Q Q, Wang J Y, Li M J, Guo S, Zhang J Z, Hu Z G, Zhou Z Y, Wang G S, Dong X L, Chu J H
    Structure evolution mechanism of Na0.5Bi2.5Nb2-xWxO9+delta ferroelectric ceramics: Temperature-dependent optical evidence and first-principles calculations
    Physical Review B, 2017, 96: 024101.

    | 标签: 传感器

    Journal Article

    Li M, Wang J, Zhang P, Deng Q, Zhang J, Jiang K, Hu Z, Chu J H
    Superior adsorption and photoinduced carries transfer behaviors of dandelion-shaped Bi2S3@MoS2: experiments and theory
    Sci Rep, 2017, 7: 42484.

    | 标签: 传感器

    Conference

    Jing W, Zhiming H, Yanqing G, Chu J H
    Flexible thermistors for far infrared detection: MCNO films with low resistivity and high TCR deposited on flexible organic sheets
    2017 42nd International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) Cancun, Mexico, 27 Aug.-1 Sept. 2017

    | 标签: 传感器

    Journal Article

    Guo S, Li M J, Li Q Q, Hu Z G, Li T, Wu L C, Song Z T, Chu J H
    Localized states evolution and nitrides separation before crystallization in nitrogen incorporated GeTe: Evidence from ellipsometric spectra
    Applied Physics Letters, 2017, 110: 161906.

    | 标签: 传感器

    Journal Article

    Guo H, Wang L, Wang X, Yang P, Jing C, Chu J H
    Fabrication and light capturing performance of stainless steel hollow fiber silicon solar cells
    Material Science and Technology, 2017, 25: 48-54.

    | 标签: 传感器

    Journal Article

    Guo B L, Deng H M, Zhai X Z, Zhou W H, Meng X K, Weng G E, Chen S Q, Yang P X, Chu J H
    Cr doping-induced structural phase transition, optical tuning and magnetic enhancement in BiFeO3 thin films
    Materials Letters, 2017, 186: 198-201.

    | 标签: 传感器

    Journal Article

    Guan Z, Jiang Z Z, Tian B B, Zhu Y P, Xiang P H, Zhong N, Duan C G, Chu J H
    Identifying intrinsic ferroelectricity of thin film with piezoresponse force microscopy
    Aip Advances, 2017, 7: 095116.

    | 标签: 传感器

    Journal Article

    Deng Q L, Li M J, Wang J Y, Zhang P, Jiang K, Zhang J Z, Hu Z G, Chu J H
    Boosted adsorption-photocatalytic activities and potential lithium intercalation applications of layered potassium hexaniobate nano-family
    Rsc Advances, 2017, 7: 28105-28113.

    | 标签: 传感器

    Journal Article

    Deng Q, Li M, Wang J, Zhang P, Jiang K, Zhang J, Hu Z, Chu J H
    Exploring optoelectronic properties and mechanisms of layered ferroelectric K4Nb6O17 nanocrystalline films and nanolaminas
    Sci Rep, 2017, 7: 1883.

    | 标签: 传感器

    Journal Article

    Cui A Y, Jiang K, Zhang P, Xu L P, Xu G S, Chen X M, Hu Z G, Chu J H
    In Situ Exploration of Thermal-Induced Domain Evolution with Phase Transition in LiNbO3-Modified K0.5Na0.5NbO3 Single Crystal
    Journal of Physical Chemistry C, 2017, 121: 14322-14329.

    | 标签: 传感器

    Journal Article

    Cheng L, Wei L M, Liang H X, Yan Y D, Cheng G H, Lv M, Lin T, Kang T T, Yu G L, Chu J H, Zhang Z Y, Zeng C G
    Optical Manipulation of Rashba Spin-Orbit Coupling at SrTiO3-Based Oxide Interfaces
    Nano Letters, 2017, 17: 6534-6539.

    | 标签: 传感器

    Journal Article

    Chen L L, Deng H M, Zhang Q, Yu J J, Tao J H, Sun L, Yang P X, Chu J H
    Microstructural and morphological properties of spin-coated Cu2MnSn (S,Se)(4) thin films for solar cell applications
    Materials Letters, 2017, 206: 249-252.

    | 标签: 传感器

    Journal Article

    Chen L L, Deng H M, Tao J H, Sun L, Yang P X, Chu J H
    Effect of the post-selenization time on the structural and optical properties of Cu2MnSn(S,Se)(4) thin films synthesized by sol-gel technique
    Materials Letters, 2017, 201: 185-188.

    | 标签: 传感器

    Journal Article

    Bai J W, Yang J, Zhang Y Y, Bai W, Lv Z F, Tang K, Sun J L, Meng X J, Tang X D, Chu J H
    The ac sub-coercive-field dielectric resonses of (Pb, Sr)TiO3 films at low temperature
    Ceramics International, 2017, 43: S516-S519.

    | 标签: 传感器

    Journal Article

    Xu, Hejun; Wu, Xing; Li, Xinming; Luo, Chen; Liang, Fang; Orignac, Edmond; Zhang, Jian; Chu, Junhao
    Properties of Graphene-metal Contacts Probed by Raman Spectroscopy
    In: ACS Nano, vol. 12, no. 7, pp. 7239-7245, 2018, ISSN: 1936-0851.

    Links | BibTeX | 标签: 石墨烯


    @article{nokey,
    title = {Properties of Graphene-metal Contacts Probed by Raman Spectroscopy},
    author = {Hejun Xu and Xing Wu and Xinming Li and Chen Luo and Fang Liang and Edmond Orignac and Jian Zhang and Junhao Chu},
    url = {http://www.insitudevices.com/wp-admin/admin.php?page=teachpress%2Faddpublications.php},
    doi = {10.1016/j.carbon.2017.11.035},
    issn = {0008-6223},
    year = {2017},
    date = {2017-11-15},
    urldate = {2017-11-15},
    journal = {Carbon},
    volume = {127},
    pages = {491-497},
    keywords = {石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Liu, Bao; Lu, Bin; Chen, Xiaoqiu; Wu, Xin; Shi, Shengjie; Xu, Lei; Liu, Yun; Wang, Feifei; Zhao, Xiangyong; Shi, Wangzhou
    A High-P erformance Flexible Piezoelectric Energy Harvester Based on Lead-Free (Na0.5Bi0.5)TiO3-BaTiO3 Piezoelectric Nanofibers
    In: Journal of Materials Chemistry A, vol. 5, no. 45, pp. 23634-23640, 2017, ISSN: 2050-7488.

    Links | BibTeX 标签:           


    @article{RN82,
    title = {A High-P erformance Flexible Piezoelectric Energy Harvester Based on Lead-Free (Na0.5Bi0.5)TiO3-BaTiO3 Piezoelectric Nanofibers},
    author = {Bao Liu and Bin Lu and Xiaoqiu Chen and Xin Wu and Shengjie Shi and Lei Xu and Yun Liu and Feifei Wang and Xiangyong Zhao and Wangzhou Shi},
    doi = {10.1039/c7ta07570g},
    issn = {2050-7488},
    year  = {2017},
    date = {2017-01-01},
    urldate = {2017-01-01},
    journal = {Journal of Materials Chemistry A},
    volume = {5},
    number = {45},
    pages = {23634-23640},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Liu, Shanbiao; Wu, Xing; Zhang, Dongdong; Guo, Congwei; Wang, Peng; Hu, Weida; Li, Xinming; Zhou, Xiaofeng; Xu, Hejun; Luo, Chen; Zhang, Jian; Chu, Junhao
    Ultrafast Dynamic Pressure Sensors Based on Graphene Hybrid Structure
    In: ACS Applied Materials & Interfaces, vol. 9, no. 28, pp. 24148-24154, 2017, ISSN: 1944-8244.

    Links | BibTeX 标签: 传感器石墨烯           

    @article{RN97,
    title = {Ultrafast Dynamic Pressure Sensors Based on Graphene Hybrid Structure},
    author = {Shanbiao Liu and Xing Wu and Dongdong Zhang and Congwei Guo and Peng Wang and Weida Hu and Xinming Li and Xiaofeng Zhou and Hejun Xu and Chen Luo and Jian Zhang and Junhao Chu},
    doi = {10.1021/acsami.7b07311},
    issn = {1944-8244},
    year  = {2017},
    date = {2017-01-01},
    urldate = {2017-01-01},
    journal = {ACS Applied Materials & Interfaces},
    volume = {9},
    number = {28},
    pages = {24148-24154},
    keywords = {传感器, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Luo, Chen; Wang, Chaolun; Wu, Xing; Zhang, Jian; Chu, Junhao
    In Situ Transmission Electron Microscopy Characterization and Manipulation of Two-Dimensional Layered Materials beyond Graphene
    In: Small, vol. 13, no. 35, 2017, ISSN: 1613-6810.

    Links | BibTeX 标签: 传感器           


    @article{RN86,
    title = {In Situ Transmission Electron Microscopy Characterization and Manipulation of Two-Dimensional Layered Materials beyond Graphene},
    author = {Chen Luo and Chaolun Wang and Xing Wu and Jian Zhang and Junhao Chu},
    doi = {10.1002/smll.201604259},
    issn = {1613-6810},
    year  = {2017},
    date = {2017-01-01},
    urldate = {2017-01-01},
    journal = {Small},
    volume = {13},
    number = {35},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Zhang, Feng; Chen, Cheng; Kershaw, Stephen V.; Xiao, Changtao; Han, Junbo; Zou, Bingsuo; Wu, Xing; Chang, Shuai; Dong, Yuping; Rogach, Andrey L.; Zhong, Haizheng
    Ligand-Controlled Formation and Photoluminescence Properties of CH3NH3PbBr3 Nanocubes and Nanowires
    In: Chemnanomat, vol. 3, no. 5, pp. 303-310, 2017, ISSN: 2199-692X.

    Links | BibTeX 标签:           


    @article{RN77,
    title = {Ligand-Controlled Formation and Photoluminescence Properties of CH3NH3PbBr3 Nanocubes and Nanowires},
    author = {Feng Zhang and Cheng Chen and Stephen V. Kershaw and Changtao Xiao and Junbo Han and Bingsuo Zou and Xing Wu and Shuai Chang and Yuping Dong and Andrey L. Rogach and Haizheng Zhong},
    doi = {10.1002/cnma.201700034},
    issn = {2199-692X},
    year  = {2017},
    date = {2017-01-01},
    urldate = {2017-01-01},
    journal = {Chemnanomat},
    volume = {3},
    number = {5},
    pages = {303-310},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }
    Conference

    Qin, Li; Zheyu, Liu; Fei, Qiao; Xing, Wu; Chaolun, Wang; Qi, Wei; Huazhong, Yang
    From MISSION IMPOSSIBLE to Mission Possible: Fully Flexible Intelligent Contact Lens for Image Classification with Analog-to-Information Processing
    2017 IEEE International Symposium on Circuits and Systems (ISCAS) , 2017.

    Links | BibTeX 标签: 传感器 芯片设计           


    @conference{RN200,
    title = {From MISSION IMPOSSIBLE to Mission Possible: Fully Flexible Intelligent Contact Lens for Image Classification with Analog-to-Information Processing},
    author = {Li Qin and Liu Zheyu and Qiao Fei and Wu Xing and Wang Chaolun and Wei Qi and Yang Huazhong},
    doi = {10.1109/iscas.2017.8050607},
    year  = {2017},
    date = {2017-01-01},
    urldate = {2017-01-01},
    booktitle = {2017 IEEE International Symposium on Circuits and Systems (ISCAS) },
    journal = {2017 IEEE International Symposium on Circuits and Systems (ISCAS)},
    pages = {4 pp.-4 pp.},
    keywords = {传感器, 芯片设计},
    pubstate = {published},
    tppubtype = {conference}
    }


  • 2016

    Journal Article

    Zhu L Q, Shao J, Zhu L, Chen X R, Lin T, Zhang Y Y, Li Y Q, Qi Z, Bai W, Tang X D, Chu J H
    Spin-glass state induced low field magnetization-step effect in a Hg1-xMnxTe single crystal
    Physica Status Solidi B-Basic Solid State Physics, 2016, 253: 2015-2019.

    | 标签: 传感器

    Journal Article

    Zhu L Q, Shao J, Chen X R, Li Y Q, Zhu L, Qi Z, Lin T, Bai W, Tang X D, Chu J H
    Photoinduced magnetization effect in a p-type Hg1-xMnxTe single crystal investigated by infrared photoluminescence
    Physical Review B, 2016, 94: 155201.

    | 标签: 传感器

    Journal Article

    Zhu J J, Zhang J Z, Jiang K, Zhang H W, Hu Z G, Luo H S, Chu J H
    Coexistence of Ferroelectric Phases and Phonon Dynamics in Relaxor Ferroelectric Na0.5Bi0.5TiO3 Based Single Crystals
    Journal of the American Ceramic Society, 2016, 99: 2408-2414.

    | 标签: 传感器

    Journal Article

    Zhou W L, Deng H M, Zheng T, Yang P X, Chu J H
    Pb-free semiconductor ferroelectrics: An experimental study of Ba(Ti0.75Ce0.125Pd0.125)O3-delta thin films
    Materials Letters, 2016, 177: 1-4.

    | 标签: 传感器

    Journal Article

    Zhou W L, Deng H M, Yang P X, Chu J H
    Optical modulation and magnetic transition in PbTi1-xPdxO3-delta ferroelectric thin films
    Ceramics International, 2016, 42: 17162-17167.

    | 标签: 传感器

    Zhou W L, Deng H M, Yang P X, Chu J H
    Investigation of microstructural and optical properties of (K,Ba)(Ni,Nb)O3-delta thin films fabricated by pulsed laser deposition
    Materials Letters, 2016, 181: 178-181.

    | 标签: 传感器

    Journal Article

    Zhou W, Deng H, Yang P, Chu J H
    Designing tunable band-gap and magnetization at room-temperature in Pb(Ti1-xMx)O3-delta(M= Ni and Pd) thin films
    Materials Letters, 2016, 185: 323-326.

    | 标签: 传感器

    Journal Article

    Zheng T, Deng H M, Zhou W L, Zhai X Z, Cao H Y, Yu L, Yang P X, Chu J H
    Bandgap modulation and magnetic switching in PbTiO3 ferroelectrics by transition elements doping
    Ceramics International, 2016, 42: 6033-6038.

    | 标签: 传感器

    Journal Article

    Zhang Y B, Tao J H, Chen Y F, Xiong Z, Zhong M, Feng Z Q, Yang P X, Chu J H
    A large-volume manufacturing of multi-crystalline silicon solar cells with 18.8% efficiency incorporating practical advanced technologies
    Rsc Advances, 2016, 6: 58046-58054.

    | 标签: 传感器

    Journal Article

    Zhang X L, Zhang J Z, Xu G S, Jiang K, Hu Z G, Chu J H
    Optical evidences for an intermediate phase in relaxor ferroelectric Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystals
    Aip Advances, 2016, 6: 025106.

    | 标签: 传感器

    Journal Article

    Zhang P, Li M, Deng Q, Zhang J, Wu J, Hu Z, Chu J H
    Spectral assignments in the infrared absorption region and anomalous thermal hysteresis in the interband electronic transition of vanadium dioxide films
    Phys Chem Chem Phys, 2016, 18: 6239-6246.

    | 标签: 传感器

    Journal Article

    Zhang J Z, Jiang K, Zhou Z Y, Hu Z G, Wang G S, Dong X L, Chu J H
    Lattice Dynamics, Dielectric Constants, and Phase Diagram of Bismuth Layered Ferroelectric Bi3Ti1-xWxNbO9+ Ceramics
    Journal of the American Ceramic Society, 2016, 99: 3610-3615.

    | 标签: 传感器

    Journal Article

    Zhang J Z, Jiang K, Hu Z G, Chu J H
    A novel technique for probing phase transitions in ferroelectric functional materials: Condensed matter spectroscopy
    Science China-Technological Sciences, 2016, 59: 1537-1548.

    | 标签: 传感器

    Journal Article

    Zhang H B, Qi R J, Ding N F, Huang R, Sun L, Duan C G, Fisher C A J, Chu J H, Ikuhara Y
    Elemental intermixing within an ultrathin SrRuO3 electrode layer in epitaxial heterostructure BaTiO3/SrRuO3/SrTiO3
    Aip Advances, 2016, 6: 015010.

    | 标签: 传感器

    Journal Article

    Yu L, Deng H M, Zhou W L, Zhang Q, Yang P X, Chu J H
    Effects of (Sm, Mn and Ni) co-doping on structural, optical and magnetic properties of BiFeO3 thin films fabricated by a sol-gel technique
    Materials Letters, 2016, 170: 85-88.

    | 标签: 传感器

    Journal Article

    Yu L, Deng H M, Zhou W L, Cao H Y, Zheng T, Yang P X, Chu J H
    Modified structure and optical properties of multiferroic Pb(Zr0.53Ti0.47)(x)(Fe0.5Nb0.5)((1-x))O-3 ceramics
    Ceramics International, 2016, 42: 917-922.

    | 标签: 传感器

    Journal Article

    Yu L, Deng H, Zhou W, Cao H, Zhai X, Yang P, Chu J H
    Influence of B site-cations on phase transition, magnetic switching and band-gap modulation in Pb(B′0.5B″0.5)O3–Pb(Zr0.53Ti0.47)O3 ceramics
    Ceramics International, 2016, 43: 2372-2378.

    | 标签: 传感器

    Journal Article

    Yin W H, Chen C, Bai W, Yang J, Zhang Y Y, Tang X D, Duan C G, Chu J H
    Dielectric behavior dependence on temperature and Cr-doping contents of Aurivillius Bi5Ti3FeO15 ceramics
    Ceramics International, 2016, 42: 4298-4305.

    | 标签: 传感器

    Journal Article

    Xu Z, Deng Q L, Zhang P, Zhang J Z, Li Y W, Hu Z G, Chu J H
    Concentration and temperature dependent double energy gap characteristic properties of hexagonal YMnO3-xBiFeO(3) films
    Journal of Physics D-Applied Physics, 2016, 49: 465302.

    | 标签: 传感器

    Journal Article

    Wu G, Wang X, Wang P, Huang H, Chen Y, Sun S, Shen H, Lin T, Wang J, Zhang S, Bian L, Sun J, Meng X, Chu JH
    Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer
    Nanotechnology, 2016, 27: 364002.

    | 标签: 传感器

    Journal Article

    Wang X D, Tang M H, Chen Y, Wu G J, Huang H, Zhao X L, Tian B B, Wang J L, Sun S, Shen H, Lin T, Sun J L, Meng X J, Chu J H
    Flexible graphene field effect transistor with ferroelectric polymer gate
    Optical and Quantum Electronics, 2016, 48: 345.

    | 标签: 传感器

    Journal Article

    Wang X, Guo H, Wang L, Yue F, Jing C, Chu J H
    Preparation and transmission characteristics of a mid-infrared attenuated total reflection hollow waveguide based on a stainless steel capillary tube
    Appl Opt, 2016, 55: 6404-6409.

    | 标签: 传感器

    Journal Article

    Wang W S, Hou Y, Zhang Z H, Zhou W, Gao Y Q, Wu J, Chu J H
    The structural and optical properties of Zn-x Ni(1-x) Mn-2 O-4 films grown on Pt/Ti/SiO2/Si substrate
    Journal of Infrared and Millimeter Waves, 2016, 35: 676-680.

    | 标签: 传感器

    Journal Article

    Wang W L, Khan K, Zhang X Y, Qin H M, Jiang J, Miao L J, Jiang K M, Wang P J, Dai M Z, Chu J H
    A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors (vol 60, pg 67, 2016)
    Microelectronics Reliability, 2016, 67: 159-159.

    | 标签: 传感器

    Journal Article

    Wang W, Khan K, Zhang X, Qin H, Jiang J, Miao L, Jiang K, Wang P, Dai M, Chu J H
    A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors
    Microelectronics Reliability, 2016, 60: 67-69.

    | 标签: 传感器

    Journal Article

    Tian B B, Wang J L, Fusil S, Liu Y, Zhao X L, Sun S, Shen H, Lin T, Sun J L, Duan C G, Bibes M, Barthelemy A, Dkhil B, Garcia V, Meng X J, Chu J H
    Tunnel electroresistance through organic ferroelectrics
    Nature Communications, 2016, 7: 11502

    | 标签: 传感器

    Journal Article

    Tao J H, Liu J F, Chen L L, Cao H Y, Meng X K, Zhang Y B, Zhang C J, Sun L, Yang P X, Chu J H
    7.1% efficient co-electroplated Cu2ZnSnS4 thin film solar cells with sputtered CdS buffer layers
    Green Chemistry, 2016, 18: 550-557.

    | 标签: 传感器

    Journal Article

    Tao J H, Chen L L, Cao H Y, Zhang C J, Liu J F, Zhang Y B, Huang L, Jiang J C, Yang P X, Chu J H
    Co-electrodeposited Cu2ZnSnS4 thin-film solar cells with over 7% efficiency fabricated via fine-tuning of the Zn content in absorber layers
    Journal of Materials Chemistry A, 2016, 4: 3798-3805.

    | 标签: 传感器

    Journal Article

    Tang K, Zhu X T, Zhu L Q, Bai W, Bai J W, Dong W X, Yang J, Zhang Y Y, Chen Y, Tang X D, Chu J H
    Stoichiometry dependence of the optical and minority -carrier lifetime behaviors of CdTe epitaxial films: A low -temperature and time-resolved photoluminescence study
    Applied Surface Science, 2016, 387: 477-482.

    | 标签: 传感器

    Journal Article

    Tang K, Zhu X T, Bai W, Zhu L Q, Bai J W, Dong W X, Yang J, Zhang Y Y, Tang X D, Chu J H
    Molecular beam epitaxial growth and optical properties of the CdTe thin films on highly mismatched SrTiO3 substrates
    Journal of Alloys and Compounds, 2016, 685: 370-375.

    | 标签: 传感器

    Journal Article

    Sun L, Ma J H, Yao N J, Huang Z M, Chu J H
    Copper content dependence of electrical properties and Raman spectra of Se-deficient Cu(In,Ga)Se-2 thin films for solar cells
    Journal of Materials Science-Materials in Electronics, 2016, 27: 9124-9130.

    | 标签: 传感器

    Journal Article

    Sun L, Lv M, Liu X, Xu Y, Wang R, Lin T, Yu G, Dai N, Chu J H
    Zeeman splitting and spin-orbit interaction in Hg1-xCdxTe inversion layers
    Epl, 2016, 115: 17007

    | 标签: 传感器

    Journal Article

    Peng L, Jiang K, Zhang J Z, Hu Z G, Wang G S, Dong X L, Chu J H
    Temperature-dependent phonon Raman scattering and spectroscopic ellipsometry of pure and Ca-doped SrxBa1-xNb2O6 ferroelectric ceramics across the phase transition region
    Journal of Physics D-Applied Physics, 2016, 49: 035307.

    | 标签: 传感器

    Journal Article

    Meng X K, Deng H M, Tao J H, Cao H Y, Li X R, Sun L, Yang P X, Chu J H
    Heating rate tuning in structure, morphology and electricity properties of Cu2FeSnS4 thin films prepared by sulfurization of metallic precursors
    Journal of Alloys and Compounds, 2016, 680: 446-451.

    | 标签: 传感器

    Journal Article

    Lv M, Wang R, Wei L M, Yu G L, Lin T, Dai N, Chu J H, Lockwood D J
    Strained HgTe plates grown on SrTiO3 investigated by micro-Raman mapping
    Journal of Applied Physics, 2016, 120: 115304.

    | 标签: 传感器

    Journal Article

    Luo M, Shen Y H, Chu J H
    First-principles study of the magnetism of Ni-doped MoS2 monolayer
    Japanese Journal of Applied Physics, 2016, 55: 093001.

    | 标签: 传感器

    Journal Article

    Liu B L, Tian B B, Zhao X L, Wang J L, Sun S, Shen H, Sun J L, Meng X J, Chu J H
    Asymmetric capacitance-voltage curves induced by pinned interface dipoles in poly(vinylidene fluoride/trifluoroethylene) capacitor
    Journal of Infrared and Millimeter Waves, 2016, 35: 143-146.

    | 标签: 传感器

    Journal Article

    Li Y W, Qiao Q, Dong Z, Zhang J Z, Hu Z G, Chu J H
    Enhanced dielectric properties in bismuth-doped alumina films prepared by atomic layer deposition
    Journal of Non-Crystalline Solids, 2016, 443: 17-22.

    | 标签: 传感器

    Journal Article

    Li X R, Wang J Y, Zhang J Z, Li Y W, Hu Z G, Chu J H
    Spin-manipulated phonon dynamics during magnetic phase transitions in triangular lattice antiferromagnet CuCr1-xMgxO2 semiconductor films
    Rsc Advances, 2016, 6: 27136-27142.

    | 标签: 传感器

    Journal Article

    Li M J, Xu L P, Shi K, Zhang J Z, Chen X F, Hu Z G, Dong X L, Chu J H
    Interband electronic transitions and phase diagram of PbZr1-xTixO3 (0.05 <= x <= 0.70) ceramics: ellipsometric experiment and first-principles theory
    Journal of Physics D-Applied Physics, 2016, 49: 275305.

    | 标签: 传感器

    Journal Article

    Li G F, Ma G H, Ma H, Chu F H, Cui H Y, Liu W J, Song X J, Jiang Y H, Huang Z M, Chu J H
    Photocarrier dynamics in zinc selenide studied with optical-pump terahertz-probe spectroscopy
    Acta Physica Sinica, 2016, 65: 247201.

    | 标签: 传感器

    Journal Article

    Li C Q, Zhang J Z, Xu L P, Zhu J J, Duan Z H, Hu Z G, Chu J H
    Temperature dependent optical dispersion and electronic transitions of highly a-axis oriented 0.8Pb(Zn1/3Nb2/3)O-3-0.2PbTiO(3) films on SrTiO3 crystals: An ellipsometric evidence
    Thin Solid Films, 2016, 603: 14-20.

    | 标签: 传感器

    Journal Article

    Jiang K, Zhang P, Zhang J Z, Xu G S, Li W W, Hu Z G, Chu J H
    Relationship between negative thermal expansion and lattice dynamics in a tetragonal PbTiO3-Bi(Mg1/2Ti1/2)O-3 perovskite single crystal
    Rsc Advances, 2016, 6: 3159-3164.

    | 标签: 传感器

    Journal Article

    Huang Z, Zhou W, Tong J, Huang J, Ouyang C, Qu Y, Wu J, Gao Y, Chu J H
    Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection
    Adv Mater, 2016, 28: 112-117.

    | 标签: 传感器

    Journal Article

    Huang Z, Zhou W, Huang J, Wu J, Gao Y, Qu Y, Chu J H
    Directly tailoring photon-electron coupling for sensitive photoconductance
    Sci Rep, 2016, 6: 22938.

    | 标签: 传感器

    Journal Article

    Huang T, Zhang P, Xu L P, Chen C, Zhang J Z, Hu Z G, Luo H S, Chu J H
    Electronic structures and abnormal phonon behaviors of cobalt-modified Na0.5Bi0.5TiO3-6% BaTiO3 single crystals
    Aip Advances, 2016, 6: 105311.

    | 标签: 传感器

    Journal Article

    Huang H, Wang X D, Wang P, Wu G J, Chen Y, Meng C M, Liao L, Wang J L, Hu W D, Shen H, Lin T, Sun J L, Meng X J, Chen X S, Chu J H
    Ferroelectric polymer tuned two dimensional layered MoTe2 photodetector
    Rsc Advances, 2016, 6: 87416-87421.

    | 标签: 传感器

    Journal Article

    Huang H, Wang J, Hu W, Liao L, Wang P, Wang X, Gong F, Chen Y, Wu G, Luo W, Shen H, Lin T, Sun J, Meng X, Chen X, Chu J H
    Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect
    Nanotechnology, 2016, 27: 445201.

    | 标签: 传感器

    Journal Article

    Guo Y X, Cheng W J, Jiang J C, Zuo S H, Shi F W, Chu J H
    The structural, morphological and optical-electrical characteristic of Cu2XSnS4 (X:Cu,Mg) thin films fabricated by novel ultrasonic co-spray pyrolysis
    Materials Letters, 2016, 172: 68-71.

    | 标签: 传感器

    Journal Article

    Guo Y X, Cheng W J, Jiang J C, Zuo S H, Shi F W, Chu J H
    The effect of Cu/Mo bi-layer film on the structural, morphological and electro-optical characteristics of AZO/metal/AZO transparent conductive film
    Vacuum, 2016, 131: 164-169.

    | 标签: 传感器

    Journal Article

    Guo Y X, Cheng W J, Jiang J C, Chu J H
    The effect of substrate temperature, Cu/Sn ratio and post-annealing on the phase-change and properties of Cu2SnS3 film deposited by ultrasonic spray pyrolysis
    Journal of Materials Science-Materials in Electronics, 2016, 27: 4636-4646.

    | 标签: 传感器

    Journal Article

    Guo S, Xu L, Zhang J, Hu Z, Li T, Wu L, Song Z, Chu J H
    Enhanced Crystallization Behaviors of Silicon-Doped Sb2Te Films: Optical Evidences
    Sci Rep, 2016, 6: 33639.

    | 标签: 传感器

    Journal Article

    Guo S, Huang T, Xu L P, Shi K, Zhang J Z, Ji X L, Hu Z G, Wu L C, Song Z T, Chu J H
    Observation of an intermediate phase in tungsten doped Sb2Te phase change thin films by temperature dependent measurements of structural, optical, and electronic properties
    Journal of Physics D-Applied Physics, 2016, 49: 265105.

    | 标签: 传感器

    Journal Article

    Guo H, Wang X, Wang L, Yang P, Jing C, Chu J H
    Design,fabrication and characterization of titanium metallic hollow fiber organic perovskite solar cells
    Journal of Optoelectronics·Laser, 2016, 27: 1163-1168.

    | 标签: 传感器

    Journal Article

    Gong S J, Cai J, Yao Q F, Tong W Y, Wan X G, Duan C G, Chu J H
    Orbital control of Rashba spin orbit coupling in noble metal surfaces
    Journal of Applied Physics, 2016, 119: 125310.

    | 标签: 传感器

    Journal Article

    Ge J, Yu Y, Ke W, Li J, Tan X, Wang Z, Chu J H, Yan Y
    Improved Performance of Electroplated CZTS Thin-Film Solar Cells with Bifacial Configuration
    Chemsuschem, 2016, 9: 2149-2158.

    | 标签: 传感器

    Journal Article

    Dong Y C, He J, Li X R, Chen Y, Sun L, Yang P X, Chu J H
    Study on the preheating duration of Cu2SnS3 thin films using RF magnetron sputtering technique for photovoltaics
    Journal of Alloys and Compounds, 2016, 665: 69-75.

    | 标签: 传感器

    Journal Article

    Dong Y, Shen P, Li X, Chen Y, Sun L, Yang P, Chu J H
    Comparative study of the structural and optical properties of Cu2SnX3 and Cu2ZnSnX4 (X = S, Se) thin films and optoelectronic devices
    Materials Research Express, 2016, 3: 116411

    | 标签: 传感器

    Journal Article

    Ding X J, Guo S, Hu Z G, Chen X F, Wang G S, Dong X L, Chu J H
    The intermediate phase and low wavenumber phonon modes in antiferroelectric (Pb0.97La0.02) (Zr0.60Sn0.40-yTiy)O-3 ceramics discovered from temperature dependent Raman spectra
    Journal of Alloys and Compounds, 2016, 667: 310-316.

    | 标签: 传感器

    Journal Article

    Dai M, Khan K, Zhang S, Jiang K, Zhang X, Wang W, Liang L, Cao H, Wang P, Wang P, Miao L, Qin H, Jiang J, Xue L, Chu J H
    A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy
    Scientific Reports, 2016, 6: 24096

    | 标签: 传感器

    Journal Article

    Cui L J, Zeng Y P, Zhang Y, Zhou W Z, Shang L Y, Lin T, Chu J H
    Beating patterns in the Shubnikov-de Haas oscillations originated from spin splitting in In0.52Al0.48As/In0.65Ga0.35As heterostructures: Experiment and calculation
    Physica E-Low-Dimensional Systems & Nanostructures, 2016, 83: 114-118.

    | 标签: 传感器

    Journal Article

    Cui J Y, Yang P X, Chu J H
    Influence of Ce and Ni co-doping on structural, optical and magnetic properties of BiFeO3 thin films
    Journal of Infrared and Millimeter Waves, 2016, 35: 322.

    | 标签: 传感器

    Journal Article

    Chen Y, Wang X, Wang P, Huang H, Wu G, Tian B, Hong Z, Wang Y, Sun S, Shen H, Wang J, Hu W, Sun J, Meng X, Chu J H
    Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer
    ACS Appl Mater Interfaces, 2016, 8: 32083-32088.

    | 标签: 传感器

    Journal Article

    Chen L L, Deng H M, Tao J H, Cao H Y, Sun L, Yang P X, Chu J H
    Strategic improvement of Cu2MnSnS4 films by two distinct post annealing processes for constructing thin film solar cells
    Acta Materialia, 2016, 109: 1-7.

    | 标签: 传感器

    Journal Article

    Chen C, Song K, Bai W, Yang J, Zhang Y Y, Xiang P H, Qin M Y, Tang X D, Chu J H
    Effect of Nb and more Fe ions co-doping on the microstructures, magnetic, and piezoelectric properties of Aurivillius Bi5Ti3FeO15 phases
    Journal of Applied Physics, 2016, 120: 214104.

    | 标签: 传感器

    Journal Article

    Cao H Y, Deng H M, Chen L L, Tao J H, Meng X K, Liu J, Yue F Y, Sun L, Yang P X, Chu J H
    Antimony-induced grain growth and properties modification of Cu(In, Al)Se-2 thin films fabricated by selenization of sputtered stacked precursors
    Journal of Alloys and Compounds, 2016, 689: 21-29.

    | 标签: 传感器

    Journal Article

    Bai W, Chen C, Tang K, Yang J, Tang X, Chu J H
    Sintering, Structural and Optical Properties of Aurivillius Bi4LaTi3TMO15 (TM = Co, Cr, Fe, Mn and Ni) Ceramics
    Ferroelectrics, 2016, 492: 109-116.

    | 标签: 传感器

    Journal Article

    Fang, Hehai; Hu, Weida; Wang, Peng; Guo, Nan; Luo, Wenjin; Zheng, Dingshan; Gong, Fan; Luo, Man; Tian, Hongzheng; Zhang, Xutao; Luo, Chen; Wu, Xing; Chen, Pingping; Liao, Lei; Pan, Anlian; Chen, Xiaoshuang; Lu, Wei
    Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire
    In: Nano Letters, vol. 16, no. 10, pp. 6416-6424, 2016, ISSN: 1530-6984.

    Links | BibTeX 标签:           


    @article{RN64,
    title = {Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire},
    author = {Hehai Fang and Weida Hu and Peng Wang and Nan Guo and Wenjin Luo and Dingshan Zheng and Fan Gong and Man Luo and Hongzheng Tian and Xutao Zhang and Chen Luo and Xing Wu and Pingping Chen and Lei Liao and Anlian Pan and Xiaoshuang Chen and Wei Lu},
    doi = {10.1021/acs.nanolett.6b02860},
    issn = {1530-6984},
    year  = {2016},
    date = {2016-01-01},
    urldate = {2016-01-01},
    journal = {Nano Letters},
    volume = {16},
    number = {10},
    pages = {6416-6424},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Liu, Y. W.; Yuan, X.; Zhang, C.; Jin, Z.; Narayan, A.; Luo, C.; Chen, Z. G.; Yang, L.; Zou, J.; Wu, X.; Sanvito, S.; Xia, Z. C.; Li, L.; Wang, Z.; Xiu, F. X.
    Zeeman Splitting and Dynamical Mass Generation in Dirac Semimetal ZrTe5
    In: Nature Communications, vol. 7, 2016, ISSN: 2041-1723.

    Abstract | Links | BibTeX 标签: 传感器           

    Dirac semimetals have attracted extensive attentions in recent years. It has been theoretically suggested that many-body interactions may drive exotic phase transitions, spontaneously generating a Dirac mass for the nominally massless Dirac electrons. So far, signature of interaction-driven transition has been lacking. In this work, we report high-magnetic-field transport measurements of the Dirac semimetal candidate ZrTe5. Owing to the large g factor in ZrTe5, the Zeeman splitting can be observed at magnetic field as low as 3 T. Most prominently, high pulsed magnetic field up to 60 T drives the system into the ultra-quantum limit, where we observe abrupt changes in the magnetoresistance, indicating field-induced phase transitions. This is interpreted as an interaction-induced spontaneous mass generation of the Dirac fermions, which bears resemblance to the dynamical mass generation of nucleons in high-energy physics. Our work establishes Dirac semimetals as ideal platforms for investigating emerging correlation effects in topological matters.


    @article{RN63,
    title = {Zeeman Splitting and Dynamical Mass Generation in Dirac Semimetal ZrTe5},
    author = {Y. W. Liu and X. Yuan and C. Zhang and Z. Jin and A. Narayan and C. Luo and Z. G. Chen and L. Yang and J. Zou and X. Wu and S. Sanvito and Z. C. Xia and L. Li and Z. Wang and F. X. Xiu},
    doi = {10.1038/ncomms12516},
    issn = {2041-1723},
    year  = {2016},
    date = {2016-01-01},
    urldate = {2016-01-01},
    journal = {Nature Communications},
    volume = {7},
    abstract = {Dirac semimetals have attracted extensive attentions in recent years. It has been theoretically suggested that many-body interactions may drive exotic phase transitions, spontaneously generating a Dirac mass for the nominally massless Dirac electrons. So far, signature of interaction-driven transition has been lacking. In this work, we report high-magnetic-field transport measurements of the Dirac semimetal candidate ZrTe5. Owing to the large g factor in ZrTe5, the Zeeman splitting can be observed at magnetic field as low as 3 T. Most prominently, high pulsed magnetic field up to 60 T drives the system into the ultra-quantum limit, where we observe abrupt changes in the magnetoresistance, indicating field-induced phase transitions. This is interpreted as an interaction-induced spontaneous mass generation of the Dirac fermions, which bears resemblance to the dynamical mass generation of nucleons in high-energy physics. Our work establishes Dirac semimetals as ideal platforms for investigating emerging correlation effects in topological matters.},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Shi, Huimin; Wang, Xuejiao; Zheng, Mengjie; Wu, Xing; Chen, Yiqin; Yang, Zhengmei; Zhang, Guanhua; Duan, Huigao
    Hot-Electrons Mediated Efficient Visible-Light Photocatalysis of Hierarchical Black Au-TiO2 Nanorod Arrays on Flexible Substrate
    In: Advanced Materials Interfaces, vol. 3, no. 22, 2016, ISSN: 2196-7350.

    Links | BibTeX 标签:           


    @article{RN74,
    title = {Hot-Electrons Mediated Efficient Visible-Light Photocatalysis of Hierarchical Black Au-TiO2 Nanorod Arrays on Flexible Substrate},
    author = {Huimin Shi and Xuejiao Wang and Mengjie Zheng and Xing Wu and Yiqin Chen and Zhengmei Yang and Guanhua Zhang and Huigao Duan},
    doi = {10.1002/admi.201600588},
    issn = {2196-7350},
    year  = {2016},
    date = {2016-01-01},
    urldate = {2016-01-01},
    journal = {Advanced Materials Interfaces},
    volume = {3},
    number = {22},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Zheng, D. S.; Wang, J. L.; Hu, W. D.; Liao, L.; Fang, H. H.; Guo, N.; Wang, P.; Gong, F.; Wang, X. D.; Fan, Z. Y.; Wu, X.; Meng, X. J.; Chen, X. S.; Lu, W.
    When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors
    In: Nano Letters, vol. 16, no. 4, pp. 2548-2555, 2016, ISSN: 1530-6984.

    Abstract | Links | BibTeX 标签: 传感器           

    One-dimensional semiconductor nanowires (NWs) have been widely applied in photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier concentration at certain level results in appreciable dark current, which limits the detectivity of the devices. Here, we fabricated a novel type of ferroelectric-enhanced side-gated NW photodetectors. The intrinsic carriers in the NW channel can be fully depleted by the ultrahigh electrostatic field from polarization of P(VDF-TrFE) ferroelectric polymer. In this scenario, the dark current is significantly reduced and thus the sensitivity of the photodetector is increased even when the gate voltage is removed. Particularly, a single InP NW photodetector exhibits high-photoconductive gain of 4.2 x 10(5), responsivity of 2.8 x 10(5) A W-1, and specific detectivity (D*) of 9.1 x 10(15) Jones at lambda = 830 nm. To further demonstrate the universality of the configuration we also demonstrate ferroelectric polymer side-gated single CdS NW photodetectors with ultrahigh photoconductive gain of 1.2 x 10(7), responsivity of 5.2 x 10(6) A W-1 and D* up to 1.7 x 10(18) Jones at lambda = 520 nm. Overall, our work demonstrates a new approach to fabricate a controllable, full-depleted, and high-performance NW photodetector. This can inspire novel device structure design of high-performance optoelectronic devices based on semiconductor NWs.


    @article{RN59,
    title = {When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors},
    author = {D. S. Zheng and J. L. Wang and W. D. Hu and L. Liao and H. H. Fang and N. Guo and P. Wang and F. Gong and X. D. Wang and Z. Y. Fan and X. Wu and X. J. Meng and X. S. Chen and W. Lu},
    doi = {10.1021/acs.nanolett.6b00104},
    issn = {1530-6984},
    year  = {2016},
    date = {2016-01-01},
    urldate = {2016-01-01},
    journal = {Nano Letters},
    volume = {16},
    number = {4},
    pages = {2548-2555},
    abstract = {One-dimensional semiconductor nanowires (NWs) have been widely applied in photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier concentration at certain level results in appreciable dark current, which limits the detectivity of the devices. Here, we fabricated a novel type of ferroelectric-enhanced side-gated NW photodetectors. The intrinsic carriers in the NW channel can be fully depleted by the ultrahigh electrostatic field from polarization of P(VDF-TrFE) ferroelectric polymer. In this scenario, the dark current is significantly reduced and thus the sensitivity of the photodetector is increased even when the gate voltage is removed. Particularly, a single InP NW photodetector exhibits high-photoconductive gain of 4.2 x 10(5), responsivity of 2.8 x 10(5) A W-1, and specific detectivity (D*) of 9.1 x 10(15) Jones at lambda = 830 nm. To further demonstrate the universality of the configuration we also demonstrate ferroelectric polymer side-gated single CdS NW photodetectors with ultrahigh photoconductive gain of 1.2 x 10(7), responsivity of 5.2 x 10(6) A W-1 and D* up to 1.7 x 10(18) Jones at lambda = 520 nm. Overall, our work demonstrates a new approach to fabricate a controllable, full-depleted, and high-performance NW photodetector. This can inspire novel device structure design of high-performance optoelectronic devices based on semiconductor NWs.},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Zhu, L. S.; Zhang, J.; Xu, X. W.; Yu, Y. Z.; Wu, X.; Yang, T.; Wang, X. H.
    Room Temperature H-2 Detection Based on Pd/SiNWs/p-Si Schottky Diode Structure
    In: Sensors and Actuators B-Chemical, vol. 227, pp. 515-523, 2016, ISSN: 0925-4005.

    Links | BibTeX 标签: 传感器           


    @article{RN60,
    title = {Room Temperature H-2 Detection Based on Pd/SiNWs/p-Si Schottky Diode Structure},
    author = {L. S. Zhu and J. Zhang and X. W. Xu and Y. Z. Yu and X. Wu and T. Yang and X. H. Wang},
    doi = {10.1016/j.snb.2015.12.080},
    issn = {0925-4005},
    year  = {2016},
    date = {2016-01-01},
    urldate = {2016-01-01},
    journal = {Sensors and Actuators B-Chemical},
    volume = {227},
    pages = {515-523},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }


    @article{RN60,
    title = {Room Temperature H-2 Detection Based on Pd/SiNWs/p-Si Schottky Diode Structure},
    author = {L. S. Zhu and J. Zhang and X. W. Xu and Y. Z. Yu and X. Wu and T. Yang and X. H. Wang},
    doi = {10.1016/j.snb.2015.12.080},
    issn = {0925-4005},
    year  = {2016},
    date = {2016-01-01},
    urldate = {2016-01-01},
    journal = {Sensors and Actuators B-Chemical},
    volume = {227},
    pages = {515-523},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }


  • 2015

    Journal Article

    Zou Y H, Han L, Yuan G L, Wang J L, Sun S, Sun J L, Meng X J, Chu J H
    Bent Deformation's Impact on Ferroelectric and Pyroelectric Properties of the P(VDF-TrFE) Thin Films
    Ferroelectrics, 2015, 488: 154-161.

    | 标签: 传感器

    Journal Article

    Zhu Z, Chu J H
    Approximate analytical channel potential model of poly-Si thin film transistors operated in the strong inversion region under the high gate and low drain biases
    Journal of Physics: Conference Series, 2015, 574: 012100.

    | 标签: 传感器

    Journal Article

    Zhu L Q, Shao J, Zhu L, Chen X R, Qi Z, Lin T, Bai W, Tang X D, Chu J H
    Influence of local magnetization on acceptor-bound complex state in Hg1-xMnxTe single crystals
    Journal of Applied Physics, 2015, 118: 045707.

    | 标签: 传感器

    Journal Article

    Zhu J-J, Zhang J-Z, Xu G-S, Zhang X-L, Yu W-L, Hu Z-G, Chu J H
    UV-Vis-NIR optical properties of Pb(Mg-1/3 Nb-2/3) O-3-0. 3PbTiO(3) single crystal
    Journal of Infrared and Millimeter Waves, 2015, 34: 442-446.

    | 标签: 传感器

    Journal Article

    Zhu J J, Zhang J Z, Xu G S, Zhang X L, Hu Z G, Chu J H
    Phonon modes and local polar distortions in nanoclusters of Pb(In1/2Nb1/2) O-3-Pb(Mg1/3Nb2/3) O-3-PbTiO3 crystals probed by terahertz reflectance spectra and Raman scattering
    Laser Physics Letters, 2015, 12: 056103.

    | 标签: 传感器

    Journal Article

    Zhou W L, Deng H M, Yu L, Yang P X, Chu J H
    Magnetism switching and band-gap narrowing in Ni-doped PbTiO3 thin films
    Journal of Applied Physics, 2015, 117: 194102.

    | 标签: 传感器

    Journal Article

    Zhou W L, Deng H M, Yu L, Yang P X, Chu J H
    Band-gap narrowing and magnetic behavior of Ni-doped Ba(Ti0.875Ce0.125)O-3 thin films
    Journal of Physics D-Applied Physics, 2015, 48: 455308.

    | 标签: 传感器

    Journal Article

    Zhou W L, Deng H M, Ding N F, Yu L, Yue F Y, Yang P X, Chu J H
    Microstructure tuning and magnetism switching of ferroelectric barium titanate
    Materials Characterization, 2015, 107: 1-6.

    | 标签: 传感器

    Journal Article

    Zhou W L, Deng H M, Cao H Y, He J, Liu J, Yang P X, Chu J H
    Effects of Sm and Mn co-doping on structural, optical and magnetic properties of BiFeO3 films prepared by a sol-gel technique
    Materials Letters, 2015, 144: 93-96.

    | 标签: 传感器

    Journal Article

    Zhou W, Deng H, Yu L, Yang P, Chu J H
    Optical band-gap narrowing in perovskite ferroelectric ABO(3) ceramics (A=Pb, Ba; B=Ti) by ion substitution technique
    Ceramics International, 2015, 41: 13389-13392.

    | 标签: 传感器

    Journal Article

    Zhong N, Xiang P H, Zhang Y Y, Wu X, Tang X D, Yang P X, Duan C G, Chu J H
    Polarization fluctuation behavior of lanthanum substituted Bi4Ti3O12 thin films
    Journal of Applied Physics, 2015, 118: 104102.

    | 标签: 传感器

    Journal Article

    Zhao X L, Zhang Y, Wang J L, Zhan Q F, Wang X D, Huang H, Tian B B, Lin T, Sun S, Tian L, Han L, Sun J L, Meng X J, Chu J H
    Ferroelectric control of magnetism in P(VDF-TrFE)/Co heterostructure
    Journal of Materials Science-Materials in Electronics, 2015, 26: 7502-7506.

    | 标签: 传感器

    Journal Article

    Zhao X L, Wang J L, Tian B B, Liu B L, Wang X D, Huang H, Zou Y H, Sun S, Lin T, Han L, Sun J L, Meng X J, Chu J H
    High temperature coefficient of resistance for a ferroelectric tunnel junction
    Applied Physics Letters, 2015, 107: 062904.

    | 标签: 传感器

    Journal Article

    Zhao X L, Wang J L, Liu B L, Wang X D, Huang H, Lin T, Sun S H, Han L, Sun J L, Meng X J, Chu J H
    Properties of Tunability and Stored Energy Density in the Ferroelectric Multilayers
    Ferroelectrics, 2015, 488: 112-118.

    | 标签: 传感器

    Journal Article

    Zhao X G, Chu J H, Tang Z
    Magnetic Properties, Heisenberg Exchange Interaction, and Curie Temperature of CdS Nanoclusters
    Journal of Physical Chemistry C, 2015, 119: 29071-29075.

    | 标签: 传感器

    Journal Article

    Zhang Y B, Xu J M, Mao J, Tao J H, Shen H, Chen Y F, Feng Z Q, Verlinden P J, Yang P X, Chu J H
    Long-term reliability of silicon wafer-based traditional backsheet modules and double glass modules
    Rsc Advances, 2015, 5: 65768-65774.

    | 标签: 传感器

    Journal Article

    Zhang X L, Zhu J J, Xu G S, Zhang J Z, Xu L P, Hu Z G, Chu J H
    Temperature dependent spectroscopic ellipsometry and Raman scattering of PbTiO3-based relaxor ferroelectric single crystals around MPB region
    Optical Materials Express, 2015, 5: 2478-2490.

    | 标签: 传感器

    Journal Article

    Zhang X B, Xiong Z, Chen Y F, Feng Z Q, Yang P X, Chu J H
    Correlation between polycrystalline based solar cell conversion efficiency and crystallization defects
    Journal of Infrared and Millimeter Waves, 2015, 34: 551-+.

    | 标签: 传感器

    Journal Article

    Zhang P, Jiang K, Deng Q L, You Q H, Zhang J Z, Wu J D, Hu Z G, Chu J H
    Manipulations from oxygen partial pressure on the higher energy electronic transition and dielectric function of VO2 films during a metal-insulator transition process
    Journal of Materials Chemistry C, 2015, 3: 5033-5040.

    | 标签: 传感器

    Journal Article

    Zhang P, Huang T, You Q H, Zhang J Z, Li W W, Wu J D, Hu Z G, Chu J H
    Effects of crystal orientation on electronic band structure and anomalous shift of higher critical point in VO2 thin films during the phase transition process
    Journal of Physics D-Applied Physics, 2015, 48: 485302.

    | 标签: 传感器

    Journal Article

    Zhang K Z, He J, Wang W J, Sun L, Yang P X, Chu J H
    Cu2ZnSnS4 films fabricated by a simple sol-gel process without sulfurization
    Journal of Infrared and Millimeter Waves, 2015, 34: 129-133.

    | 标签: 传感器

    Journal Article

    Zhang J Z, Zhu J J, Deng Q L, Yu W L, Li Y W, Hu Z G, Meng X J, Chu J H
    The optical properties of La doped BiGaO3 polycrystalline films
    Journal of Infrared and Millimeter Waves, 2015, 34: 447-451.

    | 标签: 传感器

    Journal Article

    Zhang J Z, Tong W Y, Zhu J J, Xu J Y, Duan Z H, Xu L P, Hu Z G, Duan C G, Meng X J, Zhu Z Q, Chu J H
    Temperature-dependent lattice dynamics and electronic transitions in 0.93Pb(Zn1/3Nb2/3)O-3-0.07PbTiO(3) single crystals: Experiment and theory
    Physical Review B, 2015, 91: 085201.

    | 标签: 传感器

    Journal Article

    Zhang J, Deng H M, He J, Meng X K, Liu T T, Sun L, Yang P X, Chu J H
    Structural and electrical properties of CuIn1-xAlxSe2 thin films prepared by radio-frequency magnetron sputtering process
    Applied Surface Science, 2015, 326: 211-215.

    | 标签: 传感器

    Journal Article

    Zhai X Z, Deng H M, Zhou W L, Yang P X, Chu J H, Zheng Z
    Optical and magnetic properties of KBiFe2O5 thin films fabricated by chemical solution deposition
    Materials Letters, 2015, 161: 423-426.

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    Journal Article

    Zhai X Z, Deng H M, Zhou W L, Yang P X, Chu J H, Zheng Z
    Structural, optical and magnetic tunability in KBiFe2O5 multiferroics
    Rsc Advances, 2015, 5: 82351-82356.

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    Journal Article

    Zhai X Z, Deng H M, Zhou W L, Yang P X, Chu J H
    Strain-induced structural phase transition, ferromagnetic and optical properties of Bi1-xTbxFeO3 thin films
    Journal of Physics D-Applied Physics, 2015, 48: 385002.

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    Journal Article

    Zhai X Z, Deng H M, Yang P X, Chu J H
    Effect of Tb-doping on structural, magnetic and optical properties of BiFeO3 films prepared by chemical solution deposition
    Materials Letters, 2015, 158: 266-268.

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    Journal Article

    Yue F Y, Tomm J W, Kruschke D, Ullrich B, Chu J H
    Temperature dependence of the fundamental excitonic resonance in lead-salt quantum dots
    Applied Physics Letters, 2015, 107: 022106.

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    Journal Article

    Xu Y-G, Lv M, Chen J-X, Lin T, Yu G-L, Dai N, Chu J H
    Zero-field spin splitting and high-field g-factor of an asymmetrical In0.53Ga0.47As/In0.52Al0.48 As quantum well
    Journal of Infrared and Millimeter Waves, 2015, 34: 688-693.

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    Journal Article

    Xu W F, Yang J, Bai W, Zhang Y Y, Tang K, Duan C G, Tang X D, Chu J H
    Effects of aluminum substitution on the crystal structure and magnetic properties in Zn2Y-type hexaferrites
    Journal of Applied Physics, 2015, 117: 17d909.

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    Journal Article

    Xu L P, Jiang K, Zhang J Z, Xu G S, Hu Z G, Chu J H
    Phase transitions and thermotropic phase boundaries in MnO2-doped (K0.5Na0.5)NbO3-0.05LiNbO(3) single crystals: Raman scattering evidence at elevated temperatures
    Applied Physics Letters, 2015, 106: 122901.

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    Journal Article

    Xing S M, Shan C, Jiang K, Zhu J J, Li Y W, Hu Z G, Chu J H
    Optoelectronic properties and interband transition of La-doped BaSnO3 transparent conducting films determined by variable temperature spectral transmittance
    Journal of Applied Physics, 2015, 117: 103107.

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    Journal Article

    Wu J, Ouyang C, Zhou W, Gao Y Q, Hou Y, Huang Z M, Chu J H
    Optical properties of small polaron in Mn1.56Co0.96Ni0.48O4 films investigated by temperature-dependent transmission spectra
    Materials Research Express, 2015, 2: 026301.

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    Journal Article

    Wenliang Z, Hongmei D, Jun H, Jian L, Huiyi C, Xuezhen Z, Pingxiong Y, Chu J H
    Effects of Sm and Mn Co-Doping on Structural and Optical Properties of BiFeO3 Thin Films Prepared by Sol-Gel Technique
    Materials Science Forum, 2015, 815: 149-153.

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    Journal Article

    Wang X, Wang P, Wang J, Hu W, Zhou X, Guo N, Huang H, Sun S, Shen H, Lin T, Tang M, Liao L, Jiang A, Sun J, Meng X, Chen X, Lu W, Chu J H
    Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics
    Advanced Materials, 2015, 27: 6575.

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    Journal Article

    Tian L, Sun J L, Wang J L, Meng X J, Chu J H
    The performance of the free-standing P(VDF-TrFE) infrared detector
    Journal of Infrared and Millimeter Waves, 2015, 34: 654-657.

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    Journal Article

    Tian L, Sun J L, Wang J L, Meng X J, Chu J H
    Diffuse Phase Transition and Relaxor-Like Behavior in P(VDF-TrFE-CFE) Films Irradiated with Different Electron Dose
    Ferroelectrics, 2015, 488: 140-147.

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    Journal Article

    Tian L, Meng X J, Yang J, Sun J L, Wang J L, Chu J H
    Effects of Electron Irradiation on the Dielectric Behavior of Langmuir-Blodgett Terpolymer Films
    Ferroelectrics, 2015, 478: 81-87.

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    Journal Article

    Tian B B, Liu Y, Chen L F, Wang J L, Sun S, Shen H, Sun J L, Yuan G L, Fusil S, Garcia V, Dkhil B, Meng X J, Chu J H
    Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors
    Sci Rep, 2015, 5: 18297.

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    Journal Article

    Tian B B, Chen L F, Liu Y, Bai X F, Wang J L, Sun S, Yuan G L, Sun J L, Dkhil B, Meng X J, Chu J H
    Homogeneous switching mechanism in pure polyvinylidene fluoride ultrathin films
    Physical Review B, 2015, 92: 060102.

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    Journal Article

    Tian B B, Bai X F, Liu Y, Gemeiner P, Zhao X L, Liu B L, Zou Y H, Wang X D, Huang H, Wang J L, Sun S, Sun J L, Dkhil B, Meng X J, Chu J H
    beta phase instability in poly(vinylidene fluoride/trifluoroethylene) thin films near beta relaxation temperature
    Applied Physics Letters, 2015, 106: 092902.

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    Journal Article

    Tao J, Zhang K, Zhang C, Chen L, Cao H, Liu J, Jiang J, Sun L, Yang P, Chu J H
    A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency
    Chem Commun (Camb), 2015, 51: 10337-10340.

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    Journal Article

    Tang K, Bai W, Liu J, Yang J, Zhang Y Y, Duan C G, Tang X D, Chu J H
    The effect of Mn doping contents on the structural, dielectric and magnetic properties of multifenoic Bi5Ti3FeO15 Aurivillius ceramics
    Ceramics International, 2015, 41: S185-S190.

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    Journal Article

    Shi K, Peng L, Li M J, Zhou Z Y, Jiang K, Zhang J Z, Hu Z G, Dong X L, Chu J H
    Structural distortion, phonon behavior and electronic transition of Aurivillius layered ferroelectric CaBi2Nb2-xWxO9 ceramics
    Journal of Alloys and Compounds, 2015, 653: 168-174.

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    Journal Article

    Meng X K, Deng H M, Zhang J, Zhou W L, Tao J H, Sun L, Yue F Y, Yang P X, Chu J H
    Structural and optical tunability by reaction time of selenization in Cu2FeSnSe4 thin films
    Journal of Alloys and Compounds, 2015, 646: 68-72.

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    Journal Article

    Meng X K, Deng H M, Sun L, Yang P X, Chu J H
    Sulfurization temperature dependence of the structural transition in Cu2FeSnS4-based thin films
    Materials Letters, 2015, 161: 427-430.

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    Journal Article

    Meng X K, Deng H M, He J, Sun L, Yang P X, Chu J H
    Synthesis, structure, optics and electrical properties of Cu2FeSnS4 thin film by sputtering metallic precursor combined with rapid thermal annealing sulfurization process
    Materials Letters, 2015, 151: 61-63.

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    Journal Article

    Meng X K, Cao H Y, Deng H M, Zhou W L, Zhang J, Huang L, Sun L, Yang P X, Chu J H
    Structural, optical and electrical properties of Cu2FeSnSe4 and Cu(In,Al)Se-2 thin films
    Materials Science in Semiconductor Processing, 2015, 39: 243-250.

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    Journal Article

    Meng X K, Cao H Y, Deng H M, Zhou W L, Tao J H, Sun L, Yue F Y, Yang P X, Chu J H
    Synthesis and characterization of Cu-based selenide photovoltaic materials: Cu2FeSnSe4 and Cu(In, Al)Se-2
    Journal of Alloys and Compounds, 2015, 644: 354-362.

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    Journal Article

    Lv M, Yu G L, Xu Y G, Chang Z G, Lin T, Zhao D G, Dai N, Chu J H, Lockwood D J
    Dependence of spin dynamics on in-plane magnetic field in AlGaN/GaN quantum wells
    Epl, 2015, 112: 67003.

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    Journal Article

    Lv M, Wang H, Xu Y G, Yu G L, Zhang H H, Lin T, Hu G J, Dai N, Chu J H
    Long phase coherence length and anisotropic magnetoresistance in MgZnO thin film
    Journal of Applied Physics, 2015, 117: 155304.

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    Journal Article

    Liu T T, Deng H M, Cao H Y, Zhou W L, Zhang J, Liu J, Yang P X, Chu J H
    Structural, optical and electrical properties of Sb2Te3 films prepared by pulsed laser deposition
    Journal of Crystal Growth, 2015, 416: 78-81.

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    Journal Article

    Liu J, Deng H M, Zhai X Z, Cao H Y, Yang P X, Chu J H
    Influence of Eu doping on structural and optical properties of BiFeO3 films deposited on quartz substrates by pulsed laser deposition method
    Journal of Materials Science-Materials in Electronics, 2015, 26: 2977-2981.

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    Journal Article

    Liu B L, Tian B B, Sun J L, Liu Y, Wang J L, Sun S, Meng X J, Chu J H
    Confinement effect on coercive field in relaxor terpolymer nanowires
    Applied Surface Science, 2015, 355: 473-476.

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    Journal Article

    Li Y W, Qiao Q, Zhang J Z, Hu Z G, Chu J H
    Influence of post-annealing on structural, electrical and optical properties of manganese oxide thin films grown by atomic layer deposition
    Thin Solid Films, 2015, 574: 115-119.

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    Journal Article

    Li C Q, Yao Q R, Zhang J Z, Hu Z G, Wang F F, Liu A Y, Shi W Z, Chu J H
    Dramatic influence of Dy3+ doping on strain and domain structure in lead-free piezoelectric 0.935(Na1/2Bi1/2)TiO3-0.065BaTiO(3) ceramics
    Aip Advances, 2015, 5: 127118.

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    Journal Article

    Li C Q, Peng L, Wang P, Jiang K, Liu A Y, Hu Z G, Chu J H
    Thermotropic phase transitions in Pb1-xSrx(Al1/3Nb2/3)(0.1)(Zr0.52Ti0.48)(0.9)O-3 ceramics: Temperature dependent dielectric permittivity and Raman scattering
    Aip Advances, 2015, 5: 067122.

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    Journal Article

    Jiang K, Zhao R, Zhang P, Deng Q, Zhang J, Li W, Hu Z, Yang H, Chu J H
    Strain and temperature dependent absorption spectra studies for identifying the phase structure and band gap of EuTiO3 perovskite films
    Phys Chem Chem Phys, 2015, 17: 31618-31623.

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    Journal Article

    Huang Z, Zhou W, Ouyang C, Wu J, Zhang F, Huang J, Gao Y, Chu J H
    High performance of Mn-Co-Ni-O spinel nanofilms sputtered from acetate precursors
    Sci Rep, 2015, 5: 10899.

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    Journal Article

    Huang T, Guo S, Xu L P, Chen C, Hu Z G, Luo H S, Chu J H
    Low temperature structural variations of Na0.5Bi0.5TiO3-7% BaTiO3 single crystal: Evidences from optical ellipsometry and Raman scattering
    Journal of Applied Physics, 2015, 117: 224103.

    | 标签: 传感器

    Journal Article

    Huang L, Deng H M, He J, Meng X K, Tao J H, Cao H Y, Sun L, Yang P X, Chu J H
    Cu content dependence of morphological, structural and optical properties for Cu2ZnGeS4 thin films synthesized by sulfurization of sputtered precursors
    Materials Letters, 2015, 159: 1-4.

    | 标签: 传感器

    Journal Article

    Huang L, Deng H M, He J, Meng X K, Sun L, Yang P X, Chu J H
    Synthesis of Cu2ZnGeS4 thin film via sulfurization of RF magnetron sputtered precursor
    Journal of Materials Science-Materials in Electronics, 2015, 26: 3984-3988.

    | 标签: 传感器

    Journal Article

    Huang H, Wang P, Gao Y Q, Wang X D, Lin T, Wang J L, Liao L, Sun J L, Meng X J, Huang Z M, Chen X S, Chu J H
    Highly sensitive phototransistor based on GaSe nanosheets
    Applied Physics Letters, 2015, 107: 143112.

    | 标签: 传感器

    Journal Article

    He X F, Xu J, Xu X F, Gu C C, Chen F, Wu B H, Wang C R, Xing H Z, Chen X S, Chu J H
    Negative capacitance switching via VO2 band gap engineering driven by electric field
    Applied Physics Letters, 2015, 106: 093106.

    | 标签: 传感器

    Journal Article

    He X, Zeng Y, Xu X, Gu C, Chen F, Wu B, Wang C, Xing H, Chen X, Chu J H
    Orbital change manipulation metal-insulator transition temperature in W-doped VO2
    Phys Chem Chem Phys, 2015, 17: 11638-11646.

    | 标签: 传感器

    Journal Article

    He J, Sun L, Chen Y, Jiang J C, Yang P X, Chu J H
    Influence of sulfurization pressure on Cu2ZnSnS4 thin films and solar cells prepared by sulfurization of metallic precursors
    Journal of Power Sources, 2015, 273: 600-607.

    | 标签: 传感器

    Journal Article

    Guo S, Ding X J, Zhang J Z, Hu Z G, Ji X L, Wu L C, Song Z T, Chu J H
    Intrinsic evolutions of dielectric function and electronic transition in tungsten doping Ge2Sb2Te5 phase change films discovered by ellipsometry at elevated temperatures
    Applied Physics Letters, 2015, 106: 052105.

    | 标签: 传感器

    Journal Article

    Guo H, Liang C, Hua X, Ma H, Guo W, Jing C, Chu J H
    Elastic bending radius calculation of metallic attenuated total reflection GeO_2 hollow optical fibers
    Journal of Optoelectronics·Laser, 2015, 26: 392-396.

    | 标签: 传感器

    Journal Article

    Ge J, Chu J H, Yan Y, Jiang J, Yang P
    Co-electroplated Kesterite Bifacial Thin-Film Solar Cells: A Study of Sulfurization Temperature
    ACS Appl Mater Interfaces, 2015, 7: 10414-10428.

    | 标签: 传感器

    Journal Article

    Ge J, Chu J H, Jiang J C, Yan Y F, Yang P X
    The Interfacial Reaction at ITO Back Contact in Kesterite CZTSSe Bifacial Solar Cells
    Acs Sustainable Chemistry & Engineering, 2015, 3: 3043-3052.

    | 标签: 传感器

    Conference

    Gao Y, Huang Z, Hou Y, Wu J, Zhou W, Ouyang C, Chu J H
    Infrared ellipsometric spectroscopy of Mn1.56Co0.96Ni0.48O4 thin films with different layers
    2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),IEEE, Hong Kong, China, 23-28 Aug. 2015.

    | 标签: 传感器

    Journal Article

    Dong Y C, He J, Tao J H, Sun L, Yang P X, Chu J H
    Influence of different S/Se ratio on the properties of Cu2Sn(SxSe1-x)(3) thin films fabricated by annealing stacked metal precursors
    Journal of Materials Science-Materials in Electronics, 2015, 26: 6723-6729.

    | 标签: 传感器

    Journal Article

    Dong Y C, He J, Sun L, Chen Y, Yang P X, Chu J H
    Effect of sulfurization temperature on properties of Cu2SnS3 thin films and solar cells prepared by sulfurization of stacked metallic precursors
    Materials Science in Semiconductor Processing, 2015, 38: 171-176.

    | 标签: 传感器

    Journal Article

    Dong Y C, He J, Li X R, Zhou W L, Chen Y, Sun L, Yang P X, Chu J H
    Synthesis and optimized sulfurization time of Cu2SnS3 thin films obtained from stacked metallic precursors for solar cell application
    Materials Letters, 2015, 160: 468-471.

    | 标签: 传感器

    Journal Article

    Deng Q L, Zhang J Z, Huang T, Xu L P, Jiang K, Li Y W, Hu Z G, Chu J H
    Optoelectronic properties and polar nano-domain behavior of sol-gel derived K0.5Na0.5Nb1-xMnxO3-delta nanocrystalline films with enhanced ferroelectricity
    Journal of Materials Chemistry C, 2015, 3: 8225-8234.

    | 标签: 传感器

    Journal Article

    Cong W T, Tang Z, Zhao X G, Chu J H
    Enhanced magnetic anisotropies of single transition-metal adatoms on a defective MoS2 monolayer
    Sci Rep, 2015, 5: 9361.

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    Journal Article

    Cong R, Hu G J, Yu G L, Chu J H, Dai N
    Effect of polymer content on the optical properties of PbZr0.4 Ti-0.6 O-3 multilayers
    Journal of Infrared and Millimeter Waves, 2015, 34: 297-300.

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    Journal Article

    Chen L L, Deng H M, Tao J H, Zhou W L, Sun L, Yue F Y, Yang P X, Chu J H
    Influence of annealing temperature on structural and optical properties of Cu2MnSnS4 thin films fabricated by sol-gel
    Journal of Alloys and Compounds, 2015, 640: 23-28.

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    Journal Article

    Chen L L, Deng H M, Tao J H, Cao H Y, Huang L, Sun L, Yang P X, Chu J H
    Synthesis and characterization of earth-abundant Cu2MnSnS4 thin films using a non-toxic solution-based technique
    Rsc Advances, 2015, 5: 84295-84302.

    | 标签: 传感器

    Journal Article

    Chen L L, Deng H M, Cui J Y, Tao J H, Zhou W L, Cao H Y, Sun L, Yang P X, Chu J H
    Composition dependence of the structure and optical properties of Cu2MnxZn1-xSnS4 thin films
    Journal of Alloys and Compounds, 2015, 627: 388-392.

    | 标签: 传感器

    Journal Article

    Cao H Y, Deng H M, Zhou W L, Tao J H, Chen L L, Huang L, Sun L, Yue F Y, Yang P X, Chu J H
    Investigation of microstructural and optical properties of Cu(In, Al)Se-2 thin films with various copper content
    Journal of Alloys and Compounds, 2015, 651: 208-213.

    | 标签: 传感器

    Journal Article

    Cao H Y, Deng H M, Tao J H, Zhou W L, Meng X K, Sun L, Yang P X, Chu J H
    Microstructural and morphological properties of sputtered Cu(In, Al)Se-2 thin films for solar cell applications
    Materials Letters, 2015, 157: 42-44.

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    Journal Article

    Cao H Y, Deng H M, Cui J Y, Meng X K, Zhnag J, Sun L, Yang P X, Chu J H
    The influence of selenization temperatures on the structural and optical properties of Cu (In, Al) Se-2 thin films
    Journal of Infrared and Millimeter Waves, 2015, 34: 726-730.

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    Journal Article

    Cai Z H, Narang P, Atwater H A, Chen S Y, Duan C G, Zhu Z Q, Chu J H
    Cation-Mutation Design of Quaternary Nitride Semiconductors Lattice-Matched to GaN
    Chemistry of Materials, 2015, 27: 7757-7764.

    | 标签: 传感器

    Journal Article

    Bai W, Chen C, Yang J, Zhang Y, Qi R, Huang R, Tang X, Duan C G, Chu J H
    Dielectric behaviors of Aurivillius Bi5Ti3Fe0.5Cr0.5O15 multiferroic polycrystals: Determining the intrinsic magnetoelectric responses by impedance spectroscopy
    Sci Rep, 2015, 5: 17846.

    | 标签: 传感器

    Journal Article

    Deng, Dehui; Chen, Xiaoqi; Yu, Liang; Wu, Xing; Liu, Qingfei; Liu, Yun; Yang, Huaixin; Tian, Huanfang; Hu, Yongfeng; Du, Peipei; Si, Rui; Wang, Junhu; Cui, Xiaoju; Li, Haobo; Xiao, Jianping; Xu, Tao; Deng, Jiao; Yang, Fan; Duchesne, Paul N.; Zhang, Peng; Zhou, Jigang; Sun, Litao; Li, Jianqi; Pan, Xiulian; Bao, Xinhe
    A Single Iron Site Confined in A Graphene Matrix for the Catalytic Oxidation of Benzene at Room Temperature
    In: Science Advances, vol. 1, no. 11, 2015, ISSN: 2375-2548.

    Links | BibTeX 标签: 原位电镜           

    <Go to ISI>://WOS:000216604200001

    doi:10.1126/sciadv.1500462


    @article{RN85,
    title = {A Single Iron Site Confined in A Graphene Matrix for the Catalytic Oxidation of Benzene at Room Temperature},
    author = {Dehui Deng and Xiaoqi Chen and Liang Yu and Xing Wu and Qingfei Liu and Yun Liu and Huaixin Yang and Huanfang Tian and Yongfeng Hu and Peipei Du and Rui Si and Junhu Wang and Xiaoju Cui and Haobo Li and Jianping Xiao and Tao Xu and Jiao Deng and Fan Yang and Paul N. Duchesne and Peng Zhang and Jigang Zhou and Litao Sun and Jianqi Li and Xiulian Pan and Xinhe Bao},
    url = {<Go to ISI>://WOS:000216604200001},
    doi = {10.1126/sciadv.1500462},
    issn = {2375-2548},
    year  = {2015},
    date = {2015-01-01},
    urldate = {2015-01-01},
    journal = {Science Advances},
    volume = {1},
    number = {11},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }


    Conference

    Liu, S. B.; Wang, W.; Yuan, T. Y.; Zhang, Y. Y.; Zhong, N.; Qi, R. J.; Huang, R.; Zhang, J.; Wu, X.
    Reliability Investigation of Flexible Graphene-Based Actuator
    IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) , 2015.

    Links | BibTeX 标签: 可靠性石墨烯           


    @conference{RN70,
    title = {Reliability Investigation of Flexible Graphene-Based Actuator},
    author = {S. B. Liu and W. Wang and T. Y. Yuan and Y. Y. Zhang and N. Zhong and R. J. Qi and R. Huang and J. Zhang and X. Wu},
    doi = {10.1109/ipfa.2015.7224413},
    year  = {2015},
    date = {2015-01-01},
    urldate = {2015-01-01},
    booktitle = {IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) },
    journal = {2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)},
    pages = {411-14},
    keywords = {可靠性, 石墨烯},
    pubstate = {published},
    tppubtype = {conference}
    }


    Journal Article

    Liu, S. Y.; Yang, C.; Sun, W. F.; Qian, Q. S.; Huang, Y.; Wu, X.; Wu, M. J.; Yang, Q. L.; Sun, L. T.
    Repetitive-Avalanche-Induced Electrical Parameters Shift for 4H-SiC Junction Barrier Schottky Diode
    In: IEEE Transactions on Electron Devices, vol. 62, no. 2, pp. 601-605, 2015, ISSN: 0018-9383.

    Abstract | Links | BibTeX 标签: 可靠性           

    The electrical parameters shift of 4H-SiC junction barrier Schottky diode under the repetitive avalanche current stress has been experimentally investigated. Using technical computer-aided design simulation and high resolution transmission electron microscopy analysis at atomic scale, it has been demonstrated that the forward voltage drop of the device has no variation during the stress due to the intactness of active area. However, the reverse breakdown voltage is gradually increased with the stress time, which results from hot electron injection and trapping into the SiO2 dielectric at the outer edge of p-type junction termination.

    @article{RN17,
    title = {Repetitive-Avalanche-Induced Electrical Parameters Shift for 4H-SiC Junction Barrier Schottky Diode},
    author = {S. Y. Liu and C. Yang and W. F. Sun and Q. S. Qian and Y. Huang and X. Wu and M. J. Wu and Q. L. Yang and L. T. Sun},
    doi = {10.1109/ted.2014.2375821},
    issn = {0018-9383},
    year  = {2015},
    date = {2015-01-01},
    urldate = {2015-01-01},
    journal = {IEEE Transactions on Electron Devices},
    volume = {62},
    number = {2},
    pages = {601-605},
    abstract = {The electrical parameters shift of 4H-SiC junction barrier Schottky diode under the repetitive avalanche current stress has been experimentally investigated. Using technical computer-aided design simulation and high resolution transmission electron microscopy analysis at atomic scale, it has been demonstrated that the forward voltage drop of the device has no variation during the stress due to the intactness of active area. However, the reverse breakdown voltage is gradually increased with the stress time, which results from hot electron injection and trapping into the SiO2 dielectric at the outer edge of p-type junction termination.},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }

    Journal Article

    Tan, Y. Y.; Yang, Q. L.; Sim, K. S.; Sun, Li Tao; Wu, Xing
    Cu-Al Intermetallic Compound Investigation using Ex-Situ Post Annealing and In-Situ Annealing
    In: Microelectronics Reliability, vol. 55, no. 11, pp. 2316-2323, 2015, ISSN: 0026-2714.

    Links | BibTeX 标签: 原位电镜可靠性           


    @article{RN57,
    title = {Cu-Al Intermetallic Compound Investigation using Ex-Situ Post Annealing and In-Situ Annealing},
    author = {Y. Y. Tan and Q. L. Yang and K. S. Sim and Li Tao Sun and Xing Wu},
    doi = {10.1016/j.microrel.2015.06.050},
    issn = {0026-2714},
    year  = {2015},
    date = {2015-01-01},
    urldate = {2015-01-01},
    journal = {Microelectronics Reliability},
    volume = {55},
    number = {11},
    pages = {2316-2323},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Zeng, Wei; Zhang, Guanhua; Wu, Xing; Zhang, Kang; Zhang, Hang; Hou, Sucheng; Li, Chengchao; Wang, Taihong; Duan, Huigao
    Construction of Hierarchical CoS Nanowire@NiCo2S4 Nanosheet Arrays via One-Step ion Exchange for High-Performance Supercapacitors
    In: Journal of Materials Chemistry A, vol. 3, no. 47, pp. 24033-24040, 2015, ISSN: 2050-7488

    Links | BibTeX 标签: 传感器           


    @article{RN54,
    title = {Construction of Hierarchical CoS Nanowire@NiCo2S4 Nanosheet Arrays via One-Step ion Exchange for High-Performance Supercapacitors},
    author = {Wei Zeng and Guanhua Zhang and Xing Wu and Kang Zhang and Hang Zhang and Sucheng Hou and Chengchao Li and Taihong Wang and Huigao Duan},
    doi = {10.1039/c5ta05934h},
    issn = {2050-7488},
    year  = {2015},
    date = {2015-01-01},
    urldate = {2015-01-01},
    journal = {Journal of Materials Chemistry A},
    volume = {3},
    number = {47},
    pages = {24033-24040},
    keywords = {传感器},
    pubstate = {published},
    tppubtype = {article}
    }


  • 2014

    Journal Article

    Zou Y H, Han L, Yuan G L, Liu B L, Zhao X L, Tian B B, Wang J L, Sun S, Sun J L, Meng X J, Chu J H
    Enhanced ferroelectric and dielectric properties of the P(VDF-TrFE)/Ag nanoparticles composite thin films
    Journal of Materials Science-Materials in Electronics, 2014, 25: 3461-3465.

    | 标签: 传感器

    Journal Article

    Zhu X J, Ma J H, Yao N J, Liang Y, Jiang J C, Wang S L, Chu J H
    Preparation of CuInSe2 thin films by a chemical solution method
    Journal of Infrared and Millimeter Waves, 2014, 33: 231-236.

    | 标签: 传感器

    Journal Article

    Zhu L P, Deng H M, Sun L, Yang J, Yang P X, Chu J H
    Optical properties of multiferroic LuFeO3 ceramics
    Ceramics International, 2014, 40: 1171-1175.

    | 标签: 传感器

    Journal Article

    Zhu L P, Deng H M, Liu J, Sun L, Yang P X, Jiang A Q, Chu J H
    Preparation and characterization of Bi-doped LuFeO3 thin films grown on LaNiO3 substrate
    Journal of Crystal Growth, 2014, 387: 6-9.

    | 标签: 传感器

    Journal Article

    Zhu J J, Zhang J Z, Xu G S, Zhang X L, Hu Z G, Chu J H
    Electronic transitions and dielectric functions of relaxor ferroelectric Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystals: Temperature dependent spectroscopic study
    Applied Physics Letters, 2014, 104: 132903.

    | 标签: 传感器

    Journal Article

    Zhou W L, Deng H M, Yang P X, Chu J H
    Structural phase transition, narrow band gap, and room-temperature ferromagnetism in [KNbO3](1-x)[BaNi1/2Nb1/2O3-delta](x) ferroelectrics
    Applied Physics Letters, 2014, 105: 111904.

    | 标签: 传感器

    Journal Article

    Zhao X L, Wang J L, Tian B B, Liu B L, Zou Y H, Wang X D, Sun S, Sun J L, Meng X J, Chu J H
    Temperature dependence of electronic transport property in ferroelectric polymer films
    Applied Surface Science, 2014, 316: 497-500.

    | 标签: 传感器

    Journal Article

    Zhao X L, Wang J L, Tian B B, Liu B L, Wang X D, Sun S, Zou Y H, Lin T, Sun J L, Meng X J, Chu J H
    Enhanced piezoelectric response in the artificial ferroelectric polymer multilayers
    Applied Physics Letters, 2014, 105: 222907.

    | 标签: 传感器

    Journal Article

    Zhao X L, Wang J L, Liu B L, Tian B B, Zou Y H, Sun S, Sun J L, Meng X J, Chu J H
    Enhanced dielectric and ferroelectric properties in the artificial polymer multilayers
    Applied Physics Letters, 2014, 104: 082903.

    | 标签: 传感器

    Journal Article

    Zhao X L, Tian B B, Liu B L, Wang J L, Han L, Sun J L, Meng X J, Chu J H
    Self-polarization in ultrathin Langmuir-Blodgett polymer films
    Thin Solid Films, 2014, 551: 171-173.

    | 标签: 传感器

    Journal Article

    Zhang Y G, Tang Z, Zhao X G, Cheng G D, Tu Y, Cong W T, Peng W, Zhu Z Q, Chu J H
    A neutral oxygen-vacancy center in diamond: A plausible qubit candidate and its spintronic and electronic properties
    Applied Physics Letters, 2014, 105: 052107.

    | 标签: 传感器

    Journal Article

    Zhang X L, Zhu J J, Zhang J Z, Xu G S, Hu Z G, Chu J H
    Photoluminescence study on polar nanoregions and structural variations in Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystals
    Optics Express, 2014, 22: 21903-21911.

    | 标签: 传感器

    Journal Article

    Zhang S, Zhang J Z, Han M J, Li Y W, Hu Z G, Chu J H
    Temperature dependent near infrared ultraviolet range dielectric functions of nanocrystalline (Na0.5Bi0.5)(1-x)Ce-x(Ti0.99Fe0.01)O-3 films
    Applied Physics Letters, 2014, 104: 041106.

    | 标签: 传感器

    Journal Article

    Zhang L B, Hou Y, Zhou W, Huang Z M, Chu J H
    Development of bolometer detector array made of Mn-Co-Ni-O thin films
    Journal of Infrared and Millimeter Waves, 2014, 33: 359-363.

    | 标签: 传感器

    Journal Article

    Zhang K Z, Tao J H, Liu J F, He J, Dong Y C, Sun L, Yang P X, Chu J H
    Compact Cu2ZnSn(S,Se)(4) Thin Films Fabricated by a Simple Sol-Gel Technique
    Journal of Inorganic Materials, 2014, 29: 781-784.

    | 标签: 传感器

    Journal Article

    Zhang K Z, Tao J H, He J, Wang W J, Sun L, Yang P X, Chu J H
    Composition control in Cu2ZnSnS4 thin films by a sol-gel technique without sulfurization
    Journal of Materials Science-Materials in Electronics, 2014, 25: 2703-2709.

    | 标签: 传感器

    Journal Article

    Zhang J Z, Ding H C, Zhu J J, Li Y W, Hu Z G, Duan C G, Meng X J, Chu J H
    Electronic structure and optical responses of nanocrystalline BiGaO3 films: A combination study of experiment and theory
    Journal of Applied Physics, 2014, 115: 083110.

    | 标签: 传感器

    Journal Article

    Zhai X Z, Jia H M, Zhang Y E, Lei Y, Wei J, Gao Y H, Chu J H, He W W, Yin J J, Zheng Z
    In situ fabrication of Cu2ZnSnS4 nanoflake thin films on both rigid and flexible substrates
    Crystengcomm, 2014, 16: 6244-6249.

    | 标签: 传感器

    Journal Article

    Xu Y G, Lv M, Wang R, Zhou Y M, Lin T, Chang Z G, Yu G L, Dai N, Chu J H
    Spin susceptibility of two-dimensional electron system in HgTe surface quantum well
    Applied Physics Letters, 2014, 105: 062404.

    | 标签: 传感器

    Journal Article

    Xu W F, Yang J, Shen Y D, Bai W, Zhang Y Y, Liu J, Tang K, Wang Z, Duan C G, Tang X D, Chu J H
    Magnetocaloric effect in multiferroic Y-type hexaferrite Ba0.5Sr1.5Zn2(Fe0.92Al0.08)(12)O-22
    Aip Advances, 2014, 4: 067122.

    | 标签: 传感器

    Journal Article

    Xu L P, Zhang L L, Zhang X L, Zhang J Z, Hu Z G, Yu J, Chu J H
    Phase transformations in multiferroic Bi1-xLaxFe1-yTiyO3 ceramics probed by temperature dependent Raman scattering
    Journal of Applied Physics, 2014, 116: 164103.

    | 标签: 传感器

    Journal Article

    Xu J, Lu A, Wang C, Zou R, Liu X, Wu X, Wang Y, Li S, Sun L, Chen X, Oh H, Baek H, Yi G-C, Chu J H
    ZnSe-Based Longitudinal Twinning Nanowires
    Advanced Engineering Materials, 2014, 16: 459-465.

    | 标签: 传感器

    Journal Article

    Xiong Z, Zhang Y, Fu S, Zhang Z, Xu G, Feng Z, Chu J H, Verlinden P J
    Crystal growth, microstructure characterization and cell performance analysis of casting-monocrystalline ingots with<111>orientation
    proceedings of the 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), F 8-13 June 2014.

    | 标签: 传感器

    Journal Article

    Wu J, Huang Z M, Zhou W, Ouyang C, Hou Y, Gao Y Q, Chen R, Chu J H
    Investigation of cation distribution, electrical, magnetic properties and their correlation in Mn2-xCo2xNi1-xO4 films
    Journal of Applied Physics, 2014, 115: 113703.

    | 标签: 传感器

    Journal Article

    Wu G, Deng H M, Wang W J, Zhang K Z, Cao H Y, Yang P X, Chu J H
    Effect of Co doping on the structure, optical and magnetic properties of LaAlO3 thin films
    Journal of Materials Science-Materials in Electronics, 2014, 25: 3137-3140.

    | 标签: 传感器

    Journal Article

    Wang W J, He J, Zhang K Z, Tao J H, Sun L, Chen Y, Yang P X, Chu J H
    Structure and Optical Properties of CuInSe2 and Cu0.9In0.9Zn0.2Se2 Thin Films Deposited by One-step Radio-frequency Magnetron Sputtering
    Journal of Inorganic Materials, 2014, 29: 1223-1227.

    | 标签: 传感器

    Journal Article

    Wang J L, Liu B L, Zhao X L, Tian B B, Zou Y H, Sun S, Shen H, Sun J L, Meng X J, Chu J H
    Transition of the polarization switching from extrinsic to intrinsic in the ultrathin polyvinylidene fluoride homopolymer films
    Applied Physics Letters, 2014, 104: 182907

    | 标签: 传感器

    Journal Article

    Tong J, Huang J, Huang Z, Chu J H
    Room temperature InGaAs hot electron detector for THz/subTHz regions
    proceedings of the Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013, SuZhou, China, F Oct 20-29, 2013, 2014 [C]. 2014.

    | 标签: 传感器

    Journal Article

    Tao J H, Liu J F, He J, Zhang K Z, Jiang J C, Sun L, Yang P X, Chu J H
    Synthesis and characterization of Cu2ZnSnS4 thin films by the sulfurization of co-electrodeposited Cu-Zn-Sn-S precursor layers for solar cell applications
    Rsc Advances, 2014, 4: 23977-23984.

    | 标签: 传感器

    Journal Article

    Tao J H, He J, Zhang K Z, Liu J F, Dong Y C, Sun L, Yang P X, Chu J H
    Effect of deposition potential on the properties of Cu2ZnSnS4 films for solar cell applications
    Materials Letters, 2014, 135: 8-10.

    | 标签: 传感器

    Journal Article

    Tao B R, Miao F J, Zhang J, Chu J H
    The effect of neodymium ion doping on the photocatalytic properties of nano-titanium dioxide
    Journal of Infrared and Millimeter Waves, 2014, 33: 355-358.

    | 标签: 传感器

    Journal Article

    Shuo S, Peng Z, Jianfeng L, Yuanke L, Jianlu W, Shujiang Z, Yangjun X, Xiangjian M, Duowang F, Chu J H
    Synthetically controlling the optoelectronic properties of dithieno [2,3-d:2',3'-d'-d'] benzo [1,2b:4,5-b'] dithiophene-alt-diketopyrro lopyrroleconjugated polymers for efficient solar cells
    Journal of Materials Chemistry A, 2014, 2: 15316-15325.

    | 标签: 传感器

    Journal Article

    Shan C, Huang T, Zhang J Z, Han M J, Li Y W, Hu Z G, Chu J H
    Optical and Electrical Properties of Sol Gel Derived Ba1-xLax SnO3 Transparent Conducting Films for Potential Optoelectronic Applications
    Journal of Physical Chemistry C, 2014, 118: 6994-7001.

    | 标签: 传感器

    Journal Article

    Shan C, Chang P, Shi K, Li Y W, Hu Z G, Chu J H
    Optical phonon behaviors and unstable polar mode in transparent conducting Ba1-xLaxSnO3 films from temperature dependent far-infrared reflectance spectra
    Rsc Advances, 2014, 4: 34987-34991.

    | 标签: 传感器

    Journal Article

    Qiao Q, Lu H Y, Ge J, Xi X, Chen R L, Yang J, Zhu J B, Shi Z R, Chu J H
    18.5% efficient AlOx/SiNy rear passivated industrial multicrystalline silicon solar cells
    Applied Surface Science, 2014, 305: 439-444.

    | 标签: 传感器

    Journal Article

    Peng C, Rao F, Wu L C, Song Z T, Gu Y F, Zhou D, Song H J, Yang P X, Chu J H
    Homogeneous phase W-Ge-Te material with improved overall phase-change properties for future nonvolatile memory
    Acta Materialia, 2014, 74: 49-57.

    | 标签: 传感器

    Journal Article

    Miao F J, Tao B R, Hu Z G, Chu J H
    Preparation and performance of micro/nano-scale Bi3.15Nd0.85Ti3O12/Si-MCP ferroelectric thin film arrays
    Journal of Infrared and Millimeter Waves, 2014, 33: 139.

    | 标签: 传感器

    Journal Article

    Meng X K, Deng H M, He J, Zhu L P, Sun L, Yang P X, Chu J H
    Synthesis of Cu2FeSnSe4 thin film by selenization of RF magnetron sputtered precursor
    Materials Letters, 2014, 117: 1-3.

    | 标签: 传感器

    Journal Article

    Meng L, LinGuolin Y, Yonggang X, Tie L, Ning D, Chu J H
    Magnetotransport Investigations of Two-Dimensional Electron Gas for AlGaN/GaN Heterostructure
    Advanced Materials Research, 2014, 1058: 132-135.

    | 标签: 传感器

    Journal Article

    Ma Z X, Liao X B, Kong G L, Chu J H
    Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix (Retraction of vol 42, pg 367, 2000)
    Materials Letters, 2014, 120: 299-299.

    | 标签: 传感器

    Journal Article

    Luo C H, Shen Z T, Meng X J, Han L, Sun S, Lin T, Sun J L, Peng H, Chu J H
    Pyromellitic Diimide-Benzodithiophene Copolymer for Polymer Solar Cells: Effect of Side Chain Length and Thiophene pi-Bridge on Optical and Electronic Properties
    Molecular Crystals and Liquid Crystals, 2014, 604: 151-163.

    | 标签: 传感器

    Journal Article

    Luo C H, Shen Z T, Meng X J, Han L, Sun S, Lin T, Sun J L, Peng H, Chu J H
    Design and synthesis of pyromellitic diimide-based donor-acceptor conjugated polymers for photovoltaic application
    Polymers for Advanced Technologies, 2014, 25: 809-815.

    | 标签: 传感器

    Journal Article

    Luo C H, Meng X J, Han L, Sun S, Lin T, Sun J L, Peng H, Chu J H
    n-Type pyromellitic diimide-benzodithiophene-containing conjugated polymers for all-polymer solar cells with high open-circuit voltage
    Synthetic Metals, 2014, 196: 110-116.

    | 标签: 传感器

    Journal Article

    Luo C H, Bi W X, Deng S M, Zhang J, Chen S Y, Li B, Liu Q C, Peng H, Chu J H
    Indolo[3,2,1-jk]carbazole Derivatives-Sensitized Solar Cells: Effect of pi-Bridges on the Performance of Cells
    Journal of Physical Chemistry C, 2014, 118: 14211-14217.

    | 标签: 传感器

    Journal Article

    Liu X Z, Xu Y G, Yu G L, Lin T, Guo S L, Chu J H, Zhang Y G
    The zero field spin splitting and Zeeman splitting in the In0.53Ga0.47As/In0.52Al0.48As quantum well
    Journal of Infrared and Millimeter Waves, 2014, 33: 134-138.

    | 标签: 传感器

    Journal Article

    Liu J, Deng H M, Zhu L P, Zhang K Z, Meng X K, Cao H Y, Yang P X, Chu J H
    Structure, optical and magnetic properties of Bi1-xEuxFeO3 films fabricated by pulsed laser deposition
    Applied Surface Science, 2014, 316: 78-81.

    | 标签: 传感器

    Journal Article

    Liu J, Deng H M, Zhai X Z, Lin T, Meng X J, Zhang Y Y, Zhou W L, Yang P X, Chu J H
    Influence of Zn doping on structural, optical and magnetic properties of BiFeO3 films fabricated by the sol-gel technique
    Materials Letters, 2014, 133: 49-52.

    | 标签: 传感器

    Journal Article

    Liu J, Deng H M, Cao H Y, Zhai X Z, Tao J H, Sun L, Yang P X, Chu J H
    Influence of rare-earth elements doping on structure and optical properties of BiFe03 thin films fabricated by pulsed laser deposition
    Applied Surface Science, 2014, 307: 543-547.

    | 标签: 传感器

    Journal Article

    Liu B L, Tian B B, Geiger S, Hu Z G, Zhao X L, Zou Y H, Wang J L, Sun J L, Sun S, Dkhil B, Meng X J, Chu J H
    The intermediate temperature T* revealed in relaxor polymers
    Applied Physics Letters, 2014, 104: 222907

    | 标签: 传感器

    Journal Article

    Li X X, Deng H M, Zhang J Z, Yang P X, Chu J H
    Bismuth composition dependence of properties of Bi-x FeO3 thin films
    Journal of Infrared and Millimeter Waves, 2014, 33: 19.

    | 标签: 传感器

    Journal Article

    Li X R, Han M J, Zhang X L, Shan C, Hu Z G, Zhu Z Q, Chu J H
    Temperature-dependent band gap, interband transitions, and exciton formation in transparent p-type delafossite CuCr1-xMgxO2 films
    Physical Review B, 2014, 90: 035308.

    | 标签: 传感器

    Journal Article

    Li X R, Han M J, Wu J D, Shan C, Hu Z G, Zhu Z Q, Chu J H
    Low voltage tunneling magnetoresistance in CuCrO2-based semiconductor heterojunctions at room temperature
    Journal of Applied Physics, 2014, 116: 223701.

    | 标签: 传感器

    Journal Article

    Li X R, Han M J, Chang P, Hu Z G, Li Y W, Zhu Z Q, Chu J H
    Temperature dependence of terahertz optical characteristics and carrier transport dynamics in p-type transparent conductive CuCr1-xMgxO2 semiconductor films
    Applied Physics Letters, 2014, 104: 012103.

    | 标签: 传感器

    Journal Article

    Kong H, He J, Meng X K, Zhu L P, Tao J H, Sun L, Yang P X, Chu J H
    Influence of Se supply for selenization of Cu(In,Ga)Se-2 precursors deposited by sputtering from a single quaternary target
    Materials Letters, 2014, 118: 21-23.

    | 标签: 传感器

    Journal Article

    Kong H, He J, Huang L, Zhu L P, Sun L, Yang P X, Chu J H
    Effect of working pressure on growth of Cu(In,Ga)Se-2 thin film deposited by sputtering from a single quaternary target
    Materials Letters, 2014, 116: 75-78.

    | 标签: 传感器

    Journal Article

    Jing C B, Guo H, Hu Z G, Yang P X, Chu J H, Liu A Y, Shi Y W
    Metallic attenuated total reflection infrared hollow fibers for robust optical transmission systems
    Applied Physics Letters, 2014, 105: 011102.

    | 标签: 传感器

    Conference

    Jing C, Bai W, Hu Z, Yang P, Liu A, Lin F, Shi Y, Chu J H
    Low-temperature, low-cost growth of robust ATR GeO2 hollow fibers based on copper capillary tubes for transmission of CO2 laser light
    proceedings of the Optical Fibers and Sensors for Medical Diagnostics and Treatment Applications Xiv, San Francisco, CA, F Feb 01-02, 2014, 2014 Spie.

    | 标签: 传感器

    Journal Article

    Jiang P P, Zhang X L, Chang P, Hu Z G, Bai W, Li Y W, Chu J H
    Spin-phonon interactions of multiferroic Bi4Ti3O12-BiFeO3 ceramics: Low-temperature Raman scattering and infrared reflectance spectra investigations
    Journal of Applied Physics, 2014, 115: 144101.

    | 标签: 传感器

    Journal Article

    Jiang P P, Duan Z H, Xu L P, Zhang X L, Li Y W, Hu Z G, Chu J H
    Phase transformation in multiferroic Bi5Ti3FeO15 ceramics by temperature-dependent ellipsometric and Raman spectra: An interband electronic transition evidence
    Journal of Applied Physics, 2014, 115: 083101.

    | 标签: 传感器

    Journal Article

    Huang Z-P, Zhao S-R, Sun L, Sun P-C, Zhang C-J, Wu Y-H, Cao H, Wang S-L, Hu Z-G, Yang P-X, Chu J H
    Voltage dependent quantum efficiency measurement in property study of thin film solar cells
    Journal of Infrared and Millimeter Waves, 2014, 33: 395-399.

    | 标签: 传感器

    Journal Article

    Huang Z, Tong J, Huang J, Zhou W, Wu J, Gao Y, Lu J, Lin T, Wei Y, Chu J H
    Room-temperature photoconductivity far below the semiconductor bandgap
    Adv Mater, 2014, 26: 6594-6598.

    | 标签: 传感器

    Conference

    Huang Z, OuYang C, Zhou W, Tong J, Huang J, Wu J, Gao Y, Chu J H
    Progress on Mn-Co-Ni-O infrared thin films and detectors
    proceedings of the 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), F 14-19 Sept. 2014, 2014.

    | 标签: 传感器

    Journal Article

    Huang T, Hu Z G, Xu G S, Zhang X L, Zhang J Z, Chu J H
    Inherent optical behavior and structural variation in Na0.5Bi0.5TiO3-6% BaTiO3 revealed by temperature dependent Raman scattering and ultraviolet-visible transmittance
    Applied Physics Letters, 2014, 104: 111908.

    | 标签: 传感器

    Journal Article

    Huang R, Ding H C, Liang W I, Gao Y C, Tang X D, He Q, Duan C G, Zhu Z Q, Chu J H, Fisher C A J, Hirayama T, Ikuhara Y, Chu Y H
    Atomic-Scale Visualization of Polarization Pinning and Relaxation at Coherent BiFeO3/LaAlO3 Interfaces
    Advanced Functional Materials, 2014, 24: 793-799.

    | 标签: 传感器

    Conference

    Huang J, Tong J, Huang Z, Chu J H
    Coherent CdTe Terahertz Source for High-Resolutional Imaging
    proceedings of the Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013, SuZhou, China, F Oct 20-29, 2013, 2014.

    | 标签: 传感器

    Journal Article

    Hong X K, Liu Y S, Zhang D B, Feng J F, Chu J H
    Microstructures and electrical properties of Ba0.9Sr0.1Ti0.99Mn0.01O3 multilayers
    Journal of Alloys and Compounds, 2014, 613: 244-248.

    | 标签: 传感器

    Journal Article

    He X, Xu T, Xu X, Zeng Y, Xu J, Sun L, Wang C, Xing H, Wu B, Lu A, Liu D, Chen X, Chu J H
    In situ atom scale visualization of domain wall dynamics in VO2 insulator-metal phase transition
    Sci Rep, 2014, 4: 6544.

    | 标签: 传感器

    Journal Article

    He J, Tao J H, Meng X K, Dong Y C, Zhang K Z, Sun L, Yang P X, Chu J H
    Effect of selenization time on the growth of Cu2ZnSnSe4 thin films obtained from rapid thermal processing of stacked metallic layers
    Materials Letters, 2014, 126: 1-4.

    | 标签: 传感器

    Journal Article

    He J, Sun L, Chen Y, Jiang J C, Yang P X, Chu J H
    Cu2ZnSnS4 thin film solar cell utilizing rapid thermal process of precursors sputtered from a quaternary target: a promising application in industrial processes
    Rsc Advances, 2014, 4: 43080-43086.

    | 标签: 传感器

    Journal Article

    Guo S, Hu Z G, Ji X L, Huang T, Zhang X L, Wu L C, Song Z T, Chu J H
    Temperature and concentration dependent crystallization behavior of Ge2Sb2Te5 phase change films: tungsten doping effects
    Rsc Advances, 2014, 4: 57218-57222.

    | 标签: 传感器

    Journal Article

    Ge J, Jiang J C, Yang P X, Peng C, Huang Z P, Zuo S H, Yang L H, Chu J H
    A 5.5% efficient co-electrodeposited ZnO/CdS/Cu2ZnSnS4/Mo thin film solar cell
    Solar Energy Materials and Solar Cells, 2014, 125: 20-26.

    | 标签: 传感器

    Conference

    Ge J, Jiang J, Yang P, Chu J H, Yan Y
    Co-electroplated CU2ZnSnS4 Thin-film Solar Cells: the Role of Precursor Metallic Composition
    2014 IEEE proceedings of the 40th IEEE Photovoltaic Specialists Conference (PVSC) Denver, CO, USA Jun 08-13, 2014.

    | 标签: 传感器

    Journal Article

    Ge J, Chu J H, Jiang J, Yan Y, Yang P
    Characteristics of in-substituted CZTS thin film and bifacial solar cell
    ACS Appl Mater Interfaces, 2014, 6: 21118-21130.

    | 标签: 传感器

    Journal Article

    Gao Y Q, Huang Z M, Hou Y, Wu J, Zhou W, Zhang L B, Chu J H
    Infrared optical properties of Mn1.56Co0.96Ni0.48O4 thin films prepared by chemical solution deposition
    Applied Physics a-Materials Science & Processing, 2014, 114: 829-832.

    | 标签: 传感器

    Journal Article

    Gao Y Q, Huang Z M, Hou Y, Wu J, Zhou W, OuYang C, Huang J G, Tong J C, Chu J H
    Structural and electrical properties of Mn1.56Co0.96Ni0.48O4 NTC thermistor films
    Materials Science and Engineering B-Advanced Functional Solid-State Materials, 2014, 185: 74-78.

    | 标签: 传感器

    Journal Article

    Gao Y H, Yang J, Shen H, Sun J L, Meng X J, Chu J H
    Evolution of multiple dielectric responses and relaxor-like behaviors in pure and nitrogen-ion-implanted (Ba, Sr)TiO3 thin films
    Applied Physics Letters, 2014, 104: 122902.

    | 标签: 传感器

    Journal Article

    Duan Z H, Jiang K, Xu L P, Li Y W, Hu Z G, Chu J H
    Intrinsic relationship between electronic structures and phase transition of SrBi2-xNdxNb2O9 ceramics from ultraviolet ellipsometry at elevated temperatures
    Journal of Applied Physics, 2014, 115: 054107.

    | 标签: 传感器

    Journal Article

    Duan Z H, Chang P, Hu Z G, Wang J X, Wang G S, Dong X L, Chu J H
    Temperature dependent Raman scattering and far-infrared reflectance spectra of MgO modified Pb-0.99(Zr0.95Ti0.05)(0.98)Nb0.02O3 ceramics: A composition effect
    Journal of Applied Physics, 2014, 116: 093513.

    | 标签: 传感器

    Journal Article

    Duan Z, Jiang K, Wu J, Sun J, Hu Z, Chu J H
    Thickness-dependent optical properties in compressively strained BiFeO3/LaAlO3 films grown by pulsed laser deposition
    Materials Research Bulletin, 2014, 51: 351-355.

    | 标签: 传感器

    Journal Article

    Ding X J, Xu L P, Hu Z G, Chen X F, Wang G S, Dong X L, Chu J H
    Phase diagram and incommensurate antiferroelectric structure in (Pb1-1.5xLax)(Zr0.42Sn0.40Ti0.18)O-3 ceramics discovered by band-to-band optical transitions
    Applied Physics Letters, 2014, 105: 131909.

    | 标签: 传感器

    Journal Article

    Chu J H, Meng X
    A Ferroelectric Polymer of Polyvinylidene Fluoride for the Application of Infrared Detection
    Infrared Technology, 2014, 36: 1-9.

    | 标签: 传感器

    Journal Article

    Cao H, Zhang C J, Chu J H
    The effect of working gas pressure and deposition power on the properties of molybdenum films deposited by DC magnetron sputtering
    Science China-Technological Sciences, 2014, 57: 947-952.

    | 标签: 传感器

    Journal Article

    Bai W, Yin W H, Yang J, Tang K, Zhang Y Y, Lin T, Meng X J, Duan C G, Tang X D, Chu J H
    Cryogenic temperature relaxor-like dielectric responses and magnetodielectric coupling in Aurivillius Bi5Ti3FeO15 multiferroic thin films
    Journal of Applied Physics, 2014, 116: 084103.

    | 标签: 传感器

    Journal Article

    Bi, H. C.; Huang, X.; Wu, X.; Cao, X. H.; Tan, C. L.; Yin, Z. Y.; Lu, X. H.; Sun, L. T.; Zhang, H.
    Carbon Microbelt Aerogel Prepared by Waste Paper: An Efficient and Recyclable Sorbent for Oils and Organic Solvents
    In: Small, vol. 10, no. 17, pp. 3544-3550, 2014, ISSN: 1613-6810.

    Links | BibTeX 标签: 原位电镜石墨烯           


    @article{RN14,
    title = {Carbon Microbelt Aerogel Prepared by Waste Paper: An Efficient and Recyclable Sorbent for Oils and Organic Solvents},
    author = {H. C. Bi and X. Huang and X. Wu and X. H. Cao and C. L. Tan and Z. Y. Yin and X. H. Lu and L. T. Sun and H. Zhang},
    doi = {10.1002/smll.201303413},
    issn = {1613-6810},
    year  = {2014},
    date = {2014-01-01},
    urldate = {2014-01-01},
    journal = {Small},
    volume = {10},
    number = {17},
    pages = {3544-3550},
    keywords = {原位电镜, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Chen, Yuming; Meng, Lijuan; Zhao, Weiwei; Liang, Zheng; Wu, Xing; Nan, Haiyan; Wu, Zhangting; Huang, Shan; Sun, Litao; Wang, Jinlan; Ni, Zhenhua
    Raman Mapping Investigation of Chemical Vapor Deposition-Fabricated Twisted Bilayer Graphene with Irregular Grains
    In: Physical Chemistry Chemical Physics, vol. 16, no. 39, pp. 21682-21687, 2014, ISSN: 1463-9076.

    Links | BibTeX 标签: 石墨烯           


    @article{RN58,
    title = {Raman Mapping Investigation of Chemical Vapor Deposition-Fabricated Twisted Bilayer Graphene with Irregular Grains},
    author = {Yuming Chen and Lijuan Meng and Weiwei Zhao and Zheng Liang and Xing Wu and Haiyan Nan and Zhangting Wu and Shan Huang and Litao Sun and Jinlan Wang and Zhenhua Ni},
    doi = {10.1039/c4cp03386h},
    issn = {1463-9076},
    year  = {2014},
    date = {2014-01-01},
    urldate = {2014-01-01},
    journal = {Physical Chemistry Chemical Physics},
    volume = {16},
    number = {39},
    pages = {21682-21687},
    keywords = {石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Cong, C. X.; Shang, J. Z.; Wu, X.; Cao, B. C.; Peimyoo, N.; Qiu, C.; Sun, L. T.; Yu, T.
    Synthesis and Optical Properties of Large-Area Single-Crystalline 2D Semiconductor WS2 Monolayer from Chemical Vapor Deposition
    In: Physical Chemistry Chemical Physics, vol. 16, no. 39, pp. 21682-21687, 2014, ISSN: 1463-9076.

    Links | BibTeX 标签:           


    @article{RN24,
    title = {Synthesis and Optical Properties of Large-Area Single-Crystalline 2D Semiconductor WS2 Monolayer from Chemical Vapor Deposition},
    author = {C. X. Cong and J. Z. Shang and X. Wu and B. C. Cao and N. Peimyoo and C. Qiu and L. T. Sun and T. Yu},
    doi = {10.1002/adom.201300428},
    issn = {2195-1071},
    year  = {2014},
    date = {2014-01-01},
    urldate = {2014-01-01},
    journal = {Advanced Optical Materials},
    volume = {2},
    number = {2},
    pages = {131-136},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Guo, X. G.; Fang, G. Z.; Li, G.; Ma, H.; Fan, H. J.; Yu, L.; Ma, C.; Wu, X.; Deng, D. H.; Wei, M. M.; Tan, D. L.; Si, R.; Zhang, S.; Li, J. Q.; Sun, L. T.; Tang, Z. C.; Pan, X. L.; Bao, X. H.
    Direct, Nonoxidative Conversion of Methane to Ethylene, Aromatics, and Hydrogen
    In: Science, vol. 344, no. 6184, pp. 616-619, 2014, ISSN: 0036-8075.

    Abstract | Links | BibTeX 标签: 原位电镜           

    The efficient use of natural gas will require catalysts that can activate the first C-H bond of methane while suppressing complete dehydrogenation and avoiding overoxidation. We report that single iron sites embedded in a silica matrix enable direct, nonoxidative conversion of methane, exclusively to ethylene and aromatics. The reaction is initiated by catalytic generation of methyl radicals, followed by a series of gas-phase reactions. The absence of adjacent iron sites prevents catalytic C-C coupling, further oligomerization, and hence, coke deposition. At 1363 kelvin, methane conversion reached a maximum at 48.1% and ethylene selectivity peaked at 48.4%, whereas the total hydrocarbon selectivity exceeded 99%, representing an atom-economical transformation process of methane. The lattice-confined single iron sites delivered stable performance, with no deactivation observed during a 60-hour test.


    @article{RN12,
    title = {Direct, Nonoxidative Conversion of Methane to Ethylene, Aromatics, and Hydrogen},
    author = {X. G. Guo and G. Z. Fang and G. Li and H. Ma and H. J. Fan and L. Yu and C. Ma and X. Wu and D. H. Deng and M. M. Wei and D. L. Tan and R. Si and S. Zhang and J. Q. Li and L. T. Sun and Z. C. Tang and X. L. Pan and X. H. Bao},
    doi = {10.1126/science.1253150},
    issn = {0036-8075},
    year  = {2014},
    date = {2014-01-01},
    urldate = {2014-01-01},
    journal = {Science},
    volume = {344},
    number = {6184},
    pages = {616-619},
    abstract = {The efficient use of natural gas will require catalysts that can activate the first C-H bond of methane while suppressing complete dehydrogenation and avoiding overoxidation. We report that single iron sites embedded in a silica matrix enable direct, nonoxidative conversion of methane, exclusively to ethylene and aromatics. The reaction is initiated by catalytic generation of methyl radicals, followed by a series of gas-phase reactions. The absence of adjacent iron sites prevents catalytic C-C coupling, further oligomerization, and hence, coke deposition. At 1363 kelvin, methane conversion reached a maximum at 48.1% and ethylene selectivity peaked at 48.4%, whereas the total hydrocarbon selectivity exceeded 99%, representing an atom-economical transformation process of methane. The lattice-confined single iron sites delivered stable performance, with no deactivation observed during a 60-hour test.},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Li, M.; Wu, X.; Li, L.; Wang, Y. X.; Li, D. B.; Pan, J.; Li, S. J.; Sun, L. T.; Li, G. H.
    Defect-Mediated Phase Transition Temperature of VO2 (M) Nanoparticles with Excellent Thermochromic Performance and Low Threshold Voltage
    In: Journal of Materials Chemistry A, vol. 2, no. 13, pp. 4520-4523, 2014, ISSN: 2050-7488.

    Abstract | Links | BibTeX 标签: 原位电镜           

    This paper reports the phase transition temperature regulation of VO2 (M) nanoparticles using interfacial defects and size effect other than the traditional doping routine. The nanoparticles exhibit excellent thermochromic performance and a low threshold voltage.

    <Go to ISI>://WOS:000332460800005

    doi:10.1039/c3ta14822j


    @article{RN2,
    title = {Defect-Mediated Phase Transition Temperature of VO2 (M) Nanoparticles with Excellent Thermochromic Performance and Low Threshold Voltage},
    author = {M. Li and X. Wu and L. Li and Y. X. Wang and D. B. Li and J. Pan and S. J. Li and L. T. Sun and G. H. Li},
    url = {<Go to ISI>://WOS:000332460800005},
    doi = {10.1039/c3ta14822j},
    issn = {2050-7488},
    year  = {2014},
    date = {2014-01-01},
    urldate = {2014-01-01},
    journal = {Journal of Materials Chemistry A},
    volume = {2},
    number = {13},
    pages = {4520-4523},
    abstract = {This paper reports the phase transition temperature regulation of VO2 (M) nanoparticles using interfacial defects and size effect other than the traditional doping routine. The nanoparticles exhibit excellent thermochromic performance and a low threshold voltage.},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Li, X. Y.; Pan, X. L.; Yu, L.; Ren, P. J.; Wu, X.; Sun, L. T.; Jiao, F.; Bao, X. H.
    Silicon Carbide-Derived Carbon Nanocomposite as A Substitute for Mercury in the Catalytic Hydrochlorination of Acetylene
    In: Nature Communications, vol. 5, pp. 7, 2014, ISSN: 2041-1723.

    Abstract | Links | BibTeX 标签: 原位电镜           

    Acetylene hydrochlorination is an important coal-based technology for the industrial production of vinyl chloride, however it is plagued by the toxicity of the mercury chloride catalyst. Therefore extensive efforts have been made to explore alternative catalysts with various metals. Here we report that a nanocomposite of nitrogen- doped carbon derived from silicon carbide activates acetylene directly for hydrochlorination in the absence of additional metal species. The catalyst delivers stable performance during a 150 hour test with acetylene conversion reaching 80% and vinyl chloride selectivity over 98% at 200 degrees C. Experimental studies and theoretical simulations reveal that the carbon atoms bonded with pyrrolic nitrogen atoms are the active sites. This proof- of- concept study demonstrates that such a nanocomposite is a potential substitute for mercury while further work is still necessary to bring this to the industrial stage. Furthermore, the finding also provides guidance for design of carbon- based catalysts for activation of other alkynes.


    @article{RN15,
    title = {Silicon Carbide-Derived Carbon Nanocomposite as A Substitute for Mercury in the Catalytic Hydrochlorination of Acetylene},
    author = {X. Y. Li and X. L. Pan and L. Yu and P. J. Ren and X. Wu and L. T. Sun and F. Jiao and X. H. Bao},
    doi = {10.1038/ncomms4688},
    issn = {2041-1723},
    year  = {2014},
    date = {2014-01-01},
    urldate = {2014-01-01},
    journal = {Nature Communications},
    volume = {5},
    pages = {7},
    abstract = {Acetylene hydrochlorination is an important coal-based technology for the industrial production of vinyl chloride, however it is plagued by the toxicity of the mercury chloride catalyst. Therefore extensive efforts have been made to explore alternative catalysts with various metals. Here we report that a nanocomposite of nitrogen- doped carbon derived from silicon carbide activates acetylene directly for hydrochlorination in the absence of additional metal species. The catalyst delivers stable performance during a 150 hour test with acetylene conversion reaching 80% and vinyl chloride selectivity over 98% at 200 degrees C. Experimental studies and theoretical simulations reveal that the carbon atoms bonded with pyrrolic nitrogen atoms are the active sites. This proof- of- concept study demonstrates that such a nanocomposite is a potential substitute for mercury while further work is still necessary to bring this to the industrial stage. Furthermore, the finding also provides guidance for design of carbon- based catalysts for activation of other alkynes.},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Mei, Sen; He, Longbing; Wu, Xing; Sun, Jun; Wang, Binjie; Xiong, Xiaochuan; Sun, Litao
    Dynamic Investigation of Interface Atom Migration During Heterostructure Nanojoining
    In: Nanoscale, vol. 6, no. 1, pp. 405-411, 2014, ISSN: 2040-3364.

    Links | BibTeX 标签: 原位电镜           


    @article{RN68,
    title = {Dynamic Investigation of Interface Atom Migration During Heterostructure Nanojoining},
    author = {Sen Mei and Longbing He and Xing Wu and Jun Sun and Binjie Wang and Xiaochuan Xiong and Litao Sun},
    doi = {10.1039/c3nr03911k},
    issn = {2040-3364},
    year  = {2014},
    date = {2014-01-01},
    urldate = {2014-01-01},
    journal = {Nanoscale},
    volume = {6},
    number = {1},
    pages = {405-411},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Xu, J.; Lu, A. J.; Wang, C. R.; Zou, R. J.; Liu, X. Y.; Wu, X.; Wang, Y. X.; Li, S. J.; Sun, L. T.; Chen, X. S.; Oh, H.; Baek, H.; Yi, G. C.; Chu, J. H.
    ZnSe-Based Longitudinal Twinning Nanowires
    In: Advanced Engineering Materials, vol. 16, no. 4, pp. 459-465, 2014, ISSN: 1438-1656.

    Abstract | Links | BibTeX 标签:           

    Zinc blende ZnSe longitudinal twinning nanowires and a sandwich structure with the wurtzite ZnSe inserting into the zinc blende ZnSe longitudinal twinning nanowires are fabricated via a simple thermal evaporation method. The high-resolution transmission electron microscope images of the two types of nanowires match well with simulated atomic models of them. The growth of them might be caused by the crystal plane slip during the phase transformation process between the wurtzite and the zinc blende ZnSe nanowire. The vibrating and luminescence properties of the as-grown longitudinal twinning nanowire are investigated by room-temperature Raman and low-temperature (10K) photoluminescence spectroscopy, respectively. The electrical transport properties of the two types of longitudinal twinning ZnSe nanowires and the monocrystal ZnSe nanowires were compared using in situ measurement in transmission electron microscope.


    @article{RN16,
    title = {ZnSe-Based Longitudinal Twinning Nanowires},
    author = {J. Xu and A. J. Lu and C. R. Wang and R. J. Zou and X. Y. Liu and X. Wu and Y. X. Wang and S. J. Li and L. T. Sun and X. S. Chen and H. Oh and H. Baek and G. C. Yi and J. H. Chu},
    doi = {10.1002/adem.201300405},
    issn = {1438-1656},
    year  = {2014},
    date = {2014-01-01},
    urldate = {2014-01-01},
    journal = {Advanced Engineering Materials},
    volume = {16},
    number = {4},
    pages = {459-465},
    abstract = {Zinc blende ZnSe longitudinal twinning nanowires and a sandwich structure with the wurtzite ZnSe inserting into the zinc blende ZnSe longitudinal twinning nanowires are fabricated via a simple thermal evaporation method. The high-resolution transmission electron microscope images of the two types of nanowires match well with simulated atomic models of them. The growth of them might be caused by the crystal plane slip during the phase transformation process between the wurtzite and the zinc blende ZnSe nanowire. The vibrating and luminescence properties of the as-grown longitudinal twinning nanowire are investigated by room-temperature Raman and low-temperature (10K) photoluminescence spectroscopy, respectively. The electrical transport properties of the two types of longitudinal twinning ZnSe nanowires and the monocrystal ZnSe nanowires were compared using in situ measurement in transmission electron microscope.},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Xu, X. J.; Fu, Q.; Wei, M. M.; Wu, X.; Bao, X. H.
    Comparative Studies of Redox Behaviors of Pt-Co/SiO2 and Au-Co/SiO2 Catalysts and Their Activities in CO Oxidation
    In: Catalysis Science & Technology, vol. 4, no. 9, pp. 3151-3158, 2014, ISSN: 2044-4753.

    Abstract | Links | BibTeX 标签:           

    Silica supported Pt-Co and Au-Co nanoparticles (NPs) were subjected to various redox processes and characterized by X-ray diffraction, X-ray absorption near edge structure, and X-ray photoelectron spectroscopy. We found that most of the Co oxide (CoOx) species on Pt NPs can be reduced at 100 degrees C forming an alloy structure with Pt at elevated temperatures. Oxidation of Co in the reduced sample takes place gradually with increasing temperatures. In contrast, temperatures higher than 400 degrees C are needed to reduce CoOx on Au NPs and Co atoms hardly form an alloy with Au even at 600 degrees C. The Co species in the reduced Au-Co/SiO2 sample were quickly oxidized in an O-2 atmosphere at room temperature. High CO oxidation activity was observed in the Pt-Co/SiO2 catalyst reduced below 300 degrees C; however this necessitated reduction at 600 degrees C of the Au-Co/SiO2 catalyst. The results illustrate a stronger interaction of Co (CoOx) with Pt than with Au. In both systems, the optimum treatment conditions are to produce a similar CoO-on-noble metal (NM) active structure and maximize the density of interface sites between the surface CoO structure and the NM support.


    @article{RN13,
    title = {Comparative Studies of Redox Behaviors of Pt-Co/SiO2 and Au-Co/SiO2 Catalysts and Their Activities in CO Oxidation},
    author = {X. J. Xu and Q. Fu and M. M. Wei and X. Wu and X. H. Bao},
    doi = {10.1039/c4cy00354c},
    issn = {2044-4753},
    year  = {2014},
    date = {2014-01-01},
    urldate = {2014-01-01},
    journal = {Catalysis Science & Technology},
    volume = {4},
    number = {9},
    pages = {3151-3158},
    abstract = {Silica supported Pt-Co and Au-Co nanoparticles (NPs) were subjected to various redox processes and characterized by X-ray diffraction, X-ray absorption near edge structure, and X-ray photoelectron spectroscopy. We found that most of the Co oxide (CoOx) species on Pt NPs can be reduced at 100 degrees C forming an alloy structure with Pt at elevated temperatures. Oxidation of Co in the reduced sample takes place gradually with increasing temperatures. In contrast, temperatures higher than 400 degrees C are needed to reduce CoOx on Au NPs and Co atoms hardly form an alloy with Au even at 600 degrees C. The Co species in the reduced Au-Co/SiO2 sample were quickly oxidized in an O-2 atmosphere at room temperature. High CO oxidation activity was observed in the Pt-Co/SiO2 catalyst reduced below 300 degrees C; however this necessitated reduction at 600 degrees C of the Au-Co/SiO2 catalyst. The results illustrate a stronger interaction of Co (CoOx) with Pt than with Au. In both systems, the optimum treatment conditions are to produce a similar CoO-on-noble metal (NM) active structure and maximize the density of interface sites between the surface CoO structure and the NM support.},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }


  • 2013

    Journal Article

    Zhu Z, Chu J H
    Analysis of the current conduction in poly-Si thin film transistors
    Semiconductor Science and Technology, 2013, 28: 015017.

    | 标签: 传感器

    Journal Article

    Zhu J J, Jiang K, Xu G S, Hu Z G, Li Y W, Zhu Z Q, Chu J H
    Temperature-dependent Raman scattering and multiple phase coexistence in relaxor ferroelectric Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 single crystals
    Journal of Applied Physics, 2013, 114: 153508.

    | 标签: 传感器

    Journal Article

    Zhao S R, Huang Z P, Sun L, Sun P C, Zhang C J, Wu Y H, Cao H, Wang S L, Chu J H
    Analysis of electrical property parameters of CdS/CdTe solar cells fabricated by close space-sublimation
    Acta Physica Sinica, 2013, 62: 188801.

    | 标签: 传感器

    Journal Article

    Zhao S R, Huang Z P, Sun L, Sun P C, Zhang C J, Wu Y H, Cao H, Wang S L, Chu J H
    A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells
    Acta Physica Sinica, 2013, 62: 168801.

    | 标签: 传感器

    Journal Article

    Zhao S R, Huang Z P, Sun L, Sun P C, Zhang C J, Wu Y H, Cao H, Huang Z M, Wang S L, Chu J H
    Numerical analysis of the non-ideal current-voltage characteristics of solar cell
    Journal of Infrared and Millimeter Waves, 2013, 32: 389.

    | 标签: 传感器

    Journal Article

    Zhang Y, Huang Z M, Hou Y, Zhou W, Chu J H
    Spectroscopic and electrial properties of manganese cobalt nickelate copper films prepared by chemical depopition
    Journal of Infrared and Millimeter Waves, 2013, 32: 113-117.

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    Journal Article

    Zhang X L, Hu Z G, Xu G S, Zhu J J, Li Y W, Zhu Z Q, Chu J H
    Optical bandgap and phase transition in relaxor ferroelectric Pb(Mg1/3Nb2/3) O-3-xPbTiO(3) single crystals: An inherent relationship
    Applied Physics Letters, 2013, 103: 051902.

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    Journal Article

    Zhang S, Han M J, Zhang J Z, Li Y W, Hu Z G, Chu J H
    Optoelectronic and Ferroelectric Properties of Cerium-Doped (Na0.5Bi0.5)(Ti0.99Fe0.01)O-3 Nanocrystalline Films on (111) Pt/TiO2/SiO2/Si: A Composition-Dependent Study
    Acs Applied Materials & Interfaces, 2013, 5: 3191-3198.

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    Journal Article

    Zhang Q, Chen D L, Li X, Yang P X, Chu J H, Zhao Z J
    Influence of an Electronic Field on the GMI Effect of Fe-based Nanocrystalline Microwire
    Nano-Micro Letters, 2013, 5: 13-17.

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    Journal Article

    Zhang L B, Hou Y, Zhou W, Gao Y Q, Wu J, Huang Z M, Chu J H
    Investigation on optical properties of NiMn2O4 films by spectroscopic ellipsometry
    Solid State Communications, 2013, 159: 32-35.

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    Conference

    Zhang J Z, Huang T, Li Y W, Hu Z G, Meng X J, Chu J H
    Synthesis and optical properties of the (La, Mn)-codoped BiFeO3 films on n(+)-Si(100) substrates
    proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013.

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    Journal Article

    Zhang J Z, Duan Z H, Zhang H, Han M J, Li Y W, Hu Z G, Chu J H
    Improved electric behaviors of the Pt/Bi1-xLaxFe0.92Mn0.08O3/n(+)-Si heterostructure for nonvolatile ferroelectric random-access memory
    Journal of Materials Chemistry C, 2013, 1: 6252-6258.

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    Conference

    Zhang J, Deng H, Yang P, He J, Liu T, Sun L, Chu J H
    The characterization of CuInSe2 thin films by sequential processes of sputtering and selenization
    proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013.

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    Journal Article

    Zhang C J, Wu Y H, Cao H, Zhao S R, Wang S L, Chu J H
    Effect of different annealing conditions on the properties of CdS thin films deposited by magnetron sputtering
    Journal of Infrared and Millimeter Waves, 2013, 32: 298-303.

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    Journal Article

    Zhang C J, Wu Y H, Cao H, Gao Y Q, Zhao S R, Wang S L, Chu J H
    Effects of different substrates and CdCl2 treatment on the properties of CdS thin films deposited by magnetron sputtering
    Acta Physica Sinica, 2013, 62: 158107.

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    Journal Article

    Zhang C, Cong J, Wu Y, Cao H, Wang S, Chu J H
    Visible-near Infrared Spectral Transmittance Properties for CdS Films
    Infrared Technology, 2013, 35: 259-264.

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    Yu W L, Han M J, Jiang K, Duan Z H, Li Y W, Hu Z G, Chu J H
    Enhanced Frohlich interaction of semiconductor cuprous oxide films determined by temperature-dependent Raman scattering and spectral transmittance
    Journal of Raman Spectroscopy, 2013, 44: 142-146.

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    Yu Q, Li W W, Liang J R, Duan Z H, Hu Z G, Liu J, Chen H D, Chu J H
    Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1 1)-oriented vanadium dioxide films grown by magnetron sputtering
    Journal of Physics D-Applied Physics, 2013, 46: 055310.

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    Conference

    Yao N, Ma J, Zhu X, Liang Y, Jiang J, Chu J H
    Preparation of CuInSe2 thin films by spin-coating and selenization
    proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013.

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    Yan H R, Deng H M, Ding N F, He J, Peng L, Sun L, Yang P X, Chu J H
    Influence of transition elements doping on structural, optical and magnetic properties of BiFeO3 films fabricated by magnetron sputtering
    Materials Letters, 2013, 111: 123-125.

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    Conference

    Xu L P, Zhang L L, Jiang P P, Yu J, Duan Z H, Hu Z G, Zhu Z Q, Chu J H
    Interband electronic transitions and phase transformation of multiferroic Bi1-xLaxFe1-yTiyO3 ceramics revealed by temperature-dependent spectroscopic ellipsometry
    Journal of Applied Physics, 2013, 114: 233509.

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    Conference

    Xu J, Lu A, Wang C, Chen X, Chu J H, Yi G-C
    Growth of ZnSe-based longitudinal twinning nanowires by phase transformation
    proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, China, F Sep 20-23, 2013.

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    Xiang P H, Zhong N, Duan C G, Tang X D, Hu Z G, Yang P X, Zhu Z Q, Chu J H
    Strain controlled metal-insulator transition in epitaxial NdNiO3 thin films
    Journal of Applied Physics, 2013, 114: 243713.

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    Journal Article

    Wei L M, Liu X Z, Yu G L, Gao K H, Wang Q W, Lin T, Guo S L, Wei Y F, Yang J R, He L, Dai N, Chu J H
    Antilocalization effect in HgCdTe film
    Journal of Infrared and Millimeter Waves, 2013, 32: 141-144.

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    Wei L M, Gao K H, Liu X Z, Yu G, Wang Q W, Lin T, Guo S L, Wei Y F, Yang J R, He L, Dai N, Chu J H, Austing D G
    Microwave-enhanced dephasing time in a HgCdTe film
    Applied Physics Letters, 2013, 102: 012108.

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    Conference

    Wang W J, He J, Zhang K Z, Sun L, Yang P X, Chu J H
    Characterization of Cu0.9In0.9Zn0.2Se2 Thin Films Prepared by One-step RF Magnetron Sputtering Process
    proceedings of the Proceedings of the 2013 International Conference on Material Science and Environmental Engineering, Wuhan, PEOPLES R CHINA, F Aug 17-18, 2013. Destech Publications, Inc.

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    Tu Y, Tang Z, Zhao X G, Chen Y, Zhu Z Q, Chu J H, Fang J C
    A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application
    Applied Physics Letters, 2013, 103: 072103.

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    Journal Article

    Tong J C, Huang Z M, Hou Y, Zhang L B, Zhou W, Huang J G, Chu J H
    Development of a Multiband Passive Scanning Imager
    Journal of Infrared Millimeter and Terahertz Waves, 2013, 34: 267-276.

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    Journal Article

    Tian J J, Gao H P, Deng H M, Sun L, Kong H, Yang P X, Chu J H
    Structural, magnetic and optical properties of Ni-doped TiO2 thin films deposited on silicon(100) substrates by sol-gel process
    Journal of Alloys and Compounds, 2013, 581: 318-323.

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    Journal Article

    Tian B B, Zhao X L, Liu B L, Wang J L, Han L, Sun J L, Meng X J, Chu J H
    Abnormal polarization switching of relaxor terpolymer films at low temperatures
    Applied Physics Letters, 2013, 102: 072906.

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    Journal Article

    Tian B B, Chen Z H, Jiang A Q, Zhao X L, Liu B L, Wang J L, Han L, Sun S, Sun J L, Meng X J, Chu J H
    The creep process of the domain switching in poly(vinylidene fluoride-trifluoroethylene) ferroelectric thin films
    Applied Physics Letters, 2013, 103: 042909.

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    Tao B R, Miao F J, Chu J H
    Structure and photoelectrochemical properties of silicon microstructures arrays
    Electrochimica Acta, 2013, 108: 248-252.

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    Tang Z, Sun F, Han B, Yu K, Zhu Z Q, Chu J H
    Tuning Interlayer Exchange Coupling of Co-Doped TiO2/VO2 Multilayers via Metal-Insulator Transition
    Physical Review Letters, 2013, 111: 107203.

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    Journal Article

    Sun Q, Deng H M, Yang P X, Chu J H
    The influence of La content on photovoltaic effect of PZT thin films
    Journal of Infrared and Millimeter Waves, 2013, 32: 128-131.

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    Journal Article

    Shen Y D, Li Y W, Jiang K, Zhang J Z, Duan Z H, Hu Z G, Chu J H
    Fabrication and temperature-dependent band gap shrinkage of alpha-phase Bi2O3 thin films grown by atomic layer deposition method
    European Physical Journal-Applied Physics, 2013, 62: 20303.

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    Conference

    Shan C, Huang T, Hu Z, Chu J H
    Growth and physical properties of Ba1-xLaxSnO3 films grown on SrTiO3 substrates by sol-gel method
    proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013 2013.

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    Peng L, Deng H M, Tian J J, Ren Q, Peng C, Huang Z P, Yang P X, Chu J H
    Influence of Co doping on structural, optical and magnetic properties of BiFeO3 films deposited on quartz substrates by sol-gel method
    Applied Surface Science, 2013, 268: 146-150.

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    Journal Article

    Peng C, Yang P X, Wu L C, Song Z T, Rao F, Song S N, Zhou D, Chu J H
    Nitrogen-doped Ge3Te2 materials with self-restricted active region for low power phase-change memory
    Journal of Applied Physics, 2013, 113: 034310.

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    Journal Article

    Peng C, Wu L C, Rao F, Song Z T, Lv S L, Zhou X L, Du X F, Cheng Y, Yang P X, Chu J H
    A simple method used to evaluate phase-change materials based on focused-ion beam technique
    Applied Physics Letters, 2013, 102: 203510.

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    Conference

    Ouyang C, Zhou W, Wu J, Chu J H, Huang Z
    Fabrication and performance of uncooled infrared bolometer based on Mn1.56Co0.96Ni0.48O4 thin films
    proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013.

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    Journal Article

    Miao F J, Wang Z, Tao B R, Chu J H, Chu P K
    Composition dependence of structural, optical, and photoelectrochemical properties of nanocrystalline neodymium-doped titania photocatalyst
    Electrochimica Acta, 2013, 112: 32-36.

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    Journal Article

    Miao F J, Tao B R, Jiang K, Zhang J Z, Li W W, Hu Z G, Chu J H, Chu P K
    Photoluminescence properties of ordered Bi4-xNdxTi3O12 matrix supported by 3-dimensional silicon microchannel plate
    Journal of Physics D-Applied Physics, 2013, 46: 315105.

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    Journal Article

    Miao F J, Tao B R, Chu J H
    Nonenzymatic Alkaline Direct Glucose Fuel Cell With a Silicon Microchannel Plate Supported Electrocatalytic Electrode
    Journal of Fuel Cell Science and Technology, 2013, 10: 041003.

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    Conference

    Ma J, Liang Y, Yao N, Zhu X, Jiang J, Chu J H
    Effects of post annealing on structural, electrical and optical properties of ZnO:Al thin films prepared by RF magnetron sputtering
    proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013, 2013.

    | 标签: 传感器

    Journal Article

    Liu X Z, Yu G, Wei L M, Lin T, Xu Y G, Yang J R, Wei Y F, Guo S L, Chu J H, Rowell N L, Lockwood D J
    The nonlinear Rashba effect in Hg0.77Cd0.23Te inversion layers probed by weak antilocalization analysis
    Journal of Applied Physics, 2013, 113: 013704.

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    Journal Article

    Liu X Z, Xu Y G, Yu G, Wei L M, Lin T, Guo S L, Chu J H, Zhou W Z, Zhang Y G, Lockwood D J
    The effective g-factor in In0.53Ga0.47As/In0.52Al0.48As quantum well investigated by magnetotransport measurement
    Journal of Applied Physics, 2013, 113: 033704.

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    Conference

    Liu T, Deng H, Yang P, Zhang J, Cao H, He J, Chu J H
    Growth and Characterization of Sb2Te3 Thin Film Deposited by Pulsed Laser Method
    proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013, 2013.

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    Journal Article

    Liu J, Bai W, Yang J, Xu W F, Zhang Y Y, Lin T, Meng X J, Duan C G, Tang X D, Chu J H
    The Cr-substitution concentration dependence of the structural, electric and magnetic behaviors for Aurivillius Bi5Ti3FeO15 multiferroic ceramics
    Journal of Applied Physics, 2013, 114: 234101.

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    Journal Article

    Liu A, Han H, Wei L, Wang P, Lin F, Shi W, Meng X, Sun J, Chu J H, Jing C
    Microstructure and electrical properties Of PMNT thin films prepared by a modified sol-gel process
    proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 20-23, 2013, 2013.

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    Journal Article

    Jing C B, Zhang C J, Chu J H
    Formation and characterization of nanoporous structures on surface of LPD-derived GeO2 ceramic film
    Journal of Porous Materials, 2013, 20: 359-365.

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    Conference

    Jing C, Guo H, Bai W, Hu Z, Yang J, Yang P, Chu J H, Liu A, Lin F
    Structure and magnetic properties of Ge99.04Mn0.96 thin film prepared by thermal evaporation of Mn doped GeO2 ceramic film under hydrogen atmosphere
    proceedings of the Eighth International Conference on Thin Film Physics and Applications, Shanghai, China, F Sep 20-23, 2013, 2013.

    | 标签: 传感器

    Conference

    Jiang L, Meng X J, Zhao X L, Tian B B, Liu B L, Yuan G L, Wang J L, Sun J L, Chu J H
    The evolution of activation field with temperature in ferroelectric copolymer of vinylidene fluoride and trifluoroethylene films
    proceedings of the 3rd International Conference on Chemical Engineering and Advanced Materials (CEAM 2013), Guangzhou, PEOPLES R CHINA, F Jul 06-07, 2013.

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    Journal Article

    Huo X X, Peng X Y, Liu W, Mo X L, Chen G R, Wang S L, Chu J H
    Comparison between the effects of CdCl2 heat treatment on CdTe films prepared by RF magnetron sputtering and close spaced sublimation methods
    Journal of Materials Science-Materials in Electronics, 2013, 24: 2479-2484.

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    Journal Article

    Huang J G, Lu J X, Zhou W, Tong J C, Huang Z M, Chu J H
    Investigation of high power terahertz emission in gap crystal based on collinear difference frequency generation
    Acta Physica Sinica, 2013, 62: 120704.

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    Journal Article

    Huang J G, Huang Z M, Tong J C, Ouyang C, Chu J H, Andreev Y, Kokh K, Lanskii G
    Shaiduko A. Intensive terahertz emission from GaSe0.91S0.09 under collinear difference frequency generation
    Applied Physics Letters, 2013, 103: 081104.

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    Hong X K, Liu Y S, Feng J F, Chu J H
    Thermal spin current through a double quantum dot molecular junction in the Coulomb blockade regime
    Journal of Applied Physics, 2013, 114: 144309.

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    He J, Sun L, Zhang K Z, Wang W J, Jiang J C, Chen Y, Yang P X, Chu J H
    Effect of post-sulfurization on the composition, structure and optical properties of Cu2ZnSnS4 thin films deposited by sputtering from a single quaternary target
    Applied Surface Science, 2013, 264: 133-138.

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    Han M J, Duan Z H, Zhang J Z, Zhang S, Li Y W, Hu Z G, Chu J H
    Electronic transition and electrical transport properties of delafossite CuCr1-xMgxO2 (0 <= x <= 12%) films prepared by the sol-gel method: A composition dependence study
    Journal of Applied Physics, 2013, 114: 163526.

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    Gong S J, Duan C G, Zhu Y, Zhu Z Q, Chu J H
    Controlling Rashba spin splitting in Au(111) surface states through electric field
    Physical Review B, 2013, 87: 035403.

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    Gong S J, Ding H C, Zhu W J, Duan C G, Zhu Z Q, Chu J H
    A new pathway towards all-electric spintronics: electric-field control of spin states through surface/interface effects
    Science China-Physics Mechanics & Astronomy, 2013, 56: 232-244.

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    Journal Article

    Ge J, Jiang J C, Hu G J, Zhang X L, Zuo S H, Yang L H, Ma J H, Cao M, Yang P X, Chu J H
    Effect of Na2S2O3 center dot 5H(2)O concentration on the properties of Cu-2 ZnSn(S, Se)(4) thin films fabricated by selenization of co-electroplated Cu-Zn-Sn-S precursors
    Journal of Infrared and Millimeter Waves, 2013, 32: 289.

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    Conference

    Gao Y Q, Huang Z M, Hou Y, Wu J, Chu J H
    Optical and electrical properties of Mn1.56Co0.96Ni0.48O4 thin films
    proceedings of the Eighth International Conference on Thin Film Physics and Applications (TFPA13), Shanghai, China, F 2013, 2013 SPIE.

    | 标签: 传感器

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    Gao Y C, Duan C G, Tang X D, Hu Z G, Yang P X, Zhu Z Q, Chu J H
    A first-principles study on the intrinsic asymmetric ferroelectricity of the SrTiO3-BaTiO3-CaTiO3 tricolor superlattice at the nanoscale
    Journal of Physics-Condensed Matter, 2013, 25: 165901.

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    Gao K H, Wang Q W, Lin T, Li Z Q, Zhang X H, Xu J, Deng H Y, Chu J H
    Large magnetoresistance in (In, Zn)As/InAs p-n junction
    Epl, 2013, 102: 37009.

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    Gao K H, Lin T, Liu X D, Zhang X H, Li X N, Wu J, Liu Y F, Wang X F, Chen Y W, Ni B, Dai N, Chu J H
    Low temperature electrical transport properties of F-doped SnO2 films
    Solid State Communications, 2013, 157: 49-53.

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    Journal Article

    Gao H P, Tian J J, Kong H, Yang P X, Zhang W F, Chu J H
    Optical and magnetic properties of mixed crystal Ti0.95Ni0.05O2 films deposited on Si substrates by sol-gel method
    Surface & Coatings Technology, 2013, 228: 162-166.

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    Journal Article

    Duan Z H, Hu Z G, Jiang K, Li Y W, Wang G S, Dong X L, Chu J H
    Temperature-dependent dielectric functions and interband critical points of relaxor lead hafnate-modified PbSc1/2Ta1/2O3 ferroelectric ceramics by spectroscopic ellipsometry
    Applied Physics Letters, 2013, 102: 151908.

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    Cong R, Hu G J, Yu G L, Chu J H, Dai N
    Electrical and optical performance of PbZr0.4Ti0.6O3 optical microcavity derived from one single chemical solution
    Journal of Applied Physics, 2013, 114: 044107.

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    Journal Article

    Cong R, Hu G J, Hong X K, Yu G L, Chu J H, Dai N
    Microstructure and Optical Property in an Irregular Multilayer Comprising Ferroelectric and Paraelectric Materials
    Journal of the American Ceramic Society, 2013, 96: 355-357.

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    Journal Article

    Chen X, Jiang P P, Duan Z H, Hu Z G, Chen X F, Wang G S, Dong X L, Chu J H
    The A-site driven phase transition procedure of (Pb0.97La0.02)(Zr0.42Sn0.40Ti0.18)O-3 ceramics: An evidence from electronic structure variation
    Applied Physics Letters, 2013, 103: 192910.

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    Journal Article

    Chen X, Hu Z G, Duan Z H, Chen X F, Wang G S, Dong X L, Chu J H
    Effects from A-site substitution on morphotropic phase boundary and phonon modes of (Pb1-1.5xLax)(Zr0.42Sn0.40T0.18)O-3 ceramics by temperature dependent Raman spectroscopy
    Journal of Applied Physics, 2013, 114: 043507.

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    Journal Article

    Chen G, Bai W, Sun L, Wu J, Ren Q, Xu W F, Yang J, Meng X J, Tang X D, Duan C G, Chu J H
    Processing optimization and sintering time dependent magnetic and optical behaviors of Aurivillius Bi5Ti3FeO15 ceramics
    Journal of Applied Physics, 2013, 113: 034901.

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    Journal Article

    Cao H, Chu J H, Wang S L, Wu Y H, Zhang C J
    Effects of deposition parameters on Cd1-xZnx Te films prepared by RF magnetron sputtering
    Journal of Infrared and Millimeter Waves, 2013, 32: 97-101.

    | 标签: 传感器

    Journal Article

    He, C. L.;  Li, J. F.;  Wu, X.;  Chen, P.;  Zhao, J.;  Yin, K. B.;  Cheng, M.;  Yang, W.;  Xie, G. B.;  Wang, D. M.;  Liu, D. H.;  Yang, R.;  Shi, D. X.;  Li, Z. Y.;  Sun, L. T.;  Zhang, G. Y.
    Tunable Electroluminescence in Planar Graphene/SiO2 Memristors
    In: Advanced Materials, vol. 25, no. 39, pp. 5593-+, 2013, ISSN: 0935-9648.

    Abstract | Links | BibTeX 标签: 原位电镜           

    Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.


    @article{RN18,
    title = {Tunable Electroluminescence in Planar Graphene/SiO2 Memristors},
    author = {C. L. He and J. F. Li and X. Wu and P. Chen and J. Zhao and K. B. Yin and M. Cheng and W. Yang and G. B. Xie and D. M. Wang and D. H. Liu and R. Yang and D. X. Shi and Z. Y. Li and L. T. Sun and G. Y. Zhang},
    doi = {10.1002/adma.201302447},
    issn = {0935-9648},
    year  = {2013},
    date = {2013-01-01},
    urldate = {2013-01-01},
    journal = {Advanced Materials},
    volume = {25},
    number = {39},
    pages = {5593-+},
    abstract = {Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Liu, Xiaofei;  Xu, Tao;  Wu, Xing;  Zhang, Zhuhua;  Yu, Jin;  Qiu, Hao;  Hong, Jin-Hua;  Jin, Chuan-Hong;  Li, Ji-Xue;  Wang, Xin-Ran;  Sun, Li-Tao;  Guo, Wanlin
    Top-Down Fabrication of Sub-Nanometre Semiconducting Nanoribbons Derived From Molybdenum Disulfide Sheets
    In: Nature Communications, vol. 4, 2013. ISSN: 2041-1723.

    Abstract | Links | BibTeX 标签: 原位电镜           

    Developments in semiconductor technology are propelling the dimensions of devices down to 10 nm, but facing great challenges in manufacture at the sub-10 nm scale. Nanotechnology can fabricate nanoribbons from two-dimensional atomic crystals, such as graphene, with widths below the 10 nm threshold, but their geometries and properties have been hard to control at this scale. Here we find that robust ultrafine molybdenum-sulfide ribbons with a uniform width of 0.35nm can be widely formed between holes created in a MoS2 sheet under electron irradiation. In situ high-resolution transmission electron microscope characterization, combined with first-principles calculations, identifies the sub-1 nm ribbon as a Mo5S4 crystal derived from MoS2, through a spontaneous phase transition. Further first-principles investigations show that the Mo5S4 ribbon has a band gap of 0.77 eV, a Young's modulus of 300GPa and can demonstrate 9% tensile strain before fracture. The results show a novel top-down route for controllable fabrication of functional building blocks for sub-nanometre electronics.

    doi:10.1038/ncomms2803           


    @article{RN1,
    title = {Top-Down Fabrication of Sub-Nanometre Semiconducting Nanoribbons Derived From Molybdenum Disulfide Sheets},
    author = {Xiaofei Liu and Tao Xu and Xing Wu and Zhuhua Zhang and Jin Yu and Hao Qiu and Jin-Hua Hong and Chuan-Hong Jin and Ji-Xue Li and Xin-Ran Wang and Li-Tao Sun and Wanlin Guo},
    doi = {10.1038/ncomms2803},
    issn = {2041-1723},
    year  = {2013},
    date = {2013-01-01},
    urldate = {2013-01-01},
    journal = {Nature Communications},
    volume = {4},
    abstract = {Developments in semiconductor technology are propelling the dimensions of devices down to 10 nm, but facing great challenges in manufacture at the sub-10 nm scale. Nanotechnology can fabricate nanoribbons from two-dimensional atomic crystals, such as graphene, with widths below the 10 nm threshold, but their geometries and properties have been hard to control at this scale. Here we find that robust ultrafine molybdenum-sulfide ribbons with a uniform width of 0.35nm can be widely formed between holes created in a MoS2 sheet under electron irradiation. In situ high-resolution transmission electron microscope characterization, combined with first-principles calculations, identifies the sub-1 nm ribbon as a Mo5S4 crystal derived from MoS2, through a spontaneous phase transition. Further first-principles investigations show that the Mo5S4 ribbon has a band gap of 0.77 eV, a Young's modulus of 300GPa and can demonstrate 9% tensile strain before fracture. The results show a novel top-down route for controllable fabrication of functional building blocks for sub-nanometre electronics.},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Liu, Y. L.;  Nan, H. Y.;  Wu, X.;  Pan, W.;  Wang, W. H.;  Bai, J.;  Zhao, W. W.;  Sun, L. T.;  Wang, X. R.;  Ni, Z. H.
    Layer-by-Layer Thinning of MoS2 by Plasma
    In: ACS Nano, vol. 7, no. 5,  pp. 4202-4209, 2013, ISSN: 1936-0851.

    Abstract | Links | BibTeX 标签:           

    The electronic structures of two-dimensional materials are strongly dependent on their thicknesses; for example, there is an indirect to direct band gap transition from multilayer to single-layer MoS2. A simple, efficient, and nondestructive way to control the thickness of MoS2 is highly desirable for the study of thickness-dependent properties as well as for applications. Here, we present layer-by-layer thinning of MoS2 nanosheets down to monolayer by using Ar+ plasma. Atomic force microscopy, high-resolution transmission electron microscopy, optical contrast, Raman, and photoluminescence spectra suggest that the top layer MoS2 is totally removed by plasma while the bottom layer remains almost unaffected. The evolution of Raman and photoluminescence spectra of MoS2 with thickness change is also investigated. Finally, we demonstrate that this method can be used to prepare two-dimensional heterostructures with periodical single-layer and bilayer MoS2. The plasma thinning of MoS2 is very reliable (with almost 100% success rate), can be easily scaled up, and Is compatible with standard semiconductor process to generate heterostructures/patterns at nanometer scale, which may bring out Interesting properties and new physics.


              


    @article{RN19,
    title = {Layer-by-Layer Thinning of MoS2 by Plasma},
    author = {Y. L. Liu and H. Y. Nan and X. Wu and W. Pan and W. H. Wang and J. Bai and W. W. Zhao and L. T. Sun and X. R. Wang and Z. H. Ni},
    url = {<Go to ISI>://WOS:000319856300057},
    doi = {10.1021/nn400644t},
    issn = {1936-0851},
    year  = {2013},
    date = {2013-01-01},
    urldate = {2013-01-01},
    journal = {ACS Nano},
    volume = {7},
    number = {5},
    pages = {4202-4209},
    abstract = {The electronic structures of two-dimensional materials are strongly dependent on their thicknesses; for example, there is an indirect to direct band gap transition from multilayer to single-layer MoS2. A simple, efficient, and nondestructive way to control the thickness of MoS2 is highly desirable for the study of thickness-dependent properties as well as for applications. Here, we present layer-by-layer thinning of MoS2 nanosheets down to monolayer by using Ar+ plasma. Atomic force microscopy, high-resolution transmission electron microscopy, optical contrast, Raman, and photoluminescence spectra suggest that the top layer MoS2 is totally removed by plasma while the bottom layer remains almost unaffected. The evolution of Raman and photoluminescence spectra of MoS2 with thickness change is also investigated. Finally, we demonstrate that this method can be used to prepare two-dimensional heterostructures with periodical single-layer and bilayer MoS2. The plasma thinning of MoS2 is very reliable (with almost 100% success rate), can be easily scaled up, and Is compatible with standard semiconductor process to generate heterostructures/patterns at nanometer scale, which may bring out Interesting properties and new physics.},
    keywords = {},
    pubstate = {published},
    tppubtype = {article}
    }


    Conference

    Pey, K. L.;  Shubhakar, K.;  Raghavan, N.;  Wu, X.;  Bosman, M.
    Impact of Local Variations in High-k dielectric on Breakdown and Recovery Characteristics of Advanced Gate Stacks
    2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) , 2013.

    Links | BibTeX 标签: 原位电镜可靠性           


    @conference{RN72,
    title = {Impact of Local Variations in High-k dielectric on Breakdown and Recovery Characteristics of Advanced Gate Stacks},
    author = {K. L. Pey and K. Shubhakar and N. Raghavan and X. Wu and M. Bosman},
    doi = {10.1109/edssc.2013.6628192},
    year  = {2013},
    date = {2013-01-01},
    urldate = {2013-01-01},
    booktitle = {2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) },
    journal = {2013 IEEE International Conference of Electron Devices and Solid-state Circuits (EDSSC)},
    pages = {2 pp.-2 pp.},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }


    Journal Article

    Raghavan, N.;  Padovani, A.;  Li, X.;  Wu, X.;  Lo, V. L.;  Bosman, M.;  Larcher, L.;  Pey, K. L.
    Resilience of Ultra-Thin Oxynitride Films to Percolative Wear-Out and Reliability Implications For High-Kappa Stacks at Low Voltage Stress
    In: Journal of Applied Physics, vol. 114, no. 9, pp. 8, 2013. ISSN: 0021-8979.

    Abstract | Links | BibTeX 标签: 可靠性           

    Localized progressive wear-out and degradation of ultra-thin dielectrics around the oxygen vacancy percolation path formed during accelerated time dependent dielectric breakdown tests is a well-known phenomenon documented for silicon oxynitride (SiON) based gate stacks in metal oxide semiconductor field effect transistors. This progressive or post breakdown stage involves an initial phase characterized by "digital" random telegraph noise fluctuations followed by the wear-out of the percolation path, which results in an änalog" increase in the leakage current, culminating in a thermal runaway and hard breakdown. The relative contribution of the digital and analog phases of degradation at very low voltage stress in ultra-thin SiON (16 angstrom) is yet to be fully investigated, which represents the core of this study. We investigate the wear-out process by combining electrical and physical analysis evidences with modeling and simulation results using Kinetic Monte Carlo defect generation and multi-phonon trap assisted tunneling (PTAT) models. We show that the transition from the digital to the analog regime is governed by a critical voltage (V-CRIT), which determines the reliability margin in the post breakdown phase. Our results have a significant impact on the post-breakdown operational reliability of SiON and advanced high-kappa-SiOx interfacial layer gate stacks, wherein the SiOx layer seems to be the weakest link for percolation event. (C) 2013 AIP Publishing LLC.

    doi:10.1063/1.4819445           


    @article{RN22,
    title = {Resilience of Ultra-Thin Oxynitride Films to Percolative Wear-Out and Reliability Implications For High-Kappa Stacks at Low Voltage Stress},
    author = {N. Raghavan and A. Padovani and X. Li and X. Wu and V. L. Lo and M. Bosman and L. Larcher and K. L. Pey},
    doi = {10.1063/1.4819445},
    issn = {0021-8979},
    year  = {2013},
    date = {2013-01-01},
    urldate = {2013-01-01},
    journal = {Journal of Applied Physics},
    volume = {114},
    number = {9},
    pages = {8},
    abstract = {Localized progressive wear-out and degradation of ultra-thin dielectrics around the oxygen vacancy percolation path formed during accelerated time dependent dielectric breakdown tests is a well-known phenomenon documented for silicon oxynitride (SiON) based gate stacks in metal oxide semiconductor field effect transistors. This progressive or post breakdown stage involves an initial phase characterized by "digital" random telegraph noise fluctuations followed by the wear-out of the percolation path, which results in an änalog" increase in the leakage current, culminating in a thermal runaway and hard breakdown. The relative contribution of the digital and analog phases of degradation at very low voltage stress in ultra-thin SiON (16 angstrom) is yet to be fully investigated, which represents the core of this study. We investigate the wear-out process by combining electrical and physical analysis evidences with modeling and simulation results using Kinetic Monte Carlo defect generation and multi-phonon trap assisted tunneling (PTAT) models. We show that the transition from the digital to the analog regime is governed by a critical voltage (V-CRIT), which determines the reliability margin in the post breakdown phase. Our results have a significant impact on the post-breakdown operational reliability of SiON and advanced high-kappa-SiOx interfacial layer gate stacks, wherein the SiOx layer seems to be the weakest link for percolation event. (C) 2013 AIP Publishing LLC.},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


    Conference

    Raghavan, N.; Padovani, A.; Wu, X.; Shubhakar, K.; Bosman, M.; Larcher, L.; Pey, K. L.
    The Buffering Role of High-Kappa in Post Breakdown Degradation Immunity of Advanced Dual Layer Dielectric Gate Stacks
    2013 IEEE International Reliability Physics Symposium (IRPS), 2013.

    Links | BibTeX 标签: 可靠性           


    @conference{RN73,
    title = {The Buffering Role of High-Kappa in Post Breakdown Degradation Immunity of Advanced Dual Layer Dielectric Gate Stacks},
    author = {N. Raghavan and A. Padovani and X. Wu and K. Shubhakar and M. Bosman and L. Larcher and K. L. Pey},
    doi = {10.1109/irps.2013.6532020},
    year  = {2013},
    date = {2013-01-01},
    urldate = {2013-01-01},
    booktitle = {2013 IEEE International Reliability Physics Symposium (IRPS)},
    journal = {2013 IEEE International Reliability Physics Symposium (IRPS)},
    pages = {5A.3.1-8},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }


    Journal Article

    Raghavan, Nagarajan;  Wu, Xing;  Bosman, Michel;  Pey, Kin Leong.
    Feasibility of SILC Recovery in Sub-10-angstrom EOT Advanced Metal Gate-High-kappa Stacks
    In: IEEE Electron Device Letters, vol. 34, no. 8, pp. 1053-1055, 2013. ISSN: 0741-3106.

    Links | BibTeX 标签: 可靠性           


    @article{RN69,
    title = {Feasibility of SILC Recovery in Sub-10-angstrom EOT Advanced Metal Gate-High-kappa Stacks},
    author = {Nagarajan Raghavan and Xing Wu and Michel Bosman and Kin Leong Pey},
    doi = {10.1109/led.2013.2268246},
    issn = {0741-3106},
    year  = {2013},
    date = {2013-01-01},
    urldate = {2013-01-01},
    journal = {IEEE Electron Device Letters},
    volume = {34},
    number = {8},
    pages = {1053-1055},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }
    Conference

    Sun, J.;  Wu, X.;  Liu, Q.;  Liu, M.;  Sun, L. T.
    Real Time Observation of Nanoscale Multiple Conductive Filaments in RRAM by Using Advanced In-Situ TEM
    Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, Ieee, 2013, ISBN: 978-1-4799-1241-4.

    Abstract | Links | BibTeX 标签: 原位电镜可靠性           

    In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the ZrO 2-based device. Using in-situ transmission electron microscopy, we observe in real time that multiple conductive filaments (CFs) are formed across the ZrO 2 layer between top electrode and bottom electrodes after forming. Various top electrode materials have been used, such as Cu, Ag, and Ni. Contrary to common belief, it is found that CF growth begins at the anode, rather than having to reach the cathode and grow backwards. Energy-dispersive X-ray spectroscopy results confirm that metal from the top electrode is the main composition of the CFs.           


    @conference{RN38,
    title = {Real Time Observation of Nanoscale Multiple Conductive Filaments in RRAM by Using Advanced In-Situ TEM},
    author = {J. Sun and X. Wu and Q. Liu and M. Liu and L. T. Sun},
    doi = {10.1109/ipfa.2013.6599223},
    isbn = {978-1-4799-1241-4},
    year  = {2013},
    date = {2013-01-01},
    urldate = {2013-01-01},
    booktitle = {Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits},
    pages = {560-562},
    publisher = {Ieee},
    abstract = {In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the ZrO 2-based device. Using in-situ transmission electron microscopy, we observe in real time that multiple conductive filaments (CFs) are formed across the ZrO 2 layer between top electrode and bottom electrodes after forming. Various top electrode materials have been used, such as Cu, Ag, and Ni. Contrary to common belief, it is found that CF growth begins at the anode, rather than having to reach the cathode and grow backwards. Energy-dispersive X-ray spectroscopy results confirm that metal from the top electrode is the main composition of the CFs.},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }


    Journal Article

    Xu, F.;  Chen, J.;  Wu, X.;  Zhang, Y.;  Wang, Y. X.;  Sun, J.;  Bi, H. C.;  Lei, W.;  Ni, Y. R.;  Sun, L. T.
    Graphene Scaffolds Enhanced Photogenerated Electron Transport in ZnO Photoanodes for High-Efficiency Dye-Sensitized Solar Cells
    In: Journal of Physical Chemistry C, vol. 117, no. 17, pp. 8619-8627, 2013, ISSN: 1932-7447

    Abstract | Links | BibTeX 标签: 原位电镜石墨烯           

    Graphene and ZnO, as two star, materials Were united to constitute the photoanode of dye sensitized solar cells (DSSCs) Highly electronically conductive graphene scaffolds incorporated into ZnO hierarchically structured nanoparticle. (HSN) photoanodes could simultaneously capture and transport photogenerated electrons injected into ZnO by excited dyes. This strategy was beneficial for electrons to fluently transfer to the collection electrode due to the decreased internal resistance and electron recombination loss. On the basis of these advantages, the DSSC incorporating 1.2 wt % graphene into the ZnO photoanode with 3 mu m in thickness exhibited a high short-circuit photocurrent density (J(sc)) of 10.89 mA/cm(2) and a power conversion efficiency (PCE) of 3.19%, which were increased by 43.48% and 38.09%, respectively, compared with those of the DSSC without graphene. It was found that the incorporated graphene could markedly prolong electron lifetime (tau(eff)) and effective diffusion length (L-n), which allowed the utilization of thicker photoanodes that could afford enhanced surface area for higher dye loading and light harvesting. Thus, an impressively high PCE of 5.86% was achieved for the DSSC composed of 9-mu m-thick ZnO photoanode, which could be the highest PCE compared with previous reports with the same thick photoanodes. These results demonstrate potential application of graphene for improving the performance of DSSCs.

    doi:10.1021/jp312379b           


    @article{RN3,
    title = {Graphene Scaffolds Enhanced Photogenerated Electron Transport in ZnO Photoanodes for High-Efficiency Dye-Sensitized Solar Cells},
    author = {F. Xu and J. Chen and X. Wu and Y. Zhang and Y. X. Wang and J. Sun and H. C. Bi and W. Lei and Y. R. Ni and L. T. Sun},
    doi = {10.1021/jp312379b},
    issn = {1932-7447},
    year  = {2013},
    date = {2013-01-01},
    urldate = {2013-01-01},
    journal = {Journal of Physical Chemistry C},
    volume = {117},
    number = {17},
    pages = {8619-8627},
    abstract = {Graphene and ZnO, as two star, materials Were united to constitute the photoanode of dye sensitized solar cells (DSSCs) Highly electronically conductive graphene scaffolds incorporated into ZnO hierarchically structured nanoparticle. (HSN) photoanodes could simultaneously capture and transport photogenerated electrons injected into ZnO by excited dyes. This strategy was beneficial for electrons to fluently transfer to the collection electrode due to the decreased internal resistance and electron recombination loss. On the basis of these advantages, the DSSC incorporating 1.2 wt % graphene into the ZnO photoanode with 3 mu m in thickness exhibited a high short-circuit photocurrent density (J(sc)) of 10.89 mA/cm(2) and a power conversion efficiency (PCE) of 3.19%, which were increased by 43.48% and 38.09%, respectively, compared with those of the DSSC without graphene. It was found that the incorporated graphene could markedly prolong electron lifetime (tau(eff)) and effective diffusion length (L-n), which allowed the utilization of thicker photoanodes that could afford enhanced surface area for higher dye loading and light harvesting. Thus, an impressively high PCE of 5.86% was achieved for the DSSC composed of 9-mu m-thick ZnO photoanode, which could be the highest PCE compared with previous reports with the same thick photoanodes. These results demonstrate potential application of graphene for improving the performance of DSSCs.},
    keywords = {原位电镜, 石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Zafar, Z.;  Ni, Z. H.;  Wu, X.;  Shi, Z. X.;  Nan, H. Y.;  Bai, J.;  Sun, L. T.
    Evolution of Raman Spectra in Nitrogen Doped Graphene
    In: Carbon, vol. 61, pp. 57-62, 2013, ISSN: 0008-6223.

    Abstract | Links | BibTeX 标签: 石墨烯           

    We present systematical Raman studies of nitrogen doped graphene (NG). Defective graphene by Ar+ ion bombardment was also studied for comparison. It was found that the defects/nitrogen dopants in NG are not homogenous. Our results also suggest that the G peak position and I-2D/I-G ratio cannot be simply used as fingerprint of doping concentration in NG. Both doping and compressive strain (as verified by transmission electron microscope) contribute to the shift of Raman peaks, while both doping and lattice defects contribute to the attenuation of 2D peak. Finally, the nature of defects in NG was probed and found that they are boundary defects. The detail analysis of the evolution of Raman spectra in NG would greatly help on the characterization and future application of this novel material. (C) 2013 Elsevier Ltd. All rights reserved.           


    @article{RN21,
    title = {Evolution of Raman Spectra in Nitrogen Doped Graphene},
    author = {Z. Zafar and Z. H. Ni and X. Wu and Z. X. Shi and H. Y. Nan and J. Bai and L. T. Sun},
    doi = {10.1016/j.carbon.2013.04.065},
    issn = {0008-6223},
    year  = {2013},
    date = {2013-01-01},
    urldate = {2013-01-01},
    journal = {Carbon},
    volume = {61},
    pages = {57-62},
    abstract = {We present systematical Raman studies of nitrogen doped graphene (NG). Defective graphene by Ar+ ion bombardment was also studied for comparison. It was found that the defects/nitrogen dopants in NG are not homogenous. Our results also suggest that the G peak position and I-2D/I-G ratio cannot be simply used as fingerprint of doping concentration in NG. Both doping and compressive strain (as verified by transmission electron microscope) contribute to the shift of Raman peaks, while both doping and lattice defects contribute to the attenuation of 2D peak. Finally, the nature of defects in NG was probed and found that they are boundary defects. The detail analysis of the evolution of Raman spectra in NG would greatly help on the characterization and future application of this novel material. (C) 2013 Elsevier Ltd. All rights reserved.},
    keywords = {石墨烯},
    pubstate = {published},
    tppubtype = {article}
    }


    Conference

    Pey, K. L.;  Raghavan, N.;  Liu, W. H.;  Wu, X.;  Shubhakar, K.;  Bosman, M.
    Real-Time Analysis of Ultra-Thin Gate Dielectric Breakdown and Recovery: A Reality
    2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) , 2013.

    Links | BibTeX 标签: 原位电镜可靠性           


    @conference{RN203,
    title = {Real-Time Analysis of Ultra-Thin Gate Dielectric Breakdown and Recovery: A Reality},
    author = {K. L. Pey and N. Raghavan and W. H. Liu and X. Wu and K. Shubhakar and M. Bosman},
    doi = {10.1109/ipfa.2013.6599175},
    year  = {2013},
    date = {2013-01-01},
    urldate = {2013-01-01},
    booktitle = {2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) },
    journal = {Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)},
    pages = {319-31},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }


    Conference

    Xing, Wu;  Litao, Sun
    Advanced Methodologies for Atomic-Scale Nanofabrication and Dynamic Characterization
    2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) , 2013.

    Links | BibTeX 标签: 原位电镜可靠性           


    @conference{RN198,
    title = {Advanced Methodologies for Atomic-Scale Nanofabrication and Dynamic Characterization},
    author = {Wu Xing and Sun Litao},
    doi = {10.1109/ipfa.2013.6599188},
    year  = {2013},
    date = {2013-01-01},
    urldate = {2013-01-01},
    booktitle = {2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) },
    journal = {Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)},
    pages = {393-9},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }


  • 2012

    Journal Article

    Zhu Z, Chu J H
    QUASI TWO-DIMENSIONAL ANALYSIS OF THE SURFACE POTENTIAL FOR POLY-Si THIN FILM TRANSISTORS BASED ON THE CHANNEL POTENTIAL
    International Journal of Modern Physics B, 2012, 26: 1250069.

    | 标签: 传感器

    Journal Article

    Zhu L Q, Shao J, Lin T, Lu X, Zhu J Y, Tang X D, Chu J H
    Photoionization absorption and zero-field spin splitting of acceptor-bound magnetic polaron in p-type Hg1-xMnxTe single crystals
    Journal of Applied Physics, 2012, 111: 083502.

    | 标签: 传感器

    Journal Article

    Zhu L Q, Lin T, Guo S L, Chu J H
    The mechanism of negative magnetoresistance in nondegenerate p-type Hg1-xMnxTe (x > 0.17) monocrystal
    Acta Physica Sinica, 2012, 61: 087501.

    | 标签: 传感器

    Journal Article

    Zhou Y M, Yu G, Lin T, Dai N, Chu J H
    Magneto-transport study of Landau level broadening in a gated AlGaAs/GaAs parabolic quantum well structure
    Physica B-Condensed Matter, 2012, 407: 116-119.

    | 标签: 传感器

    Journal Article

    Zhou W Z, Wang W, Chang Z G, Wang Y Z, Lan Z Q, Shang L Y, Lin T, Cui L J, Zeng Y P, Li G X, Yu C H, Guo J, Chu J H
    Effects of scattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells
    Journal of Applied Physics, 2012, 112: 023713.

    | 标签: 传感器

    Journal Article

    Zhou D, Tang Y X, Wang F F, Xie D Z, Sun D Z, Shi W Z, Tian L, Sun J L, Meng X J, Chu J H, Kong W J, Luo L H
    Improved dielectric and electrical insulating properties in Pb(Mg1/3Nb2/3)(0.62)Ti0.38O3 based multilayer ferroelectric thin films
    Thin Solid Films, 2012, 522: 457-462.

    | 标签: 传感器

    Journal Article

    Zhang Z X, Shu X Z, Chu J H, Li Z
    Accurate atmospheric transmittance model for O-2 absorption band near 762 nm
    Journal of Infrared and Millimeter Waves, 2012, 31: 203-209.

    | 标签: 传感器

    Journal Article

    Zhang X H, Chen L, Lin T, He L, Guo S L, Chu J H
    Photoluminescence and electrical characteristics of arsenic-doped HgCdTe
    Journal of Infrared and Millimeter Waves, 2012, 31: 407-410.

    | 标签: 传感器

    Journal Article

    Zhang W J, Duan Z H, Jiang K, Hu Z G, Wang G S, Dong X L, Chu J H
    Electronic band structures, dielectric functions and interband transitions of relaxor ferroelectric (1-x) Pb (Sc1/2Ta1/2) O-3-xPbHfO(3) ceramics: A spectroscopic reflectance study
    Acta Materialia, 2012, 60: 6175-6182.

    | 标签: 传感器

    Journal Article

    Zhang J Z, Han M J, Li Y W, Hu Z G, Chu J H
    Enhanced Raman scattering and photoluminescence of Bi3.25La0.75Ti3O12 nanotube arrays for optical and ferroelectric multifunctional applications
    Applied Physics Letters, 2012, 101: 081903.

    | 标签: 传感器

    Journal Article

    Zhan Z N, Hu Z G, Meng K K, Zhao J H, Chu J H
    Temperature dependent phonon Raman scattering of Heusler alloy Co2MnxFe1-xAl/GaAs films grown by molecular-beam epitaxy
    Rsc Advances, 2012, 2: 9899-9903.

    | 标签: 传感器

    Journal Article

    Yue F Y, Chen L, Li Y W, Sun L, Yang P X, Chu J H
    The determination of the x value in doped Hg1-xCdxTe by transmission spectra
    Chinese Physics B, 2012, 21: 017804.

    | 标签: 传感器

    Journal Article

    Yang J, He J, Zhu J Y, Bai W, Sun L, Meng X J, Tang X D, Duan C G, Remiens D, Qiu J H, Chu J H
    Small polaron migration associated multiple dielectric responses of multiferroic DyMnO3 polycrystal in low temperature region
    Applied Physics Letters, 2012, 101: 222904.

    | 标签: 传感器

    Journal Article

    Xu X F, He X F, Wang H Y, Gu Q J, Shi S X, Xing H Z, Wang C R, Zhang J, Chen X S, Chu J H
    The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures
    Applied Surface Science, 2012, 261: 83-87.

    | 标签: 传感器

    Journal Article

    Wei L M, Zhou Y M, Yu G L, Gao K H, Liu X Z, Lin T, Guo S L, Dai N, Chu J H
    Guy A D. Effective g-factor in high-mobility InGaAs/InP quantum well
    Acta Physica Sinica, 2012, 61: 127102.

    | 标签: 传感器

    Journal Article

    Wang W, Zhou W, Wei S, Li X, Chang Z, Lin T, Shang L, Han K, Duan J, Tang N, Shen B, Chu J H
    Magneto-resistance for two-dimensional electron gas in GaN/Al_xGa_(1-x)N heterostructure
    Acta Physica Sinica, 2012, 61: 237302.

    | 标签: 传感器

    Conference

    Tian L, Meng X, Yang J, Sun J, Yuan S, Wang J, Bai W, Chu J H
    Relaxor properties and tunability of electron-irradiated thin poly(vinlidene fluoride-trifluoroethylene) copolymer film
    proceedings of the Spring International Conference on Material Sciences and Technology (MST-S), Xian, PEOPLES R CHINA, F May 27-30, 2012, 2012.

    | 标签: 传感器

    Journal Article

    Tian J J, Deng H M, Sun L, Kong H, Yang P X, Chu J H
    Influence of Ni doping on phase transformation and optical properties of TiO2 films deposited on quartz substrates by sol-gel process
    Applied Surface Science, 2012, 258: 4893-4897.

    | 标签: 传感器

    Journal Article

    Tian J J, Deng H M, Sun L, Kong H, Yang P X, Chu J H
    Effects of Co doping on structure and optical properties of TiO2 thin films prepared by sol-gel method
    Thin Solid Films, 2012, 520: 5179-5183.

    | 标签: 传感器

    Journal Article

    Tang Y X, Zhou D, Tian Y, Li X, Wang F F, Sun D Z, Shi W Z, Tian L, Sun J L, Meng X J, Chu J H
    Low-Temperature Processing of High-Performance 0.74Pb(Mg1/3Nb2/3)O-3-0.26PbTiO(3) Thin Films on La0.6Sr0.4CoO3-Buffered Si Substrates for Pyroelectric Arrays Applications
    Journal of the American Ceramic Society, 2012, 95: 1367-1371.

    | 标签: 传感器

    Journal Article

    Sun Y H, Yang P X, Chen Y, Shang L Y, Chu J H
    Numerical evaluation of grading benefits in CdS/CdZnTe band-gap back graded solar cells
    Optoelectronics and Advanced Materials-Rapid Communications, 2012, 6: 280-283.

    | 标签: 传感器

    Journal Article

    Sun L, He J, Chen Y, Yue F Y, Yang P X, Chu J H
    Comparative study on Cu2ZnSnS4 thin films deposited by sputtering and pulsed laser deposition from a single quaternary sulfide target
    Journal of Crystal Growth, 2012, 361: 147-151.

    | 标签: 传感器

    Journal Article

    Shen Y D, Li Y W, Zhang J Z, Zhu X, Hu Z G, Chu J H
    Excellent insulating behavior Al2O3 thin films grown by atomic layer deposition efficiently at room temperature
    Optoelectronics and Advanced Materials-Rapid Communications, 2012, 6: 618-622.

    | 标签: 传感器

    Journal Article

    Shen Y D, Li Y W, Li W M, Zhang J Z, Hu Z G, Chu J H
    Growth of Bi2O3 Ultrathin Films by Atomic Layer Deposition
    Journal of Physical Chemistry C, 2012, 116: 3449-3456.

    | 标签: 传感器

    Journal Article

    Peng C, Yang P X, Wu L C, Song Z T, Rao F, Xu J A, Zhou X L, Zhu M, Liu B, Chu J H
    N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory
    Electrochemical and Solid State Letters, 2012, 15: H101-H104.

    | 标签: 传感器

    Journal Article

    Peng C, Wu L C, Rao F, Song Z T, Yang P X, Cheng L M, Li J T, Zhou X L, Zhu M, Liu B, Chu J H
    Improved Thermal Stability and Electrical Properties for Al-Sb-Te Based Phase-Change Memory
    Ecs Solid State Letters, 2012, 1: 38-41.

    | 标签: 传感器

    Journal Article

    Peng C, Wu L, Rao F, Song Z, Yang P, Song H, Ren K, Zhou X, Zhu M, Liu B, Chu J H
    W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention
    Applied Physics Letters, 2012, 101: 122108

    | 标签: 传感器

    Journal Article

    Miao F J, Tao B R, Chu J H
    Fabrication of arrays of one-dimensional porous silicon photonic crystal
    Journal of Infrared and Millimeter Waves, 2012, 31: 311.

    | 标签: 传感器

    Journal Article

    Lin T, Shang L Y, Zhou W Z, Meng X J, Sun J L, Yu G, Guo S L, Chu J H
    Competing conduction mechanisms of two-dimensional electrons and bulk-like electrons in the n-type surface of the naturally oxidized p-type HgCdTe thin film
    Applied Physics a-Materials Science & Processing, 2012, 106: 703-707.

    | 标签: 传感器

    Journal Article

    Liao Y Y, Li Y W, Hu Z G, Chu J H
    Temperature dependent phonon Raman scattering of highly a-axis oriented CoFe2O4 inverse spinel ferromagnetic films grown by pulsed laser deposition
    Applied Physics Letters, 2012, 100: 071905.

    | 标签: 传感器

    Conference

    Li Y, Jing C, Chu J H
    Attenuated total reflectance (ATR) GeO2 hollow infrared waveguides deposited from aqueous germanate ion solutions with different GeO2 concentrations
    proceedings of the 2011 Asia Communications and Photonics Conference and Exhibition, Shanghai, China, F Nov 13-16, 2011, 2012.

    | 标签: 传感器

    Journal Article

    Li W, Jiang K, Zhang J, Chen X, Hu Z, Chen S, Sun L, Chu J H
    Temperature dependence of phonon modes, dielectric functions, and interband electronic transitions in Cu2ZnSnS4 semiconductor films
    Phys Chem Chem Phys, 2012, 14: 9936-9941.

    | 标签: 传感器

    Journal Article

    Jing C B, Sun W, Wang W, Li Y, Chu J H
    Morphology and crystal phase evolution of GeO2 in liquid phase deposition process
    Journal of Crystal Growth, 2012, 338: 195-200.

    | 标签: 传感器

    Journal Article

    Jiang K, Zhang J Z, Yu W L, Hu Z G, Chu J H
    Manganese doping effects on interband electronic transitions, lattice vibrations, and dielectric functions of perovskite-type Ba0.4Sr0.6TiO3 ferroelectric ceramics
    Applied Physics a-Materials Science & Processing, 2012, 106: 877-884.

    | 标签: 传感器

    Journal Article

    Jiang K, Li W W, Chen X G, Zhan Z N, Sun L, Hu Z G, Chu J H
    Doping effect on the phase transition temperature in ferroelectric SrBi2-xNdxNb2O9 layer-structured ceramics: a micro-Raman scattering study
    Journal of Raman Spectroscopy, 2012, 43: 583-587.

    | 标签: 传感器

    Journal Article

    He Y, Dou Y N, Ma X G, Chen S B, Chu J H
    Passivation and stability of thermal atomic layer deposited Al2O3 on CZ-Si
    Acta Physica Sinica, 2012, 61: 248102.

    | 标签: 传感器

    Journal Article

    He J, Sun L, Ding N F, Kong H, Zuo S H, Chen S Y, Chen Y, Yang P X, Chu J H
    Single-step preparation and characterization of Cu2ZnSn(SxSe1-x)(4) thin films deposited by pulsed laser deposition method
    Journal of Alloys and Compounds, 2012, 529: 34-37.

    | 标签: 传感器

    Journal Article

    He J, Sun L, Chen S Y, Chen Y, Yang P X, Chu J H
    Composition dependence of structure and optical properties of Cu2ZnSn(S,Se)(4) solid solutions: An experimental study
    Journal of Alloys and Compounds, 2012, 511: 129-132.

    | 标签: 传感器

    Journal Article

    Han M, Jiang K, Zhang J, Yu W, Li Y, Hu Z, Chu J H
    Structural, electronic band transition and optoelectronic properties of delafossite CuGa1-xCrxO2 (0 <= x <= 1) solid solution films grown by the sol-gel method
    Journal of Materials Chemistry, 2012, 22: 18463-18470.

    | 标签: 传感器

    Journal Article

    Gong S J, Duan C G, Zhu Z Q, Chu J H
    Manipulation of magnetic anisotropy of Fe/graphene by charge injection
    Applied Physics Letters, 2012, 100: 122410.

    | 标签: 传感器

    Journal Article

    Ge J, Zuo S H, Jiang J C, Ma J H, Yang L H, Yang P X, Chu J H
    Investigation of Se supply for the growth of Cu2ZnSn(SxSe1-x)(4) (x approximate to 0.02-0.05) thin films for photovoltaics
    Applied Surface Science, 2012, 258: 7844-7848.

    | 标签: 传感器

    Journal Article

    Ge J, Yu W L, Cao H, Jiang J C, Ma J H, Yang L H, Yang P X, Hu Z G, Chu J H
    Fabrication of Cu2ZnSnS4 absorbers by sulfurization of Sn-rich precursors
    Physica Status Solidi a-Applications and Materials Science, 2012, 209: 1493-1497.

    | 标签: 传感器

    Journal Article

    Ge J, Wu Y H, Zhang C J, Zuo S H, Jiang J C, Ma J H, Yang P X, Chu J H
    Comparative study of the influence of two distinct sulfurization ramping rates on the properties of Cu2ZnSnS4 thin films
    Applied Surface Science, 2012, 258: 7250-7254.

    | 标签: 传感器

    Journal Article

    Gao W L, Deng H M, Yang P X, Chu J H
    Influences of Zn and Mnions co-dopants on the optical and ferroelectric properties of BaTiO3 thin films
    Journal of Infrared and Millimeter Waves, 2012, 31: 193-196.

    | 标签: 传感器

    Journal Article

    Gao K H, Wei L M, Yu G L, Yang R, Lin T, Wei Y F, Yang J R, Sun L, Dai N, Chu J H
    Magnetotransport property of HgCdTe inversion layer
    Acta Physica Sinica, 2012, 61: 027301.

    | 标签: 传感器

    Journal Article

    Gao K H, Lin T, Wei L M, Liu X Z, Chen X, Yu G, Gu Y, Zhang Y G, Dai N, Chu J H
    Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well
    Solid State Communications, 2012, 152: 1042-1046.

    | 标签: 传感器

    Journal Article

    Gao H, Zhang C-j, Wang S-l, Chu J H
    Residual stress of Zr thin film deposited by magnetic sputtering
    Laser Technology, 2012, 36: 742-744.

    | 标签: 传感器

    Journal Article

    Gao C, Yang J, Meng X J, Bai W, Lin T, Sun J L, Chu J H
    The effect of Nd doping on microstructure and electrical properties of BiFeO3 thin films
    Journal of Infrared and Millimeter Waves, 2012, 31: 21-25.

    | 标签: 传感器

    Journal Article

    Duan Z H, Yu Q, Wu J D, Sun J, Hu Z G, Chu J H
    Lattice dynamics and dielectric functions of multiferroic BiFeO3/c-sapphire films determined by infrared reflectance spectra and temperature-dependent Raman scattering
    Thin Solid Films, 2012, 525: 188-194.

    | 标签: 传感器

    Journal Article

    Dou Y N, He Y, Ma X G, Qiao Q, Chen X J, Wang Y Q, Chen R, Chu J H
    Effect of CH4 flow rate on the optical properties of Boron-doped a-SiC:H films
    Journal of Infrared and Millimeter Waves, 2012, 31: 5-10.

    | 标签: 传感器

    Journal Article

    Dou Y N, He Y, Huang C Y, Zhou C L, Ma X G, Chen R, Chu J H
    Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3 on crystalline-Si
    Applied Physics a-Materials Science & Processing, 2012, 109: 673-677.

    | 标签: 传感器

    Journal Article

    Ding N F, Deng H M, Yang P X, Chu J H
    Structure and optical properties of BiFe1-xZnxO3 thin films fabricated by pulsed laser deposition
    Materials Letters, 2012, 82: 71-73.

    | 标签: 传感器

    Journal Article

    Deng H, Deng H M, Yang P X, Chu J H
    Effect of Cr doping on the structure, optical and magnetic properties of multiferroic BiFeO3 thin films
    Journal of Materials Science-Materials in Electronics, 2012, 23: 1215-1218.

    | 标签: 传感器

    Journal Article

    Cui Y F, Zuo S H, Jiang J C, Chu J H
    Effect of the concentration of Cu2+ in the electrolytes on CuInS2 thin films
    Journal of Infrared and Millimeter Waves, 2012, 31: 102.

    | 标签: 传感器

    Journal Article

    Chen X G, Li W W, Wu J D, Sun J, Jiang K, Hu Z G, Chu J H
    Temperature dependence of electronic band transition in Mn-doped SnO2 nanocrystalline films determined by ultraviolet-near-infrared transmittance spectra
    Materials Research Bulletin, 2012, 47: 111-116.

    | 标签: 传感器

    Journal Article

    Cao H, Zhang C-j, Wang S-l, Chu J H
    Research of uniformity of C8H8 filters
    Laser Technology, 2012, 36: 623-626.

    | 标签: 传感器

    Journal Article

    Cao H, Zhang C-j, Wang S-l, Chu J H
    Research of uniformity of C8H8 filters
    Laser Technology, 2012, 36: 623-626.

    | 标签: 传感器

    Journal Article

    Bai W, Zhu J Y, Wang J L, Lin T, Yang J, Meng X J, Tang X D, Zhu Z Q, Chu J H
    Effects of annealing temperature on the structures, ferroelectric and magnetic properties of Aurivillius Bi5Ti3FeO15 polycrystalline films
    Journal of Magnetism and Magnetic Materials, 2012, 324: 2265-2270.

    | 标签: 传感器

    Journal Article

    Bai W, Chen G, Zhu J Y, Yang J, Lin T, Meng X J, Tang X D, Duan C G, Chu J H
    Dielectric responses and scaling behaviors in Aurivillius Bi6Ti3Fe2O18 multiferroic thin films
    Applied Physics Letters, 2012, 100: 082902.

    | 标签: 传感器

    Journal Article


    Chen, Y. N.; Goh, K. E. J.; Wu, X.; Lwin, Z. Z.; Singh, P. K.; Mahapatra, S.; Pey, K. L.
    Temperature-Dependent Relaxation Current on Single and Dual Layer Pt Metal Nanocrystal-Based Al2O3/SiO2 Gate Stack
    In: Journal of Applied Physics, vol. 112, no. 10, pp. 6, 2012, ISSN: 0021-8979.

    Abstract | Links | BibTeX 标签: 可靠性           

    We present a systematic investigation of the temperature dependent relaxation current behavior for single layer and dual layer Pt metal nanocrystal (MNC)-based Al2O3/SiO2 flash memory gate stacks. Stacks containing single layer Pt MNC exhibit a dual-slope behavior in the log-log plots of the relaxation transient, whereas those with dual layer Pt MNC exhibit a single-slope behavior. We propose a physical model embodying two competing relaxation mechanisms to explain the Pt MNC induced relaxation current-thermionic emission and the quantum tunneling. Based on this model, the dual-slope behavior of single layer MNC-based gate stack can be ascribed to the dominance of thermionic emission at the initial part and quantum tunneling at the tail part. In contrast, the single slope behavior of the dual layer metal nanocrystal-based stack arises from the dominance of the quantum tunneling throughout the relaxation. In addition, we verify that stacks containing dual layer MNC show better retention property than their single layer counterparts. Our results demonstrate that relaxation current measurements offer a simple way to assess the charge retention capability for MNC-based gate stacks. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764873]           

    <Go to ISI>://WOS:000311969800145    

    doi:10.1063/1.4764873          


    @article{RN26,
    title = {Temperature-Dependent Relaxation Current on Single and Dual Layer Pt Metal Nanocrystal-Based Al2O3/SiO2 Gate Stack},
    author = {Y. N. Chen and K. E. J. Goh and X. Wu and Z. Z. Lwin and P. K. Singh and S. Mahapatra and K. L. Pey},
    url = {<Go to ISI>://WOS:000311969800145},
    doi = {10.1063/1.4764873},
    issn = {0021-8979},
    year  = {2012},
    date = {2012-01-01},
    urldate = {2012-01-01},
    journal = {Journal of Applied Physics},
    volume = {112},
    number = {10},
    pages = {6},
    abstract = {We present a systematic investigation of the temperature dependent relaxation current behavior for single layer and dual layer Pt metal nanocrystal (MNC)-based Al2O3/SiO2 flash memory gate stacks. Stacks containing single layer Pt MNC exhibit a dual-slope behavior in the log-log plots of the relaxation transient, whereas those with dual layer Pt MNC exhibit a single-slope behavior. We propose a physical model embodying two competing relaxation mechanisms to explain the Pt MNC induced relaxation current-thermionic emission and the quantum tunneling. Based on this model, the dual-slope behavior of single layer MNC-based gate stack can be ascribed to the dominance of thermionic emission at the initial part and quantum tunneling at the tail part. In contrast, the single slope behavior of the dual layer metal nanocrystal-based stack arises from the dominance of the quantum tunneling throughout the relaxation. In addition, we verify that stacks containing dual layer MNC show better retention property than their single layer counterparts. Our results demonstrate that relaxation current measurements offer a simple way to assess the charge retention capability for MNC-based gate stacks. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764873]},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }
       


    Journal Article

    Liu, W. H.; Pey, K. L.; Raghavan, N.; Wu, X.; Bosman, M.
    Triggering Voltage for Post-Breakdown Random Telegraph Noise in HfLaO Dielectric Metal Gate Metal-Oxide-Semiconductor Field Effect Transistors and Its Reliability Implications
    In: Journal of Applied Physics, vol. 111, no. 2, pp. 5, 2012, ISSN: 0021-8979.

    Abstract | Links | BibTeX 标签: 可靠性           

    We report a triggering voltage V-trig for observing gate leakage current (I-g) random telegraph noise (RTN) in the post-breakdown regime of HfLaO dielectric metal gate stacks. V-trig, the onset voltage to observe RTN in degraded dielectrics, is highly dependent on breakdown hardness, which is controlled by the leakage current compliance (I-gl). This dependence is qualitatively analyzed using a percolation dilation model, where generation of additional traps either at different energy levels or spatial locations gives lower V-trig at higher I-gl. The magnitude of V-trig can be used as a direct indication of the impact of RTN on the performance of the transistor at device level, when V-trig is evaluated by comparing with the device operating voltage. (C) 2012 American Institute of Physics. [doi:10.1063/1.3676255]           

    <Go to ISI>://WOS:000299792400059    

    doi:10.1063/1.3676255          


    @article{RN27,
    title = {Triggering Voltage for Post-Breakdown Random Telegraph Noise in HfLaO Dielectric Metal Gate Metal-Oxide-Semiconductor Field Effect Transistors and Its Reliability Implications},
    author = {W. H. Liu and K. L. Pey and N. Raghavan and X. Wu and M. Bosman},
    url = {<Go to ISI>://WOS:000299792400059},
    doi = {10.1063/1.3676255},
    issn = {0021-8979},
    year  = {2012},
    date = {2012-01-01},
    urldate = {2012-01-01},
    journal = {Journal of Applied Physics},
    volume = {111},
    number = {2},
    pages = {5},
    abstract = {We report a triggering voltage V-trig for observing gate leakage current (I-g) random telegraph noise (RTN) in the post-breakdown regime of HfLaO dielectric metal gate stacks. V-trig, the onset voltage to observe RTN in degraded dielectrics, is highly dependent on breakdown hardness, which is controlled by the leakage current compliance (I-gl). This dependence is qualitatively analyzed using a percolation dilation model, where generation of additional traps either at different energy levels or spatial locations gives lower V-trig at higher I-gl. The magnitude of V-trig can be used as a direct indication of the impact of RTN on the performance of the transistor at device level, when V-trig is evaluated by comparing with the device operating voltage. (C) 2012 American Institute of Physics. [doi:10.1063/1.3676255]},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }
       


    Journal Article

    Raghavan, N.; Pey, K. L.; Wu, X.; Liu, W. H.; Bosman, M.
    Percolative Model and Thermodynamic Analysis of Oxygen-Ion-Mediated Resistive Switching
    In: IEEE Electron Device Letters, vol. 33, no. 5, pp. 712-714, 2012, ISSN: 0741-3106.

    Abstract | Links | BibTeX 标签: 可靠性           

    We present a statistical percolation model for retention lifetime assessment of resistive switching memory at the high-resistance state and correlate it to the soft breakdown phenomenon in ultrathin gate dielectrics. Electrical characterization in the low-resistance state shows that the location of oxygen-vacancy-based conductive filaments is almost randomly distributed and the trap generation rate across the oxide after reset transition is uniform. The constraints for the range of read voltages in the low and high conduction states, governed by the area of the device and the thermodynamics of oxygen ion transport, are presented.           

    <Go to ISI>://WOS:000303322500028

    doi:10.1109/led.2012.2187170          


    @article{RN25,
    title = {Percolative Model and Thermodynamic Analysis of Oxygen-Ion-Mediated Resistive Switching},
    author = {N. Raghavan and K. L. Pey and X. Wu and W. H. Liu and M. Bosman},
    url = {<Go to ISI>://WOS:000303322500028},
    doi = {10.1109/led.2012.2187170},
    issn = {0741-3106},
    year  = {2012},
    date = {2012-01-01},
    urldate = {2012-01-01},
    journal = {IEEE Electron Device Letters},
    volume = {33},
    number = {5},
    pages = {712-714},
    abstract = {We present a statistical percolation model for retention lifetime assessment of resistive switching memory at the high-resistance state and correlate it to the soft breakdown phenomenon in ultrathin gate dielectrics. Electrical characterization in the low-resistance state shows that the location of oxygen-vacancy-based conductive filaments is almost randomly distributed and the trap generation rate across the oxide after reset transition is uniform. The constraints for the range of read voltages in the low and high conduction states, governed by the area of the device and the thermodynamics of oxygen ion transport, are presented.},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


    Conference

    Leong, Pey Kin; Raghavan, N.; Xing, Wu; Liu, W.; Bosman, M.
    Dielectric Breakdown - Recovery in Logic and Resistive Switching in Memory - Bridging the Gap Between the Two Phenomena
    2012, (2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ).

    Links | BibTeX 标签: 原位电镜可靠性           


    @conference{RN206,
    title = {Dielectric Breakdown - Recovery in Logic and Resistive Switching in Memory - Bridging the Gap Between the Two Phenomena},
    author = {Pey Kin Leong and N. Raghavan and Wu Xing and W. Liu and M. Bosman},
    doi = {10.1109/icsict.2012.6467690},
    year  = {2012},
    date = {2012-01-01},
    urldate = {2012-01-01},
    journal = {2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)},
    pages = {6 pp.-6 pp.},
    note = {2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) },
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }


    Journal Article

    Raghavan, N.; Pey, K. L.; Shubhakar, K.; Wu, X.; Liu, W. H.; Bosman, M.
    Role of Grain Boundary Percolative Defects and Localized Trap Generation on The Reliability Statistics of High-Kappa Gate Dielectric Stacks
    In: 2012 IEEE International Reliability Physics Symposium (IRPS), pp. 6A.1.1-11, 2012, (2012 IEEE International Reliability Physics Symposium (IRPS) 15-19 April 2012 Anaheim, CA, USA IEEE Electron Devices Soc. 0 978-1-4577-1678-2).

    Links | BibTeX 标签: 可靠性           

    doi:10.1109/irps.2012.6241862          

    <Go to ISI>://INSPEC:12880200


    @article{RN207,
    title = {Role of Grain Boundary Percolative Defects and Localized Trap Generation on The Reliability Statistics of High-Kappa Gate Dielectric Stacks},
    author = {N. Raghavan and K. L. Pey and K. Shubhakar and X. Wu and W. H. Liu and M. Bosman},
    url = {<Go to ISI>://INSPEC:12880200},
    doi = {10.1109/irps.2012.6241862},
    year  = {2012},
    date = {2012-01-01},
    urldate = {2012-01-01},
    journal = {2012 IEEE International Reliability Physics Symposium (IRPS)},
    pages = {6A.1.1-11},
    note = {2012 IEEE International Reliability Physics Symposium (IRPS) 
    15-19 April 2012 
    Anaheim, CA, USA 
    IEEE Electron Devices Soc. 
    0 
    978-1-4577-1678-2},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


    Conference

    Shubhakar, K.; Pey, K. L.; Bosman, M.; Thamankar, R.; Kushvaha, S. S.; Loke, Y. C.; Wang, Z. R.; Raghavan, N.; Wu, X.; O'Shea, S. J.
    Nanoscale Physical Analysis of Localized Breakdown Events in HfO2/SiOx Dielectric Stacks: A Correlation Study of STM Induced BD with C-AFM and TEM
    2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2012.

    Links | BibTeX 标签: 原位电镜可靠性           


    @conference{RN210,
    title = {Nanoscale Physical Analysis of Localized Breakdown Events in HfO2/SiOx Dielectric Stacks: A Correlation Study of STM Induced BD with C-AFM and TEM},
    author = {K. Shubhakar and K. L. Pey and M. Bosman and R. Thamankar and S. S. Kushvaha and Y. C. Loke and Z. R. Wang and N. Raghavan and X. Wu and S. J. O'Shea},
    doi = {10.1109/ipfa.2012.6306264},
    year  = {2012},
    date = {2012-01-01},
    urldate = {2012-01-01},
    booktitle = {2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)},
    journal = {2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2012)},
    pages = {7 pp.-7 pp.},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }


  • 2011

    Journal Article

    Bai W, Gao Y Q, Zhu J Y, Meng X J, Lin T, Yang J, Zhu Z Q, Chu J H
    Electrical, magnetic, and optical properties in multiferroic Bi5Ti3FeO15 thin films prepared by a chemical solution deposition route
    Journal of Applied Physics, 2011, 109: 064901.

    | 标签: 传感器

    Journal Article

    Liu, W. H.; Pey, K. L.; Wu, X.; Raghavan, N.; Padovani, A.; Larcher, L.; Vandelli, L.; Bosman, M.; Kauerauf, T. 

    Threshold Shift observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of fForming Gas Anneal

    In: Applied Physics Letters, vol. 99, no. 23, pp. 3, 2011, ISSN: 0003-6951.

    Abstract | Links | BibTeX 标签: 可靠性           

    The resistive switching mechanism, which is crucial for the operations of resistive random access memory (RRAM) devices, is investigated using HfO2 based MOSFETs. After the SET operation, MOSFETs exhibit a threshold voltage (V-T) shift that is found to be closely related to the formation of conductive filaments in the gate oxide. The RESET operation performed through a forming gas anneal treatment is found to have the same effect of applying a reverse polarity gate voltage sweep, as usually done in bipolar switching RRAM devices. After RESET, the gate current and VT measured shift back to their pristine levels, indicating the passivation of oxygen vacancies (forming the conductive path) as the most likely physical mechanism responsible for RRAMs RESET operation. Transmission electron microscopy analysis and physical simulations support these conclusions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3669525]           


       

    @article{RN30,
    title = {Threshold Shift observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of fForming Gas Anneal},
    author = {W. H. Liu and K. L. Pey and X. Wu and N. Raghavan and A. Padovani and L. Larcher and L. Vandelli and M. Bosman and T. Kauerauf},
    doi = {10.1063/1.3669525},
    issn = {0003-6951},
    year  = {2011},
    date = {2011-01-01},
    urldate = {2011-01-01},
    journal = {Applied Physics Letters},
    volume = {99},
    number = {23},
    pages = {3},
    abstract = {The resistive switching mechanism, which is crucial for the operations of resistive random access memory (RRAM) devices, is investigated using HfO2 based MOSFETs. After the SET operation, MOSFETs exhibit a threshold voltage (V-T) shift that is found to be closely related to the formation of conductive filaments in the gate oxide. The RESET operation performed through a forming gas anneal treatment is found to have the same effect of applying a reverse polarity gate voltage sweep, as usually done in bipolar switching RRAM devices. After RESET, the gate current and VT measured shift back to their pristine levels, indicating the passivation of oxygen vacancies (forming the conductive path) as the most likely physical mechanism responsible for RRAMs RESET operation. Transmission electron microscopy analysis and physical simulations support these conclusions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3669525]},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }
       


       

    Journal Article

    Pey, K. L.; Raghavan, N.; Wu, X.; Liu, W. H.; Li, X.; Bosman, M.; Shubhakar, K.; Lwin, Z. Z.; Chen, Y. N.; Qin, H. L.; Kauerauf, T.

    Physical Analysis of Breakdown in High-Kappa/Metal Gate Stacks Using TEM/EELS and STM for Reliability Enhancement (invited) 

    In: Microelectronic Engineering, vol. 88, no. 7, pp. 1365-1372, 2011, ISSN: 0167-9317.

    Abstract | Links | BibTeX 标签: 可靠性           

    In this invited paper, we demonstrate how physical analysis techniques that are commonly used in integrated circuits failure analysis can be applied to detect the failure defects associated with ultrathin gate dielectric wear-out and breakdown in high-kappa materials and investigate the associated failure mechanism(s) based on the defect chemistry. The key contributions of this work are perhaps focused on two areas: (1) how to correlate the failure mechanisms in high-kappa/metal gate technology during wear-out and breakdown to device processing and materials and (2) how the understanding of these new failure mechanisms can be used in proposing "design for reliability" (DFR) initiatives for complex and expensive future CMOS nanoelectronic technology nodes of 22 nm and 15 nm. Hf-based high-kappa materials in conjunction with various gate electrode technologies will be used as main examples while other potential high-kappa gate materials such as cerium oxide (CeO2) will also be demonstrated to further illustrate the concept of DFR. (C) 2011 Elsevier B.V. All rights reserved.


    @article{RN33,
    title = {Physical Analysis of Breakdown in High-Kappa/Metal Gate Stacks Using TEM/EELS and STM for Reliability Enhancement (invited)},
    author = {K. L. Pey and N. Raghavan and X. Wu and W. H. Liu and X. Li and M. Bosman and K. Shubhakar and Z. Z. Lwin and Y. N. Chen and H. L. Qin and T. Kauerauf},
    doi = {10.1016/j.mee.2011.03.012},
    issn = {0167-9317},
    year  = {2011},
    date = {2011-01-01},
    urldate = {2011-01-01},
    journal = {Microelectronic Engineering},
    volume = {88},
    number = {7},
    pages = {1365-1372},
    abstract = {In this invited paper, we demonstrate how physical analysis techniques that are commonly used in integrated circuits failure analysis can be applied to detect the failure defects associated with ultrathin gate dielectric wear-out and breakdown in high-kappa materials and investigate the associated failure mechanism(s) based on the defect chemistry. The key contributions of this work are perhaps focused on two areas: (1) how to correlate the failure mechanisms in high-kappa/metal gate technology during wear-out and breakdown to device processing and materials and (2) how the understanding of these new failure mechanisms can be used in proposing "design for reliability" (DFR) initiatives for complex and expensive future CMOS nanoelectronic technology nodes of 22 nm and 15 nm. Hf-based high-kappa materials in conjunction with various gate electrode technologies will be used as main examples while other potential high-kappa gate materials such as cerium oxide (CeO2) will also be demonstrated to further illustrate the concept of DFR. (C) 2011 Elsevier B.V. All rights reserved.},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Raghavan, N.; Liu, W. H.; Li, X. A.; Wu, X.; Bosman, M.; Pey, K. L.

    Filamentation Mechanism of Resistive Switching in Fully Silicided High-kappa Gate Stacks

     In: IEEE Electron Device Letters, vol. 32, no. 4, pp. 455-457, 2011, ISSN: 0741-3106.

    Abstract | Links | BibTeX 标签: 可靠性           

    We study the mechanism of filamentation in resistive switching (RS) memory from an electrical perspective using a conventional metal-insulator-semiconductor (MIS) high-kappa metal gate transistor test structure and propose the possibility of using the same transistor structure for both logic and RS memory applications. The filament location is measured after every SET transition, and our investigations point to a "pseudorandom" nature of filament nucleation. Migration of highly diffusive nickel from source/drain silicide contacts toward the active silicon channel region transforms the existing MIS stack to MIM, thereby enabling the RS phenomenon.


       

    @article{RN31,
    title = {Filamentation Mechanism of Resistive Switching in Fully Silicided High-kappa Gate Stacks},
    author = {N. Raghavan and W. H. Liu and X. A. Li and X. Wu and M. Bosman and K. L. Pey},
    doi = {10.1109/led.2011.2107495},
    issn = {0741-3106},
    year  = {2011},
    date = {2011-01-01},
    urldate = {2011-01-01},
    journal = {IEEE Electron Device Letters},
    volume = {32},
    number = {4},
    pages = {455-457},
    abstract = {We study the mechanism of filamentation in resistive switching (RS) memory from an electrical perspective using a conventional metal-insulator-semiconductor (MIS) high-kappa metal gate transistor test structure and propose the possibility of using the same transistor structure for both logic and RS memory applications. The filament location is measured after every SET transition, and our investigations point to a "pseudorandom" nature of filament nucleation. Migration of highly diffusive nickel from source/drain silicide contacts toward the active silicon channel region transforms the existing MIS stack to MIM, thereby enabling the RS phenomenon.},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }
       


       

    Journal Article

    Raghavan, N.; Pey, K. L.; Li, X.; Liu, W. H.; Wu, X.; Bosman, M.; Kauerauf, T. 

    Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled Regime

    In: IEEE Electron Device Letters, vol. 32, no. 6, pp. 716-718, 2011, ISSN: 0741-3106. 

    Abstract | Links | BibTeX 标签: 可靠性           

    We propose the bipolar-mode operation of resistive random access memory devices in a purely oxygen-vacancy (V-0)-controlled regime, which is achieved by very low compliance capping for forming/set transitions. This regime enables us to achieve a very low reset current of 10-100 nA, in which the governing mechanism for switching only involves the reversible drift of oxygen ions to and from oxygen soluble gate electrodes. The physical analysis of a gate stack in this V-0 regime confirms the absence of metallic nanofilaments. These findings pave the way for the realization of ultralow switching power RRAM devices.


       

    @article{RN34,
    title = {Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled Regime},
    author = {N. Raghavan and K. L. Pey and X. Li and W. H. Liu and X. Wu and M. Bosman and T. Kauerauf},
    doi = {10.1109/led.2011.2127443},
    issn = {0741-3106},
    year  = {2011},
    date = {2011-01-01},
    urldate = {2011-01-01},
    journal = {IEEE Electron Device Letters},
    volume = {32},
    number = {6},
    pages = {716-718},
    abstract = {We propose the bipolar-mode operation of resistive random access memory devices in a purely oxygen-vacancy (V-0)-controlled regime, which is achieved by very low compliance capping for forming/set transitions. This regime enables us to achieve a very low reset current of 10-100 nA, in which the governing mechanism for switching only involves the reversible drift of oxygen ions to and from oxygen soluble gate electrodes. The physical analysis of a gate stack in this V-0 regime confirms the absence of metallic nanofilaments. These findings pave the way for the realization of ultralow switching power RRAM devices.},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }
       


       

    Journal Article

    Raghavan, N.; Pey, K. L.; Liu, W. H.; Wu, X.; Li, X.; Bosman, M.

    Evidence for Compliance Controlled Oxygen Vacancy and Metal Filament Based Resistive Switching Mechanisms in RRAM 

    In: Microelectronic Engineering, vol. 88, no. 7, pp. 1124-1128, 2011, ISSN: 0167-9317. 

    Links | BibTeX 标签: 可靠性           

    <Go to ISI>://WOS:000292572700021

    doi:10.1016/j.mee.2011.03.027


    @article{RN35,
    title = {Evidence for Compliance Controlled Oxygen Vacancy and Metal Filament Based Resistive Switching Mechanisms in RRAM},
    author = {N. Raghavan and K. L. Pey and W. H. Liu and X. Wu and X. Li and M. Bosman},
    url = {<Go to ISI>://WOS:000292572700021},
    doi = {10.1016/j.mee.2011.03.027},
    issn = {0167-9317},
    year  = {2011},
    date = {2011-01-01},
    urldate = {2011-01-01},
    journal = {Microelectronic Engineering},
    volume = {88},
    number = {7},
    pages = {1124-1128},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Raghavan, N.; Pey, K. L.; Wu, X.; Liu, W. H.; Li, X. A.; Bosman, M.; Kauerauf, T.

    Oxygen-Soluble Gate Electrodes for Prolonged High-kappa Gate-Stack Reliability

    In: IEEE Electron Device Letters, vol. 32, no. 3, pp. 252-254, 2011, ISSN: 0741-3106.

    Abstract | Links | BibTeX 标签: 可靠性           

    We propose the use of high-oxygen-solubility metal-gate electrodes as a material of choice for high-kappa gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metal-oxide-semiconductor devices with these gate electrodes reveal that the application of low negative bias stress after a soft-BD (SBD) event helps to restore the oxygen ions and passivate the oxygen vacancy traps that comprise the percolation path. This can be a simple yet effective design-for-reliability tool to initiate the self-repair of the percolation path and operate the circuit for a prolonged period after repair. The only requirement for achieving this SBD reversibility is to choose gate electrodes that can serve as good oxygen reservoirs.


    @article{RN29,
    title = {Oxygen-Soluble Gate Electrodes for Prolonged High-kappa Gate-Stack Reliability},
    author = {N. Raghavan and K. L. Pey and X. Wu and W. H. Liu and X. A. Li and M. Bosman and T. Kauerauf},
    doi = {10.1109/led.2010.2099096},
    issn = {0741-3106},
    year  = {2011},
    date = {2011-01-01},
    urldate = {2011-01-01},
    journal = {IEEE Electron Device Letters},
    volume = {32},
    number = {3},
    pages = {252-254},
    abstract = {We propose the use of high-oxygen-solubility metal-gate electrodes as a material of choice for high-kappa gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metal-oxide-semiconductor devices with these gate electrodes reveal that the application of low negative bias stress after a soft-BD (SBD) event helps to restore the oxygen ions and passivate the oxygen vacancy traps that comprise the percolation path. This can be a simple yet effective design-for-reliability tool to initiate the self-repair of the percolation path and operate the circuit for a prolonged period after repair. The only requirement for achieving this SBD reversibility is to choose gate electrodes that can serve as good oxygen reservoirs.},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Wu, X.; Fang, Z.; Li, K.; Bosman, M.; Raghavan, N.; Li, X.; Yu, H. Y.; Singh, N.; Lo, G. Q.; Zhang, X. X.; Pey, K. L. 

    Chemical Insight Into Origin of Forming-Free Resistive Random-Access Memory Devices

    In: Applied Physics Letters, vol. 99, no. 13, pp. 3, 2011, ISSN: 0003-6951.

    Links | BibTeX 标签: 原位电镜可靠性           

    doi:10.1063/1.3645623           


    @article{RN6,
    title = {Chemical Insight Into Origin of Forming-Free Resistive Random-Access Memory Devices},
    author = {X. Wu and Z. Fang and K. Li and M. Bosman and N. Raghavan and X. Li and H. Y. Yu and N. Singh and G. Q. Lo and X. X. Zhang and K. L. Pey},
    doi = {10.1063/1.3645623},
    issn = {0003-6951},
    year  = {2011},
    date = {2011-01-01},
    urldate = {2011-01-01},
    journal = {Applied Physics Letters},
    volume = {99},
    number = {13},
    pages = {3},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Wu, X.; Li, K.; Raghavan, N.; Bosman, M.; Wang, Q. X.; Cha, D. K.; Zhang, X. X.; Pey, K. L.Uncorrelated Multiple Conductive Filament Nucleation and Rupture in Ultra-Thin High-Kappa Dielectric Based Resistive Random Access Memory

    In: Applied Physics Letters, vol. 99, no. 9, pp. 3, 2011, ISSN: 0003-6951.

    Links | BibTeX 标签: 原位电镜可靠性           


    @article{RN8,
    title = {Uncorrelated Multiple Conductive Filament Nucleation and Rupture in Ultra-Thin High-Kappa Dielectric Based Resistive Random Access Memory},
    author = {X. Wu and K. Li and N. Raghavan and M. Bosman and Q. X. Wang and D. K. Cha and X. X. Zhang and K. L. Pey},
    doi = {10.1063/1.3624597},
    issn = {0003-6951},
    year  = {2011},
    date = {2011-01-01},
    urldate = {2011-01-01},
    journal = {Applied Physics Letters},
    volume = {99},
    number = {9},
    pages = {3},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Wu, X.; Pey, K. L.; Raghavan, N.; Liu, W. H.; Li, X.; Bai, P.; Zhang, G.; Bosman, M.

    Using Post-Breakdown Conduction Study in A MIS Structure to Better Understand The Resistive Switching Mechanism in An MIM Stack

    In: Nanotechnology, vol. 22, no. 45, pp. 7, 2011, ISSN: 0957-4484.

    Links | BibTeX 标签: 原位电镜可靠性           


    @article{RN5,
    title = {Using Post-Breakdown Conduction Study in A MIS Structure to Better Understand The Resistive Switching Mechanism in An MIM Stack},
    author = {X. Wu and K. L. Pey and N. Raghavan and W. H. Liu and X. Li and P. Bai and G. Zhang and M. Bosman},
    doi = {10.1088/0957-4484/22/45/455702},
    issn = {0957-4484},
    year  = {2011},
    date = {2011-01-01},
    urldate = {2011-01-01},
    journal = {Nanotechnology},
    volume = {22},
    number = {45},
    pages = {7},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


    Conference

    Liu, W. H.; Pey, K. L.; Raghavan, N.; Wu, X.; Bosman, M.; Kauerauf, T.

    Random Telegraph Noise Reduction in Metal Gate High-Kappa Stacks by Bipolar Switching and the Performance Boosting Technique

    2011 IEEE International Reliability Physics Symposium (IRPS), 2011.

    Links | BibTeX 标签: 可靠性           


    @conference{RN209,
    title = {Random Telegraph Noise Reduction in Metal Gate High-Kappa Stacks by Bipolar Switching and the Performance Boosting Technique},
    author = {W. H. Liu and K. L. Pey and N. Raghavan and X. Wu and M. Bosman and T. Kauerauf},
    doi = {10.1109/irps.2011.5784474},
    year  = {2011},
    date = {2011-01-01},
    urldate = {2011-01-01},
    booktitle = {2011 IEEE International Reliability Physics Symposium (IRPS)},
    pages = {3A.1 (8 pp.)-3A.1 (8 pp.)},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }


    Conference

    Tran, X. A.;  Gao, B.;  Kang, J. F.;  Wu, X.;  Wu, L.;  Fang, Z.;  Wang, Z. R.;  Pey, K. L.;  Yeo, Y. C.;  Du, A. Y.;  Liu, M.;  Nguyen, B. Y.;  Li, M. F.;  Yu, H. Y.

    Self-Rectifying and Forming-Free Unipolar HfOx Based-High Performance RRAM Built by Fab-Avaialbe Materials

    2011 IEEE International Electron Devices Meeting (IEDM) ,

    Links | BibTeX 标签: 原位电镜


    @conference{RN208,
    title = {Self-Rectifying and Forming-Free Unipolar HfOx Based-High Performance RRAM Built by Fab-Avaialbe Materials},
    author = {X. A. Tran and B. Gao and J. F. Kang and X. Wu and L. Wu and Z. Fang and Z. R. Wang and K. L. Pey and Y. C. Yeo and A. Y. Du and M. Liu and B. Y. Nguyen and M. F. Li and H. Y. Yu},
    doi = {10.1109/iedm.2011.6131648},
    year  = {2011},
    date = {2011-01-01},
    urldate = {2011-01-01},
    booktitle = {2011 IEEE International Electron Devices Meeting (IEDM) },
    journal = {2011 IEEE International Electron Devices Meeting (IEDM 2011)},
    pages = {31.2 (4 pp.)-31.2 (4 pp.)},
    keywords = {原位电镜},
    pubstate = {published},
    tppubtype = {conference}
    }


  • 2010

    Journal Article

    Zhu M, Sun L, Li W W, Yu W L, Li Y W, Hu Z G, Chu J H
    Lattice vibrations and dielectric functions of ferroelectric SrBi2-x,NdxNb2O9 bismuth layer-structured ceramics determined by infrared reflectance spectra
    Materials Research Bulletin, 2010, 45: 1654-1658.

    | 标签: 传感器

    Journal Article

    Zhu J J, Li W W, Li Y W, Shen Y D, Hu Z G, Chu J H
    Effects of applied electrical field on electronic structures in LaNiO3 conductive metallic oxide film: An optical spectroscopic study
    Applied Physics Letters, 2010, 97: 211904.

    | 标签: 传感器

    Journal Article

    Zhou Y M, Yu G L, Gao K H, Lin T, Guo S L, Chu J H, Dai N
    Magneto-tunneling effect in weakly coupled GaAs/AlGaAs/InGaAs double quantum well tunneling structure
    Acta Physica Sinica, 2010, 59: 4221-4225.

    | 标签: 传感器

    Journal Article

    Zhou Y M, Yu G, Wei L M, Gao K H, Zhou W Z, Lin T, Shang L Y, Guo S L, Chu J H, Dai N, Austing D G
    Experimental approaches to zero-field spin splitting in a gated high-mobility In0.53Ga0.47As/InP quantum well structure: Weak antilocalization and beating pattern
    Journal of Applied Physics, 2010, 107: 053708.

    | 标签: 传感器

    Journal Article

    Zhou Y M, Gao K H, Yu G, Zhou W Z, Lin T, Guo S L, Chu J H, Dai N
    Gate-controlled electron-electron interactions in an In0:53Ga0:47As/InP quantum well structure (vol 150, pg 251, 2010)
    Solid State Communications, 2010, 150: 901-901.

    | 标签: 传感器

    Journal Article

    Zhou Y M, Gao K H, Yu G, Zhou W Z, Lin T, Guo S L, Chu J H, Dai N
    Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure
    Solid State Communications, 2010, 150: 251-253.

    | 标签: 传感器

    Journal Article

    Zhou W Z, Lin T, Shang L Y, Yu G, Gao K H, Zhou Y M, Wei L M, Cui L J, Zeng Y P, Guo S L, Chu J H
    Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction
    Physical Review B, 2010, 81: 195312.

    | 标签: 传感器

    Journal Article

    Zhou W, Dai X, Lin T, Xu Q, Chu J H
    Study of electricproperties for As-doped Hg1-xCdxTe multi-carrier system
    Journal of Guangxi University, 2010, 35: 821-826.

    | 标签: 传感器

    Journal Article

    Zhou W, Dai X, Lin T, Shang L, Cui L, Zeng Y, Chu J H
    Zero-field spin splitting of two-dimensional electron gas in In0.53Ga0.47As/In0.52Al0.48As quantum well
    Journal of Guangxi University, 2010, 35: 1027-1031.

    | 标签: 传感器

    Journal Article

    Zhang Z X A, Lin T E, Chu J H
    Remote sounding of atmospheric pressure profile from space, part 2: channel selection
    Journal of Applied Remote Sensing, 2010, 4: 043522.

    | 标签: 传感器

    Journal Article

    Zhang Z X, Lin T, Chu J H
    Remote sounding of atmospheric pressure profile from space, part 3: error estimation
    Journal of Applied Remote Sensing, 2010, 4: 0435360.

    | 标签: 传感器

    Journal Article

    Zhang Z L, Deng H M, Guo M, Yang P X, Chu J H
    PREPARATION AND ELECTRICAL PROPERTIES OF Bi-2 VO5.5 FERROELECTRIC THIN FILM
    Journal of Infrared and Millimeter Waves, 2010, 29: 248.

    | 标签: 传感器

    Journal Article

    Zhang T, Hu G J, Shang J L, Sun Y, Chu J H, Dai N
    Micro-Structures and Optical Properties of PbZr0.4Ti0.6O3 Multilayer Films Deposited on FTO-Coated Glass Substrate
    Journal of Infrared and Millimeter Waves, 2010, 29: 176-179.

    | 标签: 传感器

    Journal Article

    Zhang T, Hu G J, Bu H J, Wu J, Chu J H, Dai N
    Evolution of microstructure and related properties of PbZr0.4Ti0.6O3 films on F-doped tin oxide with annealing temperature
    Journal of Applied Physics, 2010, 107: 084103.

    | 标签: 传感器

    Journal Article

    Zhang J Z, Shen Y D, Li Y W, Hu Z G, Chu J H
    Composition Dependence of Microstructure, Phonon Modes, and Optical Properties in Rutile TiO2:Fe Nanocrystalline Films Prepared by a Nonhydrolytic Sol-Gel Route
    Journal of Physical Chemistry C, 2010, 114: 15157-15164.

    | 标签: 传感器

    Journal Article

    Yue F Y, Chen L, Li Y W, Hu Z G, Sun L, Yang P X, Chu J H
    Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy
    Chinese Physics B, 2010, 19: 117106.

    | 标签: 传感器

    Journal Article

    Yuan S Z, Meng X J, Sun J L, Wang J L, Liu P F, Chu J H
    A Sharp Peak of the Differential Conductivity of P(VDF-TrFe) Films Near the Coercive Field
    Ferroelectrics, 2010, 405: 133-137.

    | 标签: 传感器

    Journal Article

    Yu W L, Li W W, Wu J D, Sun J, Zhu J J, Zhu M, Hu Z G, Chu J H
    Far-Infrared-Ultraviolet Dielectric Function, Lattice Vibration, and Photoluminescence Properties of Diluted Magnetic Semiconductor Sn1-xMnxO2/c-Sapphire Nanocrystalline Films
    Journal of Physical Chemistry C, 2010, 114: 8593-8600.

    | 标签: 传感器

    Journal Article

    Yang J, Gao Y Q, Wu J, Huang Z M, Meng X J, Shen M R, Sun J L, Chu J H
    Temperature dependent optical properties of Mn doped (Pb, Sr)TiO3 ferroelectric films in absorption region: Electron-phonon interaction
    Journal of Applied Physics, 2010, 108: 114102.

    | 标签: 传感器

    Journal Article

    Wu J, Huang Z M, Hou Y, Gao Y Q, Chu J H
    Structural, electrical, and magnetic properties of Mn2.52-xCoxNi0.48O4 films
    Journal of Applied Physics, 2010, 107: 053716.

    | 标签: 传感器

    Journal Article

    Wu J, Huang Z, Hou Y, Gao Y, Chu J H
    Variation in hopping conduction across the magnetic transition in spinel Mn1.56Co0.96Ni0.48O4 films
    Applied Physics Letters, 2010, 96: 082103

    | 标签: 传感器

    Journal Article

    Wang J Q, Mao H B, Yu J G, Zhao Q, Zhang H Y, Yang P X, Zhu Z Q, Chu J H
    Electrically tunable electron g factors in coupled InAs/GaAs pyramid quantum dots
    Applied Physics Letters, 2010, 96: 062108.

    | 标签: 传感器

    Journal Article

    Wang J L, Meng X J, Gao Y Q, Huang Z M, Shen H, Sun J L, Chu J H
    Optical and Electric Properties of Poly (Vinylidene Fluoried-Trifluoroethylene) Thin Film by Langmuir-Blodgett Technique
    Journal of Infrared and Millimeter Waves, 2010, 29: 406.

    | 标签: 传感器

    Journal Article

    Wang J L, Gao Y Q, Huang Z M, Meng X J, Yuan S Z, Yang J, Sun J L, Chu J H
    The Optical Dispersion of Langmuir-Blodgett Terpolymer Films
    Ferroelectrics, 2010, 405: 120-125.

    | 标签: 传感器

    Journal Article

    Sun Y H, Lin T, Gao K H, Hu Z G, Wu H Z, Yang P X, Dai N, Chu J H
    Temperature dependent transport properties of p-Pb1-xMnxSe films
    Journal of Applied Physics, 2010, 108: 043709.

    | 标签: 传感器

    Journal Article

    Shao J, Chen L, Zha F X, Lu W, Lu X A, Guo S L, He L, Chu J H
    Modulation mechanism of infrared photoreflectance in narrow-gap HgCdTe epilayers: A pump power dependent study
    Journal of Applied Physics, 2010, 108: 023518.

    | 标签: 传感器

    Journal Article

    Shao J, Chen L, Lu W, Lu X, Zhu L Q, Guo S L, He L, Chu J H
    Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs
    Applied Physics Letters, 2010, 96: 121915.

    | 标签: 传感器

    Journal Article

    Luo M, Tang Z, Zheng J, Zhu Z Q, Chu J H
    First-principles studies of interlayer exchange coupling in (Ga, Mn)As-based diluted magnetic semiconductor multilayers
    Journal of Applied Physics, 2010, 108: 053703.

    | 标签: 传感器

    Journal Article

    Liu P F, Wang J L, Meng X J, Yang J, Dkhil B, Chu J H
    Huge electrocaloric effect in Langmuir-Blodgett ferroelectric polymer thin films
    New Journal of Physics, 2010, 12: 023035.

    | 标签: 传感器

    Journal Article

    Liu P F, Meng X J, Wang J L, Chu J H, Gemeiner P, Geiger S, Dkhil B
    Structure Change of Poly(Vinylidene Fluoride-Trifluoroethylene) Ferroelectric Thin Films on Different Electrodes
    Ferroelectrics, 2010, 405: 183-187.

    | 标签: 传感器

    Journal Article

    Li Y W, Shen Y D, Yue F Y, Hu Z G, Ma X M, Chu J H
    Preparation and characterization of BiFeO3/LaNiO3 heterostructure films grown on silicon substrate
    Journal of Crystal Growth, 2010, 312: 617-620.

    | 标签: 传感器

    Journal Article

    Li W W, Zhu J J, Wu J D, Sun J, Zhu M, Hu Z G, Chu J H
    Composition and Temperature Dependence of Electronic and Optical Properties in Manganese Doped Tin Dioxide Films on Quartz Substrates Prepared by Pulsed Laser Deposition
    Acs Applied Materials & Interfaces, 2010, 2: 2325-2332.

    | 标签: 传感器

    Journal Article

    Li W W, Zhu J J, Wu J D, Gan J, Hu Z G, Zhu M, Chu J H
    Temperature dependence of electronic transitions and optical properties in multiferroic BiFeO3 nanocrystalline film determined from transmittance spectra
    Applied Physics Letters, 2010, 97: 121102.

    | 标签: 传感器

    Journal Article

    Li W W, Yu W L, Jiang Y J, Jing C B, Zhu J Y, Zhu M, Hu Z G, Tang X D, Chu J H
    Structure, Optical, and Room-Temperature Ferromagnetic Properties of Pure and Transition-Metal-(Cr, Mn, and Ni)-Doped ZnO Nanocrystalline Films Grown by the Sol Gel Method
    Journal of Physical Chemistry C, 2010, 114: 11951-11957.

    | 标签: 传感器

    Journal Article

    Li W W, Hu Z G, Li Y W, Zhu M, Zhu Z Q, Chu J H. Growth
    Microstructure, and Infrared-Ultraviolet Optical Conductivity of La0.5Sr0.5CoO3 Nanocrystalline Films on Silicon Substrates by Pulsed Laser Deposition
    Acs Applied Materials & Interfaces, 2010, 2: 896-902.

    | 标签: 传感器

    Journal Article

    Jing C B, Zang X D, Bai W, Chu J H, Liu A Y
    Aqueous germanate ion solution promoted synthesis of worm-like crystallized Ge nanostructures under ambient conditions (vol 20, 505607, 2009)
    Nanotechnology, 2010, 21: 109801.

    | 标签: 传感器

    Journal Article

    Jing C B, Shan H Y, Zhang C J, Chu J H
    Preparation of thick GeO2 glass film with high UV photosensitivity
    Journal of Non-Crystalline Solids, 2010, 356: 2884-2888.

    | 标签: 传感器

    Journal Article

    Jing C B, Jiang Y J, Bai W, Chu J H, Liu A Y
    Synthesis of Mn-doped ZnO diluted magnetic semiconductors in the presence of ethyl acetoacetate under solvothermal conditions
    Journal of Magnetism and Magnetic Materials, 2010, 322: 2395-2400.

    | 标签: 传感器

    Journal Article

    Huang D J, Deng H M, Yang P X, Chu J H
    Optical and electrical properties of multiferroic bismuth ferrite thin films fabricated by sol-gel technique
    Materials Letters, 2010, 64: 2233-2235.

    | 标签: 传感器

    Journal Article

    Hu G J, Zhang T, Bu H J, Sun J L, Chu J H, Dai N, Zhu D M, Wu Y Z
    An abnormal dielectric relaxation phenomenon observed in PbZr(0.38)Ti(0.62)O(3) multilayers
    Journal of Applied Physics, 2010, 107: 094107.

    | 标签: 传感器

    Journal Article

    Han J Q, Wang Y P, Guo F M, Xu B, Xiong D Y, Zhou M C, Ye Y C, Zhu Z Q, Chu J H
    Electrical behavior on packaging module for the novel photoelectric sensor
    proceedings of the 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, Xiamen, China, F 20-23 Jan. 2010, 2010. IEEE.

    | 标签: 传感器

    Journal Article

    Gong S J, Sheng W, Yang Z Q, Chu J H
    First-principles investigation of bilayer graphene with intercalated C, N or O atoms
    J Phys Condens Matter, 2010, 22: 245502.

    | 标签: 传感器

    Journal Article

    Gao Y Q, Ma J H, Huang Z M, Hou Y, Wu J, Chu J H
    Effects of substrate temperature on the dielectric function of ZnO films
    Applied Physics a-Materials Science & Processing, 2010, 98: 129-134.

    | 标签: 传感器

    Journal Article

    Gao Y Q, Huang Z M, Hou Y, Wu J, Li Z Q, Chu J H
    Crystallization-dependent magnetic properties of Mn1.56Co0.96Ni0.48O4 thin films
    Applied Surface Science, 2010, 256: 2552-2556.

    | 标签: 传感器

    Journal Article

    Gao K H, Yu G, Zhou Y M, Wei L M, Lin T, Shang L Y, Sun L, Yang R, Zhou W Z, Dai N, Chu J H, Austing D G, Gu Y, Zhang Y G
    Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells
    Journal of Applied Physics, 2010, 108: 063701.

    | 标签: 传感器

    Journal Article

    Gao C, Meng X J, Sun J L, Ma J H, Lin T, Chu J H
    Ferroelectric Properties of BiFeO3 Thin Films Prepared via a Simple Chemical Solution Deposition
    Ferroelectrics, 2010, 406: 137-142.

    | 标签: 传感器

    Conference

    Chu J H
    Spin-related phenomena in nano-structure of semiconductors
    proceedings of the 3rd IEEE International Nanoelectronics Conference, Hong Kong, PEOPLES R CHINA, F Jan 03-08, 2010, 2010.

    | 标签: 传感器

    Journal Article

    Bai W, Meng X J, Lin T, Zhu X, Ma J H, Liu W J, Sun J L, Chu J H
    Magnetic field induced ferroelectric and dielectric properties in Pb(Zr0.5Ti0.5)O-3 films containing Fe3O4 nanoparticles
    Thin Solid Films, 2010, 518: 3721-3724.

    | 标签: 传感器

    Journal Article

    Bosman, M.; Zhang, Y.; Cheng, C. K.; Li, X.; Wu, X.; Pey, K. L.; Lin, C. T.; Chen, Y. W.; Hsu, S. H.; Hsu, C. H.

    The Distribution of Chemical Elements in Al- or La-Capped High-Kappa Metal Gate Stacks

    In: Applied Physics Letters, vol. 97, no. 10, pp. 3, 2010, ISSN: 0003-6951.

    Links | BibTeX 标签: 可靠性           


    @article{RN36,
    title = {The Distribution of Chemical Elements in Al- or La-Capped High-Kappa Metal Gate Stacks},
    author = {M. Bosman and Y. Zhang and C. K. Cheng and X. Li and X. Wu and K. L. Pey and C. T. Lin and Y. W. Chen and S. H. Hsu and C. H. Hsu},
    doi = {10.1063/1.3478446},
    issn = {0003-6951},
    year  = {2010},
    date = {2010-01-01},
    urldate = {2010-01-01},
    journal = {Applied Physics Letters},
    volume = {97},
    number = {10},
    pages = {3},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


    Conference

    Pey, K. L.; Raghavan, N.; Li, X.; Liu, W. H.; Shubhakar, K.; Wu, X.; Bosman, M.

    New Insight Into the TDDB and Breakdown Reliability of Novel High-Kappa Gate Dielectric Stacks

    2010 IEEE International Reliability Physics Symposium, Ieee, 2010, ISBN: 978-1-4244-5430-3.

    Abstract | Links | BibTeX 标签: 原位电镜可靠性           

    In order to achieve aggressive scaling of the equivalent oxide thickness (EOT) and simultaneously reduce leakage currents in logic devices, silicon-based oxides (SiON / SiO 2) have been replaced by physically thicker high-kappa transition metal oxide thin films by many manufacturers starting from the 45 nm technology node. CMOS process compatibility, integration and reliability are the key issues to address while introducing high-kappa at the front end. In this study, we analyze in-depth the reliability aspect of high-kappa dielectrics focusing on both the time-dependent-dielectric breakdown (TDDB) and the post breakdown evolution stage. Electrical characterization, physical failure analysis, statistical reliability modeling as well as atomistic simulations have all been used to achieve a comprehensive understanding of the physics of failure in HK and the associated microstructural defects and failure mechanisms. The role played by different gate materials ranging from poly-Si rarr FUSI rarr metal gate and different HK materials (HfO 2, HfSiON, HfZrO 4) is also investigated. Based on the results obtained, we emphasize the need and propose a few approaches of design for reliability (DFR) in high-kappa gate stacks.


       

    @conference{RN50,
    title = {New Insight Into the TDDB and Breakdown Reliability of Novel High-Kappa Gate Dielectric Stacks},
    author = {K. L. Pey and N. Raghavan and X. Li and W. H. Liu and K. Shubhakar and X. Wu and M. Bosman},
    doi = {10.1109/irps.2010.5488805},
    isbn = {978-1-4244-5430-3},
    year  = {2010},
    date = {2010-01-01},
    urldate = {2010-01-01},
    booktitle = {2010 IEEE International Reliability Physics Symposium},
    pages = {354-363},
    publisher = {Ieee},
    abstract = {In order to achieve aggressive scaling of the equivalent oxide thickness (EOT) and simultaneously reduce leakage currents in logic devices, silicon-based oxides (SiON / SiO 2) have been replaced by physically thicker high-kappa transition metal oxide thin films by many manufacturers starting from the 45 nm technology node. CMOS process compatibility, integration and reliability are the key issues to address while introducing high-kappa at the front end. In this study, we analyze in-depth the reliability aspect of high-kappa dielectrics focusing on both the time-dependent-dielectric breakdown (TDDB) and the post breakdown evolution stage. Electrical characterization, physical failure analysis, statistical reliability modeling as well as atomistic simulations have all been used to achieve a comprehensive understanding of the physics of failure in HK and the associated microstructural defects and failure mechanisms. The role played by different gate materials ranging from poly-Si rarr FUSI rarr metal gate and different HK materials (HfO 2, HfSiON, HfZrO 4) is also investigated. Based on the results obtained, we emphasize the need and propose a few approaches of design for reliability (DFR) in high-kappa gate stacks.},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }
       


       

    Journal Article

    Raghavan, N.; Pey, K. L.; Liu, W. H.; Wu, X.; Li, X. 

    Unipolar Recovery of Dielectric Breakdown in Fully Silicided High-Kappa Gate Stack Devices and its Reliability Implications

    In: Applied Physics Letters, vol. 96, no. 14, pp. 3, 2010, ISSN: 0003-6951.

    Links | BibTeX 标签: 可靠性           


    @article{RN41,
    title = {Unipolar Recovery of Dielectric Breakdown in Fully Silicided High-Kappa Gate Stack Devices and its Reliability Implications},
    author = {N. Raghavan and K. L. Pey and W. H. Liu and X. Wu and X. Li},
    doi = {10.1063/1.3374450},
    issn = {0003-6951},
    year  = {2010},
    date = {2010-01-01},
    urldate = {2010-01-01},
    journal = {Applied Physics Letters},
    volume = {96},
    number = {14},
    pages = {3},
    keywords = {可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Wu, X.; Migas, D. B.; Li, X.; Bosman, M.; Raghavan, N.; Borisenko, V. E.; Pey, K. L.
    Role of Oxygen Vacancies in HfO2-Based Gate Stack Breakdown
    In: Applied Physics Letters, vol. 96, no. 17, pp. 3, 2010, ISSN: 0003-6951. 

    Links | BibTeX 标签: 原位电镜可靠性           


    @article{RN7,
    title = {Role of Oxygen Vacancies in HfO2-Based Gate Stack Breakdown},
    author = {X. Wu and D. B. Migas and X. Li and M. Bosman and N. Raghavan and V. E. Borisenko and K. L. Pey},
    doi = {10.1063/1.3416912},
    issn = {0003-6951},
    year  = {2010},
    date = {2010-01-01},
    urldate = {2010-01-01},
    journal = {Applied Physics Letters},
    volume = {96},
    number = {17},
    pages = {3},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


    Journal Article

    Wu, X.; Pey, K. L.; Zhang, G.; Bai, P.; Li, X.; Liu, W. H.; Raghavan, N.
    Electrode Material Dependent Breakdown and Recovery in Advanced High-Kappa Gate Stacks
    In: Applied Physics Letters, vol. 96, no. 20, pp. 3, 2010, ISSN: 0003-6951. 

    Links | BibTeX 标签: 原位电镜可靠性           


    @article{RN10,
    title = {Electrode Material Dependent Breakdown and Recovery in Advanced High-Kappa Gate Stacks},
    author = {X. Wu and K. L. Pey and G. Zhang and P. Bai and X. Li and W. H. Liu and N. Raghavan},
    doi = {10.1063/1.3429682},
    issn = {0003-6951},
    year  = {2010},
    date = {2010-01-01},
    urldate = {2010-01-01},
    journal = {Applied Physics Letters},
    volume = {96},
    number = {20},
    pages = {3},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


    Conference

    Pey, K. L.; Wu, X.; Liu, W. H.; Li, X.; Raghavan, N.; Shubhakar, K.; Bosman, M.
    An Overview of Physical Analysis of Nanosize Conductive Path in Ultrathin SiON and High-Kappa Gate Dielectrics in Nanoelectronic Devices
    2010, (2010 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)).

    Links | BibTeX 标签: 原位电镜可靠性           


    @conference{RN212,
    title = {An Overview of Physical Analysis of Nanosize Conductive Path in Ultrathin SiON and High-Kappa Gate Dielectrics in Nanoelectronic Devices},
    author = {K. L. Pey and X. Wu and W. H. Liu and X. Li and N. Raghavan and K. Shubhakar and M. Bosman},
    doi = {10.1109/ipfa.2010.5531983},
    year  = {2010},
    date = {2010-01-01},
    urldate = {2010-01-01},
    journal = {2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010)},
    pages = {12 pp.-12 pp.},
    note = {2010 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {conference}
    }
       


  • 2009

    Journal Article

    Zhou Y M, Shang L Y, Yu G, Gao K H, Zhou W Z, Lin T, Guo S L, Chu J H, Dai N, Austing D G
    Transport properties of a spin-split two-dimensional electron gas in an In0.53Ga0.47As/InP quantum well structure
    Journal of Applied Physics, 2009, 106: 073722

    | 标签: 传感器

    Journal Article

    Zhang X D, Lin T, Meng X J, Sun J L, Chu J H, Park S, Kwon H, Hwang J, Park G
    Structures and Properties of PZT(52/48) Thin Films with Different Substrate Temperature and Oxygen Percentage in Mixed Ar and O-2 Gas on LNO/Si (100) by Sputtering
    Integrated Ferroelectrics, 2009, 113: 63-71.

    | 标签: 传感器

    Journal Article

    Zhang X D, Lin T, Meng X J, Sun J L, Chu J H, Park S, Kwon H, Hwang J, Park G
    Effect of Sputtering Working Pressure on Microstructures and Properties of PZT Thin Films
    Integrated Ferroelectrics, 2009, 113: 31-40.

    | 标签: 传感器

    Journal Article

    Zhan G Z, Guo F M, Li J W, Zhu Z Q, Chu J H
    An equivalent circuit model of a novel photodetector
    Infrared Physics & Technology, 2009, 52: 434-437.

    | 标签: 传感器

    Journal Article

    Yue F Y, Chen L, Wu J, Hu Z G, Li Y W, Yang P X, Chu J H
    Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra
    Chinese Physics Letters, 2009, 26: 47804.

    | 标签: 传感器

    Journal Article

    Yang J, Meng X J, Shen M R, Sun J L, Chu J H
    Effects of Mn doping on dielectric and ferroelectric properties of (Pb, Sr)TiO3 films on (111) Pt/Ti/SiO2/Si substrates
    Journal of Applied Physics, 2009, 106: 094108.

    | 标签: 传感器

    Journal Article

    Yang J, Gao Y Q, Huang Z M, Meng X J, Shen M R, Yin H, Sun J L, Chu J H
    Dielectric functions of ferroelectric Pb0.5Sr0.5TiO3 film determined by transmittance spectroscopy
    Journal of Physics D-Applied Physics, 2009, 42: 215403.

    | 标签: 传感器

    Journal Article

    Xu H S, Liu X B, Fang X R, Xie H F, Li G B, Meng X J, Sun J L, Chu J H
    Domain stabilization effect of interlayer on ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin film
    Journal of Applied Physics, 2009, 105: 034107.

    | 标签: 传感器

    Journal Article

    Wang J Q, Liu Y, Mao H B, Zhao Q, Yu J G, Zhang Y, Zhu Z Q, Chu J H
    Manipulation of spin polarization by charge polarization in GaMnN ferromagnetic resonant tunneling diode
    Applied Physics Letters, 2009, 94: 172501.

    | 标签: 传感器

    Journal Article

    Tang N, Shen B, Han K, He X W, Yin C M, Yang Z J, Qin Z X, Zhang G Y, Lin T, Zhou W Z, Shang L Y, Chu J H
    Influence of the illumination on the subband structure and occupation in Al (x) Ga1-x N/GaN heterostructures
    Applied Physics a-Materials Science & Processing, 2009, 96: 953-957.

    | 标签: 传感器

    Journal Article

    Sun L, Zhou W Z, Yu G L, Shang L Y, Gao K H, Zhou Y M, Lin T, Cui L J, Zeng Y P, Chu J H
    Strong Spin-Orbit Interactions in an InAlAs/InGaAs/InAlAs Two-Dimensional Electron Gas by Weak Antilocalization Analysis
    Japanese Journal of Applied Physics, 2009, 48: 063004.

    | 标签: 传感器

    Journal Article

    Sun L, Chu J H, Yang P-x, Yue F-y, Li Y-w, Feng C-d, Mao C-l
    Influence of substitution of Nd3+ for Bi3+ on structure and piezoelectric properties of SrBi2−xNdxNb2O9 (x=0, 0.1, 0.2 and 0.4)
    Transactions of Nonferrous Metals Society of China, 2009, 19: 1459-1463.

    | 标签: 传感器

    Journal Article

    Sun L, Chu J H, Yang P X, Feng C D
    Effects of substitutions of Nd3+ for Sr2+ on the properties of SrBi2Nb2O9 ceramics and their mechanism
    Acta Physica Sinica, 2009, 58: 5790-5797.

    | 标签: 传感器

    Journal Article

    Shen H, Gao Y H, Zhou P, Ma J H, Sun J L, Meng X J, Chu J H
    Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared on LaNiO3/Si substrates
    Journal of Applied Physics, 2009, 105: 061637.

    | 标签: 传感器

    Journal Article

    Shao J, Lu X, Guo S L, Lu W, Chen L, Wei Y F, Yang J R, He L, Chu J H
    Impurity levels and bandedge electronic structure in as-grown arsenic-doped HgCdTe by infrared photoreflectance spectroscopy
    Physical Review B, 2009, 80: 155125.

    | 标签: 传感器

    Journal Article

    Shao J, Chen L, Lu X, Lu W, He L, Guo S L, Chu J H
    Realization of photoreflectance spectroscopy in very-long wave infrared of up to 20 mu m
    Applied Physics Letters, 2009, 95: 041908.

    | 标签: 传感器

    Journal Article

    Shang J L, Hu G J, Zhang T, Sun Y, Wu J, Chu J H, Dai N
    Effect of Polyethylene Glycol Content on the Optical Properties of Ba0.9Sr0.1TiO3 Multilayers
    Journal of the American Ceramic Society, 2009, 92: 539-541.

    | 标签: 传感器

    Journal Article

    Shang J L, Hu G J, Zhang T, Sun Y, Wu J, Chu J H, Dai N
    Construction of PbZr0.4Ti0.6O3- and Ba0.9Sr0.1TiO3-Based Optical Microcavities by Chemical Solution Deposition
    Journal of the American Ceramic Society, 2009, 92: 2159-2161.

    | 标签: 传感器

    Journal Article

    Qin J, Huang Z, Ge Y, Hou Y, Chu J H
    Tandem demodulation lock-in amplifier based on digital signal processor for dual-modulated spectroscopy
    Rev Sci Instrum, 2009, 80: 033112.

    | 标签: 传感器

    Journal Article

    Miao F J, Zhang J, Xu S H, Wang L W, Chu J H, Cao Z S, Zhan P, Wang Z L
    An Array of One-Dimensional Porous Silicon Photonic Crystal Reflector Islands for a Far-Infrared Image Detector
    Chinese Physics Letters, 2009, 26: 044207.

    | 标签: 传感器

    Journal Article

    Meng X-j, Han L, Sun J-l, Chu J H
    Stable pyroelectric coefficient induced from self-polarization in sol-gel derived 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 thin films
    Infrared Laser Engineering, 2009, 38: 961-965, 1019.

    | 标签: 传感器

    Journal Article

    Meng X J, Wang J L, Xu H S, Sun J L, Chu J H
    The effect of ac field amplitude on the relaxor behaviors in Langmuir-Blodgett terpolymer films
    Journal of Applied Physics, 2009, 106: 114106.

    | 标签: 传感器

    Journal Article

    Meng X J, Dkhil B, Liu P F, Wang J L, Sun J L, Chu J H
    Threshold fields in the dc bias dependence of dielectric responses of relaxor ferroelectric terpolymer films
    Journal of Applied Physics, 2009, 106: 104102

    | 标签: 传感器

    Journal Article

    Liu Z P, Deng H M, Yang P X, Chu J H
    Enhanced ferroelectric properties of Fe-doped BaTiO3 thin film deposited on LaNiO3/Si substrate by sol-gel technique
    Materials Letters, 2009, 63: 2622-2624.

    | 标签: 传感器

    Journal Article

    Liu P F, Wang J L, Tian L, Meng X J, Chu J H
    Electric Characteristics of Langmuir-Blodgett Ferroelectric Polymers Film: High Pyroelectric Coefficient and Low Dielectric Constant
    Journal of Infrared and Millimeter Waves, 2009, 28: 401.

    | 标签: 传感器

    Journal Article

    Liu P F, Meng X J, Chu J H, Geneste G, Dkhil B
    Effect of in-plane misfit strains on dielectric and pyroelectric response of poly (vinylidene fluoride-trifluoroethylene) ferroelectric polymer
    Journal of Applied Physics, 2009, 105: 114105.

    | 标签: 传感器

    Journal Article

    Liu P F, Gemeiner P, Shen H, Meng X J, Chu J H, Geiger S, Guiblin N, Dkhil B
    Structural and dielectric properties of ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films with different bottom electrodes
    Journal of Applied Physics, 2009, 106: 054111.

    | 标签: 传感器

    Journal Article

    Liu P F, Gemeiner P, Meng X J, Chu J H, Geiger S, Dkhil B
    The Debye-like relaxation mechanism in poly(vinylidene fluoride-trifluoroethylene) ferroelectric polymers
    Journal of Applied Physics, 2009, 106: 104113.

    | 标签: 传感器

    Journal Article

    Li Y W, Shen Y D, Hu Z G, Yue F Y, Chu J H
    Effect of thickness on the dielectric property and nonlinear current-voltage behavior of CaCu3Ti4O12 thin films
    Physics Letters A, 2009, 373: 2389-2392.

    | 标签: 传感器

    Journal Article

    Li Y W, Hu Z G, Yue F Y, Zhou W Z, Yang P X, Chu J H
    Effects of deposition temperature and post-annealing on structure and electrical properties in (La0.5Sr0.5)CoO3 films grown on silicon substrate
    Applied Physics a-Materials Science & Processing, 2009, 95: 721-725.

    | 标签: 传感器

    Journal Article

    Li W W, Li Y W, Hu Z G, Zhu Z Q, Chu J H
    STUDY ON THE SPECTROSCOPIC ELLIPSOMETRY OF La0.5Sr0.5CoO3 FILMS PREPARED AT DIFFERENT SUBSTRATE TEMPERATURES
    Journal of Infrared and Millimeter Waves, 2009, 28: 410-413.

    | 标签: 传感器

    Journal Article

    Li W W, Hu Z G, Wu J D, Sun J, Zhu M, Zhu Z Q, Chu J H
    Concentration Dependence of Optical Properties in Arsenic-Doped ZnO Nanocrystalline Films Grown on Silicon (100) Substrates by Pulsed Laser Deposition
    Journal of Physical Chemistry C, 2009, 113: 18347-18352.

    | 标签: 传感器

    Journal Article

    Kong J, Deng H M, Yang P X, Chu J H
    Synthesis and properties of pure and antimony-doped tin dioxide thin films fabricated by sol-gel technique on silicon wafer
    Materials Chemistry and Physics, 2009, 114: 854-859.

    | 标签: 传感器

    Journal Article

    Jing C B, Xu X G, Zhang X L, Liu Z B, Chu J H
    In situ synthesis and third-order nonlinear optical properties of CdS/PVP nanocomposite films
    Journal of Physics D-Applied Physics, 2009, 42: 075402.

    | 标签: 传感器

    Journal Article

    Jing C B, Shan H Y, Zhang C J, Zang X D, Bai W, Chu J H
    Aqueous germanate solution, alternative sol-gel precursor for preparation of Mn (x) Ge1-x diluted magnetic semiconductors
    Journal of Sol-Gel Science and Technology, 2009, 51: 139-145.

    | 标签: 传感器

    Journal Article

    Jing C, Zhang C, Zang X, Zhou W, Bai W, Lin T, Chu J H
    Fabrication and characteristics of porous germanium films
    Sci Technol Adv Mater, 2009, 10: 065001.

    | 标签: 传感器

    Journal Article

    Jing C, Zang X, Bai W, Chu J H, Liu A
    Aqueous germanate ion solution promoted synthesis of worm-like crystallized Ge nanostructures under ambient conditions
    Nanotechnology, 2009, 20: 505607.

    | 标签: 传感器

    Journal Article

    Hu Z G, Li W W, Li Y W, Zhu M, Zhu Z Q, Chu J H
    Electronic properties of nanocrystalline LaNiO3 and La0.5Sr0.5CoO3 conductive films grown on silicon substrates determined by infrared to ultraviolet reflectance spectra
    Applied Physics Letters, 2009, 94: 221104.

    | 标签: 传感器

    Journal Article

    Hu G J, Zhang T, Sun J L, Zhu D M, Chu J H, Dai N
    Dielectric relaxation associated with dipolar defect complex in PbZrxTi1-xO3 multilayer
    Journal of Infrared and Millimeter Waves, 2009, 28: 321.

    | 标签: 传感器

    Journal Article

    Guo M, Meng X J, Yang P X, Chu J H
    SYNTHESIS AND CHARACTERIZATION OF Bi2Cu0.1V0.9O5.35-delta SOLID ELECTROLYTE VIA CHEMICAL SOLUTION PROCESS
    Journal of Infrared and Millimeter Waves, 2009, 28: 259-262.

    | 标签: 传感器

    Journal Article

    Guo M, Deng H M, Yang P X, Chu J H
    The influence of annealing temperatures on the properties of Bi2VO5.5/LaNiO3/Si thin films
    Materials Letters, 2009, 63: 1535-1537.

    | 标签: 传感器

    Journal Article

    Guo F M, Zhan G Z, Han J Q, Xu B, Zhou X L, Li J W, Xiong D Y, Ye Y C, Wang Y P, Wang X H, Chu J H
    Dumping design of CTIA readout circuit based on a low-dimensional quantum structure photoelectric sensor
    Proceedings of the SPIE - The International Society for Optical Engineering, 2009, 7383: 73834Z.

    | 标签: 传感器

    Journal Article

    Gao Y Q, Huang Z M, Hou Y, Wu J, Ge Y J, Chu J H
    Optical properties of Mn1.56Co0.96Ni0.48O4 films studied by spectroscopic ellipsometry
    Applied Physics Letters, 2009, 94: 011106.

    | 标签: 传感器

    Journal Article

    Gao K H, Zhou W Z, Zhou Y M, Yu G, Lin T, Guo S L, Chu J H, Dai N, Gu Y, Zhang Y G
    Austing D G. Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well
    Applied Physics Letters, 2009, 94: 152107.

    | 标签: 传感器

    Journal Article

    Gao K H, Yu G, Zhou Y M, Zhou W Z, Lin T, Chu J H, Dai N
    SpringThorpe A J, Austing D G. Transport properties of AlGaAs/GaAs parabolic quantum wells
    Journal of Applied Physics, 2009, 105: 013712

    | 标签: 传感器

    Journal Article

    Gao K H, Yu G, Zhou Y M, Zhou W Z, Lin T, Chu J H, Dai N, Austing D G, Gu Y, Zhang Y G
    Experimental study of weak antilocalization effects in a two-dimensional system: Anomalous dephasing rate
    Physical Review B, 2009, 79: 085310.

    | 标签: 传感器

    Journal Article

    Bai W, Meng X J, Zhu X, Jing C B, Gao C, Chu J H
    Shape-tuned synthesis of dispersed magnetite submicro particles with good magnetic properties
    Physica E-Low-Dimensional Systems & Nanostructures, 2009, 42: 141-145.

    | 标签: 传感器

    Conference

    Bai W, Meng X J, Yang J, Lin T, Zhang Q X, Ma J H, Sun J L, Chu J H
    Magnetoelectric, pinning and depinning properties in Pb(Zr0.5Ti0.5)O-3/Fe3O4 composite films
    Journal of Physics D-Applied Physics, 2009, 42: 145008.

    | 标签: 传感器

    Journal Article

    Bai W, Meng X J, Lin T, Tian L, Jing C B, Liu W J, Ma J H, Sun J L, Chu J H
    Effect of Fe-doping concentration on microstructure, electrical, and magnetic properties of Pb(Zr0.5Ti0.5)O-3 thin films prepared by chemical solution deposition
    Journal of Applied Physics, 2009, 106: 124908.

    | 标签: 传感器

  • 2008

    Journal Article

    Zhou W Z, Lin T, Shang L Y, Sun L, Gao K H, Zhou Y M, Yu G, Tang N, Han K, Shen B, Guo S L, Gui Y S, Chu J H
    Weak antilocalization and beating pattern in high electron mobility AlxGa1-xN/GaN two-dimensional electron gas with strong Rashba spin-orbit coupling
    Journal of Applied Physics, 2008, 104: 053703

    | 标签: 传感器

    Journal Article

    Zhou W Z, Lin T, Shang L Y, Sun L, Gao K H, Zhou Y M, Yu G, Tang N, Han K, Shen B, Guo S L, Gui Y S, Chu J H
    Influence of the illumination on weak antilocalization in an AlxGa1-xN/GaN heterostructure with strong spin-orbit coupling
    Applied Physics Letters, 2008, 93: 262104.

    | 标签: 传感器

    Journal Article

    Zhao X Y, Liu S J, Chu J H, Dai N, Hu G J
    Ferroelectric and optical properties of Pb(ZrxTi1-x)O-3 bilayers
    Acta Physica Sinica, 2008, 57: 5968-5972.

    | 标签: 传感器

    Journal Article

    Zhang X D, Meng X J, Sun J L, Lin T, Ma J H, Chu J H, Wang N, Dho J
    The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing
    Journal of Materials Research, 2008, 23: 2846-2853.

    | 标签: 传感器

    Journal Article

    Zhang X D, Meng X J, Sun J L, Lin T, Ma J H, Chu J H, Kwon D Y, Kim C W, Kim B G
    Preparation of LaNiO3 thin films with very low room-temperature electrical resistivity by room temperature sputtering and high oxygen-pressure processing
    Thin Solid Films, 2008, 516: 919-924.

    | 标签: 传感器

    Journal Article

    Zhang X D, Meng X J, Sun J L, Lin T, Ma J H, Chu J H, Kwon D Y, Kim B G
    Low-temperature preparation of sputter-deposited Pb(Zr0.52Ti0.48)O-3 thin films through high oxygen-pressure annealing
    Journal of Crystal Growth, 2008, 310: 783-787.

    | 标签: 传感器

    Journal Article

    Zhang X D, Meng X J, Sun J L, Lin T, Ma J H, Chu J H, Dho J H
    Low-temperature crystallization of PbZr0.3Ti0.7O3 film induced by high-oxygen-pressure processing
    Japanese Journal of Applied Physics, 2008, 47: 7523-7526.

    | 标签: 传感器

    Conference

    Zhan G Z, Guo F M, Lei W, Huang J, Zhu Z Q, Chu J H
    A specific architectures of CMOS readout for resonant-cavity-enhanced devices
    proceedings of the Progress in Electromagnetics Research Symposium (PIERS 2008), Hangzhou, PEOPLES R CHINA, F Mar 24-28, 2008, 2008.

    | 标签: 传感器

    Journal Article

    Yue F Y, Wu J, Chu J H
    Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra
    Applied Physics Letters, 2008, 93: 131909.

    | 标签: 传感器

    Journal Article

    Yue F Y, Chu J H, Wu J, Hu Z G, Li Y W, Yang P X
    Modulated photoluminescence of shallow levels in arsenic-doped Hg(1-x)Cd(x)Te (x approximate to 0.3) grown by molecular beam epitaxy
    Applied Physics Letters, 2008, 92: 121916.

    | 标签: 传感器

    Journal Article

    Yu P, Wang F F, Zhou D, Ge W W, Zhao X Y, Luo H S, Sun J L, Meng X J, Chu J H
    Growth and pyroelectric properties of high Curie temperature relaxor-based ferroelectric Pb(In(1/2)Nb(1/2))O(3)-Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) ternary single crystal
    Applied Physics Letters, 2008, 92: 252907.

    | 标签: 传感器

    Journal Article

    Yu J, Chu J H
    Progress and prospect for high temperature single-phased magnetic ferroelectrics
    Chinese Science Bulletin, 2008, 53: 2097-2112.

    | 标签: 传感器

    Journal Article

    Yu G, Dai N, Chu J H, Poole P J, Studenikin S A
    Experimental study of the spin-orbit quantum interference effect in a high-mobility In(x)Ga(1-x)As/InP quantum well structure with strong spin-orbit interaction
    Physical Review B, 2008, 78: 035304.

    | 标签: 传感器

    Journal Article

    Yang J, Meng X J, Shen M R, Gao C, Sun J L, Chu J H
    Evolution of electric field amplitude dependent scaling behaviors in ferroelectric films over a broad temperature range
    Applied Physics Letters, 2008, 93: 092908.

    | 标签: 传感器

    Journal Article

    Yang J, Meng X J, Shen M R, Fang L, Wang J L, Lin T, Sun J L, Chu J H
    Hopping conduction and low-frequency dielectric relaxation in 5 mol % Mn doped (Pb,Sr)TiO3 films
    Journal of Applied Physics, 2008, 104: 104113.

    | 标签: 传感器

    Journal Article


    Xia L, Chu J H, Longxia L, Ning D, Fujia Z
    Investigation of room temperature nuclear radiation CdZnTe pixel array detector
    Journal of Optoelectronics·Laser, 2008, 19: 751-753.

    | 标签: 传感器

    Journal Article

    Wei L, Fangmin G, Dapeng H, Ziqiang Z, Chu J H
    Simulation and Optimizing for Heterostructure of InGaAs/InP Avalanche Photo-detectors
    Laser and Infrared, 2008, 38: 1000-1003.

    | 标签: 传感器

    Journal Article

    Wei J Z, Shen X Y, Ding G H, Huang Z M, Zhao L, Zhou Y, Chu J H
    Infrared spectrums and temporal curve of Indirect moxibustion with common monkshood cake
    Journal of Infrared and Millimeter Waves, 2008, 27: 247-251.

    | 标签: 传感器

    Journal Article

    Wang J L, Meng X J, Yuan S Z, Yang J, Sun J L, Xu H S, Chu J H
    High electric tunability of relaxor ferroelectric Langmuir-Blodgett terpolymer films
    Applied Physics Letters, 2008, 93: 192905.

    | 标签: 传感器

    Journal Article

    Tang N, Shen B, He X W, Han K, Tang Y Q, Yang Z J, Qin Z X, Zhang G Y, Lin T, Zhu B, Zhou W Z, Shang L Y, Chu J H
    Influence of the illumination on the spin splitting of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
    Physica Status Solidi C - Current Topics in Solid State Physics, 2008, 5: 2339.

    | 标签: 传感器

    Conference

    Tang N, Shen B, Han K, Yang Z-J, Qin Z-X, Zhang G-Y, Lin T, Zhou W-Z, Shang L-Y, Chu J H, Huang R
    Magnetotransport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures under illumination
    proceedings of the 9th International Conference on Solid-State and Integrated-Circuit Technology, Beijing, PEOPLES R CHINA, F Oct 20-23, 2008, 2008. IEEE.

    | 标签: 传感器

    Journal Article

    Shao J, Ma L L, Lu X, Wu J, Li Z F, Guo S L, He L, Lu W, Chu J H
    Recent progress and potential impact of modulation spectroscopy for narrow-gap HgCdTe
    Journal of Infrared and Millimeter Waves, 2008, 27: 1.

    | 标签: 传感器

    Journal Article

    Shao J, Ma L L, Lu X, Lu W, Wu J, Zha F X, Wei Y F, Li Z F, Guo S L, Yang J R, He L, Chu J H
    Evolution of infrared photoreflectance lineshape with temperature in narrow-gap HgCdTe epilayers
    Applied Physics Letters, 2008, 93: 131914.

    | 标签: 传感器

    Journal Article

    Shang L-Y, Yu G-L, Lin T, Zhou W-Z, Guo S-L, Dai N, Chu J H
    Spin splitting in In(0).(53)Ga(0.47)As/InP heterostructures
    Chinese Physics Letters, 2008, 25: 2194-2197.

    | 标签: 传感器

    Journal Article

    Shang L Y, Lin T, Zhou W Z, Li D L, Gao H L, Zeng Y P, Guo S L, Yu G L, Chu J H
    Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well
    Acta Physica Sinica, 2008, 57: 5232-5236.

    | 标签: 传感器

    Journal Article

    Shang L Y, Lin T, Zhou W Z, Guo S L, Li D L, Gao H L, Cui L J, Zeng Y P, Chu J H
    Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands
    Acta Physica Sinica, 2008, 57: 3818-3822.

    | 标签: 传感器

    Conference

    Qin J H, Ma J H, Huang Z M, Chu J H
    Voltage-controlled change of MIS reflectivity in visible and near infrared band
    proceedings of the Thin Film Physics and Applications, Sixth International Conference, Shanghai, PEOPLES R CHINA, F Sep 25-28, 2007, 2008.

    | 标签: 传感器

    Conference

    Qin J H, Ma J H, Huang Z M, Chu J H
    Voltage-controlled change of MIS reflectivity in visible and near infrared band
    proceedings of the Thin Film Physics and Applications, Sixth International Conference, Shanghai, PEOPLES R CHINA, F Sep 25-28, 2007, 2008.

    | 标签: 传感器

    Conference

    Qin J H, Ma J H, Huang Z M, Chu J H
    Study on a novel optical readout ferroelectric device based on MIS for uncooled infrared imaging
    proceedings of the Conference on Advanced Materials and Devices for Sensing and Imaging III, Beijing, PEOPLES R CHINA, F Nov 12-14, 2007, 2008.

    | 标签: 传感器

    Conference

    Qin J, Huang Z, Hou Y, Chu J H, Zhang D H
    Dual-modulated and dual-light-path spectrometer for modulated reflectance measurement
    proceedings of the IEEE Photonics Global, Singapore FDec 08-11, 2008, 2008.

    | 标签: 传感器

    Conference

    Miao F, Zhang J, Xu S, Wang L, Chu J H, Cao Z, Zhan P, Wang Z
    Fabrication of a reflective mirror within wide incidence angles for mid-infrared wavelength
    proceedings of the International Workshop on Metamaterials Nanjing, PEOPLES R CHINA, F Nov 09-12, 2008, 2008. IEEE AP-MTT-EMC.

    | 标签: 传感器

    Journal Article

    Meng X J, Kliem H, Lin T, Chu J H
    Low-temperature dielectric properties of Langmuir-Blodgett ferroelectric polymer films
    Journal of Applied Physics, 2008, 103: 034110.

    | 标签: 传感器

    Journal Article

    Ma J H, Sun J L, Qin J H, Gao Y H, Lin T, Shen H, Shi F W, Meng X J, Chu J H, Liu S J, Li J
    Electron injection of SrTiO(3)/Si interfacial layer
    Applied Physics Letters, 2008, 93: 102903

    | 标签: 传感器

    Conference

    Ma J H, Pin J H, Huang Z M, Gao Y H, Lin T, Shi F W, Sun J L, Chu J H
    Highly (h00) oriented growth of SrTiO3 thin films on Si(100) substrates by RF magnetron sputtering and their optical properties
    proceedings of the 6th International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 25-28, 2007, 2008.

    | 标签: 传感器

    Journal Article

    Li-Yan S, Tie L, Wen-Zheng Z, Zhi-Ming H, Dong-Lin L, Hong-Ling G, Li-Jie C, Yi-Ping Z, Shao-Ling G, Chu J H
    Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands
    Acta Physica Sinica, 2008, 57: 2481-2485.

    | 标签: 传感器

    Conference

    Liu P F, Meng X J, Sun J L, Ma J H, Chu J H
    Phase diagrams and in-plane anisotropic misfit strains of (110) Ba0.6Sr0.4TiO3 thin films grown on (001) orthorhombic NdGaO3 substrate
    proceedings of the 6th International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 25-28, 2007, 2008.

    | 标签: 传感器

    Journal Article

    Liu A Y, Xue J Q, Meng X J, Sun J L, Huang Z M, Chu J H
    Infrared optical properties of Ba(Zr0.20Ti0.80)O-3 and Ba(Zr0.30Ti0.70)O-3 thin films prepared by sol-gel method
    Applied Surface Science, 2008, 254: 5660-5663.

    | 标签: 传感器

    Journal Article

    Li Y W, Hu Z G, Yue F Y, Yang P X, Qian Y N, Cheng W J, Ma X M, Chu J H
    Oxygen-vacancy-related dielectric relaxation in BiFeO3 films grown by pulsed laser deposition
    Journal of Physics D-Applied Physics, 2008, 41: 215403.

    | 标签: 传感器

    Journal Article

    Li Y W, Hu Z G, Sun J L, Meng X J, Chu J H
    Preparation and properties of CaCu3Ti4O12 thin film grown on LaNiO3-coated silicon by sol-gel process
    Journal of Crystal Growth, 2008, 310: 378-381.

    | 标签: 传感器

    Journal Article

    Li Y W, Hu Z G, Sun J L, Meng X J, Chu J H
    Effects of LaNiO3 bottom electrode on structural and dielectric properties of CaCu3Ti4O12 films fabricated by sol-gel method
    Applied Physics Letters, 2008, 92: 042901.

    | 标签: 传感器

    Journal Article

    Li X, Chu J H, Li L, Dai N, Sun J, Zhang f
    Development of room temperature CdZnTe nuclear radiation detector
    Semiconductor Technology, 2008, 33: 941-946.

    | 标签: 传感器

    Journal Article

    Lei W, Guo F M, Lu W, Xiong D Y, Zhu Z Q, Chu J H
    Based Simulation of High Gain and Low Breakdown Voltage InGaAs/InP Avalanche Photodiode
    proceedings of the 8th International Conference on Numerical Simulation of Optoelectronic Devices Nottingham, ENGLAND, F Sep 01-04, 2008, 2008 IEEE Lasers & Electro Opt Soc.

    | 标签: 传感器

    Journal Article

    Hu Z G, Li Y W, Zhu M, Zhu Z Q, Chu J H
    Structure and optical properties of ferroelectric PbZr0.40Ti0.60O3 films grown on LaNiO3-coated platinized silicon determined by infrared spectroscopic ellipsometry
    Journal of Physical Chemistry C, 2008, 112: 9737-9743.

    | 标签: 传感器

    Journal Article

    Hu Z G, Li Y W, Zhu M, Zhu Z Q, Chu J H
    Microstructural and optical investigations of sol-gel derived ferroelectric BaTiO3 nanocrystalline films determined by spectroscopic ellipsometry
    Physics Letters A, 2008, 372: 4521-4526.

    | 标签: 传感器

    Journal Article

    Hu Z G, Li Y W, Zhu M, Zhu Z Q, Chu J H
    Composition dependence of dielectric function in ferroelectric BaCo(x)Ti(1-x)O(3) films grown on quartz substrates by transmittance spectra
    Applied Physics Letters, 2008, 92: 081904

    | 标签: 传感器

    Journal Article

    Hu Z G, Li Y W, Zhu M, Yue F Y, Zhu Z Q, Chu J H
    Growth and ellipsometric characterizations of highly (111)-oriented Bi2Ti2O7 films on platinized silicon by metal organic decomposition method
    Journal of Vacuum Science & Technology A, 2008, 26: 1287-1292.

    | 标签: 传感器

    Journal Article

    Hu Z G, Li W W, Wu J D, Sun J, Shu Q W, Zhong X X, Zhu Z Q, Chu J H
    Optical properties of pulsed laser deposited rutile titanium dioxide films on quartz substrates determined by Raman scattering and transmittance spectra
    Applied Physics Letters, 2008, 93: 181910.

    | 标签: 传感器

    Journal Article

    Hu G J, Shang J L, Zhang T, Xie J, Sun J L, Chu J H, Dai N
    Ferroelectric and dielectric properties of lead zirconate titanate multilayers
    Journal of Infrared and Millimeter Waves, 2008, 27: 169.

    | 标签: 传感器

    Journal Article

    Hou Y, Xue J Q, Huang Z M, Li T X, Ge Y J, Chu J H
    Structure-related optical properties of Bi4-xLaxTi3O12 thin films grown on Pt/Ti/SiO2/Si substrate
    Thin Solid Films, 2008, 517: 901-904.

    | 标签: 传感器

    Journal Article

    Hou Y, Huang Z M, Gao Y Q, Ge Y J, Wu J, Chu J H
    Characterization of Mn(1.56)Co(0.96)Ni(0.48)O(4) films for infrared detection
    Applied Physics Letters, 2008, 92: 202115.

    | 标签: 传感器

    Journal Article

    Ge Y J, Huang Z M, Hou Y, Qin J H, Li T X, Chu J H
    Low temperature growth of manganese cobalt nickelate films by chemical deposition
    Thin Solid Films, 2008, 516: 5931-5934.

    | 标签: 传感器

    Journal Article

    Ge Y J, Huang Z M, Hou Y, Qin J H, Li T X, Chu J H
    Infrared Spectroscopic Elliposimetry and Crystallization of Manganese Cobalt Nickelate Films Prepared by Chemical Deposition at Low Temperature
    Journal of Infrared and Millimeter Waves, 2008, 27: 413-416.

    | 标签: 传感器

    Journal Article

    Ge Y, Huang Z, Hou Y, Li T, Chu J H
    Crystallization of manganese cobalt nickelate films prepared by chemical deposition
    proceedings of the 6th International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F Sep 25-28, 2007, 2008.

    | 标签: 传感器

    Journal Article

    Gao Y H, Sun J L, Ma J H, Meng X J, Chu J H
    Improved dielectric and electrical properties of (Ba,Sr)TiO3 thin films using Pt/LaNiO3 as the top-electrode material
    Applied Physics a-Materials Science & Processing, 2008, 91: 541-544.

    | 标签: 传感器

    Conference

    Gao Y H, Ma J H, Sun J L, Meng X J, Chu J H
    Growth of highly (h00) oriented barium strontium titanate films on silicon substrates using conducting LaNiO3 electrode
    proceedings of the Sixth International Conference on Thin Film Physics and Applications, F, 2008 SPIE.

    | 标签: 传感器

    Journal Article

    Duan C G, Velev J P, Sabirianov R F, Zhu Z, Chu J H, Jaswal S S, Tsymbal E Y
    Surface magnetoelectric effect in ferromagnetic metal films
    Phys Rev Lett, 2008, 101: 137201.

    | 标签: 传感器

    Journal Article

    Chu J H
    Technical development of ferroelectric thin film uncooled infrared detector
    Infrared Laser Engineering, 2008, 37: 9-13.

    | 标签: 传感器

    Journal Article

    Bai W, Zhu X, Zhu Z Q, Chu J H
    Synthesis of zinc oxide nanosheet thin films and their improved field emission and photoluminescence properties by annealing processing
    Applied Surface Science, 2008, 254: 6483-6488.

    | 标签: 传感器

    Journal Article

    Wu, X.; Uchikoshi, J.; Hirokane, T.; Yamada, R.; Takeuchi, A.; Arima, K.; Morita, M.
    Characterization of Pinhole in Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Transmission Microscopy 
    In: Journal of the Electrochemical Society, vol. 155, no. 11, pp. H864-H868, 2008, ISSN: 0013-4651.

    Abstract | Links | BibTeX 标签: 原位电镜可靠性           

    Patterned oxides buried in bonded silicon-on-insulator (SOI) wafers before thinning have been characterized by near-IR scattering topography and a microscopy combination system. Micron-scaled pinholes in patterned oxides buried in bonded SOI wafers have been observed by the scattering topography. Edges of the patterned oxides have also been observed by both scattering topography and transmission microscopy. With the combination of scattering topography and transmission and reflection microscopy, this system is effective to evaluate the visibility of patterned oxides buried in bonded SOI wafers. (C) 2008 The Electrochemical Society.

    doi:10.1149/1.2971178           


    @article{RN9,
    title = {Characterization of Pinhole in Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Transmission Microscopy},
    author = {X. Wu and J. Uchikoshi and T. Hirokane and R. Yamada and A. Takeuchi and K. Arima and M. Morita},
    doi = {10.1149/1.2971178},
    issn = {0013-4651},
    year  = {2008},
    date = {2008-01-01},
    urldate = {2008-01-01},
    journal = {Journal of the Electrochemical Society},
    volume = {155},
    number = {11},
    pages = {H864-H868},
    abstract = {Patterned oxides buried in bonded silicon-on-insulator (SOI) wafers before thinning have been characterized by near-IR scattering topography and a microscopy combination system. Micron-scaled pinholes in patterned oxides buried in bonded SOI wafers have been observed by the scattering topography. Edges of the patterned oxides have also been observed by both scattering topography and transmission microscopy. With the combination of scattering topography and transmission and reflection microscopy, this system is effective to evaluate the visibility of patterned oxides buried in bonded SOI wafers. (C) 2008 The Electrochemical Society.},
    keywords = {原位电镜, 可靠性},
    pubstate = {published},
    tppubtype = {article}
    }


  • 2007

    Journal Article

    Zhou W-Z, Lin T, Shang L-Y, Huang Z-M, Cui L-J, Li D-L, Gao H-L, Zeng Y-P, Guo S-L, Gui Y-S, Chu J H
    Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems
    Acta Physica Sinica, 2007, 56: 4099-4104.

    | 标签: 传感器

    Journal Article

    Zhou W Z, Lin T, Shang L Y, Yu G, Huang Z M, Guo S L, Gui Y S, Dai N, Chu J H, Cui L J, Li D L, Gao H L, Zeng Y P
    Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well
    Solid State Communications, 2007, 143: 300-303.

    | 标签: 传感器

    Journal Article

    Zhou W Z, Lin T, Shang L Y, Huang Z M, Zhu B, Cui L J, Gao H L, Li D L, Guo S L, Gui Y S, Chu J H
    Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers
    Acta Physica Sinica, 2007, 56: 4143-4147.

    | 标签: 传感器

    Journal Article

    Zhou W Z, Huang Z M, Qiu Z J, Lin T, Shang L Y, Li D L, Gao H L, Cui L J, Zeng Y P, Guo S L, Gui Y S, Dai N, Chu J H
    Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well
    Solid State Communications, 2007, 142: 393-397.

    | 标签: 传感器

    Journal Article

    Yue F Y, Shao J, Wei Y F, Lu X A, Wei H A, Yang J R, Chu J H
    Temperature-dependent absorption spectra investigation of shallow levels in HgCdTe grown by liquid phase epitaxy
    Acta Physica Sinica, 2007, 56: 2878-2881.

    | 标签: 传感器

    Journal Article

    Yang J, Chu J H, Shen M R
    Analysis of diffuse phase transition and relaxorlike behaviors in Pb0.5Sr0.5TiO3 films through dc electric-field dependence of dielectric response
    Applied Physics Letters, 2007, 90: 242908.

    | 标签: 传感器

    Journal Article

    Wang G S, Zhang Y Y, Mao C L, Dong X L, Chu J H
    Composition dependence of structural and optical properties for sol-gel derived (100)-oriented Ba1-xSrxTiO3 thin films
    Applied Physics Letters, 2007, 91: 061104.

    | 标签: 传感器

    Journal Article

    Wan L, Li Y W, Meng X J, Sun J L, Yuan X Z, Shangguan J, Chu J H
    Observation of antiphase domains in BiFeO3 thin films by X-ray diffraction
    Physica B-Condensed Matter, 2007, 391: 124-129.

    | 标签: 传感器

    Journal Article

    Tang N, Shen B, He X W, Han K, Yang Z J, Qin Z X, Zhang G Y, Lin T, Zhu B, Zhou W Z, Shang L Y, Chu J H
    Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in AlxGa1-xN/GaN heterostructures
    Physical Review B, 2007, 76: 155303.

    | 标签: 传感器

    Journal Article

    Sun L, Chu J H, Feng C, Chen L
    Analysis of relaxor mechanism and structural distortion for SrBi1.6Nd0.4Nb2O9 bismuth-layer-structured ceramics
    Applied Physics Letters, 2007, 91: 242902.

    | 标签: 传感器

    Journal Article

    Shao J, Yue F Y, Lu X, Lu W, Huang W, Li Z F, Guo S L, Chu J H
    Photomodulated infrared spectroscopy by a step-scan Fourier transform infrared spectrometer (vol 89, pg 182121, 2006)
    Applied Physics Letters, 2007, 90: 079902.

    | 标签: 传感器

    Journal Article

    Shao J, Lu X, Lu W, Yue F Y, Huang W, Li N, Wu J, He L, Chu J H
    Cutoff wavelength of Hg1-xCdxTe epilayers by infrared photoreflectance spectroscopy
    Applied Physics Letters, 2007, 90: 171101.

    | 标签: 传感器

    Journal Article

    Shao J, Lu W, Yue F, Lu X, Huang W, Li Z, Guo S, Chu J H
    Photoreflectance spectroscopy with a step-scan Fourier-transform infrared spectrometer: technique and applications
    Rev Sci Instrum, 2007, 78: 013111.

    | 标签: 传感器

    Journal Article

    Shao J, Lu W, Lu X, Yue F Y, Li Z F, Guo S L, Chu J H
    Modulated photoluminescence spectroscopy with a step-scan Fourier transform infrared spectrometer (vo 77, art no 063104, 2006)
    Review of Scientific Instruments, 2007, 78: 029901.

    | 标签: 传感器

    Journal Article

    Meng X J, Remiens D, Detalle M, Dkhil B, Sun J L, Chu J H
    Critical temperatures of 70%Pb(Mg1/3Nb2/3)O-3-30%PbTiO3 thin films investigated by dielectric, ferroelectric, and structural measurements
    Applied Physics Letters, 2007, 90: 132904.

    | 标签: 传感器

    Journal Article

    Meng X J, Kliem H, Lin T, Chu J H
    Electric field induced conversion in the nature of the phase transition from the first order to the second order for Langmuir-Boldgett polymer films
    Applied Physics Letters, 2007, 91: 102903.

    | 标签: 传感器

    Journal Article

    Ma J H, Meng X J, Sun J L, Xue J Q, Hu Z G, Shi F W, Lin T, Chu J H
    Structural and optical properties of Bi3.25Nd0.75Ti3O12 ferroelectric thin films
    Applied Physics a-Materials Science & Processing, 2007, 88: 439-442.

    | 标签: 传感器

    Journal Article

    Lu X, Chu J H
    Lattice thermal conductivity in a Si/Ge/Si heterostructure
    Journal of Applied Physics, 2007, 101: 114323.

    | 标签: 传感器

    Journal Article

    Liu A Y, Xue J Q, Hou Y, Ge Y J, Huang Z M, Chu J H
    Optical characteristics of PMNT thin films in visible and mid-infrared regions
    Journal of Infrared and Millimeter Waves, 2007, 26: 405-408.

    | 标签: 传感器

    Journal Article

    Lin T, Sun J L, Meng X J, Ma J H, Shi F W, Zhang X D, Wang L, Chen J, Chu J H
    Ferroelectric film thickness dependence of properties of infrared detector with an SiO2 aerogel thermal insulation layer
    Journal of Infrared and Millimeter Waves, 2007, 26: 329.

    | 标签: 传感器

    Journal Article

    Lin T, Sun J L, Meng X J, Ma J H, Shi F W, Chen J, Chu J H
    The influence of dead layers on the voltage response of ferroelectric film infrared detectors
    Integrated Ferroelectrics, 2007, 91: 97-102.

    | 标签: 传感器

    Journal Article

    Li Y W, Xue J Q, Sun J L, Meng X J, Huang Z M, Chu J H, Ding L H, Zhang W F
    Infrared optical properties of BiFeO3 thin films prepared by chemical solution deposition
    Applied Physics a-Materials Science & Processing, 2007, 87: 125-128.

    | 标签: 传感器

    Journal Article

    Li Y W, Hu Z G, Yue F Y, Yang G Y, Shi W Z, Meng X J, Sun J L, Chu J H
    Properties of highly (100) oriented Pb(Mg1∕3,Nb2∕3)O3–PbTiO3 films on LaNiO3 bottom electrodes
    Applied Physics Letters, 2007, 91: 232912.

    | 标签: 传感器

    Journal Article

    Hu Z G, Li Y W, Yue F Y, Zhu Z Q, Chu J H
    Temperature dependence of optical band gap in ferroelectric Bi3.25La0.75Ti3O12 films determined by ultraviolet transmittance measurements
    Applied Physics Letters, 2007, 91: 221903.

    | 标签: 传感器

    Journal Article

    Hu G J, Hong X K, Chu J H, Dai N
    Ferroelectric and optical properties of quasiperiodic PbZr0.5Ti0.5O3 multilayers grown on quartz wafers
    Applied Physics Letters, 2007, 90: 162902.

    | 标签: 传感器

    Journal Article

    Hu G J, Hong X K, Chen J, Chu J H, Dai N
    Formation mechanism of periodical ferroelectric multilayers with high optical reflectivity
    Journal of Infrared and Millimeter Waves, 2007, 26: 89-91.

    | 标签: 传感器

    Journal Article

    Hong X K, Hu G J, Shang J L, Bao J, Chu J H, Dai N
    Ba0.9Sr0.1TiO3-based optical microcavities fabricated by chemical solution deposition
    Applied Physics Letters, 2007, 90: 251911.

    | 标签: 传感器

    Journal Article

    Hong X K, Hu G J, Chen J, Chu J H, Dai N
    Structural and electric properties of sol-gel-derived Ba0.9Sr0.1TiO3 multilayers
    Journal of the American Ceramic Society, 2007, 90: 1280-1282.

    | 标签: 传感器

    Journal Article

    Han K, Shen B, Tang N, Tang Y Q, He X W, Qin Z X, Yang Z J, Zhang G, Lin T, Zhu B, Zhou W Z, Chu J H
    Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in AlxGa1-xN/GaN heterostructures
    Physics Letters A, 2007, 366: 267-270.

    | 标签: 传感器

    Journal Article

    Gao Y H, Shen H, Ma J H, Xue J Q, Sun J L, Meng X J, Chu J H, Wang P N
    Surface chemical composition and optical properties of nitrogen-doped Ba0.6Sr0.4TiO3 thin films
    Journal of Applied Physics, 2007, 102: 064106.

    | 标签: 传感器

    Journal Article

    Chu J H, Meng X J
    Study on the ferroelectric thin films tor uncooled infrared detection
    Ferroelectrics, 2007, 352: 260-272.

    | 标签: 传感器

    Conference

    Wu, X.; Miura, K.; Nakamae, K.
    Methodology for Layout-Based Diagnosis of VLSI Chips Considering Temperature Distribution Conference 
    Institute of Electronics,Information and Communication Engineers (IEICE), 2007.

    BibTeX 标签: 芯片设计


    @conference{nokey,
    title = {Methodology for Layout-Based Diagnosis of VLSI Chips Considering Temperature Distribution},
    author = {X. Wu and K. Miura and K. Nakamae},
    year  = {2007},
    date = {2007-09-10},
    urldate = {2007-09-10},
    booktitle = { Institute of Electronics,Information and Communication Engineers  (IEICE)},
    keywords = {芯片设计},
    pubstate = {published},
    tppubtype = {conference}
    }


  • 2006

    Journal Article

    Zhu B, Gui Y S, Zhou W Z, Shang L Y, Qiu Z J, Guo S L, Zhang F J, Chu J H
    Magnetoresistance oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor
    Acta Physica Sinica, 2006, 55: 2955-2960.

    | 标签: 传感器

    Journal Article

    Zhu B, Gui Y S, Zhou W Z, Shang L Y, Guo S L, Chu J H, Lu J, Tang N, Shen B, Zhang F J
    The weak anti localization and localization phenomenon in AlGaN/GaN two-dimensional electron gas
    Acta Physica Sinica, 2006, 55: 2498-2503.

    | 标签: 传感器

    Journal Article

    Zhu B, Gui Y S, Qiu Z J, Zhou W Z, Yao W, Guo S L, Chu J H, Jia Z F
    Beating oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor
    Acta Physica Sinica, 2006, 55: 786-790.

    | 标签: 传感器

    Journal Article

    Zhou W Z, Yao W, Zhu B, Qiu Z J, Guo S L, Lin T, Cui L J, Gui Y S, Chu J H
    Magneto-transport characteristics of two-dimensional electron gas for Si delta-doped InAlAs/InGaAs single quantum well
    Acta Physica Sinica, 2006, 55: 2044-2048.

    | 标签: 传感器

    Journal Article

    Zhang X D, Meng X J, Sun J L, Wang G S, Lin T, Chu J H
    Low-temperature preparation of Pb(ZrxTi1-x)O-3 thin film
    Integrated Ferroelectrics, 2006, 81: 123-128.

    | 标签: 传感器

    Journal Article

    Zhang X D, Meng X J, Sun J L, Wang G S, Lin T, Chu J H
    Investigation of room temperature electrical resistivities of LaNiO3-delta thin films deposited by rf magnetron sputtering and high oxygen-pressure processing
    Journal of Vacuum Science & Technology A, 2006, 24: 914-918.

    | 标签: 传感器

    Journal Article

    Yue F-y, Shao J, Lv X, Huang W, Chu J H
    Modulated FTIR photoluminescence spectra study on narrow-gap HgCdTe liquid phase epitaxial films
    proceedings of the Joint 31st International Conference on Infrared and Millimeter Waves/14th International Conference on Terahertz Electronics, Shanghai, PEOPLES R CHINA, F Sep 18-22, 2006, 2006.

    | 标签: 传感器

    Journal Article

    Yue F Y, Shao J, Lu X, Huang W, Chu J H, Wu J, Lin X C, He L
    Anomalous temperature dependence of absorption edge in narrow-gap HgCdTe semiconductors
    Applied Physics Letters, 2006, 89: 021912.

    | 标签: 传感器

    Journal Article

    Xue J Q, Huang Z M, Liu A Y, Hou Y, Meng X J, Chu J H
    Optical properties of 92%Pb(Mg1/3Nb2/3)O-3-8%PbTiO3 thin films prepared by chemical solution deposition
    Journal of Applied Physics, 2006, 100: 104107.

    | 标签: 传感器

    Journal Article

    Wu Y N, Huang Z M, Chen Y W, Chu J H
    Measurement of polarization mode dispersion in fiber using wavelength scanning method
    Journal of Infrared and Millimeter Waves, 2006, 25: 64-66.

    | 标签: 传感器

    Journal Article

    Tang N, Shen B, Wang M J, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H
    Effective mass of the two-dimensional electron gas and band nonparabolicity in AlxGa1-xN/GaN heterostructures
    Applied Physics Letters, 2006, 88: 172115.

    | 标签: 传感器

    Journal Article

    Tang N, Shen B, Wang M J, Yang Z J, Xu K, Zhang G Y, Gui Y S, Zhu B, Guo S L, Chu J H, Hoshino K, Arakawa Y
    Influence of the magnetic field on the effective mass of the two-dimensional electron gas in AlxGa1-x/GaN heterostructures
    Physica Status Solidi C - Current Topics in Solid State Physics, 2006, 3: 2246-2249.

    | 标签: 传感器

    Journal Article

    Tang N, Shen B, Wang M J, Han K, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Chu J H
    Beating patterns in the oscillatory magnetoresistance originated from zero-field spin splitting in AlxGa1-xN/GaN heterostructures
    Applied Physics Letters, 2006, 88: 172112.

    | 标签: 传感器

    Journal Article

    Tang N, Shen B, Wang M, Yang Z, Xu K, Zhang G, Gui Y, Zhu B, Guo S, Chu J H
    Influence of Al composition on transport properties of two-dimensional electron gas in AlxGa1-xAs/GaN heterostructures
    Chinese Journal of Semiconductors, 2006, 27: 235-238.

    | 标签: 传感器

    Journal Article

    Tang N, Shen B, Han K, Yang Z J, Xu K, Zhang G Y, Lin T, Zhu B, Zhou W Z, Shang L Y, Guo S L, Chu J H
    Origin of split peaks in the oscillatory magnetoresistance in AlxGa1-xN/GaN heterostructures
    Journal of Applied Physics, 2006, 100: 073704.

    | 标签: 传感器

    Journal Article

    Sun J L, Li Y W, Li T X, Lin T, Chen J, Meng X J, Chu J H
    Electrical transport properties of BiFeO3 thin film
    Journal of Infrared and Millimeter Waves, 2006, 25: 401-404.

    | 标签: 传感器

    Journal Article

    Sun J L, Li Y W, Li T X, Lin T, Chen J, Meng X J, Chu J H
    The leakage current in BiFeO3 films derived by chemical solution deposition
    Ferroelectrics, 2006, 345: 83-89.

    | 标签: 传感器

    Journal Article

    Shi F W, Meng X J, Wang G S, Sun J L, Lin T, Ma J H, Li Y W, Chu J H
    The third-order optical nonlinearity of Bi3.25La0.75Ti3O12 ferroelectric thin film on quartz
    Thin Solid Films, 2006, 496: 333-335.

    | 标签: 传感器

    Journal Article

    Shao J, Yue F Y, Lu X, Lu W, Huang W, Li Z F, Guo S L, Chu J H
    Photomodulated infrared spectroscopy by a step-scan Fourier transform infrared spectrometer
    Applied Physics Letters, 2006, 89: 182121.

    | 标签: 传感器

    Journal Article

    Shao J, Lu X, Yue F Y, Huang W, Guo S L, Chu J H
    Magnetophotoluminescence study of GaxIn1-xP quantum wells with CuPt-type long-range ordering
    Journal of Applied Physics, 2006, 100: 053522.

    | 标签: 传感器

    Journal Article

    Shao J, Lu W, Lu X, Yue F Y, Li Z F, Guo S L, Chu J H
    Modulated photoluminescence spectroscopy with a step-scan Fourier transform infrared spectrometer
    Review of Scientific Instruments, 2006, 77: 063104.

    | 标签: 传感器

    Journal Article

    Wang G S, Zhao Q, Meng X J, Shi F W, Sun J L, Chu J H
    The Fatigue Properties of LaNiO3/PbZr0.4Ti0.6O3/LaNiO3 Heterostructures
    Piezoelectrics and Acoustooptics, 2006, 28: 72-75.

    | 标签: 传感器

    Journal Article

    Ma S H, Li S H, Wang W C, Wang G S, Sun J L, Meng X J, Chu J H
    Pyroelectric figure of merit in alternating hemicyanine/NC Langmuir-Blodgett films incorporating barium ions
    Colloids and Surfaces a-Physicochemical and Engineering Aspects, 2006, 284: 74-77.

    | 标签: 传感器

    Conference

    Ma J H, Xue J Q, Meng X J, Sun J L, Lin T, Shi F W, Chu J H
    Infrared optical properties of Bi4-xNdyTi3O12 thin films prepared by a chemical solution method
    proceedings of the Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, Shanghai, China, F, 2006.

    | 标签: 传感器

    Journal Article

    Ma J H, Huang Z M, Meng X J, Liu S J, Zhang X D, Sun J L, Xue J Q, Chu J H, Li J
    Optical properties of SrTiO3 thin films deposited by radio-frequency magnetron sputtering at various substrate temperatures
    Journal of Applied Physics, 2006, 99: 033515.

    | 标签: 传感器

    Journal Article

    Lu X, Chu J H
    Lattice thermal conductivity in a silicon nanowire with square cross section
    Journal of Applied Physics, 2006, 100: 014305.

    | 标签: 传感器

    Journal Article

    Lu A Y, Meng X J, Xue J Q, Sun J L, Ma J H, Wang L, Chu J H
    Optical properties of Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films prepared by chemical solution deposition
    Acta Physica Sinica, 2006, 55: 3128-3131.

    | 标签: 传感器

    Journal Article

    Liu A Y, Meng X J, Sun J L, Xue J Q, Ma J H, Wang L, Chu J H
    Study on the electrical and optical properties of Pb(Mg1/3Nb2/3) O-3-PbTiO3 thin films deposited by a chemical solution method
    Journal of Crystal Growth, 2006, 290: 127-130.

    | 标签: 传感器

    Journal Article

    Li S H, Ma S H, Li B, Sun J L, Wang G S, Meng X J, Chu J H, Wang W C
    Enhancement of ferroelectricity in Langmuir-Blodgett multilayer films of weak-polar organic molecules
    Colloids and Surfaces a-Physicochemical and Engineering Aspects, 2006, 284: 419-423.

    | 标签: 传感器

    Journal Article

    Huang Z M, Xue J Q, Liu S J, Hou Y, Chu J H, Zhang D H
    Bound electrical charges in BaTiO3 ferroelectric thin films: Evidence for spontaneous polarization
    Physical Review B, 2006, 73: 212104.

    | 标签: 传感器

    Journal Article

    Huang Z M, Xue J Q, Hou Y, Chu J H, Zhang D H
    Optical magnetic response from parallel plate metamaterials
    Physical Review B, 2006, 74: 193105.

    | 标签: 传感器

    Journal Article

    Huang Z M, Xue J Q, Ge Y J, Qin J H, Hou Y, Chu J H, Zhang D H
    Temperature dependence of BaTiO3 infrared dielectric properties
    Applied Physics Letters, 2006, 88: 212902.

    | 标签: 传感器

    Journal Article

    Hu G J, Hong X K, Sun J L, Chen J, Chu J H, Zhu D M, Dai N
    Peculiar ferroelectric and dielectric properties of quasiperiodic PbZr0.4Ti0.6O3 multilayers
    New Journal of Physics, 2006, 8: 316.

    | 标签: 传感器

    Journal Article

    Hu G J, Hong X K, Liu A Y, Chen J, Chu J H, Dai N
    PbZr0.4Ti0.6O3-based reflectors with tunable peak wavelengths
    Journal of the American Ceramic Society, 2006, 89: 1453-1454.

    | 标签: 传感器

    Journal Article

    Hong X K, Hu G J, Chen J, Chu J H, Dai N, Wu H Z
    Ba0.9Sr0.1TiO3-based Bragg reflectors fabricated from one single chemical solution
    Applied Physics Letters, 2006, 89: 082902.

    | 标签: 传感器

    Journal Article

    Cui L J, Zeng Y P, Wang B Q, Zhu Z P, Guo S L, Chu J H
    Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates
    Journal of Applied Physics, 2006, 100: 033705.

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  • 2005

    Journal Article

    Zheng Z W, Shen B, Qiu Z J, Gui Y S, Tang N, Liu J, Chen D J, Zhang R, Shi Y, Zheng Y D, Guo S L, Chu J H, Hoshino K, Arakawa Y
    Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
    Applied Physics a-Materials Science & Processing, 2005, 80: 39-42.

    | 标签: 传感器

    Journal Article

    Zhao Q, Huang Z M, Hu Z G, Chu J H
    A study on the thermostability of LaNiO3 films
    Surface & Coatings Technology, 2005, 192: 336-340.

    | 标签: 传感器

    Journal Article

    Zhang X D, Meng X J, Sun J L, Lin T, Chu J H
    Low-temperature preparation of highly (100)-oriented Pb(ZrxTi1-x)O-3 thin film by high oxygen-pressure processing
    Applied Physics Letters, 2005, 86: 252902.

    | 标签: 传感器

    Journal Article

    Yao W, Qiu Z J, Gui Y S, Zheng Z W, Lu J, Tang N, Shen B, Chu J H
    Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure
    Acta Physica Sinica, 2005, 54: 2247-2251.

    | 标签: 传感器

    Journal Article

    Yang P X, Meng X J, Huang Z M, Chu J H
    Ferroelectric polaron in layered perovskite ferroelectric thin films
    Journal of Infrared and Millimeter Waves, 2005, 24: 1-6.

    | 标签: 传感器

    Journal Article

    Yang P X, Guo M, Shi M R, Meng X J, Huang Z M, Chu J H
    Spectroscopic ellipsometry of SrBi2Ta2-xNbxO9 ferroelectric thin films
    Journal of Applied Physics, 2005, 97: 106106.

    | 标签: 传感器

    Journal Article

    Wang G S, Zhao Q, Meng X J, Chu J H, Remiens D
    Preparation of highly (100)-oriented LaNiO3 nanocrystalline films by metalorganic chemical liquid deposition
    Journal of Crystal Growth, 2005, 277: 450-456.

    | 标签: 传感器

    Journal Article

    Sun J L, Meng X J, Ma J H, Lin T, Chen J, Dai N, Chu J H
    Retention characteristics of Au/Bi3.25La0.75Ti3O12/Si metal-ferro-electric-semiconductor structure
    Applied Physics a-Materials Science & Processing, 2005, 81: 389-392.

    | 标签: 传感器

    Journal Article

    Shi F-w, Meng X-j, Wang G-s, Lin T, Li Y-w, Ma J-h, Sun J-l, Chu J H
    Effect of Mn doping on the electrical properties of PbZr0.5Ti0.5O3 ferroelectric thin film
    Journal of Functional Materials and Devices, 2005, 11: 211-214.

    | 标签: 传感器

    Journal Article

    Shi F W, Meng X J, Wang G S, Lin T, Ma J H, Li Y W, Chu J H
    The third-order optical nonlinearity of The pyrochlore phase 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) thin film on quartz
    Physica B-Condensed Matter, 2005, 370: 277-280.

    | 标签: 传感器

    Journal Article

    Ma J H, Sun J L, Meng X J, Lin T, Shi F W, Chu J H
    Dielectric and interface characteristics of SrTiO3 with a MIS structure
    Acta Physica Sinica, 2005, 54: 1390-1395.

    | 标签: 传感器

    Journal Article

    Ma J H, Meng X J, Sun J L, Lin T, Shi F W, Wang G S, Chu J H
    Effect of excess Pb on crystallinity and ferroelectnic properties of PZT(40/60) films on LaNiO3 coated Si substrates by MOD technique
    Applied Surface Science, 2005, 240: 275-279.

    | 标签: 传感器

    Journal Article

    Ma J H, Meng X J, Sun J L, Lin T, Shi F W, Chu J H
    Optical properties of SrTiO3 thin films prepared by metalorganic decomposition
    Chinese Physics, 2005, 14: 610-614.

    | 标签: 传感器

    Journal Article

    Ma J H, Meng X J, Sun J L, Lin T, Shi F W, Chu J H
    Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr0.4Ti0.6)O-3 thin films on LaNiO3 coated Si substrates
    Materials Research Bulletin, 2005, 40: 221-228.

    | 标签: 传感器

    Journal Article

    Ma J H, Meng X J, Sun J L, Hu Z G, Chu J H
    Optical properties of Bi3.25La0.75Ti3O12 and Bi3.25Nd0.75Ti3O12 thin films prepared by a chemical solution method
    Acta Physica Sinica, 2005, 54: 3900-3904.

    | 标签: 传感器

    Journal Article

    Ma J H, Meng X J, Sun J L, Chu J H
    Crystallinity and ferro electricity of MOD-derived Pb0.985La0.01(Zr0.4Ti0.6)O-3 thin films
    Journal of Inorganic Materials, 2005, 20: 163-168.

    | 标签: 传感器

    Journal Article

    Ma J H, Meng X J, Sun J L, Chu J H
    Anisotropic ferroelectric properties of MOD-derived Bi3.25Nd0.75Ti3O12 thin films
    Journal of Inorganic Materials, 2005, 20: 430-434.

    | 标签: 传感器

    Journal Article

    Ma J H, Meng X J, Lin T, Liu S J, Zhang X D, Sun J L, Chu J H
    Structural and electrical properties of SrTiO3 thin films as insulator of met al-ferro electric-insulator-semiconductor (MFIS) structures
    Chinese Physics, 2005, 14: 2352-2359.

    | 标签: 传感器

    Journal Article

    Ma J H, Meng X J, Lin T, Liu S J, Sun J L, Chu J H
    Leakage current mechanisms of SrTiO3 thin films with MIS structures
    Integrated Ferroelectrics, 2005, 74: 189-197.

    | 标签: 传感器

    Journal Article

    Liu S J, Chu J H
    Theoretical study of monolithic dielectric bolometer by thermal diffusion equation
    proceedings of the Infrared Components and Their Applications, Beijing, PEOPLES R CHINA, F Nov 08-11, 2004, 2005.

    | 标签: 传感器

    Journal Article

    Liu A Y, Meng X J, Xue J Q, Sun J L, Chen J, Chu J H
    Electrical and optical properties of Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films prepared by chemical solution deposition
    Applied Physics Letters, 2005, 87: 072903.

    | 标签: 传感器

    Journal Article

    Lin T, Sun J L, Shi F W, Hu Z G, Chen J, Chu J H
    The characteristic in infrared region of the TiO2 : Ti film
    Infrared Physics & Technology, 2005, 46: 257-261.

    | 标签: 传感器

    Journal Article

    Lin T, Meng X J, Sun J L, Ma J H, Chu J H
    Effect of LaNiO3 buffer layers on the structure and electrical properties of sol-gel-derived Pb(Mg1/3Nb2/3)O3PbTiO3 thin films
    Applied Physics a-Materials Science & Processing, 2005, 81: 1025-1028.

    | 标签: 传感器

    Journal Article

    Li Y W, Sun J L, Chen J, Meng X J, Chu J H
    Structural, ferroelectric, dielectric, and magnetic properties of BiFeO3/Pb(Zr-0.5,Ti-0.5)O-3 multilayer films derived by chemical solution deposition
    Applied Physics Letters, 2005, 87: 182902.

    | 标签: 传感器

    Journal Article

    Li Y W, Sun J L, Chen J, Meng X J, Chu J H
    Preparation and characterization of BiFeO3 thin films grown on LaNiO3-coated SrTiO3 substrate by chemical solution deposition
    Journal of Crystal Growth, 2005, 285: 595-599.

    | 标签: 传感器

    Journal Article

    Huang Z M, Chu J H, Wu Y N, Hou Y, Xue J Q, Tang D Y
    Static effective charges of BaTiO3: Infrared spectroscopic ellipsometry study
    Physical Review B, 2005, 72: 052106.

    | 标签: 传感器

    Journal Article

    Hu Z G, Shi F W, Huang Z M, Wu Y N, Wang G S, Chu J H
    Spectroscopic ellipsometry investigations of PLT ferroelectric thin films with various La concentrations in the mid-infrared spectral region
    Applied Physics a-Materials Science & Processing, 2005, 80: 841-846.

    | 标签: 传感器

    Journal Article

    Hu Z G, Huang Z M, Chu J H
    Optical characterizations of ferroelectric Bi3.25La0.75Ti3O12 thin films from NIR to UV regions using spectroscopic ellipsometry
    Trends in Semiconductor Research, 2005, 111-136.

    | 标签: 传感器

    Journal Article

    Hu G J, Chen J, An D L, Chu J H, Dai N
    Fabrication of ferroelectric PbZr0.4Ti0.6O3 multilayers by sol-gel process
    Applied Physics Letters, 2005, 86: 162905.

    | 标签: 传感器

    Journal Article

    Hou Y, Huang Z M, Xue J Q, Wu Y N, Shen X M, Chu J H
    Study of the ferroelectricity in Bi2Ti2O7 by infrared spectroscopic ellipsometry
    Applied Physics Letters, 2005, 86: 112905.

    | 标签: 传感器

    Journal Article

    Chu J H
    Application of optical absorption transition effects and the development of semiconductor photo-electronic detectors
    Wuli, 2005, 34: 840-847.

    | 标签: 传感器

  • 2004

    Journal Article

    Zheng Z W, Shen B, Gui Y S, Qiu Z J, Jiang C P, Tang N, Liu J, Chen D J, Zhou H M, Zhang R, Shi Y, Zheng Y D, Guo S L, Chu J H, Hoshino K, Arakawa Y
    Enhancement and anisotropy of the Landau g factor in modulation-doped Al0.22Ga0.78N/GaN heterostructures
    Journal of Applied Physics, 2004, 95: 2473-2476.

    | 标签: 传感器

    Journal Article

    Zheng Z W, Bo S, Gui Y S, Qiu Z J, Tang N, Jiang C P, Zhang R, Yi S, Zheng Y D, Guo S L, Chu J H
    Study on the subband properties of AlxGa1-x/GaN modulation-doped heterostructures
    Acta Physica Sinica, 2004, 53: 596-600.

    | 标签: 传感器

    Journal Article

    Zhao Q, Huang Z, Hu Z, Zhang X, Chu J H
    A Study on the Thermo-stability of LaNiO_3 Films
    Piezoelectrics and Acoustooptics, 2004, 26: 221-224.

    | 标签: 传感器

    Journal Article

    Zhao Q, Hu Z G, Huang Z M, Wang G S, Chu J H
    Study on the composition dependence of IR spectra on La-Ni-O thin films
    Journal of Infrared and Millimeter Waves, 2004, 23: 95-98.

    | 标签: 传感器

    Journal Article

    Yu J, Meng X J, Sun J L, Huang Z M, Chu J H
    Optical and electrical properties of highly (100)-oriented PbZr1-xTixO3 thin films on the LaNiO3 buffer layer
    Journal of Applied Physics, 2004, 96: 2792-2799.

    | 标签: 传感器

    Journal Article

    Wang G-s, Shi F-w, Sun J-l, Meng X-j, Dai N, Chu J H
    Effect of LaNiO3 buffer layer on properties of Pb(Zr,Ti)O3 thin films
    Journal of Functional Materials and Devices, 2004, 10: 294-298.

    | 标签: 传感器

    Journal Article

    Wang G S, Meng X J, Sun J L, Chu J H, Remiens D
    Ferroelectric properties of PbZr0.40Ti0.60O3/LaxSr1-xCoO3 heterostructures prepared by chemical solution routes
    Integrated Ferroelectrics, 2004, 64: 277-288.

    | 标签: 传感器

    Journal Article

    Wang G S, Hu Z G, Huang Z M, Yu J, Shi F W, Lin T, Ma J H, Zhao Q, Sun J L, Meng X J, Guo S L, Chu J H
    Infrared optical properties of PbZr0.4Ti0.6O3/La0.5Sr0.5CoO3 heterostructures on platinized silicon substrate
    Applied Physics a-Materials Science & Processing, 2004, 78: 119-123.

    | 标签: 传感器

    Journal Article

    Shu X Z, Wu Y R, Chen X S, Chu J H
    Finite difference time domain modeling of grating-coupled quantum well infrared photodetector
    Journal of Infrared and Millimeter Waves, 2004, 23: 401-404.

    | 标签: 传感器

    Conference

    Shi F W, Wang G S, Meng X J, Sun J L, Chu J H
    Heat-treating effect on the properties of Pb1-xLaxZr0.4Ti0.6)O-3 ferroelectric thin film prepared by a modified sol-gel process
    proceedings of the Fifth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F May 31-jun 02, 2004, 2004.

    | 标签: 传感器

    Journal Article

    Shi F W, Hu Z G, Wang G S, Lin T, Ma J H, Huang Z M, Meng X J, Sun J L, Chu J H
    Infrared optical properties of sol-gel Pb1-xLaxTiO3 ferroelectric thin films
    Thin Solid Films, 2004, 458: 223-226.

    | 标签: 传感器

    Journal Article

    Qiu Z J, Gui Y S, Zheng Z W, Tang N, Lu J, Shen B, Dai N, Chu J H
    Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructure
    Solid State Communications, 2004, 129: 187-190.

    | 标签: 传感器

    Journal Article

    Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H
    Spin-orbit and exchange interaction in a HgMnTe magnetic two-dimensional electron gas
    Acta Physica Sinica, 2004, 53: 1977-1980.

    | 标签: 传感器

    Journal Article

    Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H
    Giant Rashba spin splitting in HgTe/HgCdTe quantum wells
    Acta Physica Sinica, 2004, 53: 1186-1190.

    | 标签: 传感器

    Journal Article

    Qiu Z J, Gui Y S, Lin T, Lu J, Tang N, Shen B, Dai N, Chu J H
    Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements
    Solid State Communications, 2004, 131: 37-40.

    | 标签: 传感器

    Journal Article

    Qiu Z J, Gui Y S, Lin T, Dai N, Chu J H, Tang N, Lu J, Shen B
    Weak localization and magnetointersubband scattering effects in an AlxGa1-xN/GaN two-dimensional electron gas
    Physical Review B, 2004, 69: 125335.

    | 标签: 传感器

    Journal Article

    Qiu Z J, Gui Y S, Guo S L, Dai N, Chu J H, Zhang X X, Zeng Y P
    Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes
    Applied Physics Letters, 2004, 84: 1961-1963.

    | 标签: 传感器

    Journal Article

    Qiu Z J, Gui Y S, Cui L J, Zeng Y P, Huang Z M, Shu X Z, Dai N, Guo S L, Chu J H
    Magneto - Transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well
    Journal of Infrared and Millimeter Waves, 2004, 23: 329-332.

    | 标签: 传感器

    Journal Article

    Meng X J, Ma J H, Sun J L, Lin T, Yu J, Wang G S, Chu J H
    Effect of substitution of vanadium on the structure and electrical properties of Bi3.25La0.75Ti3O12 thin films
    Applied Physics a-Materials Science & Processing, 2004, 78: 1089-1091.

    | 标签: 传感器

    Journal Article

    Ma J H, Meng X J, Sun J L, Wang G S, Lin T, Shi F W, Chu J H
    Silica aerogel thin films prepared at ambient pressure
    Journal of Infrared and Millimeter Waves, 2004, 23: 465-468.

    | 标签: 传感器

    Journal Article

    Ma J H, Meng X J, Sun J L, Lin T, Shi F W, Chu J H
    Ferroelectric and optical properties of Bi3.25Nd0.75Ti3O12 thin films prepared by a chemical solution method
    Journal of Physics D-Applied Physics, 2004, 37: 3160-3164.

    | 标签: 传感器

    Journal Article

    Ma J H, Meng X J, Sun J L, Lin T, Chu J H
    Structure and ferroelectric properties of Bi3.25La0.75Ti3O12 and Bi3'.25Nd0.75Ti3O12 thin films prepared by a MOD method
    proceedings of the Fifth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F May 31-jun 02, 2004, 2004.

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    Journal Article

    Lu J, Shen B, Tang N, Chen D J, Zhao H, Liu D W, Zhang R, Shi Y, Zheng Y D, Qiu Z J, Gui Y S, Zhu B, Yao W, Chu J H, Hoshino K, Arakawa Y
    Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation
    Applied Physics Letters, 2004, 85: 3125-3127.

    | 标签: 传感器

    Journal Article

    Liu S H, Zeng X B, Chu J H
    Thermal-sensitive BST thin film capacitors for dielectric bolometer prepared by RF magnetron sputtering
    Microelectronics Journal, 2004, 35: 601-603.

    | 标签: 传感器

    Journal Article

    Liu A Y, Meng X J, Sun J L, Chu J H
    Study on the structure and ferroelectric properties of sol-gel derived Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films
    proceedings of the Fifth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F May 31-jun 02, 2004, 2004.

    | 标签: 传感器

    Journal Article

    Li Y W, Sun J L, Meng X J, Zhang W F, Chu J H
    Optical properties of BaTiO3 and Mn : BaTiO3 thin films deposited on fused quartz and silicon substrates using a sol-gel method
    proceedings of the Fifth International Conference on Thin Film Physics and Applications, Shanghai, PEOPLES R CHINA, F May 31-jun 02, 2004, 2004.

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    Journal Article

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    Li Y W, Sun J L, Meng X J, Chu J H, Zhang W F
    Structural and optical properties of Ba(Co-x,Ti1-x)O-3 thin films fabricated by sol-gel process
    Applied Physics Letters, 2004, 85: 1964-1966.

    | 标签: 传感器

    Journal Article

    Li X X, Lai Z Q, Wang G S, Sun J L, Zhao Q, Chu J H
    Influence of deposition power on the composition, structure and properties of PZT thin films prepared by RF sputtering
    Journal of Infrared and Millimeter Waves, 2004, 23: 313-316.

    | 标签: 传感器

    Journal Article

    Li S H, Mu J, Wang W J, Ma S H, Sun J L, Chu J H, Wang W C
    Polarization of hemicyanine Langmuir-Blodgett films
    Chinese Physics Letters, 2004, 21: 952-954.

    | 标签: 传感器

    Journal Article

    Li S H, Ma S H, Li B, Sun J L, Wang G S, Meng X J, Chu J H, Wang W C
    Thickness dependence of ferroelectricity in hemicyanine Langmuir-Blodgett multilayer films
    Acta Physico-Chimica Sinica, 2004, 20: 1253-1257.

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    Journal Article

    Jiang C P, Yang F H, Zheng H Z, Qiu Z J, Gui Y S, Guo S L, Chu J H, Shen B, Zheng Y D
    Magnetointersubband oscillations of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
    Chinese Physics Letters, 2004, 21: 915-918.

    | 标签: 传感器

    Journal Article

    Hu Z G, Wang S W, Huang Z M, Wu Y N, Lu W, Chu J H
    Infrared optical properties of Bi2Ti2O7 thin films prepared by chemical solution decomposition technique
    Journal of Infrared and Millimeter Waves, 2004, 23: 47-50.

    | 标签: 传感器

    Journal Article

    Hu Z G, Shi F W, Lin T, Huang Z M, Wang G S, Wu Y N, Chu J H
    Infrared spectroscopic ellipsometry of (Pb, La)(Zr, Ti)O-3 thin films on platinized silicon
    Physics Letters A, 2004, 320: 478-486.

    | 标签: 传感器

    Journal Article

    Hu Z G, Lai Z Q, Huang Z M, Wang G S, Shi F W, Chu J H
    Optical properties of PZT amorphous thin films prepared by RF magnetron sputtering
    Journal of Infrared and Millimeter Waves, 2004, 23: 181.

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    Journal Article

    Hu Z G, Huang Z M, Wu Y N, Zhao Q, Wang G S, Chu J H
    Ellipsometric characterization of LaNiO3-x films grown on Si(111) substrates: Effects of oxygen partial pressure
    Journal of Applied Physics, 2004, 95: 4036-4041.

    | 标签: 传感器

    Journal Article

    Hu Z G, Huang Z M, Wu Y N, Wang G S, Meng X J, Shi F W, Chu J H
    Spectroscopic-ellipsometry characterization of the interface layer of PbZr0.40Ti0.60O3/LaNiO3/Pt multilayer thin films
    Journal of Vacuum Science & Technology A, 2004, 22: 1152-1157.

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    Journal Article

    Hu Z G, Huang Z M, Wu Y N, Hu S H, Wang G S, Ma J H, Chu J H
    Optical characterization of ferroelectric Bi3.25La0.75Ti3O12 thin films
    European Physical Journal B, 2004, 38: 431-436.

    | 标签: 传感器

    Journal Article

    Hu S H, Meng X J, Hu G J, Chu J H, Dai N, Xu L, Liu L Y, Li D X
    Preparation and optical waveguide property of metal alkoxide solution-derived Pb(Zr0.5Ti0.5)O-3 thick films
    Applied Physics Letters, 2004, 84: 3609-3611.

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    Journal Article

    Hu S H, Hu G J, Meng X J, Wang G S, Sun J L, Guo S L, Chu J H, Dai N
    The grain size effec of the Pb(Zr0.45Ti0.55)O-3 thin films deposited on LaNiO3-coated silicon by modified sol-gel process
    Journal of Crystal Growth, 2004, 260: 109-114.

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    Journal Article

    Hu S H, Chen J, Hu Z G, Wang G S, Meng X J, Chu J H, Dai N
    The optical properties of Bi3.25La0.75Ti3O12 thin films with different thickness prepared by chemical solution deposition
    Materials Research Bulletin, 2004, 39: 1223-1229.

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    Journal Article

    Hu G J, Hu S H, Meng X J, Wang G S, Zhao Q, Sun J L, Chu J H, Dai N, Xu L, Liu L Y, Li D X
    Fabrication of ferroelectric PbZrxTi1-xO3 thick films and their optical waveguide properties
    Journal of Vacuum Science & Technology A, 2004, 22: 422-424.

    | 标签: 传感器

    Journal Article

    Hou Y, Lin T, Huang Z M, Wang G S, Hu Z G, Chu J H, Xu X H, Wang M
    Electrical and optical properties of Bi2Ti2O7 thin films prepared by metalorganic decomposition method
    Applied Physics Letters, 2004, 85: 1214-1216.

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    Journal Article

    Gui Y S, Becker C R, Dai N, Liu J, Qiu Z J, Novik E G, Schafer M, Shu X Z, Chu J H, Buhmann H, Molenkamp L W
    Giant spin-orbit splitting in a HgTe quantum well
    Physical Review B, 2004, 70: 115328.

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  • 2003

    Journal Article

    Zheng Z W, Shen B, Jiang C P, Gui Y S, Someya T, Zhang R, Shi Y, Zheng Y D, Guo S L, Chu J H, Arakawa Y
    Multisubband transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
    Journal of Applied Physics, 2003, 93: 1651-1655.

    | 标签: 传感器

    Journal Article

    Zheng Z W, Shen B, Jiang C P, Gui Y S, Someya T, Tang N, Zhang R, Shi Y, Zheng Y D, Guo S L, Chu J H, Arakawa Y
    Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
    Optical Materials, 2003, 23: 139-141.

    | 标签: 传感器

    Journal Article

    Zheng Z W, Shen B, Gui Y S, Jiang C P, Tang N, Zhang R, Shi Y, Zheng Y D, Guo S L, Zheng G Z, Chu J H, Someya T, Arakawa Y
    Transport properties of two-dimensional electron gas in different subbands in triangular quantum wells at AlxGa1-xN/GaN heterointerfaces
    Applied Physics Letters, 2003, 82: 1872-1874.

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    Journal Article

    Zhao Q, Lai Z-q, Huang Z-m, Chen J, Chu J H
    Optical and electric properties of rf-magnetron sputtered LaNiO3 thin film
    Journal of Functional Materials and Devices, 2003, 9: 71-74.

    | 标签: 传感器

    Journal Article

    Zhao Q, Chu J H
    The composition dependence of the rf-magnetron sputtered La-Ni-O films
    Journal of Functional Materials, 2003, 34: 687-689.

    | 标签: 传感器

    Journal Article

    Zhao Q, Chu J H
    Oxygen partial pressure dependence of the properties of sputtered LaNiO3 films
    Journal of Functional Materials and Devices, 2003, 9: 262-266.

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    Journal Article

    Zhang M S, Yu J, Chu J H, Chen Q, Chen W C
    Microstructures and photoluminescence of barium titanate nanocrystals synthesized by the hydrothermal process
    Journal of Materials Processing Technology, 2003, 137: 78-81.

    | 标签: 传感器

    Journal Article

    Yu J, Chu J H, Tang D Y
    Optical and Electrical Properties of Low-Dimensional Ferroelectric Materials and Device Physics of Ferroelectric Thin Film Infrared Focal Plane Arrays
    Journal of the Graduate School of the Academy of Sciences, 2003, 20: 254-259.

    | 标签: 传感器

    Journal Article

    Wang G S, Meng X J, Lai Z Q, Yu J, Sun J L, Guo S L, Chu J H
    Structural and optical properties of Bi3.25La0.75Ti3O12 ferroelectric thin films prepared by chemical solution methods
    Applied Physics a-Materials Science & Processing, 2003, 76: 83-86.

    | 标签: 传感器

    Journal Article

    Wang G S, Hu Z G, Shi F W, Meng X J, Sun J L, Zhao Q, Guo S L, Chu J H
    Structureal and optical properties of PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 multilayer thin films prepared by chemical solution routes
    Journal of Infrared and Millimeter Waves, 2003, 22: 23-26.

    | 标签: 传感器

    Journal Article

    Wang G, Lai Z, Li X, Meng X, Sun J, Zhao Q, Lin T, Chu J H, Hu J
    La-modified PbTiO3 Ferroelectric Thin Films Prepared by Sol-Gel Process
    Piezoelectrics and Acoustooptics, 2003, 25: 483-485,493.

    | 标签: 传感器

    Journal Article

    Wan Y B, Zhao Q, Guo X G, Chen J, Chu J H, Yoo S I
    Raman and FT-IR spectra of ferroelecdtric potassium lithium niobate crystal
    Journal of Infrared and Millimeter Waves, 2003, 22: 361-364.

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    Journal Article

    Tang N, Shen B, Zheng Z W, Liu J, Chen D J, Lu J, Zhang R, Shi Y, Zheng Y D, Gui Y S, Jiang C P, Qiu Z J, Guo S L, Chu J H, Hoshino K, Someya T, Arakawa Y
    Magnetoresistance oscillations induced by intersubband scattering of two-dimensional electron gas in Al0.22Ga0.78N/GaN heterostructures
    Journal of Applied Physics, 2003, 94: 5420-5422.

    | 标签: 传感器

    Journal Article

    Shen X Y, Ding G H, Chu J H, Huang Z M, Yao W, Zhou Y, Wei J Z, Chu L X, Zhang H M
    Comparison of infrared radiation spectrum of traditional moxibustion substitute moxibustion and acupoints of human body
    Journal of Infrared and Millimeter Waves, 2003, 22: 123-126.

    | 标签: 传感器

    Journal Article

    Shao J, Winterhoff R, Dornen A, Baars E, Chu J H
    Ordering effects on optical transitions in GaxIn1-xP/(Al0.66Ga0.34)(y)In1-yP quantum wells studied by photoluminescence and reflectivity spectroscopy
    Physical Review B, 2003, 68: 165327.

    | 标签: 传感器

    Journal Article

    Shao J, Dornen A, Baars E, Harle V, Scholz F, Guo S L, Chu J H
    Forbidden transitions and the effective masses of electrons and holes in In1-xGaxAs/InP quantum wells with compressive strain
    Journal of Applied Physics, 2003, 93: 951-956.

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    Journal Article

    Qiu Z J, Jiang C P, Gui Y S, Shu X Z, Guo S L, Chu J H, Cui L J, Zeng Y P, Zhu Z P, Wang B Q
    Electron transport properties of MM-HEMT with varied channel indium contents
    Acta Physica Sinica, 2003, 52: 2879-2882.

    | 标签: 传感器

    Journal Article

    Lu X, Chu J H, Shen W Z
    Modification of the lattice thermal conductivity in semiconductor rectangular nanowires
    Journal of Applied Physics, 2003, 93: 1219-1229.

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    Journal Article

    Li Y W, Meng X J, Yu J, Wang G S, Sun J L, Chu J H, Zhang W F
    Study on the preparation of LaNiO3 thin films using chemical solution decomposition method
    Journal of Infrared and Millimeter Waves, 2003, 22: 269-272.

    | 标签: 传感器

    Journal Article

    Li y, Zhang w, Meng x, Sun j, Wang g, Chu J H
    The study of the Pb(Zr_(0.3),Ti_(0.7))O_3 ferroelectric thin films with the LaNiO_3 thin films as the bottom electrode
    Journal of Henan University. Natural Science, 2003, 33: 23-26.

    | 标签: 传感器

    Journal Article

    Lai Z, Li Xin i, Yu J, Wang G, Guo S, Chu J H
    Effects on post-annealing temperature on the structure and properties of Pb(Zr_(0.52)Ti_(0.48)O_3 ferroelectric thin films prepared by rf sputtering
    Journal of Nanchang University, 2003, 27: 26-28,44.

    | 标签: 传感器

    Journal Article

    Hu Z G, Zhao Q, Huang Z M, Wang G S, Meng X J, Lin T, Chu J H
    Investigations on the infrared spectrometric ellipsometry of PbZr0.52Ti0.48O3 thin films
    Journal of Infrared and Millimeter Waves, 2003, 22: 59-62.

    | 标签: 传感器

    Journal Article

    Hu Z G, Wang S W, Huang Z M, Wang G S, Zhang Z H, Lu W, Chu J H
    Infrared optical properties of Bi2Ti2O7 thin films by spectroscopic ellipsometry
    Thin Solid Films, 2003, 440: 190-194.

    | 标签: 传感器

    Journal Article

    Hu Z G, Wang G S, Huang Z M, Meng X J, Zhao Q, Shi F W, Chu J H
    Investigations on the transmission spectra of PbZr0.40Ti0.60O3 amorphous thin films
    Journal of Infrared and Millimeter Waves, 2003, 22: 203-207.

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    Journal Article

    Hu Z G, Wang G S, Huang Z M, Meng X J, Shi F W, Chu J H
    Investigations of the optical properties of Ba0.9Sr0.1TiO3 ferroelectric thin films by spectroscopic ellipsometry
    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 2003, 42: 1400-1404.

    | 标签: 传感器

    Journal Article

    Hu Z G, Wang G S, Huang Z M, Meng X J, Shi F W, Chu J H
    Investigations on optical properties of very thin Bi3.25La0.75Ti3O12 ferroelectric thin films [J]
    Journal of Infrared and Millimeter Waves, 2003, 22: 256-260.

    | 标签: 传感器

    Journal Article

    Hu Z G, Wang G S, Huang Z M, Meng X J, Shi F W, Chu J H
    Investigations of the optical properties of Ba0.9Sr0.1TiO3 ferroelectric thin films by spectroscopic ellipsometry (vol 42, pg 1400, 2003)
    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 2003, 42: 5395-5395.

    | 标签: 传感器

    Journal Article

    Hu Z G, Wang G S, Huang Z M, Meng X J, Chu J H
    Investigations on the infrared optical properties of BaTiO3 ferroelectric thin films by spectroscopic ellipsometry
    Semiconductor Science and Technology, 2003, 18: 449-453.

    | 标签: 传感器

    Journal Article

    Hu Z G, Wang G S, Huang Z M, Chu J H
    Structure-related infrared optical properties of BaTiO3 thin films grown on Pt/Ti/SiO2/Si substrates
    Journal of Physics and Chemistry of Solids, 2003, 64: 2445-2450.

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    Journal Article

    Hu Z G, Wang G S, Huang Z M, Chu J H
    Optical properties of Bi3.25La0.75Ti3O12 thin films using spectroscopic ellipsometry
    Journal of Applied Physics, 2003, 93: 3811-3815.

    | 标签: 传感器

    Journal Article

    Hu Z G, Shi F W, Huang Z M, Wu Y N, Wang G S, Chu J H
    Infrared optical characterization of PLT thin films for applications in uncooled infrared detectors
    International Journal of Infrared and Millimeter Waves, 2003, 24: 1939-1954.

    | 标签: 传感器

    Journal Article

    Hu Z G, Shi F W, Huang Z M, Wang G S, Meng X J, Lin T, Chu J H
    Investigations of concentration effects of La on the infrared optical properties of PLZT thin films
    Acta Physica Sinica, 2003, 52: 1624-1629.

    | 标签: 传感器

    Journal Article

    Hu Z G, Meng X J, Huang Z M, Wang G S, Zhao Q, Chu J H
    Thickness dependence of infrared optical properties of LaNiO3 thin films prepared on platinized silicon substrates
    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 2003, 42: 7045-7049.

    | 标签: 传感器

    Journal Article

    Hu Z G, Ma J H, Huang Z M, Wu Y N, Wang G S, Chu J H
    Dielectric functions of ferroelectric Bi3.25La0.75Ti3O12 thin films on Si(100) substrates
    Applied Physics Letters, 2003, 83: 3686-3688.

    | 标签: 传感器

    Journal Article

    Hu Z G, Huang Z M, Lai Z Q, Wang G S, Chu J H
    Optical properties of amorphous PbZrxTi1-xO3 (x=0.52) thin films prepared by RF magnetron sputtering
    Thin Solid Films, 2003, 437: 223-229.

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  • 2002

    Journal Article

    Zhao Q, Fan Z X, Tang Z S, Meng X J, Song J L, Wang G S, Chu J H
    Highly (III)-oriented PbTiO3 films prepared by rf planar magnetron sputtering and their optical properties
    Surface & Coatings Technology, 2002, 160: 173-176.

    | 标签: 传感器

    Journal Article

    Zhao Q, Chu J H, Fan Z
    Study on Manufacturing Highly Oriented (111)PbTiO_3 Thin Film and its Optical Properties
    Plezoelectrics and Acoustooptics, 2002, 24: 382-384.

    | 标签: 传感器

    Conference

    Yu J, Meng X J, Sun J L, Wang G S, Chu J H
    Phase transformation and Raman spectra in BaTiO3 nanocrystals
    proceedings of the Symposium on Perovskite Materials held at the 2002 MRS Spring Meeting, San francisco, ca, F Apr 01-05, 2002, 2002.

    | 标签: 传感器

    Journal Article

    Xing H Z, Su G, Gao S, Chu J H
    Field-induced transition in the S=1 antiferromagnetic chain with single-ion anisotropy in a transverse magnetic field
    Physical Review B, 2002, 66: 054419.

    | 标签: 传感器

    Journal Article

    Wang G S, Yu J, Wang Q, Zhao Q, Sun J L, Meng X J, Guo S L, Chu J H
    Structure and optical properties of Ba0.9Sr0.1TiO3 ferroelectric thin films prepared by chemical solution routes
    Physica Status Solidi a-Applied Research, 2002, 194: 56-63.

    | 标签: 传感器

    Journal Article

    Wang G S, Meng X J, Lai Z Q, Yu J, Sun J L, Cheng J G, Tang J, Guo S L, Chu J H
    Structural and electrical properties of polycrystalline PbZr0.5Ti0.5O3 films deposited on La0.5Sr0.5CoO3 coated silicon by sol-gel process
    Applied Physics a-Materials Science & Processing, 2002, 74: 707-710.

    | 标签: 传感器

    Journal Article

    Wang G S, Lai Z Q, Yu J, Meng X J, Sun J L, Guo S L, Chu J H, Jin C Y, Li G, Lu Q H
    Structural and optical properties of Ba0.9Sr0.1TiO3 thin films prepared by chemical solution routes
    Journal of Infrared and Millimeter Waves, 2002, 21: 37-40.

    | 标签: 传感器

    Conference

    Wang G S, Hu Z G, Huang H M, Wang X G, Lin T, Chen J, Meng X J, Chu J H, Ieee I
    Infrared optical properties of lanthanum strontium cobalt thin films
    proceedings of the 27th International Conference on Infrared and Millimeter Waves, San diego, ca, F Sep 22-26, 2002, 2002.

    | 标签: 传感器

    Journal Article

    Wang G, Yu J, Lai Z, Meng X, Sun J, Guo S, Chu J H, Li G, Lu Q
    PZT50/50 ferroelectric thin films derived by modified sol-gel process
    Journal of Functional Materials, 2002, 33: 63-64.

    | 标签: 传感器

    Journal Article

    Wan Y-b, Wu Y-r, Chen J, Chu J H, Guo S-l, Li J
    Growth and defects of potassium lithium niobate crystals
    Journal of Synthetic Crystals, 2002, 31: 5-9.

    | 标签: 传感器

    Journal Article

    Tang J, Cheng J, Chu J H, Yu Q
    An Cooled (Ba,Sr)TiO_3 Thin Film Infrared Sensor Array Suitable for Thermal Imaging Applications
    Infrared Technology, 2002, 24: 18-21,33.

    | 标签: 传感器

    Journal Article

    Sun J L, Chen J, Meng X J, Yu J, Bo L X, Guo S L, Chu J H
    Evolution of Rayleigh constant in fatigued lead zirconate titanate capacitors
    Applied Physics Letters, 2002, 80: 3584-3586.

    | 标签: 传感器

    Journal Article

    Shao J, Dornen A, Baars E, Wang X G, Chu J H
    Photoluminescence and absorption identification of Ti3+ in zinc telluride
    Semiconductor Science and Technology, 2002, 17: 1213-1217.

    | 标签: 传感器

    Journal Article

    Meng X J, Sun J L, Wang X G, Lin T, Ma J H, Guo S L, Chu J H
    Temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors
    Applied Physics Letters, 2002, 81: 4035-4037.

    | 标签: 传感器

    Journal Article

    Lu X, Shen W Z, Chu J H
    Size effect on the thermal conductivity of nanowires
    Journal of Applied Physics, 2002, 91: 1542-1552.

    | 标签: 传感器

    Journal Article

    Lu X, Chu J H
    Phonon heat transport in silicon nanowires
    European Physical Journal B, 2002, 26: 375-378.

    | 标签: 传感器

    Conference

    Chu J H, Zhiming H
    Infrared spectroscopic ellipsometry study on ferroelectric thin films and narrow gap semiconductors
    Proceedings of the SPIE - The International Society for Optical Engineering, 2002, 4795: 44-51.

    | 标签: 传感器

    Journal Article

    Huang Z M, Yu R, Jiang C P, Lin T, Zhang Z H, Chu J H
    Influence of delta doping position on subband properties in In0.2Ga0.8As/GaAs heterostructures
    Physical Review B, 2002, 65: 205312.

    | 标签: 传感器

    Journal Article

    Huang Z M, Meng X J, Zhang Z H, Chu J H
    Infrared optical properties of PbTiO3 ferroelectric thin films
    Journal of Physics D-Applied Physics, 2002, 35: 246-248.

    | 标签: 传感器

    Journal Article

    Hu Z G, Wang G S, Huang Z M, Meng X J, Chu J H
    Infrared optical properties of Bi3.25La0.75Ti3O12 ferroelectric thin films using spectroscopic ellipsometry
    Journal of Physics D-Applied Physics, 2002, 35: 3221-3224.

    | 标签: 传感器

    Journal Article

    Hu Z G, Wang G S, Huang Z M, Chu J H
    Optical properties of PbTiO3 thin films prepared by a modified sol-gel processing
    Journal of Infrared and Millimeter Waves, 2002, 21: 175-179.

    | 标签: 传感器

    Journal Article

    Ding G-h, Shen X-y, Chu J H, Huang Z-m, Yao W, Liu H, Wang S-z, Fei L
    Research on infrared radiation spectrum of moxibustion and acupoints in human body in traditional Chinese medicine
    Chinese Journal of Biomedical Engineering, 2002, 21: 356-360.

    | 标签: 传感器

    Journal Article

    Ding G, Shen X, Chu J H, Huang Z, Yao W
    Observation on the Characters of the Infrared radiation Spectrum of Acupoints and Four Types of Moxibustion in the Human Body
    Acupuncture Research, 2002, 27: 269-273.

    | 标签: 传感器

    Journal Article

    Dai N, Chang Y, Wang X G, Li B, Chu J H
    Photo-electronic phenomena in narrow gap Hg1-xCdxTe
    Current Applied Physics, 2002, 2: 365-371.

    | 标签: 传感器

    Journal Article

    Cui L J, Zeng Y P, Wang B Q, Zhu Z P, Lin L Y, Jiang C P, Guo S L, Chu J H
    Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements
    Applied Physics Letters, 2002, 80: 3132-3134.

    | 标签: 传感器

    Conference

    Chu J H, Huang Z M
    Infrared spectroscopic ellipsometry on ferroelectric thin films and narrow gap semiconductors
    proceedings of the Conference on Materials for Infrared Detectors II, Seattle, wa FJul 08-09, 2002, 2002.

    | 标签: 传感器

    Conference

    Chu J H, Chang Y, Huang Z M, Gui Y S, Wang X G, Lu X, He L, Tang D Y
    Optical and electronic characterization on HgCdTe materials
    proceedings of the Materials for Infrared Detectors Ii, F, 2002.

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  • 2001

    Journal Article

    Zheng Z W, Shen B, Jiang C P, Zhang R, Shi Y, Zheng Y D, Zheng G Z, Guo S L, Chu J H
    Origin of the novel magnetoresistance oscillation of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
    Chinese Physics Letters, 2001, 18: 1641-1643.

    | 标签: 传感器

    Journal Article

    Yu J, Sun J L, Meng X J, Huang Z M, Chu J H, Tang D Y, Jin C Y, Li G, Li W Y, Liang Q
    Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt-Ti-SiO2-Si wafer
    Journal of Applied Physics, 2001, 90: 2699-2702.

    | 标签: 传感器

    Journal Article

    Yu J, Huang Z M, Meng X J, Sun J L, Chu J H, Tang D Y
    Infrared optical properties of LaNiO3-platinized silicon and PbZr chi Ti1-chi O3-LaNiO3-platinized silicon heterostructures
    Applied Physics Letters, 2001, 78: 793-795.

    | 标签: 传感器

    Journal Article

    Wang G S, Meng X J, Zheng W M, Wang X G, Yu J, Chu J H
    Study of properties of urea and L-alpha-alanine didoped triglycine sulfate(UrLATGS) crystals
    International Journal of Infrared and Millimeter Waves, 2001, 22: 329-334.

    | 标签: 传感器

    Journal Article

    Wang G S, Meng X J, Yu J, Sun J L, Lai Z Q, Guo S L, Chu J H
    Effect of hydrolysis on properties of PbZr0.50Ti0.50O3 ferroelectric thin films derived from a modified sol-gel process
    Journal of Crystal Growth, 2001, 233: 269-274.

    | 标签: 传感器

    Journal Article

    Wang G S, Meng X J, Sun J L, Lai Z Q, Yu J, Guo S L, Cheng J G, Tang J, Chu J H
    PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 heterostructures prepared by chemical solution routes on silicon with no fatigue polarization
    Applied Physics Letters, 2001, 79: 3476-3478.

    | 标签: 传感器

    Journal Article

    Wang G S, Lai Z Q, Yu J, Guo S L, Chu J H, Li G, Lu Q H
    Preparation and properties of lanthanum strontium cobalt films on Si(100) by metallorganic chemical liquid deposition
    Journal of Crystal Growth, 2001, 233: 512-516.

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    Conference

    Wang G S, Lai Z Q, Meng X J, Sun J L, Yu J, Guo S L, Chu J H
    PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/ thin films prepared on La/sub 0.5/Sr/sub 0.5/CoO/sub 3//LaNiO/sub 3/ heterostructures for integrated ferroelectric devices
    proceedings of the 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), F 22-25 Oct. 2001, 2001.

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    Journal Article

    Wang G S, Cheng J G, Meng X J, Yu J, Lai Z Q, Tang J, Guo S L, Chu J H, Li G, Lu Q H
    Properties of highly (100) oriented Ba0.9Sr0.1TiO3/LaNiO3 heterostructures prepared by chemical solution routes
    Applied Physics Letters, 2001, 78: 4172-4174.

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    Journal Article

    Wan Y B, Li J, Chu J H, Bo L X, Yu T Y, Yu B K
    The study of frequency-doubling properties of ferroelectric potassium lithium niobate
    Journal of Infrared and Millimeter Waves, 2001, 20: 147-150.

    | 标签: 传感器

    Journal Article

    Wan Y B, Li B, Chu J H
    Second harmonic generation of ferroelectric potassium lithium niobate crystals
    Integrated Ferroelectrics, 2001, 35: 1827-1833.

    | 标签: 传感器

    Journal Article

    Wan Y B, Chu J H, Yu T Y, Yu B K, Pan S K
    Growth and characterisation of ferroelectric potassium lithium niobate crystals
    Materials Science and Technology, 2001, 17: 1166-1168.

    | 标签: 传感器

    Journal Article

    Wan Y B, Chu J H, Guo S L, Bo L X, Yu T Y, Yu B K
    A ferroelectric frequency-doubling material-potassium lithium niobate
    International Journal of Infrared and Millimeter Waves, 2001, 22: 197-205.

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    Conference

    Wan Y, Guo Y, Yuan X, Chen J, Chu J H
    Spectra properties of ferroelectric potassium lithium niobate crystal
    proceedings of the 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), F 22-25 Oct. 2001, 2001.

    | 标签: 传感器

    Journal Article

    Meng X J, Sun J L, Yu J, Ye H J, Guo S L, Chu J H
    Preparation of highly (100)-oriented metallic LaNiO3 films on Si substrates by a modified metalorganic decomposition technique
    Applied Surface Science, 2001, 171: 68-70.

    | 标签: 传感器

    Journal Article

    Meng X J, Sun J L, Yu J, Wang G S, Guo S L, Chu J H
    Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode
    Applied Physics a-Materials Science & Processing, 2001, 73: 323-325.

    | 标签: 传感器

    Journal Article

    Meng X J, Sun J L, Yu J, Bo L X, Jiang C P, Sun Q, Guo S L, Chu J H
    Changes in the interface capacitance for fatigued lead-zirconate-titanate capacitors
    Applied Physics Letters, 2001, 78: 2548-2550.

    | 标签: 传感器

    Journal Article

    Mao W Y, Sun Q, Chu J H, Zhao J, Wang L M
    Electrically active defects in HgCdTe and opto-electronic properties of focal plane array by laser beam induced current
    Journal of Infrared and Millimeter Waves, 2001, 20: 259-262.

    | 标签: 传感器

    Journal Article

    Ma Z X, Meng X J, Chu J H
    Memory properties of metal-ferroelectric-semiconductor structure
    Ferroelectrics, 2001, 253: 795-801.

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    Journal Article

    Lu X, Gu J H, Chu J H
    Thermal conductivity of metallic wires
    Chinese Physics, 2001, 10: 223-228.

    | 标签: 传感器

    Journal Article

    Lu X, Chu J H
    Size effect on thermal conductivity of square wires
    Physica Status Solidi B-Basic Research, 2001, 226: 285-292.

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    Journal Article

    Lu X, Chu J H
    Roughness effect on thermal conductivity of thin films
    Physica Status Solidi B-Basic Research, 2001, 225: 35-41.

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    Journal Article

    Liang B L, Jiang C P, Xia G Q, Fan S P, Chu J H
    Investigation of long-wavelength optical-phonons in GaxIn1-xAsySb1-y quaternary mixed crystal by Raman scattering spectroscopies and FIR reflection spectra
    Journal of Infrared and Millimeter Waves, 2001, 20: 315-317.

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    Conference

    Jiang C P, Li X J, Guo S L, Sun Q, Huang Z M, Chu J H
    Transport properties of InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate
    proceedings of the 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), F 22-25 Oct. 2001, 2001.

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    Journal Article

    Jiang C P, Huang Z M, Li Z F, Yu J, Guo S L, Lu W, Chu J H, Cui L J, Zeng Y P, Zhu Z P, Wang B Q
    Longitudinal optic phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates
    Applied Physics Letters, 2001, 79: 1375-1377.

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    Journal Article

    Jiang C P, Huang Z M, Guo S L, Chu J H, Cui L J, Zeng Y P, Zhu Z P, Wang B Q
    Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates
    Applied Physics Letters, 2001, 79: 1909-1911.

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    Journal Article

    Jiang C P, Guo S L, Huang Z M, Yu J, Gui Y S, Zheng G Z, Chu J H, Zheng Z W, Shen B, Zheng Y D
    Subband electron properties of modulation-doped AlxGa1-xN/GaN heterostructures with different barrier thicknesses
    Applied Physics Letters, 2001, 79: 374-376.

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    Journal Article

    Huang Z M, Zang Z H, Jiang C P, Chu J H
    Refractive index enhancement effect in Hg1-xCdxTe near the fundamental gap
    Journal of Infrared and Millimeter Waves, 2001, 20: 161-164.

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    Journal Article

    Huang Z M, Jiang C P, Zhang Z H, Lin T, Chu J H, Yu R
    Subband characteristics of Si delta-doped pseudomorphic In0.2Ga0.8As/GaAs heterostructures
    Journal of Applied Physics, 2001, 90: 3115-3117.

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    Journal Article

    Huang Z M, Chu J H
    Refractive index dispersion of Hg1-xCdxTe by infrared spectroscopic ellipsometry
    Infrared Physics & Technology, 2001, 42: 77-80.

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    Journal Article

    Ding G H, Yao W, Chu J H, Shen X Y, Huang Z M, Cheng H S, Liu H, Wang S Z, Yang J, Wei H, Fei L
    Spectral characteristic of infrared radiations of some acupoint and non-acupoint areas in human arm surface
    Chinese Science Bulletin, 2001, 46: 678-682.

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    Journal Article

    Cheng J G, Tang J, Meng X J, Guo S L, Chu J H, Wang M, Wang H, Wang Z
    Fabrication and characterization of pyroelectric Ba0.8Sr0.2TiO3 thin films by a sol-gel process
    Journal of the American Ceramic Society, 2001, 84: 1421-1424.

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    Journal Article

    Cheng J G, Tang J, Guo S L, Chu J H
    Sol-gel derived pyroelectric barium strontium titanate thin films for infrared detector applications
    Ferroelectrics, 2001, 252: 525-532

    | 标签: 传感器

    Journal Article

    Cheng J G, Tang J, Guo S L, Chu J H
    Low-temperature fabrication of pyroelectric Ba0.8Sr0.2TiO3 thin films by a sol-gel process
    Journal of Materials Research, 2001, 16: 778-783.

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    Journal Article

    Chang Y, Tang W, Cheng C, Wang X, Chu J H, Tang D
    Realization and improvement of double modulation methods for Fourier transform luminescence measurements in middle and far infrared band
    Acta Optica Sinica, 2001, 21: 1489-1492.

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    Journal Article

    Cao X, Zeng Y P, Kong M Y, Pan L A, Wang B Q, Zhu Z P, Wang X G, Chang Y, Chu J H
    Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer
    Journal of Crystal Growth, 2001, 231: 520-524.

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  • 2000-1991

    Journal Article

    Zheng W M, Wang H, Wang S Y, Chu J H, Chen L Y
    The magneto-optical Kerr effect enhancement in Co2Ag98 granular films
    Journal of Infrared and Millimeter Waves, 2000, 19: 53-56.

    | 标签: 传感器

    Conference

    Zheng W M, Wang H, Wang S Y, Chen L Y, Chu J H
    The magneto-optical Kerr properties of Co-Ag annealed granular films
    proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.

    | 标签: 传感器

    Journal Article

    Zheng W M, Chen L Y, Chu J H, Deng Z B
    Magneto-optical Kerr effect in CoxAg1-x nanostructured granular films
    Science in China Series a-Mathematics Physics Astronomy, 2000, 43: 753-759.

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    Journal Article

    Yu J, Sun J L, Chu J H, Tang D Y
    Light-emission properties in nanocrystalline BaTiO3
    Applied Physics Letters, 2000, 77: 2807-2809.

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    Conference

    Yu J, Ling Y N, Sun J L, Meng X J, Chu J H, Tang D Y
    Theoretical study of monolithic pyroelectric sensor arrays by thermal diffusion equation
    proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.

    | 标签: 传感器

    Journal Article

    Wang X G, Chang Y, Gui Y S, Chu J H, Cao X, Zeng Y P, Kong M Y
    Photoluminescence studies on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells
    Journal of Infrared and Millimeter Waves, 2000, 19: 333-337.

    | 标签: 传感器

    Conference

    Wang X G, Chang Y, Cao X, Gui Y S, Chu J H
    Optical investigations on pseudomorphic: delta-doped AlGaAs/InGaAs/GaAs quantum wells
    proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.

    | 标签: 传感器

    Journal Article

    Wan Y-b, Chu J H, Huang F-p, Yu T-y, Yu B-k, Pan S-k
    Second harmonic generation of nonlinear optic crystal potassium lithium niobate
    Chinese Journal of Luminescence, 2000, 21: 129-133.

    | 标签: 传感器

    Conference

    Wan Y B, Chu J H, Guo S L, Bo L X
    A ferroelectric frequency-doubling material-potassium lithium niobate
    proceedings of the 25th International Conference on Infrared and Millimeter Waves, Beijing, peoples r china, F Sep 12-15, 2000, 2000.

    | 标签: 传感器

    Conference

    Sun J L, Meng X J, Bo L X, Ma Z X, Huang Z M, Guo S L, Chu J H
    The effect of PbO-coated layer on the microstructure and electrical properties of sol-gel derived PZT thin films
    proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.

    | 标签: 传感器

    Conference

    Meng X J, Sun J L, Wang G S, Yu J, Guo S L, Chu J H
    Low temperature preparation of highly (001)-oriented PZT thin films on Pt/Ti/SiO2/Si using LaNiO3 as a buffer layer
    proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.

    | 标签: 传感器

    Journal Article

    Meng X J, Ma Z X, Sun J L, Bo L X, Ye H J, Guo S L, Chu J H
    Highly oriented PbZr0.3Ti0.7O3 thin film on LaNiO3-coated Si substrate derived from a chemical solution technique
    Thin Solid Films, 2000, 372: 271-275.

    | 标签: 传感器

    Journal Article

    Meng X J, Cheng J G, Ye H J, Chu J H
    Characterization of the crystallization behaviors in the PbTiO3 thin films on Si substrates by an infrared spectroscopy technique
    Infrared Physics & Technology, 2000, 41: 47-50.

    | 标签: 传感器

    Journal Article

    Meng X J, Cheng J G, Yang P X, Ye H J, Chu J H
    IR spectroscopy of PbTiO3 thin films obtained from different annealing methods
    Acta Physica Sinica, 2000, 49: 371-374.

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    Journal Article

    Meng X J, Cheng J G, Sun J L, Ye H J, Guo S L, Chu J H
    Growth of (100)-oriented LaNiO3 thin films directly on Si substrates by a simple metalorganic decomposition technique for the highly oriented PZT thin films
    Journal of Crystal Growth, 2000, 220: 100-104.

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    Journal Article

    Meng X J, Cheng J G, Sun J L, Tan J, Ye H J, Chu J H
    Dependence of texture development on thickness of single-annealed-layer in sol-gel derived PZT thin films
    Thin Solid Films, 2000, 368: 22-25.

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    Journal Article

    Meng X J, Cheng J G, Li B, Tang J, Ye H J, Guo S L, Chu J H
    Characterization of phase transformations in PZT thin films prepared by a modified sol-gel technique
    Acta Physica Sinica, 2000, 49: 811-815.

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    Journal Article

    Meng X J, Cheng J G, Li B, Tang J, Ye H J, Chu J H
    PZT thin films derived from a modified sol-gel technique based on acetic acid/water system using a new zirconium source
    Journal of Materials Science Letters, 2000, 19: 1967-1969.

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    Journal Article

    Meng X J, Cheng J G, Li B, Guo S L, Ye H J, Chu J H
    Low-temperature preparation of highly (111) oriented PZT thin films by a modified sol-gel technique
    Journal of Crystal Growth, 2000, 208: 541-545.

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    Journal Article

    Ma Z X, Liao X B, Kong G L, Chu J H
    Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix (Retracted article. See vol. 120, pg. 299, 2014)
    Materials Letters, 2000, 42: 367-370.

    | 标签: 传感器

    Journal Article

    Ma Z X, Liao X B, Kong G L, Chu J H
    Raman scattering of nanocrystalline silicon embedded in SiO2
    Science in China Series a-Mathematics Physics Astronomy, 2000, 43: 414-420.

    | 标签: 传感器

    Journal Article

    Ma Z X, Liao X B, Kong G L, Chu J H
    Microstructure of SiOx : H films prepared by plasma enhanced chemical vapor deposition
    Chinese Physics, 2000, 9: 309-312.

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    Conference

    Liu X T, Liu Z H, Chang Y, Chu J H
    The fabrication of multi-element arrays based on high T-c superconducting microbolometers
    proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.

    | 标签: 传感器

    Journal Article

    Liang B L, Xia G Q, Huang Z M, Fan S P, Chu J H
    Determining the band gap of GaxIn1-xAsySb1-y quaternary alloy by infrared ellipsometric spectroscopy
    Journal of Infrared and Millimeter Waves, 2000, 19: 188-190.

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    Journal Article

    Li B, Koch F, Meng X J, Cheng J G, Chu J H
    Investigation of interface and bulk fatigue scenarios in sol-gel derived Pb(Zr0.5Ti0.5)O-3 films by asymmetric field driving
    Applied Physics Letters, 2000, 77: 898-900.

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    Journal Article

    Jiang C P, Gui Y S, Zheng G Z, Ma Z X, Wang S L, He L, Chu J H
    Investigation of the light hole in p-type Hg1-xCdxTe
    Acta Physica Sinica, 2000, 49: 959-964.

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    Journal Article

    Jiang C P, Gui Y S, Zheng G Z, Ma Z X, Li B, Guo S L, Chu J H
    Study on transport properties of two-dimensional electron gases in n-Hg0.80Mg0.20Te interface accumulation layer
    Acta Physica Sinica, 2000, 49: 1804-1808.

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    Journal Article

    Huang Z M, Zhang Z H, Jiang C P, Yu J A, Sun J L, Chu J H
    Infrared optical properties of Ba0.8Sr0.2TiO3 ferroelectric thin films
    Applied Physics Letters, 2000, 77: 3651-3653.

    | 标签: 传感器

    Journal Article

    Huang Z M, Meng X J, Yang P X, Zhang Z H, Chu J H
    Optical properties of PbZrxTi1-xO3 on platinized silicon by infrared spectroscopic ellipsometry
    Applied Physics Letters, 2000, 76: 3980-3982.

    | 标签: 传感器

    Conference

    Huang Z M, Jiang C P, Yang P X, Zhang Z H, Chu J H
    Infrared optical properties of PbZrxTi1-xO3 thin films
    proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.

    | 标签: 传感器

    Journal Article

    Huang Z, Chu J H
    Optimizing precision of fixed-polarizer, rotating-polarizer, sample, and fixed-analyzer spectroscopic ellipsometry
    Appl Opt, 2000, 39: 6390-6395.

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    Conference

    He L, Wu Y, Wang S L, Yu M F, Chen L, Qiao Y M, Yang J R, Fang W Z, Li Y J, Zhang Q Y, Ding R J, Chu J H
    MBE growth of HgCdTe and device applications
    proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.

    | 标签: 传感器

    Journal Article

    Gui Y S, Hu C M, Chen Z H, Zheng G Z, Guo S L, Chu J H, Chen J X, Li A Z
    Spin splitting in pseudomorphic InxGa1-xAs/InyAl1-yAs graded heterostructures
    Physical Review B, 2000, 61: 7237-7240.

    | 标签: 传感器

    Journal Article

    Gui Y S, Guo S L, Zheng G Z, Chu J H, Fang X H, Qiu K, Wang X W
    Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor
    Applied Physics Letters, 2000, 76: 1309-1311.

    | 标签: 传感器

    Conference

    GenShui W, Xiangjian M, Weiming Z, Xiaoguang W, Jian Y, Chu J H
    Study on properties of urea and L-/spl alpha/-alanine didoped triglycine sulfate (UrLATGS) crystals
    proceedings of the 25th International Conference on Infrared and Millimeter Waves (Cat. No.00EX442), F 12-15 Sept. 2000, 2000.

    | 标签: 传感器

    Conference

    Fu R L, Chu J H, Zheng W M, Guo G Y, Sun X
    Photo-induced polarization inversion of excitons in conjugated polymer films
    proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F May 08-11, 2000, 2000.

    | 标签: 传感器

    Journal Article

    Cheng J G, Tang J, Zhang A J, Meng X J, Chu J H
    Sol-gel-derived pyroelectric barium strontium titanate thin films for infrared detector applications
    Applied Physics a-Materials Science & Processing, 2000, 71: 667-670.

    | 标签: 传感器

    Conference

    Cheng J G, Tang J, Guo S L, Chu J H
    Effects of annealing temperature and time on the structure and ferroelectricity of sol-gel derived Ba0.8Sr0.2TiO3 thin films from high dilute precursor solutions
    proceedings of the Fourth International Conference on Thin Film Physics and Applications, F, 2000.

    | 标签: 传感器

    Journal Article

    Cheng J G, Tang J, Chu J H, Zhang A J
    Pyroelectric properties in sol-gel derived barium strontium titanate thin films using a highly diluted precursor solution
    Applied Physics Letters, 2000, 77: 1035-1037.

    | 标签: 传感器

    Journal Article

    Cheng J G, Meng X J, Tang J, Guo S L, Chu J H, Wang M, Wang H, Wang Z
    Effects of individual layer thickness on the structure and electrical properties of sol-gel-derived Ba0.8Sr0.2TiO3 thin films
    Journal of the American Ceramic Society, 2000, 83: 2616-2618.

    | 标签: 传感器

    Journal Article

    Cheng J G, Meng X J, Tang J, Guo S L, Chu J H
    Structure and ferroelectricity of Ba0.8Sr0.2TiO3 thin films prepared by a modified sol-gel processing
    Acta Physica Sinica, 2000, 49: 1006-1009.

    | 标签: 传感器

    Journal Article

    Cheng J G, Meng X J, Tang J, Guo S L, Chu J H
    Fabrication and electrical properties of sol-gel-derived Ba0.8Sr0.2TiO3 ferroelectric films from a 0.05-M spin-on solution
    Applied Physics a-Materials Science & Processing, 2000, 70: 411-414.

    | 标签: 传感器

    Journal Article

    Chang Y, Wang X G, Tang W G, Chu J H
    Infrared photoluminescence from narrow gap Hg0.79CD0.21Te
    Journal of Infrared and Millimeter Waves, 2000, 19: 174-176.

    | 标签: 传感器

    Conference

    Chang Y, Chu J H, Ji R B, Wang X G, Huang G S, Li J F, He L, Tang D Y
    Infrared photoluminescence characterization of HgCdTe film
    proceedings of the Fourth International Conference on Thin Film Physics and Applications, Shanghai, China, F May 08-11, 2000, 2000.

    | 标签: 传感器

    Journal Article

    Zhu J Q, Zhang X P, Li B, Chu J H
    The effects of Te precipitation on IR transmittance and crystalline quality of as-grown CdZnTe crystals
    Infrared Physics & Technology, 1999, 40: 411-415.

    | 标签: 传感器

    Journal Article

    Zheng W M, Chen L Y, Chu J H
    The magneto-optical Kerr effect enhancement in CoxAg1-x granular films
    Physica Status Solidi B-Basic Research, 1999, 214: 463-469.

    | 标签: 传感器

    Journal Article

    Zhang X H, Hu Y S, Wu J, Cheng Z Q, Xia G Q, Xu Y S, Chen Z H, Gui Y S, Chu J H
    Influence of deep levels on the performance of AlGaInP/GaAs heterojunction bipolar transistor
    Acta Physica Sinica, 1999, 48: 556-560.

    | 标签: 传感器

    Journal Article

    Yang P X, Huang Z M, Chu J H
    Energy gap and infrared adsorption of layer-structure perovskite ferroelectric thin films
    Journal of Infrared and Millimeter Waves, 1999, 18: 248-252.

    | 标签: 传感器

    Conference

    Meng X J, Huang Z M, Ye H J, Cheng J G, Yang P X, Chu J H
    Optical properties of sol-gel derived PbTiO3 and PbZr1-xTixO3 ferroelectric thin films
    proceedings of the Ferroelectric Thin Films Vii, Boston, ma, F Nov 30-dec 03, 1998, 1999 [C].

    | 标签: 传感器

    Journal Article

    Meng X J, Chneg J G, Ye H J, Yang P X, Guo S L, Chu J H
    Infrared reflection spectra and phonon modes of PbTiO3 polycrystalline thin film
    Journal of Infrared and Millimeter Waves, 1999, 18: 392-396.

    | 标签: 传感器

    Journal Article

    Ma Z X, Liao X B, Kong G L, Chu J H
    Optical properties of nanocrystalline silicon embedded in SiO2
    Science in China Series a-Mathematics Physics Astronomy, 1999, 42: 995-1002.

    | 标签: 传感器

    Journal Article

    Ma Z X, Liao X B, Kong G L, Chu J H
    Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix
    Applied Physics Letters, 1999, 75: 1857-1859.

    | 标签: 传感器

    Journal Article

    Ma Z X, Liao X B, Kong G L, Chu J H
    Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix
    Applied Physics Letters, 1999, 75: 1857-1859.

    | 标签: 传感器

    Journal Article

    Liu X T, Shi B A, Liu X H, Chu J H, Yang D J
    The fabrication of a 1 X 8 linear array high T-c superconductive infrared detector
    Infrared Physics & Technology, 1999, 40: 83-85.

    | 标签: 传感器

    Journal Article

    Jiang H, Xu X H, Sun X, Fu R L, Chu J H

    Transformation of photoexcitation in polymers under an electric field
    Acta Physica Sinica, 1999, 48: 2327-2333.

    | 标签: 传感器

    Journal Article

    Huang Z M, Yang P X, Chang Y, Chu J H
    Infrared optical properties of SrBi2Ta2O9 ferroelectric thin films
    Journal of Applied Physics, 1999, 86: 1771-1773.

    | 标签: 传感器

    Journal Article

    Huang Z M, Ji H M, Chen M H, Shi G L, Chen S W, Chen L Y, Chu J H
    Study on the refractive index of GaAs bulk material by infrared spectroscopic ellipsometry
    Journal of Infrared and Millimeter Waves, 1999, 18: 23-25.

    | 标签: 传感器

    Journal Article

    He L, Wang S L, Yang J R, Yu M F, Wu Y, Chen X Q, Fang W Z, Qiao Y M, Gui Y S, Chu J H
    Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe
    Journal of Crystal Growth, 1999, 201: 524-529.

    | 标签: 传感器

    Journal Article

    Gui Y S, Zheng G Z, Guo S L, Chu J H, Tang D Y, Chen J X, Li A Z
    Spin splitting in pseudomorphic InGaAs/InAlAs graded heterostructures as B -> 0
    Acta Physica Sinica, 1999, 48: 121-126.

    | 标签: 传感器

    Journal Article

    Gui Y S, Zheng G Z, Guo S L, Cai Y, Chu J H, Tang D Y
    The electrical parameter analysis for Hg1-xCdxTe photoconductors
    Journal of Infrared and Millimeter Waves, 1999, 18: 317-321.

    | 标签: 传感器

    Journal Article

    Fu R L, Chu J H, Jiang H, Sun X
    Field-induced luminescence quenching in electroluminescent conjugated polymers
    Chinese Physics Letters, 1999, 16: 764-766.

    | 标签: 传感器

    Journal Article

    Fu R L, Chu J H, Fu R T, Li L, Sun X
    Effects of electric field on the electronic structures in electroluminescent polymers
    Journal of Materials Science & Technology, 1999, 15: 354-356.

    | 标签: 传感器

    Journal Article

    Cheng J G, Meng X J, Tang J, Guo S L, Chu J H
    Pyroelectric Ba0.8Sr0.2TiO3 thin films derived from a 0.05 M solution precursor by sol-gel processing
    Applied Physics Letters, 1999, 75: 3402-3404.

    | 标签: 传感器

    Journal Article

    Cheng J G, Meng X J, Li B, Tang J, Guo S L, Chu J H, Wang M, Wang H, Wang Z
    Ferroelectricity in sol-gel derived Ba0.8Sr0.2TiO3 thin films using a highly diluted precursor solution
    Applied Physics Letters, 1999, 75: 2132-2134.

    | 标签: 传感器

    Conference

    Zhang X C, Zheng G Z, Guo S L, Gui Y S, Chu J H
    Interface electrical characteristics of passivation films on HgCdTe
    proceedings of the Third International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F Apr 15-17, 1997, 1998.

    | 标签: 传感器

    Journal Article

    Yang P X, Deng H M, Chu J H
    Highfield effects of layered perovskite ferroelectric thin films
    Science in China Series E-Technological Sciences, 1998, 41: 502-510.

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    Journal Article

    Liu X T, Lu H X, Liu X H, Li B, Chu J H
    Development of high T-c superconducting IR detectors with sub-micrometer structure
    Journal of Infrared and Millimeter Waves, 1998, 17: 381-385.

    | 标签: 传感器

    Journal Article

    Liu K, Chu J H, Johnston C, Roth S
    Measurement of electrical activation energy in boron-doped diamond using the flatband capacitance method
    Journal of Applied Physics, 1998, 83: 4202-4205.

    | 标签: 传感器

    Conference

    Li H, Yang J R, Wang S L, Yu M F, Wu Y, Qiao Y M, Chen X Q, Fang W H, Zhang Q Y, Gui Y S, Chu J H
    MBE HgCdTe for infrared focal plane arrays
    proceedings of the Detectors, Focal Plane Arrays, and Imaging Devices II, Beijing, peoples r china, F Sep 18-19, 1998, 1998.

    | 标签: 传感器

    Journal Article


    Li B O, Wu Y, Gui Y S, Ye H J, Chang Y, He L, Chu J H
    Spectra analysis of annealed Hg1-xCdxTe molecular beam epitaxial films (vol 73, pg 1376, 1998)
    Applied Physics Letters, 1998, 73: 2221-2221.

    | 标签: 传感器

    Journal Article

    Li B, Zhang X P, Zhu J Q, Chu J H
    Crystallinity improvement of Hg1-xCdxTe films grown by a liquid-phase epitaxial technique
    Journal of Crystal Growth, 1998, 184: 1242-1246.

    | 标签: 传感器

    Journal Article

    Li B, Wu Y, Gui Y S, Ye H J, Chang Y, He L, Chu J H
    Spectra analysis of annealed Hg1-xCdxTe molecular beam epitaxial films
    Applied Physics Letters, 1998, 73: 1376-1378.

    | 标签: 传感器

    Journal Article

    Li B, Gui Y S, Zhu J Q, Chu J H
    Structure investigation on Hg1-xCdxTe liquid phase epitaxial films grown by the meltetch technique
    Journal of Electronic Materials, 1998, 27: 51-54.

    | 标签: 传感器

    Conference

    Li B, Gui Y S, Zhu J Q, Chu J H
    Quality Hg1-xCdxTe films grown by the modified meltetch liquid phase epitaxy method
    proceedings of the Third International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F Apr 15-17, 1997, 1998.

    | 标签: 传感器

    Journal Article

    Li B, Gui Y S, Ye H J, Chu J H, Krishnamurthy S
    Logarithmic approximation for the energy band in nonparabolic semiconductors
    Journal of Applied Physics, 1998, 83: 7668-7671.

    | 标签: 传感器

    Journal Article

    Li B, Gui Y S, Ye H J, Chu J H
    Characterization of material inhomogeneities in Hg1-xCdxTe epilayer by infrared absorption spectra
    Physics Letters A, 1998, 243: 106-110.

    | 标签: 传感器

    Journal Article

    Li B, Gui Y S, Chen Z H, Ye H J, Chu J H, Wang S L, Ji R B, He L
    Study of impurity states in p-type Hg1-xCdxTe using far-infrared spectroscopy
    Applied Physics Letters, 1998, 73: 1538-1540.

    | 标签: 传感器

    Journal Article

    Huang Z M, Jin S R, Chen S W, Chen M H, Shi G L, Chen L Y, Chu J H
    Development of infrared spectroscopic ellipsometer by synchronous rotation of the polarizer and analyzer
    Journal of Infrared and Millimeter Waves, 1998, 17: 321-326.

    | 标签: 传感器

    Conference

    Gui Y S, Zheng G Z, Zhang X C, Guo S L, Chu J H, Cai Y
    The relationship between resistivity and temperature for Hg1-xCdxTe photoconductive detectors
    proceedings of the Third International Conference on Thin Film Physics and Applications, Shanghai, peoples r china, F Apr 15-17, 1997, 1998.

    | 标签: 传感器

    Journal Article

    Gui Y S, Zheng G Z, Guo S L, Chu J H
    Mobility spectrum analysis of multi-carrier system in HgCdTe
    Journal of Infrared and Millimeter Waves, 1998, 17: 327-332.

    | 标签: 传感器

    Journal Article

    Gui Y S, Zheng G Z, Cai Y, Chu J H.
    Quantitative mobility spectrum analysis of n-HgCdTe accumulated layers
    Journal of Infrared and Millimeter Waves, 1998, 17: 182-186.

    | 标签: 传感器

    Journal Article

    Gui Y S, Li B A, Zheng G Z, Chang Y, Wang S L, He L, Chu J H
    Evaluation of densities and mobilities for heavy and light holes in p-type Hg1-xCdx molecular beam epitaxy films from magnetic-field-dependent Hall data
    Journal of Applied Physics, 1998, 84: 4327-4331.

    | 标签: 传感器

    Journal Article

    Gui Y S, Li B, Zheng G Z, Guo S L, Chu J H, Oehling S, Becker C R, Landwehr G
    Transport properties of Hg0.80Mg0.20Te grown by molecular beam epitaxy
    Journal of Applied Physics, 1998, 84: 6170-6173.

    | 标签: 传感器

    Journal Article

    Fu L W, Liu K, Zhang B, Chu J H, Wang H, Wang M
    Capacitance-voltage characteristics of Bi4Ti3O12/p-Si interface
    Applied Physics Letters, 1998, 72: 1784-1786.

    | 标签: 传感器

    Journal Article

    Chu J H, Gui Y S, Li B O, Tang D Y
    Determination of cut-off wavelength and composition distribution in Hg1-xCdxTe
    Journal of Electronic Materials, 1998, 27: 718-721.

    | 标签: 传感器

    Journal Article

    Cheng J G, Meng X J, Yang P X, Chu J H
    Preparation and characterization of Pt/MgO/Si multilayer thin films
    Journal of Crystal Growth, 1998, 194: 89-93.

    | 标签: 传感器

    Journal Article

    Zhu J Q, Chu J H, Zhang X P, Cheng J J
    Study of zinc inclusions/precipitates in CdZnTe crystals
    Journal of Crystal Growth, 1997, 171: 357-360.

    | 标签: 传感器

    Journal Article

    Zhu J Q, Chu J H, Li B, Chen X Q, Cao J Y, Cheng J J
    Crystalline perfection of Hg1-xCdxTe epilayers by the vertical dipping liquid-phase epitaxy
    Journal of Crystal Growth, 1997, 177: 61-66.

    | 标签: 传感器

    Journal Article

    Liu K, Zhang B, Wan M F, Chu J H, Johnston C, Roth S
    Measurement of electron affinity in boron-doped diamond from capacitance spectroscopy
    Applied Physics Letters, 1997, 70: 2891-2893.

    | 标签: 传感器

    Journal Article

    Liu K, Johnston C, Chu J H, Roth S, Zhang B, Wan M F
    Measurement of doping concentration in boron-doped diamond film from capacitance spectroscopy
    Journal of Applied Physics, 1997, 82: 286-290.

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    Journal Article

    Liu K, Chu J H, Zheng G Z, Guo S L, Tang D Y
    Magneto-transport properties of semiconductors from flatband magnetocapacitance spectroscopy
    Journal of Applied Physics, 1997, 81: 1250-1254.

    | 标签: 传感器

    Journal Article

    Liu K, Chu J H, Wu L J, Cai Y, Guo S L, Ou H J, Zheng G Z, Tang D Y
    Magnetic-field-inducer carrier freeze-out in narrow-gap semiconductors analysed by capacitance spectroscopy
    Semiconductor Science and Technology, 1997, 12: 406-408.

    | 标签: 传感器

    Journal Article

    Li B, Zhu J Q, Zhang X P, Chu J H
    Effect of annealing on near-stoichiometric and non-stoichiometric CdZnTe wafers
    Journal of Crystal Growth, 1997, 181: 204-209.

    | 标签: 传感器

    Journal Article

    Li B, Chu J H, Tang D Y
    Segregation coefficients in Te-rich Hg-Cd-Te systems
    Journal of Crystal Growth, 1997, 171: 311-313.

    | 标签: 传感器

    Journal Article

    Gui Y S, Zheng G Z, Chu J H, Guo S L, Zhang X C, Tang D Y, Cai Y
    Electrical characterization of subbands in the HgCdTe surface layer
    Journal of Applied Physics, 1997, 82: 5000-5004.

    | 标签: 传感器

    Conference

    Chu J H, Liu K, Chang Y, Liu P L, Li B, Guo S L, Chen M H, Tang D Y
    Recent progress in the study of characterization and properties of HgCdTe at the National Laboratory for Infrared Physics in China
    proceedings of the Material Science and Material Properties for Infrared Optoelectronics, Uzhgorod, Ukraine, F 26 August 1997, 1997. SPIE.

    | 标签: 传感器

    Journal Article

    Zhu J Q, Chu J H, Li B, Chen X Q, Cao J Y, Cheng J J
    Morphology improvement of the Hg1-xCdxTe liquid-phase epilayers by meltback step
    Physica Status Solidi a-Applied Research, 1996, 157: 83-91.

    | 标签: 传感器

    Journal Article

    Liu K, Chu J H, Wu L J, Ou H J, Tang D Y
    Potential model for the subband structures in the inversion layer of narrow-gap semiconductor heterostructures
    Journal of Applied Physics, 1996, 79: 3608-3610.

    | 标签: 传感器

    Journal Article

    Li B, Chu J H, Zhu J Q, Chen X Q, Cao J Y, Tang D Y
    Morphology investigation of Hg1-xCdxTe liquid phase epitaxial films
    Journal of Crystal Growth, 1996, 163: 348-352.

    | 标签: 传感器

    Journal Article

    Li B, Chu J H, Zhu J Q, Chen X Q, Cao J Y, Tang D Y
    Growth of Hg1-xCdxTe liquid phase epitaxial films on vicinal planes
    Journal of Crystal Growth, 1996, 169: 480-484.

    | 标签: 传感器

    Journal Article

    Li B, Chu J H, Ye H J, Guo S P, Jiang W, Tang D Y
    Direct observation of vibrational modes in Hg1-xCdxTe
    Applied Physics Letters, 1996, 68: 3272-3274.

    | 标签: 传感器

    Journal Article

    Li B, Chu J H, Chen Z H, Chang Y, Ji H M, Tang D Y
    Free-carrier absorption of Hg1-xCdxTe epitaxial films
    Journal of Applied Physics, 1996, 79: 7738-7742.

    | 标签: 传感器

    Journal Article

    Li B, Chu J H, Chang Y, Gui Y S, Tang D Y
    Optical absorption above the energy band gap in Hg1-xCdxTe
    Infrared Physics & Technology, 1996, 37: 525-531.

    | 标签: 传感器

    Journal Article

    Li B, Chen X Q, Chu J H, Cao J Y, Zhu J Q, Tang D Y
    Growth and characterization of liquid-phase epitaxial Hg1-xCdxTe films
    Thin Solid Films, 1996, 278: 1-5.

    | 标签: 传感器

    Journal Article

    Guo S P, Chang Y, Zhang J M, Shen X C, Chu J H, Yuan S X
    Effect of the post-As+-implantation thermal treatment on MBE HgCdTe optical properties
    Journal of Electronic Materials, 1996, 25: 761-764.

    | 标签: 传感器

    Journal Article

    Fu R L, Chu J H, Zhang G P, Ma Y S, Sun X, Lee K H, Park T Y
    Relaxation of excited states in C-60
    Communications in Theoretical Physics, 1996, 26: 23-28.

    | 标签: 传感器

    Journal Article

    Chu J H, Tang D Y
    Recent progress on HgCdTe at the national laboratory for infrared physics in China
    Journal of Electronic Materials, 1996, 25: 1176-1182.

    | 标签: 传感器

    Journal Article

    Chang Y, Chu J H, Tang W G, Shen W Z, Tang D Y
    Photoluminescence investigation on impurity behavior in Sb-doped HgCdTe
    Infrared Physics & Technology, 1996, 37: 747-751.

    | 标签: 传感器

    Journal Article

    Zhang G P, Mao Y S, Zong X F, Sun X, Lu J C, Lee K H, Park T Y, Fu R L, Chu J H
    Self-trapping process of exciton in C-60
    Chinese Physics Letters, 1995, 12: 665-668.

    | 标签: 传感器

    Conference

    Liu P L, Lu W, Lu X F, Gong H M, Hu X N, Mu Y M, Chu J H, Shen S C
    Investigation of impurity defect level in Hg1-xCdxTe alloys using infrared magneto-photoconductivity
    proceedings of the 7th International Conference on Narrow Gap Semiconductors, Santa fe, nm, F Jan 08-12, 1995, 1995.

    | 标签: 传感器

    Conference

    Liu K, Chu J H, Guo S L, Tang D Y
    Subband Landau levels from the magneto-capacitance spectroscopies
    proceedings of the 7th International Conference on Narrow Gap Semiconductors, Santa fe, nm, F Jan 08-12, 1995, 1995.

    | 标签: 传感器

    Journal Article

    Li B, Chu J H, Liu K, Tang D Y
    Study on the Composition Profile of a Hg1-Xcdxte Epitaxy Film by Infrared Transmission Spectroscopy
    Journal of Physics-Condensed Matter, 1995, 7: 29-35.

    | 标签: 传感器

    Journal Article

    Li B, Chu J H, Cheng X Q, Liu K, Chao J Y, Tang D Y
    Influence of Mercury Pressure on Liquidus Temperature and Composition of Liquid-Phase Epitaxial (Hg,Cd)Te
    Journal of Crystal Growth, 1995, 148: 41-48.

    | 标签: 传感器

    Journal Article

    Li B, Chu J H, Chen X Q, Cao J Y, Tang D Y
    Influence of the Liquid-Phase Epitaxial-Growth Conditions on Composition Profile for Hg1-Xcdxte Film
    Journal of Electronic Materials, 1995, 24: 975-981.

    | 标签: 传感器

    Conference

    Li B, Chu J H, Chen X Q, Cao J Y, Tang D Y
    Influence of mercury pressure on composition profile of LPE Hg1-xCdxTe film
    proceedings of the 7th International Conference on Narrow Gap Semiconductors, Santa fe, nm, F Jan 08-12, 1995, 1995.

    | 标签: 传感器

    Conference

    Gui Y S, Chu J H, Gui L M
    Effect of the distribution of photogenerated carrier on HgCdTe photoconductivity
    proceedings of the 7th International Conference on Narrow Gap Semiconductors, Santa fe, nm, F Jan 08-12, 1995, 1995.

    | 标签: 传感器

    Journal Article

    Chang Y, Chu J H, Tang W G, Shen W Z, Li Z Y, Tang D Y, Guo S P, Yuan S X
    Photoluminescence Study on Hg1-Xcdxte Thin-Film Implanted with as Ion
    Acta Physica Sinica-Overseas Edition, 1995, 4: 606-611.

    | 标签: 传感器

    Conference

    Chang Y, Chu J H, Tang W G, Guo S P, Tang D Y
    The study of mercury vacancies in Hg1-xCdxTe from capacitance and photoluminescence spectroscopy
    proceedings of the Narrow Gap Semiconductors 1995, Santa fe, nm, F Jan 08-12, 1995, 1995.

    | 标签: 传感器

    Journal Article

    Liu K, Chu J H, Tang D Y
    Composition and Temperature-Dependence of the Refractive-Index in Hg1-Xcdxte
    Journal of Applied Physics, 1994, 75: 4176-4179.

    | 标签: 传感器

    Journal Article

    Liu K, Chu J H, Ou H J, Tang D Y
    Hole Subband in P-Type Channel of Semiconductor Heterostructures
    Journal of Applied Physics, 1994, 76: 7998-8000.

    | 标签: 传感器

    Journal Article

    Liu K, Chu J H, Li B, Tang D Y
    Measurement of Composition in Hg1-Xcdxte Epilayers
    Applied Physics Letters, 1994, 64: 2818-2820.

    | 标签: 传感器

    Journal Article

    Chu J H, Sizmann R, Liu R, Nachev I, Koch F
    Electron Subband Structure of Hgcdte Metal-Insulator-Semiconductor Heterostructures
    Solid-State Electronics, 1994, 37: 1125-1128.

    | 标签: 传感器

    Journal Article

    Chu J H, Li B, Liu K, Tang D Y
    Empirical Rule of Intrinsic Absorption-Spectroscopy in Hg1-Xcdxte
    Journal of Applied Physics, 1994, 75: 1234-1235.

    | 标签: 传感器

    Journal Article

    Chu J H, Shen S C
    The Study of Far-Infrared Phonon-Spectra on Hg1-Xcdxte
    Semiconductor Science and Technology, 1993, 8: S86-S89.

    | 标签: 传感器

    Journal Article

    Chu J H, Shen S C
    The Study of Far-Infrared Phonon-Spectra on Hg1-Xcdxte
    Semiconductor Science and Technology, 1993, 8: S86-S89.

    | 标签: 传感器

    Journal Article

    Chu J H, Miao J, Shi Q, Liu K, Ji H
    Transverse uniformity of composition x for Hg1-xCdxTe
    Journal of Infrared and Millimeter Waves, 1992, 11: 411-414.

    | 标签: 传感器

    Journal Article

    Chu J H, Mi Z Y, Tang D Y
    Band-to-Band Optical-Absorption in Narrow-Gap Hg1-Xcdxte Semiconductors
    Journal of Applied Physics, 1992, 71: 3955-3961.

    | 标签: 传感器

    Journal Article

    Chu J H, Mi Z Y, Sizmann R, Koch F, Wollrab R, Ziegler J, Maier H
    Influence of Resonant Defect States on Subband Structures in Hg1-Xcdxte
    Journal of Vacuum Science & Technology B, 1992, 10: 1569-1573.

    | 标签: 传感器

    Journal Article

    Chu J H, Mi Z Y
    Sizmann R, Koch F. Subband structure in the electric quantum limit for Hg1-xCdxTe
    Phys Rev B Condens Matter, 1991, 44: 1717-1723.

    | 标签: 传感器

    Journal Article

    Chu J H, Mi Z G, Tang D Y
    Intrinsic Absorption-Spectroscopy and Related Physical Quantities of Narrow-Gap Semiconductors Hg1-Xcdxte
    Infrared Physics, 1991, 32: 195-211.

    | 标签: 传感器

    Journal Article

    Chu J H, Mi Z
    Surface electron subband structures of Hg1-xCdxTe
    Journal of Infrared and Millimeter Waves, 1991, 10: 427-442.

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  • 1990-1980

    Journal Article

    Chu J H, Sizmann R, Koch F, Ziegle J, Maier H
    Experimental study of inversion layer subband structure on HgCdTe
    Chinese Journal of Semiconductors, 1990, 11: 332-340.

    | 标签: 传感器

    Journal Article

    Chu J H, Sizmann R, Koch F
    Dispersion-Relation and Landau-Levels of Inversion Layer Subband on P-Hgcdte
    Science in China Series a-Mathematics Physics Astronomy, 1990, 33: 1192-1200.

    | 标签: 传感器

    Journal Article

    Shen X C, Chu J H
    Far Infrared Spectral Study of the Phonon States of the Mixed-Crystals Cdxhg1-Xte
    Chinese Physics, 1986, 6: 294-303.

    | 标签: 传感器

    Journal Article

    Chu J H, Qian D R, Tang D Y
    Burstein-Moss Effect in Hg1-Xcdxte
    Physica Scripta, 1986, T14: 37-41.

    | 标签: 传感器

    Journal Article

    Shen X-c, Chu J H
    Far-infrared reflection spectra and the multimode model for mixed crystal CdxHg1-xTe
    Acta Physica Sinica, 1985, 34: 56-64.

    | 标签: 传感器

    Journal Article

    Qian D R, Tang W G, Shen J, Chu J H, Zheng G Z
    Infrared-Absorption in in-Doped Degenerate Hg1-Xcdxte
    Solid State Communications, 1985, 56: 813-816.

    | 标签: 传感器

    Journal Article

    Chu J H, Xu S, Ji H, Zhang W, Cheng S, Jiang R
    Determination of composition of Hg1-xCdxTe with the method of infrared absorption
    Chinese Journal of Infrared Research, 1985, 4: 255-260.

    | 标签: 传感器

    Journal Article

    Chu J H
    Fermi level and Burstein-Moss effect of degenerate semiconductor Hg1-xCdxTe
    Chinese Journal of Infrared Research, 1985, 4: 39-45.

    | 标签: 传感器

    Journal Article

    Shen X-c, Chu J H
    Far infrared spectral study of the phonon states of the mixed crystals CdxHg1-xTe
    Acta Physica Sinica, 1984, 33: 729-737.

    | 标签: 传感器


    Journal Article

    Shen S C, Chu J H
    Low-Frequency Phonon-Spectra of Mixed-Crystal CdxHg1-xTe
    Solid State Communications, 1983, 48: 1017-1021.

    | 标签: 传感器


    Journal Article

    Chu J H, Xu S H, Tang D Y
    Energy-Gap Versus Alloy Composition and Temperature in Hg1-xCdxTe
    Applied Physics Letters, 1983, 43: 1064-1066.

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